CN201738000U - Baseplate retainer used for ECR(electronic convolution resonance) plasma sputtering device - Google Patents

Abstract

The utility model discloses a substrate holder for an ECR plasma sputtering device, which comprises an original substrate (3), and a fixed shaft (4) connected with the original substrate (3), which is sequentially arranged axially on the fixed shaft (4) The support plate (5) and the fixed flange (2) used to connect the vacuum chamber, the drive shaft (6) parallel to the fixed shaft (4) runs through the support plate (5) and the fixed flange (2). The outer end of the shaft (6) is provided with a rotating handle (7); it is characterized in that an enlarged substrate (8) is arranged on the original substrate (3), and a driven shaft (9) runs through the enlarged substrate (8) perpendicularly, The driven shaft (9) and the transmission shaft (6) are respectively provided with mutually meshing gears (11), and the inner ends of the driven shaft (9) and the transmission shaft (6) are respectively fixed with upper and lower baffle plates (12, 13); the driven shaft (9) runs through the expanded base plate (8), and is close to the outer periphery of the expanded base plate (8).

Description

A substrate holder for an ECR plasma sputtering device

technical field

The utility model relates to an electron cyclotron resonance (ECR) plasma sputtering device, in particular to a substrate holder for an ECR plasma sputtering device capable of increasing the area of a sputtering substrate.

Background technique

ECR plasma sputtering processing technology has been widely used in various thin film processes due to its excellent performance in micro-nano structure compounding, material surface processing and modification, and element doping, which has attracted the attention and research of many scholars. . ECR plasma sputtering processing technology originated from electron cyclotron resonance technology in the research of controllable nuclear fusion. When the frequency of electron cyclotron motion is equal to the frequency of microwave propagating along the magnetic field, resonance occurs. Under the action of magnetic field, the radius of electron cyclotron motion gradually increases. Large, the energy continues to increase, and finally collides with gas molecules to form plasma; after a bias is applied to the target, the plasma bombards the sputtering target, and the target atoms generated by sputtering collide with the electrons in the plasma flow that are orbiting Ionization occurs to obtain ions; the ions move toward the substrate under the bias of the substrate, and finally deposit on the surface of the sample to form a film.

At present, in the field of thin film preparation by ECR plasma sputtering, it is generally hoped that the plasma can be uniformly filled in the entire vacuum chamber, and a thin film with the largest area can be deposited on the substrate holder; however, in the existing ECR plasma sputtering device, the substrate holder In this method, a uniaxially controlled baffle is set in front of the substrate holder. The baffle occupies the cross-sectional area of the vacuum chamber, thereby affecting the area of the deposited film, which limits the size of the sample on the substrate holder. the

Contents of the invention

The purpose of the utility model is to provide a substrate holder for an ECR plasma sputtering device, which can increase the area of the sputtering substrate without changing the cross-sectional area of the vacuum chamber, thereby effectively increasing the deposition area.

In order to achieve the above object, the utility model adopts the following technical solutions to achieve.

A substrate holder for an ECR plasma sputtering device, comprising an original substrate, a fixed shaft connected to the original substrate, a support plate and a fixed flange arranged axially on the fixed shaft in turn, and the support plate and the fixed flange run through A transmission shaft parallel to the fixed shaft, the outer end of the transmission shaft is provided with a rotating handle;

It is characterized in that,

An enlarged substrate is arranged on the original substrate, and a driven shaft runs through the enlarged substrate perpendicularly. The driven shaft and the transmission shaft are respectively provided with mutually meshing gears, and the inner ends of the driven shaft and the transmission shaft are respectively fixed with upper and lower baffles. ; The driven shaft runs through the position of the enlarged substrate, close to the outer periphery of the enlarged substrate.

Further improvement and characteristics of the present utility model are:

An insulating sleeve is arranged between the driven shaft and the enlarged base plate.

The enlarged substrate is provided with a sample holder; the sample holder is a pressure ring connected to the enlarged substrate by fixing screws; or the sample holder is a sample plate connected to the enlarged substrate by fixing screws, and the side edge of the sample plate is provided with locking screws .

Compared with the prior art, the substrate holder for the ECR plasma sputtering device of the utility model has the following beneficial effects: by fixing the enlarged substrate on the original substrate, two upper and lower baffles are arranged in front of the enlarged substrate, which can Effectively increase the area of the deposited film; the upper and lower baffles can be driven by the transmission shaft, the driven shaft and a pair of gear pairs, and can be opened and closed accurately and flexibly in the cavity space, which can precisely control the exposure and shielding of the expanded substrate Time to achieve etching, deposition and protection of samples mounted on enlarged substrates at different time periods. Mounting a sample holder on an enlarged base plate can change the type of sample not only for thin slice type samples but also for thin block type (such as bearing ring) samples. The utility model is improved on the basis of the original substrate holder for the ECR plasma sputtering device, and the improved structure is simple, reliable and low in cost, and can maximize the increase of the deposition area.

Description of drawings

The utility model will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

1 is a schematic diagram of the structure of a vacuum chamber of a substrate holder for an ECR plasma sputtering device;

Fig. 2 is a schematic structural view of the substrate holder in the utility model;

Fig. 3 is the exploded view of Fig. 2;

In the figure: 1. Vacuum cavity; 101 Cage flange; 102 Molecular pump flange; 103 Right chamber; 104 Target rack; 105 Left chamber; 2. Fixed flange; 3. Original substrate; 4. Fixed shaft ; 5, support plate; 6, transmission shaft; 7, rotating handle; 8, enlarged base plate; 9, driven shaft; 10, insulating sleeve; 11, gear; 12, upper baffle plate; 13, lower baffle plate; 14, Sample fixture; 1401 pressure ring; 1402 sample plate.

Detailed ways

Referring to Fig. 1, it is a vacuum chamber of an ECR plasma sputtering device, the vacuum chamber 1 includes: a left chamber 105 and a right chamber 103, a target rack 104 is arranged in the middle of the left chamber 105 and the right chamber 103, and the right chamber 103 is provided with a cage flange 101 in the axial direction, and a molecular pump flange 102 is provided in the radial direction.

Referring to FIG. 2 and FIG. 3 , the substrate holder protrudes into the vacuum chamber 1 and connects with the holder flange 101 provided on the right chamber 103 through the fixing flange 2 . The substrate holder of the present utility model includes an original substrate 3, a fixed shaft 4 connected to the original substrate 3, a fixed flange 2 and a support plate 5 are arranged axially on the fixed shaft 4, and the support plate 5 and the fixed flange 2 run through There is a transmission shaft 6 parallel to the fixed shaft 4, and the outer end of the transmission shaft 6 is provided with a rotating handle 7. The enlarged substrate 8 is fixed on the original substrate 3 by countersunk screws, and the driven shaft 9 is perpendicular to the enlarged substrate 8 . The driven shaft 9 passes through the enlarged substrate 8 and is close to the outer periphery of the enlarged substrate 8 . In this embodiment, a modified method is adopted, and lugs are set on the outer periphery of the enlarged base plate 8, and bearing holes for penetrating the driven shaft 9 are set on the lugs, which also play a role in supporting the driven shaft 9, and the bearing holes are provided with The insulating sleeve 10 isolates the electrical connection between the driven shaft 9 and the enlarged substrate 8 to avoid short circuit when a bias voltage is applied to the enlarged substrate 8 .

The right end of the driven shaft 9 and the transmission shaft 6 are respectively equipped with mutually meshing gears 11, and the transmission relationship between the transmission shaft 6 end and the driven shaft 9 is realized by this pair of gear pairs. The inner end (i.e. the left end) of the driven shaft 9 and the transmission shaft 6 is respectively fixed with upper and lower baffles 12, 13, and the upper and lower baffles 12, 13 are semicircular plates, which can be operated by turning the handle 7. Drive the transmission shaft 6, and the transmission shaft 6 drives the driven shaft 9 through the gear pair at the same time to realize the opening and closing of the upper and lower baffles 12 and 13. The utility model replaces a baffle on the existing substrate holder by the upper and lower baffles 12 and 13, thereby realizing the enlargement of the effective deposition area and expanding the production capacity of the existing substrate holder for ECR plasma sputtering devices.

A sample holder is provided on the enlarged substrate 8 . The sample holder 14 is a pressure ring 1401 connected to the enlarged substrate 8 by fixing screws; or a sample disc 1402 connected to the enlarged substrate 8 by fixing screws, and the side edge of the sample disc 1402 is provided with locking screws.

When in use, put the substrate into the substrate holder after cleaning and drying, and adjust the axial distance between the target and the substrate. After the vacuum degree in the vacuum chamber 1 is evacuated to 4×10 ^-4 Pa, Ar gas is introduced to reduce the vacuum degree to 2×10 ^-2 Pa. Turn on the current of the magnetic coil to 420 A, turn on the microwave source, and generate plasma in the vacuum chamber at this time. Adjust to make the microwave coupling reach the best state and stabilize it for 20 minutes; then use the structure in the utility model to rotate the handle 7, and the transmission shaft 6 will rotate accordingly, and the driven shaft 9 will be driven to rotate through the gear fixed on it, so that The upper baffle plate 12 and the lower baffle plate 13 connected to the left ends of the transmission shaft 6 and the driven shaft 9 are opened to both sides, exposing the enlarged substrate 8 in the plasma chamber, and sputtering and cleaning the surface of the substrate with Ar ions. After the substrate is sputtered and cleaned for 3 minutes, turn the handle 7 in the opposite direction, the upper baffle 12 and the lower baffle 13 are closed in the middle, apply the target bias voltage, and turn the handle 7 again after stabilizing for 3 minutes to open the upper and lower baffles 12, 13, start to deposit, control the deposition time, and realize the preparation of the sample film. Opening and closing the upper and lower baffles 12 and 13 in such a cycle can meet the requirements of etching and cleaning the sample surface, thin film deposition and protecting the sample surface at different time periods.

Claims (5)

1. A substrate holder for an ECR plasma sputtering device, comprising an original substrate (3), a fixed shaft (4) connected to the original substrate (3), and a support plate axially arranged on the fixed shaft (4) in sequence (5) and the fixed flange (2), the transmission shaft (6) parallel to the fixed shaft (4) runs through the support plate (5) and the fixed flange (2), and the outer end of the transmission shaft (6) is set There is a rotating handle (7); it is characterized in that an enlarged base plate (8) is arranged on the original base plate (3), and a driven shaft (9) runs through the enlarged base plate (8) perpendicularly, the driven shaft (9) and the transmission shaft (6) The gears (11) meshing with each other are respectively provided, and the inner ends of the driven shaft (9) and the transmission shaft (6) are respectively fixed with upper and lower baffles (12, 13); the driven shaft ( 9) Penetrating through the position of the enlarged substrate (8), close to the outer periphery of the enlarged substrate (8). 2 . The substrate holder for an ECR plasma sputtering device according to claim 1 , characterized in that an insulating sleeve ( 10 ) is provided between the driven shaft ( 9 ) and the enlarged substrate ( 8 ). 3 . 3 . The substrate holder for an ECR plasma sputtering device according to claim 1 , characterized in that a sample holder ( 14 ) is arranged on the enlarged substrate ( 8 ). 4 . 4. The substrate holder for an ECR plasma sputtering device according to claim 3, characterized in that the sample holder (14) is a pressure ring (1401) connected to the enlarged substrate (8) by fixing screws. 5. The substrate holder for ECR plasma sputtering device according to claim 3, characterized in that, the sample holder (14) is a sample tray (1402) connected to the enlarged substrate (8) by fixing screws, the sample tray The side edge of (1402) is provided with locking screws.

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