CN201804902U - Electrode of high-power LED - Google Patents
Electrode of high-power LED Download PDFInfo
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- CN201804902U CN201804902U CN201020194100XU CN201020194100U CN201804902U CN 201804902 U CN201804902 U CN 201804902U CN 201020194100X U CN201020194100X U CN 201020194100XU CN 201020194100 U CN201020194100 U CN 201020194100U CN 201804902 U CN201804902 U CN 201804902U
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- 238000005452 bending Methods 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 238000005286 illumination Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000009827 uniform distribution Methods 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 13
- 238000007598 dipping method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The utility model relates to an electrode of a high-power LED, and belongs to the field of semi-conductor illumination. In the electrode structure, two electrodes are uniformly distributed on the epitaxial surface of the LED and parallel to each other, and adopt a curved curvilinear form on the surface of an epitaxial wafer. Therefore, the uniform distribution of electric current density between the electrodes are ensured; the phenomenon that the electric current density in the crossed part between two straight lines and the electric current density on a straight line are not uniformly distributed when the electrodes in the conventional electrode structure are distributed in a linear manner is eliminated; the uniformity of electric current densities in the whole LED is enhanced; and the uniformity of light emitted by the LED is guaranteed.
Description
Technical field
The utility model relates to field of semiconductor illumination, especially refers to a kind of electrode of power type light-emitting diode.
Background technology
The epitaxial wafer that present GaN base LED light-emitting diode adopts in actual production mainly is a Sapphire Substrate, because sapphire is an insulator, need etched features to the N district to form negative electrode, adopt the positive assembling structure LED light-emitting diode of this manufacturing process inevitably to have the extending transversely of electric current, thereby be easy to generate the building-up effect of electric current, cause LED light-emitting diode light efficiency to reduce, thermal losses strengthens, degradation problem under useful life, and the development that deepens constantly along with field of semiconductor illumination, luminous efficiency and heat dispersion to the power-type LED light-emitting diode chip for backlight unit have more and more higher requirement, and the power-type LED light-emitting diode chip for backlight unit is bigger owing to its size, and current gathering effect is more obvious.Thereby reasonably the electrode design of LED light-emitting diode helps the even expansion of electric current, improves the combined efficiency of charge carrier, increases the extraction of light, thereby improves luminous efficiency, reduces because of the not good thermal losses that causes of current expansion effect.
A kind of P, N electrode of tree leaf vein-shaped high power GaN base LED chip are provided in the application for a patent for invention of the patent No. for CN1870313, and its N type electrode, P shape electrode become tree leaf vein-shaped cross-distribution.This electrode is more even perpendicular to diagonal and parallel N electrode and the interelectrode distribution of P, but relatively poor relatively in other area distribution uniformities; Mention a kind of centering ring geometric pattern GaN base LED chip electrode among the patent No. CN201282152Y, it has improved the distributing homogeneity of electric current, but also exist not enough, the one, N, P electrode are single electrode, be difficult to be applicable to the chip of the above specification of 35mil, the 2nd, in the middle of N type electrode is arranged on, can influence routing technology for the downstream encapsulation procedure, thus influence encapsulation light efficiency.
The utility model content
Technical problem to be solved in the utility model provides a kind of novel large-power light-emitting diodes electrode, overcome in the current large-power light-emitting diodes electrode current expansion characteristic that still exists undesirable, be not suitable for 1W(watt) deficiency of above power type light-emitting diode, improve the distribution of current density uniformity, increase the light extraction efficiency of chip, improve the unequal problem of heat radiation of chip, thereby promote the photoelectric characteristic of chip.
The technical scheme that the utility model solves the problems of the technologies described above is as follows: a kind of large-power light-emitting diodes electrode, the groove that comprises the transparent conductive film that is deposited on the LED epitaxial slice, goes out in the LED epitaxial slice surface etch, be deposited on first electrode in the groove and be deposited on second electrode on the transparent conductive film, described groove and first electrode that is deposited in the groove evenly distribute on the LED epitaxial slice surface, and described second electrode and groove and first electrode that is deposited in the groove are parallel to each other and are evenly distributed.
The beneficial effects of the utility model are: first electrode that is evenly distributed and is parallel to each other on the LED epitaxial slice surface and second electrode have guaranteed that current density is between first electrode and second electrode, and the uniformity that distributes in whole LED epitaxial slice, thereby promoted the photoelectric characteristic of light-emitting diode.
Be first electrode and second electrode that bending distributes, smoothly make electric current distribution even because of turning, when having avoided in the traditional electrode structure the linearly distribution of electrode in the flex point place of straight line and straight line and the phenomenon of straight line place electric current distribution inequality, strengthened in the whole light-emitting diode uniformity of current density everywhere, guaranteed the light-emitting diode bright dipping evenly.
On the basis of technique scheme, the utility model can also be done following improvement.
Further, the described groove and first electrode are bending and distribute on the LED epitaxial slice surface, and described second electrode is bending and distributes on the LED epitaxial slice surface.
Adopt the beneficial effect of above-mentioned further scheme to be, be first electrode and second electrode that bending distributes, smoothly make electric current distribution more even because of turning, when having avoided the linearly distribution of electrode in the flex point place of straight line and straight line and the phenomenon of straight line place electric current distribution inequality, further strengthened in the whole light-emitting diode uniformity of current density everywhere, guaranteed the light-emitting diode bright dipping evenly.
Further, described etching groove is in first limit and second limit that is adjacent and the 3rd limit on LED epitaxial slice surface, second jiao of mode symmetry that is " S " type curve that intersect on first jiao of intersecting on first limit and second limit of groove and first limit and the 3rd limit extended to the 4th limit on epitaxial wafer surface, and stretches out 4 branch of a curve at the middle part near the LED epitaxial slice surface to LED epitaxial slice inner side surface symmetry; Described first electro-deposition is in groove, and groove slightly is wider than first electrode; Described second electrode extends to first angular direction, second angular direction, the first limit mid point direction respectively near LED epitaxial slice surface the 4th limit point midway; Second electrode to the line stretcher of first angular direction and second angular direction respectively be the extended groove of " S " type from first jiao and second jiao and parallel; Second electrode is respectively drawn 3 branches to second limit and the 3rd limit respectively to the extension of the first limit mid point direction, described branch respectively be on the groove that " S " type extends symmetry from first jiao and second jiao and stretch out 4 branch of a curve and parallel; Parallel with the groove that is the extension of " S " type from first jiao and second jiao respectively at the end of second electrode near symmetrical 2 branches of drawing in place, first limit.
Further, described groove is the extension of " ω " type curve to second edge direction, the 3rd edge direction, first edge direction respectively from the point midway on the 4th limit on LED epitaxial slice surface, and, extend two branch of a curve to second edge direction and the 3rd edge direction respectively to the end that first edge direction extends at groove parallel with second limit respectively with place, the 3rd limit with the 3rd limit near second limit; Described first electro-deposition is in groove, and groove slightly is wider than first electrode; Described second electrode is respectively from second jiao between first jiao between first limit, LED epitaxial slice surface and second limit and first limit and the 3rd limit, extend along second limit and the 3rd limit, and at the end that extends with to be " ω " type curve parallel to the groove of second edge direction, the extension of the 3rd edge direction; At second electrode respectively from second jiao between first jiao between first limit, LED epitaxial slice surface and second limit and first limit and the 3rd limit, along in the extension on second limit and the 3rd limit, draw branch to the middle part on LED epitaxial slice surface respectively, described branch parallels to two branch of a curve that second edge direction and the 3rd edge direction extend respectively with the end that is groove that " ω " type curve extends to first edge direction and this groove respectively; Second electrode first jiao with second jiao between the extension that is connected, and be groove end that " ω " type curve extends to first edge direction and parallel to two branch of a curve that second edge direction and the 3rd edge direction extend respectively.
Further, described groove extends between the 3rd limit and the 4th limit the 4th jiao from the third angle between second limit, LED epitaxial slice surface and the 4th limit along the 4th limit, and extend to first limit along second limit and the 3rd limit respectively from third angle and the 4th jiao, and 1/4 place near first limit becomes the extension of " U " type curve to the middle part on LED epitaxial slice surface respectively on second limit and the 3rd limit; Described first electro-deposition is in groove, and groove slightly is wider than first electrode; Described second electrode is " x " type curve-like and is deposited on the LED epitaxial slice surface, and each branch of " x " type curve becomes the extension of " U " type curve to parallel to the middle part on LED epitaxial slice surface with groove respectively at 1/4 place on second limit and close first limit, the 3rd limit respectively.
Further, described first electrode is the N electrode, and second electrode is the P electrode.
Further, described LED epitaxial slice surface is a rectangle, and its long limit and broadside are 2mil-200mil.
Further, described LED epitaxial slice surface is a square, and its length of side is 45mil.
Description of drawings
Fig. 1 is the utility model large-power light-emitting diodes electrode embodiment one structure chart;
Fig. 2 is the utility model large-power light-emitting diodes electrode embodiment two structure charts;
Fig. 3 is the utility model large-power light-emitting diodes electrode embodiment three structure charts.
Embodiment
Below in conjunction with accompanying drawing principle of the present utility model and feature are described, institute gives an actual example and only is used to explain the utility model, is not to be used to limit scope of the present utility model.
Guarantee the uniformity of CURRENT DISTRIBUTION in the light-emitting diode and bright dipping evenly, its electrode need guarantee the even distribution on the epitaxial wafer surface, when extending on the LED epitaxial slice surface, electrode occurs turning, also need the turning is designed to crooked level and smooth curve, with guarantee the turning CURRENT DISTRIBUTION evenly.
The utility model large-power light-emitting diodes electrode can be used for long limit, epitaxial wafer surface and the large-power light-emitting diodes of broadside between 2mil to 200mil, following examples only are described its structure, in manufacture process, below each embodiment all can be used for the large-power light-emitting diodes of different size.
Embodiment one
As shown in Figure 1, in the large-power light-emitting diodes electrode structure of present embodiment, deposit transparent conductive film 2 on LED epitaxial slice 1, and go out groove 3 in LED epitaxial slice 1 surface etch, groove 3 etchings are in the first limit B1 and the second limit B2 that is adjacent and the 3rd limit B3 on LED epitaxial slice 1 surface, second jiao of J2 that the first jiao of J1 that groove 3 intersects at the first limit B1 and the second limit B2 and the first limit B1 and the 3rd limit B3 intersect is the mode symmetry of " S " type curve and extends to the 4th limit B4 on epitaxial wafer 1 surface, and stretches out 4 branch of a curve at the middle part near LED epitaxial slice 1 surface to LED epitaxial slice 1 inner side surface symmetry; N electrode 4 is deposited in the groove 3, and groove 3 slightly is wider than N electrode 4; P electrode 5 from the point midway near the 4th limit B4 on LED epitaxial slice 1 surface, extends to first jiao of J1 direction, second jiao of J2 direction, first limit B1 mid point direction respectively on transparent conductive film 2; P electrode 5 to the line stretcher of first jiao of J1 direction and second jiao of J2 direction respectively be the extended groove 3 of " S " type from first jiao of J1 and second jiao of J2 and parallel; P electrode 5 is respectively drawn 3 branches to the second limit B2 and the 3rd limit B3 respectively to the extension of the first limit B1 mid point direction, each branch respectively be the groove that " S " type extends from first jiao of J1 and second jiao of J2 on 4 branch of a curve stretching out of symmetry parallel; Parallel with the groove 3 that is the extension of " S " type from first jiao of J1 and second jiao of J2 respectively at the end of 2 branches that P electrode 5 is drawn near B1 place, first limit symmetry.
When the epitaxial wafer surface of the utility model light-emitting diode length of side was 45mil, low current is lighted under 0.01mA did not have obvious dark space, shows that this electrode structure makes electric current good at the distributing homogeneity on surface.
Embodiment two
As shown in Figure 2, in the large-power light-emitting diodes electrode structure of present embodiment, deposit transparent conductive film 2 on LED epitaxial slice 1, and go out groove 3 in LED epitaxial slice 1 surface etch, groove 3 from the point midway of the 4th limit B4 on LED epitaxial slice 1 surface respectively to the second limit B2 direction, the 3rd limit B3 direction, the first limit B1 direction is " ω " type curve and extends, and parallel with the 3rd limit B3 with the second limit B2 respectively with B3 place, the 3rd limit near the second limit B2, the end that extends to the first limit B1 direction at groove 3 extends two branch of a curve to the second limit B2 direction and the 3rd limit B3 direction respectively; N electrode 4 is deposited in the groove 3, and groove 3 slightly is wider than N electrode 4; P electrode 5 on the transparent conductive film 2 respectively from first jiao of J1 between the LED epitaxial slice 1 surperficial first limit B1 and the second limit B2 and second jiao of J2 between the first limit B1 and the 3rd limit B3, extend along the second limit B2 and the 3rd limit B3, and the end that extends be " ω " type curve and parallel to the groove 3 of the second limit B2 direction, the 3rd limit B3 direction extension; At P electrode 5 respectively from first jiao of J1 between the first limit B1 on LED epitaxial slice surface 1 and the second limit B2 and second jiao of J2 between the first limit B1 and the 3rd limit B3, along in the extension of the second limit B2 and the 3rd limit B3, draw branch to the middle part on LED epitaxial slice surface 1 respectively, this branch parallels to two branch of a curve that the second limit B2 direction and the 3rd limit B3 direction are extended respectively with the end of the groove 3 that is " ω " type curve and extends to the first limit B1 direction and this groove 3 respectively; The extension that P electrode 5 is connected between first jiao of J1 and second jiao of J2 parallels to two branch of a curve that the second limit B2 direction and the 3rd limit B3 direction are extended respectively with the end of the groove 3 that is " ω " type curve and extends to the first limit B1 direction.
Embodiment three
As shown in Figure 3, in the large-power light-emitting diodes electrode structure of present embodiment, deposit transparent conductive film 2 on LED epitaxial slice 1, and go out groove 3 in LED epitaxial slice 1 surface etch, groove 3 extends to the 4th jiao of J4 between the 3rd limit B3 and the 4th limit B4 from the third angle J3 between LED epitaxial slice 1 surperficial second limit B2 and the 4th limit B4 along the 4th limit B4, and extend to the first limit B1 along the second limit B2 and the 3rd limit B3 respectively, and becomes the extension of " U " type curve to the middle part on LED epitaxial slice 1 surface respectively near 1/4 place of the first limit B1 at the second limit B2 and the 3rd limit B3 from third angle J3 and the 4th jiao of J4; N electrode 4 is deposited in the groove 3, and groove 3 slightly is wider than N electrode 4; P electrode 5 is " x " type curve-like deposition on transparent conductive film 2, each branch of " x " type curve becomes the extension of " U " type curve to parallel to the middle part on LED epitaxial slice 1 surface with groove 3 respectively at 1/4 place of the second limit B2 and the close first limit B1 of the 3rd limit B3 respectively.
The above only is preferred embodiment of the present utility model, and is in order to restriction the utility model, not all within spirit of the present utility model and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (8)
1. large-power light-emitting diodes electrode, the groove that comprises the transparent conductive film that is deposited on the LED epitaxial slice, goes out in the LED epitaxial slice surface etch, be deposited on first electrode in the groove and be deposited on second electrode on the transparent conductive film, it is characterized in that: described groove and first electrode that is deposited in the groove evenly distribute on the LED epitaxial slice surface, and described second electrode and groove and first electrode that is deposited in the groove are parallel to each other and are evenly distributed.
2. large-power light-emitting diodes electrode according to claim 1 is characterized in that: the described groove and first electrode are bending and distribute on the LED epitaxial slice surface, and described second electrode is bending and distributes on the LED epitaxial slice surface.
3. large-power light-emitting diodes electrode according to claim 2, it is characterized in that: described etching groove is in first limit on LED epitaxial slice surface (B1) and second limit (B2) that is adjacent and the 3rd limit (B3), groove is the mode symmetry of " S " type curve and extends to the 4th limit on epitaxial wafer surface (B4) at first limit (B1) and second limit (B2) crossing second jiao crossing (J2) of first jiao (J1) and first limit (B1) and the 3rd limit (B3), and stretches out 4 branch of a curve at the middle part near the LED epitaxial slice surface to LED epitaxial slice inner side surface symmetry; Described first electro-deposition is in groove, and groove slightly is wider than first electrode; Described second electrode extends to first jiao of (J1) direction, second jiao of (J2) direction, first limit (B1) mid point direction respectively near the 4th limit (B4), LED epitaxial slice surface point midway; Second electrode to the line stretcher of first jiao of (J1) direction and second jiao of (J2) direction respectively be the extended groove of " S " type from first jiao (J1) and second jiao (J2) and parallel; Second electrode is respectively drawn 3 branches to second limit (B2) and the 3rd limit (B3) respectively to the extension of first limit (B1) mid point direction, described branch respectively be the groove that " S " type extends from first jiao (J1) and second jiao (J2) on symmetry stretch out 4 branch of a curve and parallel; The end of locating 2 branches that symmetry draws near first limit (B1) at second electrode parallels with the groove that is the extension of " S " type from first jiao (J1) and second jiao (J2) respectively.
4. large-power light-emitting diodes electrode according to claim 2, it is characterized in that: described groove is the extension of " ω " type curve to second limit (B2) direction, the 3rd limit (B3) direction, first limit (B1) direction respectively from the point midway on the 4th limit (B4) on LED epitaxial slice surface, and locating parallelly with second limit (B2) respectively with the 3rd limit (B3) near second limit (B2) and the 3rd limit (B3), extend two branch of a curve to second limit (B2) direction and the 3rd limit (B3) direction at groove respectively to the end of first limit (B1) direction extension; Described first electro-deposition is in groove, and groove slightly is wider than first electrode; Described second electrode is respectively from first jiao (J1) and first limit (B1) and second jiao (J2) between the 3rd limit (B3) between LED epitaxial slice first limit (B1), surface and second limit (B2), extend along second limit (B2) and the 3rd limit (B3), and at the end that extends with to be " ω " type curve parallel to the groove of second limit (B2) direction, the extension of the 3rd limit (B3) direction; At second electrode respectively from first jiao (J1) and first limit (B1) and second jiao (J2) between the 3rd limit (B3) between first limit (B1), LED epitaxial slice surface and second limit (B2), along in the extension of second limit (B2) and the 3rd limit (B3), draw branch to the middle part on LED epitaxial slice surface respectively, described branch parallels to two branch of a curve that second limit (B2) direction and the 3rd limit (B3) direction are extended respectively with the end that is groove that " ω " type curve extends to first limit (B1) direction and this groove respectively; The extension that second electrode is connected between first jiao (J1) and second jiao (J2) and is groove end that " ω " type curve extends to first limit (B1) direction and parallels to two branch of a curve that second limit (B2) direction and the 3rd limit (B3) direction are extended respectively.
5. large-power light-emitting diodes electrode according to claim 2, it is characterized in that: described groove extends to the 4th jiao (J4) between the 3rd limit (B3) and the 4th limit (B4) from the third angle (J3) between LED epitaxial slice second limit (B2), surface and the 4th limit (B4) along the 4th limit (B4), and extend to first limit (B1) along second limit (B2) and the 3rd limit (B3) respectively, and become the extension of " U " type curve to the middle part on LED epitaxial slice surface respectively near 1/4 place on first limit (B1) at second limit (B2) and the 3rd limit (B3) from third angle (J3) and the 4th jiao (J4); Described first electro-deposition is in groove, and groove slightly is wider than first electrode; Described second electrode is " x " type curve-like and is deposited on the LED epitaxial slice surface, and each branch of " x " type curve becomes the extension of " U " type curve to parallel to the middle part on LED epitaxial slice surface with groove respectively at 1/4 place on second limit (B2) and the 3rd limit (B3) close first limit (B1) respectively.
6. according to each described large-power light-emitting diodes electrode of claim 1 to 5, it is characterized in that: described first electrode is the N electrode, and second electrode is the P electrode.
7. according to each described large-power light-emitting diodes electrode of claim 1 to 5, it is characterized in that: described LED epitaxial slice surface is rectangle, and its long limit and broadside are 2mil-200mil.
8. large-power light-emitting diodes electrode according to claim 7 is characterized in that: described LED epitaxial slice surface is square, and its length of side is 45mil.
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| CN201020194100XU CN201804902U (en) | 2010-05-18 | 2010-05-18 | Electrode of high-power LED |
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| CN201020194100XU CN201804902U (en) | 2010-05-18 | 2010-05-18 | Electrode of high-power LED |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606418A (en) * | 2013-10-22 | 2014-02-26 | 华南师范大学 | Preparation method of leaf-shaped transparent conductive electrode |
| TWI504021B (en) * | 2011-08-11 | 2015-10-11 | Lextar Electronics Corp | Semiconductor light emitting device |
| CN108807629A (en) * | 2018-08-17 | 2018-11-13 | 厦门乾照光电股份有限公司 | A kind of light emitting diode and production method |
| CN109326693A (en) * | 2013-12-09 | 2019-02-12 | 日亚化学工业株式会社 | Light emitting element |
| CN110931612A (en) * | 2019-11-20 | 2020-03-27 | 华南师范大学 | A visible light communication light-emitting device with a multi-ring square unit structure and a preparation method thereof |
-
2010
- 2010-05-18 CN CN201020194100XU patent/CN201804902U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI504021B (en) * | 2011-08-11 | 2015-10-11 | Lextar Electronics Corp | Semiconductor light emitting device |
| CN103606418A (en) * | 2013-10-22 | 2014-02-26 | 华南师范大学 | Preparation method of leaf-shaped transparent conductive electrode |
| CN103606418B (en) * | 2013-10-22 | 2015-10-28 | 华南师范大学 | A kind of preparation method of leaf shape transparency conductive electrode |
| CN109326693A (en) * | 2013-12-09 | 2019-02-12 | 日亚化学工业株式会社 | Light emitting element |
| CN108807629A (en) * | 2018-08-17 | 2018-11-13 | 厦门乾照光电股份有限公司 | A kind of light emitting diode and production method |
| CN110931612A (en) * | 2019-11-20 | 2020-03-27 | 华南师范大学 | A visible light communication light-emitting device with a multi-ring square unit structure and a preparation method thereof |
| CN110931612B (en) * | 2019-11-20 | 2021-06-22 | 华南师范大学 | A visible light communication light-emitting device with a multi-ring square unit structure and a preparation method thereof |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Electrode of high-power LED Effective date of registration: 20110815 Granted publication date: 20110420 Pledgee: Bank of Hankou, Limited by Share Ltd, Optics Valley branch Pledgor: Diyuan Photoelectric Science & Technology Co., Ltd., Wuhan Registration number: 2011990000310 |
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Date of cancellation: 20130315 Granted publication date: 20110420 Pledgee: Bank of Hankou, Limited by Share Ltd, Optics Valley branch Pledgor: Diyuan Photoelectric Science & Technology Co., Ltd., Wuhan Registration number: 2011990000310 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Electrode of high-power LED Effective date of registration: 20130315 Granted publication date: 20110420 Pledgee: Bank of Hankou Limited by Share Ltd Optics Valley branch Pledgor: Diyuan Photoelectric Science & Technology Co., Ltd., Wuhan Registration number: 2013990000147 |
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Owner name: AQUALITE OPTOELECTRONICS CO., LTD. Free format text: FORMER NAME: DIYUAN PHOTOELECTRIC SCIENCE + TECHNOLOGY CO., LTD., WUHAN |
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| CP03 | Change of name, title or address |
Address after: 430000 No. 227, Optics Valley Road, East Lake Development Zone, Hubei, Wuhan, China Patentee after: AQUALITE OPTOELECTRONICS CO., LTD. Address before: 430205 No. 8, Optics Valley Road, East Lake hi tech Development Zone, Hubei, Wuhan, China Patentee before: Diyuan Photoelectric Science & Technology Co., Ltd., Wuhan |
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Date of cancellation: 20150430 Granted publication date: 20110420 Pledgee: Bank of Hankou Limited by Share Ltd Optics Valley branch Pledgor: AQUALITE OPTOELECTRONICS CO., LTD. Registration number: 2013990000147 |
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Change date: 20150430 Registration number: 2013990000147 Pledgor after: AQUALITE OPTOELECTRONICS CO., LTD. Pledgor before: Diyuan Photoelectric Science & Technology Co., Ltd., Wuhan |
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