CN207637801U - The encapsulating structure of image sensing chip - Google Patents

Abstract

The embodiment of the present application discloses a kind of encapsulating structure of image sensing chip.In the encapsulating structure encapsulating structure, image sensing chip is located in the through-hole of substrate, and the front of the image sensing chip is equal with the first surface of substrate.So, in the encapsulating structure, the height of image sensing chip is controlled using substrate first surface as benchmark, since the first surface of substrate will not change in encapsulation process, therefore, in the encapsulating structure, the uncontrollable factor for influencing image sensing chip height there's almost no, therefore, the height of image sensing chip can be relatively accurately controlled by the encapsulating structure, be conducive to reduce the deviation between the actual height and design height of image sensing chip, so that the actual height and design height of image sensing chip are almost the same, so, it can realize the stringent control to the distance between the lens above image sensing chip and its, to improve the image quality of image sensor.

Description

The encapsulating structure of image sensing chip

Technical field

This application involves chip encapsulation technology field more particularly to a kind of encapsulating structures of image sensing chip.

Background technology

Traditional image sensing chip-packaging structure generally use wire bonding (Wire Bonding) is packaged, but with The rapid development of integrated circuit, longer lead makes product size be unable to reach desirable.With the development of technology, brilliant Circle grade encapsulation gradually replaces wire bond package, and wafer-level packaging is current more common packaging method.

A kind of existing wafer level packaging structure is as shown in Figure 1, image sensing chip 11 is bonded and fixed at by viscose 12 On substrate 13.Lens 14 above image sensing chip 11, the lens 14 support by lens carrier 15.

In wafer level packaging structure shown in Fig. 1, by way of bonding mode stabilized image sensing chip 11, because glutinous The presence of glue 12, and the thickness of viscose 12 is difficult control, causes the height of image sensing chip 11 to be not easily controlled, leads to image Deviation between the actual height and design height of sensing chip 11 is larger, therefore, in this encapsulating structure, image sensing core The distance between piece 11 and lens 14 above it are also more difficult to control so that image sensing chip 11 and the lens 14 above it Between actual range and designed distance deviation it is also larger.And in order to ensure the image quality of image sensor, it is necessary to stringent control Image sensing chip processed and the distance between the lens above it, minimize the deviation between actual range and designed distance. Thus, wafer level packaging structure shown in FIG. 1 is difficult the image quality for controlling image sensor.

Invention content

In view of this, the embodiment of the present application provides a kind of encapsulating structure of image sensing chip, strictly to control image The height of sensing chip, to improve the image quality of image sensor.

In order to solve the above-mentioned technical problem, the application uses following technical solution：

A kind of encapsulating structure of image sensing chip, including：Substrate and at least one image sensing chip；

The substrate includes opposite first surface and second surface, is formed on the substrate at least one through described The through-hole of first surface and second surface；The first weldering being electrically connected with image sensing chip front side is provided on the first surface Pad；The second weld pad for being electrically connected with external circuit is additionally provided on the second surface of the substrate；It is set inside the substrate It is equipped with the electric connection structure for being electrically connected the first weld pad and the second weld pad；

The image sensing chip is located in the through-hole and positive and the first table of substrate of the image sensing chip Face is equal；Photosensitive area and the third weld pad other than the photosensitive area are provided in the image sensing chip front side, it is described Third weld pad is electrically connected with the first weld pad by lead realization.

Compared to the prior art, the application has the advantages that：

Based on above technical scheme it is found that in the encapsulating structure of image sensing chip provided by the embodiments of the present application, image Sensing chip is located in the through-hole of substrate, and the front of the image sensing chip is equal with the first surface of substrate.In this way, at this In encapsulating structure, the height of image sensing chip is controlled using substrate first surface as benchmark, due to the of substrate One surface will not change in encapsulation process, and therefore, in the encapsulating structure, influence image sensing chip height can not Control factor there's almost no, and therefore, the height of image sensing chip can relatively accurately be controlled by the encapsulating structure, favorably In reduce image sensing chip actual height and design height between deviation so that the actual height of image sensing chip with Design height is almost the same, so, it is possible to realize the stringent control to the distance between lens above image sensing chip and its System, to improve the image quality of image sensor.

Description of the drawings

In order to which the scheme of the present invention and the prior art is expressly understood, the technology of the present invention and the prior art is described below Attached drawing used in scheme does a brief description.It should be evident that these attached drawings are only the section Examples of the present invention, this field Technical staff can also obtain other attached drawings under the premise of not making the creative labor.

Fig. 1 is the wafer level packaging structure schematic diagram of the existing image sensing chip in this field；

Fig. 2A is the image sensing chip-packaging structure diagrammatic cross-section that one specific implementation of the embodiment of the present application provides；

Fig. 2 B are the encapsulating structure vertical view for the image sensing chip that one specific implementation of the embodiment of the present application provides；

Fig. 2 C are the encapsulating structure vertical view for the image sensing chip that another specific implementation of the embodiment of the present application provides；

Fig. 3 is the image sensing chip-packaging structure section signal that another specific implementation of the embodiment of the present application provides Figure；

Fig. 4 is the image sensing chip-packaging structure section signal that the another specific implementation of the embodiment of the present application provides Figure；

Fig. 5 is the image sensing chip-packaging structure section signal that the another specific implementation of the embodiment of the present application provides Figure；

Fig. 6 is the image sensing chip-packaging structure section signal that the another specific implementation of the embodiment of the present application provides Figure；

Fig. 7 is the image sensing chip-packaging structure section signal that the another specific implementation of the embodiment of the present application provides Figure；

Fig. 8 is the image sensing chip packaging method flow diagram that one specific implementation of the embodiment of the present application provides；

Fig. 9 A to Fig. 9 F are one system of image sensing chip packaging method that one specific implementation of the embodiment of the present application provides The corresponding cross-sectional view of row flow.

Reference sign：

11：Image sensing chip,

12：Viscose,

13：Substrate,

14：Lens,

15：Lens carrier；

21：Substrate,

22：Image sensing chip,

21a：First surface,

21b：Second surface,

211：Through-hole,

212：First weld pad,

213：Second weld pad,

214：Electric connection structure,

221：Photosensitive area,

222：Third weld pad,

23：Lead,

24：Capsulation material,

25：Pedestal,

26：Transparent protective layer,

27：Seal cavity,

28：Support construction,

29：Camera lens die set,

291：Lens,

292：Lens carrier,

91：Coating.

Specific implementation mode

As described in the background section, it in order to ensure the image quality of image sensor, needs strictly to control image sensing Chip and the distance between the lens above it, keep the actual range and designed distance substantially close, control and exist therebetween The error of very little.

And the influence factor of the distance between image sensing chip and lens above it includes the height of image sensing chip Therefore the height of degree and lens in order to strictly control image sensing chip and the distance between the lens above it, needs tight Lattice control the height of image sensing chip and/or the height of lens.

The embodiment of the present application realizes stringent control image in terms of the height for how strictly controlling image sensing chip Sensing chip and the distance between the lens above it, and then improve the image quality of image sensor.

In order to strictly control the height of image sensing chip, image sensing chip is embedded into substrate by the embodiment of the present application In through-hole, and in order to preferably control the height of image sensing chip, by the front of image sensing chip and the first of substrate Surface is equal, and substitute it is existing by image sensing chip by adhesives substrate surface method because, substrate The height of first surface will not change in encapsulation process, therefore, the height and design of image sensing chip after packaging Height is consistent.Therefore, the embodiment of the present application can reduce the actual height of image sensing chip and the deviation of design height, It realizes the stringent control to image sensing chip height, and then improves the image quality of image sensor.

The specific implementation mode of the application is described in detail below in conjunction with the accompanying drawings.It should be appreciated that these specific implementations Mode is not intended to limit the application, structure, method or the work(that those of ordinary skill in the art are made according to these embodiments Transformation on energy is all contained in the protection domain of the application.

In order to make the above objects, features, and advantages of the present application more apparent, below in conjunction with the accompanying drawings to the application Specific implementation mode be described in detail.When the embodiment of the present application is described in detail, for purposes of illustration only, indicating the section of device architecture Figure can disobey general proportion and make partial enlargement, and the schematic diagram is example, should not limit the protection of the application herein Range.In addition, three-dimensional space that should be comprising length, width and depth in actual fabrication.

Please refer to Fig. 2A to Fig. 2 B.Fig. 2A is the encapsulating structure section knot of image sensing chip provided by the embodiments of the present application Structure schematic diagram, Fig. 2 B are the encapsulating structure vertical view of image sensing chip provided by the embodiments of the present application.Such as Fig. 2A and Fig. 2 B institutes Show, the encapsulating structure 200 of the image sensing chip includes：

Substrate 21 and image sensing chip 22,

Wherein, substrate 21 includes opposite first surface 21a and second surface 21b, is formed at least on the substrate 21 One through-hole 211 for running through the first surface 21a and second surface 21b；

The first weld pad 212 is provided on the first surface 21a of substrate 21；

The second weld pad 213 is provided on the second surface 21b of substrate 21, second weld pad 213 for realizing substrate 21 with The electrical connection of external circuit.

Substrate 21 is internally provided with electric connection structure 214, the electric connection structure 214 for realizing the first weld pad 212 with The electrical connection of second weld pad 213.

Image sensing chip 22 is located in through-hole 211, and the front of image sensing chip 22 and 21 first surface 21a of substrate Towards same direction, and the two is in the same plane, i.e. the front of image sensing chip 22 and 21 first surface 21a phases of substrate It is flat.

The front of image sensing chip 22 is provided with photosensitive area 221 and the third weld pad other than photosensitive area 221 222, photosensitive area 221 is electrically connected with third weld pad 222 and (is not shown in Fig. 2).Third weld pad 222 and 21 first surface 21a of substrate Upper corresponding first weld pad 212 is realized by lead 23 to be electrically connected.

In this way, between external circuit and image sensing chip 22 by the second weld pad 213 for being electrically connected to each other, be electrically connected binding Structure 214, the first weld pad 212, third weld pad 222 realize the transmission of signal.

In addition, the specific example as the application, the thickness of image sensing chip 22 can be less than the thickness of substrate 21, Because the front of image sensing chip 22 is equal with the first surface 21a of substrate 21, therefore, the back side of image sensing chip 22 and base There are difference in height between the second surface 21b of plate 21, in order to fill up the difference in height, not by image sensing chip 22 in through-hole 221 The region of occupancy can be filled with capsulation material 24.

In addition, as in the embodiment of the present application, image sensing chip 22 is the semiconductor at least having image sensing unit Chip, image sensing unit can be cmos sensor or ccd sensor, can also have in image sensing chip 22 and shadow The associated circuit being connected as sensing unit.

As the specific example of the application, the first weld pad 212 can be the metal for convexedly stretching in 21 first surface 21a of substrate Welding block, or the metal wiring layer being laid on 21 first surface 21a of substrate.Similarly, the second weld pad 213 may be convex Stretch in the metal welding block of 21 second surface 21b of substrate, or the metal line being laid on 21 second surface 21b of substrate Layer.

The third weld pad 222 being set on 22 front of image sensing chip can be 22 positive metal of image sensing chip Welding block, or the metal wiring layer being formed on 22 front of image sensing chip.

As the specific example of the application, for making the first weld pad 212, the second weld pad 213 and third weld pad 222 Material can be Al, Au or Cu.

It is to be appreciated that in the embodiment of the present application, in the encapsulating structure of image sensing chip, each through-hole on substrate 21 There are one image sensing chips 22 for setting in 211, wherein the front of each image sensing chip 22 with the first table of substrate 21 Face 21a is equal, so, it is ensured that the front of each image sensing chip 22 is respectively positioned on same plane.The corresponding structure As shown in above-mentioned Fig. 2A and Fig. 2 B.

As the another specific embodiment of the application, multiple image sensing cores can also be provided in a through-hole 211 Piece 22, wherein the front of each image sensing chip 22 is equal with the first surface 21a of substrate 21, so, it is ensured that should The front of each image sensing chip 22 is respectively positioned on same plane.The corresponding encapsulating structure vertical view is as shown in Figure 2 C.

As another specific example of the application, as shown in figure 3, in order to protect lead 23 not to be scraped off, lead 23 is moulded Closure material wraps up.In order to realize that lead 23 is wrapped up by capsulation material 24,21 first surface 21a of substrate and image sensing chip 22 are just Other than photosensitive area 221, other regions are wrapped up by capsulation material in face, form plastic package structure.

In addition, another specific example as the application, in order to facilitate the encapsulating structure and external electrical of image sensing chip Electrical connection is realized on road, as shown in figure 4, pedestal 25 can also be formed on the second weld pad 213.More specifically, the welding is convex Point 25 can be metal soldered ball, as an example, metallic tin ball may be used in the metal soldered ball.

The second surface 21b of substrate 21 can also be carried out for protective substrate 21 as the more specific example of the application Plastic package process, to form plastic package structure in the second surface side of substrate 21.Further, for the ease of image sensing chip Encapsulating structure is electrically connected with external circuit, after the completion of plastic package process, the plastic package structure to second surface side is needed to polish, To expose pedestal 25.In this way, in the sides second surface 21b of substrate 21, the region other than the second weld pad 213 is covered It is stamped capsulation material 24.In this way, capsulation material 24 can wrap up image sensing chip 22 and substrate, plastic package structure is formed.

In addition, another alternative embodiment as the application, photosensitive area 221 is by outside contamination in order to prevent, such as Fig. 5 institutes Show, can also include the first surface being arranged in substrate 21 shown in any of the above-described specific example on the basis of encapsulating structure The transparent protective layer 26 for protecting photosensitive area 221 on 21a.The transparent protective layer 26 can be anti reflection glass layer.In addition, The transparent protective layer 26 can also be plastic film.

It is to be appreciated that encapsulating structure shown in fig. 5 is the structure improved on above-mentioned encapsulating structure shown in Fig. 2. As the extension of the embodiment of the present application, transparent protective layer 26 can also be added on any encapsulating structures of Fig. 3 or shown in Fig. 4, To prevent photosensitive area 221 by outside contamination.

It is to be appreciated that because transparent protective layer 26 is transparent material layer, it, can be direct in subsequently assembling camera lens die set In 26 over-assemble of transparent protective layer, which can also be removed, in the first surface 21a over-assembles of substrate 21 Camera lens die set.Also, camera lens die set is assembled again after removal transparent protective layer 26, can make the image sensing to be formed Device be not in aberration or ghost etc. optical phenomenas, be conducive to the quality of image for improving image sensor.

As the specific example of the application, transparent protective layer 26 can with it is close adjacent on 21 first surface 21a of substrate, The corresponding cross-section structure is as shown in Figure 5.As another specific example of the application, as shown in fig. 6, transparent protective layer 26 and base There are certain distances between 21 first surface 21a of plate, so that being formed between transparent protective layer 26 and image sensing chip 22 Seal cavity 27, photosensitive area 221 are located in seal cavity 27, in this way, can prevent the contaminants such as dust photosensitive area 221. As the specific embodiment of the application, in order to enable forming seal cavity between transparent protective layer 26 and image sensing chip 22 27, the support construction 28 for being used to support transparent protective layer 26, the support construction 28 are formed on 21 first surface 21a of substrate Between transparent protective layer 26 and image sensing chip 22, three surrounds to form seal cavity 27.

In the embodiment of the present application, the material of support construction 28 can be photoresists, be formed in using exposure imaging technique On the first surface 21a of substrate 21.

In other embodiments, on the first surface 21a of substrate 21 can also have other devices, as resistance, inductance, Capacitance, integrated circuit block or optical module etc., specific type of device can be selected according to the type of substrate and image sensing chip It selects.

In above-mentioned Fig. 2A to the specific implementation of encapsulating structure shown in fig. 6, on the first surface 21a of substrate 21 It is not provided with camera lens die set.In order to be fabricated to image device, need to pacify camera lens die set when making image device On the first surface 21a of substrate 21, and 221 phase of photosensitive area of the lens in camera lens die set and image sensing chip 22 It is right.

As another specific implementation of the application, camera lens module group can also be set on substrate first surface 21a Part.The corresponding cross-sectional view of the specific implementation refers to Fig. 7.

It should be noted that is carried out on the basis of Fig. 7 is the encapsulating structure of image sensing chip shown in Fig. 2A changes Into the encapsulating structure of image sensing chip shown in the encapsulating structure and Fig. 2A of image sensing chip shown in Fig. 7 has all multiphases Like place, for the sake of brevity, its difference only is described emphatically herein, similarity refers to the associated description of Fig. 2A.

The encapsulating structure of image sensing chip as shown in Figure 7 may be used also other than with all parts shown in Fig. 2A To include：The camera lens die set 29 being set on the first surface 21a of substrate 21.

The camera lens die set 29 includes lens 291 and lens carrier 292, the lens carrier 292 and the substrate 21 First surface 21b be fixedly connected.As an example, lens carrier 292 can be bonded in the first table of substrate 21 by bonded adhesives On the 21a of face.In order to enable the light by lens 291 can be detected easily by photosensitive area 221, as an example, lens 291 with The photosensitive area 221 of image sensing chip 22 can be opposite.Moreover, as an example, an image can be corresponded to a lens 291 Sensing chip 22, can also a lens 291 correspond to multiple image sensing chips 22.

In the embodiment of the present application, there is certain space, therefore, in lens 291 and base between substrate 21 and lens 291 Other devices can also be formed on first surface between plate 21, the other devices can lens carrier 292 and substrate 21 it Between form high-density laminated structure, to be conducive to the miniaturization of device.In addition, in the first surface of lens 291 and substrate 21 Optical module, such as polariscope, infrared filter etc. can also be formed between 21a, for improve imaging sensor at image quality Amount.

It is to be appreciated that above-mentioned example is to add the example of camera lens die set on the basis of Fig. 2A encapsulating structures.As this The extension for applying for embodiment, can also add camera lens module group shown in Fig. 3 to Fig. 6 any examples on the basis of encapsulating structure Part.According to it is published add the realization method of camera lens die set on the basis of Fig. 2A encapsulating structures on the basis of, this field skill Art personnel add the encapsulation of camera lens die set on the basis of being readily conceivable that the encapsulating structure shown in Fig. 3 to Fig. 6 any examples The specific implementation of structure.For the sake of brevity, the specific implementation that details are not described herein.

Above-mentioned in the specific implementation of camera lens die set, the encapsulating structure of image sensing chip includes camera lens Die set, without the process of additional assembling camera lens die set, saves image biography in this way, when forming image sensor The assembling procedure of sensor.

It is the specific implementation of image sensing chip-packaging structure provided by the embodiments of the present application above.In upper specific reality In existing mode, image sensing chip 22 is encapsulated in the through-hole 211 of substrate 21, and the front as sensing chip 22 and substrate 21 First surface 21a is equal.In this way, in the encapsulating structure, the height of image sensing chip 22 is with 21 first surface 21a of substrate It is controlled as benchmark, since the first surface 21a of substrate 21 will not change in encapsulation process, at this In encapsulating structure, the uncontrollable factor for influencing image sensing chip height there's almost no, therefore, can be with by the encapsulating structure The height for relatively accurately controlling image sensing chip, be conducive to reduce image sensing chip actual height and design height it Between deviation so that the actual height of image sensing chip and design height are almost the same, and therefore, which can Reduce the deviation of the actual height and design height of image sensing chip, realize the stringent control to image sensing chip height, And then improve the image quality of image sensor.

It is the specific implementation of the encapsulating structure of image sensing chip provided by the embodiments of the present application above.Based on the tool Body realization method, the embodiment of the present application also provides the specific implementations of the packaging method of image sensing chip.

Fig. 8 to Fig. 9 F is referred to, the packaging method of image sensing chip provided by the embodiments of the present application includes the following steps：

S801：Substrate 21 is provided, substrate 21 includes opposite first surface 21a and second surface 21b.

As shown in Figure 9 A, substrate 21 includes opposite first surface 21a and second surface 21b.As an example, substrate 21 can Think printed circuit board i.e. pcb board.

The first weld pad 212 is provided on the first surface 21a of the substrate 21；It is provided on the second surface 21b of substrate 21 Second weld pad 213, second weld pad 213 are electrically connected for realizing substrate 21 and external circuit.

Substrate 21 is internally provided with electric connection structure 214, the electric connection structure 214 for realizing the first weld pad 212 with The electrical connection of second weld pad 213.

S802：At least one through-hole 211 through the first surface 21a and second surface 21b is formed on the base plate (21, The through-hole 211 can accommodate at least one image sensing chip 22.

As shown in Figure 9 B, it is formed on the base plate (21 using etching technics or cutting technique at least one through first surface The through-hole 211 of 21a and second surface 21b.As an example, example goes out to be formed 3 on the base plate (21 through first surface in Fig. 9 B The through-hole 211 of 21a and second surface 21b.

It is to be appreciated that through-hole 211 formed will not be inside damaged substrate 21 electric connection structure 214 and the first weld pad 212 and second weld pad 213.

And it is not formed between the through-hole 211 formed and electric connection structure 214, the first weld pad 212 and the second weld pad 213 Electrical connection.

Through-hole 211 is sized to accommodate at least one image sensing chip 22.In this way, the size of through-hole 211 is at least not Less than the size of image sensing chip 22.In addition, through-hole 211 can be identical with the profile of image sensing chip 22, it can not also Together.

S803：It is formed on the first surface 21a of the substrate 21 and is opened towards first surface 21a for sealing through-hole 211 The coating 91 of mouth.

As shown in Figure 9 C, it is formed on the first surface 21a of substrate 21 for sealing through-hole 211 towards first surface 21a The coating 91 of opening.As an example, the coating 91 can be viscose top, or loading plate.

When coating 91 is viscose top, step S803 can be specially：

It is sticked on the first surface 21a of substrate 21 and seals the viscose top that through-hole 211 is open towards first surface 21a.

When coating 91 is loading plate, this step can be specially：Loading plate be may be detachably retained at into base On the first surface 21a of plate 21.

S804：Image sensing chip 22 is placed into through-hole 211, wherein the image sensing chip 22 front with 91 surface of the coating contacts.

Because the coating cap rock of the opening of through-hole 211 towards first surface 21a 91 seals, and the through-hole 211 that an opening is enclosed Groove structure is reformed into.Wherein, bottom of the coating 91 as groove structure.In this way, image sensing chip 22 can be placed In the through-hole 211 (i.e. groove structure) being enclosed to an opening, and because the through-hole 211 formed can accommodate image sensing chip 22, therefore, image sensing chip 22 can be placed on groove structure bottom surface, that is to say, that image sensing chip 22 is just Face is contacted with 91 surface of the coating.The step has executed corresponding cross-sectional view as shown in fig. 9d.

In the embodiment of the present application, the front of image sensing chip 22 is provided with photosensitive area 221 and is located at photosensitive area 221 Third weld pad 222 in addition, photosensitive area 221 are electrically connected with third weld pad 222.

S805：The second surface 21b of substrate 21 is packaged, so that image sensing chip 22 forms entirety with substrate 21 Structure.

In order to make substrate 21 and image sensing chip 22 link together, capsulation material (generally plastic packaging material) may be used The second surface 21b of substrate 21 is packaged, to form plastic package structure in the sides second surface 21b of substrate 21.

When the thickness of image sensing chip 22 is less than the thickness of substrate 21, when image sensing chip 22 is placed into substrate After 21, in through-hole 211, close to the side of second substrate surface 21b, also there are a fixed gaps.In this case, it was encapsulating Cheng Zhong, capsulation material can fill in through-hole 211, through-hole 211 filled up.

The step has executed corresponding cross-sectional view as shown in fig. 9e.

S806：Remove coating 91.

As an example, when coating 91 is viscose top, viscose top can be taken off from 21 first surface 21a of substrate Come.

When coating 91 is loading plate, loading plate can be disassembled from 21 first surface 21a of substrate.

The step has executed corresponding cross-sectional view as shown in fig. 9f.

S807：It is electrically connected 222 and first weld pad 212 of corresponding third weld pad by lead 23.

In order to realize being electrically connected for image sensing chip 22 and substrate 21, the embodiment of the present application passes through the electrical connection of lead 23 the Three weld pads 222 and the first weld pad 212.

It is as shown in Figure 2 A that the step has executed corresponding cross-sectional view.

S808：If when the second surface 21b to substrate 21 is packaged, capsulation material 24 is also wrapped in second surface On 21b, then removal is covered in the capsulation material 24 on the second weld pad 213, and the second weld pad 213 is made to expose.

Plastic package structure to being formed in the sides second surface 21b is polished, until removal is covered on the second weld pad 213 Capsulation material 24, so that the second weld pad 213 is exposed.The second weld pad 213 exposed is convenient for being electrically connected with external circuit realization.

It is to be appreciated that in the embodiment of the present application, the realization method that S808 is executed after S805 is in the guarantor of the application Protect the row of range.As an example, step S808 can again be executed after executing the step S805, can also step S807 it Execute step S808 again afterwards.

In addition, in the industry cycle, realizing that the lead 23 of electrical connection is generally thinner metal wire, being easy to be scratched, be Its scuffing is avoided, as the alternative embodiment of the application, packaging method described above can also include the following steps：

S809：The first surface 21a of substrate 21 is packaged, capsulation material is made to wrap up the lead 23.

Specifically, this step may be used plastic packaging material and is packaged to the first surface 21a of substrate 21, in substrate 21 The sides first surface 21a formed plastic package structure.The plastic package structure wraps up the lead 23.But the plastic package structure does not wrap up 22 positive photosensitive area 221 of image sensing chip.

It is as shown in Figure 3 that the step has executed corresponding cross-sectional view.

It is prevented as the alternative embodiment of the application in order to protect the photosensitive area 221 on 22 front of image sensing chip It is made dirty by dust, after step S807 or S809, can also include：

S810：Transparent protective layer 26 is formed above 21 first surface 21a of substrate.

As the specific example of the application, transparent protective layer 26 can with it is close adjacent on 21 first surface 21a of substrate, The corresponding cross-section structure is as shown in Figure 5.As another specific example of the application, as shown in fig. 6, the transparent protective layer 26 Seal cavity 27 is formed between the image sensing chip 22.

When forming seal cavity 27 between the transparent protective layer 26 of formation and the image sensing chip 22, this step can To be specially：The support construction 28 for being used to support transparent protective layer 26, the support construction are formed on 21 first surface 21a of substrate 28 between transparent protective layer 26 and image sensing chip 22, then, transparent protective layer 26, branch is formed in support construction 28 Support structure 28, transparent protective layer 26 and 22 three of image sensing chip surround to form seal cavity 27.

In the embodiment of the present application, the material of support construction 28 can be photoresists, be formed in using exposure imaging technique On the first surface 21a of substrate 21.

As another alternative embodiment of the application, in order to form the envelope of the image sensing chip with camera lens die set Assembling structure, packaging method described above can also can also include after S807 or S809：

S811：Camera lens die set 29 is formed on the first surface 21a of substrate 21.

The camera lens die set 29 includes lens 291 and lens carrier 292, the lens carrier 292 and the substrate 21 First surface 21b be fixedly connected.As an example, lens carrier 292 can be bonded in the first table of substrate 21 by bonded adhesives On the 21a of face.In order to enable the light by lens 291 can be detected easily by photosensitive area 221, as an example, lens 291 with The photosensitive area 221 of image sensing chip 22 can be opposite up and down.Moreover, as an example, one can be corresponded to a lens 291 Image sensing chip 22, can also a lens 292 correspond to multiple image sensing chips 22.

In the embodiment of the present application, there is certain space, therefore, in lens 291 and base between substrate 21 and lens 291 Other devices can also be formed on first surface between plate 21, the other devices can lens carrier 292 and substrate 21 it Between form high-density laminated structure, to be conducive to the miniaturization of device.In addition, in the first surface of lens 291 and substrate 21 Optical module, such as polariscope, infrared filter etc. can also be formed between 21a, for improve imaging sensor at image quality Amount.

It is as shown in Figure 7 that the step has executed corresponding cross-sectional view.

It is image sensing chip packaging method provided by the embodiments of the present application above.In the packaging method, due to sealing During dress, which seals close to the coating cap rock of opening of substrate first surface, and therefore, the image being placed into through-hole passes Sense chip can coating cap rock carried so that the front of the image sensing chip being placed into through-hole is with substrate First surface is equal, then by being packaged to second substrate surface so that image sensing chip together with substrate package, In this way, image sensing chip is just encapsulated in through-hole, and the front of the image sensing chip is equal with the first surface of substrate.Cause This, which can relatively easily control the height of image sensing chip, be conducive to the reality for reducing image sensing chip Deviation between border height and design height so that the actual height of image sensing chip and design height are almost the same, in this way, The stringent control to the distance between the lens above image sensing chip and its can be realized, to improve image sensor Image quality.

The above is only the preferred embodiment of the application, it is noted that for the ordinary skill people of the art For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered It is considered as the protection domain of the application.

Claims (12)

1. a kind of encapsulating structure of image sensing chip, which is characterized in that including：Substrate and at least one image sensing chip；

The substrate includes opposite first surface and second surface, is formed on the substrate and at least one runs through described first The through-hole on surface and second surface；The first weld pad being electrically connected with image sensing chip front side is provided on the first surface； The second weld pad for being electrically connected with external circuit is additionally provided on the second surface of the substrate；The substrate is internally provided with Electric connection structure for being electrically connected the first weld pad and the second weld pad；

The image sensing chip is located in the through-hole and the positive and substrate first surface phase of the image sensing chip It is flat；Photosensitive area and the third weld pad other than the photosensitive area, the third are provided in the image sensing chip front side Weld pad is electrically connected with the first weld pad by lead realization.

2. encapsulating structure according to claim 1, which is characterized in that the lead is wrapped up by capsulation material.

3. encapsulating structure according to claim 1, which is characterized in that the encapsulating structure further includes：

The camera lens die set being set on the first surface of the substrate.

4. encapsulating structure according to claim 3, which is characterized in that the camera lens die set includes lens and lens branch Frame, the lens carrier are fixedly connected with the first surface of the substrate.

5. according to claim 1-4 any one of them encapsulating structures, which is characterized in that the encapsulating structure further includes：It is formed Transparent protective layer above the substrate first surface.

6. encapsulating structure according to claim 5, which is characterized in that the transparent protective layer is anti reflection glass layer.

7. encapsulating structure according to claim 5, which is characterized in that the transparent protective layer and the image sensing chip Between form seal cavity.

8. according to claim 1-4 any one of them encapsulating structures, which is characterized in that be also filled with plastic packaging material in the through-hole Material.

9. according to claim 1-4 any one of them encapsulating structures, which is characterized in that the encapsulating structure further includes being formed in Pedestal on second weld pad.

10. encapsulating structure according to claim 9, which is characterized in that the pedestal is metal soldered ball.

11. according to claim 1-4 any one of them encapsulating structures, which is characterized in that be provided with one in a through-hole The front of a image sensing chip, each image sensing chip is equal with the first surface of the substrate.

12. according to claim 1-4 any one of them encapsulating structures, which is characterized in that be provided in a through-hole to The front of few two image sensing chips, each image sensing chip is equal with the first surface of the substrate.