CN201180166Y - Electropolishing device for semiconductor materials - Google Patents
Electropolishing device for semiconductor materials Download PDFInfo
- Publication number
- CN201180166Y CN201180166Y CNU2008200191901U CN200820019190U CN201180166Y CN 201180166 Y CN201180166 Y CN 201180166Y CN U2008200191901 U CNU2008200191901 U CN U2008200191901U CN 200820019190 U CN200820019190 U CN 200820019190U CN 201180166 Y CN201180166 Y CN 201180166Y
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- China
- Prior art keywords
- anode
- negative electrode
- power supply
- electrolytic solution
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000463 material Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 10
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 3
- 239000010935 stainless steel Substances 0.000 claims abstract description 3
- 239000008151 electrolyte solution Substances 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 5
- 239000000523 sample Substances 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 4
- 239000003792 electrolyte Substances 0.000 abstract 3
- 239000003292 glue Substances 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- Weting (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
本实用新型提供一种半导体材料的电解抛光装置，包含盛有电解液的电解槽、电解槽盖、阳极、阴极、导线和交流电源、直流电源，其中阳极为欲抛光工件，阴极采用不锈钢，其特征在于：增设光照射装置和控制阳极探入电解液深度的调节装置；其中光照系统包括密封在玻璃管中的灯管，电解液中的导线用玻璃管密封保护，并穿过电解槽盖外接交流电源，玻璃管用支架支撑固定在电解槽中；调节装置包括螺纹套筒和载料块，螺纹套筒的外螺纹与电解槽盖的螺纹孔构成螺栓螺母副，载料块的螺杆与螺纹套筒的内螺纹构成螺栓螺母副；阳极用导电胶粘结于载料块底面；阴极与阳极对应接直流电源的阴极和阳极。
The utility model provides an electrolytic polishing device for semiconductor materials, which includes an electrolytic cell filled with electrolyte, an electrolytic cell cover, an anode, a cathode, a wire, an AC power supply, and a DC power supply, wherein the anode is a workpiece to be polished, and the cathode is made of stainless steel. It is characterized in that it adds a light irradiation device and an adjustment device to control the depth of the anode penetrating into the electrolyte; the light system includes a lamp tube sealed in a glass tube, and the wires in the electrolyte are sealed and protected by a glass tube, and are connected externally through the electrolytic cell cover. AC power supply, the glass tube is supported and fixed in the electrolytic cell by brackets; the adjustment device includes a threaded sleeve and a loading block. The internal thread of the barrel constitutes a bolt and nut pair; the anode is bonded to the bottom surface of the loading block with conductive glue; the cathode and the anode correspond to the cathode and anode connected to the DC power supply.
Description
Technical field
The utility model relates to a kind of electropolishing device of semiconductor material, belongs to the semiconductor material manufacture field.
Background technology
Electropolishing (anode light) technology was permitted the Bin Tasiji invention as far back as 1911 by the scholar of Russia, and it is a kind of method of utilizing the anodic corrosion method to make specimen surface become smoothly bright.When current density was enough, specimen surface was owing to selective dissolution takes place in electrochemical action, and the small convex part of material surface is dissolved in the solution, thereby becomes smooth smooth.Unrelieved stress that may cause when this method has been avoided mechanical polishing and top layer viscous deformation, thereby the true tissue of display material more properly.Electropolishing is widely used in the polishing of metallic substance.The metallic substance sample of best bright finish more needs electrochemical etching technology.
At present, the main employing of semiconductor material polishing mechanical polishing.Semiconductor material hardness height such as cadmium telluride, tellurium zinc cadmium and intensity is very low, it is long that wafer mechanical polishing expends man-hour, causes the error of thickness, parallelism easily, and residual mechanical stresses is big in the wafer, and very easily chipping.The polishing difficulty of large-sized wafer is bigger.Electropolishing can be avoided above-mentioned defective effectively.But the semiconductor material conductivity is relatively poor under the standard state, if implement electropolishing, current density is very little, and polishing efficiency is very low, and effect also is difficult to guarantee.
The utility model content
The purpose of this utility model provides and a kind ofly can overcome the device that above-mentioned defective, current density are big, can carry out electropolishing to semiconductor material.Its technical scheme is:
A kind of electropolishing device of semiconductor material, comprise electrolyzer, electro bath-lid, anode, negative electrode, lead and the AC power, the direct supply that fill electrolytic solution, wherein anode is for desiring polishing workpiece, negative electrode adopts stainless steel, it is characterized in that: set up the setting device that light irradiation device and control anode probe into the electrolytic solution degree of depth; Wherein illumination system comprises with the anti-corrosion end socket of waterproof and is sealed in fluorescent tube in the Glass tubing, the Glass tubing seal protection of the lead in the electrolytic solution, and pass the electro bath-lid external AC power supply, Glass tubing is fixed in the electrolyzer with stent support; Setting device comprises screw shell and material containing piece, and the outside screw of screw shell and the threaded hole of electro bath-lid constitute the bolt and nut pair, and the screw rod of material containing piece and the internal thread of screw shell constitute the bolt and nut pair; Anode is bonded in material containing piece bottom surface with conductive resin; Corresponding negative electrode and the anode that connects direct supply of negative electrode with anode.
Described electropolishing device, fluorescent tube can be straight tube shape, tubular, square; Also can be one or more.
The utility model compared with prior art, its advantage is:
1, utilize semiconductor material to different-waveband spectrographic response characteristic, the light source antianode illumination of a specific band is set between anode and negative electrode, the anodic conductivity can improve several times to tens times like this, and current density thereby significantly increase realize electropolishing.
2, be provided with the setting device of a cover anode position, can control anode position exactly.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment.
Among the figure: 1, screw shell 2, AC power 3, electro bath-lid 4, material containing piece 5, conductive resin 6, anode 7, end socket 8, fluorescent tube 9, support 10, negative electrode 11, Glass tubing 12, electrolyzer 13, electrolytic solution 14, current conducting rod 15, through hole 16, direct supply 17, lead
Embodiment
In the embodiment shown in fig. 1, anode 6 adopts tellurium zinc cadmium Cd
0.8Zn
0.2Te, fluorescent tube 8 select for use 700nm-780nm near infrared lamp to shine as radiation source antianode 6.
Fill in the electrolyzer 12 of electrolytic solution 13 and be provided with support 9 and negative electrode 10.Fluorescent tube 8 is put into Glass tubing 11, with 7 sealings of the anti-corrosion end socket of waterproof, and supports and fixes with support 9.Lead 17 Glass tubing seal protection in the electrolyzer 12, and from the fairlead of electro bath-lid 3, draw external AC power supply 2.The threaded hole of the outside screw of screw shell 1 and electro bath-lid 3 constitutes the bolt and nut pair, and the internal thread of the screw rod of material containing piece 4 and screw shell 1 constitutes the bolt and nut pair, rotates screw shell 1 and can regulate anode 6 and probe into position in the electrolytic solution 13.Anode 6 usefulness conductive resins 5 are bonded in material containing piece 4 bottom surfaces; Negative electrode 10 is by the negative electrode of current conducting rod 14 external direct current power supplies 16, and anode 6 connects the anode of direct supply 16 by conductive resin 5 and material containing piece 4, lead 17.Screw shell 1 is made for insulating material, and the good conductor of material containing piece 4 electricity consumptions is made, and electro bath-lid 3 has a plurality of through holes 15, and the tapped through hole 15 that wherein is positioned at the center is used to install screw shell 1, and other is used for injecting electrolytic solution 13 or is used for drawing of lead 17.
During work, rotation screw shell 1 makes anode 6 be in higher position, through hole 15 via electro bath-lid 3 utilizes catheter slowly electrolytic solution 13 to be injected in the electrolyzer 12, rotate screw shell 1 again anode 6 is slowly entered in the electrolytic solution 13, the position of control anode 6 avoids electrolytic solution 13 to touch conductive resin 5.Start fluorescent tube 8, connect direct supply 16, antianode 6 carries out electropolishing under illumination.
In the present embodiment, start the illumination system current density and increase about 8-10 doubly, through the electropolishing of a few hours, semiconductor material surface light, even, sample has reached test request.
Claims (2)
1, a kind of electropolishing device of semiconductor material, comprise electrolyzer (12), electro bath-lid (3), anode (6), negative electrode (10), lead (17) and the AC power (2), the direct supply (16) that fill electrolytic solution (13), wherein anode (6) is for desiring polishing workpiece, negative electrode (10) adopts stainless steel, it is characterized in that: set up the setting device that light irradiation device and control anode (6) probe into electrolytic solution (13) degree of depth; Wherein illumination system comprises with the anti-corrosion end socket of waterproof (7) and is sealed in fluorescent tube (8) in the Glass tubing (11), lead (17) in the electrolytic solution (13) is used the Glass tubing seal protection, and passing electro bath-lid (3) external AC power supply (2), Glass tubing (11) is supported and fixed in the electrolyzer (12) with support (9); Setting device comprises screw shell (1) and material containing piece (4), and the threaded hole of the outside screw of screw shell (1) and electro bath-lid (3) constitutes the bolt and nut pair, and the internal thread of the screw rod of material containing piece (4) and screw shell (1) constitutes the bolt and nut pair; Anode (6) is bonded in material containing piece (4) bottom surface with conductive resin (5); Corresponding negative electrode and the anode that connects direct supply (16) of negative electrode (10) with anode (6).
2, electropolishing device as claimed in claim 1 is characterized in that: fluorescent tube (8) be straight tube shape, tubular, quadrate any; Also can be one or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200191901U CN201180166Y (en) | 2008-03-20 | 2008-03-20 | Electropolishing device for semiconductor materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200191901U CN201180166Y (en) | 2008-03-20 | 2008-03-20 | Electropolishing device for semiconductor materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201180166Y true CN201180166Y (en) | 2009-01-14 |
Family
ID=40249666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200191901U Expired - Fee Related CN201180166Y (en) | 2008-03-20 | 2008-03-20 | Electropolishing device for semiconductor materials |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201180166Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101250745B (en) * | 2008-03-20 | 2010-04-07 | 山东理工大学 | Electrolytic polishing device used for realizing electrolytic polishing method of semiconductor material |
| CN110257895A (en) * | 2019-06-24 | 2019-09-20 | 江苏守航实业有限公司 | A kind of electrolytic polishing method and device of semiconductor material |
| CN110318092A (en) * | 2019-06-27 | 2019-10-11 | 江苏省沙钢钢铁研究院有限公司 | Auxiliary device for electrolytic polishing and using method thereof |
-
2008
- 2008-03-20 CN CNU2008200191901U patent/CN201180166Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101250745B (en) * | 2008-03-20 | 2010-04-07 | 山东理工大学 | Electrolytic polishing device used for realizing electrolytic polishing method of semiconductor material |
| CN110257895A (en) * | 2019-06-24 | 2019-09-20 | 江苏守航实业有限公司 | A kind of electrolytic polishing method and device of semiconductor material |
| CN110318092A (en) * | 2019-06-27 | 2019-10-11 | 江苏省沙钢钢铁研究院有限公司 | Auxiliary device for electrolytic polishing and using method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090114 Termination date: 20100320 |