CN207818517U - Photoemission ionization source based on graphene - Google Patents
Photoemission ionization source based on graphene Download PDFInfo
- Publication number
- CN207818517U CN207818517U CN201721732004.4U CN201721732004U CN207818517U CN 207818517 U CN207818517 U CN 207818517U CN 201721732004 U CN201721732004 U CN 201721732004U CN 207818517 U CN207818517 U CN 207818517U
- Authority
- CN
- China
- Prior art keywords
- graphene
- ionization source
- source according
- layer
- photoemission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 205
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 160
- -1 power supply Chemical compound 0.000 claims abstract 4
- 239000010410 layer Substances 0.000 claims description 85
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 23
- 239000002041 carbon nanotube Substances 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 14
- 239000002356 single layer Substances 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 13
- 229910002114 biscuit porcelain Inorganic materials 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000001105 regulatory effect Effects 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000006185 dispersion Substances 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052753 mercury Inorganic materials 0.000 claims description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000005622 photoelectricity Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 4
- 238000013007 heat curing Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 6
- 150000001336 alkenes Chemical class 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000001871 ion mobility spectroscopy Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
The utility model provides a kind of photoemission ionization source based on graphene, including power supply, first electrode, Graphene electrodes and photic emitter, the anode of the power supply is connect with first electrode, the cathode of the power supply is connect with Graphene electrodes, and the photic emitter is irradiated the Graphene electrodes；Wherein, the Graphene electrodes include：Supporter, the supporter include first surface and second surface；It is set to the graphene-structured layer of supporter first surface；The graphene-structured layer and first electrode are opposite, and between first electrode there are sample by channel.
Description
Technical field
The utility model is related to a kind of photoelectric ion source devices, and in particular to a kind of light based on Graphene electrodes
The ion source of electrical effect, belongs to photoelectric field.
Background technology
Ion source is to make neutral atom or molecular ionization, and therefrom draw the device of ion beam current.It is various types of
Ion accelerator, mass spectrograph, calutron, ion implantation apparatus, ion beam etching device, ion propeller and by
Control the indispensable component of the equipment such as the neutral-beam injector in fusion facility.
The collision of gas discharge, electron beam to gas atom (or molecule), charged particle beam make operation material sputter and
Surface ionization process can generate ion, and be brought out bunchy.According to different use condition and purposes, have been developed that at present more
The ion source of type.There are Arc-discharge ion source, PIG ion sources, double-plasma ion source and double Peng Yuan using wide
These sources are all based on process gas discharge, and it is then by the height in gas to be often broadly known as arc source radio frequency ion source
Frequency discharges to generate ion, also has been widely used.The appearance in novel heavy-ion source makes the charge state of heavy ion significantly carry
Height, wherein more ripe has Electron cyclotron resonance ion source (ECR) and electron beam ion source (EBIS).
Ionization source is one of key technologies of analytical instrument such as particle migration spectrum.Traditional ion mobility spectrometry commonly ionizes
Source is radioactivity63Ni ionization sources.63Ni can radiate the β rays that average energy is 17Kev, pass through a series of complex with carrier gas
Reaction, eventually form reagent ion H3O+(positive ion detection pattern) and O2 -(anionic textiles pattern), reagent ion again with
Sample to be tested reacts so that sample to be tested is ionized.Radioactivity63Ni ionization sources are since it is simple, stablize, is not necessarily to externally fed
The advantages that and obtain the favor of scientist, but the safety inspection brought due to its radioactivity and special safety measure give it
Practical application bring many troubles.In addition63The ion concentration that Ni ionization sources generate is not high enough, leads to traditional ion mobility spectrometry
Signal is weaker, and the range of linearity is small.Therefore people seek Non-radioactivity ionization source in positive in recent years, traditional to replace
Radioactivity63Ni ionization sources.
To solve the above problems, China utility model CN1961403A discloses a kind of nanometer in mass spectrometer
Carbon pipe ion source, including：Electronic emitter configures it to control the first control grid of electron beam transmitting and configure to control electricity
Second control grid of beamlet energy；Ionization chamber has the electron beam outlet for making electron beam enter ionization chamber；Electron lens,
It assembles electronics element between electron emitter assembly and ionization chamber；With at least one electrode, it is located at ion beam and exports
Nearby with the ionization sample molecules of aggregation discharge ionization chamber；Photoelectric effect is carried out to generate using carbon nanotube in the technical solution
Ion, carbon nanotube is relatively low for the reflectance factor opposing metallic of light, but production process is complicated, and needs to spend more
Time.China utility model CN106024573A discloses a kind of photoemission ionization source, including power supply, the positive grade of power supply with
First electrode connects, the power cathode connecting line second electrode, and intermediate between the first electrode and second electrode there are samples
Mouthful by channel, the second electrode includes transparent substrates, and the side of the transparent substrates is provided with graphene layer, the stone
Black alkene layer is oppositely arranged with the first electrode, and the other side of the transparent substrates is provided with this outside line generation for irradiation
Device.The graphene layer passes through directly graphene coated formation on the transparent substrate.The coating used in this technology
Graphene powder is to make electrode material, and lower to the reflectance factor of light, efficiency of light absorption is not ideal enough.
The content of background technology part is only the technology that utility model people is known, natural representative this field does not show
There is technology.
Utility model content
For the prior art there are one or more of problem, the utility model provides a kind of photoelectricity based on graphene
Emit ionization source, including power supply, first electrode, Graphene electrodes and photic emitter, the anode of the power supply and the first electricity
Pole connects, and the cathode of the power supply is connect with Graphene electrodes, and the photic emitter shines the Graphene electrodes
It penetrates；Wherein, the Graphene electrodes include：
Supporter, the supporter include first surface and second surface；
It is set to the graphene-structured layer of supporter first surface；
The graphene-structured layer and first electrode are opposite, and between first electrode there are sample by channel.
One side according to the present utility model, the thickness of the graphene-structured layer be the thickness of single-layer graphene extremely
100nm, such as：0.335nm、0.67nm、1nm、2nm、3nm、5nm、6nm、8nm、10nm、12nm、15nm、20nm、30nm、
40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.；It is preferred that 10nm is hereinafter, for example：0.335nm、0.67nm、1nm、
2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, etc..
One side according to the present utility model, the graphene-structured layer include single-layer graphene or two layers or more graphite
The stacking of alkene.
One side according to the present utility model, the single-layer graphene or two layers or more graphene are stacked as using
The graphene film that CVD method is prepared.
One side according to the present utility model, the graphene-structured layer further include carbon nanotubes and/or Graphene powder.
One side according to the present utility model, the graphene-structured layer are the combination of carbon nanotubes and graphite film.
Specifically, the first surface of the supporter is equipped with nano-sized carbon tube layer, and the surface of the nano-sized carbon tube layer is arranged one layer or two
Layer or more stack graphene film.
One side according to the present utility model, the carbon nanotubes use multiple-wall carbon nanotube.
The fineness ratio of one side according to the present utility model, the carbon nanotubes is 1000:1 or more.
One side according to the present utility model, the nano-sized carbon tube layer are fixed on the first surface of the supporter.
One side according to the present utility model, the carbon nanotubes are coated on support in the form of carbon nanotubes dispersion liquid
On the first surface of body, nano-sized carbon tube layer is formed after heated solidification.At this point, nano-sized carbon tube layer is one layer of pure carbon nanotubes
Powder is fixed on the first surface of supporter, and solvent volatilizees removal during heating.
Preferably, the surface density of the carbon nanotubes of the nano-sized carbon tube layer is 0.6-3mg/cm2。
One side according to the present utility model, the graphene-structured layer are Graphene powder and the group of graphene film
It closes.Specifically, the supporter first surface is arranged graphene bisque, the Graphene powder layer surface setting single layer or two layers with
The graphene film of upper stacking.
Preferably, the graphene bisque is coated on thermosetting after the supporter first surface by the dispersion liquid of Graphene powder
Change.
One side according to the present utility model, the thickness of the graphene bisque are 1-100nm, such as 1nm, 2nm,
3nm, 5nm, 6nm, 8nm, 10nm, 12nm, 15nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm,
Deng；It is preferred that 1-10nm is hereinafter, for example：1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, etc..
One side according to the present utility model, the supporter are hard material.
One side according to the present utility model, the supporter are rigid transparent material.
One side according to the present utility model, the supporter are quartz glass.
One side according to the present utility model, the supporter are that the first electrode is to electric grade.
One side according to the present utility model, the first electrode are tabular or aperture plate shape.
One side according to the present utility model, the anode of the power supply connect with the graphene-structured layer of Graphene electrodes
It connects.
The second surface of one side according to the present utility model, the supporting layer is provided with temperature regulating device, the temperature control
Device includes the heating elements such as electric hot plate, electrothermal ring or heating wire.
One side according to the present utility model, the photic emitter are set to the outside of temperature regulating device.
One side according to the present utility model, the photic emitter use ultraviolet emission device.
One side according to the present utility model, the ultraviolet emission device include diode, xenon lamp, krypton lamp, mercury lamp
Or the ultraviolet generator of at least one of ultraviolet laser.
The utility model additionally provides a kind of electrode of photoemission ionization source, for the above-mentioned photoelectricity hair based on graphene
Penetrate the Graphene electrodes described in ionization source.
Description of the drawings
Attached drawing is used to provide a further understanding of the present invention, and a part for constitution instruction, with this practicality
Novel embodiment for explaining the utility model, does not constitute limitations of the present invention together.In the accompanying drawings：
Fig. 1 is the structural representation of the photoemission ionization source based on graphene of one embodiment according to the present utility model
Figure；
Fig. 2 is the structural representation of the photoemission ionization source based on graphene of one embodiment according to the present utility model
Figure；
Fig. 3 is the structural representation of the photoemission ionization source based on graphene of one embodiment according to the present utility model
Figure；
Fig. 4 is the structural representation of the photoemission ionization source based on graphene of one embodiment according to the present utility model
Figure.
Specific implementation mode
Hereinafter, certain exemplary embodiments are simply just described.As one skilled in the art will recognize that
Like that, without departing from the spirit or scope of the present utility model, it can be changed by various different modes described real
Apply example.Therefore, attached drawing and description are considered essentially illustrative rather than restrictive.
In the description of the present invention, it should be understood that the orientation or position of the instructions such as term " inside " " outside "
Relationship is to be based on the orientation or positional relationship shown in the drawings, and is " inside " close to ion source sample channel side, far from ion source
Sample channel side is " outside ".In addition, term " first ", " second " are used for description purposes only, and should not be understood as instruction or
It implies relative importance or implicitly indicates the quantity of indicated technical characteristic.The spy of " first ", " second " is defined as a result,
Sign can explicitly or implicitly include one or more feature.In the description of the present invention, " multilayer "
It is meant that two layers or two layers or more, unless otherwise specifically defined.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " is pacified
Dress ", " be connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection:It can be mechanical connection, can also be to be electrically connected or can mutually communicate；It can be directly connected, it can also be in
Between medium be indirectly connected, can be the interaction relationship of the connection or two elements inside two elements.For this field
For those of ordinary skill, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
Following disclosure provides many different embodiments or example is used for realizing the different structure of the utility model.
In order to simplify the disclosure of the utility model, hereinafter the component of specific examples and setting are described.Certainly, they are only
Example, and purpose does not lie in limitation the utility model.In addition, the utility model can in different examples repeat reference numerals
And/or reference letter, this repetition are for purposes of simplicity and clarity, itself not indicate discussed various embodiments
And/or the relationship between setting.In addition, the example for the various specific techniques and material that the utility model provides, but this
Field those of ordinary skill can be appreciated that the application of other techniques and/or the use of other materials.
The preferred embodiment of the utility model is illustrated below in conjunction with attached drawing, it should be understood that described herein excellent
It selects embodiment to be only used for describing and explaining the present invention, is not used to limit the utility model.
Embodiment 1：
As shown in Figure 1, a kind of photoemission ionization source based on graphene, can be used for various types of ion accelerators,
Mass spectrograph, calutron, electron injection machine, ion beam etching device, ion propeller and controlled fusion device
In the equipment such as the fast injector of neutrality.
The photoemission ionization source based on graphene of the present embodiment is described in detail below with reference to Fig. 1.As shown in Figure 1, this
Embodiment displaying the photoemission ionization source based on graphene, include at least power supply 10, first electrode 1, Graphene electrodes 2,
Ultraviolet emission device 4.
The anode of the power supply is connect with first electrode 1；The cathode of the power supply connects Graphene electrodes 2, described the
There are samples to pass through channel among one electrode 1 and Graphene electrodes 2.The first electrode 1 be to electrode, can be used tabular or
Aperture plate shape.The Graphene electrodes 2 include the supporter 22 of clear hard, which can select quartz glass, play branch
The effect of graphene structure sheaf 21 is fixed in support.The supporter 22 includes first surface 221 surface of inside (supporter 22), the
Two surfaces 222 (surface in 22 outside of supporter), first surface 221 is opposite with first electrode 1, in the first table of the supporter
A layer graphene film 210 is provided on face 221, the graphene film 210 constitutes the stone of the Graphene electrodes 2 of the present embodiment
The thickness of black alkene structure sheaf 21, the graphene-structured layer is the thickness of single-layer graphene.The graphene-structured layer 21 and institute
It states first electrode 1 to be oppositely arranged, the cathode of power supply 10 is specifically connect with the graphene-structured layer 21 of Graphene electrodes 2, can be passed through
The cathode of power supply 10 is connect with 3 edge of supporter pressing lead at 21 edge of graphene-structured layer.Graphene film 210 is CVD
The graphene of production transfers graphene to the first surface 221 of supporter 22 by the method transfer that graphene shifts.
In the present embodiment, in order to further enhance the photoelectric effect of ionization source, in the second surface 222 of the supporter 22
The temperature regulating device 3 of temperature can be adjusted by being provided with.Heating plate, heating ring, heating coil etc. may be used in temperature regulating device 3.Institute
The outside for stating temperature regulating device 3 is provided with ultraviolet generation device 4 for irradiation.It can select diode, xenon lamp, krypton lamp, mercury lamp
Or the equipment that ultraviolet laser etc. can generate ultraviolet light.
The operation principle of photoelectric ion source based on graphene is as follows：When sample enters Graphene electrodes by channel
2 and the ionized region 20 (i.e. sample passes through channel) between electrode 1, the ultraviolet generation device 4 transmitting ultraviolet light is irradiated to
In the Graphene electrodes 2, the graphene of extra electric field issues third contact of a total solar or lunar eclipse electrical effect to electromagnetic radiation electronics in the irradiation of ultraviolet light,
Sample is set to charge.
The graphene layer 21 is the graphene of CVD productions, is shifted by the method that graphene shifts and shifts graphene
The number of plies to the surface of supporter 22, graphene is 1-10 layers.
The temperature regulating device 3 that temperature can be adjusted is not essential, and temperature regulating device can be heating plate, is heated ring, is added
Heat coil etc..
The ultraviolet generation device 4 can select diode, xenon lamp, krypton lamp, mercury lamp or ultraviolet laser etc. that can produce
The equipment of raw ultraviolet light.
Embodiment 2：
As shown in Fig. 2, embodiment shows another structures of the photoemission ionization source based on graphene, with implementation
The photoemission ionization source based on graphene shown by example 1 difference lies in：The graphene-structured layer 21 is two layers of graphite
The stacking of alkene film 210, i.e.,：It is provided with two layers of graphene film on the first surface 221 of the supporter.May be used will
The graphene film of the single layer of CVD method production is transferred to the first surface 221 of supporter by graphene transfer method, described
Form a layer graphene film 210 on the first surface 221 of supporter, same transfer method, then first on supporter
Layer graphene film shifts a layer graphene film 210.
On the basis of the present embodiment, can also continue to supporter shift graphene film, formed 3 layers, 4 layers, 5
Layer, 6 layers, 7 layers, 8 layers, 9 layers, 10 layers etc. more layers graphene film stacked structure.
Embodiment 3：
As shown in figure 3, embodiment shows another structures of the photoemission ionization source based on graphene, with implementation
The photoemission ionization source based on graphene shown by example 1 difference lies in：The graphene-structured layer 21 includes graphene
Film 210 and nano-sized carbon tube layer 212.Nano-sized carbon tube layer 212 is set in the first surface 221 of the supporter 22, then to nanometer
Shift graphene film 210 prepared by one layer of CVD method in 212 surface of carbon tube layer.
On the basis of the present embodiment, the CVD method system of two or more layers can also be shifted to 212 surface of nano-sized carbon tube layer
Standby graphene film 210.
Embodiment 4：
As shown in figure 4, embodiment shows another structures of the photoemission ionization source based on graphene, with implementation
The photoemission ionization source based on graphene shown by example 1 difference lies in：The graphene-structured layer 21 includes graphene
Film 210 and graphene bisque 213.Graphene bisque 213 is set in the first surface 221 of the supporter 22, then to graphite
Shift graphene film 210 prepared by one layer of CVD method in 213 surface of alkene bisque.Coating can be used in the formation of graphene bisque 213
Mode graphene bisque is set on the first surface 221 of supporter 22.Such as：First in a solvent by graphene dispersion,
Dispersion liquid is coated on the first surface 221 of supporter again.The method that the utility model is not limited to the citing, it is existing can be real
The method that Graphene powder is now formed in supporting body surface.
On the basis of the present embodiment, the CVD method system of two or more layers can also be shifted to 212 surface of nano-sized carbon tube layer
Standby graphene film 210.
The graphene or use carbon nanotubes, Graphene powder that the utility model is grown using the CVD method of single-layer or multi-layer
Electrode material of the combination as ion source with CVD graphenes, is radioactivity with traditional common ionization source of ion mobility spectrometry63Ni ionization sources compare photic emission effciency higher, due to using single layer compared with individual carbon nanotubes, coating Graphene electrodes
Or the graphene film of multilayer, not only thickness of electrode can control 10nm hereinafter, the efficiency of ultraviolet light induced transmitting also obtains
Effective raising.The utility model ionization source has advantage as follows：
1. being radioactivity with traditional common ionization source of ion mobility spectrometry63Ni ionization sources are more compared to photic emission effciency
Height, compared with individual carbon nanotubes disclosed in CN106024573A, coating Graphene electrodes, the utility model is due to using single
Layer or multilayer graphene film thickness can control 10nm hereinafter, single-layer graphene thickness be 0.335nm, it is ultraviolet light induced
What is emitted is more efficient.
In 2.CN106024573A is pure coating graphene, the reflectance factor of light as electrode material graphene layer
Height, absorptivity are low, for a long time or after multiple transmitting, are be easy to causeing graphene layer chemical stability drop bottom, service life
It reduces.In the utility model, the graphene-structured layer 21 that Graphene electrodes use is than the graphene layer pair in CN106024573A
The reflectance factor of light is lower, and efficiency of light absorption greatly improves, and the unique texture based on graphene film is easier launching electronics, tool
Standby better chemical stability.
3. further including the heating device of controllable temperature in the utility model, on the outside of the Graphene electrodes, described in heating
The mode of Graphene electrodes helps electronics to overcome the potential barrier of work function, can further increase the efficiency of photoemission.
4. in the utility model, the graphene-structured layer of the Graphene electrodes is transferred to by the transfer method of CVD
On bright substrate, operation is simpler, is more convenient.
Finally it should be noted that：The above descriptions are merely preferred embodiments of the present invention, is not limited to this
Utility model, although the utility model is described in detail with reference to the foregoing embodiments, for those skilled in the art
For, it still can be with technical scheme described in the above embodiments is modified, or to which part technical characteristic
Carry out equivalent replacement.Within the spirit and principle of the utility model, any modification, equivalent replacement, improvement and so on,
It should be included within the scope of protection of this utility model.
Claims (29)
1. a kind of photoemission ionization source based on graphene, including power supply, first electrode, Graphene electrodes and photic transmitting dress
It sets, the anode of the power supply is connect with first electrode, and the cathode of the power supply is connect with Graphene electrodes, the photic transmitting dress
It sets and the Graphene electrodes is irradiated；Wherein, the Graphene electrodes include：
Supporter, the supporter include first surface and second surface；
It is set to the graphene-structured layer of supporter first surface；
The graphene-structured layer and first electrode are opposite, and between first electrode there are sample by channel.
2. the photoemission ionization source according to claim 1 based on graphene, which is characterized in that the graphene-structured
The thickness of layer is the thickness of single-layer graphene to 100nm.
3. the photoemission ionization source according to claim 2 based on graphene, which is characterized in that the graphene-structured
The thickness of layer is in 10nm or less.
4. the photoemission ionization source according to claim 1 based on graphene, which is characterized in that the graphene-structured
Layer includes the stacking of single-layer graphene or two layers or more graphene.
5. the photoemission ionization source according to claim 4 based on graphene, which is characterized in that the single-layer graphene
Or the graphene film for being stacked as being prepared using CVD method of two layers or more graphene.
6. the photoemission ionization source according to claim 4 or 5 based on graphene, which is characterized in that the graphene
Structure sheaf further includes carbon nanotubes and/or Graphene powder.
7. the photoemission ionization source according to claim 6 based on graphene, which is characterized in that the graphene-structured
Layer is the combination of carbon nanotubes and graphite film.
8. the photoemission ionization source according to claim 7 based on graphene, which is characterized in that the of the supporter
One surface is equipped with nano-sized carbon tube layer, and the graphene more than the surface setting one or two layers of the nano-sized carbon tube layer stacked is thin
Film.
9. the photoemission ionization source according to claim 7 or 8 based on graphene, which is characterized in that the nano-sized carbon
Pipe uses multiple-wall carbon nanotube.
10. the photoemission ionization source according to claim 9 based on graphene, which is characterized in that the carbon nanotubes
Fineness ratio be 1000:1 or more.
11. the photoemission ionization source according to claim 8 based on graphene, which is characterized in that the carbon nanotubes
Layer is fixed on the first surface of the supporter.
12. the photoemission ionization source according to claim 11 based on graphene, which is characterized in that the carbon nanotubes
It is coated on the first surface of supporter in the form of carbon nanotubes dispersion liquid, forms nano-sized carbon tube layer after heated solidification.
13. the photoemission ionization source according to claim 8 based on graphene, which is characterized in that the carbon nanotubes
The surface density of the carbon nanotubes of layer is 0.6-3mg/cm2。
14. the photoemission ionization source according to claim 6 based on graphene, which is characterized in that the graphene knot
Structure layer is the combination of Graphene powder and graphene film.
15. the photoemission ionization source according to claim 14 based on graphene, which is characterized in that the supporter
Graphene bisque is arranged in one surface, and the graphene film that single layer or two layers or more stack is arranged in the Graphene powder layer surface.
16. the photoemission ionization source according to claim 15 based on graphene, which is characterized in that the Graphene powder
Heat cure forms after layer is coated on the supporter first surface by the dispersion liquid of Graphene powder.
17. the photoemission ionization source according to claim 15 based on graphene, which is characterized in that graphene bisque
Thickness is 1-100nm.
18. the photoemission ionization source according to claim 15 based on graphene, which is characterized in that graphene bisque
Thickness is 1-10nm.
19. the photoemission ionization source according to claim 1 based on graphene, which is characterized in that the supporter is
Hard material.
20. the photoemission ionization source according to claim 19 based on graphene, which is characterized in that the supporter is
Rigid transparent material.
21. the photoemission ionization source according to claim 20 based on graphene, which is characterized in that the supporter is
Quartz glass.
22. the photoemission ionization source according to claim 1 based on graphene, which is characterized in that the first electrode
For to electric grade.
23. the photoemission ionization source according to claim 22 based on graphene, which is characterized in that the first electrode
For tabular or aperture plate shape.
24. the photoemission ionization source according to claim 1 based on graphene, which is characterized in that the power supply is just
The graphene-structured layer of pole and Graphene electrodes connects.
25. the photoemission ionization source according to claim 1 based on graphene, which is characterized in that the supporter
Second surface is provided with temperature regulating device, and the temperature regulating device includes the heating elements such as electric hot plate, electrothermal ring or heating wire.
26. the photoemission ionization source according to claim 25 based on graphene, which is characterized in that the photic transmitting
Device is set to the outside of temperature regulating device.
27. the photoemission ionization source according to claim 1 based on graphene, which is characterized in that the photic transmitting
Device uses ultraviolet emission device.
28. the photoemission ionization source according to claim 27 based on graphene, which is characterized in that the ultraviolet light hair
Injection device includes the ultraviolet generator of at least one of diode, xenon lamp, krypton lamp, mercury lamp or ultraviolet laser.
29. a kind of electrode of photoemission ionization source is photoelectricity hair of the claim 1-28 any one of them based on graphene
Penetrate the Graphene electrodes described in ionization source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721732004.4U CN207818517U (en) | 2017-12-13 | 2017-12-13 | Photoemission ionization source based on graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721732004.4U CN207818517U (en) | 2017-12-13 | 2017-12-13 | Photoemission ionization source based on graphene |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207818517U true CN207818517U (en) | 2018-09-04 |
Family
ID=63332126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721732004.4U Active CN207818517U (en) | 2017-12-13 | 2017-12-13 | Photoemission ionization source based on graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207818517U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108109892A (en) * | 2017-12-13 | 2018-06-01 | 无锡格菲电子薄膜科技有限公司 | Photoemission ionization source based on graphene |
-
2017
- 2017-12-13 CN CN201721732004.4U patent/CN207818517U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108109892A (en) * | 2017-12-13 | 2018-06-01 | 无锡格菲电子薄膜科技有限公司 | Photoemission ionization source based on graphene |
| CN108109892B (en) * | 2017-12-13 | 2024-03-29 | 常州第六元素半导体有限公司 | Ion source based on photoelectric effect of graphene electrode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW391022B (en) | Field emission electron source, method of producing the same, and use of the same | |
| Jeong et al. | Flexible field emission from thermally welded chemically doped graphene thin films | |
| CN103311089B (en) | Photoelectric ion source based on CNT | |
| Homola et al. | Atmospheric Dry Hydrogen Plasma Reduction of Inkjet‐Printed Flexible Graphene Oxide Electrodes | |
| Yi et al. | Crack-assisted field emission enhancement of carbon nanotube films for vacuum electronics | |
| CN103318868A (en) | Preparation method for semiconducting single-wall carbon nanotube | |
| US20130240032A1 (en) | Dye-Sensitized Solar Cell Using Nitrogen Doped Carbon-Nano-Tube and Method for Manufacturing the Same | |
| CN207818517U (en) | Photoemission ionization source based on graphene | |
| CN100482582C (en) | Carbon nano-tube preparation method and apparatus | |
| CN108109892A (en) | Photoemission ionization source based on graphene | |
| CN100564252C (en) | Gas atom-encapsulated fullerene manufacturing device, manufacturing method, and gas atom-encapsulated fullerene | |
| JP2000268741A (en) | Carbon atom cluster ion generating apparatus and carbon atom cluster ion generating method | |
| Attri et al. | Plasma modification of poly (2-heptadecyl-4-vinylthieno [3, 4-d] thiazole) low bandgap polymer and its application in solar cells | |
| Li et al. | Enhancing field emission properties of ZnO nanowires via atomic layer deposition coated ultrathin TiN films | |
| CN104756221A (en) | Nano granular materials (ngm) material, methods and arrangements for manufacturing said material and electrical components comprising said material | |
| TW201025416A (en) | Method of making air-fired cathode assemblies in field emission devices | |
| Zhang et al. | Efficient surface-conduction field emission electron sources from tin oxide film | |
| CN113943932B (en) | Preparation method of graphene field emission source | |
| TWI240295B (en) | Manufacturing method for cathode of carbon nanotube field emission display and carbon nanotube field emission display | |
| US20060213774A1 (en) | Method for enhancing homogeneity and effeciency of carbon nanotube electron emission source of field emission display | |
| TWI262530B (en) | Field emitting two-sided monitor, two-sided back light module, multi- surface liquid-crystal display, two-sided lighting equipment and manufacturing methods thereof | |
| KR100543959B1 (en) | Induction of Field Emission Using Shell-Shaped Carbon Microparticles | |
| CN102502571B (en) | Method for preparing single-wall carbon nanotube oriented film by magnetically induced arc discharge method | |
| Tsai et al. | Fabrication of diamond Schottky emitter array by using electrophoresis pre-treatment and hot-filament chemical vapor deposition | |
| Li et al. | Controllable Synthesis of Multicolor‐Light‐Emitting Carbon Dots via Gas–Liquid Repetitive Pulsed Discharges: The Role of Graphitic Nitrogen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190308 Address after: No. 518-5 Zhonghui Road, Standard Factory Building of Chang'an Industrial Park, Huishan Economic Development Zone, Wuxi City, Jiangsu Province, 214000 Patentee after: Wuxi Sixth Element Electronic Film Technology Co., Ltd. Address before: No. 518-5 Zhonghui Road, Standard Factory Building of Chang'an Industrial Park, Huishan Economic Development Zone, Wuxi City, Jiangsu Province, 214000 Patentee before: Wuxi Gefei Electronic Film Technology Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 213100 floor 1, building 4, No. 6, Xiangyun Road, West Taihu science and Technology Industrial Park, Changzhou City, Jiangsu Province Patentee after: Changzhou sixth element Semiconductor Co.,Ltd. Address before: No. 518-5 Zhonghui Road, Standard Factory Building of Chang'an Industrial Park, Huishan Economic Development Zone, Wuxi City, Jiangsu Province, 214000 Patentee before: WUXI SIXTH ELEMENT ELECTRONIC FILM TECHNOLOGY Co.,Ltd. |