CN205508801U - Clamping ring structure - Google Patents
Clamping ring structure Download PDFInfo
- Publication number
- CN205508801U CN205508801U CN201620256134.4U CN201620256134U CN205508801U CN 205508801 U CN205508801 U CN 205508801U CN 201620256134 U CN201620256134 U CN 201620256134U CN 205508801 U CN205508801 U CN 205508801U
- Authority
- CN
- China
- Prior art keywords
- ring structure
- wafer
- pressure ring
- clamping ring
- inward flange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000009826 distribution Methods 0.000 claims description 3
- 230000006835 compression Effects 0.000 claims description 2
- 238000007906 compression Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000002788 crimping Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000008961 swelling Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
For stability and the production efficiency who improves technology, avoid producing the lobe of a leaf and lead to the condemned problem of whole wafer, the utility model provides a novel clamping ring structure. This clamping ring structure includes annular clamping ring body, and the lower surface of clamping ring inward flange is provided with perpendicular decurrent swelling three at least, and these swell and distribute along the circumference is impartial, satisfy in process protruding crimping is at the upper surface of wafer. The utility model discloses a breaking out on the clamping ring inward flange sets up the vertical direction is being guaranteed under the stable prerequisite of crimping, can reduce the area of contact of clamping ring and wafer as far as possible, has avoided the adhesion problem of the two, do not influence simultaneously the effect of technology.
Description
Technical field
This utility model relates to the ring structure in a kind of wafer fabrication processes.
Background technology
In the course of processing of wafer, in order to obtain required figure, need there is mask pattern
Wafer performs etching, and inductively coupled plasma etching (ICP) and reactive ion etching (RIE) are quasiconductor necks
The wide variety of two kinds of dry etching methods in territory, can produce amount of heat in etching process, make wafer quilt
It is heated to higher temperature, as carbonization under the photoresist high temperature of mask, cannot remove dry when causing removing photoresist
Only, thus in film layer, introduce impurity, and then affect the final performance of product.Thus carry out dry etching
Time, often it is passed through helium at wafer rear and cools down, for preventing cooling gas from making wafer move, need
Wafer is fixed by pressure ring, and pressure ring that present stage is used is many to be covered outside wafer by inner ring edge portion
Edge fixes.
But, above-mentioned pressure ring is after finishing etching technics, owing to etch product is at wafer and pressure ring contact edge
The gathering of edge causes wafer can be bonded on pressure ring, and the wafer finished can not be sent out by the mechanical arm of transmission
Process cavity, closes hull closure after needing vacuum breaker, opens process cavity and manually take sheet.Not only destroy work
The stability of skill, reduce production efficiency, and sliver may be produced and cause whole wafer loss.
Chinese patent literature CN201520355258.3 discloses a kind of wafer production pressure ring, for minimizing
Waste of raw materials, manufacture the consideration of more profit, prolong towards the center of circle along pressure ring in-plane along inner circle periphery
Stretch and have 2N paw.
Chinese patent literature CN201520331302.7 discloses a kind of carrier for dry etching, should
The design of structure is complex, uses annular boss the holding as wafer identical with processed wafer size
Carrying platform, the upper surface at annular boss arranges seal washer, is socketed a pressure in the periphery of annular boss
Ring, this pressure ring exceeds the part of wafer and extends several paws (paw phase towards the center of circle along its in-plane
Pressure ring body is formed to the bending of 90 degree), these paws and aforementioned seal packing ring are respectively from upper and lower two
Direction forms face contact to wafer and grips.
Both the above scheme is all mainly from the working (finishing) area increasing substrate (wafer) surface, improves wafer
Area utilization is with solution from the point of view of minimizing waste of raw materials, and the actual feelings to wafer adhesion
Condition and reason and consequence do not give enough attention, the scheme that the most therefore contact crimping in these faces is fixing
Actual effect is the most not ideal enough.
Utility model content
In order to improve stability and the production efficiency of technique, it is to avoid produce sliver and cause whole wafer loss
Problem, the utility model proposes a kind of new ring structure.
The technical solution of the utility model is as follows:
This ring structure includes the pressure ring body of annular, and the lower surface of pressure ring inward flange is provided with at least three
Projection vertically downward, these projections circumferentially equal distribution, meet in projection pressure described in technical process
It is connected on the upper surface of wafer.
On the basis of above scheme, this utility model has made following important optimization the most further:
The compression joint area of single projection is less than 2mm2。
All projections are satisfied by and wafer point cantact.
Projection be shaped as rounding stage body, inverted cone or hemisphere.
Projection is less than 1 millimeter at the height of vertical direction.
Projection has three or four.
The interior circular diameter 2-3mm less than brilliant diameter of a circle of pressure ring body.
The upper surface of pressure ring body to pressure ring inward flange, has a thickness at close pressure ring inward flange 1-2cm
Spend the most thinning slope.
Technique effect of the present utility model is as follows:
By arranging the projection in vertical direction at pressure ring inward flange, on the premise of ensureing crimping stability,
Can reduce the contact area of pressure ring and wafer as much as possible, it is to avoid the two adhesion problems；Simultaneously
Do not affect the effect of technique.
Accompanying drawing explanation
Fig. 1 is the upward view of pressure ring of the present utility model.
Fig. 2 is the front view of pressure ring of the present utility model.
Drawing reference numeral illustrates:
1-pressure ring outward flange；Border, 2-slope (pressure ring upper surface at the inward flange 1-2cm to inward flange,
There is the slope that a thickness is the most thinning)；3-pressure ring lower surface projection, 4-pressure ring inward flange.
Detailed description of the invention
As shown in Figure 1 and Figure 2, the lower surface increase at pressure ring inward flange be arranged symmetrically with four is vertically downward
Kick, these kicks circumferentially equal distribution, in technical process, the lower surface of projection is crimped on crystalline substance
The upper surface of circle, the shape of projection can optimize and is designed as rounding stage body, inverted cone or hemisphere etc. with reality
Existing pressure ring and the point cantact of wafer, stop the adhesion problems of the two.
Kick is less than 1 millimeter at the height of vertical direction.
Pressure ring material preferably quartz material.
Wafer is sent to the work top of vacuum chamber by mechanical arm, and workbench has three thimbles by wafer
Jack-up, after mechanical arm withdraws from vacuum chamber, three thimbles are fallen, and wafer lies in work top, pressure ring
Under press, the jut of pressure ring and wafer upper surface.
This utility model, by the transformation of quartz pressure ring, will not etch rear bonding die phenomenon in generation；Do not send out
Raw bonding die phenomenon, avoids the need for shutdown, it is not necessary to destroys chamber vacuum and opens cavity, from without right
Technology stability impacts, nor needs again to start shooting and by a period of time restorer chamber
Body, saves the time；Need not use plasma clean cavity；Need not again to verify the etching of equipment
Speed, uniformity and stability etc..
Claims (8)
1. a ring structure, including the pressure ring body of annular, it is characterised in that: under pressure ring inward flange
Surface configuration has at least three projection vertically downward, these projections circumferentially equal distribution, meets in work
During skill, described projection is crimped on the upper surface of wafer.
Ring structure the most according to claim 1, it is characterised in that: the compression joint area of single projection
Less than 2mm2。
Ring structure the most according to claim 2, it is characterised in that: all projections are satisfied by with brilliant
Round dot contacts.
Ring structure the most according to claim 2, it is characterised in that: being shaped as down of described projection
Rotary-table, inverted cone or hemisphere.
Ring structure the most according to claim 1, it is characterised in that: described projection is in vertical direction
Height less than 1 millimeter.
Ring structure the most according to claim 1, it is characterised in that: described projection have three or
Four.
Ring structure the most according to claim 1, it is characterised in that: the inner circle of described pressure ring body
Diameter 2-3mm less than brilliant diameter of a circle.
Ring structure the most according to claim 1, it is characterised in that: the upper table of described pressure ring body
To pressure ring inward flange, there is the slope that a thickness is the most thinning in face at close pressure ring inward flange 1-2cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620256134.4U CN205508801U (en) | 2016-03-30 | 2016-03-30 | Clamping ring structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620256134.4U CN205508801U (en) | 2016-03-30 | 2016-03-30 | Clamping ring structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205508801U true CN205508801U (en) | 2016-08-24 |
Family
ID=56735675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620256134.4U Active CN205508801U (en) | 2016-03-30 | 2016-03-30 | Clamping ring structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205508801U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110587260A (en) * | 2019-10-08 | 2019-12-20 | 大连理工大学 | Self-adaptive elastic compression ring |
| CN115692301A (en) * | 2021-07-29 | 2023-02-03 | 北京北方华创微电子装备有限公司 | Process Chambers and Wafer Processing Methods |
-
2016
- 2016-03-30 CN CN201620256134.4U patent/CN205508801U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110587260A (en) * | 2019-10-08 | 2019-12-20 | 大连理工大学 | Self-adaptive elastic compression ring |
| CN115692301A (en) * | 2021-07-29 | 2023-02-03 | 北京北方华创微电子装备有限公司 | Process Chambers and Wafer Processing Methods |
| CN115692301B (en) * | 2021-07-29 | 2023-11-14 | 北京北方华创微电子装备有限公司 | Process chamber and wafer processing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |