CN201097058Y - LCD TFT base plate - Google Patents
LCD TFT base plate Download PDFInfo
- Publication number
- CN201097058Y CN201097058Y CNU2007200755308U2007200755308U CN200720075530U CN201097058Y CN 201097058 Y CN201097058 Y CN 201097058Y CN U2007200755308U2007200755308 U CNU2007200755308U2007200755308 U CN U2007200755308U2007200755308U CN 200720075530 U CN200720075530 U CN 200720075530U CN 201097058 Y CN201097058 Y CN 201097058Y
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- liquid crystal
- crystal display
- metal
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- Expired - Lifetime
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- 239000002184 metal Substances 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 37
- 238000009413 insulation Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 230000008439 repair process Effects 0.000 abstract description 5
- 238000012423 maintenance Methods 0.000 abstract description 4
- 238000005067 remediation Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The utility model discloses a liquid crystal display TFT base plate which can easily repair the short-circuit of the crossing points. The liquid crystal display TFT base plate comprises a first metal layer and a second metal layer, wherein an insulation layer is arranged between the first metal layer and the second metal layer, transversely distributed grid lines and longitudinally distributed light shading lines are arranged in the first metal layer, longitudinally distributed data lines are arranged in the second metal layer, the light shading lines in each pixel area is communicated with the grid lines, and the adjacent light shading lines in the adjacent pixel areas are communicated along the direction of the grid lines through a short wire. The liquid crystal display TFT base plate has the advantages that the remediation efficiency, and the success ratio for maintenance and the stability of the liquid crystal display TFT base plate are effectively improved, the maintenance cost is reduced, and the image display quality is improved.
Description
Technical field
The utility model relates to a kind of liquid crystal display cells, and especially a kind of liquid crystal display TFT substrate can be repaired and normally use after the place, data line point of crossing of the grid line of the first metal layer on the substrate or the memory capacitance concentric line and second metal level is short-circuited.
Background technology
LCD is to utilize the variation that is clipped in electric field intensity on the liquid crystal molecule, and the power that changes the orientation control printing opacity of liquid crystal molecule is come display image.In general, the layer of liquid crystal molecule of filling in the box that complete display panels must be formed by backlight module, polaroid, TFT infrabasal plate and CF upper substrate and by their two substrates constitutes.A large amount of pixel electrodes is arranged on the TFT substrate, and voltage swing on the pixel electrode and break-make are by the grid that is connected with horizontal grid line, the source signal control that is connected with the longitudinal data line.ITO public electrode on the CF upper substrate and the electric field intensity change modulates between the ITO pixel electrode on the infrabasal plate the orientation of liquid crystal molecule.On the TFT substrate parallel with grid line and be in be used for keeping next signal and arrive with the memory capacitance that can form between the memory capacitance concentric line of one deck and the ITO pixel electrode before the state of liquid crystal molecule.
In the manufacture process of TFT substrate, technologic any deviation a little all may cause defective to display panel, or the pollution on the opening circuit of lead, short circuit or the pixel electrode, influence the image quality of liquid crystal display, memory capacitance concentric line or grid line and the data line point of crossing synoptic diagram that is short-circuited that is shown in Figure 1, therefore, before dispatching from the factory, liquid crystal panel all can consider defective is repaired, to reduce production costs.
Most of TFT base board defects all can effectively be repaired by the method that cut and laser bonding combine, but the at present disclosed method that can efficiently repair about the short circuit that scan signal line or memory capacitance concentric line and drive signal line point of crossing are located also is not a lot, general method commonly used is to utilize laser that short circuit is partly cut off, and repairs line with Laser CVD method along former line growth then.Figure 2 shows that the traditional recovery scenario synoptic diagram after the place, point of crossing is short-circuited; laterally grid line 21 occurs circuit defect 50 with longitudinal data line 23 at crossover location; utilize laser data line 23 to be cut off in 112 positions, grid line 21 both sides; position 113 will protect insulation course to utilize laser boring near cut-off point 112; utilize Laser CVD method to repair line 111 again along former line growth; in extremely limited space, be difficult in this case guarantee can not cause other short circuit when line 111 is repaired in growth; and this method is also powerless after becoming box.
Fig. 3 is the planar line design concept figure that sweep trace and signal wire point of crossing place is repaired when being short-circuited that proposes in the US5852482 patent, its memory capacitance is a common gate configuration, controlling grid scan line 14 links to each other with memory capacitance public pole 16 with 15, directly be deposited on the glass basis, below controlling grid scan line 14 linearly, and top controlling grid scan line 15 is recessed down, 12 are designated as grid, signal wire 26 is vertical with sweep trace 14, has insulation course SiNx to separate between two-layer; Source electrode 22 and the overlapping grid both sides that are deposited on of the drain electrode that is connected with pixel electrode 222 25 symmetries correspond to diagram X2 and X1 mark position respectively, and amorphous Si and n+ amorphous Si layer are between grid and source, the drain electrode; Pixel electrode ITO is deposited upon the superiors, and is insulated by protective seam between the source, drain electrode layer.When grid sweep trace 14, can disconnect with laser from signal wire both sides Z1 and Z2 position during in the short circuit of D place with signal wire 26, do not influence the transmission of sweep signal again; If short circuit occurs at E position infall, then utilize laser to disconnect from Y1 and Y2, although at this moment scanning gate signal can pass through to next pixel electrode from grid sweep trace 14, but this thin film transistor (TFT) applies signal can't for its corresponding pixel electrode owing to lacked signal, thereby caused display defect, the configuration of Chong Fuing has occupied bigger pixel region area in addition, has influenced the aperture opening ratio of display panels again.
Although influencing in the middle of the image quality of display panels, the short circuit of position, point of crossing is an aspect of its defective, but up till now it is repaired the method that adopts, perhaps operation is numerous and diverse, remediation efficiency and quality all have much room for improvement, perhaps the line design complexity influences aperture opening ratio, can't satisfy production requirement.
The utility model content
Technical problem to be solved in the utility model provides a kind of liquid crystal display TFT substrate of simple easy for rehabilitating crosspoint short circuit.
In order to solve the problems of the technologies described above liquid crystal display TFT substrate of the present utility model, include the first metal layer and second metal level, be provided with insulation course between the first metal layer and second metal level, the shading line that is provided with the grid line of laterally arranging in the first metal layer and vertically arranges, be provided with the data line of vertically arranging in second metal level, shading line described in each pixel region is communicated with grid line, and is communicated with by a short metal wire along the adjacent shading line of adjacent two pixel regions of grid line direction.
Metal conducting layer can be the good materials of electric conductivity such as Al, Ta, Cr for the good material metal conductive layer of electric conductivities such as Al, Ta, Cr; Insulating layer material can be SiO
2, SiN
xOxide Deng Si; Semiconductor layer between gate electrode and source, the drain electrode layer is by amorphous Si of lower floor and upper strata n
+Amorphous Si layer constitutes, wherein n
+Amorphous Si layer provides conducting channel for source electrode and drain electrode.
The utility model also provides another kind of liquid crystal display TFT substrate, include the first metal layer and second metal level, be provided with insulation course between the first metal layer and second metal level, the shading line that is provided with the grid line of laterally arranging and memory capacitance concentric line in the first metal layer and vertically arranges, be provided with the data line of vertically arranging in second metal level, shading line described in each pixel region is communicated with the memory capacitance concentric line, and be not communicated with, and be communicated with by a short metal wire along the adjacent shading line of adjacent two pixel regions of memory capacitance concentric line direction with grid line.
Metal conducting layer can be the good materials of electric conductivity such as Al, Ta, Cr; Insulating layer material can be SiO
2, SiN
xOxide Deng Si; Semiconductor layer between gate electrode and source, the drain electrode layer is by amorphous Si of lower floor and upper strata n
+Amorphous Si layer constitutes, wherein n
+Amorphous Si layer provides conducting channel for source electrode and drain electrode.
Liquid crystal display TFT substrate of the present utility model, only need be at ground floor metal wire (grid line, the memory capacitance concentric line) prepares the shading line in the deposition, shading line and grid line or memory capacitance concentric line are communicated with, and laterally the adjacent shading line of adjacent subpixels directly links to each other by short metal wire, like this when the data line of the grid line that is connected with the shading line or the memory capacitance concentric line and second metal level when infall is short-circuited, as long as it is cut off in the both sides, point of crossing of grid line or memory capacitance concentric line, the signal that transmits on the former circuit will be delivered to next pixel by the point of crossing that the shading line that is communicated with it and short metal wire are walked around with data line, thereby can make LCD operate as normal again.
This structure that only can carry out rehabilitating crosspoint short circuit simply with the method for cut, do not needing traditional LCD-TFT manufacturing process is advanced under the situation of new change, can improve the remediation efficiency of liquid crystal display TFT panel effectively, reduce maintenance cost greatly, improve the success ratio and the stability of maintenance, improve the picture display quality.
And this technology also can be implemented from the back side of LCD to repair after becoming box simply, thereby the line defect problem that makes crosspoint short circuit cause is solved efficiently.
Description of drawings
The synoptic diagram that memory capacitance concentric line or grid line and source electrode data line point of crossing place is short-circuited on Fig. 1 liquid crystal display TFT substrate;
Fig. 2. the traditional recovery scenario synoptic diagram after the place, point of crossing is short-circuited;
Fig. 3. the reparation synoptic diagram when comprising the line design of repairing line in the U.S. Pat 5852482 and being short-circuited at the place, point of crossing;
Fig. 4. the dot structure synoptic diagram of the liquid crystal display TFT substrate of no memory capacitance concentric line of the present utility model;
Fig. 5. the dot structure synoptic diagram that is provided with the liquid crystal display TFT substrate of memory capacitance concentric line of the present utility model;
Among the figure: 20.TFT 21. grid lines 23. data lines
24. shading line 27. short metal wire 222. pixel electrodes
31. memory capacitance concentric line
41. the point of crossing of memory capacitance concentric line and data line
42. the point of crossing of grid line and data line
43. the overlay region of pixel electrode and grid line
Embodiment
The utility model is described in further detail below in conjunction with drawings and the specific embodiments.
As shown in Figure 4, be according to first kind of liquid crystal display TFT substrate of the present utility model, be that grid line 21 forms the storage capacitor construction liquid crystal display TFT substrate with pixel electrode 222, structure memory capacitance concentric line is not set on the substrate of this structure, its aperture opening ratio can be bigger.And the size of aperture opening ratio is the key factor that influences the brightness and the design of panel, so this mode is used in the design of panel now mostly.20 is TFT, and 21 is grid line, and 23 is data line, 24 are shading line (it plays to a certain extent and alleviates because of closing the bad light leak problem that causes), 42 is the overlapping region of grid line and data line, and 43 overlay regions for pixel electrode and grid line promptly form the compensation memory capacitance, and 222 is pixel electrode.When shading line 24 is set, shading line 24 is communicated with grid line 21, and is communicated with by a short metal wire 27 along the adjacent shading line 24 of adjacent two pixel regions of grid line 21 directions.
When foreign ion or defective make grid line 21 and data line 23 be short-circuited at its 42 places, point of crossing, cut at 51 places of data line 23 both sides so that point of crossing 42 is disconnected from grid line 21 with laser, like this, the pulse voltage of grid line 21 is only walked around point of crossing 42 along 24 transmission of shading line, because of the line defect that point of crossing 42 places short circuit causes is promptly repaired.
As shown in Figure 5, be according to second kind of liquid crystal display TFT substrate of the present utility model, promptly form the liquid crystal display TFT substrate of storage capacitor construction by memory capacitance concentric line 31 and pixel electrode 222.Memory capacitance connects by memory capacitance concentric line 31 and separates with grid line 21 in this structure, and this helps improving the effect of driving, and this structure is all adopted at present a lot of liquid crystal displays.For the liquid crystal TFT substrate of this structure, the shading line that plays shaded effect is connected with memory capacitance concentric line 31, and is communicated with by a short metal wire 27 along the adjacent shading line 24 of adjacent two pixel regions of memory capacitance concentric line 31 directions.
When foreign ion or defective make data line and memory capacitance concentric line 31 be short-circuited at its 41 places, point of crossing, with laser juxtaposition district 41 is excised from the memory capacitance concentric line, like this, the signal of memory capacitance concentric line 31 is only walked around point of crossing 41 along 24 transmission of shading line, because of the line defect that point of crossing 41 places short circuit causes is repaired.
The metal conducting layer of above-mentioned liquid crystal display TFT substrate is the good materials of electric conductivity such as Al, Ta, Cr, and insulating layer material is SiO
2, SiN
xDeng the oxide of S i, the semiconductor layer between gate electrode and source, the drain electrode layer is by amorphous Si of lower floor and upper strata n
+Amorphous Si layer constitutes, wherein n
+Amorphous Si layer provides conducting channel for source electrode and drain electrode.
In sum; although the utility model is described by specific embodiment; right its is not limited only to this; any technician who is familiar with in association area; in not breaking away from spirit and scope of the present utility model; can change, therefore protection domain of the present utility model is appendedly applied for a patent the scope that requirement defines and is as the criterion when looking.
Claims (8)
1. liquid crystal display TFT substrate, include the first metal layer and second metal level, be provided with insulation course between the first metal layer and second metal level, the shading line that is provided with the grid line of laterally arranging in the first metal layer and vertically arranges, be provided with the data line of vertically arranging in second metal level, it is characterized in that: the shading line described in each pixel region is communicated with grid line, and is communicated with by a short metal wire along the adjacent shading line of adjacent two pixel regions of grid line direction.
2. liquid crystal display TFT substrate according to claim 1 is characterized in that: metal conducting layer is the good A1 of electric conductivity, Ta or Cr material.
3. liquid crystal display TFT substrate according to claim 1 is characterized in that: insulating layer material is the oxide of Si.
4. liquid crystal display TFT substrate according to claim 1 is characterized in that: the semiconductor layer between gate electrode and source, the drain electrode layer is by amorphous Si of lower floor and upper strata n
+Amorphous Si layer constitutes, wherein n
+Amorphous Si layer provides conducting channel for source electrode and drain electrode.
5. liquid crystal display TFT substrate, include the first metal layer and second metal level, be provided with insulation course between the first metal layer and second metal level, the shading line that is provided with the grid line of laterally arranging and memory capacitance concentric line in the first metal layer and vertically arranges, be provided with the data line of vertically arranging in second metal level, it is characterized in that: the shading line described in each pixel region is communicated with and is not communicated with grid line with the memory capacitance concentric line; And the adjacent shading line along adjacent two pixel regions of memory capacitance concentric line direction is communicated with by a short metal wire.
6. liquid crystal display TFT substrate according to claim 5 is characterized in that: metal conducting layer is the good Al of electric conductivity, Ta or Cr material.
7. liquid crystal display TFT substrate according to claim 5 is characterized in that: insulating layer material is the oxide of Si.
8. liquid crystal display TFT substrate according to claim 5 is characterized in that: the semiconductor layer between gate electrode and source, the drain electrode layer is by amorphous Si of lower floor and upper strata n
+Amorphous Si layer constitutes, wherein n
+Amorphous Si layer provides conducting channel for source electrode and drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200755308U2007200755308U CN201097058Y (en) | 2007-10-18 | 2007-10-18 | LCD TFT base plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200755308U2007200755308U CN201097058Y (en) | 2007-10-18 | 2007-10-18 | LCD TFT base plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201097058Y true CN201097058Y (en) | 2008-08-06 |
Family
ID=39924110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007200755308U2007200755308U Expired - Lifetime CN201097058Y (en) | 2007-10-18 | 2007-10-18 | LCD TFT base plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201097058Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101825814B (en) * | 2009-03-04 | 2012-05-30 | 北京京东方光电科技有限公司 | TFT (Thin Film Transistor)-LCD (Liquid Crystal Display) array baseplate and manufacturing method thereof |
| CN103810965A (en) * | 2012-11-07 | 2014-05-21 | 上海天马微电子有限公司 | Display device and defect repairing method of pixel unit thereof |
-
2007
- 2007-10-18 CN CNU2007200755308U2007200755308U patent/CN201097058Y/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101825814B (en) * | 2009-03-04 | 2012-05-30 | 北京京东方光电科技有限公司 | TFT (Thin Film Transistor)-LCD (Liquid Crystal Display) array baseplate and manufacturing method thereof |
| CN103810965A (en) * | 2012-11-07 | 2014-05-21 | 上海天马微电子有限公司 | Display device and defect repairing method of pixel unit thereof |
| CN103810965B (en) * | 2012-11-07 | 2016-08-17 | 上海天马微电子有限公司 | Display device and defect repairing method of pixel unit thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Effective date of abandoning: 20071018 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |