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CN1925001B - Magnetic read/write head with micro-striations and method of making same - Google Patents

Magnetic read/write head with micro-striations and method of making same Download PDF

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Publication number
CN1925001B
CN1925001B CN2005100969942A CN200510096994A CN1925001B CN 1925001 B CN1925001 B CN 1925001B CN 2005100969942 A CN2005100969942 A CN 2005100969942A CN 200510096994 A CN200510096994 A CN 200510096994A CN 1925001 B CN1925001 B CN 1925001B
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magnetic head
magnetic
head
magnetic read
process chamber
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CN1925001A (en
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上田博国
马洪涛
方宏新
乔晓峰
乔亨
朱勇
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SAE Magnetics HK Ltd
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Abstract

A method of forming a micro-groove in an Air Bearing Surface (ABS) of a magnetic read/write head comprising the steps of: (a) arranging a plurality of magnetic head arrays in a tray, each magnetic head including a pole tip (pole tip) facing upward; (b) loading the tray into a process chamber and evacuating the process chamber to a vacuum having a predetermined pressure; (c) introducing an oxygen-containing process gas into the process chamber; (d) the magnetic head is exposed to etching means (etchingmeans) in the process gas and the surface thereof is etched to form a distinct two-step structure thereon. The invention also discloses a structure of the magnetic read/write head formed by the method.

Description

具有微纹的磁性读/写磁头及其制造方法Magnetic read/write head with micrograin and method of manufacturing the same

技术领域technical field

本发明涉及一种用于硬盘驱动器(HDD)的磁性读/写磁头及其制造方法,尤指一种在磁头的空气支承面(ABS)上形成微纹(micro-texture)的方法。The present invention relates to a magnetic read/write head for a hard disk drive (HDD) and a method of manufacturing the same, and more particularly to a method of forming micro-texture on an air bearing surface (ABS) of the head.

背景技术Background technique

硬盘驱动器正在随着数字设备,诸如数字照相机、数字音频/视频设备甚至数字电视机等需要大容量存储空间的设备的发展而迅速发展。因此,硬盘驱动器的市场需求很大,这种市场需求促使硬盘驱动器向两个方面发展:高的面密度及小的体积。Hard disk drives are developing rapidly with the development of digital devices, such as digital cameras, digital audio/video equipment, and even digital televisions, which require large storage spaces. Therefore, the market demand of the hard disk drive is great, and this market demand prompts the development of the hard disk drive in two aspects: high areal density and small volume.

所述硬盘驱动器包括复数磁盘,每个磁盘表面具有用于记录数字信息的磁性镀层。所述磁性读/写磁头可在所述磁盘的磁性表面上移动而存取其上的数据。高的面记录密度可以通过改善磁盘表面的磁性镀层的性能或减小在磁性镀层上存取数据的磁性读/写磁头的尺寸而获得。减小读/写磁头的尺寸则意味着读/写信号变弱,相应地,磁轨宽度和/或磁轨间距亦相应减小。然而,减小磁轨宽度和/或磁轨间距的关键在于改善读/写磁头的位置控制能力,例如飞行高度的控制能力,其代表当磁头在磁盘表面移动时磁头与磁盘表面的距离,也包括磁头和磁盘表面的保护镀层的厚度和磁头极尖凹陷(recession)等等。The hard disk drive includes a plurality of magnetic disks each having a magnetic coating on its surface for recording digital information. The magnetic read/write head is movable over the magnetic surface of the disk to access data thereon. High areal recording densities can be achieved by improving the performance of the magnetic coating on the disk surface or by reducing the size of the magnetic read/write heads that access data on the magnetic coating. Reducing the size of the read/write head means that the read/write signal becomes weaker, and the track width and/or track pitch are correspondingly reduced. However, the key to reducing the track width and/or track pitch is to improve the position control capability of the read/write head, such as the control capability of the flying height, which represents the distance between the head and the disk surface when the head moves on the disk surface, and also Including the thickness of the protective coating on the surface of the magnetic head and the magnetic disk and the recess of the magnetic head pole tip (recession) and so on.

另一方面,降低硬盘驱动器的体积是一个系统工程,不仅要涉及到改变硬盘驱动器各部件的物理尺寸,还涉及到磁头的飞行动力性能的再优化。目前常用的硬盘驱动器是用于台式计算机的3.5”硬盘驱动器和用于笔记本电脑的2.5”硬盘驱动器。而用于便携式数字音频/视频设备的硬盘驱动器的尺寸已经降到1”甚至0.85”。On the other hand, reducing the volume of the hard disk drive is a systematic project, which not only involves changing the physical size of each component of the hard disk drive, but also involves re-optimization of the flight dynamic performance of the magnetic head. Commonly used hard drives today are 3.5" hard drives for desktop computers and 2.5" hard drives for laptops. The size of hard drives for portable digital audio/video equipment has dropped to 1" or even 0.85".

磁性读/写磁头是硬盘驱动器的关键部件。磁性读/写磁头包括控制磁头飞行高度的陶瓷基体。在所述陶瓷基体的表面采用沉积法或蚀刻法形成诸如“起飞、降落触点”、“气垫面”和负压腔等图案(pattern)。所述磁性读/写磁头还包括排列在所述陶瓷基体上的功能多层结构。所述功能多层结构包括由薄膜磁性写入线圈和巨磁阻电路组成的极尖(pole tips)以及读/写线连接触点或焊接触点。The magnetic read/write head is a critical component of a hard drive. Magnetic read/write heads include a ceramic substrate that controls the head fly height. Patterns such as "take-off and landing contacts", "air cushion surfaces" and negative pressure chambers are formed on the surface of the ceramic substrate by deposition or etching. The magnetic read/write head also includes a functional multilayer structure arranged on the ceramic substrate. The functional multilayer structure includes pole tips consisting of thin film magnetic write coils and giant magnetoresistive circuits, and read/write wire connection contacts or solder contacts.

所述磁性读/写磁头在磁性极尖处具有一个非常平坦的表面。所述平坦的表面通常通过研磨磁性读/写磁头的基体而形成。所述磁头的非常平坦的表面的粗糙度小于0.3nm。研磨程序(lapping process)也可以帮助控制极尖凹陷。The magnetic read/write head has a very flat surface at the magnetic pole tips. The planar surface is typically formed by grinding the substrate of the magnetic read/write head. The very flat surface of the head has a roughness of less than 0.3 nm. A lapping process can also help control tip dishing.

对于小尺寸的硬盘驱动器(一般被称作微型驱动器)而言,磁头基体的表面粗糙度增加,即具有较粗糙的基体表面,目的是为了改善磁性读/写磁头的起飞(take-off)和降落(touch-down)性能。所述磁头基体通常用AlTiC制成,其中AlTiC是Al2O3(氧化铝)和TiC(碳化钛)的混合物,包括嵌入Al2O3基体相中的岛状TiC颗粒。For small-sized hard disk drives (commonly referred to as micro-drives), the surface roughness of the head substrate is increased, that is, with a rougher substrate surface, in order to improve the take-off (take-off) and Landing (touch-down) performance. The head substrate is usually made of AlTiC, which is a mixture of Al2O3 (aluminum oxide ) and TiC (titanium carbide), including island-shaped TiC particles embedded in the Al2O3 matrix phase.

美国专利第5,010,429和5,052,099号揭露了采用溅射工艺(sputtering process)形成磁头基体粗糙表面的技术。磁头基体粗糙度的目标高度(从顶端到底部的距离)约为50-300埃,峰值(突出区域)宽度和峰间距离约为5-20微米。这对于微型驱动器来说是不够的,本发明的目的就是提供一种在磁性读/写磁头的空气支承面(ABS)上的改良微纹(micro-texture),以改善磁头的飞行性能。US Patent Nos. 5,010,429 and 5,052,099 disclose techniques for forming a rough surface of a magnetic head substrate by using a sputtering process. The target height (distance from top to bottom) of the head substrate roughness is about 50-300 angstroms, and the peak (protruded area) width and peak-to-peak distance are about 5-20 microns. This is not sufficient for micro drives, and it is an object of the present invention to provide an improved micro-texture on the air bearing surface (ABS) of a magnetic read/write head to improve the flying performance of the head.

发明内容Contents of the invention

本发明的主要目的在于提供一种磁盘驱动器上的、其空气支承面上具有可提高磁性读/写磁头的飞行性能的低高度微纹的磁性读/写磁头。SUMMARY OF THE INVENTION It is a primary object of the present invention to provide a magnetic read/write head on a disk drive having low height microgravity on the air bearing surface which enhances the flying performance of the magnetic read/write head.

本发明的另一目的在于提供一种形成微纹的方法,该方法可通过将溅射(sputtering)或离子束蚀刻(ion beam etching,IBE)应用于常规磁头制造工艺中而实现。Another object of the present invention is to provide a method for forming microtextures, which can be realized by applying sputtering or ion beam etching (IBE) to conventional magnetic head manufacturing processes.

本发明的另一目的在于提供一种形成微纹的方法,该方法不会引起不希望产生的对磁性磁头的电性损毁,同时可维持产品高良率。Another object of the present invention is to provide a method for forming micro-textures, which will not cause undesired electrical damage to the magnetic head, while maintaining a high yield of products.

为达到上述目的,根据本发明,一种在磁性读/写磁头上形成微纹的方法,包括如下步骤:提供一个具有研磨后的表面的磁头;用等离子或离子束在包含氧气的气体中蚀刻上述研磨后的表面,从而提高微纹的氧化铝基相在粒子状的碳化钛第二相上的选择性,进而形成多个由碳化钛粒子构成顶台阶、氧化铝构成底台阶的两阶结构。所述底台阶到顶台阶的距离大约为10-50埃,相邻碳化钛粒子间的距离大约为0.2-3μm。To achieve the above objects, according to the present invention, a method of forming microgrooves on a magnetic read/write head, comprising the steps of: providing a magnetic head with a ground surface; etching with a plasma or ion beam in a gas containing oxygen The above-mentioned ground surface can improve the selectivity of the micro-grained alumina-based phase on the granular titanium carbide second phase, and then form a plurality of two-stage structures with titanium carbide particles forming the top step and alumina forming the bottom step. . The distance from the bottom step to the top step is about 10-50 angstroms, and the distance between adjacent titanium carbide particles is about 0.2-3 μm.

本发明还提供了一种空气支承面上形成有微纹的磁性读/写磁头。所述磁头具有比传统磁头更优良的起飞和降落性能。此外,在磁性读/写磁头上制造微纹时不会产生电子损毁现象,产品也可维持高良率。The present invention also provides a magnetic read/write head with microgrooves formed on the air bearing surface. The magnetic head has better take-off and landing performance than conventional magnetic heads. In addition, there is no electronic damage to the fabrication of micropatterns on the magnetic read/write head, and the product can maintain high yield.

为使本发明更加容易理解,下面将结合附图进一步阐述本发明不同的具体实施例。In order to make the present invention easier to understand, different specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

附图说明Description of drawings

图1A-1D为制造本发明磁性读/写磁头的一种流程的示意图;1A-1D are schematic diagrams of a process for manufacturing the magnetic read/write head of the present invention;

图2A-2D为制造本发明磁性读/写磁头的另一种流程的示意图;2A-2D are schematic diagrams of another process for manufacturing the magnetic read/write head of the present invention;

图3为通过等离子在磁性读/写磁头上形成本发明所述微纹的设备的示意图;3 is a schematic diagram of an apparatus for forming micro-grains according to the present invention on a magnetic read/write head by plasma;

图4为通过离子束在磁性读/写磁头上形成本发明所述微纹的设备的示意图;Fig. 4 is the schematic diagram of the device that forms the micro-grain of the present invention on the magnetic read/write head by ion beam;

图5展示了所述磁头具有微纹的AlTiC表面的形态;Figure 5 shows the morphology of the AlTiC surface of the magnetic head with micrograin;

图5A-5E分别展示了本发明所述磁头在不同状态下的微纹。5A-5E respectively show the microstripes of the magnetic head of the present invention in different states.

具体实施方式Detailed ways

附图、特别是图1A-1D展示了在磁性读/写磁头的空气支承面(ABS)上形成微纹的过程,所述磁头可以是30%(pico)的磁头或者是20%的磁头,如前所述,所述磁性读/写磁头可在表面涂有一层磁性材料的旋转磁盘的表面上移动。磁性读/写磁头有一个空气支承面(ABS),面向磁性记录表面并从该磁性记录表面读取或写入数据。参考图1A,所述磁性读/写磁头10包括一个位于磁盘上且面对磁盘的磁性记录表面(未示出)的表面12。所述表面12通过下述流程被制成ABS。The accompanying drawings, and in particular FIGS. 1A-1D , illustrate the process of forming microgrooves on the air bearing surface (ABS) of a magnetic read/write head, either a 30% (pico) head or a 20% head, As previously mentioned, the magnetic read/write head is movable over the surface of a rotating disk coated with a layer of magnetic material. Magnetic read/write heads have an air bearing surface (ABS) that faces and reads or writes data from a magnetic recording surface. Referring to FIG. 1A, the magnetic read/write head 10 includes a surface 12 positioned on a magnetic disk and facing a magnetic recording surface (not shown) of the magnetic disk. The surface 12 is made of ABS by the procedure described below.

首先,所述表面12要经过细研磨使其光滑,并且表面粗糙度达到0.2-0.4nm,如图1A所示。然后在研磨过的表面12上镀一层防护层,例如类金刚石碳(DLC)层。接下来,表面12要经历一系列的处理过程,包括光刻(photolithography)和离子蚀刻,从而在表面12上形成用来控制气流和压力的凹槽(或台阶)14。随后在表面12上形成微纹(以阴影线示出),如图1C所示。接着进行进一步处理而完成如图1D所示的ABS面的加工。First, the surface 12 is finely ground to make it smooth, and the surface roughness reaches 0.2-0.4 nm, as shown in FIG. 1A . A protective layer, such as a diamond-like carbon (DLC) layer, is then applied to the ground surface 12 . Next, the surface 12 undergoes a series of processing procedures, including photolithography and ion etching, so as to form grooves (or steps) 14 on the surface 12 for controlling air flow and pressure. Microrelief (shown in hatching) is then formed on surface 12, as shown in Figure 1C. Further processing is then carried out to complete the processing of the ABS surface as shown in FIG. 1D .

可选择地,如图2A-2D所示,所述磁头10的表面12,在被研磨及镀上类金刚石碳层(参图2A)后,被处理而形成微纹(micro-texture),如图2B阴影线所示。然后,如图2C所示,在表面12上形成凹槽14(或台阶),接着进行进一步处理而完成如图2D所示的ABS的加工。Optionally, as shown in FIGS. 2A-2D, the surface 12 of the magnetic head 10, after being ground and coated with a diamond-like carbon layer (see FIG. 2A), is processed to form micro-textures, such as Figure 2B is shown hatched. Then, as shown in FIG. 2C, grooves 14 (or steps) are formed on the surface 12, followed by further processing to complete the processing of ABS as shown in FIG. 2D.

光罩,包括正极性光致抗蚀光罩和负极性光致抗蚀光罩,可在形成微纹的过程中,用于保护表面12上的特定区域,例如磁极尖,从而使微纹不会形成在这些区域上。Photomasks, including positive polarity photoresist masks and negative polarity photoresist masks, can be used to protect specific areas on the surface 12, such as magnetic pole tips, during the formation of micro-strikes, so that the micro-strikes do not will be formed in these areas.

传统上可利用化学气相沉积法(CVD)、离子束沉积法(IBD)和滤波阴极电弧法(FCA)在磁性读/写磁头上形成保护层(overcoat)。一般情况下,形成保护层的工艺通常包括三步:预清洗、镀支持层(adhesion layer)和镀类金刚石碳层(DLC)。Overcoats have traditionally been formed on magnetic read/write heads using chemical vapor deposition (CVD), ion beam deposition (IBD), and filtered cathodic arc (FCA). In general, the process of forming a protective layer usually includes three steps: pre-cleaning, plating a support layer (adhesion layer) and plating a diamond-like carbon layer (DLC).

所述磁头通常在空气中被清洗,然后装入一个被抽真空的真空处理室中。磁头将被处理的表面在空气中通常会吸收湿气、二氧化碳、甚至清洗磁头时的有机溶剂。预清洗时,通过惰性气体,例如氩进行等离子蚀刻或离子束蚀刻去除将被处理的磁头的表面污染。经过蚀刻过程,极少量材料从磁头基体表面上被去除,而且表面的粗糙度也没有发生显著变化。换句话说,磁头的表面粗糙度(Ra)仍然保持在0.3nm左右。The heads are typically cleaned in air and then loaded into an evacuated vacuum chamber. The surface on which the magnetic head will be treated will usually absorb moisture, carbon dioxide, and even organic solvents when cleaning the magnetic head in the air. During pre-cleaning, plasma etching or ion beam etching with an inert gas such as argon removes surface contamination of the magnetic head to be processed. Through the etching process, very little material is removed from the surface of the head base without significant changes in surface roughness. In other words, the surface roughness (Ra) of the magnetic head remains around 0.3nm.

预清洗后,在磁头被处理的表面上镀上一层支持层。所述支持层最好用硅来形成,因为硅可以使类金刚石碳层(DLC layer)更容易镀上。另外,在镀类金刚石碳层时,甲烷或者乙烯在CVD工艺和IBD工艺作为前驱体(precursor),而纯石墨柱(graphite cylinder)被用作FCA靶材。After pre-cleaning, a support layer is plated on the treated surface of the head. The support layer is preferably formed with silicon, because silicon can make the diamond-like carbon layer (DLC layer) easier to coat. In addition, when coating the diamond-like carbon layer, methane or ethylene is used as a precursor in the CVD process and IBD process, while the pure graphite cylinder is used as the FCA target.

本发明为了在磁头10的AlTiC基底(包括64%的Al2O3和36%的TiC的“磁性读/写磁头基材”)上形成一个微纹而改进预清洗步骤。该步骤可在基本不增加处理时间的情况下利用现有设备完成,这使得本发明的工艺非常实用。本发明能够通过几个常规工艺,包括等离子蚀刻工艺和离子束蚀刻工艺来实现,下面将分别描述。The present invention modifies the precleaning step for forming a microtexture on the AlTiC substrate of head 10 ("magnetic read/write head substrate" comprising 64% Al2O3 and 36% TiC). This step can be accomplished using existing equipment with substantially no increase in processing time, which makes the process of the present invention very practical. The present invention can be realized by several conventional processes, including plasma etching process and ion beam etching process, which will be described separately below.

图3展示了一个进行等离子蚀刻工艺的设备,用于在磁性读/写磁头的基体上形成微纹。以阵列形式排列的磁头,亦称为磁条(rowbar),被固定在一个运载托盘上,所述运载托盘通过一个装/卸端口102装入所述设备中。在本发明中,使用一个机械手104把运载托盘从装/卸端口102移到所述设备的真空传送室106中。然后,所述真空传送室106被抽成具有预定压力的真空,接着,所述运载托盘被移入等离子蚀刻室108中。Figure 3 shows an apparatus for performing a plasma etching process to form microrelief on the substrate of a magnetic read/write head. The magnetic heads arranged in an array, also called rowbar, are secured on a carrier tray which is loaded into the device through a load/unload port 102 . In the present invention, a robot arm 104 is used to move the carrier pallet from the load/unload port 102 into the vacuum transfer chamber 106 of the apparatus. Then, the vacuum transfer chamber 106 is evacuated to a predetermined pressure, and then the carrier tray is moved into the plasma etching chamber 108 .

接下来进行等离子蚀刻工艺,其内装有收到的运载托盘的等离子蚀刻室108被抽真空到预定压力,一种处理气体,例如氧气或者氧气-惰性气体的混合气体,经过质量流量控制器(MFC)阀门(没有标出)被引入等离子蚀刻室108中。待处理气体引入后,等离子被点燃。有几种方式可以产生等离子。最常用的等离子就是利用射频电压产生的直接电容耦合等离子或电感耦合等离子。当然,也可以用一些新近发展的方法,例如用电子回旋共振增强微波源来产生等离子。本发明中,形成微纹的关键点在于调节基底偏压(substrate bias)。电容耦合等离子在基底上会产生自偏压,但是对于其他方法,必须在基底上施加额外的电压才能够产生基底偏压。Next, the plasma etching process is performed, and the plasma etching chamber 108 containing the received carrier tray is evacuated to a predetermined pressure, and a process gas, such as oxygen or a mixed gas of oxygen-inert gas, is passed through a mass flow controller (MFC ) valves (not shown) are introduced into the plasma etch chamber 108. After the gas to be treated is introduced, the plasma is ignited. There are several ways to generate plasma. The most commonly used plasmas are direct capacitively coupled plasmas or inductively coupled plasmas using radio frequency voltages. Of course, some newly developed methods can also be used, such as electron cyclotron resonance enhanced microwave sources to generate plasma. In the present invention, the key point of forming microgrooves is to adjust the substrate bias. Capacitively coupled plasma creates a self-bias on the substrate, but with other methods, an additional voltage must be applied across the substrate to be able to generate substrate bias.

经过预定时间后,所述等离子被关闭。时间的设置取决于在磁头上形成微纹的期望高度。After a predetermined time, the plasma is turned off. The time is set depending on the desired height of the dimples formed on the head.

接下来,运载托盘被机械手104移动到镀硅室110,在那里,磁头的基体表面上通过溅镀法(sputtering)镀上一层硅。Next, the carrier tray is moved by the manipulator 104 to the silicon coating chamber 110, where a layer of silicon is coated on the surface of the substrate of the magnetic head by sputtering.

然后,所述运载托盘被机械手104移送到a-C:H(含氢的类金刚石)或者ta-C(无氢的四面体(tetrahedral carbon)的类金刚石)镀室112中,在那里,磁头基体表面被镀上一层具有期望厚度的类金刚石碳层(DLC layer)。Then, the carrier tray is moved to a-C:H (hydrogen-containing diamond-like carbon) or ta-C (hydrogen-free tetrahedral (tetrahedral carbon) diamond-like carbon) plating chamber 112 by manipulator 104, where the magnetic head substrate surface It is coated with a diamond-like carbon layer (DLC layer) with the desired thickness.

影响等离子蚀刻工艺的关键因素包括处理气体的类型、处理室的压力、蚀刻电压和蚀刻时间。本发明用于等离子蚀刻工艺的蚀刻气体根据Al2O3和TiC的比例可为氧气、氩气或者氧气和惰性气体的混合气体。在本发明中,氧气对Al2O3的蚀刻速率较快,而对TiC的蚀刻速率则较慢。所述处理气体的流动速率通过质量流量控制器(MFC)来控制以达到期望压力,这里所述处理室的工作压力设为1.0Pa。Key factors affecting the plasma etch process include the type of process gas, process chamber pressure, etch voltage and etch time. The etching gas used in the plasma etching process of the present invention can be oxygen, argon or a mixed gas of oxygen and inert gas according to the ratio of Al 2 O 3 and TiC. In the present invention, oxygen has a faster etching rate for Al2O3 , but a slower etching rate for TiC. The flow rate of the processing gas is controlled by a mass flow controller (MFC) to achieve a desired pressure, where the working pressure of the processing chamber is set at 1.0 Pa.

用于本发明的电源可根据所述设备进行调整,其可在等离子蚀刻工艺中产生等离子并在将被处理的磁头上提供偏压。在本发明的一个实施例中,所述磁头被施加一个300V的直流自偏压。形成偏压的目的是进行氧支配的物理蚀刻。The power supply used in the present invention can be adjusted according to the equipment, which can generate the plasma during the plasma etching process and provide the bias voltage on the magnetic head to be processed. In one embodiment of the present invention, a DC self-bias of 300V is applied to the magnetic head. The purpose of forming the bias voltage is to perform oxygen-dominated physical etching.

蚀刻时间依微纹的期望台阶高度而定。通常,如果微纹的台阶高度要求为4nm左右,蚀刻时间应定为大约5分钟。The etch time depends on the desired step height of the microfemale. Generally, if the step height of the micrograin is required to be about 4nm, the etching time should be set at about 5 minutes.

作为对上述处理过程的改进,新增一个步骤:对其上已具有ABS图案(Pattern)的磁头进行处理而改变其原来的ABS表面粗糙度。这个新增的步骤在磁头被置入等离子蚀刻室108后和等离子蚀刻室108被抽真空后进行。在被抽成真空的等离子蚀刻室108中点燃等离子来蚀刻掉原始存在于磁头上的保护层(overcoat),该保护层包括硅层和碳(金刚石)层。然后,在不破坏等离子蚀刻室108的真空状态的前提下,前述处理气体被引入等离子蚀刻室108,接着用该处理气体再次蚀刻磁头。这样,在所述磁头上形成预期的微纹,其随后被镀上硅和DLC。As an improvement to the above processing procedure, a new step is added: processing the magnetic head with the ABS pattern (Pattern) on it to change its original ABS surface roughness. This additional step is performed after the magnetic head is placed in the plasma etching chamber 108 and after the plasma etching chamber 108 is evacuated. Plasma is ignited in the evacuated plasma etching chamber 108 to etch away the overcoat originally present on the magnetic head, the overcoat including the silicon layer and the carbon (diamond) layer. Then, without breaking the vacuum state of the plasma etching chamber 108, the aforementioned processing gas is introduced into the plasma etching chamber 108, and then the magnetic head is etched again with the processing gas. In this way, the desired microrelief is formed on the head, which is subsequently plated with silicon and DLC.

本发明的另一个例子是用离子束蚀刻(IBE)代替上面所说的等离子蚀刻。执行IBE工艺的设备如图4所示。用离子束蚀刻方法在磁性读/写磁头上形成微纹的过程如下:首先,将承载磁条的运载托盘置入一个真空处理室202中,并用产品保持装置204将运载托盘固定,所述产品保持装置204可在0到90度之间倾斜。然后,所述真空处理室202被抽真空至预定压力。Another example of the present invention is to use ion beam etching (IBE) instead of the above-mentioned plasma etching. The equipment for performing the IBE process is shown in Figure 4. The process of forming microgrooves on the magnetic read/write head by the ion beam etching method is as follows: first, the carrier tray carrying the magnetic stripe is placed in a vacuum processing chamber 202, and the carrier tray is fixed by the product holding device 204, and the product The holding device 204 can be tilted between 0 and 90 degrees. Then, the vacuum processing chamber 202 is evacuated to a predetermined pressure.

接下来,把处理气体,例如氧气,或者氧气和惰性气体的混合气体,引入到第一离子源206中,所述离子源206通过第一个闸门208和产品保持装置204分隔开。然后,点燃离子源206中的中和剂(neutralizer)和等离子。点燃后过一段时间,等离子就稳定下来了。Next, a process gas, such as oxygen, or a mixture of oxygen and an inert gas, is introduced into a first ion source 206 separated from the product holding device 204 by a first gate 208 . Then, a neutralizer and plasma in ion source 206 are ignited. After a while after ignition, the plasma stabilizes.

当等离子稳定后,产品保持装置204被倾斜一个预定角度,闸门208被打开,从而允许等离子轰击固定在运载托盘上的磁头以进行对磁头的预清洗。此时处理室的内部压力大约为0.03-0.05Pa。When the plasma stabilizes, the product holding device 204 is tilted at a predetermined angle, and the gate 208 is opened to allow the plasma to bombard the magnetic heads fixed on the carrier tray for pre-cleaning of the magnetic heads. At this time, the internal pressure of the processing chamber is about 0.03-0.05Pa.

在经过一段时间后,闸门208再次关闭,离子源206和中和器的电源也要关闭。所述处理室202再次被抽真空,所述运载托盘倾斜至另一个预定方向,并通过第二离子源210和硅靶材214进行处理,其中,所述第二离子源210被第二个闸门212所遮蔽,所述硅靶材214通过第三个闸门216与产品保持装置204相隔离。硅层就这样被镀在所述磁头上。After a period of time, the gate 208 is closed again, and the power of the ion source 206 and the neutralizer are also turned off. The processing chamber 202 is evacuated again, the carrier tray is tilted to another predetermined direction, and processed by the second ion source 210 and the silicon target 214, wherein the second ion source 210 is closed by the second gate 212 , the silicon target 214 is isolated from the product holding device 204 by a third gate 216 . A silicon layer is thus plated on the head.

然后,所述运载托盘被倾斜调整回到第一个离子源206的位置上,但是这次离子源206所用的源气换为C2H4,目的是镀C:H层。这一阶段所用的处理时间取决于所镀C:H层的期望厚度和沉积速率。Then, the carrier tray is tilted and adjusted back to the position of the first ion source 206, but this time the source gas used by the ion source 206 is changed to C 2 H 4 for the purpose of plating a C:H layer. The processing time used at this stage depends on the desired thickness and deposition rate of the plated C:H layer.

影响离子蚀刻方法形成微纹的关键因素包括:处理气体的类型,离子束的入射角度、蚀刻电压和蚀刻时间。本发明为了使Al2O3在TiC上有较大的选择度,在离子束蚀刻工艺中所用的处理气体是氧气、氩气或者氧气和惰性气体的混合气体。考虑到磁头的极尖凹陷,就必须调节离子束入射角度。为了适应期望的极尖形态,极尖材料和预清洗前的表面形态是调整入射角度时的重要考量因素。The key factors affecting the formation of micro-grain by ion etching method include: the type of processing gas, the incident angle of ion beam, etching voltage and etching time. In the present invention, in order to make Al 2 O 3 have greater selectivity on TiC, the processing gas used in the ion beam etching process is oxygen, argon or a mixed gas of oxygen and inert gas. Considering the pole tip recess of the magnetic head, it is necessary to adjust the ion beam incident angle. The tip material and surface morphology before pre-cleaning are important considerations when adjusting the angle of incidence in order to accommodate the desired tip morphology.

蚀刻电压可以通过一个可形成加速电场的格栅电压进行调节,射频电源(radio-frequency(RF)power)可以调节离子源中的电离比率。最优蚀刻电压由所需蚀刻量、处理时间、等离子稳定度以及静电放电损毁(electrical static charge damaging)所决定的。蚀刻时间则由微纹的期望高度和先前的能量入射角度设定所决定的。The etch voltage can be adjusted by a grid voltage that creates an accelerating electric field, and a radio-frequency (RF) power can adjust the ionization ratio in the ion source. The optimal etching voltage is determined by the required etching volume, processing time, plasma stability, and electrical static charge damage. The etch time is determined by the desired height of the microfemale and the previous energy incidence angle setting.

在本发明中,参考图5,所述AlTiC表面,经过上述处理后,形成一个具有清楚的两阶(two-step)结构的微纹,所述微纹包括TiC 51顶台阶和氧化铝52底台阶。所述微纹的高度可以用原子力显微镜(AFM)来测量,所测量的区域面积是20微米X 20微米,这里采用矫平方法(flatten method)去除了原子力显微镜悬臂弧(cantileverbow)的影响。In the present invention, with reference to Fig. 5, the AlTiC surface, after the above-mentioned treatment, forms a micrograin with a clear two-step structure, and the micrograin includes a TiC 51 top step and an aluminum oxide 52 bottom steps. The height of the micrograin can be measured with an atomic force microscope (AFM), and the measured area is 20 microns × 20 microns. The flatten method is used here to remove the influence of the cantilever arc of the atomic force microscope.

参考图5A,没有经过本发明的工艺进行处理,在AlTiC表面上就没有清楚的两阶结构。这是由于经过研磨,机械方式去除的两种硬物质:氧化铝和碳化钛有同样的去除率。而传统上应用氩气去除表面污染时,去除碳化钛上的氧化铝时只有非常小的选择度。本发明提供一种具有清晰两阶结构的微纹,清楚地显示了两种物质在高度上的不同。所述台阶高度或微纹高度依赖于处理时间。经过20秒的处理,所述微纹的台阶高度可达到2nm,参图5B;经过40秒的处理,所述微纹的台阶高度可达到3nm,参图5C;经过60秒的处理,所述微纹的台阶高度可达到4nm,参图5D。Referring to FIG. 5A, without the process of the present invention, there is no clear two-level structure on the surface of AlTiC. This is due to the fact that after grinding, two hard substances are mechanically removed: aluminum oxide and titanium carbide have the same removal rate. Traditionally, when argon is used to remove surface contamination, there is only very little selectivity when removing alumina on titanium carbide. The present invention provides a micrograin with a clear two-level structure, clearly showing the difference in height between the two substances. The step height or ridge height depends on the processing time. After 20 seconds of processing, the step height of the micro-grain can reach 2nm, see Figure 5B; after 40 seconds of processing, the step height of the micro-grain can reach 3nm, see Figure 5C; after 60 seconds of processing, the The step height of the micrograin can reach 4nm, see Figure 5D.

微纹高度会影响磁性读/写磁头的起飞(take-off)和降落(touch-down)性能。从下表中可以清楚地看到这一点。Dimple height affects the take-off and touch-down performance of a magnetic read/write head. This can be clearly seen from the table below.

  项目 project   微纹高度(nm)Micro-grain height (nm)   降落(atm.)<sup>*</sup>Landing(atm.)<sup>*</sup>   起飞(atm.)<sup>**</sup>Take off(atm.)<sup>**</sup>   1 1   <1<1   0.600.60   1.001.00   2 2   2 2   0.550.55   0.660.66   33   33   0.580.58   0.690.69   44   44   0.570.57   0.720.72

*降落(atm.):磁头可降落在磁盘上的最大压力。*Drop (atm.): The maximum pressure that the head can land on the disk.

**起飞(atm.):磁头可从磁盘上起飞的最小压力。**Takeoff (atm.): The minimum pressure at which the head can be lifted off the disk.

较低的值及降落和起飞间的不同意味着磁头拥有较好的稳定性。Lower values and the difference between landing and takeoff mean that the head has better stability.

本发明中,所述基底并不限于上述的AlTiC,两种不同材料的混合体:64%的Al2O3(氧化铝)和36%的TiC(碳化钛)。这里,Al2O3是底层物质,TiC为岛状第二相(island-like second phase)。AlTiC的颗粒尺寸为1微米左右。当AlTiC的颗粒尺寸发生变化时,本发明的微纹形成工艺会得到基本相同的效果,仅仅岛状第二相的密度有所不同,如图5E所示。In the present invention, the substrate is not limited to the aforementioned AlTiC, a mixture of two different materials: 64% Al 2 O 3 (aluminum oxide) and 36% TiC (titanium carbide). Here, Al 2 O 3 is an underlayer substance, and TiC is an island-like second phase. The grain size of AlTiC is around 1 micron. When the particle size of AlTiC is changed, the microrib formation process of the present invention can obtain basically the same effect, only the density of the island-like second phase is different, as shown in FIG. 5E .

以上所揭露的仅为本发明的优选实施例而已,当然不能以此来限定本发明之权利范围,因此依本发明申请专利范围所作的等同变化,仍属本发明所涵盖的范围。What is disclosed above is only a preferred embodiment of the present invention, and of course it cannot limit the scope of rights of the present invention. Therefore, equivalent changes made according to the patent scope of the present invention still fall within the scope of the present invention.

Claims (20)

1. a method that forms little line on air-supported of magnetic read/write magnetic head is characterized in that comprising the following steps:
(a) plural magnetic head arrays is arranged in the pallet, each magnetic head comprises a pole tip up;
(b) described pallet is packed in the process chamber, and described process chamber is pumped into the vacuum with predetermined pressure;
(c) will contain oxygen processing gas imports in the described process chamber;
(d) described magnetic head is exposed in the etching means in the described processing gas and and carries out etching and form the little line that constitutes by a plurality of tangible two stage structures thereon its surface.
2. method according to claim 1 is characterized in that: also comprise the step of grinding described head surface before in step (a).
3. method according to claim 1 is characterized in that: also comprise the step that shields described magnetic head pole tip with the photoresist cover before in step (c).
4. method according to claim 1 is characterized in that: the roughness of described head surface after grinding is 0.2-04nm.
5. method according to claim 3 is characterized in that: described photoresist cover can be positive polarity photoresist cover or negative polarity photoresist cover.
6. method according to claim 3 is characterized in that: the thickness of described photoresist cover is between 1-20 μ m.
7. method according to claim 1 is characterized in that also being included in the step that described head surface forms air-supported pattern before in step (a), and the step of removing protective seam in step (b) afterwards.
8. method according to claim 1 is characterized in that: described etching means comprise plasma or ion beam.
9. method according to claim 8 is characterized in that: described plasma is
Direct capacitance coupled plasma or inductively coupled plasma.
10. method according to claim 8 is characterized in that: described plasma strengthens microwave source by electron cyclotron resonance and produces.
11. method according to claim 1 is characterized in that: described processing gas is purity oxygen.
12. method according to claim 1 is characterized in that: described processing gas is the mixed gas of oxygen and at least a inert gas.
13. method according to claim 1 is characterized in that: the height on described rank is from the 10-50 dust, and the distance on described adjacent rank is 0.2 μ m-3 μ m.
14. a formation has the method for the magnetic read/write magnetic head of little line, it is characterized in that comprising the following steps:
(a) plural magnetic head arrays is placed pallet, described each magnetic head all has a pole tip up;
(b) described pallet is inserted in the process chamber, and described process chamber is pumped into the vacuum with predetermined pressure;
(c) will contain oxygen processing gas imports in the described process chamber;
(d) described magnetic head is exposed in the etching means in the described processing gas and and carries out etching and form the little line that constitutes by a plurality of tangible two stage structures thereon its surface.
(e) applying silicon layer on etched surfaces; With
(f) coating diamond-like carbon-coating on described silicon layer.
15. a magnetic read/write magnetic head comprises air-supported with protective seam, it is characterized in that this protective seam has the little line that is made of a plurality of tangible two stage structures.
16. magnetic read/write magnetic head according to claim 15, it is characterized in that: described air-supported face is made with AlTiC, it comprises alumina base phase and microgranular titanium carbide second phase of implanting described alumina base phase, described titanium carbide protrudes from described alumina base phase mutually, thereby forms a step of top clearly that is different from the base frame rank of being defined mutually by described alumina base.
17. magnetic read/write magnetic head according to claim 15 is characterized in that: the height of described top step from the base frame rank is between the 10-50 dust.
18. magnetic read/write magnetic head according to claim 15 is characterized in that: the distance between the described adjacent protrusion top step is between the 0.2 μ m-3 μ m.
19. magnetic read/write magnetic head according to claim 15 is characterized in that: described protective seam comprises class diamond carbon-coating and is clipped in silicon layer between such diamond carbon-coating and the head surface.
20. magnetic read/write magnetic head according to claim 15 is characterized in that: described two stage structures are by forming with engraving method in containing oxygen processing gas.
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CN1232995A (en) * 1998-04-23 1999-10-27 阿尔卑斯电气株式会社 Image forming method
CN1543666A (en) * 2001-08-20 2004-11-03 ���������ƴ���ʽ���� dry developing method

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