CN200990029Y - Electric current source circuit - Google Patents
Electric current source circuit Download PDFInfo
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- CN200990029Y CN200990029Y CN 200620149959 CN200620149959U CN200990029Y CN 200990029 Y CN200990029 Y CN 200990029Y CN 200620149959 CN200620149959 CN 200620149959 CN 200620149959 U CN200620149959 U CN 200620149959U CN 200990029 Y CN200990029 Y CN 200990029Y
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- 239000004065 semiconductor Substances 0.000 claims description 168
- 230000003068 static effect Effects 0.000 claims description 6
- 239000008186 active pharmaceutical agent Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000003412 degenerative effect Effects 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Abstract
The utility model discloses a current source circuit, comprising a current source main circuit which is composed of four MOS tubes, a starting circuit which is composed of two MOS tubes, and a voltage coefficient control device which is connected with the current source main circuit to reduce the voltage coefficient of the current source circuit and keep the quiescent working current of the current source circuit stable. By adopting the technic proposal of the utility model, the working current I <ref> changing with the Vdd is restrained obviously, therefore the current source circuit has lower power voltage coefficient in the application of low power consumption, and the circuit has stable quiescent working current.
Description
Technical field
The utility model relates to current source circuit, more particularly, relates to a kind of current source circuit with low supply voltage coefficient.
Background technology
Current source circuit is the element that constitutes mimic channel, and it provides bias current for other module of circuit, so we wish that the source electric current that current source circuit produces does not change with supply voltage.The IC of the little electric current of low-power consumption particularly of new generation is very responsive for the variation of biasing Bias electric current, will directly influence the quiescent current of entire circuit.
The current source circuit that tradition is used as shown in Figure 1, Fig. 1 is the circuit diagram of the current source circuit that uses in the prior art.This current source circuit 100 comprises: the current source main body circuit that is made of 4 metal-oxide-semiconductors, and the start-up circuit that is made of 2 metal-oxide-semiconductors.As shown in Figure 1, this current source main body circuit comprises: the first metal-oxide-semiconductor M1, and source electrode is connected to Vdd, and drain electrode links to each other with grid; The second metal-oxide-semiconductor M2, source electrode is connected to Vdd, and grid links to each other with the grid of the first metal-oxide-semiconductor M1; The 3rd metal-oxide-semiconductor M3, drain electrode is connected to the drain electrode of the first metal-oxide-semiconductor M1, and source electrode is by second resistance R, 2 ground connection; The 4th metal-oxide-semiconductor M4, drain electrode is connected to the drain electrode of the second metal-oxide-semiconductor M2, and grid links to each other with drain electrode, and the grid of the 4th metal-oxide-semiconductor M4 also connects the grid of the 3rd metal-oxide-semiconductor M3, the source ground of the 4th metal-oxide-semiconductor M4.This start-up circuit comprises: the 5th metal-oxide-semiconductor M5, and source electrode is connected to Vdd, and grid is connected to the grid of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2, and drain electrode is by first resistance R, 1 ground connection; The 6th metal-oxide-semiconductor M6, source electrode is connected to Vdd, and grid is connected to the drain electrode of the 5th metal-oxide-semiconductor M5, and drain electrode is connected to the grid of the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4.In example shown in Figure 1, the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 are the enhancement mode metal-oxide-semiconductors; The 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4 also are the enhancement mode metal-oxide-semiconductors.The 5th metal-oxide-semiconductor M5 and the 6th metal-oxide-semiconductor M6 are the enhancement mode metal-oxide-semiconductors.
In the embodiment in figure 1, the static working current I of current source
RefFor:
V wherein
GS4Be the voltage between the 4th metal-oxide-semiconductor M4 grid and the source electrode, wherein V
GS3Be the voltage between the 3rd metal-oxide-semiconductor M3 grid and the source electrode.According to example shown in Figure 1, when supply voltage increased gradually, this circuit had just exposed following shortcoming: I
RefCan increase along with the increase of Vdd, this is because the drain potential of the 3rd metal-oxide-semiconductor M3 is followed Vdd to be increased, and causes the VDS of the 3rd metal-oxide-semiconductor M3 pipe to increase I
RefWill increase.
Fig. 2 a, b, c show the V of the 3rd metal-oxide-semiconductor M3 respectively
DS, drain voltage V
DrainAnd I
RefThe curve map that changes with Vdd.As seen, when Vdd increases, the V of the 3rd metal-oxide-semiconductor M3
DS, drain voltage V
DrainAnd I
RefThe capital increases significantly, thereby influences the performance of current source.
The utility model content
The purpose of this utility model provides a kind of improved current source circuit, and the voltage coefficient that it can reduce current source significantly makes quiescent operation voltage keep stable.
According to the utility model, a kind of current source circuit is provided, comprise: the current source main body circuit that constitutes by 4 metal-oxide-semiconductors, and the start-up circuit that constitutes by 2 metal-oxide-semiconductors, also comprise the voltage coefficient control device, be connected in described current source main body circuit, reduce the voltage coefficient of current source circuit, holding current source circuit static working current stable.
According to an embodiment of the present utility model, described current source main body circuit comprises: first metal-oxide-semiconductor, and source electrode is connected to Vdd, and drain electrode links to each other with grid; Second metal-oxide-semiconductor, source electrode is connected to Vdd, and grid links to each other with the grid of first metal-oxide-semiconductor; The 3rd metal-oxide-semiconductor, drain electrode is connected to the drain electrode of first metal-oxide-semiconductor, and source electrode is by second resistance eutral grounding; The 4th metal-oxide-semiconductor, drain electrode is connected to the drain electrode of second metal-oxide-semiconductor, and grid links to each other with drain electrode, and the grid of the 4th metal-oxide-semiconductor also connects the grid of the 3rd metal-oxide-semiconductor, the source ground of the 4th metal-oxide-semiconductor.Preferable, described first metal-oxide-semiconductor and second metal-oxide-semiconductor are the enhancement mode metal-oxide-semiconductors; The 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor also are the enhancement mode metal-oxide-semiconductors.
According to an embodiment of the present utility model, described start-up circuit comprises: the 5th metal-oxide-semiconductor, and source electrode is connected to Vdd, and grid is connected to the grid of described first metal-oxide-semiconductor and second metal-oxide-semiconductor, and drain electrode is by first resistance eutral grounding; The 6th metal-oxide-semiconductor, source electrode is connected to Vdd, and grid is connected to the drain electrode of described the 5th metal-oxide-semiconductor, and drain electrode is connected to the grid of described the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor.Preferable, described the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor are the enhancement mode metal-oxide-semiconductors.
According to an embodiment of the present utility model, described voltage coefficient control device is the 7th metal-oxide-semiconductor, is connected between first metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor.Such as, the drain electrode of the 7th metal-oxide-semiconductor is connected to the drain electrode of first metal-oxide-semiconductor, and the source electrode of the 7th metal-oxide-semiconductor is connected to the source electrode of the 3rd metal-oxide-semiconductor, and the grid of the 7th metal-oxide-semiconductor is connected to the grid of the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor.Preferable, described the 7th metal-oxide-semiconductor is a depletion type MOS tube.
According to an embodiment of the present utility model, also comprise the 8th metal-oxide-semiconductor, drain electrode is connected to the drain electrode of the 5th metal-oxide-semiconductor, source ground, described first resistance is realized by the drain electrode and the resistance between the ground of the 8th metal-oxide-semiconductor.Preferable, described the 8th metal-oxide-semiconductor is a depletion type MOS tube.
Adopt the technical solution of the utility model, can obvious suppression working current I
RefWith the variation of Vdd, thereby make this current source circuit in low-power consumption is used, lower supply voltage coefficient be arranged, make circuit that stable static working current can be arranged.
Description of drawings
The above and other feature of the present utility model, character and advantage will become clearer by the description below in conjunction with drawings and Examples, in the accompanying drawings, identical Reference numeral is represented identical feature all the time, wherein:
Fig. 1 is the circuit diagram of the current source circuit that uses in the prior art;
Fig. 2 a is the V of the 3rd metal-oxide-semiconductor M3 among Fig. 1
DSThe curve map that changes with Vdd;
Fig. 2 b is the drain voltage V of the 3rd metal-oxide-semiconductor M3 among Fig. 1
DrainThe curve map that changes with Vdd;
Fig. 2 c is I
RefThe curve map that changes with Vdd;
Fig. 3 is the circuit diagram according to the current source circuit of an embodiment of the present utility model;
Fig. 4 a is the I that adopts the current source circuit of prior art
RefThe curve map that changes with Vdd;
Fig. 4 b is the I that adopts current source circuit of the present utility model
RefThe curve map that changes with Vdd.
Embodiment
The utility model aims to provide a kind of current source circuit with low supply voltage coefficient.With reference to figure 3, Fig. 3 is the circuit diagram according to the current source circuit of an embodiment of the present utility model, and this current source circuit comprises:
The current source main body circuit that constitutes by 4 metal-oxide-semiconductors, and
The start-up circuit that constitutes by 2 metal-oxide-semiconductors,
The characteristics of current source circuit of the present utility model are also to comprise the voltage coefficient control device, are connected in described current source main body circuit, reduce the voltage coefficient of current source circuit, holding current source circuit static working current stable.
Wherein, current source main body circuit comprises: the first metal-oxide-semiconductor M1, and source electrode is connected to Vdd, and drain electrode links to each other with grid; The second metal-oxide-semiconductor M2, source electrode is connected to Vdd, and grid links to each other with the grid of the first metal-oxide-semiconductor M1; The 3rd metal-oxide-semiconductor M3, drain electrode is connected to the drain electrode of the first metal-oxide-semiconductor M1, and source electrode is by second resistance R, 2 ground connection; The 4th metal-oxide-semiconductor M4, drain electrode is connected to the drain electrode of the second metal-oxide-semiconductor M2, and grid links to each other with drain electrode, and the grid of the 4th metal-oxide-semiconductor M4 also connects the grid of the 3rd metal-oxide-semiconductor M3, the source ground of the 4th metal-oxide-semiconductor M4.
This start-up circuit comprises: the 5th metal-oxide-semiconductor M5, and source electrode is connected to Vdd, and grid is connected to the grid of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2, and drain electrode is by first resistance R, 1 ground connection; The 6th metal-oxide-semiconductor M6, source electrode is connected to Vdd, and grid is connected to the drain electrode of the 5th metal-oxide-semiconductor M5, and drain electrode is connected to the grid of the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4.
This voltage coefficient control device is the 7th metal-oxide-semiconductor M7, is connected between the first metal-oxide-semiconductor M1 and the 3rd metal-oxide-semiconductor M3.According to embodiment shown in Figure 3, the drain electrode of the 7th metal-oxide-semiconductor M7 is connected to the drain electrode of the first metal-oxide-semiconductor M1, and the source electrode of the 7th metal-oxide-semiconductor M7 is connected to the source electrode of the 3rd metal-oxide-semiconductor M3, and the grid of the 7th metal-oxide-semiconductor M7 is connected to the grid of the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4.
In the embodiment shown in fig. 3, the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 are the enhancement mode metal-oxide-semiconductors in the current source main body circuit; The 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4 also are the enhancement mode metal-oxide-semiconductors.The 5th metal-oxide-semiconductor M5 and the 6th metal-oxide-semiconductor M6 in the start-up circuit are the enhancement mode metal-oxide-semiconductors.The 7th metal-oxide-semiconductor M7 is a depletion type MOS tube.
Continuation is with reference to figure 3, and in the start-up circuit part, this embodiment has also made following change: comprise the 8th metal-oxide-semiconductor M8, drain electrode is connected to the drain electrode of the 5th metal-oxide-semiconductor M5, source ground, and first resistance R 1 is realized by drain electrode and the resistance between the ground of the 8th metal-oxide-semiconductor M8.The 8th metal-oxide-semiconductor M8 is a depletion type MOS tube.
By the depletion type MOS tube M7 that increases between the first metal-oxide-semiconductor M1 and the 3rd metal-oxide-semiconductor M3, its grid meets Nbias, and the effect of this depletion type MOS tube M7 is the V that reduces the 3rd metal-oxide-semiconductor M3 among Fig. 1
DSVariation.
With reference to figure 4a and Fig. 4 b, Fig. 4 a is the I that adopts the current source circuit of prior art
RefWith the curve map that Vdd changes, Fig. 4 b is the I that adopts current source circuit of the present utility model
RefThe curve map that changes with Vdd.By Fig. 4 a and Fig. 4 b as seen, the adding of this depletion type MOS tube M7 is for I
RefThe supply voltage coefficient played degenerative effect, for I
RefHave with the variation of supply voltage Vdd and significantly to calm down effect.
Adopt the technical solution of the utility model, can obvious suppression working current I
RefWith the variation of Vdd, thereby make this current source circuit in low-power consumption is used, lower supply voltage coefficient be arranged, make circuit that stable static working current can be arranged.
The foregoing description provides to being familiar with the person in the art and realizes or use of the present utility model; those skilled in the art can be under the situation that does not break away from invention thought of the present utility model; the foregoing description is made various modifications or variation; thereby protection domain of the present utility model do not limit by the foregoing description, and should be the maximum magnitude that meets the inventive features that claims mention.
Claims (10)
1. current source circuit comprises:
The current source main body circuit that constitutes by 4 metal-oxide-semiconductors, and
The start-up circuit that constitutes by 2 metal-oxide-semiconductors,
It is characterized in that,
Also comprise the voltage coefficient control device, be connected in described current source main body circuit, reduce the voltage coefficient of current source circuit, holding current source circuit static working current stable.
2. described current source circuit as claimed in claim 1 is characterized in that, described current source main body circuit comprises:
First metal-oxide-semiconductor (M1), source electrode is connected to Vdd, and drain electrode links to each other with grid;
Second metal-oxide-semiconductor (M2), source electrode is connected to Vdd, and grid links to each other with the grid of first metal-oxide-semiconductor (M1);
The 3rd metal-oxide-semiconductor (M3), drain electrode is connected to the drain electrode of first metal-oxide-semiconductor (M1), and source electrode is by second resistance (R2) ground connection;
The 4th metal-oxide-semiconductor (M4), drain electrode is connected to the drain electrode of second metal-oxide-semiconductor (M2), and grid links to each other with drain electrode, and the grid of the 4th metal-oxide-semiconductor (M4) also connects the grid of the 3rd metal-oxide-semiconductor (M3), the source ground of the 4th metal-oxide-semiconductor (M4).
3. described current source circuit as claimed in claim 2 is characterized in that, described first metal-oxide-semiconductor (M1) and second metal-oxide-semiconductor (M2) are the enhancement mode metal-oxide-semiconductors; The 3rd metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4) also are the enhancement mode metal-oxide-semiconductors.
4. current source circuit as claimed in claim 3 is characterized in that, described start-up circuit comprises:
The 5th metal-oxide-semiconductor (M5), source electrode is connected to Vdd, and grid is connected to the grid of described first metal-oxide-semiconductor (M1) and second metal-oxide-semiconductor (M2), and drain electrode is by first resistance (R1) ground connection;
The 6th metal-oxide-semiconductor (M6), source electrode is connected to Vdd, and grid is connected to the drain electrode of described the 5th metal-oxide-semiconductor (M5), and drain electrode is connected to the grid of described the 3rd metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4).
5. current source circuit as claimed in claim 4 is characterized in that, described the 5th metal-oxide-semiconductor (M5) and the 6th metal-oxide-semiconductor (M6) are the enhancement mode metal-oxide-semiconductors.
6. current source circuit as claimed in claim 5 is characterized in that, described voltage coefficient control device is the 7th metal-oxide-semiconductor (M7), is connected between first metal-oxide-semiconductor (M1) and the 3rd metal-oxide-semiconductor (M3).
7. current source circuit as claimed in claim 6, it is characterized in that, the drain electrode of the 7th metal-oxide-semiconductor (M7) is connected to the drain electrode of first metal-oxide-semiconductor (M1), the source electrode of the 7th metal-oxide-semiconductor (M7) is connected to the source electrode of the 3rd metal-oxide-semiconductor (M3), and the grid of the 7th metal-oxide-semiconductor (M7) is connected to the grid of the 3rd metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4).
8. current source circuit as claimed in claim 7 is characterized in that, described the 7th metal-oxide-semiconductor (M7) is a depletion type MOS tube.
9. current source circuit as claimed in claim 8, it is characterized in that, also comprise the 8th metal-oxide-semiconductor (M8), drain electrode is connected to the drain electrode of the 5th metal-oxide-semiconductor (M5), source ground, described first resistance (R1) is realized by the drain electrode and the resistance between the ground of the 8th metal-oxide-semiconductor (M8).
10. current source circuit as claimed in claim 9 is characterized in that, described the 8th metal-oxide-semiconductor (M8) is a depletion type MOS tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620149959 CN200990029Y (en) | 2006-11-29 | 2006-11-29 | Electric current source circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620149959 CN200990029Y (en) | 2006-11-29 | 2006-11-29 | Electric current source circuit |
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| Publication Number | Publication Date |
|---|---|
| CN200990029Y true CN200990029Y (en) | 2007-12-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620149959 Expired - Lifetime CN200990029Y (en) | 2006-11-29 | 2006-11-29 | Electric current source circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103019287A (en) * | 2011-09-27 | 2013-04-03 | 联发科技（新加坡）私人有限公司 | Control circuit and circuit control method |
| CN103186154A (en) * | 2011-12-29 | 2013-07-03 | 无锡华润华晶微电子有限公司 | Constant current source circuit structure |
| CN107272812A (en) * | 2017-07-13 | 2017-10-20 | 上海南麟电子股份有限公司 | One kind exhausts pipe reference current source circuit |
| CN107291136A (en) * | 2016-04-11 | 2017-10-24 | 成都锐成芯微科技股份有限公司 | Low-power dissipation power supply power supply circuit |
-
2006
- 2006-11-29 CN CN 200620149959 patent/CN200990029Y/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103019287A (en) * | 2011-09-27 | 2013-04-03 | 联发科技（新加坡）私人有限公司 | Control circuit and circuit control method |
| CN103019287B (en) * | 2011-09-27 | 2015-12-16 | 联发科技（新加坡）私人有限公司 | Control circuit and circuit control method |
| CN103186154A (en) * | 2011-12-29 | 2013-07-03 | 无锡华润华晶微电子有限公司 | Constant current source circuit structure |
| WO2013097579A1 (en) * | 2011-12-29 | 2013-07-04 | 无锡华润华晶微电子有限公司 | Constant current source circuit structure |
| CN107291136A (en) * | 2016-04-11 | 2017-10-24 | 成都锐成芯微科技股份有限公司 | Low-power dissipation power supply power supply circuit |
| CN107272812A (en) * | 2017-07-13 | 2017-10-20 | 上海南麟电子股份有限公司 | One kind exhausts pipe reference current source circuit |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: BCD Semiconductor Manufacturing Corporation Limited Assignor: BCD Semiconductor Manufacturing Ltd. Contract fulfillment period: 2008.5.27 to 2016.11.28 Contract record no.: 2008990000131 Denomination of utility model: Current source circuit of multiplex parallel LED driven by one reference current Granted publication date: 20071212 License type: Exclusive license Record date: 20080613 |
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| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENCE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.5.27 TO 2016.11.28 Name of requester: SHANGHAI XINJIN SEMICONDUCTOR MANUFACTURING CO., Effective date: 20080613 |
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| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: BCD Semiconductor Manufacturing Corporation Limited Assignor: BCD Semiconductor Manufacturing Ltd. Contract fulfillment period: 2007.12.22 to 2013.12.21 Contract record no.: 2008990000595 Denomination of utility model: Current source circuit of multiplex parallel LED driven by one reference current Granted publication date: 20071212 License type: Exclusive license Record date: 20081008 |
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| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2007.12.22 TO 2013.12.21; CHANGE OF CONTRACT Name of requester: SHANGHAI XINJIN SEMICONDUCTOR MANUFACTURING CO., L Effective date: 20081008 |
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| CX01 | Expiry of patent term |
Granted publication date: 20071212 |
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| EXPY | Termination of patent right or utility model |