CN201805141U - Uniform laser ray device based on high-power semi-conductor laser - Google Patents
Uniform laser ray device based on high-power semi-conductor laser Download PDFInfo
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- CN201805141U CN201805141U CN2010202602582U CN201020260258U CN201805141U CN 201805141 U CN201805141 U CN 201805141U CN 2010202602582 U CN2010202602582 U CN 2010202602582U CN 201020260258 U CN201020260258 U CN 201020260258U CN 201805141 U CN201805141 U CN 201805141U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000007493 shaping process Methods 0.000 claims abstract description 20
- 238000005057 refrigeration Methods 0.000 claims description 8
- 239000005350 fused silica glass Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000000265 homogenisation Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
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- 230000006698 induction Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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Abstract
The utility model relates to a uniform laser ray device based on a high-power semi-conductor laser, which comprises four parts such as the high-power semi-conductor laser, a shaping light path system, a driving power supply and a temperature controller, wherein the laser emits near infrared light with the wavelength about 808nm; the output power of the laser is larger than 2w; the shaping light path system comprises two parts such as an aspheric collimating lens and a chamfered edge cylindrical lens; the distance between the aspheric collimating lens used for collimating a divergent light beam of the semiconductor laser and the chamfered edge cylindrical lens is 45-65mm; the chamfered edge cylindrical lens used for light homogenization and beam expansion of the laser in the direction of a slow axis is formed by splicing two identical cylindrical lenses; and the direction of the cylindrical surface is in superposition with the direction of a fast axis, so that laser rays can be focused in different working distances, and the flexibility of application of the laser rays is improved. Through the utilization of the device, the uniform laser rays of 5mm multiplied by 2000mm can be generated in a position 2m away from the laser.
Description
Technical field
The utility model relates to a kind of even laser unit based on high power semiconductor lasers, belongs to the laser measuring technique field.
Background technology
In the laser measurement field, usually need elongated and uniform structured light (laser rays) irradiation object being measured, observe the displacement data of measurement structure light again by camera, obtain the three-dimensional information of object being measured surface undulation.Existing common laser rays generally is the semiconductor laser generation by single tube, the laser rays that this single tube semiconductor laser produces can work in the indoor static place preferably, but under the sunlight background out of doors, during irradiation dark object (particularly black object), laser rays will be submerged in the noise, can't measure.And many application scenarios, such as Road Detection, building three-dimensional measurement, coal pile volume measurement etc., its common feature is outdoor background complexity, the measuring object extinction is serious, a little less than the reflection, therefore pressed for powerful even laser rays product.Though on recent market, there has been a spot of high power laser line products to occur based on solid state laser, can be used for outdoor laser measurement, but there is big, shortcoming such as output stability is poor, bulky, power consumption is big, the life-span is short, luminous spectral coverage is bad influenced by ambient temperature in this high power laser line products based on solid state laser; The Chinese invention patent of based semiconductor laser " diffraction grid array external cavity semiconductor laser linear array and preparation method thereof " (application number: 200710056186.2), utility model patent " diffraction grid array external cavity semiconductor laser linear array " (application number: 200720094443.7), patent of invention " semiconductor laser linear array luminous correct device " (200710056302.0) is disclosed all to be the semiconductor laser linear array preparation method, a kind that belongs to high power semiconductor lasers, after the laser light path shaping, the Apparatus and method for of output laser rays does not have disclosed patent at present.
Summary of the invention
The utility model is at the described weak point of background technology, a kind of even laser unit based on high power semiconductor lasers is proposed, be used to realize the laser measurement of outdoor strong bias light occasion, dark object, compare with solid state laser, have that structure is small and exquisite, power output is big, characteristics such as low in energy consumption, stable, longevity, be used for substituting solid state laser and realize uniform laser rays output, satisfy market for the demand of high power laser line.
The technical solution of the utility model is: a kind of even laser unit based on high power semiconductor lasers, form by high power semiconductor lasers, shaping light path system, driving power, thermostat four parts, high power semiconductor lasers outgoing wavelength is near the near infrared light the 808nm, and power output is greater than 2w; The shaping light path system is made up of aspheric surface collimating lens and chamfered edge cylindrical mirror two parts, and the material of chamfered edge cylindrical mirror is K9 or fused silica glass; The output line of driving power part has 4 groups, is respectively laser power supply supply lines, semiconductor thermoelectric refrigeration device (TEC) supply lines, temperature sensor supply lines and fan supply lines; Thermostat is by semiconductor thermoelectric refrigeration device (TEC), temperature sensor, heat sink, fin and fan are formed, it is characterized in that: the shaping light path system is made up of aspheric surface collimating lens and chamfered edge cylindrical mirror two parts, being used to collimate the aspheric surface collimating lens of semiconductor laser divergent beams and distance that the chamfered edge cylindrical mirror draws back is 45～65mm, be used for the even light of laser slow-axis direction and expand the chamfered edge cylindrical mirror of restrainting being spliced into by two identical cylindrical mirrors, and its cylinder direction overlaps with the quick shaft direction of semiconductor laser, the aspheric surface collimating lens is installed in the screw thread lens barrel, its beneficial effect is, can enlarge the slow axial light spot size that shines on the cylindrical mirror, help collimating the divergent beams of semiconductor laser, help even light, by regulating the relative position of aspheric surface collimating lens in the screw thread lens barrel, laser rays can be focused on the different operating distance, improve the laser rays application flexibility.
Operation principle of the present utility model is: the light beam of the slow-axis direction after the cylindrical mirror of chamfered edge will collimate is divided into two, and at focal position realization inverted image, two light beams behind the inverted image are that the edge is strong, a little less than the centre, but more weak part is remedied in the middle of the light beam after the stack, thereby realize even laser rays, utilize this device, can be implemented in the even laser rays that distance lasers 2m place produces 5mm * 2000mm.
Description of drawings
Fig. 1 implements structural representation for the utility model;
Fig. 2 is a laser head A part enlarged drawing;
Fig. 3 is the cylindrical mirror B part enlarged drawing of chamfered edge;
Fig. 4 is the structural representation of shaping light path.
Embodiment
Mark in the accompanying drawing:
The 1-high power semiconductor lasers, 2-collimating lens, 3-shaping lens, 4-protective glass, 5-semiconductor thermoelectric refrigeration device; the 6-temperature sensor, 7-fin, 8-fan, 9-driving power, 10-cable; the 11-light distribution, 12-light beam A, 13-light beam B, 14-light beam C.
Embodiment is described further below in conjunction with the utility model:
As accompanying drawing 1; the utility model embodiment comprises high power semiconductor lasers 1; collimating lens 2; shaping lens 3; protective glass 4; semiconductor thermoelectric refrigeration device 5; temperature sensor 6; fin 7; fan 8; parts such as driving power 9; adopt high power semiconductor lasers 1 as light source; driving power 9 gives high power semiconductor lasers 1 power supply by cable 10; the output beam of high power semiconductor lasers 1 angle of divergence behind collimating lens 2 obtains certain compression; shaping lens 3 is made up of two identical chamfered edge cylindrical mirror splicings, and its cylinder direction overlaps with the quick shaft direction of semiconductor laser.
As accompanying drawing 2, be the index path of shaping light path slow-axis direction, shaping optical routing two parts are formed as can be seen, and a part is an aspheric surface collimating lens 2, is used to collimate the divergent beams of semiconductor laser 1.The characteristics of the light distribution 11 of the light beam behind the collimation are strong in the middle of being, a little less than the both sides, do not satisfy the evenly requirement of illumination, another part is a shaping lens 3, its effect is to realize even light and expand bundle, its principle is: the light beam of the slow-axis direction after shaping lens 3 will collimate is divided into two, and at focal position realization inverted image, it is strong that two light beam A (12) behind the inverted image and light beam B (13) are the edge, a little less than the centre, but after the stack, more weak part is remedied in the middle of the light beam C (14), thereby realize even light, wherein the distance drawn back of shaping lens 3 and aspheric surface collimating lens 2 is 60mm (can regulate between 45～65mm), shine slow axial light spot size on the shaping lens 3 with expansion, help even light.The distance of shaping lens 3 aspherical mirrors 2 and laser luminescence chip has determined the focal position of laser rays, therefore aspherical mirror 2 is installed in the screw thread lens barrel, by regulating the relative position of aspherical mirror 2 in the screw thread lens barrel, laser rays can be focused on the different operating distance, improve the laser rays application flexibility.
Because high power semiconductor lasers 1 can produce a large amount of heat energy when work, will influence the useful life of high power semiconductor lasers 1 even cause components from being damaged as untimely taking away, so considered attemperating unit in the system design.Attemperating unit is by the heat sink temperature of temperature sensor 6 induction high power semiconductor lasers 1, and feed back to driving power 9, driving power 9 provides suitable electric current for semiconductor thermoelectric refrigeration device 5 according to value of feedback, thereby guarantees that high power semiconductor lasers 1 works in rated temperature all the time.The heat that the hot junction of semiconductor thermoelectric refrigeration device 5 produces is taken away by fin 7 and fan 8.
Claims (1)
1. even laser unit based on high power semiconductor lasers, form by high power semiconductor lasers, shaping light path system, driving power, thermostat four parts, high power semiconductor lasers outgoing wavelength is near the near infrared light the 808nm, and power output is greater than 2w; The shaping light path system is made up of aspheric surface collimating lens and chamfered edge cylindrical mirror two parts, and the material of chamfered edge cylindrical mirror is K9 or fused silica glass; The output line of driving power part has 4 groups, is respectively laser power supply supply lines, semiconductor thermoelectric refrigeration device TEC supply lines, temperature sensor supply lines and fan supply lines; Thermostat is by semiconductor thermoelectric refrigeration device TEC, temperature sensor, heat sink, fin and fan are formed, it is characterized in that: the shaping light path system is made up of aspheric surface collimating lens and chamfered edge cylindrical mirror two parts, being used to collimate the aspheric surface collimating lens of semiconductor laser divergent beams and distance that the chamfered edge cylindrical mirror draws back is 45～65mm, be used for the even light of laser slow-axis direction and expand the chamfered edge cylindrical mirror of restrainting being spliced into by two identical cylindrical mirrors, and its cylinder direction overlaps with the quick shaft direction of semiconductor laser, and the aspheric surface collimating lens is installed in the screw thread lens barrel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202602582U CN201805141U (en) | 2010-07-15 | 2010-07-15 | Uniform laser ray device based on high-power semi-conductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202602582U CN201805141U (en) | 2010-07-15 | 2010-07-15 | Uniform laser ray device based on high-power semi-conductor laser |
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| Publication Number | Publication Date |
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| CN201805141U true CN201805141U (en) | 2011-04-20 |
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| CN2010202602582U Expired - Fee Related CN201805141U (en) | 2010-07-15 | 2010-07-15 | Uniform laser ray device based on high-power semi-conductor laser |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104518424A (en) * | 2015-01-12 | 2015-04-15 | 赵立华 | Package structure of high-power semiconductor laser |
| CN104836112A (en) * | 2015-04-17 | 2015-08-12 | 中国科学院苏州生物医学工程技术研究所 | Insulation and heat radiation device of single tube semiconductor laser cascade structure |
| WO2015124367A1 (en) * | 2014-02-18 | 2015-08-27 | Avl Emission Test Systems Gmbh | Device and method for determining the concentration of at least one gas in a sample gas flow by means of infrared absorption spectroscopy |
| CN105424649A (en) * | 2015-12-04 | 2016-03-23 | 北京大方科技有限责任公司 | Gas chamber structure, gas detection box and gas detection system |
| WO2017052721A1 (en) * | 2015-09-21 | 2017-03-30 | Intel Corporation | System for flat-top intensity laser sheet beam generation |
| CN106770021A (en) * | 2016-12-19 | 2017-05-31 | 北京遥测技术研究所 | A kind of reflective gas cell of spatial light for gaseous spectrum absorption detecting |
| CN106785876A (en) * | 2016-11-02 | 2017-05-31 | 北京信息科技大学 | A kind of laser frequency regulator based on semiconductor chilling plate |
| CN107843986A (en) * | 2017-11-01 | 2018-03-27 | 深圳新亮智能技术有限公司 | Manual variable optical systems and its method based on VCSEL laser diodes composition |
| WO2017184275A3 (en) * | 2016-04-19 | 2018-08-23 | Intel Corporation | Particulate matter measurement using light sheet generation and scattering analysis |
| CN108508625A (en) * | 2018-03-12 | 2018-09-07 | 广东欧珀移动通信有限公司 | Structured light projector, image acquisition device, and electronic apparatus |
| CN112260044A (en) * | 2020-10-23 | 2021-01-22 | 青岛镭创光电技术有限公司 | Laser device with uniform energy |
| CN113894437A (en) * | 2021-09-28 | 2022-01-07 | 无锡亮源激光技术有限公司 | Wafer splitting device |
-
2010
- 2010-07-15 CN CN2010202602582U patent/CN201805141U/en not_active Expired - Fee Related
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015124367A1 (en) * | 2014-02-18 | 2015-08-27 | Avl Emission Test Systems Gmbh | Device and method for determining the concentration of at least one gas in a sample gas flow by means of infrared absorption spectroscopy |
| CN104518424A (en) * | 2015-01-12 | 2015-04-15 | 赵立华 | Package structure of high-power semiconductor laser |
| CN104836112A (en) * | 2015-04-17 | 2015-08-12 | 中国科学院苏州生物医学工程技术研究所 | Insulation and heat radiation device of single tube semiconductor laser cascade structure |
| CN104836112B (en) * | 2015-04-17 | 2018-07-10 | 中国科学院苏州生物医学工程技术研究所 | A kind of insulation heat radiator of single-tube semiconductor laser cascaded structure |
| US9927620B2 (en) | 2015-09-21 | 2018-03-27 | Intel Corporation | System for flat-top intensity laser sheet beam generation |
| TWI697661B (en) * | 2015-09-21 | 2020-07-01 | 美商英特爾股份有限公司 | System for flat-top intensity laser sheet beam generation |
| WO2017052721A1 (en) * | 2015-09-21 | 2017-03-30 | Intel Corporation | System for flat-top intensity laser sheet beam generation |
| CN105424649B (en) * | 2015-12-04 | 2019-06-04 | 北京大方科技有限责任公司 | A kind of air chamber structure, gas detection case and gas detecting system |
| CN105424649A (en) * | 2015-12-04 | 2016-03-23 | 北京大方科技有限责任公司 | Gas chamber structure, gas detection box and gas detection system |
| WO2017184275A3 (en) * | 2016-04-19 | 2018-08-23 | Intel Corporation | Particulate matter measurement using light sheet generation and scattering analysis |
| US10670523B2 (en) | 2016-04-19 | 2020-06-02 | Intel Corporation | Particulate matter measurement using light sheet generation and scattering analysis |
| CN106785876A (en) * | 2016-11-02 | 2017-05-31 | 北京信息科技大学 | A kind of laser frequency regulator based on semiconductor chilling plate |
| CN106770021A (en) * | 2016-12-19 | 2017-05-31 | 北京遥测技术研究所 | A kind of reflective gas cell of spatial light for gaseous spectrum absorption detecting |
| CN107843986A (en) * | 2017-11-01 | 2018-03-27 | 深圳新亮智能技术有限公司 | Manual variable optical systems and its method based on VCSEL laser diodes composition |
| CN108508625A (en) * | 2018-03-12 | 2018-09-07 | 广东欧珀移动通信有限公司 | Structured light projector, image acquisition device, and electronic apparatus |
| CN112260044A (en) * | 2020-10-23 | 2021-01-22 | 青岛镭创光电技术有限公司 | Laser device with uniform energy |
| CN113894437A (en) * | 2021-09-28 | 2022-01-07 | 无锡亮源激光技术有限公司 | Wafer splitting device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110420 Termination date: 20180715 |
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| CF01 | Termination of patent right due to non-payment of annual fee |