[go: up one dir, main page]

CN201259892Y - Light emitting diode chip packaging structure with embedded electrostatic protection function - Google Patents

Light emitting diode chip packaging structure with embedded electrostatic protection function Download PDF

Info

Publication number
CN201259892Y
CN201259892Y CNU2008201255811U CN200820125581U CN201259892Y CN 201259892 Y CN201259892 Y CN 201259892Y CN U2008201255811 U CNU2008201255811 U CN U2008201255811U CN 200820125581 U CN200820125581 U CN 200820125581U CN 201259892 Y CN201259892 Y CN 201259892Y
Authority
CN
China
Prior art keywords
unit
light
electrostatic protection
packaging
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNU2008201255811U
Other languages
Chinese (zh)
Inventor
汪秉龙
杨秉洲
陈佳雯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harvatek Corp
Original Assignee
Harvatek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvatek Corp filed Critical Harvatek Corp
Priority to CNU2008201255811U priority Critical patent/CN201259892Y/en
Application granted granted Critical
Publication of CN201259892Y publication Critical patent/CN201259892Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H10W72/5473
    • H10W90/756

Landscapes

  • Led Device Packages (AREA)

Abstract

A light emitting diode chip packaging structure with embedded electrostatic protection function comprises: the light-emitting device comprises a conductive unit, a first packaging unit, an electrostatic protection unit, a second packaging unit, a light-emitting unit and a third packaging unit. The conductive unit is provided with at least two conductive pins which are arranged adjacent to each other to form a concave space. The first packaging unit wraps a part of each conductive pin to generate an accommodating space communicated with the concave space, and the tail end of each conductive pin is exposed out of the packaging unit. The electrostatic protection unit is accommodated in the concave space and is electrically connected between the two conductive pins. The second packaging unit is accommodated in the concave space to cover the electrostatic protection unit. The light-emitting unit is accommodated in the accommodating space and is electrically connected between the two conductive pins. The third packaging unit is accommodated in the accommodating space to cover the light emitting unit.

Description

具有内埋式静电防护功能的发光二极管芯片封装结构 Light-emitting diode chip packaging structure with built-in electrostatic protection function

技术领域 technical field

本实用新型涉及一种发光二极管芯片封装结构,尤其涉及一种具有内埋式静电防护功能的发光二极管芯片封装结构。The utility model relates to a light-emitting diode chip packaging structure, in particular to a light-emitting diode chip packaging structure with a built-in electrostatic protection function.

背景技术 Background technique

请参阅图1所示,其为现有具有静电防护(Electro-Static Discharge,ESD)功能的发光二极管芯片封装结构的剖面示意图。由图中可知,现有的发光二极管芯片封装结构包括:一基底结构1、至少一设置于该基底结构1上端的发光二极管2、一静电防护装置3、及一荧光胶体4。Please refer to FIG. 1 , which is a schematic cross-sectional view of an existing light-emitting diode chip package structure with an Electro-Static Discharge (ESD) function. It can be seen from the figure that the existing LED chip packaging structure includes: a base structure 1 , at least one LED 2 disposed on the upper end of the base structure 1 , an electrostatic protection device 3 , and a fluorescent colloid 4 .

其中,该发光二极管2上端的正电极端21及负电极端22由两条导线WWherein, the positive electrode terminal 21 and the negative electrode terminal 22 at the upper end of the LED 2 are connected by two wires W

1以电性连接于该基底结构1的正电极端11及负电极端12。此外,该静电防护装置3也同样设置于该基底结构1上,并且该静电防护装置3的负电极端32直接电性连接于该基底结构1的正电极区域,而该静电防护装置3的正电极端31通过一导线W2以电性连接于该基底结构1的负电极端12。再者,该荧光胶体4覆盖于该发光二极管2及该静电防护装置3上端,以保护该发光二极管2及该静电防护装置3。1 is electrically connected to the positive electrode terminal 11 and the negative electrode terminal 12 of the base structure 1 . In addition, the electrostatic protection device 3 is also arranged on the base structure 1, and the negative electrode terminal 32 of the electrostatic protection device 3 is directly electrically connected to the positive electrode area of the base structure 1, and the positive electrode terminal 32 of the electrostatic protection device 3 The terminal 31 is electrically connected to the negative terminal 12 of the base structure 1 through a wire W2. Furthermore, the fluorescent colloid 4 covers the upper ends of the light emitting diode 2 and the static electricity protection device 3 to protect the light emitting diode 2 and the static electricity protection device 3 .

然而,上述现有具有静电防护功能的发光二极管芯片封装结构仍具有下列几项缺点:However, the above-mentioned existing light-emitting diode chip packaging structure with electrostatic protection function still has the following disadvantages:

1、因为该发光二极管2所处的位置过低,因此现有的结构无法有效地提升该发光二极管2的发光效能。1. Because the position of the light emitting diode 2 is too low, the existing structure cannot effectively improve the luminous efficiency of the light emitting diode 2 .

2、由于该静电防护装置3设置于该发光二极管2的邻近区域,因此该发光二极管2的发光效能会受到该静电防护装置3的影响。2. Since the static electricity protection device 3 is arranged in the vicinity of the light emitting diode 2 , the luminous efficiency of the light emitting diode 2 will be affected by the static electricity protection device 3 .

3、由于该静电防护装置3与该发光二极管2相邻地设置于该基底结构1的同一导电接脚上,因此该发光二极管2的散热效能会受到该静电防护装置3的影响。3. Since the ESD protection device 3 and the LED 2 are adjacently disposed on the same conductive pin of the base structure 1 , the heat dissipation performance of the LED 2 will be affected by the ESD protection device 3 .

发明内容 Contents of the invention

本实用新型所要解决的技术问题,在于提供一种具有内埋式静电防护功能的发光二极管芯片封装结构。本实用新型将一发光单元与一静电防护单元彼此分开(分层)设置,以避免该发光单元受到该静电防护单元的干扰。The technical problem to be solved by the utility model is to provide a light-emitting diode chip packaging structure with a built-in electrostatic protection function. In the utility model, a light-emitting unit and an electrostatic protection unit are arranged separately (layered) so as to prevent the light-emitting unit from being disturbed by the electrostatic protection unit.

此外,本实用新型的荧光材料没有直接接触到发光单元,因此本实用新型可避免因发光单元所产生的高温而降低荧光材料的发光效率。In addition, the fluorescent material of the present invention does not directly contact the light-emitting unit, so the present invention can avoid reducing the luminous efficiency of the fluorescent material due to the high temperature generated by the light-emitting unit.

再者,本实用新型的结构设计更适用于各种光源,诸如背光模块、装饰灯条、照明用灯、或是扫描仪光源等应用,皆为本实用新型所应用的范围与产品。Furthermore, the structural design of the present invention is more suitable for various light sources, such as backlight modules, decorative light strips, lighting lamps, or scanner light sources, etc., all of which are the scope and products of the present invention.

为了解决上述技术问题,根据本实用新型的其中一种方案,提供一种具有内埋式静电防护功能的发光二极管芯片封装结构,其包括:一导电单元、一第一封装单元、一静电防护单元、一第二封装单元、一发光单元、及一第三封装单元。其中,该导电单元具有至少两个导电接脚,并且该至少两个导电接脚彼此相邻排列以形成一凹陷空间。该第一封装单元包覆每一个导电接脚的一部分,以产生一与该凹陷空间相连通的容置空间,并使得每一个导电接脚的末端露出该第一封装单元。该静电防护单元容置于该凹陷空间内并电性连接于上述两个导电接脚之间。该第二封装单元容置于该凹陷空间内以覆盖该静电防护单元。该发光单元容置于该容置空间内并电性连接于上述两个导电接脚之间。该第三封装单元容置于该容置空间内以覆盖该发光单元。In order to solve the above technical problems, according to one of the proposals of the present utility model, a light emitting diode chip packaging structure with built-in electrostatic protection function is provided, which includes: a conductive unit, a first packaging unit, and an electrostatic protection unit , a second packaging unit, a light emitting unit, and a third packaging unit. Wherein, the conductive unit has at least two conductive pins, and the at least two conductive pins are arranged adjacent to each other to form a recessed space. The first package unit wraps a part of each conductive pin to create an accommodating space communicated with the recessed space, and makes the end of each conductive pin exposed to the first package unit. The electrostatic protection unit is accommodated in the recessed space and electrically connected between the two conductive pins. The second packaging unit is accommodated in the recessed space to cover the electrostatic protection unit. The light emitting unit is accommodated in the accommodating space and electrically connected between the two conductive pins. The third packaging unit is accommodated in the accommodating space to cover the light emitting unit.

再者,依据不同的需要,该第三封装单元可为下列不同的实施方式:Furthermore, according to different needs, the third packaging unit can be implemented in the following different ways:

1、第一实施方式:该第三封装单元为一透明材料。1. The first embodiment: the third packaging unit is a transparent material.

2、第二实施方式:该第三封装单元为一荧光材料,并且该荧光材料由硅胶与荧光粉混合而成或由环氧树脂与荧光粉混合而成。2. The second embodiment: the third packaging unit is a fluorescent material, and the fluorescent material is formed by mixing silica gel and fluorescent powder or epoxy resin and fluorescent powder.

3、第三实施方式:该第三封装单元具有一用于覆盖该发光单元的透明材料及一成形在该透明材料上的荧光材料。3. The third embodiment: the third packaging unit has a transparent material for covering the light emitting unit and a fluorescent material formed on the transparent material.

4、第四实施方式:该第三封装单元具有一用于覆盖该发光单元的荧光材料及一成形在该荧光材料上的透明材料。4. Embodiment 4: the third packaging unit has a fluorescent material for covering the light emitting unit and a transparent material formed on the fluorescent material.

因此,本实用新型具有内埋式静电防护功能的发光二极管芯片封装结构具有下列的优点:Therefore, the light-emitting diode chip packaging structure with built-in electrostatic protection function of the utility model has the following advantages:

1、因为该发光单元通过该第二封装单元的撑高,以使得该发光单元能处于一较高的位置。因此,本实用新型的结构可以有效地提升该发光单元的发光效能。1. Because the light-emitting unit is elevated by the second packaging unit, so that the light-emitting unit can be at a higher position. Therefore, the structure of the present invention can effectively improve the luminous efficiency of the luminous unit.

2、由于该静电防护单元与该发光单元彼此分开(分层)设置于不同的位置,因此该发光单元的发光效能不会受到该静电防护单元的影响。2. Since the static electricity protection unit and the light emitting unit are separated (layered) and arranged in different positions, the luminous efficiency of the light emitting unit will not be affected by the static electricity protection unit.

3、由于该静电防护单元与该发光单元彼此分开(分层)设置于不同的位置,因此该发光单元的散热效能不会受到该静电防护单元的影响。3. Since the static electricity protection unit and the light emitting unit are separated (layered) and arranged in different positions, the heat dissipation performance of the light emitting unit will not be affected by the static electricity protection unit.

4、于上述第三实施方式中,因为该第三封装单元由该透明材料及该荧光材料两层所组成,所以该荧光材料没有直接接触到该发光单元,因此本实用新型可避免因该发光单元所产生的高温而降低该荧光材料的发光效率。4. In the above-mentioned third embodiment, because the third packaging unit is composed of the transparent material and the fluorescent material, the fluorescent material does not directly contact the light-emitting unit, so the utility model can avoid The high temperature generated by the unit reduces the luminous efficiency of the fluorescent material.

5、于上述第四实施方式中,通过该透明材料的使用,一方面可减少该荧光材料的使用量,另外一面可由该透明材料位于最上层来保护该荧光材料,以达到免受外力的破坏的优点。5. In the above fourth embodiment, through the use of the transparent material, on the one hand, the amount of the fluorescent material used can be reduced, and on the other hand, the transparent material can be placed on the uppermost layer to protect the fluorescent material, so as to avoid damage from external forces The advantages.

以下结合附图和具体实施例对本实用新型进行详细描述,但不作为对本实用新型的限定。The utility model will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the utility model.

附图说明 Description of drawings

图1为现有具有静电防护功能的发光二极管芯片封装结构的剖面示意图;1 is a schematic cross-sectional view of an existing light-emitting diode chip package structure with electrostatic protection function;

图2A至图2E分别为本实用新型具有内埋式静电防护功能的发光二极管芯片封装结构的第一实施例的封装流程立体示意图;Fig. 2A to Fig. 2E are three-dimensional schematic diagrams of the packaging process of the first embodiment of the light-emitting diode chip packaging structure with built-in electrostatic protection function of the present invention;

图3为本实用新型具有内埋式静电防护功能的发光二极管芯片封装结构的第二实施例的剖面示意图;Fig. 3 is a schematic cross-sectional view of the second embodiment of the light-emitting diode chip packaging structure with built-in electrostatic protection function of the present invention;

图4为本实用新型具有内埋式静电防护功能的发光二极管芯片封装结构的第三实施例的剖面示意图;Fig. 4 is a schematic cross-sectional view of the third embodiment of the light-emitting diode chip packaging structure with built-in electrostatic protection function of the present invention;

图5为本实用新型具有内埋式静电防护功能的发光二极管芯片封装结构的第四实施例的剖面示意图;以及5 is a schematic cross-sectional view of a fourth embodiment of the light-emitting diode chip packaging structure with built-in electrostatic protection function of the present invention; and

图6为本实用新型具有内埋式静电防护功能的发光二极管芯片封装结构的第五实施例的剖面示意图。FIG. 6 is a schematic cross-sectional view of a fifth embodiment of the LED chip packaging structure with built-in electrostatic protection function of the present invention.

其中,附图标记Among them, reference signs

1   基底结构        11    正电极端1 Base structure 11 Positive electrode terminal

12  负电极端12 negative terminal

2   发光二极管      21    正电极端2 Light-emitting diode 21 Positive terminal

22   负电极端22 Negative terminal

3    静电防护装置      31   正电极端3 ESD protection device 31 Positive electrode terminal

32   负电极端32 Negative terminal

4    荧光胶体4 fluorescent colloid

W1、W2导线W1, W2 wire

(第一实施例)(first embodiment)

1a  导电单元           10a  导电接脚1a Conductive unit 10a Conductive pin

100a 凹陷空间100a sunken space

101a 延伸部101a extension

102a 弯折部102a Bending part

2a  第一封装单元        200a 容置空间2a The first package unit 200a Accommodating space

3a  静电防护单元3a ESD protection unit

4a  第二封装单元4a Second package unit

5a  发光单元5a Lighting unit

6a  第三封装单元6a The third package unit

W1a、W2a 导线W1a, W2a wire

(第二实施例)(second embodiment)

1b   导电单元        10b  导电接脚1b Conductive unit 10b Conductive pin

2b   第一封装单元2b The first packaging unit

3b   静电防护单元3b ESD protection unit

4b   第二封装单元4b second packaging unit

5b   发光单元5b Lighting unit

6b   第三封装单元6b The third package unit

W1b、W2b 导线W1b, W2b wire

(第三实施例)(third embodiment)

6c   第三封装单元6c The third package unit

(第四实施例)(fourth embodiment)

5d   发光单元5d light emitting unit

6d   第三封装单元      60d  透明材料6d third packaging unit 60d transparent material

61d  荧光材料61d fluorescent material

(第四实施例)(fourth embodiment)

5e   发光单元5e Lighting unit

6e   第三封装单元    60e   透明材料6e third packaging unit 60e transparent material

61e  荧光材料61e fluorescent material

具体实施方式 Detailed ways

请参阅图2A至图2E所示,本实用新型第一实施例的发光二极管芯片封装结构的制作方法包括下列步骤:Please refer to FIG. 2A to FIG. 2E , the manufacturing method of the light emitting diode chip packaging structure in the first embodiment of the present invention includes the following steps:

请参阅图2A所示,提供一导电单元1a,其具有至少两个导电接脚10a,并且该至少两个导电接脚10a彼此相邻排列以形成一凹陷空间100a。其中,每一个导电接脚10a具有一延伸部101a及一由该延伸部101a向下弯折的弯折部102a,并且该等弯折部102a彼此相邻排列以形成该凹陷空间100a。Referring to FIG. 2A , a conductive unit 1a is provided, which has at least two conductive pins 10a, and the at least two conductive pins 10a are arranged adjacent to each other to form a recessed space 100a. Each conductive pin 10a has an extension portion 101a and a bent portion 102a bent downward from the extension portion 101a, and the bent portions 102a are arranged adjacent to each other to form the recessed space 100a.

请参阅图2A所示,将一第一封装单元2a包覆每一个导电接脚10a的一部分,以产生一与该凹陷空间100a相连通的容置空间200a,并使得每一个导电接脚10a的末端露出该第一封装单元2a。换言之,每一个延伸部101a的一端外露于该第一封装单元2a的外部,并且该第一封装单元2a为一不透光材料。Please refer to FIG. 2A , a first packaging unit 2a is used to cover a part of each conductive pin 10a to produce an accommodating space 200a connected with the recessed space 100a, and to make each conductive pin 10a The end exposes the first packaging unit 2a. In other words, one end of each extension portion 101a is exposed outside the first packaging unit 2a, and the first packaging unit 2a is made of an opaque material.

请参阅图2B所示,将一静电防护单元3a容置于该凹陷空间100a内并电性连接于上述两个导电接脚10a之间。以本实用新型第一实施例而言,该静电防护单元3a电性地设置于其中一导电接脚10a上,并且该静电防护单元3a通过一导线W1a而电性连接于另外一导电接脚10a。Referring to FIG. 2B , an ESD protection unit 3 a is accommodated in the recessed space 100 a and electrically connected between the two conductive pins 10 a. According to the first embodiment of the present utility model, the ESD protection unit 3a is electrically disposed on one of the conductive pins 10a, and the ESD protection unit 3a is electrically connected to the other conductive pin 10a through a wire W1a .

请参阅图2C所示,将一第二封装单元4a容置于该凹陷空间100a内以覆盖该静电防护单元3a,其中该第二封装单元4a可为一具有光反射物质的封装材料,例如:该光反射物质可为高反射材料或全反射材料。2C, a second packaging unit 4a is accommodated in the recessed space 100a to cover the electrostatic protection unit 3a, wherein the second packaging unit 4a can be a packaging material with a light-reflecting substance, for example: The light reflective material can be high reflective material or total reflective material.

请参阅图2D所示,将一发光单元5a容置于该容置空间200a内并电性连接于上述两个导电接脚10a之间,其中该发光单元5a可为一发光二极管,并且该发光单元5a设置于该第二封装单元4a上,而且该发光单元5a通过两条导线W2a以分别电性连接于上述两个导电接脚10a。再者,该发光单元5a可通过该第二封装单元4a的高反射性质,以达到高反射的效果。此外,通过该第二封装单元4a的撑高,以使得该发光单元5a能处于一较高的位置,因此本实用新型的结构可以有效地提升该发光单元的发光效能。另外,由于该静电防护单元3a与该发光单元5a彼此分开(分层)设置于不同的位置,因此该发光单元5a的发光效能及散热效能不会受到该静电防护单元3a的影响。Please refer to FIG. 2D, a light emitting unit 5a is accommodated in the accommodating space 200a and electrically connected between the two conductive pins 10a, wherein the light emitting unit 5a can be a light emitting diode, and the light emitting The unit 5a is disposed on the second packaging unit 4a, and the light emitting unit 5a is electrically connected to the two conductive pins 10a respectively through two wires W2a. Furthermore, the light emitting unit 5a can achieve a high reflection effect through the high reflection property of the second packaging unit 4a. In addition, the light-emitting unit 5a can be placed at a higher position through the heightening of the second packaging unit 4a, so the structure of the present invention can effectively improve the light-emitting efficiency of the light-emitting unit. In addition, since the static electricity protection unit 3a and the light emitting unit 5a are separated (layered) and arranged in different positions, the light emitting performance and heat dissipation performance of the light emitting unit 5a will not be affected by the static electricity protection unit 3a.

请参阅图2E所示,将一第三封装单元6a容置于该容置空间200a内以覆盖该发光单元5a。以本实用新型第一实施例而言,该第三封装单元6a可为一透明材料。Referring to FIG. 2E , a third packaging unit 6 a is accommodated in the accommodation space 200 a to cover the light emitting unit 5 a. According to the first embodiment of the present invention, the third packaging unit 6a can be a transparent material.

因此,如图2E所示,本实用新型第一实施例提供一种具有内埋式静电防护功能的发光二极管芯片封装结构,其包括:一导电单元1a、一第一封装单元2a、一静电防护单元3a、一第二封装单元4a、一发光单元5a、及一第三封装单元6a。Therefore, as shown in Figure 2E, the first embodiment of the present utility model provides a light-emitting diode chip packaging structure with built-in electrostatic protection function, which includes: a conductive unit 1a, a first packaging unit 2a, an electrostatic protection Unit 3a, a second packaging unit 4a, a light emitting unit 5a, and a third packaging unit 6a.

其中,该导电单元1a具有至少两个导电接脚10a,并且该至少两个导电接脚10a彼此相邻排列以形成一凹陷空间100a。该第一封装单元2a包覆每一个导电接脚10a的一部分,以产生一与该凹陷空间100a相连通的容置空间200a,并使得每一个导电接脚10a的末端露出该第一封装单元2a。该静电防护单元3a容置于该凹陷空间100a内(容置于上述至少两个导电接脚10a之间)并电性连接于上述两个导电接脚10a之间。该第二封装单元4a容置于该凹陷空间100a内(容置于上述至少两个导电接脚10a之间)以覆盖该静电防护单元3a。该发光单元5a容置于该容置空间200a内并电性连接于上述两个导电接脚10a之间。该第三封装单元6a容置于该容置空间200a内以覆盖该发光单元5a。Wherein, the conductive unit 1a has at least two conductive pins 10a, and the at least two conductive pins 10a are arranged adjacent to each other to form a recessed space 100a. The first packaging unit 2a wraps a part of each conductive pin 10a to form an accommodating space 200a communicating with the recessed space 100a, and makes the end of each conductive pin 10a expose the first packaging unit 2a . The ESD protection unit 3a is accommodated in the recessed space 100a (accommodated between the at least two conductive pins 10a) and electrically connected between the two conductive pins 10a. The second packaging unit 4a is accommodated in the recessed space 100a (arranged between the at least two conductive pins 10a) to cover the ESD protection unit 3a. The light emitting unit 5a is accommodated in the accommodating space 200a and electrically connected between the two conductive pins 10a. The third packaging unit 6a is accommodated in the accommodating space 200a to cover the light emitting unit 5a.

请参阅图3所示,其为本实用新型具有内埋式静电防护功能的发光二极管芯片封装结构的第二实施例的剖面示意图。由图中可知,本实用新型第二实施例提供一种具有内埋式静电防护功能的发光二极管芯片封装结构,其包括:一导电单元1b、一第一封装单元2b、一静电防护单元3b、一第二封装单元4b、一发光单元5b、及一第三封装单元6b。此外,本实用新型第二实施例与第一实施例最大的差别在于:在第二实施例中,该静电防护单元3b设置于该第一封装单元2b上,因此该静电防护单元3b通过两条导线W1b以分别电性连接于两个导电接脚10b。再者,该发光单元5b通过一条导线W2b以电性地设置于其中一导电接脚10b上,并且该发光单元5b通过另一条导线W2b以电性连接于另外一导电接脚10b。Please refer to FIG. 3 , which is a schematic cross-sectional view of a second embodiment of the LED chip package structure with built-in electrostatic protection function of the present invention. As can be seen from the figure, the second embodiment of the present invention provides a light-emitting diode chip packaging structure with built-in electrostatic protection function, which includes: a conductive unit 1b, a first packaging unit 2b, an electrostatic protection unit 3b, A second packaging unit 4b, a light emitting unit 5b, and a third packaging unit 6b. In addition, the biggest difference between the second embodiment of the utility model and the first embodiment is that in the second embodiment, the static electricity protection unit 3b is arranged on the first packaging unit 2b, so the static electricity protection unit 3b passes two The wire W1b is electrically connected to the two conductive pins 10b respectively. Moreover, the light emitting unit 5b is electrically disposed on one of the conductive pins 10b through a wire W2b, and the light emitting unit 5b is electrically connected to the other conductive pin 10b through another wire W2b.

请参阅图4所示,其为本实用新型具有内埋式静电防护功能的发光二极管芯片封装结构的第三实施例的剖面示意图。由图中可知,本实用新型第三实施例与第一实施例最大的差别在于:在第三实施例中,一第三封装单元6c为一荧光材料,并且该荧光材料可由硅胶与荧光粉混合而成或由环氧树脂与荧光粉混合而成。Please refer to FIG. 4 , which is a schematic cross-sectional view of a third embodiment of the LED chip packaging structure with built-in electrostatic protection function of the present invention. As can be seen from the figure, the biggest difference between the third embodiment of the present invention and the first embodiment is that in the third embodiment, a third packaging unit 6c is a fluorescent material, and the fluorescent material can be mixed with silica gel and fluorescent powder Made or mixed with epoxy resin and phosphor.

请参阅图5所示,其为本实用新型具有内埋式静电防护功能的发光二极管芯片封装结构的第四实施例的剖面示意图。由图中可知,本实用新型第四实施例与第一实施例最大的差别在于:在第四实施例中,一第三封装单元6d具有一用于覆盖一发光单元5d的透明材料60d及一成形在该透明材料60d上的荧光材料61d。因此,因为该第三封装单元6d由该透明材料60d及该荧光材料61d两层所组成,所以该荧光材料61d没有直接接触到该发光单元5d,因此本实用新型可避免因该发光单元5d所产生的高温而降低该荧光材料61d的发光效率。Please refer to FIG. 5 , which is a schematic cross-sectional view of a fourth embodiment of the LED chip package structure with built-in electrostatic protection function of the present invention. It can be seen from the figure that the biggest difference between the fourth embodiment of the present invention and the first embodiment is that in the fourth embodiment, a third packaging unit 6d has a transparent material 60d for covering a light emitting unit 5d and a A fluorescent material 61d formed on the transparent material 60d. Therefore, because the third encapsulation unit 6d is composed of two layers of the transparent material 60d and the fluorescent material 61d, the fluorescent material 61d does not directly contact the light-emitting unit 5d, so the present invention can avoid the problem caused by the light-emitting unit 5d The resulting high temperature reduces the luminous efficiency of the fluorescent material 61d.

请参阅图6所示,其为本实用新型具有内埋式静电防护功能的发光二极管芯片封装结构的第五实施例的剖面示意图。由图中可知,本实用新型第五实施例与第一实施例最大的差别在于:在第五实施例中,一第三封装单元6e具有一用于覆盖一发光单元5e的荧光材料61e及一成形在该荧光材料61e上的透明材料60e。因此,于第五实施例中,通过该透明材料60e的使用,一方面可减少该荧光材料61e的使用量,另外一面可由该透明材料60e位于最上层来保护该荧光材料61e,以达到免受外力的破坏的优点。Please refer to FIG. 6 , which is a schematic cross-sectional view of a fifth embodiment of the LED chip packaging structure with built-in electrostatic protection function of the present invention. It can be seen from the figure that the biggest difference between the fifth embodiment of the present invention and the first embodiment is that in the fifth embodiment, a third packaging unit 6e has a fluorescent material 61e for covering a light emitting unit 5e and a A transparent material 60e formed on the fluorescent material 61e. Therefore, in the fifth embodiment, through the use of the transparent material 60e, the usage amount of the fluorescent material 61e can be reduced on the one hand, and on the other hand, the fluorescent material 61e can be protected by the transparent material 60e on the uppermost layer, so as to avoid Advantages of destruction by external force.

综上所述,本实用新型将一发光单元与一静电防护单元彼此分开(分层)设置,以避免该发光单元受到该静电防护单元的干扰。因此,本实用新型具有内埋式静电防护功能的发光二极管芯片封装结构具有下列的优点:To sum up, in the present invention, a light-emitting unit and an electrostatic protection unit are arranged separately (layered) to prevent the light-emitting unit from being disturbed by the electrostatic protection unit. Therefore, the light-emitting diode chip packaging structure with built-in electrostatic protection function of the utility model has the following advantages:

1、因为该发光单元通过该第二封装单元的撑高,以使得该发光单元能处于一较高的位置。因此,本实用新型的结构可以有效地提升该发光单元的发光效能。1. Because the light-emitting unit is elevated by the second packaging unit, so that the light-emitting unit can be at a higher position. Therefore, the structure of the present invention can effectively improve the luminous efficiency of the luminous unit.

2、由于该静电防护单元与该发光单元彼此分开(分层)设置于不同的位置,因此该发光单元的发光效能不会受到该静电防护单元的影响。2. Since the static electricity protection unit and the light emitting unit are separated (layered) and arranged in different positions, the luminous efficiency of the light emitting unit will not be affected by the static electricity protection unit.

3、由于该静电防护单元与该发光单元彼此分开(分层)设置于不同的位置,因此该发光单元的散热效能不会受到该静电防护单元的影响。3. Since the static electricity protection unit and the light emitting unit are separated (layered) and arranged in different positions, the heat dissipation performance of the light emitting unit will not be affected by the static electricity protection unit.

4、于上述第四实施例中,因为该第三封装单元6d由该透明材料60d及该荧光材料61d两层所组成,所以该荧光材料61d没有直接接触到发光单元5d,因此本实用新型可避免因发光单元5d所产生的高温而降低荧光材料61d的发光效率。4. In the above fourth embodiment, because the third packaging unit 6d is composed of two layers of the transparent material 60d and the fluorescent material 61d, the fluorescent material 61d does not directly contact the light emitting unit 5d, so the utility model can Avoid reducing the luminous efficiency of the fluorescent material 61d due to the high temperature generated by the luminous unit 5d.

5、于上述第五实施例中,通过该透明材料60e的使用,一方面可减少该荧光材料61e的使用量,另外一面可由该透明材料60e位于最上层来保护该荧光材料61e,以达到免受外力的破坏的优点。5. In the above-mentioned fifth embodiment, through the use of the transparent material 60e, on the one hand, the usage amount of the fluorescent material 61e can be reduced, and on the other hand, the transparent material 60e can be located on the uppermost layer to protect the fluorescent material 61e, so as to avoid The advantage of being damaged by external forces.

当然,本实用新型还可有其它多种实施例,在不背离本实用新型精神及其实质的情况下,熟悉本领域的技术人员当可根据本实用新型作出各种相应的改变和变形,但这些相应的改变和变形都应属于本实用新型所附的权利要求的保护范围。Of course, the utility model can also have other various embodiments, and those skilled in the art can make various corresponding changes and deformations according to the utility model without departing from the spirit and essence of the utility model, but These corresponding changes and deformations should all belong to the protection scope of the appended claims of the present utility model.

Claims (9)

1、一种具有内埋式静电防护功能的发光二极管芯片封装结构,其特征在于,包括:1. A light-emitting diode chip packaging structure with built-in electrostatic protection function, characterized in that it includes: 一导电单元,其具有至少两个彼此相邻排列的导电接脚;a conductive unit having at least two conductive pins arranged adjacent to each other; 一第一封装单元,其包覆每一个导电接脚的一部分,以产生一容置空间,并使得每一个导电接脚的末端露出该第一封装单元;A first packaging unit, which covers a part of each conductive pin to create an accommodating space, and makes the end of each conductive pin expose the first packaging unit; 一静电防护单元,其容置于上述至少两个导电接脚之间并电性连接于上述两个导电接脚之间;An electrostatic protection unit, which is accommodated between the at least two conductive pins and is electrically connected between the two conductive pins; 一第二封装单元,其容置于上述至少两个导电接脚之间以覆盖该静电防护单元;A second packaging unit, which is accommodated between the at least two conductive pins to cover the electrostatic protection unit; 一发光单元,其容置于该容置空间内并电性连接于上述两个导电接脚之间;以及a light-emitting unit, which is accommodated in the accommodation space and electrically connected between the two conductive pins; and 一第三封装单元,其容置于该容置空间内以覆盖该发光单元。A third packaging unit is accommodated in the accommodating space to cover the light emitting unit. 2、根据权利要求1所述的具有内埋式静电防护功能的发光二极管芯片封装结构,其特征在于:该至少两个导电接脚彼此相邻排列以形成一凹陷空间,该凹陷空间相连通于该容置空间,并且该静电防护单元及该第二封装单元皆容置于该凹陷空间内。2. The light-emitting diode chip packaging structure with built-in electrostatic protection function according to claim 1, characterized in that: the at least two conductive pins are arranged adjacent to each other to form a recessed space, and the recessed space is connected to The accommodating space, the electrostatic protection unit and the second packaging unit are all accommodated in the recessed space. 3、根据权利要求2所述的具有内埋式静电防护功能的发光二极管芯片封装结构,其特征在于:每一个导电接脚具有一延伸部及一由该延伸部向下弯折的弯折部,该延伸部的一端外露于该第一封装单元的外部,并且该等弯折部彼此相邻排列以形成该凹陷空间。3. The light-emitting diode chip packaging structure with built-in electrostatic protection function according to claim 2, wherein each conductive pin has an extension part and a bending part bent downward from the extension part , one end of the extension part is exposed outside the first packaging unit, and the bent parts are arranged adjacent to each other to form the recessed space. 4、根据权利要求1所述的具有内埋式静电防护功能的发光二极管芯片封装结构,其特征在于:该静电防护单元电性地设置于其中一导电接脚上或设置于该第一封装单元上。4. The light-emitting diode chip packaging structure with built-in electrostatic protection function according to claim 1, characterized in that: the electrostatic protection unit is electrically disposed on one of the conductive pins or disposed on the first packaging unit superior. 5、根据权利要求1所述的具有内埋式静电防护功能的发光二极管芯片封装结构,其特征在于:该发光单元电性地设置于其中一导电接脚上或设置于该第二封装单元上。5. The light-emitting diode chip packaging structure with built-in electrostatic protection function according to claim 1, characterized in that: the light-emitting unit is electrically disposed on one of the conductive pins or on the second packaging unit . 6、根据权利要求1所述的具有内埋式静电防护功能的发光二极管芯片封装结构,其特征在于:该第一封装单元为一不透光材料,并且该第二封装单元为一具有光反射物质的封装材料。6. The light-emitting diode chip packaging structure with built-in electrostatic protection function according to claim 1, characterized in that: the first packaging unit is an opaque material, and the second packaging unit is a light-reflecting The encapsulating material of the substance. 7、根据权利要求1所述的具有内埋式静电防护功能的发光二极管芯片封装结构,其特征在于:该第三封装单元为一透明材料或一荧光材料,并且该荧光材料由硅胶与荧光粉混合而成或由环氧树脂与荧光粉混合而成。7. The light-emitting diode chip packaging structure with built-in electrostatic protection function according to claim 1, characterized in that: the third packaging unit is a transparent material or a fluorescent material, and the fluorescent material is made of silica gel and fluorescent powder Mixed or mixed with epoxy resin and phosphor. 8、根据权利要求1所述的具有内埋式静电防护功能的发光二极管芯片封装结构,其特征在于:该第三封装单元具有一用于覆盖该发光单元的透明材料及一成形在该透明材料上的荧光材料。8. The light-emitting diode chip packaging structure with built-in electrostatic protection function according to claim 1, characterized in that: the third packaging unit has a transparent material for covering the light-emitting unit and a transparent material formed on the transparent material on the fluorescent material. 9、根据权利要求1所述的具有内埋式静电防护功能的发光二极管芯片封装结构,其特征在于:该第三封装单元具有一用于覆盖该发光单元的荧光材料及一成形在该荧光材料上的透明材料。9. The light-emitting diode chip packaging structure with built-in electrostatic protection function according to claim 1, characterized in that: the third packaging unit has a fluorescent material for covering the light-emitting unit and a fluorescent material formed on the fluorescent material on transparent material.
CNU2008201255811U 2008-08-14 2008-08-14 Light emitting diode chip packaging structure with embedded electrostatic protection function Expired - Fee Related CN201259892Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2008201255811U CN201259892Y (en) 2008-08-14 2008-08-14 Light emitting diode chip packaging structure with embedded electrostatic protection function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2008201255811U CN201259892Y (en) 2008-08-14 2008-08-14 Light emitting diode chip packaging structure with embedded electrostatic protection function

Publications (1)

Publication Number Publication Date
CN201259892Y true CN201259892Y (en) 2009-06-17

Family

ID=40774128

Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2008201255811U Expired - Fee Related CN201259892Y (en) 2008-08-14 2008-08-14 Light emitting diode chip packaging structure with embedded electrostatic protection function

Country Status (1)

Country Link
CN (1) CN201259892Y (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102054829A (en) * 2010-11-05 2011-05-11 深圳市华星光电技术有限公司 Encapsulation structure of LED
CN102130273A (en) * 2010-12-10 2011-07-20 深圳市华星光电技术有限公司 Light emitting diode packaging structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102054829A (en) * 2010-11-05 2011-05-11 深圳市华星光电技术有限公司 Encapsulation structure of LED
CN102130273A (en) * 2010-12-10 2011-07-20 深圳市华星光电技术有限公司 Light emitting diode packaging structure

Similar Documents

Publication Publication Date Title
CN102738367B (en) Luminaire
TWI384649B (en) Light emitting diode chip encapsulation structure with embedded electrostatic protection function and its making method
CN104517947A (en) Light emitting diode assembly and manufacturing method
JP2011249807A (en) Light emitting device and light unit including the same
US20110175134A1 (en) Package structure and led package structure
KR20150092423A (en) Light emitting device package
WO2016093325A1 (en) Light emitting device
KR20130098048A (en) Light emitting device package
US8791482B2 (en) Light emitting device package
CN201259892Y (en) Light emitting diode chip packaging structure with embedded electrostatic protection function
US9257620B1 (en) Package structure of light-emitting diode module and method for manufacturing the same
CN101814570A (en) Light emitting device package and method for fabricating the same
CN103904204A (en) Light-emitting diode light bar
CN101924099B (en) LED device
CN101630679A (en) Light-emitting chip packaging structure with embedded electrostatic protection function and manufacturing method thereof
CN102052578A (en) Light emitting device
CN104124320B (en) Light emitting diode
CN103367343A (en) Light emitting module
CN201439894U (en) Luminous module capable of being spliced randomly to generate area light source with preset shape
CN201503861U (en) Light emitting diode packaging structure capable of lighting light source in partition mode
TWI713236B (en) Light-emitting diode assembly and manufacturing method thereof
CN109712967B (en) A light-emitting diode device and its manufacturing method
CN100449753C (en) Light-emitting diode packaging structure
CN101452922B (en) Light emitting unit
CN201663161U (en) Light emitting diode packaging structure

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090617

Termination date: 20120814