CN208458759U - A kind of laser photoelectricity reflection detection sensor - Google Patents
A kind of laser photoelectricity reflection detection sensor Download PDFInfo
- Publication number
- CN208458759U CN208458759U CN201821093291.3U CN201821093291U CN208458759U CN 208458759 U CN208458759 U CN 208458759U CN 201821093291 U CN201821093291 U CN 201821093291U CN 208458759 U CN208458759 U CN 208458759U
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- Prior art keywords
- laser
- electrode position
- detection sensor
- unit
- wiring board
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- 238000001514 detection method Methods 0.000 title claims abstract description 39
- 230000005622 photoelectricity Effects 0.000 title claims abstract description 25
- 238000004070 electrodeposition Methods 0.000 claims abstract description 54
- 238000005538 encapsulation Methods 0.000 claims abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 21
- 229910052737 gold Inorganic materials 0.000 claims description 21
- 238000003466 welding Methods 0.000 claims description 10
- 230000003321 amplification Effects 0.000 claims description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 7
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/28—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with deflection of beams of light, e.g. for direct optical indication
- G01D5/30—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with deflection of beams of light, e.g. for direct optical indication the beams of light being detected by photocells
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Abstract
The utility model relates to sensor technical fields, provide a kind of laser photoelectricity reflection detection sensor, including wiring board, laser emission element and laser pick-off unit, wiring board is equipped with route, first electrode position and second electrode position, and first electrode position and second electrode position are and connection；Laser emission element includes vertical cavity surface emitting laser type laser chip, and vertical cavity surface emitting laser type laser chip is connect with first electrode position, and laser pick-off unit is connect with second electrode position；Wiring board, laser emission element and laser pick-off unit pour film encapsulation by internal layer note, and internal layer note pours film and is equipped with guide-lighting path；Internal layer note pours film periphery and pours film equipped with outer layer note, and outer layer note pours film equipped with light-conductive hole；Low in energy consumption, high-efficient using vertical cavity surface emitting laser type laser chip, light emitting angle is small, and divergence is minimum, has higher detection accuracy；Overall volume is smaller, can be applied in short space, small items detection, slight distance detection etc. fields.
Description
Technical field
The utility model relates to sensor technical fields, are to be related to a kind of laser photoelectricity reflection detection biography more specifically
Sensor.
Background technique
With the development of science and technology, the every field of photoelectric sensor using more and more common, such as it can be used
In numerous areas such as object detection, distance detection, the mobile detections of object.
Currently, common photoelectric sensor is infrared photoelectric sensor, it is concentrated mainly on industrial application and consumer electronics
Detection part on.However, since infrared photoelectric sensor using infraluminescence chip generates infrared light, and infraluminescence chip
All have that power consumption height, low efficiency, light emitting angle be too big, the bulky problem of final package there are infraluminescence chip, thus nothing
Method accomplishes the application of efficient low-power consumption, can not accomplish the application of accurate angle short space, can not accomplish in micro-structure space
Interior realization measurement etc. at a distance, under the smaller and smaller trend of the volume of electronic product, conventional photoelectric sensor is in application side
The limitation in face is also increasing.
The above deficiency, has much room for improvement.
Utility model content
In order to overcome the shortcomings of that existing technology, the present invention provide a kind of laser photoelectricity reflection detection sensor.
Technical solution of the present invention is as described below:
A kind of laser photoelectricity reflection detection sensor, including wiring board, laser emission element and laser pick-off unit；
The wiring board is equipped with route, first electrode position and second electrode position, the first electrode position and described second
Electrode position with the connection；
The laser emission element includes vertical cavity surface emitting laser type laser chip, the vertical cavity surface-emitting laser
Type laser chip is connect with the first electrode position；
The laser pick-off unit is connect with the second electrode position；
The wiring board, the laser emission element and the laser pick-off unit pour film encapsulation, and institute by internal layer note
It states internal layer note and pours film equipped with guide-lighting path；
The internal layer note pours film periphery and pours film equipped with outer layer note, and the outer layer note pours film equipped with light-conductive hole.
Further, the first fixed bit and the second fixed bit are additionally provided on the wiring board；
The laser emission element is fixed on first fixed bit, and is electrically connected with the first electrode position；
The laser pick-off unit is fixed on second fixed bit, and is electrically connected with the second electrode position.
Further, the laser emission element is fixed on first fixed bit by high-precision die bond equipment, described
Laser pick-off unit is fixed on second fixed bit by high-precision die bond equipment.
Further, the vertical cavity surface emitting laser type laser chip passes through the first spun gold conducting wire and first electricity
The welding of pole position；
The laser pick-off unit is welded by the second spun gold conducting wire and the second electrode position.
Further, the first spun gold conducting wire is welded by device for ultrasonic welding and the first electrode position；
The second spun gold conducting wire is welded by device for ultrasonic welding and the second electrode position.
Further, the laser pick-off unit be equipped with integrated electro amplification chip, the integrated electro amplification chip with
The second electrode position connection.
Further, the wiring board is high temperature resistant wiring board.
Further, length, the width and thickness of the laser photoelectricity reflection detection sensor are respectively 2 millimeters, 1.6 millis
Rice and 0.75 millimeter.
A kind of beneficial effect of laser photoelectricity reflection detection sensor provided by the utility model is: using vertical cavity surface
Emitting laser type laser chip generates laser, and VCSEL laser chip has small in size, round output facula, single longitudinal mode defeated
Out, threshold current small, cheap, easy of integration the advantages that being large area array, is low in energy consumption, high-efficient, on the one hand, the hair of laser
Angular is small, and divergence is minimum, thus can have higher detection accuracy；On the other hand, using VCSEL laser chip
Laser photoelectricity reflection detection sensor volume can accomplish it is smaller, so as to be applied to short space in, minim physical examination
The fields such as survey, slight distance detection.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only that this is practical new
Some embodiments of type for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the structural schematic diagram of the utility model embodiment.
Wherein, each appended drawing reference in figure:
10- wiring board；101- first electrode position；102- second electrode position；The first fixed bit of 103-；104- second is fixed
Position；20- laser emission element；201- the first spun gold conducting wire；30- laser pick-off unit；301- the second spun gold conducting wire；40- internal layer
Note pours film；Internal layer note after 401- cutting pours film；50- outer layer note pours film；501- light-conductive hole.
Specific embodiment
In order to which technical problem to be solved in the utility model, technical solution and beneficial effect is more clearly understood, with
Lower combination accompanying drawings and embodiments, the present invention will be further described in detail.It should be appreciated that specific reality described herein
Example is applied only to explain the utility model, is not used to limit the utility model.
It should be noted that be referred to as " being fixed on " or " being set to " another component when component, it can directly or
It is located on another component indirectly.When a component referred to as " is connected to " another component, it can be directly or
It is connected on another component in succession.Term " on ", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top",
The orientation or position of the instructions such as "bottom", "inner", "outside" are orientation based on the figure or position, are merely for convenience of describing,
It should not be understood as the limitation to the technical program.Term " first ", " second " are used merely to facilitate description purpose, and should not be understood as
Indication or suggestion relative importance or the quantity for implicitly indicating technical characteristic.The meaning of " plurality " is two or more,
Unless otherwise specifically defined.
Referring to Fig. 1, a kind of laser photoelectricity reflects detection sensor, including wiring board 10, laser emission element 20 and swash
Light receiving unit 30, wiring board 10 are equipped with route, first electrode position 101 and second electrode position 102,101 He of first electrode position
Second electrode position 102 is and connection；Laser emission element 20 includes vertical cavity surface emitting laser type (Vertical
Cavity Surface Emitting Laser, is abbreviated as VCSEL) laser chip, vertical cavity surface emitting laser type laser core
Piece is connect with first electrode position 101, and laser pick-off unit 30 is connect with second electrode position 102.Wiring board 10, laser emission element
20 and laser pick-off unit 30 film 40 is poured by internal layer note and is encapsulated, and internal layer note pours film 40 and is equipped with guide-lighting path；Internal layer note pours film
40 peripheries are equipped with outer layer note and pour film 50, and outer layer note pours film 50 equipped with light-conductive hole 501.
When laser photoelectricity reflection detection sensor work, the VCSEL laser chip of laser emission element 20 generates laser,
Laser internal layer note pour film 40 guide-lighting path guidance under from outer layer note pour film 50 light-conductive hole 501 be emitted and expose to
It is reflected at detection object；The light-conductive hole 501 that the laser of reflection pours film 50 through outer layer note enters at laser pick-off unit 30, and
It is received by laser pick-off unit 30.
The beneficial effect of laser photoelectricity reflection detection sensor provided in this embodiment is: being swashed using vertical-cavity surface-emitting
Light type laser chip generates laser, and VCSEL laser chip has small in size, round output facula, single longitudinal mode output, threshold value
Electric current it is small, cheap, easy of integration for large area array, it is low in energy consumption, high-efficient the advantages that, on the one hand, the light emitting angle of laser
Small, divergence is minimum, thus can have higher detection accuracy；On the other hand, using the laser light of VCSEL laser chip
The volume of galvanic reflex detection sensor can accomplish it is smaller, so as to be applied to short space in, small items detection, it is small
The fields such as distance detection.
Further, the first fixed bit 103 and the second fixed bit 104, laser emission element 20 are additionally provided on wiring board 10
It is fixed on the first fixed bit 103, and is electrically connected with first electrode position 101；Laser pick-off unit 30 is fixed on the second fixed bit
104, and be electrically connected with second electrode position 102.By the way that the first fixed bit 103 and the second fixed bit 104 are arranged in assist side 10,
It is fixed so as to the position to laser emission element 20 and laser pick-off unit 30, so that overall stability is higher.
In one embodiment, laser emission element 20 is fixed on the first fixed bit 103 by high-precision die bond equipment, swashs
Light receiving unit 30 is fixed on the second fixed bit 104 by high-precision die bond equipment, not only easy to operate, but also die bond effect is good
It is good.It should be understood that in other embodiments, it is fixed that laser emission element 20 can also be fixed on first by other means
At position 103, laser pick-off unit 30 can also be fixed on by other means at the second fixed bit 104, herein with no restrictions.
Further, vertical cavity surface emitting laser type laser chip passes through the first spun gold conducting wire 201 and first electrode position
101 welding, first electrode position 101 is pad at this time, and spun gold conducting wire has good conductive effect, and it is hereby ensured that vertical cavities
Surface-emission laser type laser chip and first electrode position 101, which are electrically connected, stablizes.Laser pick-off unit 30 passes through the second spun gold
Conducting wire 301 and second electrode position 102 are welded, and second electrode position 102 is pad at this time, and spun gold conducting wire has good conductive effect
Fruit, it is hereby ensured that laser pick-off units 30 and second electrode position 102 to be electrically connected and stablize.
In one embodiment, the first spun gold conducting wire 201 is welded by device for ultrasonic welding and first electrode position 101,
Second spun gold conducting wire 301 is welded by device for ultrasonic welding and second electrode position 102, not only simple to operate, but also is welded
It connects and works well.It should be understood that in other embodiments, the first spun gold conducting wire 201 can also be by other means with
The welding of one electrode position 101, laser pick-off unit 30 can also be welded by other means with second electrode position 102, not done herein
Limitation.
Further, laser pick-off unit 30 is equipped with integrated electro amplification chip, integrated electro amplification chip and the second electricity
Pole position 102 connects.In the present embodiment, integrated electro amplification chip is welded by the second spun gold conducting wire 301 with second electrode position 102
It connects.
In one embodiment, wiring board 10 is high temperature resistant wiring board, so that it is guaranteed that laser photoelectricity reflects detection sensor
It also can work normally under the high temperature conditions, prevent from damaging because temperature is excessively high, prolong the service life.
Laser photoelectricity reflection detection sensor provided in this embodiment can be used under type such as and make:
Laser emission element 20 is fixed on by the first fixed bit 103 using high-precision die bond equipment first, while by laser
Receiving unit 30 is fixed on the second fixed bit 104.
Then use electrode points device for ultrasonic welding by the first spun gold conducting wire 201 and first of laser emission element 20
Electrode position 101 is welded, while the second spun gold conducting wire 301 of laser pick-off unit 30 being welded with second electrode position 102.
The wiring board 10 for completing above-mentioned spun gold conducting wire Joining Technology is put into injecting glue in particular manufacturing craft to form, thus in obtaining
Layer note pours film 40, then carries out the internal layer after guide-lighting path optical texture dividing processing is cut using accurate micro- cutting equipment
Note pours film 401, while pouring in internal layer note and forming guide-lighting path in film 40.
The wiring board 10 for completing above-mentioned guide-lighting path optical texture dividing processing technique is put into again and is opened with oriented light-guiding
Injecting glue forms in the mold in hole, so that obtaining outer layer note pours film 50, outer layer note pours film 50 equipped with light-conductive hole 501, light-conductive hole 501
Quantity be preferably two, it is corresponding with laser emission element 20 and laser pick-off unit 30 respectively.
When being produced, the batch production of multiple groups array can be designed according to mold output efficiency, and list is obtained by cutting
A laser photoelectricity reflects detection sensor.Length, the width and thickness of laser photoelectricity reflection detection sensor are respectively 2 millis
Rice, 1.6 millimeters and 0.75 millimeter, thus volume is very small and structure novel, whole optical path signal-to-noise ratio are high, optical direction
Angle agreement is good, strong antijamming capability, application field are wide, and the flexibility of product and the application of short space greatly improved.
It is convenient for being integrated in electronic equipment simultaneously, it is ensured that the volume of electronic equipment can further reduce.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Made any modifications, equivalent replacements, and improvements etc., should be included in the utility model within the spirit and principle of utility model
Protection scope within.
Claims (8)
1. a kind of laser photoelectricity reflects detection sensor, it is characterised in that: including wiring board, laser emission element and laser pick-off
Unit；
The wiring board is equipped with route, first electrode position and second electrode position, the first electrode position and the second electrode
Position with the connection；
The laser emission element includes vertical cavity surface emitting laser type laser chip, the vertical cavity surface emitting laser type
Laser chip is connect with the first electrode position；
The laser pick-off unit is connect with the second electrode position；
The wiring board, the laser emission element and the laser pick-off unit pour film encapsulation by internal layer note, and described interior
Layer note pours film and is equipped with guide-lighting path；
The internal layer note pours film periphery and pours film equipped with outer layer note, and the outer layer note pours film equipped with light-conductive hole.
2. laser photoelectricity as described in claim 1 reflects detection sensor, it is characterised in that: be additionally provided with the on the wiring board
One fixed bit and the second fixed bit；
The laser emission element is fixed on first fixed bit, and is electrically connected with the first electrode position；
The laser pick-off unit is fixed on second fixed bit, and is electrically connected with the second electrode position.
3. laser photoelectricity as claimed in claim 2 reflects detection sensor, it is characterised in that: the laser emission element passes through
High-precision die bond equipment is fixed on first fixed bit, and the laser pick-off unit is fixed on institute by high-precision die bond equipment
State the second fixed bit.
4. laser photoelectricity as claimed in claim 2 reflects detection sensor, it is characterised in that: the vertical cavity surface-emitting laser
Type laser chip is welded by the first spun gold conducting wire and the first electrode position；
The laser pick-off unit is welded by the second spun gold conducting wire and the second electrode position.
5. laser photoelectricity as claimed in claim 4 reflects detection sensor, it is characterised in that: the first spun gold conducting wire passes through
Device for ultrasonic welding and the first electrode position are welded；
The second spun gold conducting wire is welded by device for ultrasonic welding and the second electrode position.
6. laser photoelectricity as described in claim 1 reflects detection sensor, it is characterised in that: the laser pick-off unit is equipped with
Integrated electro amplification chip, the integrated electro amplification chip are connect with the second electrode position.
7. laser photoelectricity as claimed in any one of claims 1 to 6 reflects detection sensor, it is characterised in that: the wiring board is
High temperature resistant wiring board.
8. laser photoelectricity as claimed in any one of claims 1 to 6 reflects detection sensor, it is characterised in that: the laser photoelectricity
Length, the width and thickness for reflecting detection sensor are respectively 2 millimeters, 1.6 millimeters and 0.75 millimeter.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821093291.3U CN208458759U (en) | 2018-07-11 | 2018-07-11 | A kind of laser photoelectricity reflection detection sensor |
| PCT/CN2018/095927 WO2020010640A1 (en) | 2018-07-11 | 2018-07-17 | Laser photoelectronic reflection detection sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821093291.3U CN208458759U (en) | 2018-07-11 | 2018-07-11 | A kind of laser photoelectricity reflection detection sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208458759U true CN208458759U (en) | 2019-02-01 |
Family
ID=65171603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821093291.3U Expired - Fee Related CN208458759U (en) | 2018-07-11 | 2018-07-11 | A kind of laser photoelectricity reflection detection sensor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN208458759U (en) |
| WO (1) | WO2020010640A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112254750A (en) * | 2020-11-09 | 2021-01-22 | 宁波升谱光电股份有限公司 | SMD distance proximity sensor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3391888B2 (en) * | 1994-06-07 | 2003-03-31 | 株式会社リコー | Light reflection type sensor and its detection method |
| CN1530680A (en) * | 2003-03-14 | 2004-09-22 | 中国科学院半导体研究所 | Optical Transceiver Integrated Module of Vertical Cavity Surface Emitting Laser |
| US8779361B2 (en) * | 2009-06-30 | 2014-07-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Optical proximity sensor package with molded infrared light rejection barrier and infrared pass components |
| CN202995100U (en) * | 2012-12-31 | 2013-06-12 | 深圳市易飞扬通信技术有限公司 | Laser optical fiber coupling component including flexible printed circuit board |
| CN104597575A (en) * | 2014-12-25 | 2015-05-06 | 武汉电信器件有限公司 | Multi-wavelength multiplexing/demultiplexing parallel light receiving/emitting component |
-
2018
- 2018-07-11 CN CN201821093291.3U patent/CN208458759U/en not_active Expired - Fee Related
- 2018-07-17 WO PCT/CN2018/095927 patent/WO2020010640A1/en active Application Filing
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112254750A (en) * | 2020-11-09 | 2021-01-22 | 宁波升谱光电股份有限公司 | SMD distance proximity sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020010640A1 (en) | 2020-01-16 |
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Granted publication date: 20190201 |