CN207303051U - Substrate board treatment - Google Patents

Abstract

The utility model provides a substrate processing device which suppresses the height of the device while stacking processing units. A substrate processing apparatus according to an embodiment includes a plurality of processing units, a processing fluid supply line, and a frame structure. The plurality of processing units are arranged horizontally and process the substrate using a processing fluid. The processing fluid supply line includes a horizontal pipe arranged horizontally below the plurality of processing units, and branch pipes branched from the horizontal pipe and respectively connected to the processing units. The frame structure has a plurality of columns and a plurality of beams, and accommodates a plurality of processing units and treatment fluid supply lines in a storage space formed by the columns and the beams. Moreover, the beam part includes the 1st beam part and the 2nd beam part arrange|positioned parallel to the arrangement direction of a some processing part. In addition, the horizontal piping is arranged between the first beam part and the second beam part, between the upper surface and the lower surface of the first beam part, and is also arranged across a plurality of processing parts.

Description

Substrate processing equipment

technical field

The utility model relates to a substrate processing device.

Background technique

Conventionally, there is known a substrate processing apparatus that includes: a plurality of processing units arranged horizontally in a frame and processing substrates individually using a processing liquid; and a supply unit that supplies processing units to the processing units. liquid.

In this substrate processing apparatus, a main pipe for supplying a processing liquid passes horizontally along a direction in which the processing units are arranged on a frame housing the processing units (see, for example, Patent Document 1).

Furthermore, in the device disclosed in Patent Document 1, in order to suppress an increase in the occupied space of the device while achieving higher productivity, a layout in which processing units are stacked in multiple layers is employed.

prior art literature

patent documents

Patent Document 1: Japanese Unexamined Patent Publication No. 2012-142404

Utility model content

Problems to be solved by the utility model

However, there is room for further improvement in the above-mentioned prior art in terms of laminating the processing units and suppressing the height of the device at the same time.

Specifically, stacking processing units as described above is effective in achieving space saving and improving productivity, but when the number of stacks increases, the height of the apparatus increases. In addition, the height of the device may be restricted due to the convenience of the installation place of the device and the conveyance member of the device. Therefore, there is a demand to suppress the height of the device as much as possible while stacking the processing units.

An object of one aspect of the embodiment is to provide a substrate processing apparatus capable of suppressing the height of the apparatus while stacking processing units.

solutions to problems

A substrate processing apparatus according to a first aspect of the present invention includes a plurality of processing units, a processing fluid supply line, and a frame structure. The plurality of processing units are arranged horizontally and process the substrate using a processing fluid. The treatment fluid supply line includes: a horizontal pipe arranged horizontally below the plurality of treatment units; and a branch pipe branched from the horizontal pipe and connected to the treatment units respectively. The frame structure has a plurality of columns and a plurality of beams, and accommodates a plurality of processing units and treatment fluid supply lines in a storage space formed by the columns and the beams. Moreover, the beam part includes the 1st beam part and the 2nd beam part arrange|positioned parallel to the arrangement direction of a some processing part. In addition, the horizontal piping is arranged between the first beam part and the second beam part, between the upper surface and the lower surface of the first beam part, and is also arranged across a plurality of processing parts.

The second aspect of the present utility model provides the substrate processing device according to the aforementioned first aspect, wherein the plurality of processing units arranged along the horizontal direction are arranged in at least two layers up and down, and the processing fluid supply pipeline includes The vertical pipes connected to the horizontal pipes of the plurality of processing units on the upper layer side and the plurality of processing units on the lower layer side, the column part includes: a group of first column parts vertically provided on the One end side of the first beam portion and one end side of the second beam portion; a group of second column portions vertically provided on the other end side of the first beam portion and the other end side of the second beam portion On the other hand, the vertical pipes are arranged between the opposing surfaces of the group of the first column parts or between the opposing surfaces of the group of the second column parts.

A third aspect of the present invention provides the substrate processing apparatus according to the first aspect or the second aspect, the substrate processing apparatus further includes means for connecting the respective lower surfaces of the first beam portion and the second beam portion. sheet.

A fourth aspect of the present utility model provides the substrate processing device according to any one of the aforementioned first to third aspects, wherein the beam portion is a square material.

A fifth aspect of the present invention provides the substrate processing apparatus according to any one of the aforementioned first to fourth aspects, further comprising a housing for accommodating the horizontal piping.

A sixth aspect of the present invention provides the substrate processing device according to the fifth aspect, further comprising a flow control unit, which is provided in the branch pipe and controls the flow of the processing fluid. control, the flow control unit is accommodated in the housing.

The effect of utility model

According to one aspect of the embodiment, the height of the device can be suppressed while stacking the processing units.

Description of drawings

FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment.

FIG. 2 is a diagram showing a schematic configuration of a processing unit.

3 is a diagram showing a schematic configuration of a processing liquid supply system included in the substrate processing system.

FIG. 4 is a diagram showing an exhaust path of a processing unit.

Fig. 5A is a diagram (No. 1) showing a schematic configuration of a frame structure.

Fig. 5B is a diagram (part 2) showing a schematic configuration of the frame structure.

Fig. 5C is a diagram (part 3) showing a schematic configuration of the frame structure.

FIG. 5D is a diagram (No. 4 ) showing a schematic configuration of the frame structure.

Figure 6A is a schematic front view of a processing station.

Figure 6B is a schematic top view of a processing station.

Fig. 6C is a schematic front view of the processing unit.

Fig. 6D is a schematic top view of a processing unit.

Figure 7A is a schematic front view of a treatment station showing supply lines for treatment fluid.

Fig. 7B is a schematic cross-sectional view taken along the line A-A' shown in Fig. 7A.

FIG. 7C is an enlarged view of the M2 portion shown in FIG. 7B .

Fig. 7D is a schematic perspective view showing a connection portion between the second exhaust pipe and the housing.

Fig. 7E is a schematic sectional view taken along line B-B' shown in Fig. 7B.

Fig. 7F is an enlarged view of the M3 portion shown in Fig. 7E.

7G is a schematic front view of the processing station showing an exhaust path for exhausting the atmospheric gas around the supply line for the processing fluid.

Fig. 8 is a diagram showing the configuration of an exhaust switching unit.

FIG. 9 is a flowchart showing an example of a processing procedure for substrate processing executed in the substrate processing system.

Explanation of reference signs

1. Substrate processing system; 16. Processing unit; 104. Circulation pipeline; 104H. Horizontal piping; 112. Branch pipeline; 400. Frame structure; 401. Column part; 402. Beam part; 402-1. First beam part ; 402-2, the second beam.

Detailed ways

Hereinafter, embodiments of the substrate processing apparatus disclosed in the present application will be described in detail with reference to the drawings. In addition, this invention is not limited to embodiment shown below.

FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. Hereinafter, in order to clarify the positional relationship, the mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the positive direction of the Z-axis is defined as a vertically upward direction.

As shown in FIG. 1 , a substrate processing system 1 includes an input and output station 2 and a processing station 3 . The input and output station 2 and the processing station 3 are arranged adjacently.

The input/output station 2 includes a carrier placement unit 11 and a transport unit 12 . A plurality of carriers C for storing a plurality of substrates, in this embodiment, semiconductor wafers (hereinafter referred to as wafers W) in a horizontal state are placed on the carrier placement portion 11 .

The transfer unit 2 is provided adjacent to the carrier placement unit 11 , and has a substrate transfer device 13 and a transfer unit 14 inside the transfer unit 12 . The substrate transfer device 13 has a wafer holding mechanism for holding the wafer W. As shown in FIG. In addition, the substrate transport device 13 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transports the wafer W between the carrier C and the transfer unit 14 using the wafer holding mechanism.

The processing station 3 is arranged adjacent to the transport section 12 . The processing station 3 comprises a transport section 15 and a plurality of processing units 16 . A plurality of processing units 16 are arranged on both sides of the transport unit 15 .

The transport unit 15 has a substrate transport device 17 inside. The substrate transfer device 17 has a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transfers the wafer W between the transfer unit 14 and the processing unit 16 using a wafer holding mechanism.

The processing unit 16 is used to perform preset substrate processing on the wafer W conveyed by the substrate conveying device 17 .

In addition, the substrate processing system 1 includes a control device 4 . The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19 . Programs for controlling various processes executed in the substrate processing system 1 are stored in the storage unit 19 . The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19 .

In addition, the program may be stored in a computer-readable storage medium, or may be installed from the storage medium into the storage unit 19 of the control device 4 . As the computer-readable storage medium, there are, for example, a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the input/output station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11, and takes out the taken-out wafer W. The circle W is placed on the delivery portion 14 . The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16 .

After the wafer W carried into the processing unit 16 is processed by the processing unit 16 , the wafer W is carried out from the processing unit 16 by the substrate transfer device 17 and placed on the transfer unit 14 . Then, the processed wafer W placed on the transfer unit 14 is returned to the carrier C of the placement unit 11 by the substrate transfer device 13 .

Next, the configuration of the processing unit 16 will be described with reference to FIG. 2 . FIG. 2 is a diagram showing a schematic configuration of the processing unit 16 .

As shown in FIG. 2 , the processing unit 16 includes a chamber 20 , a substrate holding mechanism 30 , a processing fluid supply part 40 , and a recovery cup 50 .

The chamber 20 accommodates the substrate holding mechanism 30 , the processing fluid supply unit 40 and the recovery cup 50 . An FFU (Fan Filter Unit: fan filter unit) 21 is provided on the top of the chamber 20 . The FFU 21 is used to form a downflow in the chamber 20 .

The substrate holding mechanism 30 includes a holding portion 31 , a pillar portion 32 , and a driving portion 33 . The holding unit 31 holds the wafer W horizontally. The pillar portion 32 is a member extending in the vertical direction, and its base end portion is rotatably supported by the driving portion 33 , and the pillar portion 32 horizontally supports the holding portion 31 at the distal end portion. The driving unit 33 is used to rotate the support unit 32 around the vertical axis. The substrate holding mechanism 30 rotates the support unit 31 supported by the support unit 32 by using the drive unit 33 to rotate the support unit 32 , thereby rotating the wafer W held by the support unit 31 .

The processing fluid supply unit 40 supplies a processing fluid to the wafer W. As shown in FIG. The treatment fluid supply unit 40 is connected to a treatment fluid supply source 70 .

The recovery cup 50 is disposed so as to surround the rotation holder 31 and collects the processing liquid scattered from the wafer W by the rotation of the holder 31 . A liquid discharge port 51 is formed at the bottom of the recovery cup 50 , and the processing liquid collected in the recovery cup 50 is discharged to the outside of the processing unit 16 through the liquid discharge port 51 . In addition, an exhaust port 52 for exhausting gas supplied from the FFU 21 to the outside of the processing unit 16 is formed at the bottom of the recovery cup 50 .

Next, a schematic configuration of a processing liquid supply system included in the substrate processing system 1 will be described with reference to FIG. 3 . FIG. 3 is a diagram showing a schematic configuration of a processing liquid supply system included in the substrate processing system 1 .

As shown in FIG. 3 , the processing liquid supply system included in the substrate processing system 1 has a processing fluid supply source 70 that supplies processing liquid to a plurality of processing units 16. As shown in FIG.

The treatment fluid supply source 70 has a tank 102 storing the treatment liquid and a circulation line 104 coming out of the tank 102 and returning to the tank 102 . A pump 106 is provided in the circulation line 104 . Pump 106 creates a recycle flow out of tank 102 and back to tank 102 via recycle line 104 . A filter 108 for removing pollutants such as fine particles contained in the treatment liquid is provided in a portion of the circulation line 104 on the downstream side of the pump 106 . Auxiliary equipment (such as heaters, etc.) may be further provided in the circulation line 104 as needed.

One or more branch lines 112 are connected to a connection area 110 set in the circulation line 104 . Each branch line 112 supplies the treatment liquid flowing through the circulation line 104 to the corresponding treatment unit 16 . Flow adjustment mechanisms such as flow control valves, filters, and the like can be installed in each branch line 112 as necessary.

The substrate processing system 1 has a tank liquid replenishment unit 116 for replenishing the tank 102 with processing liquid or components of the processing liquid. The tank 102 is provided with a waste liquid unit 118 for discarding the treatment liquid in the tank 102 .

Next, the exhaust path of the processing unit 16 will be described with reference to FIG. 4 . FIG. 4 is a diagram showing an exhaust path of the processing unit 16 . In addition, in FIG. 4 , the constituent elements necessary for explaining the exhaust path of the processing unit 16 are mainly shown, and the description of general constituent elements is appropriately omitted.

First, the configuration of the processing unit 16 of this embodiment will be described. As shown in FIG. 4 , the processing fluid supply unit 40 included in the processing unit 16 includes a nozzle 41 and a pipe 42 having one end connected to the nozzle 41 . The other end of the pipe 42 is branched into a plurality, and the branched ends are respectively connected with an alkaline treatment liquid supply source 71 , an acidic treatment liquid supply source 72 , an organic treatment liquid supply source 73 , and a DIW supply source 74 . In addition, valves 75 to 78 are provided between the respective supply sources 71 to 74 and the nozzle 41 .

The processing fluid supply unit 40 supplies the alkaline processing liquid, the acidic processing liquid, the organic processing liquid, and DIW (pure water) supplied from the supply sources 71 to 74 from the nozzle 41 to the surface of the wafer W (surface to be processed). supply.

In this embodiment, SC1 (a mixture of ammonia, hydrogen peroxide, and water) is used as the alkaline treatment solution, HF (hydrofluoric acid) is used as the acid treatment solution, and IPA (isopropanol) is used as the organic treatment solution. liquid. In addition, the acid-based treatment liquid, alkali-based treatment liquid, and organic-based treatment liquid are not limited to these.

In addition, in this embodiment, the alkali-based treatment liquid, the acid-based treatment liquid, the organic-based treatment liquid, and DIW are supplied from one nozzle 41, but the treatment fluid supply unit 40 may include a plurality of nozzles corresponding to each treatment liquid. .

Here, it is preferable to use alkali-based exhaust gas discharged from the processing unit 16 when using SC1, acid-based exhaust gas discharged from the processing unit 16 when using HF, The organic exhaust gas discharged from the processing unit 16 when IPA is used is discharged separately. Therefore, in the substrate processing system 1 of the present embodiment, exhaust paths are respectively provided for alkali-based exhaust, acid-based exhaust, and organic-based exhaust.

The configuration of this exhaust path will be described. The processing station 3 of the substrate processing system 1 includes a main exhaust pipe 120 , a first exhaust pipe 200 , and an exhaust switching unit 300 as exhaust paths for the processing units 16 .

The main exhaust pipe 120 includes a plurality of individual exhaust pipes 121 to 123 . The independent exhaust pipe 121 is an exhaust pipe for the flow of the alkaline exhaust gas, the independent exhaust pipe 122 is the exhaust pipe for the flow of the acid exhaust gas, and the independent exhaust pipe 123 is the exhaust pipe for the flow of the organic exhaust gas. . Exhaust mechanisms 151 to 153 are respectively provided in these individual exhaust pipes 121 to 123 . As the exhaust mechanisms 151 to 153, suction devices such as pumps can be used.

At least a part of the individual exhaust pipes 121 to 123 of the present embodiment is disposed above the processing unit 16 . The specific arrangement of the individual exhaust pipes 121 to 123 will be described later.

The first exhaust pipe 200 is a pipe that guides the exhaust gas from the processing unit 16 to the main exhaust pipe 120 . One end of the first exhaust pipe 200 is connected to the exhaust port 52 of the processing unit 16 , and the other end is connected to a portion of the main exhaust pipe 120 disposed above the processing unit 16 via an exhaust switching unit 300 described later. .

The first exhaust pipe 200 includes a horizontal portion 201 extending horizontally from the exhaust port 52 of the processing unit 16 , and a rising portion 202 provided on the downstream side of the horizontal portion 201 and extending vertically upward. In addition, a waste liquid unit 250 for discharging the liquid in the first exhaust pipe 200 to the outside is provided at the lowermost position of the ascending portion 202 .

The exhaust switching unit 300 is connected to the ascending portion 202 of the first exhaust pipe 200 , and switches the outflow destination of the exhaust gas from the processing unit 16 to any one of the individual exhaust pipes 121 to 123 . Like the main exhaust pipe 120 , the exhaust switching unit 300 is also arranged above the processing unit 16 .

The exhaust path of the processing unit 16 is configured as described above, and the exhaust from the processing unit 16 flows out to any one of the individual exhaust pipes 121 to 123 via the first exhaust pipe 200 and the exhaust switching unit 300 .

Here, in the substrate processing system 1 of this embodiment, as described above, at least a part of the main exhaust pipe 120 and the exhaust switching unit 300 are arranged above the processing unit 16, and the first exhaust pipe 200 The other end side is connected to a portion of the main exhaust pipe 120 disposed above the processing unit 16 via the exhaust switching unit 300 . As a result, the exhaust gas from the processing unit 16 rises in the ascending portion 202 of the first exhaust pipe 200 , and then flows out from the exhaust switching unit 300 to the main exhaust pipe 120 .

In addition, although not shown here, in this embodiment, an exhaust path for exhausting atmospheric gas around supply lines for processing fluid such as supply sources 71 to 74 and valves 75 to 78 is provided. This exhaust path is formed using the second exhaust pipe 500 and the third exhaust pipe 600 (refer to FIG. Air switching unit 300. Thereby, it is possible to perform exhaust to cope with the leakage of the processing fluid around the supply line of the processing fluid.

Hereinafter, a more specific structure of the processing station 3 including the arrangement of the main exhaust pipe 120, the first exhaust pipe 200, and the exhaust switching unit 300 described above will be sequentially described with reference to FIG. 5A and subsequent drawings.

First, the processing station 3 includes a frame structure 400 having a plurality of columns 401 and a plurality of beams 402 , and a plurality of processing units 16 are accommodated in a storage space formed by the columns 401 and the beams 402 . The plurality of processing units 16 are arranged in parallel along the direction in which the transport unit 15 (see FIG. 1 ) extends, that is, the X-axis direction, and are stacked in multiple layers.

Here, a schematic configuration of the frame structure 400 according to the present embodiment will be described in advance with reference to FIGS. 5A to 5D . 5A to 5D are diagrams (No. 1) to (No. 4) showing a schematic configuration of the frame structure 400 .

In addition, FIG. 5A is a schematic perspective view of the frame structure 400, FIG. 5B is a cross-sectional view when a set of opposing first beams 402-1 and second beams 402-2 are cut in the YZ plane, and FIG. 5C is 5D is an enlarged view of the M1 portion shown in FIG. 5C .

As shown in FIG. 5A , the column portion 401 of the frame structure 400 includes at least a first column portion 401-1 disposed vertically on the negative side of the X-axis and an end vertically disposed on the positive side of the X-axis. The second column part 401-2 of the part.

In addition, the beams 402 of the frame structure 400 are horizontally and multi-layered along the arrangement direction of the processing units 16, that is, the X-axis direction, and include: a first beam 402-1 disposed on the negative side of the Y-axis of the processing units 16; direction side; and the second beam portion 402 - 2 , which is disposed on the positive side of the Y-axis of the processing unit 16 in parallel with the first beam portion 402 - 1 .

In addition, it is preferable to use a square material such as a square pipe or a profile for the column portion 401 or the beam portion 402 . By using a square material, it is possible to easily form an accommodating area for members (for example, pipes, etc.) between the facing surfaces.

And, as shown in FIG. 5A, the frame structure 400 is basically a structure composed of a first column part 401-1, a second column part 401-2, and a plurality of first beam parts 402-1, and a structure composed of a first column part 401-1. A storage space is formed by combining a structure composed of the pillar portion 401-1, the second pillar portion 401-2, and the plurality of second beam portions 402-2.

However, in this embodiment, as shown by the two-dot chain line in FIG. 5A , the frame structure 400 has a structure in which beams erected along the width direction are provided as little as possible. In this embodiment, as shown in FIG. 5B , the respective lower surfaces of a set of opposing first beam portions 402 - 1 and second beam portions 402 - 2 are connected by a plate material 403 .

Thus, as shown in FIG. 5B , it is located between the opposing surfaces of the first beam portion 402-1 and the second beam portion 402-2 and has the height of the first beam portion 402-1 and the second beam portion 402-2. The accommodating region R1 of h can be formed along the entire alignment direction as shown in FIG. 5C .

In addition, since the first beam portion 402-1 and the second beam portion 402-2 are connected by the plate 403 as described above, as shown in FIG. The accommodating region R2 having the width w of the second column portion 401-2 can be formed along the extending direction of the second column portion 401-2.

In this embodiment, by making full use of these storage areas R1 and R2 and storing various components of the processing station 3 including the processing unit 16 in the storage space of the frame structure 400, space saving of the entire apparatus is achieved. . Hereinafter, specific examples thereof will be described in order.

FIG. 6A is a schematic front view of the processing station 3 . In addition, FIG. 6B is a schematic plan view of the processing station 3 . In addition, the so-called front view here is a view when the processing station 3 is viewed from the maintenance area side along the Y-axis positive direction, and the top view is a view when the processing station 3 is viewed along the Z-axis negative direction. In addition, the maintenance area side is the side facing the row of processing units 16 from the outside of the processing station 3 .

As shown in FIG. 6A , in this embodiment, the processing units 16 are stacked in two layers, for example, up and down. Hereinafter, among the processing units 16 stacked up and down in two layers, the processing unit 16 arranged on the upper layer may be described as "processing unit 16U", and the processing unit 16 arranged on the lower layer may be described as "processing unit 16L".

In addition, in this embodiment, an example is shown in which the processing units 16 are stacked in two layers up and down, but the number of stacked processing units 16 is not limited to two layers. In addition, in the present embodiment, an example was shown in which five processing units 16 are arranged in parallel, but the number of processing units 16 arranged in parallel is not limited to five.

As shown in FIG. 6B , the individual exhaust pipes 121 to 123 included in the main exhaust pipe 120 are arranged on the upper portion of the frame structure 400 . In addition, as shown in FIG. 6A , a plurality of exhaust switching units 300 corresponding to the processing units 16 are arranged on the upper portions of the individual exhaust pipes 121 to 123 . In addition, the main exhaust pipe 120 and the exhaust switching unit 300 are housed in the casing 301 and separated from the frame structure 400 . In addition, the casing 301 communicates with the external space in such a manner that external air can be introduced.

In addition, as shown in FIG. 6A , the main exhaust pipe 120 is arranged above the processing unit 16U arranged on the uppermost layer, and the first exhaust pipe 120 corresponds to the processing unit 16U on the upper layer side and the processing unit 16L on the lower layer side, respectively. Exhaust pipes 200U, 200L are connected via exhaust switching units 300U, 300L.

Thus, in this embodiment, the processing unit 16U on the upper side and the processing unit 16L on the lower side share the main exhaust pipe 120 . Therefore, the manufacturing cost of the substrate processing system 1 can be kept low compared to the case where the main exhaust pipes 120 are respectively provided in the upper processing unit 16U and the lower processing unit 16L. In addition, an increase in the height of the processing station 3 can be suppressed, and space saving can be achieved.

In addition, as shown in FIG. 6B , the substrate processing system 1 includes: a main exhaust pipe 120 corresponding to the processing unit 16 arranged on the negative side of the Y axis than the conveying unit 15; The processing unit 16 on the positive side of the axis corresponds to the main exhaust pipe 120 . Each main exhaust pipe 120 is disposed above the region where the corresponding processing unit 16 is disposed.

Here, among the plurality of first exhaust pipes 200, the first exhaust pipe 200U connected to the upper processing unit 16U and the first exhaust pipe 200L connected to the lower processing unit 16L are arranged in a row in the processing unit 16U, Dorsal side of part of 16L.

For example, as shown in FIGS. 6A and 6B , with respect to the first exhaust pipes 200U and 200L, the first exhaust pipes 200L are arranged sequentially from the side closer to the transport unit 15 on the back side of a part of the processing units 16U and 16L. , The first exhaust pipe 200U. In addition, a part of what is called processing unit 16U, 16L here corresponds to the lead-in part 21a of the FFU21 mentioned later (refer FIG. 6D shown later).

In addition, among the plurality of exhaust switching units 300 , the exhaust switching unit 300U corresponding to the upper processing unit 16U and the exhaust switching unit 300L corresponding to the lower processing unit 16L alternate along the direction in which the processing units 16 are arranged. configuration.

Also, the exhaust switching unit 300U and the exhaust switching unit 300L have the same configuration and are arranged to face each other. Specifically, as shown in FIG. 6A , when viewing the processing station 3 along the Y-axis positive direction, the exhaust switch unit 300U corresponding to the upper processing unit 16U and the exhaust switching unit 300U corresponding to the lower processing unit 16L The switching unit 300L is arranged in line symmetry with the first exhaust pipes 200U, 200L connected to these processing units 16U, 16L as the center line x.

Thus, in the present embodiment, the first exhaust pipe 200U connected to the upper processing unit 16U and the first exhaust pipe 200L connected to the lower processing unit 16L are arranged side by side on a part of the back side of the processing units 16U, 16L. . In addition, the exhaust switching unit 300U corresponding to the upper processing unit 16U and the exhaust switching unit 300L corresponding to the lower processing unit 16L are arranged facing each other so that the first exhaust pipes 200U, 200L are taken as the center line x. Line symmetry.

By setting it as such an arrangement, it becomes easy to make common use of 1st exhaust pipe 200U, 200L, and exhaust switching means 300U, 300L in an upper stage and a lower stage. In addition, the exhaust switching unit 300U and the exhaust switching unit 300L may not necessarily be arranged opposite to each other.

In addition, as shown in FIGS. 6A and 6B , the processing station 3 includes a second exhaust pipe 500 . The second exhaust pipe 500 constitutes a vertical path in the exhaust path for exhausting the atmospheric gas around the supply line for the processing fluid as described above.

As shown in FIG. 6A and FIG. 6B , the second exhaust pipe 500 is arranged between the facing surfaces of the group of the first column parts 401-1 corresponding to the above-mentioned storage area R2 (see FIG. 5D ), or, Between the facing surfaces of the group of the second column parts 401-2. Thereby, the exhaust path which makes full use of the storage area R2 can be formed, and it can contribute to space saving of the whole apparatus.

In addition, the third exhaust pipe 600 not shown here constitutes a horizontal path among exhaust paths for exhausting the atmospheric gas around the supply line of the processing fluid. The third exhaust duct 600 is arranged between the opposing surfaces of the first beam portion 402-1 and the second beam portion 402-2 corresponding to the above-described storage capacity area R1 (see FIG. 5B ). Thereby, the exhaust path which makes full use of the storage area R1 can be formed, and it can contribute to space-saving of the whole apparatus. In the description referring to FIG. 7A and subsequent drawings, details of the second exhaust pipe 500 and the third exhaust pipe 600 will be described later.

Furthermore, as shown in FIG. 6A , the exhaust port 501 a of the exhaust path formed by the second exhaust pipe 500 and the third exhaust pipe 600 is connected to the case 301 that accommodates the exhaust switching unit 300 .

Next, a more specific configuration of the processing unit 16 will be described with reference to FIGS. 6C and 6D . FIG. 6C is a schematic front view of the processing unit 16 . In addition, FIG. 6D is a schematic top view of the processing unit 16 .

As shown in FIG. 6C , the processing unit 16 includes a chamber 20 and an FFU 21 . The FFU 21 includes an introduction portion 21a and an air supply portion 21b. The introduction part 21 a is a means for introducing outside air, and is arranged on the side of the chamber 20 , and is arranged on the same side of the chamber 20 between the processing units 16 arranged in layers. And, as shown in FIG. 6D , the introduction part 21 a takes in outside air from the maintenance area side, and cleans the outside air with a filter or the like into clean air, and sends it to the air supply part 21 b. Moreover, as shown in FIG. 6D, the introduction part 21a is arrange|positioned so that the conveyance part 15 side may form a free space with respect to the air supply part 21b.

As shown in FIGS. 6C and 6D , the air supply unit 21b is arranged above the chamber 20 and opens on the side of the chamber 20 , and is connected to the introduction portion 21a on the side to communicate with the introduction portion 21a. And the air supply part 21b forms a downflow in the chamber 20 by the clean air sent in from the introduction part 21a.

In this way, when the processing units 16 are stacked, the increase in height can be suppressed by providing the individual external air introduction portions 21 a on one side of the chamber 20 . That is, further space-saving can be achieved.

Moreover, by providing the introduction part 21a of outside air in each of the several processing units 16 in this way, the downflow can be adjusted for each processing unit 16. FIG. That is, it can contribute to keeping the processing quality of the wafers W of the plurality of processing units 16 uniform.

In addition, as shown in FIGS. 6C and 6D , the above-mentioned first exhaust pipes 200U and 200L are arranged in the above-mentioned empty space on the back of the introduction portion 21 a and on the side of the chamber 20 . That is, with respect to the conveyance unit 15 provided on the side of the processing unit 16 and at a position different from the side where the introduction portion 21a is disposed, the first exhaust pipe 200L, the second exhaust pipe 200L, and the 1 Exhaust pipe 200U, introduction part 21a. In this way, the first exhaust pipes 200U and 200L are arranged on the same side surface as the introduction portion 21 a with respect to the chamber 20 , and extend vertically on the side surface of the chamber 20 . Thereby, while providing the introduction part 21a independently in the processing unit 16, it can prevent that the occupation space of the processing unit 16 increases by the 1st exhaust pipe 200U, 200L. That is, it is possible to contribute to space saving of the entire device.

In addition, as shown in FIG. 6C , an electrical component box 22 is arranged at the lower portion of the chamber 20 . The electrical component box 22 is a container for storing electrical components, and accommodates, for example, the driving unit 33 (see FIG. 2 ). The gas tank 23 is arranged at the lower part of the introduction part 21a. The gas tank 23 is a container for accommodating components constituting a supply line of low dew point gas described later.

In addition, a valve chamber 24 is disposed under the electrical component box 22 and the gas box 23 . The valve chamber 24 is a container for accommodating components constituting a supply line of the processing fluid, and accommodating a flow control unit including, for example, valves 75 to 78 (see FIG. 4 ), a filter, a flow meter, and the like. In addition, a third exhaust pipe 600 is connected to the lower portion of the valve chamber 24 so as to communicate with the above-mentioned third exhaust pipe 600 .

Next, the structure of the exhaust path for exhausting the atmospheric gas around the supply line of the processing fluid including the third exhaust pipe 600 and the above-mentioned second exhaust pipe 500 will be described with reference to FIGS. 7A to 7G . illustrate.

Figure 7A is a schematic front view of the treatment station 3 showing the supply lines for the treatment fluid. Fig. 7B is a schematic cross-sectional view taken along the line A-A' shown in Fig. 7A. FIG. 7C is an enlarged view of the M2 portion shown in FIG. 7B . FIG. 7D is a schematic perspective view showing a connection portion between the second exhaust pipe 500 and the casing 301 .

Fig. 7E is a schematic sectional view taken along line B-B' shown in Fig. 7B. Fig. 7F is an enlarged view of the M3 portion shown in Fig. 7E. FIG. 7G is a schematic front view of the processing station 3 showing an exhaust path for exhausting the atmospheric gas around the supply line for the processing fluid.

First, as shown in FIG. 7A , a treatment fluid supply source 70 is disposed in the remaining space 410 of the frame structure 400 .

As shown by the thick arrow in FIG. 7A , the supply line of the treatment fluid is formed to vertically pass through the back of the first column part 401-1 from, for example, the treatment fluid supply source 70, branch in the middle, and horizontally pass through the treatment unit. 16U, 16L passes through the back of the first beam part 402-1 below each. Then, it is formed to return to the treatment fluid supply source 70 by passing vertically behind the second column portion 401-2 and passing through the back of the first beam portion 402-1 that merges and horizontally passes through the lowermost layer.

In addition, the "back" referred to here corresponds to the above-mentioned "between opposing surfaces". In addition, the supply line formed in this way corresponds to the above-mentioned circulation line 104 (refer FIG. 3).

First, the circulation line 104 passing vertically behind the first column portion 401-1 or the second column portion 401-2 is connected to the second exhaust pipe shown in FIG. 7B arranged in the storage area R2 described above. 500 way through the formation. The second exhaust pipe 500 is disposed so as to pass through the side opposite to the side where the introduction portion 21 a is disposed with respect to the chamber 20 , or the side of the introduction portion 21 a.

Specifically, as shown in FIG. 7C, the second exhaust pipe 500 is arranged between the opposing surfaces of the first column portion 401-1 group, or between the opposing surfaces of the second column portion 401-2 group, And it is arrange|positioned so that the vertical piping 104V which forms the circulation line 104 may pass therethrough. Therefore, the second exhaust pipe 500 corresponds to a case that accommodates the vertical pipe 104V.

The vertical piping 104V is a plurality of vertical piping groups arranged in parallel in the second exhaust pipe 500, and supplies the alkali-based treatment liquid, the acid-based treatment liquid, and the organic-based treatment liquid supplied from the supply sources 71 to 74 individually. And DIW (pure water) circulation.

And, as shown in FIG. 7D , the upper end of the second exhaust pipe 500 is connected to the lower surface portion 301a of the casing 301 of the exhaust switching unit 300 by a connecting pipe 501 so that an exhaust port 501a is opened.

Also, the circulation line 104 passing horizontally behind the first beam portion 402-1 is arranged so as to pass through the above-mentioned storage-capable region R1 below each of the processing units 16U and 16L shown in FIG. 7E .

Specifically, as shown in FIG. 7F , the third exhaust pipe 600 is disposed between the opposing surfaces of the first beam portion 402-1 and the second beam portion 402-2, and is connected with the horizontal pipe 104H forming the circulation line 104. Which passes through the way configuration. Therefore, the third exhaust pipe 600 corresponds to a housing that accommodates the horizontal pipe 104H.

The horizontal pipes 104H are a plurality of horizontal pipe groups arranged in parallel in the third exhaust pipe 600 , and each individually passes the processing fluids supplied from the respective supply sources 71 to 74 similarly to the vertical pipes 104V.

In addition, the third exhaust pipe 600 is connected so as to communicate with the valve chamber 24 in the above-mentioned connection region 110 (see FIG. 3 ), and is provided so that the branch line 112 branches toward the valve chamber 24 . As necessary, the branch line 112 is provided with a flow control unit, a filter, a flow meter, and the like as described above, and is accommodated in the valve chamber 24 . In addition, the third exhaust pipe 600 is connected to the second exhaust pipe 500 at both ends thereof.

In addition, as shown in FIG. 7F , in this embodiment, a horizontal pipe 104H spanning a plurality of processing units 16 is arranged between the opposing surfaces of the first beam portion 402 - 1 and the second beam portion 402 - 2 having a height h. Therefore, it is possible to suppress an increase in the height of the entire device due to stacking of the processing units 16 . Therefore, it is possible to contribute to space saving of the entire device.

The second exhaust pipe 500 and the third exhaust pipe 600 constituted in this way form an exhaust path for exhausting the atmospheric gas around the supply line of the processing fluid. Specifically, as shown in FIG. 7G , the second exhaust pipe 500 accommodating the vertical pipe 104V, the third exhaust pipe 600 accommodating the horizontal pipe 104H, and the valve chamber communicating with the third exhaust pipe 600 via the branch line 112 24 are connected to form, so to speak, a housing in which the atmosphere around the supply line for the treatment fluid is shared (see the blackened portion in FIG. 7G ).

Therefore, the exhaust switching unit 300 introduces the atmospheric gas through the exhaust port 501 a connected to the casing 301 of the exhaust switching unit 300 , and can exhaust the ambient gas around the supply line of the processing fluid.

Next, the configuration of the exhaust switching unit 300 will be described with reference to FIG. 8 . FIG. 8 is a diagram showing the configuration of the exhaust switching unit 300 .

As shown in FIG. 8 , the exhaust switching unit 300 includes an exhaust introduction unit 310 , a plurality of switching mechanisms 320_1 to 320_3 , an outside air introduction unit 330 , and a plurality of outflow units 340 . In addition, the exhaust switching unit 300 includes an outside air introduction pipe 350 , a differential pressure port (Japanese: differential pressure port) 360 , and an exhaust flow rate regulator 370 . The switching mechanisms 320_1 to 320_3 include a main body 321 . The main body 321 has a cylindrical inner space with both ends closed, and an exhaust introduction port 322 communicating with the exhaust introduction part 310 and an outside air introduction port 323 communicating with the outside air introduction part 330 are formed on its inner peripheral surface. And the outflow port 324 communicated with the outflow part 340 .

A spool 325 slidable along the inner peripheral surface of the main body 321 is provided in the inner space of the main body 321 . The spool 325 is driven by a driving unit (not shown) provided outside the switching mechanisms 320_1 to 320_3 . The driving unit is controlled by the control unit 18 .

Of the exhaust air inlet 322 , the outside air inlet 323 , and the outflow port 324 formed on the inner peripheral surface of the main body 321 , any one of the exhaust air inlet 322 and the outside air inlet 323 is blocked by the valve body 325 . status. In other words, only one of the exhaust gas inlet 322 and the outside air inlet 323 is in communication with the outlet 324 . The switching mechanisms 320_1 to 320_3 slide the valve body 325 along the inner peripheral surface of the main body 321 to switch the opening communicating with the outlet 324 from the exhaust inlet 322 to the outside air inlet 323, or from the outside air inlet 323 to the outside air inlet 323. 323 is switched to the exhaust introduction port 322 . That is, the state in which the exhaust air introduction part 310 communicates with the outflow part 340 and the state in which the outside air introduction part 330 communicates with the outflow part 340 are switched.

The outside air introduction part 330 is connected to the switching mechanisms 320_1 to 320_3, and takes in the outside air inside and supplies it to the switching mechanisms 320_1 to 320_3.

Next, the operation in the case of switching the outflow destination of the exhaust gas from the processing unit 16 among the individual exhaust pipes 121 to 123 will be described.

For example, FIG. 8 shows an example of the case where the alkaline exhaust gas flows into the individual exhaust pipe 121 . In this case, the exhaust switching unit 300 is such that the exhaust introduction port 322 of the switching mechanism 320_1 communicates with the exhaust introduction part 310, and the outside air introduction ports 323 of the remaining switching mechanisms 320_2 and 320_3 communicate with the outside air introduction part 330. state.

In this manner, while the switching mechanism 320_1 communicates with the exhaust air introduction unit 310 , the remaining switching mechanisms 320_2 and 320_3 communicate with the outside air introduction unit 330 . As a result, alkali-based exhaust gas flows into the individual exhaust pipe 121 , and external air flows into the remaining individual exhaust pipes 122 and 123 . In addition, at this time, the external air also contains the atmospheric gas around the supply line of the processing fluid introduced through the exhaust port 501a.

Next, a case where the outflow destination of the exhaust gas is switched from the individual exhaust pipe 121 to the individual exhaust pipe 122 is considered. In this case, the control unit 18 controls the driving unit 326 of the switching mechanisms 320_1 and 320_2 to communicate the exhaust gas introduction port 322 of the switching mechanism 320_2 with the exhaust gas introduction unit 310, and make the outside of the remaining switching mechanisms 320_1 and 320_3 The air introduction port 323 communicates with the external air introduction part 330 . As a result, acid-based exhaust gas flows into the individual exhaust pipe 122 , and external air flows into the remaining individual exhaust pipes 121 and 123 . In addition, at this time, the ambient gas around the supply line of the processing fluid introduced through the exhaust port 501 a is also included in the external air.

In this way, in the substrate processing system 1 of this embodiment, while the exhaust from the processing unit 16 flows into any of the individual exhaust pipes 121 to 123 , outside air flows into the remaining individual exhaust pipes 121 to 123 . . Therefore, the flow rates of the gases flowing into the individual exhaust pipes 121 to 123 do not vary greatly before and after the exhaust switching. Therefore, it is possible to suppress pressure fluctuations in the processing unit 16 caused by fluctuations in the flow rate.

In addition, in the substrate processing system 1 of the present embodiment, by providing the outside air introduction part 330 communicating with each outside air introduction port 323 at the front stage of the outside air introduction port 323 included in the switching mechanisms 320_1 to 320_3, it is also possible to suppress the The pressure of the processing unit 16 fluctuates during exhaust switching.

Next, it is conceivable to switch the outflow destination of the exhaust gas from the individual exhaust pipe 122 through which the acid-based exhaust gas flows to the individual exhaust pipe 123 through which the organic-based exhaust gas flows. In this case, the control unit 18 controls the driving unit 326 of the switching mechanisms 320_2 and 320_3 to communicate the exhaust gas introduction port 322 of the switching mechanism 320_3 with the exhaust gas introduction unit 310, so that the outside of the remaining switching mechanisms 320_1 and 320_2 The air introduction port 323 communicates with the external air introduction part 330 . Thus, while the organic exhaust gas flows into the individual exhaust pipe 123 , outside air flows into the remaining individual exhaust pipes 121 , 122 . In addition, at this time, the ambient gas around the supply line of the processing fluid introduced through the exhaust port 501 a is also included in the external air.

Here, when switching from, for example, rinsing processing described later to drying processing, when switching the type of processing liquid used in processing unit 16 to IPA, which is an organic processing liquid, control unit 18 controls The FFU 21 controls to change the type of gas supplied to the processing unit 16 from, for example, clean air to a low dew point gas such as CDA (Clean Dry Air) whose humidity or oxygen concentration is lower than that of the clean air.

Next, an example of substrate processing executed in the substrate processing system 1 of the present embodiment will be described with reference to FIG. 9 . FIG. 9 is a flowchart showing an example of a processing procedure of substrate processing executed in the substrate processing system 1 .

In addition, a series of substrate processing shown in FIG. 9 is executed by controlling the processing unit 16 , the exhaust switching unit 300 , and the like by the control unit 18 . The control unit 18 is, for example, a CPU (Central Processing Unit), and controls the processing unit 16 , the exhaust switching unit 300 , etc. according to a program (not shown) stored in the storage unit 19 .

As shown in FIG. 9, in the processing unit 16, first, the first chemical solution processing is performed (step S101). In this first chemical solution processing, first, the driving unit 33 rotates the holding unit 31, thereby rotating the wafer W held on the holding unit 31 at a predetermined rotational speed. Next, the nozzle 41 of the processing fluid supply part 40 is located above the center of the wafer W. As shown in FIG. Thereafter, valve 75 is opened for a predetermined time, and SC1 supplied from alkali-based processing liquid supply source 71 is supplied from nozzle 41 to the surface of wafer W to be processed. The SC1 supplied to the wafer W spreads over the entire surface of the wafer W to be processed by the centrifugal force generated by the rotation of the wafer W. Thereby, the surface to be processed of the wafer W is processed by SC1.

While the first chemical solution treatment is being performed, alkali-based exhaust as exhaust from the treatment unit 16 is discharged from the first exhaust pipe 200 to the individual exhaust pipe 121 via the switching mechanism 320_1 of the exhaust switching unit 300 . In addition, the ambient gas around the supply line of the processing fluid flowing in from the exhaust port 501 a is taken in as outside air, and is discharged to the individual exhaust pipes 122 , 123 .

Next, in the processing unit 16, a first rinse process of rinsing the surface of the wafer W to be processed by DIW is performed (step S102). In this first rinsing process, valve 78 is opened for a predetermined time, DIW supplied from DIW supply source 74 is supplied from nozzle 41 to the surface of wafer W to be processed, and SC1 remaining on wafer W is rinsed. While the first flushing process is being performed, the exhaust gas from the processing unit 16 is discharged to, for example, the individual exhaust pipe 121 . In addition, the ambient gas around the supply line of the processing fluid flowing in from the exhaust port 501a is taken in as outside air, and is discharged to, for example, the individual exhaust pipes 122 and 123 .

Next, in the processing unit 16, the second chemical solution processing is performed (step S103). In this second chemical solution processing, the valve 76 is opened for a predetermined time, and the HF supplied from the acid-based processing liquid supply source 72 is supplied from the nozzle 41 to the surface of the wafer W to be processed. The HF supplied to the wafer W spreads over the entire surface of the wafer W to be processed by the centrifugal force generated by the rotation of the wafer W. As a result, the surface of the wafer W to be processed is HF-processed.

Before starting the second chemical solution treatment, the control unit 18 controls the exhaust gas switching unit 300 to switch the outflow destination of the exhaust gas from the individual exhaust pipe 121 to the individual exhaust pipe 122 . Thus, during the second chemical solution treatment, acid-based exhaust as exhaust from the treatment unit 16 is discharged from the first exhaust pipe 200 to the individual exhaust pipe 122 via the switching mechanism 320_2 of the exhaust switching unit 300 . In addition, the ambient gas around the supply line for the processing fluid that has flowed in from the exhaust port 501a is taken in as outside air and exhausted to the individual exhaust pipes 121,123.

Next, in the processing unit 16, a second rinse process of rinsing the surface of the wafer W to be processed by DIW is performed (step S104). In this second rinsing process, valve 78 is opened for a predetermined time, and DIW supplied from DIW supply source 74 is supplied from nozzle 41 to the surface of wafer W to be processed, and HF remaining in wafer W is rinsed. While this second flushing process is being performed, the exhaust gas from the processing unit 16 is discharged to, for example, the individual exhaust pipe 122 . In addition, the ambient gas around the supply line for the processing fluid that has flowed in from the exhaust port 501 a is taken in as outside air and exhausted to, for example, the individual exhaust pipes 121 and 123 .

Next, in the processing unit 16, drying processing is performed (step S105). In this drying process, the valve 77 is opened for a predetermined time, and the IPA supplied from the organic process liquid supply source 73 is supplied from the nozzle 41 to the surface of the wafer W to be processed. The IPA supplied to the wafer W spreads over the entire surface of the wafer W to be processed by the centrifugal force generated by the rotation of the wafer W. As a result, DIW remaining on the surface of the wafer W to be processed is replaced with IPA whose volatility is higher than that of DIW. Thereafter, in the processing unit 16 , the rotation speed of the wafer W is increased to shake off the IPA on the wafer W to dry the wafer W.

The controller 18 controls the exhaust gas switching unit 300 to switch the outflow destination of the exhaust gas from the individual exhaust pipe 122 to the individual exhaust pipe 123 before starting the drying process. Thus, during the drying process, the organic exhaust gas as the exhaust gas from the processing unit 16 is discharged from the first exhaust pipe 200 to the individual exhaust pipe 123 via the switching mechanism 320_3 of the exhaust switching unit 300 . In addition, the ambient gas around the supply line for the processing fluid that has flowed in from the exhaust port 501 a is taken in as outside air and exhausted to the individual exhaust pipes 121 , 122 .

In addition, the control unit 18 switches the type of gas supplied from the FFU 21 from clean air to low dew point gas before starting the drying process. At this time, the control unit 18 exhausts the outside air taken in by the introduction unit 21a to the outside. Accordingly, even when the type of gas supplied to the processing unit 16 is changed, pressure fluctuations in the processing unit 16 can be suppressed.

Thereafter, in the processing unit 16 , after the rotation of the wafer W by the driving unit 33 is stopped, the wafer W is carried out from the processing unit 16 by the substrate transfer device 17 (see FIG. 1 ). In this way, a series of substrate processing for one wafer W is completed.

As described above, the substrate processing system 1 (corresponding to an example of a "substrate processing apparatus") of this embodiment includes a plurality of processing units 16 (corresponding to an example of a "processing section"), circulation lines 104 (corresponding to a "processing unit"), and An example of the fluid supply line") and the frame structure 400.

A plurality of processing units 16 are arranged horizontally, and process a wafer W (corresponding to an example of a “substrate”) using a processing fluid. The circulation line 104 has a horizontal pipe 104H arranged horizontally below the plurality of processing units 16 and branch lines 112 (corresponding to an example of “branch pipes”) branched from the horizontal pipe 104H and respectively connected to the processing units 16 .

The frame structure 400 has a plurality of columns 401 and a plurality of beams 402 , and accommodates a plurality of processing units 16 and circulation lines 104 in a storage space formed by the columns 401 and the beams 402 .

In addition, the beam portion 402 includes a first beam portion 402-1 and a second beam portion 402-2 arranged in parallel to the direction in which the processing units 16 are arranged. In addition, the horizontal piping 104H is disposed between the first beam portion 402-1 and the second beam portion 402-2, between the upper surface and the lower surface of the first beam portion 402-1, and spans over a plurality of processing units 16. configuration.

Therefore, according to the substrate processing system 1 of the present embodiment, the height of the apparatus can be suppressed while stacking the processing units 16 .

In addition, in the above-mentioned embodiment, the example in which the horizontal piping 104H is accommodated between the opposing surfaces of the first beam part 402-1 and the second beam part 402-2 was shown (see, for example, FIG. 7F ), However, it may not be completely housed between the opposing surfaces. That is, at least a part of the horizontal pipe 104H may be included between the opposing surfaces.

Similarly, in the above-mentioned embodiment, the vertical piping 104V was shown so that it may be accommodated between the opposing surfaces of the first column part 401-1 group or between the opposing surfaces of the second column part 401-2 group. An example of configuration (see, for example, FIG. 7C ), but it may not be completely accommodated between the opposing surfaces. That is, at least a part of the vertical piping 104V may be included between the opposing surfaces.

Further effects and modified examples can be easily derived by those skilled in the art. Therefore, the wider aspects of the present invention are not limited to the specific details and typical embodiments expressed and described above. Therefore, various modifications can be made without departing from the spirit or scope of the concept of the general utility model defined by the claims and their equivalents.

Claims (9)

1. A substrate processing apparatus, characterized in that, The substrate processing device has: a plurality of processing units arranged in a horizontal direction and using a processing fluid to process the substrate; a treatment fluid supply line having: a horizontal pipe disposed horizontally below the plurality of treatment units; and a branch pipe branched from the horizontal pipe to be respectively connected to the treatment units; a frame structure having a plurality of columns and a plurality of beams, and accommodating the plurality of treatment units and the treatment fluid supply line in a storage space formed by the columns and the beams, The beam part includes a first beam part and a second beam part arranged parallel to the arrangement direction of the plurality of treatment parts, The horizontal piping is arranged between the first beam part and the second beam part, between the upper surface and the lower surface of the first beam part, and is arranged across the plurality of treatment parts. 2. The substrate processing apparatus according to claim 1, wherein: The plurality of processing units arranged in a row along the horizontal direction are at least arranged in two layers up and down, The treatment fluid supply line includes a vertical pipe connecting the horizontal pipes of the plurality of treatment units on the upper side and the horizontal pipes of the plurality of treatment units on the lower side, The column portion includes a group of first column portions provided on one end side of the first beam portion and the second beam portion so as to be perpendicular to the first beam portion and the second beam portion. one end side of the first beam portion; a group of second column portions, which are provided on the other end side of the first beam portion and on the second beam portion in a manner perpendicular to the first beam portion and the second beam portion the other side, The vertical piping is disposed between opposing surfaces of the group of the first column parts or between opposing surfaces of the group of the second column parts. 3. The substrate processing apparatus according to claim 1, wherein: This substrate processing apparatus further includes a plate member connecting the lower surface of the first beam portion and the lower surface of the second beam portion. 4. The substrate processing apparatus according to claim 2, wherein: This substrate processing apparatus further includes a plate member connecting the lower surface of the first beam portion and the lower surface of the second beam portion. 5. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The beam portion is a square material. 6. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The substrate processing apparatus further includes a housing for accommodating the horizontal piping. 7. The substrate processing apparatus according to claim 5, wherein: The substrate processing apparatus further includes a housing for accommodating the horizontal piping. 8. The substrate processing apparatus according to claim 6, wherein: The substrate processing apparatus further includes a flow control unit provided in the branch pipe and controlling the flow of the processing fluid, The flow control unit is accommodated in the housing. 9. The substrate processing apparatus according to claim 7, wherein: The substrate processing apparatus further includes a flow control unit provided in the branch pipe and controlling the flow of the processing fluid, The flow control unit is accommodated in the housing.