CN209583627U - microfluidic actuator - Google Patents

Abstract

A microfluidic actuator, comprising: a substrate having a plurality of first outflow holes and a plurality of second outflow holes; a cavity layer having a flow storage chamber; a vibration layer; a first metal layer; a piezoelectric actuation layer; a second metal layer having an upper electrode pad and a lower electrode pad; an inlet layer; a resonance layer; and an array aperture plate; and providing a driving power supply with different phase charges to the upper electrode welding pad and the lower electrode welding pad to drive and control the vibration layer to generate vertical displacement so that the fluid is sucked from the inlet layer, converged to the fluid storage chamber, extruded through the first outflow holes and the second outflow holes and pushed away the array hole sheet to be discharged to complete fluid transmission.

Description

microfluidic actuator

technical field

This case relates to an actuator, especially a microfluidic actuator manufactured using micro-electromechanical surface and body processing.

Background technique

At present, in various fields, whether it is medicine, computer technology, printing, energy and other industries, products are developing towards refinement and miniaturization. Among them, the fluid contained in products such as micro pumps, sprayers, inkjet heads, and industrial printing devices The actuator is its key technology.

With the rapid development of science and technology, the application of fluid conveying structure is becoming more and more diversified, such as industrial application, biomedical application, medical care, electronic heat dissipation, etc., and even the recent popular wearable devices can be seen. It can be seen that traditional fluid actuators are gradually trending toward device miniaturization and flow maximization.

In the prior art, various micro-fluidic actuators produced by micro-electromechanical processes have been developed. However, improving the efficiency of fluid transmission through innovative structures is still an important content of development.

Utility model content

The main purpose of this case is to provide a valved microfluidic actuator, which is manufactured using microelectromechanical processes and can transmit fluids. The microfluidic actuator in this case is manufactured using micro-electromechanical surface and body processing, supplemented by packaging technology.

A broad implementation of this case is a microfluidic actuator, including: a substrate, a cavity layer, a vibration layer, a first metal layer, a piezoelectric actuation layer, an isolation layer, a second Metal layer, a waterproof layer, a photoresist layer, an entrance layer, a channel layer, a resonant layer and an array hole sheet. The substrate has a first surface and a second surface, and an outlet groove, a plurality of first outflow holes and a plurality of second outflow holes are formed through an etching process. The outlet groove communicates with a plurality of first outflow holes and a plurality of second outflow holes. The plurality of second outflow holes are arranged outside the plurality of first outflow holes. The cavity layer is formed on the first surface of the substrate through a deposition process, and a flow storage chamber is formed through an etching process. The flow storage chamber communicates with a plurality of first outflow holes and a plurality of second outflow holes. The vibration layer is formed on the chamber layer through a deposition process, and a plurality of fluid grooves and a vibration region are formed through an etching process. A plurality of fluid grooves are symmetrically formed on opposite sides of the vibrating layer to define a vibrating area. The first metal layer is formed on the vibration layer through a deposition process, and a lower electrode region, a plurality of barrier regions and a plurality of gaps are formed through an etching process. The lower electrode area is formed at a position corresponding to the vibration area. A plurality of gaps are formed between the lower electrode region and the plurality of barrier regions. A plurality of barrier regions are correspondingly formed on positions outside of the plurality of fluid grooves. The piezoelectric actuation layer is formed on the first metal layer through a deposition process, and an active region is formed at a position corresponding to the lower electrode region of the first metal layer through an etching process. The isolation layer is formed on the piezoelectric actuation layer and the first metal layer through a deposition process, and a plurality of spacers are formed in a plurality of gaps through an etching process. The second metal layer is formed on the piezoelectric actuation layer, the first metal layer and the isolation layer through a deposition process, and an upper electrode pad and a lower electrode pad are formed on the first metal layer through an etching process. The waterproof layer is formed on the first metal layer, the second metal layer and the isolation layer through the coating process, and the upper electrode pad and the lower electrode pad are exposed through the etching process. The photoresist layer is formed on the first metal layer, the second metal layer and the waterproof layer through a developing process. The inlet layer forms a plurality of fluid inlets through an etching process or a laser process. The flow channel layer is formed on the inlet layer, and an inflow chamber, a plurality of inflow channels and a plurality of flow channel inlets are formed through a photolithography process. The plurality of flow channel inlets are respectively communicated with the plurality of fluid inlets of the inlet layer. A plurality of inflow channels and a plurality of flow channel inlets are arranged around the inflow chamber. The multiple inflow channels are connected between the multiple flow channel inlets and the inflow chamber. The resonant layer is formed on the channel layer through a rolling process, a cavity through hole is formed through an etching process, and bonded on the photoresist layer through an inversion alignment process and a wafer bonding process. The array hole sheet is formed on the substrate through a bonding process. A punch array has a plurality of punch holes. The plurality of hole sheets and the plurality of first outflow holes and the plurality of second outflow holes are mutually dislocated so as to close the plurality of first outflow holes and the plurality of second outflow holes of the first substrate. Provide driving power with different phase charges to the upper electrode pad and the lower electrode pad to drive and control the vibration area of the vibration layer to move up and down, so that the fluid is sucked from multiple fluid inlets and flows into the inflow chamber through multiple inflow channels , and then flow to the resonance chamber through the through holes of the cavity, and finally flow to the storage chamber through a plurality of fluid grooves, and finally be squeezed through a plurality of first outflow holes and a plurality of second outflow holes and pushed After the hole array is opened, it is discharged from a plurality of holes of the hole sheet to complete the fluid transmission.

Description of drawings

FIG. 1A is a schematic front cross-sectional view of the first embodiment of the microfluidic actuator of the present invention.

FIG. 1B is a schematic side sectional view of the first embodiment of the present case.

2A to 2AH are exploded schematic views of the manufacturing steps of the first embodiment of the present invention.

FIG. 3 is a schematic top view of the first embodiment of the present invention.

FIG. 4 is a schematic top view of the entrance layer of the first embodiment of the present invention.

FIG. 5 is a schematic top view of the flow holes of the first embodiment of the present invention.

6A to 6E are schematic diagrams of the action of the first embodiment of the present application.

FIG. 7A is a schematic cross-sectional view of the second embodiment of the microfluidic actuator of the present invention.

Fig. 7B is a schematic bottom view of other embodiments of the present case.

FIG. 8 is a schematic bottom view of the array hole sheet according to the third embodiment of the present application.

FIG. 9A to FIG. 9C are schematic diagrams of the inversion alignment process and the wafer bonding process of the fourth embodiment of the present application.

Explanation of reference signs

100, 100', 100", 100'": microfluidic actuators

10: Actuation unit

1a, 1a'": first substrate

11a: first surface

12a: Second surface

13a: Outlet groove

14a: Auxiliary groove

15a, 15a'": the first outflow hole

16a, 16a'": the second outflow hole

1b: cavity layer

1c: Vibration layer

11c: Fluid groove

12c: Vibration zone

1d: first metal layer

11d: lower electrode area

12d: Barrier zone

13d: Clearance

1e: piezoelectric actuation layer

11e: Action area

1f: isolation layer

11f: spacer wall

1g: second metal layer

11g: Solder pad isolation area

12g: Upper electrode area

13g: Upper electrode pad

14g: Bottom electrode pad

1h: waterproof layer

1i: Second substrate

1j: film adhesive layer

1k: entry layer

1m: resonance layer

11m: cavity through hole

12m: movable part

13m: fixed part

1n: mask layer

11n: Mask opening

12n: mask hole

13n: first mask through hole

14n: second mask through hole

1o, 1o'": hole array

11o: holes in the hole

12o, 12o'": positioning hole

13o'": bracket part

AM1: First joint alignment mark

AM2: Second joining alignment mark

AW: Engage the alignment mark window

C1: Inflow chamber

C2: Resonance Chamber

C3: reservoir chamber

I: Fluid inlet

M1: the first photoresist layer

M1a: the first photoresist area

M2: second photoresist layer

M2a: second photoresist hole

M2b: second photoresist opening

M3: runner layer

M31: runner inlet

M32: cavity opening

M33: Inflow channel

M4: The third photoresist layer

M41: Third photoresist opening

P, P'": positioning column

Detailed ways

Some typical embodiments embodying the features and advantages of the present application will be described in detail in the description in the following paragraphs. It should be understood that the present case can have various changes in different aspects without departing from the scope of the present case, and the descriptions and diagrams therein are used for illustration in nature rather than limiting the present case.

The microfluidic actuator in this case is used to transport fluid, please refer to FIG. 1A and FIG. 1B. In the embodiment of this case, the microfluidic actuator 100 includes: a first substrate 1a, a cavity layer 1b, a vibrating layer 1c, A first metal layer 1d, a piezoelectric actuation layer 1e, an isolation layer 1f, a second metal layer 1g, a waterproof layer 1h, a second substrate 1i, a film adhesive layer 1j, an entrance layer 1k, a The resonant layer 1m, a mask layer 1n, a hole array sheet 1o, a first photoresist layer M1, a second photoresist layer M2, a channel layer M3 and a third photoresist layer M4. Array hole sheet 1o, first substrate 1a, cavity layer 1b, vibration layer 1c, first metal layer 1d, piezoelectric actuation layer 1e, isolation layer 1f, second metal layer 1g, waterproof layer 1h, second photoresist The layer M2, the resonant layer 1m, the channel layer M3 and the inlet layer 1k are sequentially stacked and combined to form a whole. The manufacturing process is described as follows. In the first embodiment of the present application, the microfluidic actuator 100 includes an actuating unit 10 .

Please refer to FIG. 2A, in the first embodiment of the present case, the first substrate 1a is a silicon substrate. The first substrate 1a has a first surface 11a and a second surface 12a opposite to the first surface 11a. In the first embodiment of the present case, the cavity layer 1b is formed on the first surface 11a of the first substrate 1a through a silicon dioxide material deposition process. The deposition process can be a physical vapor deposition process (PVD), a chemical vapor phase Deposition process (CVD) or a combination of both, but not limited thereto. In the first embodiment of the present application, the vibration layer 1c is formed on the cavity layer 1b through a silicon nitride material deposition process.

Please refer to FIG. 2B and FIG. 3 , in the first embodiment of the present application, the vibration layer 1c forms a plurality of fluid grooves 11c and a vibration region 12c through an etching process. The fluid grooves 11c are symmetrically formed on opposite sides of the vibrating layer 1c, thereby defining a vibrating region 12c. It should be noted that, in the first embodiment of the present application, the etching process can be a wet etching process, a dry etching process or a combination of both, but not limited thereto. It should be noted that in the first embodiment of the present application, the vibrating layer 1c has two fluid grooves 11c respectively formed on opposite sides of the vibrating layer 1c in the longitudinal direction, but not limited thereto.

Please refer to FIG. 2C and FIG. 2D , in the first embodiment of the present application, the first metal layer 1d is formed on the vibrating layer 1c through a first metal material deposition process. In this embodiment, the first metal material is a titanium nitride metal material or a tantalum metal material, but not limited thereto. The first metal layer 1d forms a lower electrode region 11d, a plurality of barrier regions 12d, a plurality of gaps 13d and a plurality of first alignment marks AM1 through an etching process. The lower electrode region 11d is formed at a position corresponding to the vibration region 12c of the vibration layer 1c. A gap 13d is formed between the lower electrode region 11d and the barrier region 12d. The barrier region 12d corresponds to an outer position of the fluid groove 11c formed in the vibration layer 1c. The first alignment mark AM1 is formed on the barrier region 12d.

Please refer to FIG. 2E and FIG. 2F. In the first embodiment of the present case, the piezoelectric actuation layer 1e is formed on the first metal layer 1d through a piezoelectric material deposition process, and is formed on the corresponding first metal layer 1d through an etching process. The position of the lower electrode region 11d of the layer 1d forms an active region 11e.

Please refer to FIG. 2G and FIG. 2H. In the first embodiment of the present case, the isolation layer 1f is formed on the first metal layer 1d and the piezoelectric actuation layer 1e through a silicon dioxide material deposition process, and is formed on the first metal layer 1d and the piezoelectric actuation layer 1e through an etching process. A plurality of spacers 11f are formed in the gap 13d of the first metal layer 1d.

Please refer to FIG. 2I and FIG. 2J. In the first embodiment of the present case, the first photoresist layer M1 is formed on the first metal layer 1d, the piezoelectric actuation layer 1e and the isolation layer 1f through a photoresist coating process, And a first photoresist region M1a is formed through a developing process. It should be noted that the photoresist coating process can be a spin coating process or a lamination roll (Laminate Rolling) process, but not limited thereto, and can be changed according to the process requirements. In the first embodiment of the present application, the first photoresist layer M1 is a negative photoresist, but not limited thereto.

Please refer to FIG. 2K, FIG. 2L and FIG. 3. In the first embodiment of the present case, the second metal layer 1g is formed on the first metal layer 1d, the piezoelectric actuation layer 1e, the isolation layer 1d through a second metal material deposition process. Layer 1f and the first photoresist region M1a of the first photoresist layer M1. In the first embodiment of the present application, the second metal material is a gold metal material or an aluminum metal material, but it is not limited thereto. The second metal layer 1g removes the first photoresist layer M1 through a lift-off process to form a pad isolation region 11g, an upper electrode region 12g, an upper electrode pad 13g and a lower electrode Solder pads 14g. The upper electrode region 12g is formed on the active region 11e of the piezoelectric actuation layer 1e. The upper electrode pad 13g and the lower electrode pad 14g are formed on the first metal layer 1d and located on opposite sides of the active region 11e of the piezoelectric actuation layer 1e. The upper electrode region 12g is separated from the lower electrode pad 14g by the pad isolation region 11g.

Please refer to FIG. 2M. In the first embodiment of the present case, the waterproof layer 1h is formed on the first metal layer 1d, the second metal layer 1g and the isolation layer 1f through a coating process, and the second metal layer is exposed through an etching process. 1g of upper electrode pads 13g and lower electrode pads 14g. It should be noted that, in the first embodiment of the present application, the waterproof layer 1h is made of parylene (Parylene), but it is not limited thereto. Parylene can be coated at room temperature, and has the advantages of strong coating, high chemical resistance and good biocompatibility. It is worth noting that the provision of the waterproof layer 1h can prevent the first metal layer 1d, the piezoelectric actuation layer 1e and the second metal layer 1g from being corroded by the fluid and causing a short circuit.

Please refer to FIG. 2N and FIG. 2O. In the first embodiment of this case, the second photoresist layer M2 is formed on the first metal layer 1d, the second metal layer 1g and the waterproof layer 1h through a photoresist coating process, and is transparent A plurality of second photoresist holes M2a and a second photoresist opening M2b are formed through the developing process.

Please refer to FIG. 2P , FIG. 2Q and FIG. 4 , in the first embodiment of the present case, the second substrate 1 i is a glass substrate. The film adhesive layer 1j is formed on the second substrate 1i through a rolling process. The entrance layer 1k is formed on the film adhesive layer 1j through a rolling process. In the first embodiment of the present application, the inlet layer 1k is made of a polyimide (PI) material, but it is not limited thereto. The thin film adhesive layer 1j and the inlet layer 1k form a plurality of fluid inlets I and a plurality of alignment mark windows AW through an etching process. The alignment mark window AW is formed outside the fluid inlet I. It should be noted that the etching process for forming the fluid inlet I and bonding the alignment mark window AW is a dry etching process or a laser etching process, but not limited thereto. In the first embodiment of the present case, the microfluidic actuator 100 has four fluid inlets I, which are respectively located at the four corners of the microfluidic actuator 100. In other embodiments, the number and distribution of the fluidic inlets I may depend on Varies according to design requirements.

Please refer to FIG. 2R, FIG. 2S and FIG. 4. In the first embodiment of the present case, the flow channel layer M3 is formed on the inlet layer 1k through a photoresist coating process, and a plurality of flow channel inlets M31, M31 are formed through a developing process. A cavity opening M32 and a plurality of inflow channels M33. The flow channel inlets M31 communicate with the fluid inlets I of the inlet layer 1k respectively. The flow channel inlet M31 and the inflow channel M33 are arranged around the opening M32 of the cavity. The inflow channel M33 communicates between the flow channel inlet M31 and the cavity opening M32. In the first embodiment of this case, the flow channel layer M3 has four flow channel inlets M31 and four inflow channels M33. In other embodiments, the number of flow channel inlets M31 and inflow channels M33 can be changed according to the design requirements, not in accordance with This is the limit. In the first embodiment of the present application, the channel layer M3 is a thick film photoresist, but it is not limited thereto.

Please refer to FIG. 2T and FIG. 2U. In the first embodiment of the present case, the resonant layer 1m is formed on the channel layer M3 through a rolling process, and a cavity through hole 11m and a plurality of second joints are formed through an etching process. Alignment mark AM2. The resonance layer 1m covers the cavity opening M32 of the channel layer M3, thereby defining an inflow cavity C1. The cavity through hole 11m communicates with the inflow chamber C1 of the channel layer M3. The second alignment mark AM2 is formed outside the resonant layer 1m. The resonant layer 1m extends outward from the cavity through hole 11m to a position corresponding to the outer edge of the inflow chamber C1 to define a movable portion 12m. The resonant layer 1m extends outward from the movable portion 12m to the second alignment mark AM2 to define a fixed portion 13m. It should be noted that the etching process for forming the resonant layer 1m is a dry etching process or a laser etching process, but not limited thereto.

Please refer to FIG. 2V. In the first embodiment of the present application, the resonant layer 1m is bonded on the second photoresist layer M2 through an inversion alignment process and a wafer bonding process. When the alignment process is reversed, the alignment mark window AW is used to align with the corresponding first alignment mark AM1 and the second alignment mark AM2 to complete the alignment process. It is worth noting that, in the first embodiment of the present case, since the channel layer M3 and the second substrate 1i are light-transmitting, during the reverse alignment process, the top-side transparent alignment (Top-Side Transparent Alignment) method can be used. Manual alignment is performed, so the alignment accuracy requirement is ±10μm. In the first embodiment of the present application, the resonant layer 1 m is made of a polyimide (PI) material, but it is not limited thereto.

Please refer to FIG. 2W. In the first embodiment of the present application, the second substrate 1i is removed by soaking the film adhesive layer 1j in a chemical to make the film adhesive layer 1j lose its viscosity. It is worth noting that in the first embodiment of this case, the time required to soak the film adhesive layer 1j is extremely short, and the material properties of the film adhesive layer 1j and the flow channel layer M3 are different, so the medicine will not react to the flow channel layer M3 , There will be no problem of swelling (Swelling).

Please refer to FIG. 2X to FIG. 2Z. In the first embodiment of the present case, the mask layer 1n is formed on the second surface 12a of the first substrate 1a through a silicon dioxide material deposition process, and a mask layer 1n is formed through an etching process. The curtain opening 11n and the plurality of mask holes 12n expose the first substrate 1a. An exit trench 13a and a plurality of auxiliary trenches 14a are formed through an etching process on the second surface 12a of the first substrate 1a along the mask opening 11n and the mask hole 12n respectively. The exit groove 13 a and the auxiliary groove 14 a have the same etching depth, and the etching depth is etched between the first surface 11 a and the second surface 12 a without contacting the cavity layer 1 b. The auxiliary grooves 14a are symmetrically disposed on opposite sides of the outlet groove 13a. A positioning post P is formed between each auxiliary groove 14a and the outlet groove 13a.

Please refer to FIG. 2AA and FIG. 2AB. In the first embodiment of the present case, the mask layer 1n is formed in the outlet groove 13a and the auxiliary groove 14a of the first substrate 1a through a silicon dioxide material deposition process, and through A plurality of first mask through-holes 13n and a plurality of second mask through-holes 14n are formed in the exit trench 13a through a precise drilling process. The second mask through hole 14n is symmetrically disposed outside the first mask through hole 13n. In the first embodiment of the present application, the aperture diameter of the first mask through hole 13n is smaller than the aperture diameter of the second mask through hole 14n, but it is not limited thereto. The penetration depth of the first mask through hole 13n and the second mask through hole 14n is until it contacts the first substrate 1a, so that the first substrate 1a is exposed. In the first embodiment of the present case, the precise drilling process is an excimer laser processing process, but it is not limited thereto.

Please refer to FIG. 2AC, FIG. 2AD and FIG. 5. In the first embodiment of the present case, the first substrate 1a is etched through a low-temperature deep etching process corresponding to the first mask through hole 13n and the second mask through hole. Portions of the holes 14n are used to form a plurality of first outflow holes 15a and a plurality of second outflow holes 16a of the first substrate 1a. The first outflow holes 15a are formed by etching along the first mask through holes 13n until they contact the cavity layer 1b, and the second outflow holes 16a are etched along the second mask through holes 14n to reach the cavity layer respectively. Layer 1b is formed until it contacts. Thereby, the second outflow hole 16a is disposed outside the first outflow hole 15a, and the diameter of each second outflow hole 16a is larger than the diameter of each first outflow hole 15a. In the first embodiment of the present application, the low-temperature deep etching process is a deep reactive ion etching process (BOSCH Process), but it is not limited thereto. In the first embodiment of the present application, each first outflow hole 15 a and each second outflow hole 16 a has a square cross-section, but not limited thereto.

It is worth noting that in the first embodiment of the present case, the mask layer 1n utilizes an excimer laser processing process to form the first mask through hole 13n and the second mask through hole 14n to overcome the difficulty of coating the photoresist and contact light. Mask exposure is difficult to focus and other issues. In addition, in the first embodiment of this case, the deep reactive ion etching process (BOSCH Process) is a low-temperature process, which can avoid the high temperature generated by processing, which will affect the polarity distribution of the rear-end piezoelectric material and cause depolarization reactions. Furthermore, in the first embodiment of the present case, the through-hole formed by the deep reactive ion etching process (BOSCH Process) has a high aspect ratio (Aspect Ratio), so the etching depth of the through-hole is preferably 100 μm, so that the diameter of the through-hole can reach 10 μm or less, thereby maintaining the strength of the structure. In the first embodiment of the present application, the setting of the outlet trench 13a reduces the through hole formed by the deep reactive ion etching process (BOSCH Process).

Please refer to FIG. 2AD. In the first embodiment of the present application, the cavity layer 1b is etched inside a fluid storage chamber C3 through a wet etching process. That is, the permeating etchant flows in from the first mask through hole 13n and the second mask through hole 14n, flows to the cavity layer 1b through the first outflow hole 15a and the second outflow hole 16a, and then etches and releases Portions of the chamber layer 1b are removed, thereby defining the reservoir chamber C3. Accordingly, the flow storage chamber C3 communicates with the first outflow hole 15 a and the second outflow hole 16 a. It should be noted that when the reservoir chamber C3 is formed through the wet etching process, the mask layer 1n will also be removed. After the formation of the flow storage chamber C3 and the removal of the mask layer 1n are completed, the first outflow hole 15a and the second outflow hole 16a communicate with the outlet groove 13a.

It is worth noting that, in the first embodiment of the present case, since the distance between the two sides around the storage chamber C3 is slightly greater than the distance between the two sides of the outlet groove 13a, the diameter of each second outflow hole 16a is larger than that of each first one. The setting of the diameter of the outflow hole 15a is beneficial to the cavity side erosion of the storage chamber C3.

Referring to FIGS. 2AE to 2AG , in the first embodiment of the present application, the third photoresist layer M4 is formed on the entrance layer 1k through a rolling process, and a plurality of third photoresist openings M41 are formed through a developing process. The third photoresist opening M41 is disposed corresponding to the positions of the upper electrode pad 13g and the lower electrode pad 14g. The upper electrode pad 13g and the lower electrode pad 14g remove the structure on the upper electrode pad 13g and the lower electrode pad 14g through an etching process, so that the upper electrode pad 13g and the lower electrode pad 14g are exposed. In the first embodiment of the present application, the third photoresist layer M4 is a hard mask dry film photoresist, but it is not limited thereto. It is worth noting that, in order to avoid insufficient structural support after the first substrate 1a is etched, the coating of the third photoresist layer M4 may also be formed after the wafer bonding process of the resonant layer 1m and the second photoresist layer M2 is completed. carried out, but not limited to.

Please refer to FIG. 2AH and FIG. 5. In the first embodiment of the present case, the array hole sheet 1o has a plurality of hole sheet holes 11o and a plurality of positioning holes 12o, and is attached to the outlet groove of the first substrate 1a through an adhesive process. groove 13a and auxiliary groove 14. The orifice holes 11o, the first outflow hole 15a and the second outflow hole 16a are misaligned with each other, thereby closing the first outflow hole 15a and the second outflow hole 16a to form a one-way valve, avoiding the flow of fluid during transmission. Fluid backflow occurs. The positioning pillars P of the first substrate 1a respectively pass through the positioning holes 12o. In the first embodiment of the present case, the setting of the positioning post P on the first substrate 1a enables manual positioning when pasting the array hole sheet 1o, and is fixed by gluing. In other embodiments, the array hole sheet 1o can be optically fixed. Positioning is performed in an automatic alignment manner, so that the arrangement density of the hole 11o of the array hole 1o and the first outflow hole 15a and the second outflow hole 16a of the first substrate 1a can be increased. In the first embodiment of the present application, the diameter of each positioning hole 12 o is larger than the diameter of each positioning post P by 50 μm, but it is not limited thereto. In the first embodiment of the present application, the hole array 1o is made of polyimide (PI), but it is not limited thereto. In the first embodiment of the present application, the hole array 1o has two positioning holes 12o. In other embodiments, the number of the positioning holes 12o can be changed according to design requirements, and is not limited thereto.

Please refer to FIG. 3. It is worth noting that in the first embodiment of the present case, the two fluid grooves 11c of the vibrating layer 1c are respectively formed on opposite sides of the vibrating layer 1c in the longitudinal direction. In this way, with the lateral support of the vibrating layer 1c, the This makes the vibration layer 1c have a better deformation in the longitudinal direction.

Please refer to FIG. 1A, FIG. 1B, and FIG. 6A to FIG. 6E. In the first embodiment of this case, the specific action mode of the microfluidic actuator 100 is to provide driving power with different phase charges to the upper electrode pad 13g and the lower electrode pad 13g. The electrode pad 14g is used to drive and control the vibration region 12c of the vibration layer 1c to generate up and down displacement. As shown in FIG. 1A and FIG. 6A, when a negative voltage is applied to the upper electrode pad 13g and a positive voltage is applied to the lower electrode pad 14g, the actuation area 11e of the piezoelectric actuation layer 1e drives the vibration area 12c of the vibration layer 1c toward The displacement is in the direction close to the first substrate 1a. Thus, the external fluid is sucked into the microfluidic actuator 100 from the fluid inlet I, and the fluid entering the microfluidic actuator 100 then flows through the flow channel inlet M31 and the inflow channel M33 of the flow channel layer M3 to the It flows into the chamber C1, and then flows into the inner resonance chamber C2 through the cavity through hole 11m of the resonance layer 1m. As shown in FIG. 1A and FIG. 6B , stop applying voltage to the upper electrode pad 13g and the lower electrode pad 14g, so that the actuation area 11e of the piezoelectric actuation layer 1e drives the vibration area 12c of the vibration layer 1c back to the unactuated state. moving position. At this time, the movable part 12m of the resonant layer 1m is displaced due to resonance, and is displaced toward the direction close to the first substrate 1a and attached to the waterproof layer 1h, so that the cavity through hole 11m of the resonant layer 1m is not in contact with the resonant chamber C2. connected. Thereby, the fluid in the resonance chamber C2 is squeezed and flows into the fluid storage chamber C3 of the cavity layer 1b through the fluid groove 11c of the vibrating layer 1c. As shown in Figure 1A and Figure 6C, then switch the electrical properties of the upper electrode pad 13g and the lower electrode pad 14g, apply a positive voltage to the upper electrode pad 13g and a negative voltage to the lower electrode pad 14g, so that the vibrating layer 1c The vibration region 12c is displaced in a direction away from the first substrate 1a, and the movable part 12m of the resonance layer 1m returns to the position where no resonance displacement occurs, so that the volume in the resonance chamber C2 is compressed by the vibration layer 1c, resulting in the collection of The fluid in the chamber C3 begins to inject into the first outflow hole 15a and the second outflow hole 16a. As shown in FIG. 1A and FIG. 6D , stop applying voltage to the upper electrode pad 13g and the lower electrode pad 14g, so that the actuation area 11e of the piezoelectric actuation layer 1e drives the vibration area 12c of the vibration layer 1c to return to the state that was not activated. actuation position. At this time, the movable part 12m of the resonant layer 1m is displaced due to resonance, and is displaced in a direction away from the first substrate 1a and attached to the entrance layer 1k, so that the cavity through hole 11m of the resonant layer 1m is not connected to the inflow chamber C1. connected. In this way, the fluid in the fluid storage chamber C3 is squeezed and then passes through the first outflow hole 15 a and the second outflow hole 16 a and then pushes away the orifice array 1 o . As shown in Figure 1A and Figure 6E, when the movable part 12m of the resonant layer 1m stops resonating and returns to the position where no resonance displacement occurs, the fluid passes through the hole 11o of the array hole 1o and is discharged into the microfluidic actuator 100 to complete the fluid transfer.

Please refer to FIG. 7A , the second embodiment of the present case is substantially the same as the first embodiment, except that the microfluidic actuator 100 ′ includes two actuating units 10 to increase the flow output.

Please refer to FIG. 7B. In other embodiments of the present case, the microfluidic actuator 100 "comprises a plurality of actuator units 10. The plurality of actuator units 10 can be arranged in series, in parallel or in series-parallel to increase the flow output. The arrangement of each actuating unit 10 can be designed according to the usage requirements, and is not limited thereto.

Please refer to Fig. 8, the third embodiment of this case is substantially the same as the first embodiment, the difference is that the positioning column P'" of the microfluidic actuator 100'" and the positioning hole 12o'" of the array hole sheet 1o'" are symmetrical Set at opposite corners of the first substrate 1a"', and each first outflow hole 15a'" and each second outflow hole 16a'" has a circular cross-section. In addition, the array hole sheet 1o'" has a The bracket part 13o'" is used to increase the stretching of the array hole sheet 1o'" to achieve the effect of a spring. In the third embodiment of the present application, the orifice array 1o'" can be used to filter impurities in the fluid, increasing the reliability and service life of the components in the microfluidic actuator 100'".

Referring to FIG. 9A to FIG. 9C , the fourth embodiment of the present case is substantially the same as the first embodiment, except that the inversion alignment process and the wafer bonding process are different. Since the heat conduction difference between the first substrate 1a and the second substrate 1i is large, and the wafer bonding process is prone to problems such as thermal stress and voids, the first substrate 1a, the cavity layer 1b, and the vibration layer are formed first. 1c, the first metal layer 1d, the piezoelectric actuation layer 1e, the isolation layer 1f, the second metal layer 1g, the waterproof layer 1h, the second photoresist layer M2 and the resonant layer 1m become a single semi-finished product, and then separately Rolling and developing processes are carried out on the layer 1k to form the flow channel layer M3, and finally the inlet layer 1k and the flow channel layer M3 are flipped over to perform optical double-sided alignment with the aforementioned single semi-finished product to complete bonding. In addition, in order to reduce the possibility of embrittlement of the first substrate 1a after the etching process, the active treatment can be performed before the bonding surface, so as to reduce the pressure during hot pressing. In the fourth embodiment of the present case, the inlet layer 1k is made of electroformed or stainless steel to increase the rigidity of the inlet layer 1k, but it is not limited thereto.

This case provides a microfluidic actuator, which is mainly completed by the microelectromechanical process, and by applying the driving power of different phase charges to the upper electrode pad and the lower electrode pad, the vibration area of the vibration layer Generate up and down displacement, and then achieve fluid transmission. In addition, by pasting a series of cracked holes on the outflow hole, it can be used as a one-way valve to avoid the phenomenon of fluid backflow.

This case can be modified in various ways by the people who are familiar with this technology, Ren Shijiang, but all of them do not break away from the intended protection of the scope of the attached patent application.

Claims (23)

1. A microfluidic actuator, characterized in that, comprising: A substrate has a first surface and a second surface, an outlet groove, a plurality of first outflow holes and a plurality of second outflow holes are formed through an etching process, and the outlet groove and the plurality of first outflow holes are formed. The outflow hole and the plurality of second outflow holes are connected, and the plurality of second outflow holes are arranged outside the plurality of first outflow holes; A cavity layer is formed on the first surface of the substrate through a deposition process, and a flow storage chamber is formed through an etching process, and the flow storage chamber is connected with the plurality of first outflow holes and the plurality of The second outflow hole is connected; A vibration layer is formed on the cavity layer through a deposition process, and a plurality of fluid grooves and a vibration region are formed through an etching process, and the plurality of fluid grooves are symmetrically formed on opposite sides of the vibration layer, thereby Define the vibration zone; A first metal layer is formed on the vibration layer through a deposition process, and a lower electrode region, a plurality of barrier regions and a plurality of gaps are formed through an etching process, and the lower electrode region is formed at a position corresponding to the vibration region, The plurality of gaps are formed between the lower electrode region and the plurality of barrier regions, and the plurality of barrier regions are correspondingly formed outside the plurality of fluid grooves; A piezoelectric actuation layer is formed on the first metal layer through a deposition process, and an active region is formed at a position corresponding to the lower electrode region of the first metal layer through an etching process; an isolation layer is formed on the piezoelectric actuation layer and the first metal layer through a deposition process, and a plurality of spacers are formed in the plurality of gaps through an etching process; A second metal layer is formed on the piezoelectric actuation layer, the first metal layer and the isolation layer through a deposition process, and an upper electrode pad and a lower electrode pad are formed on the first metal layer through an etching process. Electrode pad; A waterproof layer is formed on the first metal layer, the second metal layer and the isolation layer through a coating process, and exposes the upper electrode pad and the lower electrode pad through an etching process; a photoresist layer formed on the first metal layer, the second metal layer and the waterproof layer through a developing process; an inlet layer, forming a plurality of fluid inlets through etching process or laser process; A flow channel layer is formed on the inlet layer, and an inflow chamber, a plurality of inflow channels and a plurality of flow channel inlets are formed through a photolithography process, and the plurality of flow channel inlets are respectively connected to the plurality of fluids of the inlet layer The inlets are connected, the plurality of inflow channels and the plurality of flow channel inlets are arranged around the inflow chamber, and the plurality of inflow channels are communicated between the plurality of flow channel inlets and the inflow chamber; A resonant layer is formed on the channel layer through a rolling process, a cavity through hole is formed through an etching process, and bonded on the photoresist layer through an inversion alignment process and a wafer bonding process; and An array of holes is formed on the substrate through a bonding process, the array of holes has a plurality of holes, the plurality of holes and the plurality of first outflow holes and the plurality of second outflow holes dislocated with each other, thereby sealing the plurality of first outflow holes and the plurality of second outflow holes of the substrate; Wherein, the driving power supply with different phase charges is provided to the upper electrode pad and the lower electrode pad to drive and control the vibration region of the vibration layer to move up and down, so that the fluid is sucked from the plurality of fluid inlets and passes through the A plurality of inflow channels flow to the inflow chamber, then flow to the resonance chamber through the cavity through hole, flow to the storage chamber through the plurality of fluid grooves, and finally are squeezed through the plurality of first The outflow holes and the plurality of second outflow holes are pushed away from the array of holes and then discharged from the holes of the plurality of holes to complete fluid transmission. 2. The microfluidic actuator as claimed in claim 1, wherein the upper electrode pad and the lower electrode pad are respectively formed on opposite sides of the piezoelectric actuation layer. 3. The microfluidic actuator as claimed in claim 1, wherein each of the second outflow holes has a diameter larger than that of each of the first outflow holes. 4 . The microfluidic actuator as claimed in claim 1 , wherein a plurality of auxiliary grooves are formed on the substrate through an etching process, symmetrically formed on opposite sides of the outlet groove. 5 . The microfluidic actuator as claimed in claim 4 , wherein a positioning column is formed between each of the auxiliary grooves and the outlet groove, and the positioning column is used for positioning the array plate. 6. The microfluidic actuator as claimed in claim 1, wherein the substrate is a silicon substrate. 7. The microfluidic actuator as claimed in claim 1, wherein the cavity layer is a silicon dioxide material. 8. The microfluidic actuator as claimed in claim 1, wherein the vibration layer is a silicon nitride material. 9. The microfluidic actuator as claimed in claim 1, wherein the first metal layer is a titanium nitride metal material. 10. The microfluidic actuator as claimed in claim 1, wherein the first metal layer is a tantalum metal material. 11. The microfluidic actuator as claimed in claim 1, wherein the isolation layer is a silicon dioxide material. 12. The microfluidic actuator as claimed in claim 1, wherein the second metal layer is a gold metal material. 13. The microfluidic actuator as claimed in claim 1, wherein the second metal layer is an aluminum metal material. 14. The microfluidic actuator according to claim 1, wherein the substrate is formed with the plurality of first outflow holes and the plurality of second outflow holes through a deep reactive ion etching process. 15. The microfluidic actuator as claimed in claim 1, wherein the cavity layer forms the fluid storage cavity through a wet etching process. 16. The microfluidic actuator of claim 1, wherein the photoresist layer is a thick film photoresist. 17. The microfluidic actuator as claimed in claim 1, wherein the resonant layer forms the cavity through hole through a dry etching process. 18. The microfluidic actuator as claimed in claim 1, wherein the resonant layer forms the cavity through hole through a laser etching process. 19. The microfluidic actuator according to claim 1, wherein a positive voltage is applied to the upper electrode pad and a negative voltage is applied to the lower electrode pad, so that the active area of the piezoelectric actuation layer drives The vibration region of the vibration layer is displaced in a direction away from the substrate. 20. The microfluidic actuator according to claim 1, wherein a negative voltage is applied to the upper electrode pad and a positive voltage is applied to the lower electrode pad, so that the actuation area of the piezoelectric actuation layer drives The vibration region of the vibration layer is displaced towards the direction close to the substrate. 21. The microfluidic actuator of claim 1, wherein: applying a negative voltage to the upper electrode pad and a positive voltage to the lower electrode pad, so that the actuation area of the piezoelectric actuation layer drives the vibration area of the vibration layer to move toward the direction close to the substrate, whereby the external Fluid is sucked into the microfluidic actuator from the plurality of fluid inlets, and the fluid entering the microfluidic actuator flows into the inflow chamber through the plurality of inflow channels in sequence, and then passes through the cavity The through hole flows to the resonance chamber, and finally collects in the storage chamber through the plurality of fluid grooves; and Converting the electrical properties of the upper electrode pad and the lower electrode pad, applying a positive voltage to the upper electrode pad and a negative voltage to the lower electrode pad, so that the vibration region of the vibration layer is displaced in a direction away from the substrate , causing the fluid collected in the fluid storage chamber to sequentially pass through the plurality of first outflow holes and the plurality of second outflow holes and then be discharged out of the microfluidic actuator from the plurality of orifice holes, Complete fluid transfer. 22. A microfluidic actuator, characterized in that, comprising a plurality of actuating units, each actuating unit comprising: A substrate has a first surface and a second surface, an outlet groove, a plurality of first outflow holes and a plurality of second outflow holes are formed through an etching process, and the outlet groove and the plurality of first outflow holes are formed. The outflow hole and the plurality of second outflow holes are connected, and the plurality of second outflow holes are arranged outside the plurality of first outflow holes; A cavity layer is formed on the first surface of the substrate through a deposition process, and a flow storage chamber is formed through an etching process, and the flow storage chamber is connected with the plurality of first outflow holes and the plurality of The second outflow hole is connected; A vibration layer is formed on the cavity layer through a deposition process, and a plurality of fluid grooves and a vibration region are formed through an etching process, and the plurality of fluid grooves are symmetrically formed on opposite sides of the vibration layer, thereby Define the vibration zone; A first metal layer is formed on the vibration layer through a deposition process, and a lower electrode region, a plurality of barrier regions and a plurality of gaps are formed through an etching process, and the lower electrode region is formed at a position corresponding to the vibration region, The plurality of gaps are formed between the lower electrode region and the plurality of barrier regions, and the plurality of barrier regions are correspondingly formed outside the plurality of fluid grooves; A piezoelectric actuation layer is formed on the first metal layer through a deposition process, and an active region is formed at a position corresponding to the lower electrode region of the first metal layer through an etching process; an isolation layer is formed on the piezoelectric actuation layer and the first metal layer through a deposition process, and a plurality of spacers are formed in the plurality of gaps through an etching process; A second metal layer is formed on the piezoelectric actuation layer, the first metal layer and the isolation layer through a deposition process, and an upper electrode pad and a lower electrode pad are formed on the first metal layer through an etching process. Electrode pads; A waterproof layer is formed on the first metal layer, the second metal layer and the isolation layer through a coating process, and exposes the upper electrode pad and the lower electrode pad through an etching process; a photoresist layer formed on the first metal layer, the second metal layer and the waterproof layer through a developing process; an inlet layer, forming a plurality of fluid inlets through etching process or laser process; A flow channel layer is formed on the inlet layer, and an inflow chamber, a plurality of inflow channels and a plurality of flow channel inlets are formed through a photolithography process, and the plurality of flow channel inlets are respectively connected to the plurality of fluids of the inlet layer The inlets are connected, the plurality of inflow channels and the plurality of flow channel inlets are arranged around the inflow chamber, and the plurality of inflow channels are communicated between the plurality of flow channel inlets and the inflow chamber; A resonant layer is formed on the channel layer through a rolling process, a cavity through hole is formed through an etching process, and bonded on the photoresist layer through an inversion alignment process and a wafer bonding process; and An array of holes is formed on the substrate through a bonding process, the array of holes has a plurality of holes, the plurality of holes and the plurality of first outflow holes and the plurality of second outflow holes dislocated with each other, thereby sealing the plurality of first outflow holes and the plurality of second outflow holes of the substrate; Wherein, the driving power supply with different phase charges is provided to the upper electrode pad and the lower electrode pad to drive and control the vibration region of the vibration layer to move up and down, so that the fluid is sucked from the plurality of fluid inlets and passes through the A plurality of inflow channels flow to the inflow chamber, then flow to the resonance chamber through the cavity through hole, flow to the storage chamber through the plurality of fluid grooves, and finally are squeezed through the plurality of first The outflow holes and the plurality of second outflow holes are pushed away from the array of holes and then discharged from the holes of the plurality of holes to complete fluid transmission; and Wherein, the plurality of actuating units are connected in series, in parallel or in series and parallel, so as to increase the transmission flow of the fluid. 23. A microfluidic actuator, characterized in that it comprises: A substrate having a first surface and a second surface, at least one outlet groove, a plurality of first outflow holes and a plurality of second outflow holes are formed through an etching process, the at least outlet groove and the plurality of outflow holes The first outflow hole and the plurality of second outflow holes are connected; A cavity layer is formed on the first surface of the substrate through a deposition process, and at least one flow storage chamber is formed through an etching process, the at least flow storage chamber is connected with the plurality of first outflow holes and the A plurality of second outflow holes are connected; A vibration layer is formed on the cavity layer through a deposition process, and a plurality of fluid grooves and at least one vibration region are formed through an etching process, and the plurality of fluid grooves are symmetrically formed on opposite sides of the vibration layer, thereby defining the at least one vibration zone; A first metal layer is formed on the vibration layer through a deposition process, and at least a lower electrode region, a plurality of barrier regions and a plurality of gaps are formed through an etching process, and the at least a lower electrode region is formed corresponding to the at least one vibration The location of the region, the plurality of gaps are formed between the at least lower electrode region and the plurality of barrier regions; a piezoelectric actuation layer formed on the first metal layer through a deposition process, and at least one active region is formed at a position corresponding to the at least lower electrode region of the first metal layer through an etching process; an isolation layer is formed on the piezoelectric actuation layer and the first metal layer through a deposition process, and a plurality of spacers are formed in the plurality of gaps through an etching process; A second metal layer is formed on the piezoelectric actuation layer, the first metal layer and the isolation layer through a deposition process, and at least one upper electrode pad is formed on the first metal layer through an etching process and At least one electrode pad; A waterproof layer is formed on the first metal layer, the second metal layer and the isolation layer through a coating process, and exposes the at least one upper electrode pad and the at least one lower electrode pad through an etching process; a photoresist layer formed on the first metal layer, the second metal layer and the waterproof layer through a developing process; an inlet layer, forming a plurality of fluid inlets through etching process or laser process; A flow channel layer is formed on the inlet layer, and at least one inflow chamber, a plurality of inflow channels, and a plurality of flow channel inlets are formed through a photolithography process, and the plurality of flow channel inlets are respectively connected to the plurality of flow channel inlets of the inlet layer. The fluid inlets are connected, the plurality of inflow channels and the plurality of flow channel inlets are arranged around the at least one inflow chamber, and the plurality of inflow channels are communicated between the plurality of flow channel inlets and the at least one inflow chamber ; A resonant layer is formed on the channel layer through a rolling process, at least one cavity through hole is formed through an etching process, and bonded on the photoresist layer through an inversion alignment process and a wafer bonding process; and An array of holes is formed on the substrate through a bonding process, the array of holes has a plurality of holes, the plurality of holes and the plurality of first outflow holes and the plurality of second outflow holes dislocated with each other, thereby sealing the plurality of first outflow holes and the plurality of second outflow holes of the substrate; Wherein, the driving power supply with different phase charges is provided to the at least one upper electrode pad and the at least one lower electrode pad to drive and control the at least one vibration region of the vibration layer to move up and down, so that the fluid from the plurality of fluids Inlet suction, flow to the at least one inflow chamber through the plurality of inflow channels, then flow to the at least one resonance chamber through the at least one cavity through hole, and flow to the at least one storage flow through the plurality of fluid grooves The cavity is finally squeezed through the plurality of first outflow holes and the plurality of second outflow holes and pushes away the array of orifices, and then is discharged from the plurality of orifice holes to complete fluid transmission.