CN201068469Y - Flat surface magnetron sputtering target capable of prolonging target material service lifetime - Google Patents
Flat surface magnetron sputtering target capable of prolonging target material service lifetime Download PDFInfo
- Publication number
- CN201068469Y CN201068469Y CNU2007201491434U CN200720149143U CN201068469Y CN 201068469 Y CN201068469 Y CN 201068469Y CN U2007201491434 U CNU2007201491434 U CN U2007201491434U CN 200720149143 U CN200720149143 U CN 200720149143U CN 201068469 Y CN201068469 Y CN 201068469Y
- Authority
- CN
- China
- Prior art keywords
- target
- pole piece
- target material
- conductive pole
- adjusting pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013077 target material Substances 0.000 title abstract description 14
- 238000001755 magnetron sputter deposition Methods 0.000 title description 11
- 238000005477 sputtering target Methods 0.000 claims abstract description 30
- 230000003245 working effect Effects 0.000 claims description 16
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 230000002860 competitive effect Effects 0.000 abstract 1
- 230000005389 magnetism Effects 0.000 abstract 1
- 238000005240 physical vapour deposition Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The utility model relates to a magnetic controlling sputtering target which can enhance the utilization factor of target material and prolong the service life of the target material. The utility model is suitable for the physical vapor deposition magnetic controlling sputtering vacuum deposition technology. The magnetism controlling sputtering target comprises the target material, a target back plate, an insulating mat, a target cathode frame, a cathode baffle plate, a magnet and a magnetic guiding shoe adjusting mat, wherein, the uniformity of the surface magnetic field of the target material and the uniformity of a plasma body can be adjusted through the movable magnet and the magnetic guiding shoe adjusting mat to ensure that the speed rate of the target material etched by the plasma body is reduced and the difference etched by the front end and the middle part of the target material is reduced, therefore, the utilization factor of the target material is enhanced, the production cost of the product is greatly reduced, the production resource is saved, and the product competitive power is enhanced.
Description
Technical field
The utility model is applicable to a kind of magnetron sputtering target, particularly a kind of target plane magnetic controlled sputtering target in work-ing life that prolongs.
Background technology
Magnetron sputtering technique is widely used in material surface decoration, material surface modifying, multiple fields such as optics manufacturing, electronics.Magnetron sputtering target divides plane magnetic controlled sputtering target and cylindrical magnetron sputtering target from structure in current prior art, balance-dividing target and non-equilibrium target on the Distribution of Magnetic Field.Advantages such as it is simple that the used target of plane magnetic controlled sputtering target has processing, easy for installation are suitable for producing in batches the plated film product.Usually the material price of sputtering target material is very expensive, and as metal titanium, silver, platinum etc., this just makes production cost than higher undoubtedly.
In traditional technology, the magnetron sputtering membrane process as shown in Figure 1.Under vacuum state, when target 5 is applied in a negative potential, when being added positive potential by the workpiece of plated film, in target 5 place vacuum chambers, form electric field 1, in vacuum chamber, pour technology carrier gas (Ar) then, under certain pressure and temperature, can produce electric discharge phenomena between positive potential and the negative potential, electronics e moves along circular orbit, bump technology carrier gas (Ar) molecule, produce plasma discharge, the magnet on the magnetron sputtering target produces magnetic field 2 simultaneously, and magnetic field puts among the electric field, can strengthen vapour deposition and plasma discharge, positively charged ion in the plasma body flies to negative electrode, clashes into cathode surface under electric field and the action of a magnetic field, makes that the atom of cathode targets is sputtered attached on the anode surface.Wherein target cathode framework and cathode baffle are used to block the non-sputter area of target 5, make it not produce the plasma discharge effect, make the atom of cathode targets sputter like this to the direction that is not blocked, just formed the thin film of cathode material at anode surface (by the workpiece of plated film), thereby made that the workpiece on the anode is coated.But this moment the cathode surface plasma body the termination effects at homogeneity subject plasma electronics runway turning, at plasma electron runway two ends, plasma body is stronger, sputter is effective, it is many that sputtering target material is etched, and be etched lessly at sputtering target material middle part target, so just formed in the middle of the target and the uneven phenomenon of end etching, reduced the work-ing life of target, and target consumes the etching figure as shown in Figure 2.
The utility model technology is to be based upon on the basis of gas discharge characteristic under the vacuum condition, is application and development to magnetron sputtering technique.Change magneticstrength, the etching effect of pilot-gas discharge generation is the utility model technical issues that need to address.
The utility model content
The purpose of this utility model is at the problem inhomogeneous, that target utilization is low, work-ing life is short that is etched of sputtering target material in the existing magnetron sputtering technology, a kind of plane magnetic controlled sputtering target is provided, by adjusting the homogeneity in magnetron sputtering target magnetic field, adjust the plasma uniformity of target end surface, the speed difference that target end and middle part are etched reduces, so just make the difference of target etching of target end and middle part reduce, thereby prolong target work-ing life.
To achieve these goals, the utility model provides a kind of plane magnetic controlled sputtering target, comprises the target, target backboard, insulating mat and the target cathode framework that are stacked together successively, is arranged side by side one or more magnet; Between insulating mat and magnet, place one or more magnetic conductive pole piece adjusting pad.
The magnetic conductive pole piece adjusting pad can be arranged between target cathode framework and the magnet, perhaps between insulating mat and the target cathode framework, perhaps is provided with simultaneously at two places.
Further, when the magnetic conductive pole piece adjusting pad is arranged between target cathode framework and the magnet, the magnetic conductive pole piece adjusting pad can be fixed on the magnet upper surface, perhaps be fixed on the target cathode framework one side relative with described magnet, perhaps one or more magnetic conductive pole piece adjusting pad is set simultaneously, can staggered relativelyly also can be staggeredly placed on above-mentioned two surfaces.
Further, when the magnetic conductive pole piece adjusting pad is arranged between insulating mat and the target cathode framework, the magnetic conductive pole piece adjusting pad can be fixed on the target cathode framework, perhaps is fixed on the insulating mat, perhaps on above-mentioned two surfaces one or more magnetic conductive pole piece adjusting pad is set all.
The technical solution of the utility model has been improved the uneven defective of magnetic control spattering target etching, can improve the utilization ratio of target, prolongs its work-ing life.Described magnetron sputtering target also is applicable to Thin Film Transistor-LCD (Thin-film transistor liquid crystal display is called for short TFT-LCD) multi-target magnetic control sputtering coating equipment.
Description of drawings
Fig. 1 is magnetic control spattering target surface electronic movement locus and plasma body form principle schematic;
Fig. 2 is for using the preceding target etching state pattern sectional schematic diagram of the utility model;
Fig. 3 is the utility model embodiment 1 plane magnetic controlled sputtering target synoptic diagram;
Fig. 4 is the utility model embodiment 2 plane magnetic controlled sputtering target synoptic diagram;
Fig. 5 is the utility model embodiment 3 plane magnetic controlled sputtering target synoptic diagram;
Fig. 6 is the utility model embodiment 4 plane magnetic controlled sputtering target synoptic diagram;
Fig. 7 is the utility model embodiment 5 plane magnetic controlled sputtering target synoptic diagram;
Fig. 8 is a magnetic conductive pole piece adjusting pad distribution schematic diagram on the utility model embodiment 5 target cathode frameworks;
Fig. 9 is for using the utility model target etching state pattern sectional schematic diagram.
Description of reference numerals: 3 trajectories of electron motion, 4 plasma etching zones, 1 electric field E, 2 magnetic fields
5 targets, 6 target backboards, 7 insulating mats, 8 target cathode frameworks
9 cathode baffles (target mask shield), 10 magnet
11 magnetic conductive pole piece adjusting pads
Embodiment
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
As shown in Figure 3, target 5 and target backboard 6 that the utility model provides are stacked together, and target backboard 6 is stacked together with insulating mat 7; Target cathode framework 8 is used to carry target, target backboard and the insulating mat that is stacked together; Cathode baffle 9 is installed on the target cathode framework 8; One or more magnet 10 is placed side by side, is connected with target cathode framework 8 by transmission shaft, and can moves within the specific limits; Magnetic conductive pole piece adjusting pad 11 is fixed on the upper surface of removable magnet between target cathode framework 8 and magnet 10.
Embodiment 2
As shown in Figure 4, it is identical that present embodiment and embodiment 1 described plane magnetic controlled sputtering target integral body are provided with, and difference is that magnetic conductive pole piece adjusting pad 11 can also be fixed on target cathode framework 8 surfaces.
Embodiment 3
As shown in Figure 5, present embodiment and the foregoing description difference are that magnetic conductive pole piece adjusting pad 11 both can be fixed on the insulating mat 7, can be fixed on the target cathode framework 8 again between insulating mat 7 and target cathode framework 8.
Embodiment 4
Because what adopt in the above-described embodiment is that the magnetic conductive pole piece adjusting pad is placed in single position, it is also not obvious to found through experiments its Accommodation to the magnetic field of magnet 10 generations.In the present embodiment, as shown in Figure 6, be with the difference of the foregoing description, magnetic conductive pole piece adjusting pad 11 is between target cathode framework 8 and magnet 10, both be fixed on the upper surface of removable magnet, be fixed on again on target cathode framework 8 surfaces, described one or more magnetic conductive pole piece adjusting pads 11 can be staggered relatively or be staggeredly placed.Adopt this kind embodiment, the magnetic conductive pole piece adjusting pad is more obvious to the Accommodation of the magnetic field homogeneity that magnet 10 produces.
Present embodiment is on the basis of embodiment 4, between insulating mat 7 and target cathode framework 8, increased magnetic conductive pole piece adjusting pad 11 again, as shown in Figure 7, at this moment, the magnetic conductive pole piece adjusting pad that increases can produce meticulousr Accommodation to magnetic field, make the magnetic field in the target 5 place vacuum chambers more even, thereby improved the ununiformity that target consumes.The distribution of magnetic conductive pole piece adjusting pad 11 on the target cathode framework as shown in Figure 8.
By the described device of the foregoing description, under certain temperature, certain pressure, by on plane magnetic controlled sputtering target, placing magnetic conductive pole piece adjusting pad 11, change magnet 10 and produce the homogeneity in magnetic field, the sputter rate of control target 5 makes target 5 etchings even, improves its utilization ratio.
Through experiment, the target that obtains 5 consumes the etching figures as shown in Figure 9, and the consumption rate of sputtering target material is average as can be seen, and the target part over-drastic phenomenon that is etched has obtained inhibition, thereby has prolonged the work-ing life of sputtering target material.
It should be noted last that, above embodiment is only unrestricted in order to the explanation the technical solution of the utility model, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement the technical solution of the utility model, and not break away from the spirit and scope of technical solutions of the utility model.
Claims (9)
1. one kind can prolong the target plane magnetic controlled sputtering target in work-ing life, comprises folded successively insulating mat, target cathode framework, one or more magnet that are arranged side by side of establishing; It is characterized in that: also comprise one or more magnetic conductive pole piece adjusting pad, described magnetic conductive pole piece adjusting pad is arranged between described insulating mat and the described magnet.
2. the target plane magnetic controlled sputtering target in work-ing life that prolongs according to claim 1, it is characterized in that: described magnetic conductive pole piece adjusting pad is arranged between described target cathode framework and the magnet.
3. the target plane magnetic controlled sputtering target in work-ing life that prolongs according to claim 1 and 2, it is characterized in that: described magnetic conductive pole piece adjusting pad is fixed on described magnet upper surface.
4. the target plane magnetic controlled sputtering target in work-ing life that prolongs according to claim 1 and 2 is characterized in that: described magnetic conductive pole piece adjusting pad is fixed on the described target cathode framework one side relative with described magnet.
5. the target plane magnetic controlled sputtering target in work-ing life that prolongs according to claim 4 is characterized in that: described magnet upper surface is further fixing magnetic conductive pole piece adjusting pad also.
6. the target plane magnetic controlled sputtering target in work-ing life that prolongs according to claim 1 is characterized in that: described magnetic conductive pole piece adjusting pad is arranged between described insulating mat and the described target cathode framework.
7. according to claim 1 or the 6 described target plane magnetic controlled sputtering targets in work-ing life that prolong, it is characterized in that: described magnetic conductive pole piece adjusting pad is fixed on the target cathode framework one side relative with described insulating mat.
8. according to claim 1 or the 6 described target plane magnetic controlled sputtering targets in work-ing life that prolong, it is characterized in that: described magnetic conductive pole piece adjusting pad is fixed on the described insulating mat one side relative with the target cathode framework.
9. the target plane magnetic controlled sputtering target in work-ing life that prolongs according to claim 8 is characterized in that: the described target cathode framework one side relative with insulating mat be further fixing magnetic conductive pole piece adjusting pad also.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201491434U CN201068469Y (en) | 2007-05-15 | 2007-05-15 | Flat surface magnetron sputtering target capable of prolonging target material service lifetime |
| US12/098,167 US20080283394A1 (en) | 2007-05-15 | 2008-04-04 | Magnetron sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201491434U CN201068469Y (en) | 2007-05-15 | 2007-05-15 | Flat surface magnetron sputtering target capable of prolonging target material service lifetime |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201068469Y true CN201068469Y (en) | 2008-06-04 |
Family
ID=39489846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007201491434U Expired - Lifetime CN201068469Y (en) | 2007-05-15 | 2007-05-15 | Flat surface magnetron sputtering target capable of prolonging target material service lifetime |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20080283394A1 (en) |
| CN (1) | CN201068469Y (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101805889B (en) * | 2009-02-13 | 2012-01-11 | 北京京东方光电科技有限公司 | Magnetic target and magnetron sputtering device having same |
| CN102352486A (en) * | 2011-11-16 | 2012-02-15 | 东莞市润华光电有限公司 | Magnetron sputtering target with adjustable magnetic shoe |
| CN101928928B (en) * | 2009-06-25 | 2013-07-31 | 鸿富锦精密工业（深圳）有限公司 | Magnetron sputtering target holder and magnetron sputtering device comprising same |
| CN103290377A (en) * | 2012-06-13 | 2013-09-11 | 成都天马微电子有限公司 | Magnetron sputtering method, magnetron sputtering electrode and device thereof |
| RU2500834C2 (en) * | 2011-08-29 | 2013-12-10 | Закрытое акционерное общество "Ферри Ватт" | Sputtering assembly of planar magnetron |
| CN105256281A (en) * | 2015-11-24 | 2016-01-20 | 深圳市华星光电技术有限公司 | Magnetron sputtering coating device and target device thereof |
| CN105463390A (en) * | 2014-09-12 | 2016-04-06 | 安泰科技股份有限公司 | Rotary target material and manufacturing method thereof |
| CN105568240A (en) * | 2016-02-16 | 2016-05-11 | 武汉华星光电技术有限公司 | Magnetron sputtering device and magnetron sputtering method |
| CN106854752A (en) * | 2015-12-08 | 2017-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering apparatus |
| CN107002229A (en) * | 2014-12-03 | 2017-08-01 | 株式会社爱发科 | Target assembly |
| CN108396299A (en) * | 2018-06-06 | 2018-08-14 | 北京铂阳顶荣光伏科技有限公司 | A kind of magnetron sputtering planar cathode |
| CN108578913A (en) * | 2018-04-20 | 2018-09-28 | 上海联影医疗科技有限公司 | A kind of X-ray target assembly and radiotherapy apparatus |
| CN111020510A (en) * | 2019-12-25 | 2020-04-17 | 上海子创镀膜技术有限公司 | Novel adjustable planar cathode of magnet steel |
| CN111424246A (en) * | 2020-05-11 | 2020-07-17 | Tcl华星光电技术有限公司 | Magnet sputtering apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103132038A (en) * | 2013-02-27 | 2013-06-05 | 蚌埠玻璃工业设计研究院 | Cathode backside glow discharge elimination device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69937948D1 (en) * | 1999-06-21 | 2008-02-21 | Bekaert Advanced Coatings N V | Magnetron with movable magnet arrangement to compensate the erosion profile |
| US6372098B1 (en) * | 2000-09-28 | 2002-04-16 | The Boc Group, Inc. | High target utilization magnet array and associated methods |
| JP2003141719A (en) * | 2001-10-30 | 2003-05-16 | Anelva Corp | Sputtering apparatus and thin film forming method |
-
2007
- 2007-05-15 CN CNU2007201491434U patent/CN201068469Y/en not_active Expired - Lifetime
-
2008
- 2008-04-04 US US12/098,167 patent/US20080283394A1/en not_active Abandoned
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101805889B (en) * | 2009-02-13 | 2012-01-11 | 北京京东方光电科技有限公司 | Magnetic target and magnetron sputtering device having same |
| US8388819B2 (en) | 2009-02-13 | 2013-03-05 | Beijing Boe Optoelectronics Technology Co., Ltd. | Magnet target and magnetron sputtering apparatus having the same |
| CN101928928B (en) * | 2009-06-25 | 2013-07-31 | 鸿富锦精密工业（深圳）有限公司 | Magnetron sputtering target holder and magnetron sputtering device comprising same |
| RU2500834C2 (en) * | 2011-08-29 | 2013-12-10 | Закрытое акционерное общество "Ферри Ватт" | Sputtering assembly of planar magnetron |
| CN102352486A (en) * | 2011-11-16 | 2012-02-15 | 东莞市润华光电有限公司 | Magnetron sputtering target with adjustable magnetic shoe |
| CN103290377A (en) * | 2012-06-13 | 2013-09-11 | 成都天马微电子有限公司 | Magnetron sputtering method, magnetron sputtering electrode and device thereof |
| CN103290377B (en) * | 2012-06-13 | 2015-05-06 | 成都天马微电子有限公司 | Magnetron sputtering method, magnetron sputtering electrode and device thereof |
| CN105463390B (en) * | 2014-09-12 | 2018-12-04 | 安泰科技股份有限公司 | Rotary target material and its manufacturing method |
| CN105463390A (en) * | 2014-09-12 | 2016-04-06 | 安泰科技股份有限公司 | Rotary target material and manufacturing method thereof |
| CN107002229A (en) * | 2014-12-03 | 2017-08-01 | 株式会社爱发科 | Target assembly |
| CN107002229B (en) * | 2014-12-03 | 2019-05-07 | 株式会社爱发科 | Target assembly |
| CN105256281A (en) * | 2015-11-24 | 2016-01-20 | 深圳市华星光电技术有限公司 | Magnetron sputtering coating device and target device thereof |
| CN106854752A (en) * | 2015-12-08 | 2017-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering apparatus |
| CN106854752B (en) * | 2015-12-08 | 2019-07-05 | 北京北方华创微电子装备有限公司 | Magnetron sputtering apparatus |
| CN105568240A (en) * | 2016-02-16 | 2016-05-11 | 武汉华星光电技术有限公司 | Magnetron sputtering device and magnetron sputtering method |
| CN105568240B (en) * | 2016-02-16 | 2018-11-23 | 武汉华星光电技术有限公司 | Magnetic control sputtering device and magnetically controlled sputter method |
| CN108578913A (en) * | 2018-04-20 | 2018-09-28 | 上海联影医疗科技有限公司 | A kind of X-ray target assembly and radiotherapy apparatus |
| CN108396299A (en) * | 2018-06-06 | 2018-08-14 | 北京铂阳顶荣光伏科技有限公司 | A kind of magnetron sputtering planar cathode |
| CN111020510A (en) * | 2019-12-25 | 2020-04-17 | 上海子创镀膜技术有限公司 | Novel adjustable planar cathode of magnet steel |
| CN111424246A (en) * | 2020-05-11 | 2020-07-17 | Tcl华星光电技术有限公司 | Magnet sputtering apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| US20080283394A1 (en) | 2008-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201068469Y (en) | Flat surface magnetron sputtering target capable of prolonging target material service lifetime | |
| CN104766779B (en) | Method and applicator for coating a substrate | |
| EP2855729B1 (en) | Method for coating a substrate and coater | |
| EP2855727A1 (en) | Method for sputtering for processes with a pre-stabilized plasma | |
| US11624110B2 (en) | Method of coating a substrate and coating apparatus for coating a substrate | |
| KR102192566B1 (en) | Sputter deposition source, sputter deposition apparatus, and method of depositing a layer on a substrate | |
| CN110106481B (en) | Coating device and physical vapor deposition equipment | |
| CN112575301B (en) | Method for coating a substrate and coater | |
| CN102953038A (en) | Sputtering target with reverse erosion profile surface and sputtering system and method using the same | |
| KR100848851B1 (en) | Plasma damage free sputter gun, sputter, plasma process apparatus and film-forming method | |
| CN108754444A (en) | A kind of PVD coating apparatus | |
| CN109841468B (en) | Magnetron assembly, magnetron sputtering chamber and semiconductor processing equipment | |
| JPH11350123A (en) | Thin film manufacturing apparatus and liquid crystal display substrate manufacturing method | |
| CN220224312U (en) | Magnetron sputtering coating device | |
| KR20230084282A (en) | Sputter deposition source, deposition apparatus, and method for coating a substrate | |
| JP2022544641A (en) | Methods of depositing materials on substrates | |
| KR20240168428A (en) | Deposition source, deposition source array, and deposition device | |
| CN114582690A (en) | Semiconductor process equipment and magnetron mechanism thereof | |
| WO2017088212A1 (en) | Magnetron sputter coating apparatus and target device therefor | |
| TWI244677B (en) | A sputtering system for semiconductor manufacture | |
| CN111910162A (en) | Magnetron sputtering device and method | |
| WO2009075393A1 (en) | Plasma damage free sputter gun, sputter, plasma process apparatus and film-forming method | |
| KR20100132144A (en) | Negative Module for Improving Target Efficiency of Opposing Targeted Sputter Equipment | |
| KR20090043861A (en) | Magnetron sputtering device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20150617 Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150617 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150617 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20080604 |
|
| CX01 | Expiry of patent term |