CN201203679Y - Structure for multipath semiconductor laser to couple into single optical fiber - Google Patents
Structure for multipath semiconductor laser to couple into single optical fiber Download PDFInfo
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- CN201203679Y CN201203679Y CNU2007203094951U CN200720309495U CN201203679Y CN 201203679 Y CN201203679 Y CN 201203679Y CN U2007203094951 U CNU2007203094951 U CN U2007203094951U CN 200720309495 U CN200720309495 U CN 200720309495U CN 201203679 Y CN201203679 Y CN 201203679Y
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- optical fiber
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- heat sink
- semiconductor laser
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Abstract
A structure in which a multiplex discrete semiconductor laser is coupled into single optical fiber is disclosed, which is that laser chips with the same or different wavelengths are mounted on a step-like metal heat sink with each laser chip having a micro-cylindrical lens in the front thereof in order to collimate light beam fast axis directions to form parallel and equidistant light beams, each collimated light beam is irradiated onto a reflector, each reflective light beam is collimated in a slow axis direction via a cylindrical lens so as to obtain combined light beams that are compressed in the fast, slow axis direction, mutually parallel and compressed in the interval thereof, the light beams are coupled to a multi-mode optical fiber via focus of the lens. The structure has highly reliable and impact profile, extensive applicability and remarkable expandability, which is adapted to the fields including pumping of the solid laser, material surface treatment, laser medical treatment and laser display.
Description
Technical field
The utility model provides a kind of light that a plurality of independent semiconductor lasers are sent to merge the structure that is coupled into an optical fiber through shaping with after rearranging, by the laser module that this structure can obtain to have high-level efficiency, high power density laser is exported.
Background technology
Semiconductor laser by optical fiber output has application fields.No matter be laser scalpel, or the pumping source of industrial lasers mark, cutting or all solid laser and fiber laser, all need to have fine light beam quality, high power density and use lasing light emitter flexibly.Export again by semiconductor laser is coupled into optical fiber, can satisfy this demand.The method one that realizes high power density optical fiber output laser is to improve the Output optical power density of single semiconductor laser, the 2nd, and the photosynthetic and back output with the output of a plurality of semiconductor lasers.
The material growth of semiconductor laser and the progress of manufacture craft level are depended in the success of first method, and difficulty is bigger and promote limited.Second method mainly depends on the improvement of coupling technique, and is simple relatively in the realization, is to obtain the main path high-power and output of super high power laser.Its implementation has two kinds: the one, and semiconductor laser manufactured in the chip one-level becomes monolithic array form, and parallel running rearranges the output light of each laser instrument in the array by shaping optical system and to be merged together output; Another kind of mode be with many independently the output light of semiconductor laser be merged together output through shaping, discrete lasers can also can be connected in parallel connection.This dual mode respectively has its relative merits: because discrete lasers can be at the row filter that advances that is coupled, and can adopt separate refrigeration, therefore assembly reliability, consistance and the life-span that is combined into all is better than the assembly that uses array.
Two kinds of methods are arranged again on the merging mode.One, with each independently in laser instrument or the array output light of single laser instrument be coupled into an optical fiber separately, again multifiber is tied into a branch of output.This coupling scheme are simple relatively, but the useful area of optical fiber output light is bigger, and optical power density is not high enough.Two, adopt the special optical system that all output light are rearranged and be coupled into an optical fiber, so just can obtain than higher power density.
The utility model belongs to a kind of practical plan that the output of discrete lasers is optically coupled into a single fiber.
Because must being installed in, the discrete semiconductor chip of laser has on a certain size heat sink, if directly coupling is arranged and focused on to the output beam of a plurality of semiconductor lasers, usually owing to be subjected to the restriction of each chip and its heat sink volume, the combined light beam spatial volume is bigger, is difficult to obtain the optical fiber coupling output of little core diameter high power density.For reducing the spatial volume of combined light beam, must take certain measure.Some schemes have been arranged by taking various special measures, realized the output light of discrete lasers is rearranged, made enough little of the spatial volume of beam combination, the scioptics group is coupled into a thin optic fibre again.As No. 6324230, the United States Patent (USP) of Polaroid company, the U.S. Patent application US 2007/0116071A1 of nLIGHT Corporation etc.
The scheme of present patent application is by a ladder heat sink (1) and a reflection mirror array according to certain spacing arrangement (7), and the post lens (8) that are positioned at catoptron rear or the place ahead, with a plurality of light beams that are positioned at semiconductor laser chip (4) output after microtrabeculae lens (5) carry out the quick shaft direction collimation on the ladder, rearrange at quick shaft direction, and collimate at slow-axis direction, scioptics or lens combination (9) focus on and are coupled into simple optical fiber (10) again.
Summary of the invention
The utility model has solved the problem that the output of a plurality of single-chip laser instruments is optically coupled into an optical fiber.The scheme synoptic diagram is seen Fig. 1 and Fig. 2.A plurality of semiconductor laser chips are installed in respectively on each level of stepped appearance metal heat sink, and each level of ladder is all parallel and equidistant on X and Z direction, ladder long for Lz, level is high is Lx.The chip direct sintering or is gone up (Fig. 1) by a transition heat sink (3) sintering in heat sink (1) on heat sink (1).Microtrabeculae lens (5) are installed in each chip of laser the place ahead, and light beam is collimated at quick shaft direction (directions X).Light beam vertical chip end face behind the fast axis collimation is the equidistant outgoing of fan-like pattern along the Y direction, shines on the catoptron in the place ahead (7).All catoptrons all are installed on the catoptron heat sink (6).The step length that catoptron is heat sink (6) is identical with heat sink (1) with height, makes the adjacent catoptron high Lx of ladder of heat sink (1) that staggers successively on directions X, blocks the light beam of previous stage to avoid the back one-level.It is long that spacing equals the ladder of metal heat sink on the Z direction.So just guaranteed that each catoptron can both be over against a corresponding chip of laser.All catoptrons are all parallel to each other, and with laser beam exit direction (Y direction) angle at 45, such reflector group is 90 ° of all beam reflection deflections, propagate along the Z direction, and forming a branch of parallel on the Y direction, spacing is the beam combination of Lx.Post lens (8) are installed in the light path of each road light, these post lens can be placed on the place ahead (Fig. 2) or rear (Fig. 1) of catoptron heat sink (6) upper reflectors (7), these post lens collimate to the laser instrument slow-axis direction, make it to become approximately parallel light beam.So just make each road laser all collimated on fast axle and slow axis both direction, form a branch of along Z to propagation, the merging beam combination that on X, Y direction, has all collimated.If the post lens (8) of collimation slow-axis direction are positioned at (Fig. 1) behind the catoptron, then the adjacent post lens also will have the interval of Lx on directions X, do not block the light beam of previous stage to guarantee the back one-level.Such beam combination is again through a coupled lens focal imaging, fiber end face is placed on imaging plane, the numerical aperture that makes the light beam of merging focus on the back angle of divergence and optical fiber is complementary, the size of imaging in the fibre core scope of optical fiber, can obtain high efficiency coupling.Coupled lens can be single spherical lens or non-spherical lens, also can be lens combination.
The angle of divergence of semiconductor laser emitted light beams quick shaft direction is big, because the spherical aberration and the diffraction effect of microtrabeculae lens, in fact output beam through microtrabeculae lens compression collimation can not form completely parallel light, but has certain angle of divergence, the light beam of considering outgoing after the microtrabeculae collimated again must have the width relevant with the microtrabeculae lens diameter, therefore when illumination during to catoptron (7) on quick shaft direction (directions X) certain broadening must be arranged, this width has also just determined the high Lx in minimum rank of ladder heat sink (1,6).
Utilize this structure, selected laser instrument emission wavelength can be identical, also can be different, has very strong dirigibility.Adopt the chip of laser of two or more wavelength, and on electrode connects, control its electric current respectively, can realize function by simple optical fiber selectivity output different wavelengths of light.
The ladder number that this structure ladder is heat sink can be as required the laser general power and the power and the optical maser wavelength kind of single laser instrument choose, very flexible.The upper limit of counting its ladder depends on by the maximum diameter of hole and the heat sink maximum of ladder of the focus lens group of aberration restriction allows radiating condition.
Description of drawings
Fig. 1 is the synoptic diagram of the utility model design, and on the heat sink step of ladder, slow-axis direction collimation post lens are placed on after the catoptron in light path its chip of laser by the heat sink sintering of transition.The laser instrument light direction is the Y direction, and vertical (promptly fast axle) direction is a directions X, and slow-axis direction is the Z direction.
Fig. 2 is the synoptic diagram of the utility model design, and on the heat sink step of ladder, slow-axis direction collimation post lens are placed on before the catoptron in light path its chip of laser by the heat sink sintering of transition.
Fig. 3 is the design's a schematic diagram.Wherein left is the heat sink side view of ladder, and the upper right side is the beam shape synoptic diagram on the preceding square section of coupled lens.
1. ladders are heat sink among the figure, 2. total electrode, and 3. transition is heat sink, 4. chip of laser, 5. microtrabeculae lens, 6. catoptron is heat sink, 7. catoptron, 8. post lens, 9. lens or lens combination, 10. multimode optical fiber, the beam shape synoptic diagram after 11. shapings.
Embodiment
The discrete semiconductor chip of laser can direct sintering on stepped appearance heat sink (1), the metal of heat sink employing high thermal conductivity, for example oxygen-free copper.Also can be earlier with the semiconductor laser chip sintering on the metal or ceramic transition heat sink (3) of high thermal conductivity, be installed to again stepped appearance heat sink on, draw lead by total electrode (2).Adopt parallel way as laser instrument, chip of laser be sintered to ladder heat sink on or with transition heat sink be installed to ladder heat sink on the time, can not take insulation measures, ladder is heat sink to be an electrode of laser instrument.After then merging, another electrode of chip draws.If adopt series system, then must guarantee the electric isolation between every laser instrument, it is heat sink to adopt nonconducting high thermal conductivity pottery of surface metalation to do transition, for example beryllium oxide ceramics, aluminium nitride ceramics etc. are connected in series and draw lead-in wire as figure (1) and the on-link mode (OLM) of scheming (2).The chip of having done electric isolation also can go between separately and control separately.
By high-precision micropositioning stage and glue, microtrabeculae lens (5) are installed to each chip of laser the place ahead, make the light beam of laser instrument quick shaft direction obtain collimation, and parallel to each other and perpendicular to the outgoing of chip of laser end face.In the middle of installing, observe the collimation of light beam and the depth of parallelism between each light beam by checking the far-field spot position.
The step size that catoptron is heat sink (6) is made into heat sink (1) identical, and on ladder, produce the tick lables of catoptron (7) and post lens (8), according to the sign on the ladder exactly catoptron and post lens are installed in catoptron heat sink on, and fix with welding or gluing mode.Catoptron can be metal-coated membrane or deielectric-coating.
Catoptron and catoptron of post lens heat sink (6) and the relative installation of the ladder that installs chip of laser heat sink (1) will be installed, with five dimension (three translational degree of freedom, two rotary freedoms) micropositioning stage and suitable heat sink adjustment of clamp clamps catoptron, make the beam deflection direction be 90 ° and propagate and far-field spot reaches hour, catoptron heat sink (6) and ladder heat sink (1) are fixed on the base plate with the method for glue or welding along the Z direction.Again coupled lens (9) and multimode optical fiber (10) are installed in the light path, clamping the two respectively by five dimension (three translational degree of freedom, two rotary freedoms) micropositioning stages and suitable anchor clamps adjusts, up to obtaining the highest optical fiber output power, its method with glue or welding is fixed.So just finished the adjusting of light path system.
In this structure, can adopt the optical fiber of core diameter 200 μ m～1mm, numerical aperture 0.1～0.3, optical maser wavelength from 630nm to 2 μ m, by selecting different number of lasers (2～15), can obtain output power 1W～100W, average coupling efficiency is higher than 85%.
Claims (7)
1. a multi-channel semiconductor laser coupled is gone into the structure of simple optical fiber, it is characterized by chip of laser is installed on the stepped appearance metal heat sink, microtrabeculae lens are all arranged before each chip of laser, form parallel to its beam fast axis direction back that collimates, equally spaced light beam, each light beam through fast axis collimation all shines on the catoptron, make 90 ° of folded light beam deflections and make the spacing on the beam fast axis direction obtain compression, at catoptron the place ahead or rear, each road laser beam is all carried out the collimation of slow-axis direction through post lens, all are fast, slow-axis direction all is coupled into multimode optical fiber through the light beam that closes behind the bundle of collimation by condenser lens.
2. multi-channel semiconductor laser coupled according to claim 1 is gone into the structure of simple optical fiber, it is characterized by: the scope of step length (Lz) and height (Lx) arrives 3mm at 0.3mm.The ladder number is determined from 2 to 15 of quantity according to the power and the radiating condition of overall power requirement and single chip.
3. multi-channel semiconductor laser coupled according to claim 1 is gone into the structure of simple optical fiber, it is characterized by: chip of laser can direct sintering on stepped appearance is heat sink, also can by transition heat sink be installed in stepped appearance heat sink on.
4. multi-channel semiconductor laser coupled according to claim 1 is gone into the structure of simple optical fiber, it is characterized by: laser wavelength is from 400nm to 2000nm.
5. multi-channel semiconductor laser coupled according to claim 1 is gone into the structure of simple optical fiber, it is characterized by: all catoptrons are all equidistant, 45 is arranged, and arrangement of mirrors guarantees that on directions X each catoptron does not block the reflected light of adjacent mirror.
6. multi-channel semiconductor laser coupled according to claim 1 is gone into the structure of simple optical fiber, it is characterized by: the post lens that slow-axis direction is collimated are arranged in light path catoptron the place ahead or rear.
7. multi-channel semiconductor laser coupled according to claim 1 is gone into the structure of simple optical fiber, it is characterized by: multimode optical fiber core diameter scope be 200 μ m to 1000 μ m, the numerical aperture scope is 0.1 to 0.3, obtains the luminous power output of 1W～100W.
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| Application Number | Priority Date | Filing Date | Title |
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| CNU2007203094951U CN201203679Y (en) | 2007-12-27 | 2007-12-27 | Structure for multipath semiconductor laser to couple into single optical fiber |
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| Application Number | Priority Date | Filing Date | Title |
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| CNU2007203094951U CN201203679Y (en) | 2007-12-27 | 2007-12-27 | Structure for multipath semiconductor laser to couple into single optical fiber |
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| CN201203679Y true CN201203679Y (en) | 2009-03-04 |
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| CN101859025A (en) * | 2010-06-03 | 2010-10-13 | 中国科学院长春光学精密机械与物理研究所 | A reusable high-power semiconductor laser fiber output module |
| CN102064473A (en) * | 2010-12-10 | 2011-05-18 | 福州高意光学有限公司 | Visible light semiconductor laser capable of generating broadband output |
| CN102468607A (en) * | 2010-11-17 | 2012-05-23 | 北京中视中科光电技术有限公司 | Semiconductor laser light source |
| CN102646922A (en) * | 2012-04-26 | 2012-08-22 | 无锡亮源激光技术有限公司 | Tandem type semiconductor laser with circuit board |
| WO2012129790A1 (en) * | 2011-03-30 | 2012-10-04 | 青岛海信信芯科技有限公司 | Method and device for beam-shaping, light source module and device for laser display |
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| CN102064473B (en) * | 2010-12-10 | 2014-06-11 | 福州高意光学有限公司 | Visible light semiconductor laser capable of generating broadband output |
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| CN111613969B (en) * | 2019-02-26 | 2021-11-12 | 中国科学院半导体研究所 | Semiconductor laser beam combining device |
| CN112859258A (en) * | 2021-02-09 | 2021-05-28 | 北京凯普林光电科技股份有限公司 | Integrally designed laser radar bar optical fiber coupling module |
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