CN201126924Y - Micro-air gap nano discharge protection assembly - Google Patents
Micro-air gap nano discharge protection assembly Download PDFInfo
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- CN201126924Y CN201126924Y CNU2007203103772U CN200720310377U CN201126924Y CN 201126924 Y CN201126924 Y CN 201126924Y CN U2007203103772 U CNU2007203103772 U CN U2007203103772U CN 200720310377 U CN200720310377 U CN 200720310377U CN 201126924 Y CN201126924 Y CN 201126924Y
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- electrode
- gap
- protection component
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- 239000002086 nanomaterial Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000011261 inert gas Substances 0.000 claims abstract description 8
- 239000002071 nanotube Substances 0.000 claims description 14
- 239000002070 nanowire Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 6
- 229910052756 noble gas Inorganic materials 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 24
- 238000007599 discharging Methods 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000003292 glue Substances 0.000 description 13
- 239000000843 powder Substances 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000002923 metal particle Substances 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005421 electrostatic potential Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000002285 radioactive effect Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example: N2 Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005453 pelletization Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
The utility model discloses a micro-air gap nanometer discharge protection component, which is characterized in that a substrate is coated with a plurality of layer bodies comprising two separated discharge electrodes, and a micro-gap between the two discharge electrodes forms a hollow air chamber to form a micro-air gap discharge protection component; the method is characterized in that: the discharge electrode contains nano material layers (nano materials), and the micro gap is filled with inert gas (noble gas), so that the characteristics of field emission, thermal stability, thermal conductivity and the like of the nano material layers under the inert atmosphere can be used for greatly reducing the trigger voltage (Vt) and the cut-off voltage (Cp) of the component.
Description
Technical field
The utility model relates to a kind of little air gap nanometer discharging protection component; be particularly related to a kind of electrode material and gas ingredients of focusing on for the electrical improvement of assembly; by applying, contain or the layer of nanomaterial of directly growing up at electrode end surface (or in electrode material); control discharging gap gas inside composition is with electrostatic discharge (ESD) protection ability and the effect of lifting subassembly to electronic product.
Background technology
Existing chip type overvoltage protection or discharging protection component; possesses the Electrostatic protection function; therefore be widely used on the electronic product miscellaneous; along with making rapid progress of science and technology; the volume of all electronic products all develops towards miniaturization, high-frequency and direction such as multi-functional; especially the circuit of electronics; for fear of because of electric voltage exception or static discharge (Electro-Static Discharge; ESD) cause the destruction of assemblies such as electronic equipment and cause damage, the protection design of static discharge more becomes the common basic demand of electronic equipment.
For making electronic product meet ability to bear for static discharge; industrial circle has been developed static discharge protection component miscellaneous at present; for example: thyristor (Silicon Controlled Rectifier; SCR); low-voltage triggers thyristor (Low Voltage Triggered SCR; LVTSCR); gate coupled transistor (Gate-CoupleNMOS; GCNMOS); gate grounding transistor (Ground-Gate NMOS; GGNMOS); instantaneous inhibition suppresses diode (Transient Voltage Suppress Diode; TVSD) ... Deng assembly, provide usefulness as the circuit protection design.
Existing overvoltage protection assembly, for example: surge absorber (Varistor), its Main Ingredients and Appearance is a zinc oxide, mainly utilize the nonlinear correlation of the resistance value of material itself and voltage to get in touch and protect working line, normally when small voltage, the resistance value of assembly is very high, so electric current is walked working line; But when voltage surpassed certain critical value, the resistance value of assembly significantly reduced, and when having big voltage to enter suddenly, electric current will flow through grounding assembly and run off.But this type assembly is because of having high capacity and being not suitable for being applied to the high-frequency electronic product, electric capacity is because of equivalent inductance (equivalent seriesinduction, ESL) produce an assembly oneself resonance frequency (self resonant frequency, SRF), when frequency during near SRF, assembly is influenced by ESL and ESR, causes and inserts the change of decreasing (Insertion Loss) characteristic.
And the static discharge process can be described as a kind of electrical performance behavior that belongs to the high electric current of instant high-voltage, take a broad view of the assembly infringement that static discharge causes, be that assembly itself is caused because big electric current is passed through mostly burn or the metal connection is ruined because of overheated melting, or the extremely thin gate pole oxidation layer problem of being punched by electrostatic potential, how to avoid the generation of these problems, for the dealer makes great efforts to study improved target.
The utility model content
Main purpose of the present utility model is; by a kind of little air gap nanometer discharging protection component is provided; propose the road of improvements at above-mentioned existing issue, big electric current is passed through, and assembly itself causes burns, the metal connection is ruined or gate oxide problem such as is punched by electrostatic potential and can be enhanced because of overheated melting.
The utility model is to adopt following technological means to realize:
A kind of little air gap nanometer discharging protection component is provided with a substrate, and the plate face of substrate is provided with electrode and connects with conductor and sparking electrode, and between sparking electrode and be formed with a microgap, described electrode is provided with layer of nanomaterial.
The layer of nanomaterial of aforesaid electrode is nano wire, nanotube or nano particle.
Be to be filled with inert gas between the microgap of former electrodes.
Aforesaid substrate must be formed by stacking up and down relatively for monobasal or by two substrates.
Aforesaid substrate is that two substrates is formed by stacking up and down relatively, and electrode is formed between the two substrates.
Aforesaid substrate is that two substrates is formed by stacking up and down relatively.
Little air gap nanometer discharging protection component of the present utility model; further on electrode, use layer of nanomaterial, reach and significantly reduce electrical component sex expression (Vt, Cp), and because the reliability of assembly is better; the application market face can be more extensive, more can meet the condition of frequency applications.
Little air gap nanometer discharging protection component of the present utility model; coating (containing) or directly grow up nano wire, nanotube, nano particle on the electrode of assembly ... etc. layer of nanomaterial; field emissivity (field emissionforce) principle by layer of nanomaterial reaches trigger voltage (Vt), the cut-ff voltage (Vc) that reduces assembly, and lifting subassembly antistatic capacity and reliability.
Little air gap nanometer discharging protection component of the present utility model utilizes the electrode of gap (gap) two ends and nanotube, the nano wire that the concave part branch is directly grown up ... launch as point discharge or field etc. layer of nanomaterial.Because the electrode area of general assembly can significantly reduce the trigger voltage (Vt) and the cut-ff voltage (Vc) of assembly greatly with the field emissivity (field emission force) that uses layer of nanomaterial, can overcome simple use cutting mode and shorten interelectrode distance or utilize the atmospherical discharges mode to reduce the bottleneck and the limit of trigger voltage (Vt) and cut-ff voltage (Vc).
Little air gap nanometer discharging protection component of the present utility model; utilize the nano level metal powder (for example: nano level gold to prepare electrode glue; silver; platinum; palladium; copper; iron; cobalt; nickel ... Deng metal dust; derive metal alloy powders or metal mixture) as electrode material; the effect of nano level metal powder: (one) this nano level metal powder can be used as direct growth nano wire; nano tube catalyst; mode becomes longer nano wire or nanotube thus, can reduce significantly with the resistance value of electrode tip that (this method is to utilize the nano-sized metal particles in the electrode glue to make the directly long nanotube of catalyst; nano wire ... Deng).(2) this nano level metal powder electrode glue can make electrode conductivuty promote, and (this method is directly to use the prepared electrode glue of nano metal particles and no longer grow up nano wire, nanotube as most advanced and sophisticated radioactive source also can to utilize nano metal particles on the electrode surface simultaneously ... Deng).
Little air gap nanometer discharging protection component of the present utility model; because the interelectrode gap of assembly (gap) is as medium with air; the medium coefficient of air is minimum; it is minimum that this advantage can make the capacitance of assembly reduce to, so little air gap nanometer discharging protection component of the present utility model can be wider in the range of application of front end.
Little air gap nanometer discharging protection component of the present utility model; interelectrode gap (gap) can utilize the Gas Exchange mode to fill inert gas (noble gas; for example: N2, He, Ne, Ar ... Deng); make an easier emission, the lifting layer of nanomaterial field emissivity (field emission force) of under inert gas atmosphere, producing of layer of nanomaterial.
Little air gap nanometer discharging protection component of the present utility model, the material of inserting in the gap of side is the oxidation aluminium glue, by producing finer and close combining with aluminium oxide strip own behind the sintering, makes assembly better in reliability test reliability.
In sum, the little air gap nanometer of the utility model discharging protection component has following advantage:
1. interelectrode field-effect transistor.
2. its conductivity of nm-class conducting wire also can be by filling the metal decision.
3. make various energy gap by changing diameter.
4. can bear high current strength.
5. excellent conductivity, thermal conductivity have solved the heat radiation and the thermal stability problems of assembly.
Description of drawings
Fig. 1 is a section of structure of the present utility model;
Fig. 2 is a local amplification profile of the present utility model;
Fig. 3 A is first diagrammatic sketch of another embodiment manufacturing step of the present utility model;
Fig. 3 B is second diagrammatic sketch of another embodiment manufacturing step of the present utility model;
Fig. 3 C is the 3rd diagrammatic sketch of another embodiment manufacturing step of the present utility model.
Embodiment
Below in conjunction with accompanying drawing specific embodiment of the utility model is illustrated:
Little air gap nanometer discharging protection component of the present utility model as shown in Figure 1, comprising: 10, one of ceramic substrates connect with conductor 11,12 first termination electrode that is positioned at substrate one side both side ends; One to being positioned at second termination electrode connection conductor 13,14 of both side ends on the substrate another side; Described second termination electrode of being located on the substrate surface connects with first resilient coating 15 between the conductor; The main discharge electrode 17,18 that both ends are connected with described second termination electrode respectively to separating with the hollow gas chamber of a microgap 16; One be coated on the main discharge electrode conductor on second resilient coating 19; One is coated on main discharge electrode part second termination electrode and connects the protective layer 20 of using conductor; One to being located at the substrate both ends of the surface and connecting the termination electrode 21,22 of first, second termination electrode; And, a scolding tin interface layer 23,24 to being located at the termination electrode outside.
Above-mentioned little air gap nanometer discharging protection component; wherein said main discharge electrode 17,18 contains layer of nanomaterial (nano materials) 171,181; this layer of nanomaterial (nano materials) is applied or directly grow up nano wire, nanotube, nano particle ... mode etc. layer of nanomaterial is formed at main discharge electrode 17,18, and is able to this layer of nanomaterial (nano materials) 171,181 as a point discharge or an emission.Be packed into 25 (as shown in Figure 2) of inert gas (noble gas) in 16 of the microgaps of 17,18 of sparking electrodes.
Little air gap nanometer discharging protection component of the present utility model; owing on electrode 17,18, use layer of nanomaterial; can reach trigger voltage (Vt), the cut-ff voltage (Vc) that reduces assembly, lifting subassembly antistatic capacity and reliability by field emissivity (the field emission force) principle of layer of nanomaterial.And, because the electrode area of its general assembly is big and use the field emissivity (field emission force) of layer of nanomaterial can significantly reduce the trigger voltage (Vt) and the cut-ff voltage (Vc) of assembly, shortens interelectrode distance or utilize the atmospherical discharges mode to reduce the bottleneck and the limit of trigger voltage (Vt) and cut-ff voltage (Vc) so can overcome existing simple use cutting mode.
Please refer to Fig. 3 A, Fig. 3 B, Fig. 3 C, be another embodiment of little air gap nanometer discharging protection component of the present utility model, the manufacturing step of this embodiment comprises:
Step 1: prior to cutting groove 33,34 (as shown in Figure 3A) on substrate 31,32 or the strip;
Step 2: republish nano level metal electrode glue 35,36 (shown in Fig. 3 B);
Step 3: will finish the substrate 31,32 or the strip that print electrode and send into growth nano wire, nanotube, nano particle in the atmosphere furnace (hydrocarbon) ... etc. layer of nanomaterial on electrode;
Step 4: with the hole of side with glass cement ... isocolloid 37,38 will fill up (shown in 3C figure); again upper and lower covers is repeatedly pressed in the hydraulic pressure mode; repeatedly press the back pelletizing, take off ester, sintering, again in this external coat polymers diaphragm (coating), end silver, electroplate ... Deng.
Above-mentioned step 3 and inessential, also merely with nano level metal electrode glue as electrode and the layer of nanomaterial of not growing up.
The above-mentioned material of inserting in the gap of side also can be the oxidation aluminium glue, by producing finer and close combining with aluminium oxide strip own behind the sintering, makes assembly better in reliability test reliability.
The above-mentioned nano level metal powder that utilizes prepares electrode glue, for example nano level gold, silver, platinum, palladium, copper, iron, cobalt, nickel ... Deng metal dust, derive metal alloy powders or metal mixture, prepare electrode glue as electrode material with the nano level metal powder, this nano level metal powder can be used as direct growth nano wire, nano tube catalyst, become longer nano wire or nanotube by this mode, can reduce significantly with the resistance value of electrode tip that (the method is to utilize the nano-sized metal particles in the electrode glue to make the directly long nanotube of catalyst, nano wire ... Deng).Nano level metal powder electrode glue can also make electrode conductivuty promote, and (this method is directly to use the prepared electrode glue of nano metal particles and no longer grow up nano wire, nanotube as most advanced and sophisticated radioactive source also can to utilize nano metal particles on the electrode surface simultaneously ... Deng).
Therefore; little air gap nanometer discharging protection component of the present utility model; because the interelectrode gap of assembly (gap) is as medium with air; the medium coefficient of air is minimum; it is minimum that this advantage can make the capacitance of assembly reduce to, so little air gap nanometer discharging protection component of the present utility model can be wider in the range of application of front end.Moreover, interelectrode microgap (gap) 16 can utilize the Gas Exchange mode to fill inert gas (noble gas, for example: N2, He, Ne, Ar ... Deng), make an easier emission, the lifting layer of nanomaterial field emissivity (fieldemission force) of under inert gas atmosphere, producing of layer of nanomaterial.
Little air gap nanometer discharging protection component of the present utility model; use layer of nanomaterial by electrode, can reach and significantly reduce electrical component sex expression (Vt, Cp), and because the reliability of assembly is better; the application market face can be more extensive, more can meet the condition of frequency applications.
It should be noted that at last: above embodiment only in order to the explanation the utility model and and the described technical scheme of unrestricted the utility model; Therefore, although this specification has been described in detail the utility model with reference to each above-mentioned embodiment,, those of ordinary skill in the art should be appreciated that still and can make amendment or be equal to replacement the utility model; And all do not break away from the technical scheme and the improvement thereof of the spirit and scope of utility model, and it all should be encompassed in the middle of the claim scope of the present utility model.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007203103772U CN201126924Y (en) | 2007-12-12 | 2007-12-12 | Micro-air gap nano discharge protection assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007203103772U CN201126924Y (en) | 2007-12-12 | 2007-12-12 | Micro-air gap nano discharge protection assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201126924Y true CN201126924Y (en) | 2008-10-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007203103772U Expired - Fee Related CN201126924Y (en) | 2007-12-12 | 2007-12-12 | Micro-air gap nano discharge protection assembly |
Country Status (1)
| Country | Link |
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| CN (1) | CN201126924Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102224649A (en) * | 2008-11-26 | 2011-10-19 | 株式会社村田制作所 | Esd protection device and manufacturing method thereof |
| CN102792534A (en) * | 2010-02-25 | 2012-11-21 | 釜屋电机株式会社 | Electrostatic protection component and manufacturing method thereof |
| CN116266968A (en) * | 2021-12-17 | 2023-06-20 | 大毅科技股份有限公司 | Static suppressor and manufacturing method thereof |
-
2007
- 2007-12-12 CN CNU2007203103772U patent/CN201126924Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102224649A (en) * | 2008-11-26 | 2011-10-19 | 株式会社村田制作所 | Esd protection device and manufacturing method thereof |
| CN102224649B (en) * | 2008-11-26 | 2015-04-01 | 株式会社村田制作所 | ESD protection device and manufacturing method thereof |
| CN102792534A (en) * | 2010-02-25 | 2012-11-21 | 釜屋电机株式会社 | Electrostatic protection component and manufacturing method thereof |
| CN102792534B (en) * | 2010-02-25 | 2014-12-03 | 釜屋电机株式会社 | Electrostatic protection component and manufacturing method thereof |
| CN116266968A (en) * | 2021-12-17 | 2023-06-20 | 大毅科技股份有限公司 | Static suppressor and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081001 Termination date: 20111212 |