CN201229937Y - Flip chip packaging structure with non-array bumps - Google Patents
Flip chip packaging structure with non-array bumps Download PDFInfo
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- CN201229937Y CN201229937Y CN200820127602.3U CN200820127602U CN201229937Y CN 201229937 Y CN201229937 Y CN 201229937Y CN 200820127602 U CN200820127602 U CN 200820127602U CN 201229937 Y CN201229937 Y CN 201229937Y
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Abstract
Description
技术领域 technical field
本实用新型有关于一种半导体装置,特别有关于一种具有非阵列凸块的倒装芯片封装结构。The utility model relates to a semiconductor device, in particular to a flip-chip packaging structure with non-array bumps.
背景技术 Background technique
目前,在以往的半导体封装结构内部由芯片至基板的电性连接方式可区分为倒装焊接(Flip Chip Bond)与丝焊(Wire Bond)两大类。丝焊是以芯片主动面朝上(远离基板)的形式设置于基板,并借由焊线使芯片电性连接至基板,芯片可供焊线接合的电极(或称为焊垫)是呈非阵列配置,例如位于芯片主动面的周边区域或中央区域。公知的窗口型球栅阵列(wBGA)封装结构所使用的芯片便具有位于芯片主动面中央的电极。另一方面,倒装焊接是预先在芯片主动面设置凸块,以芯片主动面翻转(朝向基板)的形式设置于基板,并借由凸块电性连接至基板。由于凸块提供芯片与基板之间一种较短的电性连接路径,可使芯片内更高工作频率的集成电路具有良好的高频信号的传输质量。因此,倒装焊接是先进半导体装置的必然发展趋势,工作频率愈来愈高的芯片不会受限于焊线长度的封装瓶颈而能求得更快的处理速度与更高的效能。At present, the electrical connection methods from the chip to the substrate in the past semiconductor packaging structure can be divided into two categories: Flip Chip Bond and Wire Bond. Wire bonding is to set the chip on the substrate in the form of the active face up (away from the substrate), and to connect the chip to the substrate electrically through the bonding wire. The array configuration, for example, is located in the peripheral area or the central area of the active surface of the chip. The chip used in the known window ball grid array (wBGA) package structure has an electrode located in the center of the active surface of the chip. On the other hand, in flip-chip bonding, bumps are provided on the active surface of the chip in advance, and the active surface of the chip is turned over (towards the substrate) and placed on the substrate, and are electrically connected to the substrate through the bumps. Since the bump provides a short electrical connection path between the chip and the substrate, the integrated circuit with a higher operating frequency in the chip can have good high-frequency signal transmission quality. Therefore, flip-chip bonding is an inevitable development trend of advanced semiconductor devices. Chips with higher and higher operating frequencies will not be limited by the packaging bottleneck of the length of the bonding wire, and can achieve faster processing speed and higher performance.
在倒装焊接过程中,凸块必须呈阵列配置,否则芯片无法获得均匀而良好的支撑,导致芯片倾斜问题。因此,即使芯片的电性功能相同,例如存储器,但根据丝焊与倒装焊接的用途不同,芯片便会有所不同。换言之,公知丝焊的芯片无法进行倒装焊接,通常公知倒装焊接的芯片需另外进行重分配线路(RDL)工艺,以产生阵列配置并可供设置凸块的凸块下金属承座(UBM pad)。然而在丝焊到倒装焊接的转换过程,有人尝试沿用公知丝焊的芯片加以制作为倒装焊接的封装形态,即具有非阵列凸块的倒装芯片封装结构,以使芯片具有共用性。如能采用丝焊的芯片,则可省略重分配线路(RDL)工艺的时间与材料成本、缩短产品研发时间,极具降低制造成本的潜力。During the flip-chip soldering process, the bumps must be arranged in an array, otherwise the chip cannot be supported evenly and well, resulting in chip tilting problems. Therefore, even though the electrical function of the chip is the same, such as memory, the chip will be different according to the purpose of wire bonding and flip chip bonding. In other words, known wire-bonded chips cannot be flip-chip-bonded, and conventionally-known flip-chip-bonded chips need additional redistribution line (RDL) process to generate an array configuration and provide an under-bump metal socket (UBM) for setting bumps. pad). However, in the conversion process from wire bonding to flip chip bonding, some people try to use the known wire bonding chip to make a flip chip package, that is, a flip chip package structure with non-array bumps, so as to make the chip common. If wire-bonded chips can be used, the time and material costs of the redistribution line (RDL) process can be omitted, product development time can be shortened, and there is great potential to reduce manufacturing costs.
请参阅图1所示,一种公知的具有非阵列凸块的倒装芯片封装结构100包含基板110、丝焊的芯片120、封胶体150以及两个或两个以上外接端子170。该基板110具有上表面111、下表面112以及两个或两个以上形成在该上表面111的接合垫113。该芯片120设置于该基板110的该上表面111并具有两个或两个以上打线形成的结线凸块(Stud Bump)122,该凸块122为非阵列配置并以钉头凸点焊接(SBB,Stud Bump Bonding)方式接合至该接合垫113。例如当该芯片120原为适用于窗口型球栅阵列封装的应用,该凸块122则位于该芯片120的中央区域。该封胶体150压模形成在该基板110的该上表面111并密封该芯片120。该外接端子170设置于该基板110的该下表面112。请参阅图2所示,该倒装芯片封装结构100的制造方法包含以下步骤:步骤1,提供基板;步骤2,倒装焊接;步骤3,封胶;以及步骤4,设置外接端子。在步骤2中,该芯片120无支撑点,仅以该芯片120中央区域的该凸块122接合至该基板110的该接合垫113,无法控制该芯片120与该基板110的平行度与间隙。在“封胶”的步骤3中,形成该封胶体150的模流压力冲击该芯片120而易于发生如同跷跷板般上下摆动的情况(如图1所示),造成该芯片120倾斜压触该基板110的线路或是该凸块122的焊点断裂,进而影响电性连接质量。并且,在步骤3中,缺乏周边支撑力的该芯片120也容易受到模流的影响而产生倾斜。而该外接端子170则是在步骤4中进行设置。Please refer to FIG. 1 , a conventional flip-chip packaging structure 100 with non-array bumps includes a substrate 110 , a wire-bonded chip 120 , an encapsulant 150 and two or more external terminals 170 . The substrate 110 has an upper surface 111 , a lower surface 112 and two or more bonding pads 113 formed on the upper surface 111 . The chip 120 is arranged on the upper surface 111 of the substrate 110 and has two or more stud bumps (Stud Bump) 122 formed by wire bonding. (SBB, Stud Bump Bonding) mode is bonded to the bonding pad 113. For example, when the chip 120 is originally suitable for the application of the window type ball grid array package, the bump 122 is located in the central area of the chip 120 . The encapsulant 150 is molded on the upper surface 111 of the substrate 110 and seals the chip 120 . The external terminal 170 is disposed on the lower surface 112 of the substrate 110 . Please refer to FIG. 2 , the manufacturing method of the flip-chip packaging structure 100 includes the following steps: step 1, providing a substrate;
实用新型内容Utility model content
有鉴于此,本实用新型的主要目的在于提供一种具有非阵列凸块的倒装芯片封装结构,能控制芯片与基板之间的平行度与间隙,并避免芯片倾斜与凸块焊点断裂。In view of this, the main purpose of the present invention is to provide a flip-chip packaging structure with non-array bumps, which can control the parallelism and gap between the chip and the substrate, and avoid chip tilt and bump solder joint breakage.
本实用新型的目的及解决其技术问题是采用以下技术方案来实现的。依据本实用新型的一种具有非阵列凸块的倒装芯片封装结构,主要包含基板、芯片、两个或两个以上间隔粘着件以及封胶体。该基板具有上表面以及下表面,该上表面形成有两个或两个以上接合垫。该芯片设置于该基板的该上表面,该芯片的主动面设有两个或两个以上凸块,其中该凸块为非阵列设置并接合至该接合垫。该间隔粘着件设置于该基板的该上表面以介设于该基板与该芯片之间,用以支撑该芯片的该主动面的周边。该封胶体形成于该基板的该上表面并密封该芯片。The purpose of this utility model and its technical solution are to adopt the following technical solutions to achieve. A flip-chip packaging structure with non-array bumps according to the present invention mainly includes a substrate, a chip, two or more spaced adhesive parts, and an encapsulant. The substrate has an upper surface and a lower surface, and two or more bonding pads are formed on the upper surface. The chip is disposed on the upper surface of the substrate, and the active surface of the chip is provided with two or more bumps, wherein the bumps are arranged in a non-array and bonded to the bonding pad. The spacer adhesive is disposed on the upper surface of the substrate to be interposed between the substrate and the chip, and is used to support the periphery of the active surface of the chip. The encapsulant is formed on the upper surface of the substrate and seals the chip.
本实用新型的目的及解决其技术问题,还可采用以下技术措施进一步实现。The purpose of this utility model and the solution to its technical problems can also be further realized by adopting the following technical measures.
在前述倒装芯片封装结构中,该间隔粘着件可由两个或两个以上间隔球与两段或两段以上粘着胶所组成,该粘着胶设置于该基板的该上表面并粘附该间隔球。In the aforementioned flip-chip packaging structure, the spacer adhesive can be composed of two or more spacer balls and two or more sections of adhesive, the adhesive is arranged on the upper surface of the substrate and adheres to the spacer. ball.
在前述倒装芯片封装结构中,该基板可具有两个或两个以上线路,其形成于该基板的该上表面,并且该间隔球可不直接下压至该线路。In the aforementioned flip-chip package structure, the substrate may have two or more circuits formed on the upper surface of the substrate, and the spacer balls may not be directly pressed down to the circuits.
在前述倒装芯片封装结构中,可另外包含底部填充胶,填满该基板与该芯片之间的间隙以密封该凸块。In the aforementioned flip-chip packaging structure, an underfill glue may be additionally included to fill the gap between the substrate and the chip to seal the bump.
在前述倒装芯片封装结构中,该底部填充胶可覆盖该线路并粘着该芯片的该主动面。In the aforementioned flip-chip packaging structure, the underfill glue can cover the circuit and adhere to the active surface of the chip.
在前述倒装芯片封装结构中,该凸块可为结线凸块,该间隔球不粘着该芯片,仅用以控制该芯片与该基板之间的平行度与间隙,当该芯片以钉头凸点焊接(SBB)方式接合至该基板,该芯片在与其主动面平行的平面内震荡滑动。In the aforementioned flip-chip packaging structure, the bump can be a wiring bump, and the spacer ball is not attached to the chip, and is only used to control the parallelism and the gap between the chip and the substrate. Bonded to the substrate by bump bonding (SBB), the chip vibrates and slides in a plane parallel to its active face.
在前述倒装芯片封装结构中,该间隔粘着件可为电绝缘性粘胶体。In the aforementioned flip-chip packaging structure, the spacer adhesive can be an electrically insulating adhesive.
在前述倒装芯片封装结构中,该封胶体可覆盖该线路。In the aforementioned flip-chip packaging structure, the encapsulant can cover the circuit.
在前述倒装芯片封装结构中,该间隔粘着件可具有表面柔软特性。In the aforementioned flip chip package structure, the spacer adhesive may have a surface soft property.
在前述倒装芯片封装结构中,该间隔粘着件可远离而不接触该凸块。In the aforementioned flip-chip package structure, the spacer adhesive can be away from the bump without contacting it.
在前述倒装芯片封装结构中,可另外包含两个或两个以上外接端子,其设置于该基板的该下表面。In the aforementioned flip-chip packaging structure, two or more external terminals may be further included, which are disposed on the lower surface of the substrate.
在前述倒装芯片封装结构中,该芯片可为跨封装形态的中高频存储器芯片,其选自于533MHz至1600MHz的第二代双倍数据传输率同步动态随机存取存储器(DDR2 DRAM)芯片。In the aforementioned flip-chip packaging structure, the chip can be a mid-high frequency memory chip in a cross-package form, which is selected from the second-generation double data rate synchronous dynamic random access memory (DDR2 DRAM) chip of 533MHz to 1600MHz.
由以上技术方案可以看出,本实用新型的具有非阵列凸块的倒装芯片封装结构,有以下优点与功效:From the above technical solutions, it can be seen that the flip-chip packaging structure with non-array bumps of the present invention has the following advantages and effects:
一、利用间隔球或间隔粘着件的设置位置能提供芯片周边的支撑力,使在倒装焊接或/与封胶的过程中不会有芯片倾斜的问题。因此,丝焊的芯片具有共用性,可沿用而封装成具有非阵列凸块的倒装芯片封装结构。1. The placement of spacer balls or spacer adhesives can provide support around the chip, so that there will be no problem of chip tilt during flip-chip soldering or/and sealing. Therefore, the wire-bonded chip has commonality and can be packaged into a flip-chip package structure with non-array bumps.
二、借由粘着胶粘接间隔球于基板上或是间隔粘着件的表面柔软特性,以确保支撑效果。故能仅控制芯片与基板之间的平行度与间隙,使得芯片可作XY平面震荡滑动进行钉头凸点焊接(SBB)方式的倒装焊接,以提高具有非阵列凸块的倒装芯片封装结构的质量。2. The spacer balls are bonded on the substrate by adhesive or the surface softness of the spacer adhesive parts is used to ensure the supporting effect. Therefore, only the parallelism and the gap between the chip and the substrate can be controlled, so that the chip can be oscillatingly slid in the XY plane for flip-chip soldering in the form of stud bump bonding (SBB) to improve flip-chip packaging with non-array bumps the quality of the structure.
三、利用间隔粘着件具有电绝缘性的特性,能避免造成电性短路现象。3. The use of spacer adhesives has the characteristics of electrical insulation, which can avoid the phenomenon of electrical short circuit.
四、由于间隔球不直接下压基板的线路,能避免线路受到挤压而受损。4. Since the spacer balls do not directly press down on the circuit of the substrate, the circuit can be prevented from being squeezed and damaged.
五、借由底部填充胶或封胶体填入倒装芯片间隙,以覆盖线路并具有保护线路的功效,使得基板不需另外形成防焊层,借以降低制造成本。5. Fill the flip-chip gap with underfill or encapsulant to cover the circuit and protect the circuit, so that the substrate does not need to be additionally formed with a solder mask, thereby reducing the manufacturing cost.
附图说明 Description of drawings
图1为公知的具有非阵列凸块的倒装芯片封装结构的截面示意图;1 is a schematic cross-sectional view of a known flip-chip packaging structure with non-array bumps;
图2为公知的具有非阵列凸块的倒装芯片封装结构的制造方法流程方框图;Fig. 2 is a flow block diagram of a known manufacturing method of a flip-chip packaging structure with non-array bumps;
图3为依据本实用新型的第一具体实施例的一种具有非阵列凸块的倒装芯片封装结构的示意图;3 is a schematic diagram of a flip-chip packaging structure with non-array bumps according to the first specific embodiment of the present invention;
图4为依据本实用新型的第一具体实施例的该倒装芯片封装结构在制造流程中的组件示意图;4 is a schematic diagram of components in the manufacturing process of the flip-chip packaging structure according to the first specific embodiment of the present invention;
图5为依据本实用新型的第二具体实施例的另一种具有非阵列凸块的倒装芯片封装结构的示意图;5 is a schematic diagram of another flip-chip packaging structure with non-array bumps according to the second specific embodiment of the present invention;
图6为依据本实用新型的第二具体实施例的该倒装芯片封装结构的制造流程图。FIG. 6 is a flow chart of manufacturing the flip-chip packaging structure according to the second embodiment of the present invention.
附图标记说明Explanation of reference signs
S1 间隙 S2 间隙S1 Clearance S2 Clearance
1 提供基板 2 倒装焊接1 Substrate Provided 2 Flip Chip Soldering
3 封胶 4 设置外接端子3 Sealing glue 4 Setting external terminals
10 点胶针头 20 点胶针头10 Dispensing needles 20 Dispensing needles
30 点胶针头 100 倒装芯片封装结构30 Dispensing needles 100 Flip-chip package structure
110 基板 111 上表面110 Substrate 111 Upper surface
112 下表面 113 接合垫112 Lower Surface 113 Engagement Pad
120 芯片 122 凸块120 chip 122 bump
150 封胶体 170 外接端子150 Sealant 170 External terminal
200 倒装芯片封装结构 210 基板200 Flip Chip Package Structure 210 Substrate
211 上表面 212 下表面211 upper surface 212 lower surface
213 接合垫 214 线路213 Bonding Pad 214 Line
220 芯片 221 主动面220 chip 221 active surface
222 凸块 230 间隔球222 bump 230 spacer ball
240 粘着胶 250 封胶体240 Adhesive 250 Sealant
260 底部填充胶 270 外接端子260 Underfill 270 External terminal
300 倒装芯片封装结构 310 基板300 Flip
311 上表面 312 下表面311
313 接合垫 314 线路313
320 芯片 321 主动面320
322 凸块 340 间隔粘着件322
350 封胶体 370 外接端子350
具体实施方式 Detailed ways
依据本实用新型的第一具体实施例,一种具有非阵列凸块的倒装芯片封装结构举例说明于图3的示意图。图4为该倒装芯片封装结构在制造流程中的组件示意图。According to the first embodiment of the present invention, a flip-chip packaging structure with non-array bumps is illustrated in the schematic diagram of FIG. 3 . FIG. 4 is a schematic diagram of components in the manufacturing process of the flip-chip packaging structure.
该倒装芯片封装结构200主要包含基板210、芯片220、两个或两个以上间隔粘着件以及封胶体250。该间隔粘着件由两个或两个以上间隔球230与两段或两段以上粘着胶240所组成。该基板210具有上表面211以及下表面212,该上表面211形成有两个或两个以上接合垫213。该基板210可为印刷电路板、陶瓷基板或玻璃基板。在本实施例中,该接合垫213可以直线或多条平行直线的排列方式设置于该上表面211的中央区域(如图4中的A图所示)。The flip-chip packaging structure 200 mainly includes a substrate 210 , a chip 220 , two or more spaced adhesive members, and an encapsulant 250 . The spacer adhesive piece is composed of two or more spacer balls 230 and two or more sections of adhesive glue 240 . The substrate 210 has an upper surface 211 and a lower surface 212 , and two or more bonding pads 213 are formed on the upper surface 211 . The substrate 210 can be a printed circuit board, a ceramic substrate or a glass substrate. In this embodiment, the bonding pads 213 can be arranged in a straight line or a plurality of parallel straight lines on the central area of the upper surface 211 (as shown in Figure A of FIG. 4 ).
请参阅图3所示,该芯片220设置于该基板210的该上表面211。该芯片220可为存储器芯片,更具体地说,该芯片220可为第二代双倍数据传输率(DDR2)存储器芯片或第三代双倍数据传输率(DDR3)存储器芯片。并且,该芯片220的主动面221设有两个或两个以上凸块222,其中该凸块222为非阵列设置并接合至该接合垫213。“非阵列设置”指不是按照N行数乘以M列数的矩阵方式排列,其中N与M是大于二的正整数,并且凸块设置区域远小于该芯片220的该主动面221,至少应在二分之一以下。换言之,该凸块222是不借由重配置线路(RDL)工艺的分散调整,而集中在芯片主动面的某一区域。在本实施例中,该凸块222可位于该主动面221的中央区域并可为线性排列,其中该凸块222与该接合垫213相互对应(如图4中的B图所示)。该凸块222可为金凸块、铜凸块或是其它导电材质的复合凸块。在本实施例中,该凸块222为打线形成的结线凸块(StudBump),并以钉头凸点焊接(SBB)方式接合至该接合垫213。更具体地说,钉头凸点焊接(SBB)令该凸块222与该接合垫213之间产生超声波震荡摩擦所形成的金金键合或其它金属键合。其中,超声波震荡是在XY平面(即是与芯片主动面221平行的平面)作快速往复微移动,以达到低温金属键合。而较佳地,往复微移动方向应与该凸块222的线性排列方向为垂直,以避免该凸块222在超声波震荡过程产生短路接合。本实用新型中的一个具体功效便是利用该间隔球230与该粘着胶240的结合关系控制该芯片220与该基板210之间的平行度与间隙,以维持芯片支撑效果又可达成钉头凸点焊接(SBB)方式的倒装焊接,理由如下两段所述。Please refer to FIG. 3 , the chip 220 is disposed on the upper surface 211 of the substrate 210 . The chip 220 can be a memory chip, more specifically, the chip 220 can be a second-generation double data rate (DDR2) memory chip or a third-generation double data rate (DDR3) memory chip. Moreover, the active surface 221 of the chip 220 is provided with two or more than two bumps 222 , wherein the bumps 222 are arranged in a non-array and bonded to the bonding pads 213 . "Non-array arrangement" means not arranged in a matrix of N rows multiplied by M columns, where N and M are positive integers greater than two, and the bump arrangement area is much smaller than the active surface 221 of the chip 220, at least Below one-half. In other words, the bumps 222 are concentrated on a certain area of the active surface of the chip without being distributed and adjusted by the reconfiguration line (RDL) process. In this embodiment, the bumps 222 can be located in the central area of the active surface 221 and can be arranged linearly, wherein the bumps 222 and the bonding pads 213 correspond to each other (as shown in B of FIG. 4 ). The bumps 222 can be gold bumps, copper bumps or composite bumps made of other conductive materials. In this embodiment, the bump 222 is a stud bump (StudBump) formed by wire bonding, and is bonded to the bonding pad 213 by stud bump bonding (SBB). More specifically, the stud bump bonding (SBB) generates gold-gold bonding or other metal bonding between the bump 222 and the bonding pad 213 by ultrasonic vibration friction. Wherein, the ultrasonic vibration is to perform rapid reciprocating micro-movement on the XY plane (ie, the plane parallel to the active surface 221 of the chip), so as to achieve low-temperature metal bonding. Preferably, the reciprocating micro-movement direction should be perpendicular to the linear arrangement direction of the bumps 222 , so as to avoid short-circuit bonding of the bumps 222 during the ultrasonic vibration process. A specific function of the utility model is to use the bonding relationship between the spacer ball 230 and the adhesive 240 to control the parallelism and the gap between the chip 220 and the substrate 210, so as to maintain the supporting effect of the chip and achieve nail head protrusion. Spot bonding (SBB) method of flip-chip bonding, the reason is described in the following two paragraphs.
请参阅图3所示,该间隔球230设置于该基板210的该上表面211,以介设于该基板210与该芯片220之间,该间隔球230支撑该芯片220的该主动面221的周边。借由这样的组合,在倒装焊接步骤中,该芯片220的主动面221并不被该间隔球230粘着,可作XY平面超声波震荡的滑动。具体地说,该间隔球230远离该芯片220的该凸块222且邻近该芯片220的该主动面221的周边,以提供较佳的芯片可滑动支撑效果。更具体地说,该间隔球230的球径可不大于该芯片220的该凸块222的高度,以确保该芯片220与该基板210之间的键合。请参阅图3所示,该间隔球230的球径用以界定该基板210与该芯片220之间的间隙S1,大约等于该芯片220的该主动面221至该基板210的该上表面211的垂直距离。其中,该间隔球230应具有相同的球径。Please refer to FIG. 3, the spacer ball 230 is arranged on the upper surface 211 of the substrate 210 to be interposed between the substrate 210 and the chip 220, and the spacer ball 230 supports the active surface 221 of the chip 220. around. With such a combination, during the flip-chip bonding step, the active surface 221 of the chip 220 is not adhered by the spacer balls 230 , and can be slid by ultrasonic oscillation in the XY plane. Specifically, the spacer ball 230 is away from the bump 222 of the chip 220 and adjacent to the periphery of the active surface 221 of the chip 220 to provide a better chip slidable support effect. More specifically, the ball diameter of the spacer ball 230 may not be greater than the height of the bump 222 of the chip 220 to ensure the bonding between the chip 220 and the substrate 210 . Please refer to FIG. 3, the ball diameter of the spacer ball 230 is used to define the gap S1 between the substrate 210 and the chip 220, which is approximately equal to the distance from the active surface 221 of the chip 220 to the upper surface 211 of the substrate 210. vertical distance. Wherein, the spacer balls 230 should have the same ball diameter.
请参阅图3所示,该粘着胶240设置于该基板210的该上表面211并粘附该间隔球230。因此,该粘着胶240用以将该间隔球230限制在该基板210的该上表面211,以避免该间隔球230产生位移。在本实施例中,该粘着胶240不粘接该芯片220的该主动面221。该粘着胶240的固化使得该间隔球230能稳固设置于该基板210上,而该粘着胶240的固化可在倒装焊接步骤之后执行,以使该间隔球230能用以界定上述的倒装焊接间隙S1,并且,即使该粘着胶240沾附至该芯片220的该主动面221,在未固化之前仍不会粘着该芯片220,以使该芯片220在倒装焊接步骤中可作XY平面的超声波震荡。较佳地,该粘着胶240远离该基板210的该接合垫213,以避免污染该接合垫213。在本实施例中,该粘着胶240的材质可为环氧树脂(Epoxy)。Please refer to FIG. 3 , the adhesive 240 is disposed on the upper surface 211 of the substrate 210 and adheres to the spacer ball 230 . Therefore, the adhesive 240 is used to constrain the spacer ball 230 on the upper surface 211 of the substrate 210 to avoid displacement of the spacer ball 230 . In this embodiment, the adhesive 240 does not bond the active surface 221 of the chip 220 . The curing of the adhesive 240 enables the spacer ball 230 to be firmly disposed on the substrate 210, and the curing of the adhesive 240 can be performed after the flip-chip soldering step, so that the spacer ball 230 can be used to define the above-mentioned flip chip. Solder gap S1, and, even if the adhesive 240 adheres to the active surface 221 of the chip 220, it will not stick to the chip 220 before it is cured, so that the chip 220 can be used as an XY plane in the flip-chip welding step ultrasonic vibration. Preferably, the adhesive 240 is kept away from the bonding pad 213 of the substrate 210 to avoid contamination of the bonding pad 213 . In this embodiment, the material of the adhesive 240 may be epoxy resin (Epoxy).
在本实施例中,请参阅图3所示,该基板210可具有两条或两条以上线路214,其形成于该基板210的该上表面211。较佳地,如图4中的A图所示,该间隔球230可不直接下压至该线路214,故可避免该线路214受到挤压的应力而受损,进而影响电性传输的质量。在本实施例中,请参阅图3所示,该线路214与该接合垫213可为同一线路层。在本实施例中,该线路214可为裸线设计,可不被防焊层所覆盖,这是由于该芯片220在该间隔球230的支持之下与该基板210之间具有良好的平行度与精准的倒装焊接缝隙。In this embodiment, please refer to FIG. 3 , the substrate 210 may have two or more lines 214 formed on the upper surface 211 of the substrate 210 . Preferably, as shown in Figure A of FIG. 4 , the spacer ball 230 does not directly press down on the circuit 214 , so that the circuit 214 is prevented from being damaged due to extrusion stress, thereby affecting the quality of electrical transmission. In this embodiment, please refer to FIG. 3 , the circuit 214 and the bonding pad 213 may be in the same circuit layer. In this embodiment, the circuit 214 can be a bare wire design, and may not be covered by a solder mask layer, because the chip 220 has good parallelism and good parallelism between the chip 220 and the substrate 210 under the support of the spacer ball 230. Precise flip-chip soldering gap.
请参阅图3所示,该封胶体250形成于该基板210的该上表面211并密封该芯片220,提供适当的封装保护并可防止尘埃污染。该封胶体250可为压模或称转移成型(Transfer Molding)的技术加以形成。Please refer to FIG. 3 , the encapsulant 250 is formed on the upper surface 211 of the substrate 210 and seals the chip 220 , providing proper package protection and preventing dust pollution. The encapsulant 250 can be formed by compression molding or transfer molding.
在本实施例中,请参阅图3所示,该倒装芯片封装结构200可另外包含底部填充胶260,其填满该基板210与该芯片220之间的间隙S1以密封该凸块222,以避免应力集中在特定凸块222处而使其断裂。该底部填充胶260可覆盖该线路214并粘着芯片220的主动面221。具体地说,该底部填充胶260可密封该粘着胶240,其中该底部填充胶260还覆盖至该芯片220的局部侧边,有助于固定该芯片220以避免该芯片220位移。由于该间隙S1可精准控制在一个固定值,故利用毛细作用该底部填充胶260能顺利地填满该间隙S1,不会内藏气泡。In this embodiment, please refer to FIG. 3 , the flip-chip packaging structure 200 may additionally include an underfill 260, which fills the gap S1 between the substrate 210 and the chip 220 to seal the bump 222, In order to prevent the stress from concentrating on the specific bump 222 and causing it to break. The underfill 260 can cover the circuit 214 and adhere to the active surface 221 of the chip 220 . Specifically, the underfill glue 260 can seal the adhesive glue 240 , wherein the underfill glue 260 also covers a part of the side of the chip 220 , helping to fix the chip 220 to avoid displacement of the chip 220 . Since the gap S1 can be accurately controlled at a fixed value, the underfill 260 can successfully fill the gap S1 by capillary action without trapping air bubbles.
在本实施例中,请参阅图3所示,该倒装芯片封装结构200可另外包含两个或两个以上外接端子270,其设置于该基板210的该下表面212,以供作为输入端及/或输出端以使该倒装芯片封装结构200可表面接合到外界装置,例如印刷电路板(图中未绘出)。该外接端子270可为焊球、锡膏、金属接触垫或插针。In this embodiment, as shown in FIG. 3 , the flip-chip packaging structure 200 may additionally include two or more external terminals 270 disposed on the lower surface 212 of the substrate 210 for use as input terminals. And/or the output end so that the flip-chip package structure 200 can be surface-bonded to an external device, such as a printed circuit board (not shown in the figure). The external terminals 270 can be solder balls, solder paste, metal contact pads or pins.
因此,借由该间隔球230与该粘着胶240的设置位置能为该芯片220的周边提供较佳的支撑效果,使得在倒装焊接时能使该芯片220达到平衡而不会产生上下摆动,以及在封胶时能避免该芯片220受模流压力影响而产生倾斜,故该倒装芯片封装结构200不会有芯片倾斜的问题,更能确保该芯片220与该基板210之间的电性连接质量。并且,该粘着胶240粘接该间隔球230,故能防止因该间隔球230产生位移而造成无法有效支撑该芯片220的问题。另外可利用该底部填充胶260使得该芯片220能更稳固地设置在该基板210上,以避免该芯片220受模流压力的影响产生倾斜,更可避免因应力集中造成凸块222焊点断裂的问题。此外,该底部填充胶260覆盖该线路214,便可达到保护该线路214的功效,故该基板210不需另外形成防焊层,以节省制造成本。Therefore, the placement of the spacer ball 230 and the adhesive 240 can provide a better supporting effect for the periphery of the chip 220, so that the chip 220 can be balanced during flip-chip soldering without swinging up and down. And it can prevent the chip 220 from being tilted due to the influence of mold flow pressure during sealing, so the flip-chip packaging structure 200 will not have the problem of chip tilting, and the electrical property between the chip 220 and the substrate 210 can be ensured. Connection quality. Moreover, the adhesive 240 adheres the spacer balls 230 , so that the problem that the chip 220 cannot be effectively supported due to the displacement of the spacer balls 230 can be prevented. In addition, the underfill 260 can be used to make the chip 220 more firmly placed on the substrate 210, so as to prevent the chip 220 from being tilted under the influence of mold flow pressure, and to prevent the solder joints of the bump 222 from breaking due to stress concentration. The problem. In addition, the underfill 260 covers the circuit 214 to protect the circuit 214 , so the substrate 210 does not need to form a solder resist layer to save manufacturing cost.
本实用新型进一步说明前述非阵列凸块的倒装芯片封装结构200的制造方法,举例说明于图4的制造流程中的组件示意图。The present invention further illustrates the manufacturing method of the non-array bump flip-chip packaging structure 200 , and an example is shown in the schematic diagram of components in the manufacturing process of FIG. 4 .
首先,请参阅图4中的A图所示,提供该基板210,其具有该接合垫213,利用点胶技术借由点胶针头10将该粘着胶240局部点涂在该上表面211,以局部覆盖在该线路214上。并在该基板210的该上表面211且在该粘着胶240的涂布区内设置该间隔球230,其中该间隔球230不直接下压至该线路214且该间隔球230远离该接合垫213。该粘着胶240粘附该间隔球230,用以避免该间隔球230位移。First, please refer to Figure A in FIG. 4, the substrate 210 is provided, which has the bonding pad 213, and the adhesive 240 is partially coated on the upper surface 211 by the dispensing needle 10 using a dispensing technique, so as to The line 214 is partially covered. And the spacer ball 230 is arranged on the upper surface 211 of the substrate 210 and in the coating area of the adhesive 240 , wherein the spacer ball 230 is not directly pressed down to the circuit 214 and the spacer ball 230 is away from the bonding pad 213 . The adhesive 240 adheres to the spacer ball 230 to avoid displacement of the spacer ball 230 .
接着,进行倒装焊接步骤。请参阅图4中的B图所示,将该芯片220以该主动面221朝向该上表面211的方式设置于该基板210上,并使该芯片220的该凸块222接合至该接合垫213(如图3所示),以达到该芯片220与该基板210的电性互连。其中,该凸块222可为结线凸块,并且该凸块222与该接合垫213的接合方式可为钉头凸点焊接(SBB,Stud Bump Bonding)。在倒装焊接过程中,借由该间隔球230提供该芯片220周边的Z轴(纵向)支撑力,以避免该芯片220产生倾斜(如图3所示),但不限制该芯片220在XY平面(水平面)的滑移。Next, a flip chip bonding step is performed. 4, the chip 220 is disposed on the substrate 210 with the active surface 221 facing the upper surface 211, and the bump 222 of the chip 220 is bonded to the bonding pad 213. (as shown in FIG. 3 ), so as to achieve the electrical interconnection between the chip 220 and the substrate 210 . Wherein, the bump 222 can be a wiring bump, and the bonding method between the bump 222 and the bonding pad 213 can be stud bump bonding (SBB, Stud Bump Bonding). During the flip-chip bonding process, the Z-axis (longitudinal) supporting force around the chip 220 is provided by the spacer ball 230 to avoid the chip 220 from tilting (as shown in FIG. 3 ), but it does not limit the chip 220 in XY Plane (horizontal) slippage.
接着请参阅图4中的C图所示,利用点胶针头20将具有高流动性的该底部填充胶260点涂在该基板210的该上表面211。该底部填充胶260先涂划在该芯片220的侧边或L形两侧边,并以毛细现象填满该芯片220与该基板210之间的间隙S1,以密封该凸块222(如图3所示)。Next, please refer to Figure C in FIG. 4 , using the dispensing needle 20 to dispense the underfill 260 with high fluidity on the upper surface 211 of the substrate 210 . The underfill glue 260 is first drawn on the side of the chip 220 or the two sides of the L shape, and fills the gap S1 between the chip 220 and the substrate 210 by capillary phenomenon, so as to seal the bump 222 (as shown in FIG. 3).
下面请参阅图4中的D图所示,烘烤固化该底部填充胶260,以使该底部填充胶260填满该基板210与该芯片220之间的间隙S1(如图3所示)。请参阅图4中的D图所示,该底部填充胶260可覆盖至该芯片220的局部侧边,当该底部填充胶260固化之后便能固定该芯片220于该基板210上。其中,在倒装焊接步骤之后,该粘着胶240的固化可与该底部填充胶260的固化同时进行,或者可在该底部填充胶260点涂形成之前。Referring to FIG. 4 as shown in FIG. 4 , the underfill 260 is baked and cured so that the underfill 260 fills the gap S1 between the substrate 210 and the chip 220 (as shown in FIG. 3 ). Please refer to diagram D in FIG. 4 , the underfill 260 can cover a part of the side of the chip 220 , and the chip 220 can be fixed on the substrate 210 after the underfill 260 is cured. Wherein, after the flip-chip soldering step, the curing of the adhesive 240 may be performed simultaneously with the curing of the underfill 260 , or may be performed before the underfill 260 is formed by dispensing.
之后,请参阅图4中的E图所示,以压模方法将该封胶体250形成于该基板210上,以密封该芯片220,借以保护该芯片220不被外界尘埃与水气污染(如图3所示)。最后,请参阅图4中的F图所示,设置该外接端子270于该基板210的该下表面212,其中该外接端子270为阵列排列。在本实施例中,该外接端子270包含焊球。Afterwards, please refer to Fig. 4 shown in the E diagram, form this encapsulant 250 on this substrate 210 by compression molding method, to seal this chip 220, in order to protect this chip 220 from being polluted by external dust and moisture (such as Figure 3). Finally, as shown in FIG. 4 , the external terminals 270 are disposed on the lower surface 212 of the substrate 210 , wherein the external terminals 270 are arranged in an array. In this embodiment, the external terminals 270 include solder balls.
因此,本实用新型可以增加丝焊的芯片220的共用性,特别是原本适用于窗口型球栅阵列的丝焊芯片,可以沿用并封装成具有非阵列凸块的倒装芯片封装结构200,不会有芯片倾斜与凸块焊点断裂的问题。丝焊的芯片不需要重配置线路(RDL)工艺与凸块下金属承座(UBM pad),同一类芯片具有工艺调整的方便性。在第二代双倍数据传输率同步动态随机存取存储器(DDR2 DRAM,Double-Data-Rate Two Synchronous Dynamic Random Access Memory)半导体封装的具体应用上,包含两个或两个以上芯片的晶圆不需要预先制作为丝焊或是倒装焊接形式,可先测试以确定芯片的可运算存储器频率,并在晶圆切割之后,根据可运算存储器频率作分类。将可运算在553MHz、667MHz、800MHz的DDR2存储器芯片封装成窗口型球栅阵列封装结构;将可运算在1066MHz、1333MHz、1600MHz的DDR2存储器芯片封装成本实用新型的具有非阵列凸块的倒装芯片封装结构。DDR3存储器芯片的应用方法也是与上述相同。因此,不同分类区段的存储器频率芯片能选择性封装成适用的封装形态,不会有低存储器频率芯片却制成为阵列凸块的芯片,导致无法封装为窗口型球栅阵列封装结构或较低频率运算的封装结构;也不会有高存储器频率芯片仍为丝焊的芯片,导致只能封装成在低频率运算的窗口型球栅阵列封装结构,故深具产业上的利用价值并明显具有减少不适用芯片数量与增加工艺弹性的功效。Therefore, the utility model can increase the commonality of the wire-bonded chip 220, especially the wire-bonded chip originally suitable for the window-type ball grid array can be used and packaged into a flip-chip packaging structure 200 with non-array bumps, without There will be problems of chip tilt and bump solder joint breakage. Wire-bonded chips do not require reconfiguration line (RDL) process and under-bump metal socket (UBM pad), and the same type of chip has the convenience of process adjustment. In the specific application of the second-generation double data transfer rate synchronous dynamic random access memory (DDR2 DRAM, Double-Data-Rate Two Synchronous Dynamic Random Access Memory) semiconductor package, a wafer containing two or more chips does not It needs to be pre-fabricated in the form of wire bonding or flip-chip bonding. It can be tested first to determine the operable memory frequency of the chip, and after wafer dicing, it can be classified according to the operable memory frequency. Package the DDR2 memory chips that can operate at 553MHz, 667MHz, and 800MHz into a window-type ball grid array packaging structure; package the DDR2 memory chips that can operate at 1066MHz, 1333MHz, and 1600MHz. The utility model flip chip with non-array bumps package structure. The application method of the DDR3 memory chip is also the same as above. Therefore, memory frequency chips in different classification sections can be selectively packaged into suitable packaging forms, and there will be no low memory frequency chips made into chips with array bumps, resulting in the inability to be packaged into a window-type ball grid array package structure or lower The packaging structure of frequency calculation; there will be no high memory frequency chips that are still wire-bonded chips, which can only be packaged into a window-type ball grid array packaging structure for low-frequency calculations, so it has deep industrial application value and obvious The effect of reducing the number of unsuitable chips and increasing process flexibility.
依据本实用新型的第二具体实施例,另一种具有非阵列凸块的倒装芯片封装结构举例说明于图5的示意图。该倒装芯片封装结构300主要包含基板310、芯片320、两个或两个以上间隔粘着件340以及封胶体350。该基板310具有上表面311以及下表面312,该上表面311设有两个或两个以上接合垫313。在本实施例中,该接合垫313可位于该上表面311的中央区域。请参阅图5所示,该芯片320设置于该基板310的该上表面311,该芯片320的主动面321设有两个或两个以上凸块322,其中该凸块322为非阵列设置并接合至该接合垫313。在本实施例中,该凸块322可为金凸块,例如,打线形成的结线凸块。该凸块322至该接合垫313的接合方法可利用钉头凸点焊接(SBB)或是锡膏焊接。该芯片320可为存储器芯片,特指一种跨封装形态的中高频存储器芯片,例如由533MHz至1600MHz的第二代双倍数据传输率同步动态随机存取存储器(DDR2 DRAM)芯片。According to the second embodiment of the present invention, another flip-chip packaging structure with non-array bumps is illustrated in the schematic diagram of FIG. 5 . The flip-
请再参阅图5所示,该间隔粘着件340设置于该基板310的该上表面311以介设于该基板310与该芯片320之间,该间隔粘着件340粘附该芯片320的该主动面321的周边。该间隔粘着件340可远离而不接触该凸块322。该间隔粘着件340可为电绝缘性树脂,以避免造成电性短路现象。在本实施例中,该间隔粘着件340可为两面粘性胶带或是B阶粘着胶块,故可粘接该芯片320的该主动面321与该基板310的该上表面311,以使该芯片320固设于该基板310。较佳地,该间隔粘着件340具有表面柔软特性。也就是说,该间隔粘着件340用以粘附该芯片320的材料为低模数,使得该芯片220在倒装焊接步骤时可作XY平面(水平面)的超声波震荡滑动或是微调。Please refer to FIG. 5 again, the
请参阅图5所示,该封胶体350形成于该基板310的该上表面311并密封该芯片320,并且该封胶体350填满该基板310与该芯片320之间的间隙S2以密封该凸块322。在本实施例中,该基板310可具有两条或两条以上线路314,其形成于该基板310的该上表面311。较佳地,该封胶体350可覆盖该线路314,以避免该线路314受到污染,故该基板310不需另外形成防焊层借以减少制造成本。请再参阅图5所示,该倒装芯片封装结构300可另外包含两个或两个以上外接端子370,其设置于该基板310的该下表面312,以供对外表面接合。5, the
因此,借由该间隔粘着件340,在倒装焊接或/与封胶的过程中,该间隔粘着件340得以提供该芯片320周边的支撑力,借此避免该芯片320产生倾斜与该凸块322产生焊点断裂的问题。Therefore, by means of the
本实用新型进一步说明前述非阵列凸块的倒装芯片封装结构的制造方法举例说明于图6的流程图。The present invention further illustrates the manufacturing method of the aforementioned non-array bump flip-chip packaging structure as illustrated in the flow chart of FIG. 6 .
首先,请参阅图6中的A图所示,提供具有该接合垫313的该基板310,并利用点胶技术借由点胶针头30将该间隔粘着件340局部点涂在该基板310的该上表面311,其中该间隔粘着件340远离该接合垫313。该间隔粘着件340可局部覆盖该基板310的该线路314。由于该间隔粘着件340为电绝缘性,故即使该线路314为裸线也不会造成电性短路的问题。First, please refer to Figure A in FIG. 6, provide the
接着,请参阅图6中的B图所示,进行倒装焊接步骤,以该芯片320的该主动面321朝向该基板310的方式设置于该基板310上,并使该芯片320的该凸块322接合至对应的该接合垫313(如图5所示),以达到该芯片320与该基板310的电性互连。在倒装芯片过程中,该芯片320的周边可借由该间隔粘着件340得到支撑力,故不会有芯片倾斜的问题(如图5所示)。Next, please refer to FIG. 6 shown in the B diagram, carry out the flip-chip welding step, with the mode that the
接着,请参阅图6中的C图所示,烘烤该间隔粘着件340,以使该间隔粘着件340固化以粘着该基板310与该芯片320,并提供后续模封工艺中该芯片320的周边较佳的支撑与固定效果。Next, please refer to Figure C in FIG. 6, bake the
之后,请参阅图6中的D图所示,以压模方法将该封胶体350形成在该基板310上并填满该基板310与该芯片320之间的间隙S2,以密封该芯片320与该凸块322(如图5所示)。最后,请参阅图6中的E图所示,该外接端子370设置于该基板310的该下表面312。Afterwards, as shown in Figure D in FIG. 6, the
以上所述,仅是本实用新型的较佳实施例而已,并非对本实用新型作任何形式上的限制,虽然本实用新型已以较佳实施例揭示如上,然而并非用以限定本实用新型,任何熟悉本领域的技术人员,在不脱离本实用新型的权利要求书范围内,所作的任何简单修改、等效性变化与修饰,均涵盖于本实用新型的技术范围内。The above descriptions are only preferred embodiments of the present utility model, and do not limit the utility model in any form. Although the utility model has been disclosed as above with preferred embodiments, it is not used to limit the utility model. Any Any simple modifications, equivalent changes and modifications made by those skilled in the art without departing from the scope of the claims of the present utility model are covered by the technical scope of the present utility model.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237283A (en) * | 2010-04-27 | 2011-11-09 | 华东科技股份有限公司 | Flip-chip bonding method and flip-chip bonding construction of non-array bumps |
| CN102290394A (en) * | 2010-06-15 | 2011-12-21 | 南茂科技股份有限公司 | Heat dissipation type electronic packaging structure and preparation method thereof |
| CN104517931A (en) * | 2014-07-11 | 2015-04-15 | 株洲南车时代电气股份有限公司 | Structure and method for increasing power electronic packaging weld layer uniformity |
| CN109560068A (en) * | 2017-09-25 | 2019-04-02 | 力成科技股份有限公司 | Packaging structure and chip structure |
-
2008
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237283A (en) * | 2010-04-27 | 2011-11-09 | 华东科技股份有限公司 | Flip-chip bonding method and flip-chip bonding construction of non-array bumps |
| CN102237283B (en) * | 2010-04-27 | 2013-06-12 | 华东科技股份有限公司 | Flip-chip bonding method and flip-chip bonding construction of non-array bumps |
| CN102290394A (en) * | 2010-06-15 | 2011-12-21 | 南茂科技股份有限公司 | Heat dissipation type electronic packaging structure and preparation method thereof |
| CN102290394B (en) * | 2010-06-15 | 2014-05-07 | 南茂科技股份有限公司 | Heat dissipation electronic package structure and preparation method thereof |
| CN104517931A (en) * | 2014-07-11 | 2015-04-15 | 株洲南车时代电气股份有限公司 | Structure and method for increasing power electronic packaging weld layer uniformity |
| CN104517931B (en) * | 2014-07-11 | 2016-06-01 | 株洲南车时代电气股份有限公司 | Improve structure and the method thereof of welding layer homogeneity in power electronics package |
| CN109560068A (en) * | 2017-09-25 | 2019-04-02 | 力成科技股份有限公司 | Packaging structure and chip structure |
| US10607860B2 (en) | 2017-09-25 | 2020-03-31 | Powertech Technology Inc. | Package structure and chip structure |
| CN109560068B (en) * | 2017-09-25 | 2020-05-19 | 力成科技股份有限公司 | Package structure and chip structure |
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