CN201309980Y - Rod taking device capable of taking out multiple polycrystalline silicon rods at one time and rod taking device assembly - Google Patents
Rod taking device capable of taking out multiple polycrystalline silicon rods at one time and rod taking device assembly Download PDFInfo
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- CN201309980Y CN201309980Y CNU2008201374295U CN200820137429U CN201309980Y CN 201309980 Y CN201309980 Y CN 201309980Y CN U2008201374295 U CNU2008201374295 U CN U2008201374295U CN 200820137429 U CN200820137429 U CN 200820137429U CN 201309980 Y CN201309980 Y CN 201309980Y
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- bar device
- polycrystalline silicon
- getting
- rod
- silicon rods
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 260
- 238000002955 isolation Methods 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 abstract description 42
- 238000000034 method Methods 0.000 abstract description 38
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 35
- 229910052710 silicon Inorganic materials 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- 238000006722 reduction reaction Methods 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 235000011089 carbon dioxide Nutrition 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005243 fluidization Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
The utility model relates to a transfer after photovoltaic and semiconductor technology field's polycrystalline silicon rod production is finished gets excellent method and gets excellent device and get excellent device sub-assembly, especially relates to one kind and once can take out many polycrystalline silicon rod get excellent method and get excellent device sub-assembly, in the face of many polycrystalline silicon rods that distribute on coaxial a plurality of rings, once only get the polycrystalline silicon rod that distributes on outermost circle ring earlier, once only get the polycrystalline silicon rod on inferior outer lane ring again, from outside to inside in proper order, all polycrystalline silicon rods are taken out to the round land. The rod taking device consists of a wall and a cavity; the lower part of the rod taking device is also provided with a contact piece which can support the broken polysilicon rod. The risk that the polycrystalline silicon rod is polluted in the transferring process is reduced; by using the utility model, the production process is greatly simplified, the time for transferring the polysilicon rod is reduced, and the production period of the polysilicon is reduced; meanwhile, the danger that operators are easily scratched by the polycrystalline silicon rod is solved.
Description
Technical field
Bar device is got in transfer after the polycrystalline silicon rod production that the utility model relates to a kind of photovoltaic and technical field of semiconductors finishes, particularly relates to a kind of getting bar device and getting the bar device subassembly of many polycrystalline silicon rods of once taking out.
Background technology
Owing to the peculiar property of silicon materials, become the basis of hyundai electronics industry and information society.Silicon materials are divided by purity, can be divided into Pure Silicon Metal and semi-conductor (electronic-grade) silicon; Press structural form and divide, can be divided into non-crystalline silicon, polysilicon and silicon single crystal.Wherein polysilicon is divided into high purity polycrystalline silicon, membrane polysilicon, banded polysilicon and casting polycrystalline silicon again, and silicon single crystal is divided into study on floating zone silicon and pulling of silicon single crystal; Polysilicon and silicon single crystal can be referred to as crystalline silicon again.Pure Silicon Metal is a low-purity silicon, is the raw material of high purity polycrystalline silicon; High purity polycrystalline silicon then is the raw material of casting polycrystalline silicon, study on floating zone silicon and pulling of silicon single crystal; And amorphous silicon membrane and membrane polysilicon are mainly decomposed by high purity silane gas or other silicon-containing gas or reaction obtains.
The purity of high purity polycrystalline silicon is very high, and general requirement purity reaches 99.999999%-99.9999999%.Foreign matter content will drop to 10
-9Level.High purity polycrystalline silicon is generally purified by chemistry or physical method by metalluragical silicon and is obtained.Chemical purification is meant passes through chemical reaction, silicon is converted into intermediate compound, utilize technology purification intermediate compounds such as rectification and purification again, make it to reach high purity, and then intermediate compound is passed in the reactor, by utilizing chemical vapour deposition technique or fluidization to be reduced into silicon, the HIGH-PURITY SILICON of this moment is a polycrystalline state, can reach the requirement of semi-conductor industry.According to the difference of intermediate compound, the chemical purification polysilicon can be divided into different technological lines, plays common characteristic to be: intermediate compound is purified easily.At present, the technology of using in industry has: the hydrogen reduction of trichlorosilane (intermediate compound is a trichlorosilane), silane decomposition (intermediate compound is a silane) and silicon tetrachloride hydrogen reduction method (intermediate compound is a silicon tetrachloride).
Fluidization is meant the high purity polycrystalline silicon powder is placed on the heated fluidized bed, feeds intermediate compound and high-purity hydrogen, directly forms the silicon drop, and final set becomes high purity polycrystalline silicon.
Chemical Vapor deposition process is meant that (we call polycrystalline silicon reducing furnace to the reactor that carries out chemical vapour deposition reaction with placing electrode on the polycrystalline silicon reducing furnace, polycrystalline silicon reducing furnace mainly contains base plate and cover is formed, wherein on the reduction furnace base plate electrode that is used for heating usefulness is installed), by paired electrode, to place silicon plug (about 5 millimeters of the diameter) energising on the electrode to be heated to more than 1100 ℃, feed intermediate compound and high-purity hydrogen, reduction reaction takes place, adopting chemical vapour deposition technique to generate HIGH-PURITY SILICON is deposited on the silicon plug, silicon rod is constantly grown up, reach tens of millimeters to hundreds of millimeters up to the diameter of silicon rod.
Produce high purity polycrystalline silicon for adopting chemical vapour deposition technique, after obtaining high-purity polysilicon rod by chemical vapour deposition reaction, existence is transferred to the process in next production process workshop with polycrystalline silicon rod from the polycrystalline silicon reducing furnace base plate, and we call this process and get rod motion.Getting rod motion is a manually-operated process, and it relates to operative employee's safety, the quality of polycrystalline silicon rod, and the production cycle of polycrystalline silicon rod.
Traditional excellent method of getting is at present: after question response is finished, the cover of reduction furnace is removed from base plate, polycrystalline silicon rod is exposed in the environment, with artificial or mechanical manipulator the graphite chuck of silicon rod bottom is broken away from electrode on the reactor base plate, with silicon rod taking-up in pairs, then polycrystalline silicon rod is transported to next production plant.Traditional excellent method of getting exists many defectives, and first, traditional get excellent method and polycrystalline silicon rod is exposed to gets rod in the environment, can make polycrystalline silicon rod by the ion in the environment, carbonic acid gas and other materials pollution, influence the quality of polycrystalline silicon rod; The second, traditional get excellent method and require artificial or mechanical manipulator is transported to next production plant to polycrystalline silicon rod one after another, once can only transport a pair of, hydrogen reduction furnace for polysilicon generally is designed to 24 pairs or 18 pairs of polycrystalline silicon rods at present, for example get the reduction furnace that excellent object is 24 pairs of rods, require artificial or mechanical manipulator need transport number of times up to 24 times, not only operate loaded down with trivial detailsly, and it is long to get excellent elapsed time; Three, because must etc. all polycrystalline silicon rods be shifted out from the transfer of reduction furnace base plate, just can carry out reduction furnace base plate cleaning, carry out the reaction of next heat, owing to traditional get excellent method to get the rod time long, can have influence on the reaction of next heat like this, promptly prolong the production cycle; Four, because polysilicon is a kind of very sharp material, when manually getting rod, silicon rod is easy to generate fracture, the scratch operator.
Summary of the invention
The purpose of this utility model is to provide once can take out getting bar device and getting the bar device subassembly of many polycrystalline silicon rods, has reduced the contaminated risk of polycrystalline silicon rod in transfer process; Use the utility model, simplified production technique greatly, reduced transfer polycrystalline silicon rod required time, reduced the production of polysilicon cycle; Solved the operative employee simultaneously easily by the danger of polycrystalline silicon rod scratch.
It is very outstanding to the contribution of technical progress that disposable transfer polycrystalline silicon rod has reduced required time.This means that polycrystalline silicon furnace can drop in next time the production more fast.
The technical solution of the utility model is:
Once can take out the excellent method of getting of many polycrystalline silicon rods, wherein: in the face of being distributed in many polycrystalline silicon rods on co-axial a plurality of annulus, the disposable polycrystalline silicon rod that is distributed on the outmost turns annulus of getting of elder generation, property is got the polycrystalline silicon rod on time outer ring annulus again, successively from outside to inside, one enclose the land and take out all polycrystalline silicon rods.
Once can take out the excellent method of getting of many polycrystalline silicon rods, wherein: the outside that many polycrystalline silicon rods that are positioned at polysilicon body of heater base plate to be removed such as at first a cavity of getting bar device is covered on, contact element by fracture usefulness applies strength and makes many polycrystalline silicon rods of character fragility rupture with the position that contact of contact element of fracture usefulness again, polycrystalline silicon rod falls into the cavity of getting bar device, the contact element that adopt to support usefulness supports polycrystalline silicon rod and the polycrystalline silicon rod of the bulk of fracture is continued to be contained in the cavity of getting bar device and can landing not go out cavity, move up at last and get bar device and leave polysilicon body of heater base plate, promptly finish and once can take out the excellent task of getting of many polycrystalline silicon rods.
Once can take out the excellent method of getting of many polycrystalline silicon rods, wherein: the outside that many polycrystalline silicon rods that are positioned at polysilicon body of heater base plate to be removed such as at first a cavity of getting bar device is covered on, the contact element of fracture usefulness adopts impact hammer, impact hammer passes the wall of getting bar device, contact element by fracture usefulness applies many polycrystalline silicon rods of strength bump again, make many polycrystalline silicon rods of character fragility rupture at the position that the contact element with fracture usefulness contacts, polycrystalline silicon rod falls into the cavity of getting bar device, the contact element that adopt to support usefulness supports polycrystalline silicon rod and the polycrystalline silicon rod of the bulk of fracture is continued to be contained in the cavity of getting bar device and can landing not go out cavity, move up at last and get bar device and leave polysilicon body of heater base plate, promptly finish and once can take out the excellent task of getting of many polycrystalline silicon rods.
Once can take out the excellent method of getting of many polycrystalline silicon rods, wherein: the outside that many polycrystalline silicon rods that are positioned at polysilicon body of heater base plate to be removed such as at first a cavity of getting bar device is covered on, contact element with fracture usefulness is fixed on many polycrystalline silicon rods and gets on the bar device, contact element by fracture usefulness applies the position fracture that strength makes that many polycrystalline silicon rods of character fragility are contacting with contact element again, polycrystalline silicon rod falls into the cavity of getting bar device, the contact element that adopt to support usefulness supports polycrystalline silicon rod and the polycrystalline silicon rod of the bulk of fracture is continued to be contained in the cavity of getting bar device and can landing not go out cavity, move up at last and get bar device and leave polysilicon body of heater base plate, finish and once can take out the excellent task of getting of many polycrystalline silicon rods.
Once can take out the excellent method of getting of many polycrystalline silicon rods, wherein: contact element is arranged on the wall of getting bar device.
Once can take out the excellent method of getting of many polycrystalline silicon rods, wherein: increased the step that guide is installed cover on etc. the step of the outside that is positioned at many polycrystalline silicon rods on the polysilicon body of heater base plate to be removed at the cavity of one being got bar device before: on polysilicon body of heater bottom edge, be fixed with and help getting the excellent guide of getting that the bar device outer wall moves up and down accurately.
Once can take out the bar device of getting of many polycrystalline silicon rods, wherein: get bar device and form around the cavity that forms by wall and wall; Get the bar device bottom and also be provided with the contact element that can support post-rift polycrystalline silicon rod.
Once can take out the bar device of getting of many polycrystalline silicon rods, wherein: the contact element that can support post-rift polycrystalline silicon rod is arranged on the wall of getting bar device.
Once can take out the bar device of getting of many polycrystalline silicon rods, wherein: the contact element of fracture usefulness is arranged on the wall of getting bar device.
Once can take out the bar device of getting of many polycrystalline silicon rods, wherein: get bar device and be provided with the web member that can flexibly connect with crane.
Once can take out the bar device of getting of many polycrystalline silicon rods, wherein: get outside the wall of bar device and be socketed with the clip device.
Once can take out the bar device of getting of many polycrystalline silicon rods, wherein: comprise two concentric inner rings cylindraceous and outer ring, connect blade by some isolation between inner ring and the outer ring and connect; The outer ring is connected blade with inner ring and has formed the wall of getting bar device with isolation, wall is around forming cavity, get bar device wall can by contact element with polycrystalline silicon rod with get bar device and be fixed together.
Once can take out the bar device of getting of many polycrystalline silicon rods, wherein: get the rod door and be installed on the wall of getting bar device.
That once can take out many polycrystalline silicon rods gets the bar device subassembly, wherein: comprise that the different nexine of concentric radius cylindraceous gets that bar device, middle level are got bar device, skin is got bar device; The middle level is got bar device and is positioned at skin and gets bar device center; Nexine is got bar device and is positioned at the middle level and gets bar device center.
That once can take out many polycrystalline silicon rods gets the bar device subassembly, wherein: comprise that the different nexine of concentric radius cylindraceous gets that bar device, middle level are got bar device, skin is got bar device; The middle level is got bar device and is positioned at skin and gets bar device center; Nexine is got bar device and is positioned at the middle level and gets bar device center; Nexine gets that bar device, middle level are got bar device, skin is got the bar device top and is fixed on the crossbeam by corresponding active connection, and crossbeam connects crane outward.
Polycrystalline silicon rod is a kind of material of very easy fracture, the sharp easy scuffing operative employee of fracture port.
Owing to present get excellent method and not only the safety of getting the clubs workmanship is not ensured, and there is the danger of being polluted by the ion in the environment, carbonic acid gas and other materials in the polycrystalline silicon rod that is exposed in the environment, influences the quality of polycrystalline silicon rod; It is long to get excellent elapsed time.Under this background, it all is polycrystalline silicon rod to be placed under the condition that protects in the cavity of getting excellent device operate that the polysilicon that the utility model proposes is got rod motion, be exposed on the danger that the polycrystalline silicon rod in the environment scratches so eliminated the operative employee, also solved the contaminated problem of polycrystalline silicon rod meeting simultaneously; With respect to traditional excellent method of getting, for example get the reduction furnace that excellent object is 24 pairs of rods, crane need transport number of times up to 24 times, and uses the utility model to get rod, and crane only need transport 1-8 time.Normally 3-5 time.
Advantage of the present utility model and principle of work:, have three layers because the silicon rod that obtains through chemical vapour deposition reaction is to be on the bottom plate electrode that in layer is grown in reduction furnace circle-shapedly.Present polycrystalline silicon reducing furnace 24 pairs, the 18 pairs polycrystalline silicon rods that generally are designed to grow.With the 24 pairs of rods of growing is example, and skin has 12 pairs of silicon rods, and there are 8 pairs of silicon rods in the middle level, and internal layer has 4 pairs of silicon rods.The utility model has adopted and has got rod by different level based on these characteristics, adopts the utility model operation for convenience exactly, and all light equipment can move by hand, and heavy equipment moves with crane.Earlier outermost 12 pairs of disposable taking-ups of silicon rod, use crane with crane again, use crane at last 4 pairs of disposable taking-ups of silicon rod of internal layer 8 pairs of disposable taking-ups of silicon rod in middle level.This gets bar device and satisfies in getting rod motion and earlier polycrystalline silicon rod to be protected, and has solved traditional excellent present situation of getting that silicon rod is exposed in the environment.It is not only safe to adopt this to get bar device, guarantees the silicon rod quality, and reduces and get excellent elapsed time.
Description of drawings
Fig. 1 is a front view of getting the bar device user mode;
Fig. 2 is a vertical view of getting the bar device user mode;
Fig. 3 is the synoptic diagram during with polycrystalline silicon rod 7 unloading of getting in the bar device;
Fig. 4 is a front view of getting bar device subassembly user mode;
Fig. 5 is a vertical view of getting bar device subassembly user mode;
Reference numeral: crossbeam 1, web member 2, cavity 3, wall 4, guide 5, contact element 6, polycrystalline silicon rod 7, crane 8, isolate connect blade 9, inner ring 10, outer ring 11, polysilicon body of heater base plate 12, get rod door 13, skin is got bar device 14, bar device 15 is got in the middle level, nexine is got bar device 16, hammer 17, operative employee 18, ladder 19, truck 20.
Embodiment
Preparation will wait the mode that is positioned at the many polycrystalline silicon rods 7 disposable taking-ups on the polysilicon body of heater base plate 12 to be removed: can be with the 7 disposable whole taking-ups of the whole many polycrystalline silicon rods on the outmost turns annulus; Also can be with the 7 disposable whole taking-ups of the whole many polycrystalline silicon rods on the annulus of inferior outer ring; Also can be with the 7 disposable whole taking-ups of the whole many polycrystalline silicon rods on the inner ring annulus; Can also be by every adjacent one group or three pairs one group of disposable whole taking-ups of two couples with the many polycrystalline silicon rods 7 on the outmost turns annulus; Can also be by every adjacent one group or three pairs one group of disposable whole taking-ups of two couples with the many polycrystalline silicon rods 7 on the annulus of inferior outer ring; Can also be by every adjacent one group or three pairs one group of disposable whole taking-ups of two couples with the many polycrystalline silicon rods 7 on the inner ring annulus.
Embodiment 17, once can take out many polycrystalline silicon rods get the bar device subassembly, wherein: comprise that the different nexine of concentric radius cylindraceous gets that bar device 16, middle level are got bar device 15, skin is got bar device 14; The middle level is got bar device 15 and is positioned at skin and gets bar device 14 center; Nexine is got bar device 16 and is positioned at the middle level and gets bar device 15 center; Nexine gets that bar device 16, middle level are got bar device 15, skin is got bar device 14 tops and is fixed on the crossbeam 1 by corresponding active connection 2, the crossbeam 1 outer crane 8 that connects.All the other are with embodiment 12.
In order once to take out many polycrystalline silicon rods 7, special arrangements of the present utility modelly get excellent method and get bar device and get the subassembly of bar device.Be closely connected together by once taking out many polycrystalline silicon rods 7 between them.Meet principle of unity.
Though in the process that once can take out many polycrystalline silicon rods 7, relate to fracture and support, shift three big steps.But core of the present utility model is to support, shift.Fracture can be regarded the preparation work that once can take out many polycrystalline silicon rods 7 as.Because polycrystalline silicon rod 7 can adopt artificial one one the mode of knocking to rupture, also can adopt the impact hammer of horizontal or vertical mode of similar machinery control rapidly polycrystalline silicon rod 7 to be ruptured in order to increase work efficiency.
The utility model relates to be used to rupture the contact element 6 of usefulness can be to use manpower crowbar, use the fork of manpower, use the little hammer of manpower, use the impact hammer of mechanical means, use the handgrip of mechanical means, use the crowbar of mechanical means, use the fork of mechanical means.Because the fragile easy fracture of polycrystalline silicon rod 7 character, the contact element 6 of the above-mentioned usefulness that is used to rupture can make polycrystalline silicon rod 7 fractures, and the rupture contact element 6 of usefulness of other modes also may make polycrystalline silicon rod 7 fractures in addition.
The outside of the many polycrystalline silicon rods 7 that are positioned at polysilicon body of heater base plate to be removed such as for example a cavity 3 of getting bar device is covered on, will get the bar device location after, pass the hole on the wall 4 of getting bar device, use the crowbar of manpower that polycrystalline silicon rod 7 sleds are disconnected.
The outside of the many polycrystalline silicon rods 7 that are positioned at polysilicon body of heater base plate to be removed such as for example a cavity 3 of getting bar device is covered on, after will getting the bar device location, use horizontal impact hammer bump polycrystalline silicon rod 7, make many polycrystalline silicon rods of character fragility rupture, fall into the cavity 3 of getting bar device at the position that contacts with horizontal impact hammer.
The outside of the many polycrystalline silicon rods 7 that are positioned at polysilicon body of heater base plate to be removed such as for example a cavity 3 of getting bar device is covered on, after will getting the bar device location, underslung impact hammer is hung in the cavity 3 of getting bar device with mechanical arm, use underslung impact hammer bump polycrystalline silicon rod 7, make many polycrystalline silicon rods of character fragility rupture, fall into the cavity 3 of getting bar device at the position that contacts with underslung impact hammer.
Fracture can be considered as once taking out the preparation work of many polycrystalline silicon rods 7 after finishing and finish.The next step that enters then is: support.
In order to guarantee that post-rift polycrystalline silicon rod 7 can reasonable being retained in be got in the bar device, need the parts that can support post-rift polycrystalline silicon rod 7, we are provided with the contact element 6 that can support post-rift polycrystalline silicon rod 7 and just can realize this task getting the bar device bottom.
The contact element 6 that for example supports usefulness can be arranged on the removable bottom of getting the bar device bottom.Earlier removable bottom is accepted in order to avoid damaged in collision polycrystalline silicon rod 7, the outside of the many polycrystalline silicon rods 7 that are positioned at polysilicon body of heater base plate 12 to be removed such as again a cavity 3 of getting bar device is covered on, open removable bottom again, make removable bottom that cavity 3 and polysilicon body of heater base plate 12 is isolated, adopt certain mode to make many polycrystalline silicon rods 7 rupture again.Because removable bottom is isolated with cavity 3 and polysilicon body of heater base plate 12.Post-rift many polycrystalline silicon rods 7 fractures fall into cavity 3.Removable bottom can be finished the task of support.
The contact element 6 that for example supports usefulness can be arranged on the plug-in unit of getting the bar device bottom, and plug-in unit passes wall 4, can stop that also post-rift many polycrystalline silicon rods 7 break away from cavity 3.Plug-in unit also can be finished the task of support.
The contact element 6 that for example supports usefulness can be by mechanical arm from passing the mesh screen of cavity 3, mesh screen can be enclosed within on the polycrystalline silicon rod 7, mesh screen one end hangs over to be got on the bar device, mesh screen can be finished the task of support equally.
After support is finished.The next step that enters then is: shift.
Because post-rift many polycrystalline silicon rods 7 fractures fall into cavity 3, the encirclement of wall 4 is arranged, to get bar device by crane 8 again and upwards sling and break away from polysilicon body of heater base plate 12, perhaps mechanical arm will be got bar device and move up and break away from polysilicon body of heater base plate 12 by being looped around wall 4 outer clip devices.Can finish the task of the transfer of many polycrystalline silicon rods 7.
We it is emphasized that: can hold many polycrystalline silicon rods 7 in the cavity 3, the efficiency far of many polycrystalline silicon rods of so disposable transfer 7 is higher than the tranfer system of traditional single or polycrystalline silicon rod 7 that list is right.And the encirclement provide protection of wall 4 is arranged, and can avoid potential in traditional transfer process to scratch operative employee 18 hidden danger, also can avoid potential in the transfer process of traditional exposure formula to pollute the hidden danger of many polycrystalline silicon rods 7.
We it is emphasized that: the efficient of many polycrystalline silicon rods of disposable transfer 7 improves and the efficient raising of many polycrystalline silicon rods of disposable fracture 7 all is significant.But many polycrystalline silicon rods of disposable transfer 7 can independently be adopted respectively with many polycrystalline silicon rods of disposable fracture 7, mutually interferential technology not.
After the transfer task was finished, the next step that enters then was: the process of follow-up taking-up rod.
The bottom that bar device is directly aimed at the container of truck of getting of many polycrystalline silicon rods 7 for example can will be housed by crane 8, slowly open removable bottom, and allow many polycrystalline silicon rods 7 portable fall into the container of truck 20.Truck 20 is transported to many polycrystalline silicon rods 7 in the next workshop again.
The bottom that bar device is directly aimed at the container of truck of getting of many polycrystalline silicon rods 7 for example can will be housed by mechanical arm and clip device, open and get rod door 13, and manually many polycrystalline silicon rods 7 be taken out and are placed in the container of truck 20 from get rod door 13.Truck 20 is transported to many polycrystalline silicon rods 7 in the next workshop again.
The utility model can the skin that diameter is different gets that bar device 14, middle level are got bar device 15, nexine is got bar device 16 and is used in combination, and finishes the rod work of getting that all are positioned at the many polycrystalline silicon rods 7 on the polysilicon body of heater base plate 12 together.
Because the polycrystalline silicon furnace technology constantly develops, may occur fully and be distributed in skin, middle level, other different forms of three annulus of nexine.Other forms can be the many polycrystalline silicon rods 7 that square formation is arranged.But as long as adopt difform wall 4 to deacclimatize the many polycrystalline silicon rods 7 that square formation is arranged, and cooperate cavity 3 of the present utility model and the contact element 6 that supports usefulness, just can finish basic task of the present utility model.
Claims (8)
1, once can take out the bar device of getting of many polycrystalline silicon rods, it is characterized in that: get bar device and form around the cavity (3) that forms by wall (4) and wall (4); Get the bar device bottom and also be provided with the contact element (6) that can support post-rift polycrystalline silicon rod (7).
2, the bar device of getting that once can take out many polycrystalline silicon rods according to claim 1 is characterized in that: the contact element (6) that can support post-rift polycrystalline silicon rod (7) is arranged on the wall (4) of getting bar device.
3, the bar device of getting that once can take out many polycrystalline silicon rods according to claim 1 is characterized in that: get bar device and be provided with the web member (2) that can flexibly connect with crane (8).
4, the bar device of getting that once can take out many polycrystalline silicon rods according to claim 1 is characterized in that: get outside the wall (4) of bar device and be socketed with the clip device.
5, the bar device of getting that once can take out many polycrystalline silicon rods according to claim 1 is characterized in that: get rod door (13) and be installed on the wall (4) of getting bar device.
6, once can take out the bar device of getting of many polycrystalline silicon rods, it is characterized in that: comprise two concentric inner rings cylindraceous (10) and outer ring (11), connect blade (9) by some isolation between inner ring (10) and outer ring (11) and connect; Outer ring (11) and inner ring (10) are connected blade (9) and have formed the wall (4) of getting bar device with isolating, and wall (4) is around forming cavity (3), and the wall (4) of getting bar device can be by contact element (6) with polycrystalline silicon rod (7) and get bar device and be fixed together.
7, according to claim 6 once can take out many polycrystalline silicon rods get the bar device subassembly, it is characterized in that: comprise that the different nexine of concentric radius cylindraceous gets that bar device (16), middle level are got bar device (15), skin is got bar device (14); The middle level is got bar device (15) and is positioned at skin and gets bar device (14) center; Nexine is got bar device (16) and is positioned at the middle level and gets bar device (15) center.
8, according to claim 6 once can take out many polycrystalline silicon rods get the bar device subassembly, it is characterized in that: comprise that the different nexine of concentric radius cylindraceous gets that bar device (16), middle level are got bar device (15), skin is got bar device (14); The middle level is got bar device (15) and is positioned at skin and gets bar device (14) center; Nexine is got bar device (16) and is positioned at the middle level and gets bar device (15) center; Nexine gets that bar device (16), middle level are got bar device (15), skin is got bar device (14) top and is fixed on the crossbeam (1) by corresponding active connection (2), the outer crane (8) that connects of crossbeam (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201374295U CN201309980Y (en) | 2008-08-22 | 2008-08-22 | Rod taking device capable of taking out multiple polycrystalline silicon rods at one time and rod taking device assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201374295U CN201309980Y (en) | 2008-08-22 | 2008-08-22 | Rod taking device capable of taking out multiple polycrystalline silicon rods at one time and rod taking device assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201309980Y true CN201309980Y (en) | 2009-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008201374295U Expired - Lifetime CN201309980Y (en) | 2008-08-22 | 2008-08-22 | Rod taking device capable of taking out multiple polycrystalline silicon rods at one time and rod taking device assembly |
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| CN (1) | CN201309980Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101624724B (en) * | 2008-08-22 | 2012-07-25 | 江西赛维Ldk光伏硅科技有限公司 | Method, device and device assembly for taking out multiple polysilicon rods |
| CN103451722A (en) * | 2013-08-06 | 2013-12-18 | 浙江晶盛机电股份有限公司 | External continuous feeder capable of being shared by multiple coil bases |
| CN104003398A (en) * | 2014-06-11 | 2014-08-27 | 陕西天宏硅材料有限责任公司 | Pneumatic polycrystalline-silicon silicon rod taking system |
-
2008
- 2008-08-22 CN CNU2008201374295U patent/CN201309980Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101624724B (en) * | 2008-08-22 | 2012-07-25 | 江西赛维Ldk光伏硅科技有限公司 | Method, device and device assembly for taking out multiple polysilicon rods |
| CN103451722A (en) * | 2013-08-06 | 2013-12-18 | 浙江晶盛机电股份有限公司 | External continuous feeder capable of being shared by multiple coil bases |
| CN104003398A (en) * | 2014-06-11 | 2014-08-27 | 陕西天宏硅材料有限责任公司 | Pneumatic polycrystalline-silicon silicon rod taking system |
| CN104003398B (en) * | 2014-06-11 | 2016-04-06 | 陕西天宏硅材料有限责任公司 | It is a kind of that polysilicon rod is pneumatic gets bar system |
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Free format text: CORRECT: ADDRESS; FROM: 338000 LDK INDUSTRIAL PARK, NEW AND HIGH ECONOMIC DEVELOPMENT ZONE, XINYU CITY, JIANGXI PROVINCE TO: 338000 JIANGXI LDK PHOTOVOLTAIC SILICON TECHNOLOGY CO., LTD. (MAHONG BASE), XINYU CITY, JIANGXI PROVINCE |
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Effective date of registration: 20110225 Address after: 338000, Jiangxi, Jiangxi, Xinyu LDK LDK photovoltaic silicon technology Co., Ltd. (Ma Hong base) Patentee after: Jiangxi Saiwei LDK Photovoltaic Silicon Technology Co., Ltd. Address before: 338000 LDK Industrial Park, hi tech Development Zone, Jiangxi, Xinyu Patentee before: LDK Solar Co., Ltd. |
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