CN201163820Y - Condenser Microphone Chip - Google Patents
Condenser Microphone Chip Download PDFInfo
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- CN201163820Y CN201163820Y CNU2008200791258U CN200820079125U CN201163820Y CN 201163820 Y CN201163820 Y CN 201163820Y CN U2008200791258 U CNU2008200791258 U CN U2008200791258U CN 200820079125 U CN200820079125 U CN 200820079125U CN 201163820 Y CN201163820 Y CN 201163820Y
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Abstract
Description
技术领域 technical field
本实用新型涉及传声器技术领域,特别是一种电容式传声器芯片。The utility model relates to the technical field of microphones, in particular to a capacitive microphone chip.
背景技术 Background technique
美国专利US5,870,482描述了基底做背极的传声器结构,发明了悬臂梁式振膜,悬臂梁一端固定,利用自由端边缘与背极构成电容,这种结构机械灵敏度对传声器灵敏度贡献很大,悬臂结构三端自由,振膜的姿态和可靠性不易得到保证;美国公开专利US2006/0093170 A1,提出了外部悬臂梁振膜,其中外部悬臂梁均匀分布的单膜结构,利用振膜边缘与背极形成电容,悬臂梁提高了机械灵敏度对传声器输出灵敏度的贡献,对振膜残余应力应力要求比较严格。U.S. Patent No. 5,870,482 describes the microphone structure with the base as the back pole, and invented a cantilever beam diaphragm. One end of the cantilever beam is fixed, and the free end edge and the back pole are used to form a capacitor. The mechanical sensitivity of this structure contributes a lot to the sensitivity of the microphone. The cantilever structure The three ends are free, and the posture and reliability of the diaphragm are not easy to be guaranteed; the US published patent US2006/0093170 A1 proposes an external cantilever beam diaphragm, in which the single-membrane structure with uniform distribution of the external cantilever beam is formed by the edge of the diaphragm and the back pole. Capacitors and cantilever beams increase the contribution of mechanical sensitivity to the output sensitivity of the microphone, and have strict requirements on the residual stress of the diaphragm.
实用新型内容Utility model content
本实用新型的目的是提出一种电容式传声器芯片,该电容式传声器芯片可以改进悬臂梁式振膜、外部悬臂梁振膜的性能。The purpose of the utility model is to propose a capacitive microphone chip, which can improve the performance of a cantilever beam diaphragm and an external cantilever beam diaphragm.
根据本实用新型的一方面,本实用新型提供了一种电容式传声器芯片,该电容式传声器芯片包括:基底;与基底间隔第一预定距离的振膜,所述振膜以悬臂梁的方式固定在基底上;下止挡,所述下止挡位于所述振膜之下,用于限制所述振膜的位移量。According to one aspect of the present invention, the present invention provides a capacitive microphone chip, the capacitive microphone chip comprises: a base; a diaphragm separated from the base by a first predetermined distance, and the diaphragm is fixed in the manner of a cantilever beam On the base; a lower stop, the lower stop is located under the diaphragm and is used to limit the displacement of the diaphragm.
为了实现本实用新型的目的,提出了一种新结构,主要包括:基底、振膜支撑、上止挡、下止挡,其中基底作为背极,有足够大的刚性,基底中间设置贯通孔,作为声孔;振膜边缘或者振膜边缘的引出悬梁通过振膜支撑固定于基底之上,在振膜和背极之间有预先设计好的间距,振膜在无振膜支撑的区域,为水平自由状态,充分释放振膜的残余应力;振膜自由端边缘设置上止挡和下止挡,振膜之上为上止挡,振膜之下为下止挡,上止挡、下止挡与振膜之间有预先设定好的微小间距,上止挡和下止挡限制振膜上下位置,固定振膜的状态,保证振膜的可靠性。In order to achieve the purpose of this utility model, a new structure is proposed, which mainly includes: a base, a diaphragm support, an upper stop, and a lower stop, wherein the base is used as a back pole and has sufficient rigidity, and a through hole is set in the middle of the base. As a sound hole; the edge of the diaphragm or the cantilever beam leading out of the edge of the diaphragm is fixed on the base through the support of the diaphragm, there is a pre-designed distance between the diaphragm and the back electrode, and the diaphragm is in the area without diaphragm support, for The horizontal free state fully releases the residual stress of the diaphragm; the free edge of the diaphragm is provided with an upper stop and a lower stop, the top of the diaphragm is the upper stop, and the bottom of the diaphragm is the lower stop There is a preset fine distance between the stopper and the diaphragm, the upper stopper and the lower stopper limit the up and down position of the diaphragm, fix the state of the diaphragm, and ensure the reliability of the diaphragm.
在振膜自由端边缘设置悬梁结构,下止挡设置在悬梁结构的悬梁支撑之下,电容传声器工作时,加在振膜和背极上电压使悬梁支撑与下止挡相抵,声波使振膜产生的振动变形将主要集中在悬梁上,振膜会保持柔软的特性。A cantilever structure is set on the edge of the free end of the diaphragm, and the lower stop is set under the cantilever support of the cantilever structure. When the condenser microphone is working, a voltage is applied to the diaphragm and the back electrode to make the cantilever support and the lower stop, and the sound waves make the diaphragm The resulting vibration deformation will be mainly concentrated on the cantilever, and the diaphragm will maintain its soft characteristics.
振膜边缘设有无数小孔改善了频响特性,同时在工艺过程中这些小孔也作为腐蚀孔,通过小孔腐蚀振膜之下原有的牺牲层。There are countless small holes on the edge of the diaphragm to improve the frequency response characteristics. At the same time, these small holes also serve as corrosion holes during the process, and the original sacrificial layer under the diaphragm is corroded through the small holes.
振膜边缘与背极形成电容结构。The edge of the diaphragm and the back electrode form a capacitive structure.
本实用新型的硅传声器芯片结构,具有制作工艺简单,高灵敏度、低噪声、宽频带特性。The silicon microphone chip structure of the utility model has the characteristics of simple manufacturing process, high sensitivity, low noise and wide frequency band.
附图说明 Description of drawings
图1为本实用新型第一实施例的电容式传声器芯片俯视图;Fig. 1 is the top view of the capacitive microphone chip of the first embodiment of the utility model;
图2为本实用新型第一实施例的电容式传声器芯片沿图AA虚线的剖面图;Fig. 2 is a sectional view of the capacitive microphone chip of the first embodiment of the present invention along the dotted line AA in Fig.
图3为本实用新型第一实施例的电容式传声器芯片沿图BB虚线的剖面图;Fig. 3 is a sectional view of the capacitive microphone chip of the first embodiment of the present invention along the dotted line BB in Fig.
图4为本实用新型第一实施例的电容式传声器芯片仰视图;Fig. 4 is a bottom view of the capacitive microphone chip of the first embodiment of the present invention;
图5为本实用新型第一实施例的电容式传声器芯片无振膜及上止挡俯视图;Fig. 5 is a top view of the capacitive microphone chip without diaphragm and upper stopper in the first embodiment of the present invention;
图6为本实用新型第二实施例的电容式传声器芯片俯视图;Fig. 6 is a top view of the capacitive microphone chip of the second embodiment of the present invention;
图7为本实用新型第二实施例的电容式传声器芯片沿图AA虚线的剖面图;Fig. 7 is a sectional view of the capacitive microphone chip according to the second embodiment of the present invention along the dotted line AA in Fig.
图8为本实用新型第二实施例的电容式传声器芯片沿图BB虚线的剖面图;Fig. 8 is a cross-sectional view of the capacitive microphone chip according to the second embodiment of the present invention along the dotted line BB in Fig.
图9为本实用新型第二实施例的电容式传声器芯片无振膜及上止挡俯视图;Fig. 9 is a top view of the capacitive microphone chip without the diaphragm and the upper stop according to the second embodiment of the present invention;
图10为本实用新型第三实施例的电容式传声器芯片俯视图;Fig. 10 is a top view of the capacitive microphone chip of the third embodiment of the present invention;
图11为本实用新型第三实施例的电容式传声器芯片沿图AA虚线的剖面图;Fig. 11 is a sectional view of the capacitive microphone chip according to the third embodiment of the present invention along the dotted line AA in Fig.
图12为本实用新型第三实施例的电容式传声器芯片沿图BB虚线的剖面图;Fig. 12 is a sectional view of the capacitive microphone chip according to the third embodiment of the present invention along the dotted line BB in Fig.
图13为本实用新型第三实施例的电容式传声器芯片无振膜及上止挡俯视图。Fig. 13 is a top view of the capacitive microphone chip without the diaphragm and the upper stopper according to the third embodiment of the present invention.
具体实施方式 Detailed ways
本实用新型有多种不同形式的实施例,附图1-13所示为本实用新型三个优选实例,下面对这三个实例进行详细说明。The utility model has many different forms of embodiments, and three preferred examples of the utility model are shown in accompanying drawings 1-13, and these three examples are described in detail below.
实施例一Embodiment one
如图1-5所示为本实用新型的第一实施例,根据本实用新型的电容式传声器芯片包括:基底21;以及与基底21间隔第一预定距离的振膜25。所述振膜25以悬臂梁的方式固定在基底上。电容式传声器芯片还包括下止挡23,所述下止挡23位于所述振膜25下方或之下,用于限制所述振膜的位移量。所述下止挡23与基底21相连,所述下止挡23与所述振膜25具有第二预定距离,用于限制所述振膜的位移量。As shown in FIGS. 1-5 , the first embodiment of the present invention, the capacitive microphone chip according to the present invention includes: a
电容式传声器芯片还包括上止挡26,所述上止挡26设置在所述振膜25上方且固定于所述基底21,所述上止挡26与所述振膜25具有第三预定距离,用于限制所述振膜的位移量。The condenser microphone chip also includes an
在图中所示的实例中,电容式传声器芯片是一种振膜在上、背极在下的电容式传声器芯片结构,其所示为方形振膜,也可以为圆形或者其它形状。如图1-3所示,其特点为振膜一侧边缘固定,其它区域边缘自由,自由边缘有上止挡和下止挡;基底作为背极,自下而上为:基底21、振膜支撑22、下止挡23、上止挡支撑24、振膜25及上止挡26,另外还有下电极27、上电极28,振膜25边缘和基底21构成电容结构。In the example shown in the figure, the capacitive microphone chip is a capacitive microphone chip structure with the diaphragm on the top and the back electrode on the bottom. The diaphragm is shown as a square diaphragm, but it can also be circular or other shapes. As shown in Figure 1-3, its feature is that the edge of one side of the diaphragm is fixed, and the edge of the other area is free. The free edge has an upper stop and a lower stop; the base is used as the back pole, and from bottom to top are:
振膜支撑22与下止挡23和上止挡26间隔预定的距离,以便获得适当的限制所述振膜位移量的效果。如图3中所示,所述上止挡26包括:固定部分,固定部分用于将所述上止挡26通过上止挡支撑24固定于所述基底21;以及止挡部分,所述止挡部分用于限制所述振膜的位移量。更具体而言,上止挡26为大体板状结构,且所述上止挡26的固定部分固定于上止挡支撑24,而所述上止挡26的止挡部分从所述上止挡支撑24伸出。所述下止挡23在所述基底21上的投影与所述上止挡26的止挡部分在所述基底21上的投影至少部分重叠,或可以不重叠。The
如图1、3中所示,所述下止挡23可以位于所述振膜的边缘部分,而所述上止挡26的止挡部分可以位于所述振膜的边缘部分。As shown in FIGS. 1 and 3 , the
作为选择,所述上止挡26的止挡部分和所述下止挡23的位置是振膜在振动过程中振幅大体最大的区域或变形时变形量最大的区域。例如,如图1、5中所示,用于将振膜固定于基底21的振膜支撑22与下止挡23和上止挡26的止挡部分大体相对,即分别在振膜相对的两侧的边缘部分。Alternatively, the position of the stop portion of the
如图1中所示,振膜的振膜支撑22可以位于振膜边缘部分。所述振膜支撑22在基底上的位置可以是任何时当的位置,以及本领域所述技术人员公知的任何适当的位置。As shown in FIG. 1 , the diaphragm support 22 of the diaphragm may be located at an edge portion of the diaphragm. The position of the diaphragm support 22 on the base can be any appropriate position and any suitable position known to those skilled in the art.
基底21中心有贯通孔,为声孔29,如图4所示,声孔29为截头锥形,也可以是其它形状。基底为导电材料或包含导电材料层。There is a through hole in the center of the
如图5所示,基底21上表面固连有振膜支撑22、下止挡23、上止挡支撑24。振膜支撑22、下止挡23、上止挡支撑24在声孔上开口之外区域,其中一个或多个振膜支撑22位于声孔29上开口一侧,且距离开口边缘有预定的距离;一个或多个下止挡23、一个或多个上止挡支撑24位于声孔29上开口另一侧或几侧,且距离开口边缘有预定的距离。基底21上表面一侧,声孔上开口之外区域设有下电极27。As shown in FIG. 5 , a diaphragm support 22 , a
振膜25覆于声孔29之上,振膜25和基底21之间有作为第一预定距离的预定距离。振膜25一端固定于振膜支撑22上表面,另一端或几端悬浮于下止挡23之上,振膜25与振膜下止挡23之间有作为第二预定距离的微小间隙。振膜25边缘部分有复数个小孔30,小孔30分部在声孔29上开口在振膜25上投影之外,在振膜支撑22区域无小孔。振膜为导电材料或包含导电材料层。在支撑22区域的振膜25之上固结上电极28。The
上止挡26固定于上止挡支撑24之上,其边缘部分,即止挡部分伸出覆于振膜边缘,上止挡26和振膜之间有预先设定的作为第三预定距离的微小间距。上止挡支撑24可位于振膜25区域之外,也可位于振膜25区域之内,图中为位于振膜25之外的情况。The
振膜25边缘与基底21形成电容,振膜25除在振膜支撑22处固定外,其它的区域处于自由悬浮状态,在自由的一侧或几侧的振膜的边缘有下止挡23和上止挡26的止挡部分限制,限制振膜的上下振动或变形范围。当在上电极28、下电极27上加工作电压后,振膜和基底由于静电吸引,振膜自由端变形较大,将搭到下止挡23上,下止挡23起到支撑作用;上止挡26限制振膜受到冲击或者变形过大,保证振膜25的可靠性。振膜25一边固定,其余各边自由,振膜25内部不存在残余应力,具有良好的振动性能,提高其灵敏度。The edge of the
实施例二Embodiment two
如图6-9所示为本实用新型的第二实施例,下面仅仅描述与第一实施例中的不同部分。The second embodiment of the present utility model is shown in Fig. 6-9, and only the different parts from the first embodiment will be described below.
电容式传声器芯片包括悬梁32,所述悬梁32的一端与所述振膜相连,且所述悬梁32的另一端位于所述下止挡23上方或之上,通过所述下止挡23限制所述另一端的位移量,限制所述振膜的位移量。下止挡23可以与所述悬梁32的另一端连接或者与基底21连接。The condenser microphone chip includes a
在图6中,所述悬梁32位于所述振膜之内。作为选择,所述悬梁32可以位于所述振膜之外,即悬梁的一端与振膜的外边缘相连,另一端位于所述下止挡23上方或之上。此外,悬梁32可以是任何合适结构的悬梁,例如,直线状的梁,曲线状的梁,多个分梁形成的组合梁(如图6中所示),或直线状的梁和曲线状的梁的组合。In FIG. 6, the
图中所示的电容式传声器芯片是一种振膜在上、背极在下的电容式传声器芯片结构,其所示为方形振膜,也可以为圆形或者其它形状。如图6-8所示,振膜一侧边缘固定,其它区域边缘自由,自由边缘有悬梁结构,悬梁结构下有下止挡,振膜边缘有上止挡;基底作为背极,自下而上为:基底21、振膜支撑22、下止挡23、上止挡支撑24、振膜25、悬梁支撑3 1、悬梁32及上止挡26,另外还有下电极27、上电极28,振膜25边缘和基底21构成电容结构。The capacitive microphone chip shown in the figure is a capacitive microphone chip structure in which the diaphragm is on top and the back electrode is on the bottom. It is shown as a square diaphragm, which can also be circular or other shapes. As shown in Figure 6-8, the edge of one side of the diaphragm is fixed, and the edge of the other area is free. The free edge has a cantilever beam structure. There is a lower stop under the cantilever beam structure, and an upper stop on the edge of the diaphragm. Above are:
基底21中心有贯通孔,为声孔29,如图4所示,声孔29为截头锥形,也可以是其它形状。基底为导电材料或包含导电材料层。There is a through hole in the center of the
如图9所示,基底21上表面固连有振膜支撑22、下止挡23、上止挡支撑24。振膜支撑22、下止挡23、上止挡支撑24在声孔上开口之外区域,其中一个或多个振膜支撑22位于声孔29上开口一侧,且距离开口边缘有预定的距离;一个或多个下止挡23、一个或多个上止挡支撑24位于声孔29上开口另一侧或几侧,且距离开口边缘有预定的距离。基底21上表面一侧,声孔上开口之外区域设有下电极27。As shown in FIG. 9 , a
振膜25覆于声孔29之上,振膜25和背极21之间有预定距离。振膜25一端固定于振膜支撑22上表面,在振膜的另一端或几端有悬梁结构,悬梁结构包括悬梁支撑31和悬梁32,悬梁支撑31悬浮于下止挡23之上,悬梁支撑31与振膜下止挡23之间有微小间隙。振膜25边缘部分有复数个小孔30,小孔30分布在声孔29上开口在振膜25上投影之外区域,在振膜支撑22区域无小孔。振膜为导电材料或包含导电材料层。与支撑22固定区域的振膜25之上固结上电极28。The
上止挡26固定于上止挡支撑24之上,其边缘伸出覆于振膜边缘,上止挡26和振膜之间有预先设定的微小间距。上止挡支撑24可位于振膜25区域之外,也可位于振膜25区域之内,图中为位于振膜25之外的情况。The
振膜25边缘与基底21形成电容,振膜25除在支撑22处固定外,其它的区域在自由悬浮,在自由端的一侧或几侧的悬梁支撑31下有下止挡23,振膜自由端边缘有上止挡26限制,固定振膜的上下状态。当在上电极28、下电极27上加工作电压后,振膜和基底由于静电吸引,振膜自由端变形较大,悬梁支撑31将搭到下止挡23上,下止挡23起到支撑作用;上止挡26限制振膜受到冲击或者变形过大,保证振膜25的可靠性。振膜25一端固定,其余各端自由,振膜25内部不存在残余应力,且自由端靠悬梁结构支撑,振动时变形主要集中在悬梁上,具有良好的振动性能,提高其灵敏度。The edge of the
实施例三Embodiment Three
如图10-13所示,在实施例三中,除了与上述第一和第二实施例的电容式传声器芯片的相同部分之外,在根据实施例三的电容式传声器芯片中,振膜支撑22位于所述振膜之外,所述振膜通过悬梁33在所述振膜之外固定于所述基底。As shown in Figures 10-13, in the third embodiment, except for the same part as the condenser microphone chip of the above-mentioned first and second embodiments, in the condenser microphone chip according to the third embodiment, the diaphragm supports 22 is located outside the diaphragm, and the diaphragm is fixed to the base by
此外,悬梁33可以是任何合适结构的悬梁,例如,直线状的梁,曲线状的梁,多个分梁形成的组合梁,或直线状的梁和曲线状的梁的组合。In addition, the
图10-13所示的电容式传声器芯片是一种振膜在上、背极在下的电容式传声器芯片结构,其所示为方形振膜,也可以为圆形或者其它形状。如图10-12所示,振膜通过引出悬梁固定,其它区域边缘自由,自由边缘有悬梁结构,悬梁结构有下止挡支撑,振膜边缘有上止挡;基底作为背极,自下而上为:基底21、振膜支撑22、下止挡23、上止挡支撑24、振膜25、悬梁支撑31、悬梁32、引出悬梁33及上止挡26,另外还有下电极27、上电极28,振膜25边缘和基底21构成电容结构。The capacitive microphone chip shown in Fig. 10-13 is a capacitive microphone chip structure in which the diaphragm is on top and the back electrode is on the bottom. It is shown as a square diaphragm, which can also be circular or other shapes. As shown in Figure 10-12, the diaphragm is fixed by leading out the suspension beam, and the edges of other areas are free. The free edge has a suspension beam structure. Above are:
基底21中心有贯通孔,为声孔29,如图4所示,声孔29为截头锥形,也可以是其它形状。基底为导电材料或包含导电材料层。There is a through hole in the center of the
如图13所示,基底21上表面固连有振膜支撑22、下止挡23、上止挡支撑24。振膜支撑22、下止挡23、上止挡支撑24在声孔上开口之外区域,其中一个振膜支撑22位于声孔29上开口一侧,且距离开口边缘有预定的距离;一个或多个下止挡23、一个或多个上止挡支撑24位于声孔29上开口另一侧或几侧,且距离开口边缘有预定的距离。基底21上表面一侧,声孔上开口之外区域设有下电极27。As shown in FIG. 13 , a
振膜25覆于声孔29之上,振膜25和背极21之间有预定距离。振膜25一侧通过引出悬梁33固定于振膜支撑22上表面,在振膜的另一端或几端有悬梁结构,悬梁结构包括悬梁支撑31和悬梁32,悬梁支撑31悬浮于下止挡23之上,悬梁支撑31与振膜下止挡23之间有微小间隙。振膜25边缘部分有复数个小孔30,小孔30分部在声孔29上开口在振膜25上投影之外,在振膜支撑22区域无小孔。振膜为导电材料或包含导电材料层。与支撑22固定区域的振膜25之上固结上电极28。The
上止挡26固定于上止挡支撑24之上,其边缘伸出覆于振膜边缘,上止挡26和振膜之间有预先设定的微小间距。上止挡支撑24可位于振膜25区域之外,也可位于振膜25区域之内,图中为位于振膜25之外的情况。The
振膜25边缘与基底21形成电容,振膜25除通过引出悬梁33在支撑22处固定,其它的区域自由悬浮,在自由端的一侧或几侧的悬梁支撑31下有下止挡23,振膜自由端边缘有上止挡26限制,限制振膜的上下振动或变形量。当在上电极28、下电极27上加工作电压后,振膜和基底由于静电吸引,振膜自由端变形较大,悬梁支撑31将搭到下止挡23上,下止挡23起到支撑作用;上止挡26限制振膜受到冲击或者变形过大,保证振膜25的可靠性。振膜25通过引出悬梁33固定,其余各端自由,振膜25内部不存在残余应力,且自由端靠悬梁结构支撑,振动时变形主要集中在悬梁上,具有良好的振动性能,提高其灵敏度。The edge of the
上述各实施例中,振膜支撑22与振膜25可一体形成,这种情况,振膜25为包含导电层的复合膜,在振膜支撑22区域只有绝缘层。下止挡23与振膜25可一体形成,下止挡23与基底21有预定的微小间距,这种情况,振膜为包含导电层的复合膜,在下止挡区域只有绝缘层。上止挡26与上止挡支撑24可一体形成,为绝缘材料。In the above embodiments, the
即,振膜支撑22可以通过在振膜25下面一体形成的部分代替,下止挡23可与振膜25一体形成,上止挡支撑24可由从上止挡26向下一体延伸的部分代替。That is, the
此外,除了上述上止挡26和下止挡23的布置方式之外,上止挡26和下止挡23可以设置在任何其它合适的位置,只要能够限制振膜25的变形或振动幅度即可。In addition, in addition to the arrangement of the
工艺实现:Process realization:
下面描述本实用新型的电容式传声器芯片的制造方法。The manufacturing method of the condenser microphone chip of the present invention will be described below.
本实用新型传声器芯片由MEMS(Micro-eletro-mechanical system)加工工艺制作而成,可以有多种工艺实施方案,下面是一种具体工艺步骤。The microphone chip of the utility model is made by MEMS (Micro-eletro-mechanical system) processing technology, and can have multiple technological implementation schemes, the following is a kind of specific technological steps.
根据本实用新型的三种实施方式的图1至13所示的电容式传声器芯片的制造方法如下:The manufacturing method of the capacitive microphone chip shown in Figures 1 to 13 according to three embodiments of the present invention is as follows:
1、选用低阻双面抛光硅片作为基底21,在硅片的第一侧生长2.5μmPSG、LTO、TEOS氧化硅层作为牺牲层、支撑层、止挡层;1. Select a low-resistance double-sided polished silicon wafer as the
2、用LPCVD方法在硅片两侧生长3000的氮化硅薄膜;2. Use LPCVD method to grow 3000 on both sides of the silicon wafer silicon nitride film;
3、用反应离子刻蚀的方法局部去掉硅片第一侧氮化硅薄膜,保留振膜支撑、下止挡、上止挡处氮化硅;局部刻蚀第二侧氮化硅薄膜,被刻蚀的区域将作为腐蚀硅片的窗口;3. Use reactive ion etching to partially remove the silicon nitride film on the first side of the silicon wafer, and retain the silicon nitride at the diaphragm support, lower stop, and upper stop; partially etch the silicon nitride film on the second side to be The etched area will serve as a window for etching the silicon wafer;
4、在硅片的第一侧继续生长0.5μm微米PSG、LTO、TEOS氧化硅层;4. Continue to grow 0.5 μm micron PSG, LTO, TEOS silicon oxide layer on the first side of the silicon wafer;
5、用LPCVD的方法在硅片两侧生长2μm厚的低应力多晶硅,并通过注入或者扩散的方法形成N型或者P型的多晶硅层;5. Grow 2 μm thick low-stress polysilicon on both sides of the silicon wafer by LPCVD, and form an N-type or P-type polysilicon layer by implantation or diffusion;
5、用反应离子刻蚀的方法刻出第一侧多晶硅上所设计的图形,形成振膜结构;5. Use the method of reactive ion etching to carve out the pattern designed on the polysilicon on the first side to form the diaphragm structure;
6、在硅片的第一侧再生长0.5微米PSG、LTO、TEOS氧化硅层;6. Re-grow a 0.5 micron PSG, LTO, TEOS silicon oxide layer on the first side of the silicon wafer;
7、用LPCVD的方法在硅片两侧生长1μm微米厚的低应力多晶硅;7. Use LPCVD to grow 1 μm thick low-stress polysilicon on both sides of the silicon wafer;
8、用反应离子刻蚀的方法刻出第一侧多晶硅层上所设计的图形,形成上止挡形状;8. Carve out the designed pattern on the polysilicon layer on the first side by reactive ion etching to form an upper stopper shape;
9、用HF溶液腐蚀透正面氧化硅到硅基底;9. Use HF solution to etch through the front silicon oxide to the silicon substrate;
10、用溅射、蒸发或者电镀的方法在硅片第一侧制作上金属电极和下金属电极;10. Make the upper metal electrode and the lower metal electrode on the first side of the silicon wafer by sputtering, evaporation or electroplating;
11、保护硅片第一侧,用KOH溶液先去掉第二侧多晶硅层,然后通过体硅腐蚀腐蚀基底,腐蚀到氧化硅停止,以形成声孔;11. To protect the first side of the silicon wafer, first remove the polysilicon layer on the second side with KOH solution, and then corrode the substrate by bulk silicon etching until the silicon oxide stops to form acoustic holes;
12、用HF溶液通过振膜的声孔、振膜边缘、振膜上的小孔以及振膜与上止挡间隙对氧化硅进行腐蚀,最后形成实用新型所述的结构。振膜支撑、下止挡及上止挡支撑区域的尺寸远大于所腐蚀的尺寸,通过合理控制腐蚀时间,保留足够大的振膜支撑、下止挡及上止挡支撑区域。12. Use HF solution to corrode silicon oxide through the sound hole of the diaphragm, the edge of the diaphragm, the small holes on the diaphragm, and the gap between the diaphragm and the upper stop, and finally form the structure described in the utility model. The size of the support area of the diaphragm support, the lower stop and the upper stop is much larger than the corroded size. By reasonably controlling the corrosion time, a sufficiently large support area of the diaphragm support, the lower stop and the upper stop is retained.
尽管通过上述实施例描述了本实用新型,但本实用新型不限于上述实施例。在不背离本实用新型的原理和构思的情况下可以对实施例进行修改,变更和替换。Although the present invention has been described by the above embodiments, the present invention is not limited to the above embodiments. The embodiment can be modified, changed and replaced without departing from the principle and idea of the present utility model.
例如,上述实施方式中的各种特征、结构和部件可以相互组合而形成新的实施方式,除非这种组合是不可行的。For example, various features, structures and parts of the above-mentioned embodiments can be combined with each other to form new embodiments, unless such combination is not feasible.
Claims (17)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102457801A (en) * | 2010-11-01 | 2012-05-16 | 北京卓锐微技术有限公司 | Differential MEMS (Micro-electromechanical Systems) capacitive microphone and preparation method thereof |
| CN101938682B (en) * | 2009-07-01 | 2012-12-26 | 歌尔声学股份有限公司 | MEMS microphone |
| CN104980858A (en) * | 2014-04-02 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | MEMS microphone and forming method thereof |
-
2008
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101938682B (en) * | 2009-07-01 | 2012-12-26 | 歌尔声学股份有限公司 | MEMS microphone |
| CN102457801A (en) * | 2010-11-01 | 2012-05-16 | 北京卓锐微技术有限公司 | Differential MEMS (Micro-electromechanical Systems) capacitive microphone and preparation method thereof |
| CN102457801B (en) * | 2010-11-01 | 2016-03-23 | 北京卓锐微技术有限公司 | Difference MEMS capacitive microphone and preparation method thereof |
| CN104980858A (en) * | 2014-04-02 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | MEMS microphone and forming method thereof |
| CN104980858B (en) * | 2014-04-02 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | The forming method of MEMS microphone |
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