CN1923342B - Scrubber for processing semiconductor waste gas - Google Patents

Abstract

Disclosed is a scrubber for processing semiconductor waste gas produced in a semiconductor fabricating process, wherein the scrubber burns the waste gas with a flame of a high temperature, filters and captures particles produced after the waste gas is burnt, and discharges particle-filtered waste gas to the atmosphere. The semiconductor waste gas processing scrubber includes: a supply section forsupplying semiconductor waste gas, fuel and oxygen; a burner connected to the supply section so as to burn the semiconductor waste gas by flame; a burning chamber joined to the burner so as to cause particles, which are produced as the semiconductor waste gas is burnt, to drop; a wet tower installed at a side of the burning chamber so as to cause the particles, which are transferred from the burning chamber after adsorbing the particles using water, to drop; and a water reservoir tank connected to the burning chamber and the wet tower so as to capture the particles which have dropped from theburning chamber and the wet tower.

Description

Scrubber for treating semiconductor waste gas

Cross References to Related Applications

This application claims Korean Patent Applications 2005-0081838 filed on September 2, 2005, 2005-0082274 filed on September 5, 2005, 2006-0011011 filed on February 6, 2006, Priority of 2006-0011012 filed February 6, 2006 and 2006-0011013 filed February 6, 2006, the entire contents of which applications are incorporated herein by reference.

technical field

The present invention relates to a scrubber (scrubber) (hereinafter referred to as "semiconductor waste gas treatment scrubber") for treating waste gas originating from a semiconductor process, and in particular to a semiconductor waste gas treatment scrubber, It uses a high-temperature flame to combust exhaust gases from semiconductor processes, uses water to filter and collect the burnt gases, and then vents the filtered and collected gases to the atmosphere.

Background technique

Generally, various reactive gases used for forming a thin film on a wafer or etching a wafer in a semiconductor manufacturing process contain oxide components, phosphide components, toxic components, and the like. Therefore, if such reactive gas (hereinafter referred to as "exhaust gas") is discharged into the atmosphere intact after use, it is not only harmful to the human body but also causes environmental pollution. Accordingly, scrubbers are provided in semiconductor facilities to discharge the exhaust gases after removing oxide components, phosphide components, toxic components, and the like.

Semiconductor waste gas treatment scrubbers used to remove waste gas in the semiconductor manufacturing process are divided into three categories: 1) Indirect combustion wet scrubbers, which burn waste gas and then filter the waste gas again with water, where the scrubber is also called "thermal wet scrubber". 2) wet scrubber, which uses water to collect waste gas and then purifies the water, wherein the scrubber is also called "wet scrubber"; and 3) direct combustion wet scrubber, which uses A high temperature flame is used to combust the exhaust gas and then water is used to collect the gas, where this scrubber is also known as a "combustion wet scrubber".

The semiconductor waste gases here are mainly silicon-containing gases, which generate a large amount of particulates when treated by thermal wet scrubbers or combustion wet scrubbers. An example of a chemical reaction formula can be expressed as:

SiH ₄ (gas)+2O ₂ →SiO ₂ (particles)+2H ₂ O

Similarly, if such semiconductor off-gas is burned, a large amount of particulates is generated. Therefore, if water is used to filter and collect particulates, the concentration of harmful components present in semiconductor waste gas can be significantly reduced.

However, the conventional semiconductor waste gas treatment scrubber as described above has various problems as described below.

First, a problem with conventional scrubbers is that the burners used in such scrubbers are not efficient in burning the semiconductor waste gas, so the semiconductor waste gas cannot be completely burned. That is, there is a problem that the burner is supplied with fuel and oxygen and semiconductor exhaust gas, wherein since the exhaust gas, fuel and oxygen are supplied in such a manner that they flow parallel to each other, they do not mix with each other rapidly, and therefore, the burner burns Low efficiency in terms of semiconductor exhaust.

Second, the particles produced after the combustion of semiconductor waste gas are gradually thickened and deposited on the inner wall of the combustion chamber due to suction and friction, and solidify as time goes by. Therefore, there is an inconvenience that the entire inner wall of the combustion chamber must be manually cleaned after a predetermined period of time has elapsed. Typically, the interior walls of such combustion chambers tend to need cleaning every three to four days.

Third, in order to clean the combustion chamber as described above, it is necessary to completely separate the combustion chamber from the housing of the scrubber. However, in the conventional semiconductor exhaust gas treatment scrubber, since the combustion chamber is fixed by a plurality of bolts and nuts, it takes a very long time to separate and connect such a combustion chamber.

Fourth, a wet scrubber or a combustion wet scrubber as described above may include a wet tower for injecting a predetermined amount of water. In addition to spraying water, such wet towers are often provided with multiple filters to filter and remove particulates. However, such scrubbers are not efficient because such wet towers are intended to be used continuously without changing their assembled condition, even if they are assembled without taking into account various process conditions and installation situations. Furthermore, with such traditional wet towers, when cleaning the interior of the wet tower, it may sometimes be sufficient to clean a specific area. In this case, however, the entire wet tower also needs to be dismantled, so it also takes a considerable amount of time to clean certain areas.

Fifth, the wet scrubber or combustion wet scrubber as described above may include a water storage tank containing a predetermined amount of water therein. Such a water storage tank is used to collect in water the particles formed when the semiconductor waste gas is burned by the flame of the burner. Of course, such particles and water may be discharged to the outside at predetermined time intervals, and fresh water may be supplied into the water storage tank. However, as time goes by, the particles collected in the water of the water storage tank as described above settle due to the action of gravity and accumulate on the bottom of the water storage tank. Since they accumulate thicker due to gravity as time goes by, the particles adhere to the bottom of the water storage tank due to their own weight, and therefore, even if the water is drained, the particles are not discharged to the outside. Accordingly, there is a problem in the prior art that the water storage tank must be disassembled and cleaned every predetermined time, which is very laborious and time-consuming.

Contents of the invention

Therefore, the present invention has been made in order to solve the above-mentioned problems occurring in the prior art, and an object of the present invention is to provide a semiconductor waste gas treatment scrubber, which has a burner whose efficiency in burning semiconductor waste gas is improved. .

In a further embodiment of the invention, there is also provided a semiconductor waste gas treatment scrubber, which has a combustion chamber, and a pulse wave is provided to the inner wall of the combustion chamber by a predetermined pressure, so that particles will not be deposited in the combustion chamber on the inner wall.

In a further embodiment of the invention there is also provided a semiconductor waste gas treatment scrubber, wherein the combustion chamber is adapted to be easily detached, and the chamber support part is provided below the combustion chamber so that the combustion chamber can be easily attached and detached, The combustion chamber can thus be easily maintained and repaired.

In a further embodiment of the invention, there is also provided a semiconductor waste gas treatment scrubber, which has a wet tower, wherein the connection state between the upper and lower parts of the wet tower can be changed arbitrarily according to the semiconductor manufacturing process and exhaust conditions .

In a further embodiment of the invention, there is also provided a semiconductor waste gas treatment scrubber, which has a water storage tank for collecting particles from the semiconductor waste gas, wherein bubbles are periodically generated in the water, so that the particles collected in the Particles in the water will not stick to the bottom of the storage tank.

In order to achieve the above object, the present invention provides a scrubber for treating semiconductor waste gas, which includes: a supply part for supplying semiconductor waste gas, fuel and oxygen; a burner connected to the supply part While the semiconductor waste gas is burned by flame; a combustion chamber, which is combined with the burner so that particles generated when the semiconductor waste gas is combusted, falls; a wet tower, which is installed on the side of the combustion chamber to causing the particles passed over from the combustion chamber to fall after being adsorbed by water; and a water storage tank connected to the combustion chamber and the wet tower to collect the particles falling from the combustion chamber and the wet tower particle. Wherein, the burner includes: a main body having at least one semiconductor exhaust gas supply passage, at least one fuel supply passage and at least one oxygen supply passage; a fuel nozzle body fitted on the periphery of the main body to form a fuel space and a fuel nozzle; and an oxygen nozzle body fitted on peripheries of the main body and the fuel nozzle body so as to form an oxygen supply space and an oxygen supply nozzle; and an assembly body fitted on the main body and the oxygen nozzle On the periphery of the body, thereby forming a coolant flow space, the assembly is connected to the combustion chamber.

The present invention may further include a chamber support portion provided below a lower end of the combustion chamber to support the combustion chamber.

The supply part may include: at least one exhaust gas supply pipe connected to the burner to supply the semiconductor exhaust gas to the burner; at least one bypass exhaust gas supply pipe connected to the exhaust gas supply pipe to provide the semiconductor exhaust gas a bypass; at least one fuel supply pipe connected to the burner to supply fuel to the burner; and at least one oxygen supply pipe connected to the burner to supply oxygen to the burner.

The main body may include: an extension portion extending horizontally and radially outward for a predetermined length approximately from a lower end of the main body, and having at least one groove formed on an outer peripheral surface; an upper first flange extending horizontally and radially outwardly from the main body by a length greater than the extension length of the extension; and a second flange above the first flange , the second flange extends horizontally and radially outward from the body by a length greater than the extension length of the first flange; and wherein at least one semiconductor waste gas supply channel extends substantially vertically through the body, The at least one fuel supply channel extends through the body such that an outlet of the fuel supply channel is formed between the extension and the first flange, and the at least one oxygen supply channel extends through the body , so that the outlet of the oxygen supply channel is formed between the first flange and the second flange.

The groove formed on the main body may be inclined in such a manner that an imaginary extension line of a lower end thereof intersects a central axis of the main body, and wherein the main body is in close contact with the fuel nozzle body, whereby the groove forms a fuel nozzle, And the fuel nozzle body closely contacts the extension portion and the first flange, thereby forming a fuel space between the main body and the fuel nozzle body.

The fuel nozzle body may include: a central hole formed through a central portion of the fuel nozzle body into which the main body fits; and an extension portion formed around a lower end of a peripheral surface of the fuel nozzle body and along radially extending a predetermined length, wherein at least one groove is formed on an outer peripheral surface of the extending portion.

The fuel nozzle body is in intimate contact with the oxygen nozzle body such that the at least one groove on the extension of the fuel nozzle body forms at least one oxygen nozzle, and the oxygen nozzle body is in contact with the second protrusion of the body. flange and the extended portion of the fuel nozzle body, thereby forming one or more oxygen nozzles between the first flange and the second flange and between the fuel nozzle body and the oxygen nozzle body space.

The oxygen nozzle body may include: a central hole formed through a central portion of the oxygen nozzle body into which the fuel nozzle body fits; and an extension portion surrounding a lower end of an outer peripheral surface of the oxygen nozzle body. formed and extended radially outward for a predetermined length.

The assembly may include a central hole formed through a central portion of the assembly, the oxygen nozzle body is fitted into the hole, and the outer peripheral surface of the oxygen nozzle body and the assembly body A coolant flow space is formed between the inner peripheral surfaces, and a coolant pipe is connected to the coolant flow space.

The main body may have an inverted tapered surface whose apex forms a lower end of the main body, and a blocking wall extending downward by a predetermined length around the tapered surface.

The combustion chamber may include: a top cover into which the burner is fitted; an inner chamber suspended from a bottom side of the top cover around the burner; An outer chamber suspended from the underside of the top cover.

A cooling pipe may be provided in a space between the top cover and the outer chamber to supply coolant, and at least one through hole may be formed in the cooling pipe so that the coolant is injected into the space between the inner chamber and the outer chamber. in the space.

The inner chamber may include an upper inner chamber and a lower inner chamber, the upper inner chamber and the lower inner chamber may be detached from each other, and the outer chamber may also include an upper outer chamber and a lower outer chamber, the upper outer chamber and the lower outer chamber Can be taken apart from each other.

The combustion chamber may include: a pilot burner at the lower end of the burner passing through the outer chamber and the inner chamber to achieve initial ignition; and passing through the outer chamber and the inner chamber at the A UV sensor at the lower end of the burner to detect if initial ignition has been successfully achieved.

The combustion chamber may further include a part for supplying a gas for removing particles, the part for supplying gas for removing particles supplies gas having a predetermined pressure so that the particles do not accumulate on an inner wall of the combustion chamber.

The part supplying the gas for removing particles may include: a gas supply pipe coupled to the outside of the combustion chamber ceiling; a gas pipe connected to the gas supply pipe, and the gas pipe runs along the ceiling and the inner chamber. a space therebetween is formed in an annular shape; and at least one gas nozzle coupled to the gas pipe and extending a predetermined length in the inner chamber.

The gas nozzle may include a straight portion extending parallel to the inner wall of the combustion chamber and a bent portion bent from an end portion of the straight portion toward the inner wall of the combustion chamber so that the gas may supply momentum to the inner wall of the combustion chamber.

There may be four gas nozzles arranged centered on the center of the inner chamber and spaced apart from each other at an angular interval of 90 degrees.

The gas nozzles can be inclined with respect to the vertical direction of the inner chamber, so that, in the inner chamber, the gas can be supplied in a swirling manner.

The gas supplied through the part supplying the gas for removing particles may be an inert gas.

The gas supplied through the part supplying the gas for removing particles may be supplied in pulses.

A substantially funnel-shaped lower chamber is detachably attached to a lower portion of the combustion outer chamber, and a particle guide member is incorporated in the interior of the lower chamber, the particle guide member being funnel-shaped to divert the exhaust gas after combustion. The generated fines are directed to the wet tower and tank.

The particle guide member may further include an inert gas pipe for injecting inert gas, thereby preventing vapor generated in the water storage tank from being introduced into the combustion chamber.

The lower chamber may be provided with a chamber support portion for supporting the combustion chamber and allowing the combustion chamber to be separated.

The chamber support part may include: a pair of guide rails linearly installed on the support plate; a pair of guide blocks installed on the guide rails to reciprocate in a horizontal direction; a pair of guide blocks installed on the guide blocks and extending upward a predetermined distance of support platforms each having a horizontal surface formed on the top of the support platform and a descending surface extending downward from the horizontal surface at a predetermined angle; and one or more of the support platforms mutually The supporting rods connected together, the lower chamber is provided with rolling bodies, and these rolling bodies are installed to slide along the horizontal surface or descending surface of the supporting table.

The wet tower may include: a cylindrical base tower having a base nozzle; a cylindrical first tower removably mounted on top of the base tower, in which a first filter is arranged and a first nozzle; a cylindrical second tower removably mounted on top of said first tower, in which a second filter and a second nozzle are disposed; removably mounted on a cylindrical third tower at the top of the second tower, in which a third filter and a third nozzle are arranged; and a cylinder removably mounted on the top of the third tower A fourth column in the form of a gas supply pipe and a plurality of impingement plates are arranged in the fourth column, wherein the first column and the second column can be assembled in different orders, and the third column and the fourth column It can also be assembled in a different order.

The height and diameter of the first tower and the second tower may be the same as each other, and the height and diameter of the third tower and the fourth tower are the same as each other, and the diameter of the first tower and the second tower Different from the diameter of the third and fourth towers.

The porosity of the first filter, the second filter and the third filter gradually decreases in the order of the first filter, the second filter to the third filter.

Fresh water may be supplied through the base nozzle, and water purified by the water storage tank may be supplied through the first, second and third nozzles.

A cover with an open top may be fitted on the top of the fourth column, a first discharge pipe having a pressure detection port, a temperature detection port, and a cooling air supply port is connected to the cover, and a second discharge pipe is connected to the first discharge pipe. The top end of a discharge pipe, the second discharge pipe has a discharge volume control member, so that the discharge volume can be controlled.

The base tower can be connected to the combustion chamber and the water storage tank through an intermediate connecting pipe and a lower connecting pipe, and the base nozzle is arranged to spray water upwards toward the first filter installed in the first tower.

The base tower may also include a pressure detection port for detecting the pressure in the base tower.

The first nozzle of the first tower may be positioned above the first filter in such a way that water can be sprayed downward toward the first filter.

The first column may further include a transparent first window formed in a wall of the first column so that the first filter located within the first column may be visually seen.

The second nozzle of the second tower may be positioned above the second filter in such a way that water can be sprayed downward toward the second filter.

The second column may further include a transparent second window formed in a wall of the second column so that the second filter located within the second column may be visually seen.

The third nozzle of the third tower may be disposed above the third filter in such a manner that water may be sprayed downward toward the third filter.

The impingement plates of the fourth tower may be formed to each have a plurality of through holes, and the impingement plates are stacked to be spaced apart from each other in the vertical direction, the through holes formed in two adjacent impingement plates are staggered from each other, The gas supply pipe is instead arranged above the impingement plate in such a way that the inert gas can be supplied downwards towards the impingement plate.

The water storage tank may include: a first area assembled under the combustion chamber and wet tower to collect water and particles falling from the combustion chamber and wet tower; a second area where the second A zone is separated from the first zone by a partition and is supplied with water from which particles have been filtered from the first zone; and, the partition is provided with a filter portion to filter the particles from the water.

A discharge pump may in turn be connected to the first area for discharging the water together with the particles to the outside.

The discharge pump may have: a fluid inlet and a fluid outlet for sucking and discharging water and particulates; an air inlet and an air outlet for supplying air pressure to the discharge pump to operate the discharge pump; and at least one air bubble generator, The bubble generator is connected to the air outlet through a tube and immersed into the water in the first area of the water storage tank to a predetermined depth.

The discharge pump may be a pneumatic diaphragm pump.

The air bubble generator may be a noise damper for reducing noise of the discharge pump.

The air bubble generator can generate air bubbles in the water of the water storage tank every time air is discharged from the discharge pump, so that particles collected in the water continuously float in the water without depositing or accumulating at the bottom of the water storage tank superior.

The inlet of the circulation pump may be connected to the second area of the water storage tank, and the outlet of the circulation pump may be connected to the wet tower through a heat exchanger.

Description of drawings

The above and other objects, features and advantages of the present invention will become more apparent through the following detailed description, in conjunction with the accompanying drawings, wherein:

Fig. 1 is the perspective view showing the main structure of the semiconductor waste gas treatment scrubber of the present invention;

2a to 2c are front views, left views and right views showing the semiconductor waste gas treatment scrubber of the present invention in a sectional manner;

Fig. 3 is the front view showing the appearance of the semiconductor waste gas treatment scrubber of the present invention;

Fig. 4 is the left side view that has shown the interconnected state of the semiconductor waste gas treatment scrubber of the present invention in a sectional manner;

5a and 5b are a front view and a left side view showing the supply portion of the semiconductor waste gas treatment scrubber of the present invention in a sectional manner;

6a and 6b are front views showing the burner of the semiconductor waste gas treatment scrubber of the present invention in a sectional manner;

Figure 7a is an exploded sectional view of the burner of the semiconductor waste gas treatment scrubber of the present invention, Figure 7b is an enlarged view of part 7b in Figure 7a, and Figure 7c is an enlarged view of part 7c in Figure 7a;

Fig. 8 is the bottom view of the burner of the semiconductor waste gas treatment scrubber of the present invention;

9a to 9c are a front view, a top view and a bottom view showing the combustion chamber of the semiconductor waste gas treatment scrubber of the present invention in a sectional manner;

Figures 10a and 10b are left and right views showing the combustion chamber of the semiconductor waste gas treatment scrubber in a sectional manner;

Fig. 11a is a right side view showing the combustion chamber of the semiconductor waste gas treatment scrubber of the present invention in a sectional manner, and Fig. 11b is a sectional view of the combustion chamber;

Fig. 12a is a left side view of a lower chamber and a chamber supporting part, wherein the lower chamber is combined to the lower end of the semiconductor waste gas treatment scrubber of the present invention, and Fig. 12b is a partial sectional right side view showing the lower chamber and a chamber supporting part;

Figures 13a and 13b are a front view and a right side view showing the wet tower of the semiconductor waste gas treatment scrubber of the present invention in a sectional manner;

Figures 14a and 14b are cross-sectional views along line 14a-14a and line 14b-14b in Figure 13b, respectively, and Figure 14c is a perspective view of region 1550 in Figure 13b;

15a to 15d are top views, left views, front views and right views showing the water storage tank 1600 of the semiconductor waste gas treatment scrubber 1000 of the present invention in a sectional manner; and

16 is a side view showing a circulation pump and a heat exchanger for purifying and supplying water from a water storage tank of the semiconductor waste gas treatment scrubber of the present invention to a wet tower.

Detailed ways

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the following description and drawings, the same reference numerals are used to designate the same or similar components, so that repeated descriptions of the same or similar components will be omitted.

FIG. 1 is a perspective view showing the main configuration of a semiconductor waste gas treatment scrubber 1000 of the present invention.

As shown in the figure, the semiconductor waste gas treatment scrubber 1000 of the present invention includes: a supply part 1100 for supplying semiconductor waste gas, fuel and oxygen; a burner 1200 connected to the supply part 1100 to burn the semiconductor waste gas with a flame; Combustion chamber 1300, which is connected to the burner 1200 so that particles or the like generated during the combustion of semiconductor waste gas fall; chamber support part 1400, which is provided under the combustion chamber 1300 to support the combustion chamber 1300; wet tower 1500, It is installed on the side of the combustion chamber 1300 to discharge the filtered gas to the atmosphere, while using water to absorb and drop particles or the like delivered from the combustion chamber 1300; and a water storage tank 1600, which is combined with the combustion chamber Chamber 1300 and wet tower 1500 to collect and discharge particles or the like falling from combustion chamber 1300 and wet tower 1500 using water contained therein.

Here, the combustion chamber 1300 and the wet tower 1500 may be connected to each other through intermediate connecting pipes 1353 and 1513 . In addition, the combustion chamber 1300 and the water storage tank 1600 may be connected to each other through an intermediate connection pipe 1353 and a lower connection pipe 1354 , and the wet tower 1500 and the water storage tank 1600 may be connected to each other through another lower connection pipe 1514 .

2a to 2c are a front view, a left view and a right view showing the semiconductor waste gas treatment scrubber 1000 of the present invention in a sectional manner.

As shown, the supply part 1100 is used to supply semiconductor waste gas, fuel and oxygen to the burner 1200 . Such a supply part 1100 includes a plurality of exhaust gas supply pipes 1111 , a plurality of bypass exhaust gas supply pipes 1112 , at least one fuel supply pipe 1115 , and at least one oxygen supply pipe 1112 . In the drawings, reference numeral 1113 denotes a three-way valve, and reference numeral 1114 denotes a sensor unit. The provisioning section 1100 will be described in more detail below.

The burner 1200 serves to properly mix the semiconductor off-gas, fuel, and oxygen supplied from the supply part 1100 while generating a flame, thereby burning the off-gas to generate particles. Such a burner 1200 includes: a main body (not shown), through which semiconductor exhaust, fuel and oxygen pass; a fuel nozzle body (not shown), which serves as a fuel nozzle; an oxygen nozzle body (not shown), which uses as an oxygen supply nozzle; and an assembly (not shown), which contains a coolant and allows the burner 1200 to be fixed to the combustion chamber 1300 . Such a combustor 1200 will be described in more detail below.

The combustor 1300 prevents the heat of the combustor 1200 from flowing out to the outside, and guides particles, residual gas or the like generated by the combustor to the wet tower 1500 at the side of the combustor 1300 or the water storage tank below the combustor 1300 . Such a combustion chamber 1300 includes: a top cover 1310 to which the burner 1200 is coupled; an inner chamber 1320 extending downward by a predetermined length from the bottom side of the top cover 1310 and the periphery of the burner 1200; and an outer chamber 1330 , which extend a predetermined length from the bottom of the top cover 1310 and surround the outer peripheral edge of the inner chamber 1320 . In addition, a part 1360 for supplying a gas for removing particles is also provided in the combustion chamber 1300 for supplying a gas for removing particles, thereby preventing particles generated by the flame of the burner 1200 from being deposited on the inner wall. The combustion chamber 1300 and the portion 1360 supplying gas for removing particulates will be described in more detail below.

The chamber support part 1400 is installed under the combustion chamber 1300 and serves to upwardly support the combustion chamber 1300 under the combustion chamber 1300 . As described below, the combustion chamber 1300 can be easily removed when the chamber support portion 1400 is moved laterally. This will be described in more detail below.

The wet tower 1500 is used to filter and collect particles and the like transferred from the combustion chamber 1300 using water, send them to the water storage tank 1600 located under the wet tower 1500, and discharge filtered clean gas to the outside. Such a wet column 1500 includes a base column 1510 , a first column 1520 , a second column 1530 , a third column 1540 and a fourth column 1550 . Such a wet tower 1500 will be described in more detail below.

Here, the combustion chamber 1300 and the wet tower 1500 are connected to each other through the intermediate connecting pipes 1353 and 1513 as described above. In addition, the combustion chamber 1300 is connected to a water storage tank 1600 located below the combustion chamber 1300 through an intermediate connection pipe 1353 and a lower connection pipe 1354 . In addition, the wet tower 1500 is connected to a water storage tank through a lower connection pipe 1514 .

The water storage tank 1600 is used to collect particles and the like falling from the combustion chamber 1300 and the wet tower 1500 using water. In addition, the wet tower 1600 is used to send collected fine particles to the outside or to purify water and send it to the wet tower 1500 . Such a water storage tank 1600 comprises a first region 1613 connected to the combustion chamber 1300 and wet tower 1500, a second region 1614 for receiving only clean water by separating particles from the first region 1613 (see FIG. 2b ), and A filter part 1617 for filtering water is provided between the first area 1613 and the second area 1614 . Here, the first area 1613 is provided with a bubble generator 1630 for generating bubbles every predetermined time, thereby preventing the accumulation of particles. In addition, a discharge pump 1620 is provided for operating the bubble generator 1630 and discharging particles and water from the first area 1613 . In addition, the second area 1614 is provided with a circulation pump 1640 for pumping the water filtered through the second area 1614 and delivering it to the wet tower 1500 (see Figure 2b), and the second area 1614 is also provided with a pump for water treatment. Cooled heat exchanger 1650 (see Figure 2c). Such a water storage tank 1600 will be described in more detail below.

In the drawings, reference numeral 1701 designates a housing forming the appearance of the scrubber 1000 of the present invention, 1702 designates an operation panel, and 1703 designates casters.

FIG. 3 is a front view showing the appearance of the semiconductor waste gas treatment scrubber 1000 of the present invention.

The above-mentioned supply part, burner, combustion chamber, chamber support part, wet tower, and water storage tank may all be installed in a substantially square housing 1701 . In addition, an operation panel 1702 may be provided at the front of the housing 1701 to control various components. In addition, a plurality of casters 1703 may be installed under the housing 1701 .

FIG. 4 is a left side view showing a state in which semiconductor waste gas treatment scrubbers 1000 and 2000 of the present invention are connected to each other.

As shown in the figure, semiconductor waste gas treatment scrubbers 1000 and 2000 of the present invention may be connected to each other. That is, the sensor unit 1114 provided in one scrubber 1000 may be connected with the sensor unit 1114 provided in another scrubber 2000 through the connection pipe 1704 . Therefore, if the semiconductor waste gas is not supplied to the one scrubber 1000 smoothly, the corresponding sensor 1114 measures this situation and makes the waste gas be delivered to the other scrubber 2000 through the connecting pipe 1704. In the drawings, reference numeral 1112 designates a semiconductor exhaust gas supply pipe, and reference numeral 1113 designates a three-way valve.

5a and 5b are a front view and a left side view showing the supply part 1100 of the semiconductor waste gas treatment scrubber 1000 of the present invention in a cross-sectional manner.

As shown in the figure, the supply part 1100 includes an exhaust gas supply pipe 1111, a bypass exhaust gas supply pipe 1112, a fuel supply pipe 1115, an oxygen supply pipe 1116, a three-way valve 1113 and a sensor unit 1114. The exhaust gas supply pipe 1111 is connected to the burner 1200 to supply the semiconductor exhaust gas to the burner 1200 . The bypass exhaust gas supply pipes 1112 are respectively connected to the exhaust gas supply pipes 1111 for sending the exhaust gas overflowing from the exhaust gas supply pipes 1111 to another device or a scrubber. The fuel supply pipe 1115 is connected to the burner 1200 to supply fuel (such as liquefied natural gas, liquefied petroleum gas, etc.) to the burner 1200 . An oxygen supply pipe 1116 is connected to the burner 1200 to supply, for example, air to the burner 1200 . A three-way valve 1113 is connected between the exhaust gas supply pipe 1111 and the bypass exhaust gas supply pipe 1112 to determine the supply direction of the exhaust gas. In addition, the sensor unit 1114 detects the amount of supplied exhaust gas as described above, and judges whether to transmit the exhaust gas to another scrubber.

6a and 6b are different front views showing the burner 1200 of the semiconductor waste gas treatment scrubber 1000 of the present invention.

In addition, Fig. 7a is an exploded cross-sectional view of the burner 1200 of the semiconductor waste gas treatment scrubber 1000 of the present invention, Fig. 7b is an enlarged view of part 7b in Fig. 7a, and Fig. 7c is an enlarged view of part 7c in Fig. 7a.

In addition, FIG. 8 is a bottom view of the burner 1200 of the semiconductor waste gas treatment scrubber 1000 of the present invention.

First, as shown in FIGS. 6 a and 6 b , the combustor 1200 includes a main body 1210 , a fuel nozzle body 1220 , an oxygen nozzle body 1230 and an assembly body 1240 .

The main body 1210 is formed with at least one exhaust gas supply channel 1112 connected to a semiconductor exhaust gas supply pipe (not shown), wherein the exhaust gas supply channel 1112 is formed to extend from the top of the main body 1210 to the bottom of the main body 1210 so as to be supplied through the supply channel. Semiconductor exhaust. In addition, the main body 1210 is formed with a fuel supply passage 1212 for supplying fuel, which is connected to the fuel supply pipe 1115 of the supply part 1100, wherein the fuel supply passage 1212 extends downward from the top of the main body 1210 through the main body 1210, It is then bent toward the side of the main body 1210 where the outlet of the fuel supply passage is formed. In addition, the main body 1210 is formed with an oxygen supply passage 1213 connected to the oxygen supply pipe 1116 of the supply part 1100, wherein the oxygen supply passage 1213 extends downward from the top of the main body 1210 and then toward the main body 1210 relative to the fuel supply passage. The opposite side portion of , at which the outlet of the oxygen supply channel 1213 is formed, is bent. In FIG. 6 a , G refers to exhaust gas supplied through the exhaust gas supply passage 1211 , F refers to fuel supplied through the fuel supply passage 1212 , and O refers to oxygen supplied through the oxygen supply passage 1213 .

Next, referring to FIG. 7a, the main body 1210 is formed with an inverted tapered surface 1214 whose apex protrudes downwardly from the main body 1210, and a blocking wall 1215 is formed around the tapered surface 1214 extending a predetermined length. In addition, an extension portion 1216 is also formed around the outer peripheral edge of the blocking wall 1215 and extends radially outward from the outer peripheral edge of the blocking wall 1215 for a predetermined horizontal length, wherein the extending portion 1216 is formed on the outer peripheral surface thereof. There are one or more grooves 1216a (see FIG. 7b). Above the extension portion 1216, a first flange 1217 with a stepped portion 1217a is formed around the outer peripheral surface of the main body 1210, and the first flange 1217 extends radially outward from the outer peripheral surface of the main body 1210 longer than the extension portion 1216. The horizontal length of the horizontal length. Above the first flange 1217, a second flange 1218 is formed around the outer peripheral surface of the main body 1210, and the second flange 1218 extends radially outward from the outer peripheral surface of the main body 1210 to a level greater than that of the first flange 1217. The horizontal length of the length, wherein the second flange 1218 is formed with a concave portion 1281a having a predetermined depth.

Here, the fuel supply passage 1212 extends downward through the main body 1210 from the top of the main body 1210 and then bends toward the side of the main body 1210 so that the outlet 1212a of the fuel supply passage 1212 is formed between the extension portion 1216 and the first flange 1217 . In addition, the oxygen supply passage 1213 extends downward through the main body 1210 from the top of the main body 1210, and then bends toward the side of the main body 1210, so that the outlet 1213a of the oxygen supply passage 1213 is formed between the first flange 1217 and the second flange 1218. between.

The groove 1216a formed on the extension portion 1216 of the main body 1210 is inclined at a predetermined angle (for example, 15 degrees) (see FIG. 7b ) so that a virtual line extending from a lower end thereof intersects the center line of the main body 1210 . In addition, the extension portion 1216 is in intimate contact with the fuel nozzle body 1220 such that the groove 1216a forms the fuel nozzle 1216b (see FIG. FIG. 6 b ), thereby forming a fuel space 1216 c between the main body 1210 and the fuel nozzle body 1220 . Here, the top end of the fuel nozzle body 1220 is engaged with the stepped portion 1217 a of the first flange 1217 .

As shown in FIG. 7a, the fuel nozzle body 1220 is formed with a central hole 1221 extending through its central portion so that the main body 1210 fits into the central hole 1221. The fuel nozzle body 1220 is also formed with an extension 1222. The extension 122 Formed around the lower end of the peripheral surface of the fuel nozzle body 1220 and extending radially outward from the lower end of the peripheral surface of the fuel nozzle body 1220 for a predetermined horizontal length, wherein one or more grooves are formed on the peripheral surface of the extension portion 1222 1222a. The groove 1222a (see FIG. 7c ) formed on the extension portion 1222 of the fuel nozzle body 1220 is inclined at an angle (eg, 30 degrees) greater than the angle of the groove 1216a formed on the extension portion 1216 of the main body 1210 . In addition, the central hole 1221 of the fuel nozzle body 1220 is formed with an inclined surface 1223 disposed to abut against the extension portion 1216 of the main body 1210 so as to cover the groove 1216 a of the main body 1210 . With the inclined surface 1223 of the fuel nozzle body 1220 in close contact with the extension 1222 of the oxygen nozzle body 1230 (see FIG. 6b ), the oxygen nozzle 1222b is formed by the groove 1222a, The flange 1218 and the extension portion 1222 of the fuel nozzle body 1220 are in close contact (see FIG. 6b ), and the oxygen space 1222c is defined by the first flange 1217 , the second flange 1218 , the fuel nozzle body 1220 and the oxygen nozzle body 1230 . Here, the top end of the oxygen nozzle body 1230 is engaged with the concave portion 1218 a of the second flange 1218 .

As shown in Figure 7a, the oxygen nozzle body 1230 has a central hole 1231 through the central portion of the oxygen nozzle body 1230, so that the fuel nozzle body 1220 can fit into the central hole 1231, and the oxygen nozzle body 1230 also has an extension portion 1232, The extension portion 1232 is formed around the lower end of the oxygen nozzle body 1230 and extends radially outward from the lower end of the oxygen nozzle body 1230 by a predetermined horizontal length, wherein a stepped portion 1233 is formed on the extension portion 1232 . Here, the central hole 1231 of the oxygen nozzle body 1230 is also formed with an inclined surface 1234 disposed so as to be able to abut against the extension portion 1222 of the fuel nozzle body 1220 .

As shown in Figure 7a, the assembled body 1240 has a central hole 1241 passing through the central part of the assembled body 1240, so that the oxygen nozzle body 1230 can fit into the central hole 1241, and the assembled body 1240 also has an extension part 1242, and the extended part 1242 It is formed around the top end of the assembly body 1240 and extends radially outward from the top end of the assembly body 1240 by a predetermined horizontal length. As shown in FIG. 6 b , the assembly 1240 is engaged with the stepped portion 1233 of the oxygen nozzle body 1230 at its lower end, and a coolant flow space 1235 is formed between the oxygen nozzle body 1230 and the assembly 1240 . Of course, the coolant pipe 1236 is connected to the coolant flow space 1235 .

Meanwhile, as shown in FIG. 8, the fuel nozzles 1216b are generally arranged in an annular array, and each fuel nozzle is generally formed in a concave form shape. In addition, as shown in FIG. 8, the oxygen nozzles 1222b are also generally arranged in an annular array, and each oxygen nozzle is generally formed in a concave form. Of course, the oxygen nozzles 1222b are disposed outboard of the fuel nozzles 1216b.

As described above, fuel nozzles 1216b and oxygen nozzles 1222b are inclined at a predetermined angle and are oriented substantially toward the center of the lower end of combustor 1200 . That is, the angle of inclination of the oxygen nozzles 1222b is greater than the angle of inclination of the fuel nozzles 1216b and is oriented toward the central axis of the combustor 1200 . Therefore, fuel and oxygen jetted from the nozzles 1216b and 1222b can be conveniently mixed in the vicinity of the nozzles 1216b and 1222b, and a funnel-shaped flame converging at the center of the lower end of the burner 1200 can be formed.

In addition, since the barrier wall is formed substantially at the lower end of the burner 1200, it is possible to separate the mixed gas of fuel and oxygen from the semiconductor off-gas. This prevents dilution of the mixed gas of fuel and oxygen caused by mixing the mixed gas with exhaust gas containing a large amount of inert gas (nitrogen), so that the root position of the flame can be stabilized.

In addition, according to the burner 1200 of the present invention, an inverted tapered surface 1214 is formed at the lower portion of the main body 1210 to delay mutual mixing of exhaust gas flows. This is set in consideration of delaying the interaction with the exhaust gas flows of the adjacent exhaust gas supply channels 1211 , which can be realized by making the positions of the outlet ends of the exhaust gas supply channels 1211 spatially different from each other.

Thus, the combustion efficiency of the burner 1200 is improved since the mixing of fuel and oxygen is surely achieved through the funnel-shaped flame. Furthermore, since the mixed gas of fuel and oxygen and the exhaust gas are separated from each other by the barrier wall 1215 provided near the flame formation position, the root position of the flame can be stably maintained. In addition, since the central lower portion of the burner 1200 is formed in the shape of a funnel to delay mutual mixing of exhaust gas flows, combustion efficiency is improved.

9a to 9c are front view, top view and bottom view showing the combustion chamber 1300 of the semiconductor waste gas treatment scrubber 1000 of the present invention in a sectional manner.

As shown, the combustor 1300 includes: a top cover 1310, in the center of which the burner 1200 is assembled; an inner chamber 1320, which is suspended from the bottom side of the top cover 1310 around the burner 1200; An inner chamber 1320 is suspended from the bottom side of the top cover 1310 ; and a lower chamber (not shown) is connected to a lower portion of the outer chamber 1330 . The lower chamber will be described in detail below. The inner chamber 1320 includes an upper inner chamber 1321 and a lower inner chamber 1322 . In addition, the outer chamber 1330 also includes an upper outer chamber 1331 and a lower outer chamber 1332 . The upper inner chamber 1321 and the lower inner chamber 1322 are detachably engaged with each other. The upper outer chamber 1331 and the lower outer chamber 1332 are also detachably engaged with each other.

The burner 1200 configured as described above is substantially coupled to the central portion of the top cover 1310 . In addition, the upper inner chamber 1321 of the inner chamber 1320 is joined to the bottom side of the top cover 1310 around the outer peripheral edge of the burner 1200, and the lower inner chamber 1322 is joined to the lower end of the upper inner chamber 1321. The upper outer chamber 1331 of the outer chamber 1330 is coupled to the bottom side of the top cover 1310 around the outer peripheral edge of the inner chamber 1320 , and the lower outer chamber 1332 is coupled to the lower end of the upper outer chamber 1331 . Additionally, a plurality of anchor members 1346 are engaged between lower inner chamber 1322 and lower outer chamber 1332, thereby anchoring the two chambers to each other. With this configuration, the present invention allows the lower inner chamber 1322 and the lower outer chamber 1332 to be easily separated from the upper inner chamber 1321 and the upper outer chamber 1331 together.

Here, a sealing ring 1341 is further provided between the top cover 1310 and the upper inner chamber 1321 of the inner chamber 1320 , wherein at least one rubber ring 1342 is engaged with the inner surface of the sealing ring 1341 and is in close contact with the top cover 1310 . The upper inner chamber 1321 is secured to the top cover 1310 by bolts and nuts that extend through the seal ring 1341 and the top cover 1310 . In addition, a cooling pipe 1343 is coupled between the top cover 1310 and the upper outer chamber 1331 of the outer chamber 1330 through which coolant is supplied so that the combustion chamber 1300 will not be overheated during the operation of the burner 1200 . Of course, the cooling pipe 1343 is formed with one or more through holes 1343a for injecting coolant. An igniter 1344 and an ultraviolet (UV) sensor 1345 are installed through the upper outer chamber 1331 and the upper inner chamber 1321, respectively. Pilot 1344 is used to achieve initial ignition of burner 1200, while UV sensor 1345 is used to detect whether ignition is properly achieved. Of course, if the UV sensor 1345 determines that ignition has been achieved, the igniter 1344 is deactivated. The above-mentioned water storage tank 1600 is connected to the lower end of the combustion chamber 1300 through a structure, which will be described in detail below.

Meanwhile, the combustion chamber 1300 is also provided with a part 1360 for supplying gas for removing particles, and the part 1360 for supplying gas for removing particles includes a gas supply pipe 1361, a gas pipe 1362 connected to the gas supply pipe 1361, and at least one The gas nozzle 1363 connected to the gas tube 1362 .

The gas supply pipe 1361 is combined with the top cover 1310 of the combustion chamber 1300 and extends through the sealing ring 1341 provided between the top cover 1310 and the upper inner chamber 1321 .

In addition, the cross section of the gas pipe 1362 is substantially square, and the gas pipe 1362 is disposed between the sealing ring 1341 and the upper inner chamber 1321 .

The gas nozzle 1363 connected to the gas pipe 1362 extends downward in the upper inner chamber 1321 by a predetermined length. More specifically, the gas nozzle 1363 includes a straight portion 1363a extending parallel to the inner wall of the combustion chamber 1300 and a bent portion 1363b bent from an end of the straight portion 1363a toward the inner wall of the combustion chamber 1300 . Four gas nozzles 1363 may be provided, and the four gas nozzles are roughly arranged around the center of the combustion chamber 1300, and the angular interval between two adjacent gas nozzles 1363 is 90 degrees. Of course, the number of gas nozzles 1363 is just an example, and the present invention is not limited to the number of gas nozzles 1363 described. In addition, the gas nozzle 1363 may be disposed at an angle or obliquely with respect to the vertical direction of the combustion chamber 1300, so that the gas may be supplied in a swirling manner within the combustion chamber 1300 (ie, the upper inner chamber 1321 and the lower inner chamber 1322). .

Preferably, an inert gas that does not react with semiconductor off-gas may be used as the gas supplied to the inside of the inner chamber 1320 through the part 1360 supplying a gas for removing particles. More preferably, nitrogen, which is most commonly used in semiconductor manufacturing processes, may be used as the gas, but the present invention is not limited to such a gas.

Preferably, the gas supplied to the interior of the inner chamber 1320 by the part 1360 supplying the gas for removing particles is supplied substantially in pulses. This is because, if the gas is supplied in pulses, the impulse force transmitted to the inner wall of the inner chamber 1320 is greater than the impulse force transmitted to the inner wall when the gas is supplied continuously at a fixed flow rate. By the impulse force transmitted to the inner wall of the inner chamber 1320, the particles that will be deposited or have been deposited on the inner wall of the inner chamber 1320 are separated or detached from the inner wall to freely fall. In Fig. 9a, the microparticles are designated with the reference P.

More specifically, the pressure of the inert gas supplied through the part 1360 supplying the gas for removing particles preferably ranges from 1 kgf/cm ² to 10 kgf/cm ² . That is, through a comprehensive study on the degree of particle deposition or removal and the stability of the device, which was conducted by changing the pressure of the inert gas, it was found that if the pressure of the inert gas is not more than 1 kgf/cm ² , although The stability of the device is very good but the fine particles are relatively easy to deposit or difficult to remove; whereas if the pressure of the inert gas is not less than 10 kgf/cm ² , the device stability is impaired although the fine particles are difficult to deposit or easy to remove. Here, the stability of the device means that the performance of the device will not be affected by the phenomenon of reduced suction efficiency of semiconductor waste gas, fuel, oxygen, etc. due to positive pressure due to the supply of inert gas. produce. Of course, the interior of the combustion chamber 1300 is usually under negative pressure.

In practice, the gas supplied through the part 1360 for supplying the gas for removing particulates may be supplied in slightly different forms depending on the type and amount of the semiconductor waste gas which is passed through the waste gas supply pipe 1111 and the burner 1200. into the combustion chamber 1300.

For example, if exhaust gas containing a large amount of silicon is introduced, a large amount of fine particles will be generated. Therefore, it is advantageous to supply the inert gas in pulses throughout the operation of the burner 1200 so that particles do not deposit on the inner walls of the inner chamber 1320 .

Furthermore, if the amount of silicon contained in the introduced exhaust gas is small, fewer particulates are generated. It is therefore advantageous to supply the inert gas only intermittently in pulses for a predetermined duration. That is, even if the inert gas for removing particles is not supplied all the time during the entire operation of the burner 1200, but is only supplied for a period of time at predetermined intervals, it is possible to easily remove the particles that have been deposited on the inner wall of the inner chamber 1320. particles on.

Occasionally, the inert gas may be supplied only after the particles are deposited and accumulated on the inner wall of the combustion chamber 1300 beyond a predetermined thickness. That is, only when the pressure of the combustion chamber 1300 is lower than the pressure close to the atmospheric pressure, the inert gas is supplied to the combustion chamber 1300 for a certain period of time so that particles that have been deposited on the inner wall can be removed. Of course, a pressure sensor (not shown) may be installed in the inner chamber 1320 to detect the pressure in the combustion chamber 1300 , especially the pressure in the inner chamber 1320 .

In FIG. 9b, reference numeral "h" designates a lifting handle, which is installed on the lower outer chamber 1332 so that the user can pull the lower outer chamber 1332 and the lower inner chamber 1322 to the outside together. In addition, reference numeral 'f' designates a frame installed in the exhaust gas treatment device to support the combustion chamber 1300, and 'b' designates a bracket for coupling the combustion chamber 1300 to the frame.

10a and 10b are left and right views showing the combustion chamber 1300 of the semiconductor waste gas treatment scrubber 1000 in a cross-sectional manner.

As shown in the figure, according to the present invention, at least one lifting handle h is provided on the front side of the lower outer chamber 1332 of the outer chamber 1330, and the igniter 1344 and the ultraviolet sensor 1345 are arranged through the upper outer chamber 1331 and the upper inner chamber 1321. Of course, the burner 1200 is incorporated approximately at the center of the top cover 1310 . Since the other components have already been described in connection with FIGS. 9 a to 9 c , no further explanation is given.

Fig. 11a and Fig. 11b are respectively a right side view and a cross-sectional view in a cross-sectional manner, showing the combustion chamber 1300 of the scrubber 1000 for treating semiconductor waste gas according to the present invention.

As shown, according to the present invention, the pilot burner 1344 and the ultraviolet sensor 1345 are installed through the upper outer chamber 1331 and the upper inner chamber 1321, and the burner 1200 is installed approximately at the center of the top cover. Additionally, anchoring members 1346 extend from lower outer chamber 1332 in lower outer chamber 1332 , wherein lower inner chamber 1322 is coupled to anchoring members 1346 . Since the other components have already been described in connection with FIGS. 10 a and 10 b , no further explanation will be given.

With the above configuration, the combustion chamber 1300 and the part 1360 supplying the gas for removing particulates of the semiconductor waste gas treatment scrubber 1000 of the present invention operate as follows.

First, fuel and oxygen are respectively supplied from the fuel supply pipe 1115 and the oxygen supply pipe 1116, which are connected to the burner 1200, and then, the pilot burner 1344 operates so that the gas generated from the burner 1200 flame. The ultraviolet sensor 1345 detects the ignition state of the burner 1200, and after the burner 1200 surely achieves ignition, the pilot burner 1344 stops working.

Then, the semiconductor off-gas is supplied from the semiconductor manufacturing process line through the off-gas supply pipe 1111 connected to the burner 1200 . Exhaust gas is introduced into the inner chamber 1320 of the combustion chamber 1300 through the burner 1200 . The exhaust gas introduced into the inner chamber 1320 is burned by the flame from the burner 1200, thereby forming a certain amount of fine particles.

Here, the coolant is supplied through the cooling pipe 1343 installed in the outer chamber 1330 and the top cover 1310, so that the coolant flows along the outer wall 1610 of the inner chamber 1320, whereby the inner chamber 1320 is not heated above a predetermined temperature. level.

During this operation, the part 1360 of the present invention supplying gas for removing particles also works. That is, an inert gas such as nitrogen gas is supplied through the gas supply pipe 1361 and then supplied into the inner chamber 1320 through the gas pipe 1362 and the gas nozzle 1363 .

Each nozzle 1363 includes a straight portion 1363a and a curved portion 1363b, wherein the tip of the curved portion 1363b is oriented towards the inner wall of the inner chamber 1320, so that the inert gas from the gas nozzle 1363 blows directly to the inner wall of the inner chamber 1320 superior. That is, a predetermined degree of impulse is transmitted to the inner wall of the inner chamber 1320 . Accordingly, particles that are to be deposited or have been deposited on the inner wall of the inner chamber 1320 are separated and removed from the inner chamber 1320 and fall down.

In addition, since four gas nozzles 1363 are arranged at equal intervals from each other centering on the center of the inner chamber 1320 and inclined at a predetermined angle with respect to the vertical direction of the inner chamber 1320, the inert gas passes through the The gas nozzles 1363 are supplied into the inner chamber 1320 in a swirling manner. Therefore, particles that have been deposited on the inner wall of the inner chamber 1320 are more effectively removed and allowed to fall.

As described above, the inert gas supplied to the inside of the inner chamber 1320 through the part 1360 supplying the gas for removing particles is supplied in pulses. Therefore, due to the inert gas in the form of pulses, impulsive force is more effectively applied to the inner wall of the inner chamber 1320, whereby particles that are to be deposited or have been deposited on the inner wall are smoothly removed to fall freely.

Similarly, if exhaust gas containing a large amount of silicon is introduced, the inert gas supplied through the part 1360 supplying gas for removing particles may be continuously supplied. That is, since a large amount of particles are generated when the exhaust gas containing a large amount of silicon is burned by the burner 1200, the inert gas is continuously supplied during the operation of the burner 1200. Of course, the inert gas is also supplied in pulses in this case.

In addition, if the exhaust gas containing a small amount of silicon is introduced, the inert gas supplied through the part 1360 supplying the gas for removing particles may be intermittently supplied for a predetermined period of time. That is, since a small amount of particulates are generated during the combustion of the exhaust gas containing a small amount of silicon by the burner 1200, the particulates on the inner wall of the inner chamber 1320 can be effectively removed even by supplying an inert gas for a predetermined period of time. , without continuously supplying the inert gas during the operation of the burner 1200 . Of course, the inert gas is also supplied in pulses in this case.

Also, after the pressure in the inner chamber 1320 has been detected, if the pressure in the inner chamber 1320 is substantially close to the atmospheric pressure, the inert gas supplied through the part 1360 supplying the gas for removing particles may be supplied. The state where the pressure in the inner chamber 1320 is substantially close to the atmospheric pressure means that the inner volume of the inner chamber has been reduced due to the deposition and accumulation of particles on the inner wall beyond a predetermined thickness. Accordingly, it is necessary to remove particles that have been deposited on the inner wall of the inner chamber 1320 by supplying an inert gas into the inner chamber 1320 in a pulsed form.

Figures 12a and 12b are a left side view and a partially cutaway right side view showing the chamber support portion 1400 and the lower chamber 1350 incorporated into the lower end of the semiconductor waste gas treatment scrubber 1000 of the present invention.

As shown in the figure, according to the present invention, a lower chamber 1350 substantially formed in the form of a funnel is installed in a lower portion of an outer chamber of a combustion chamber in a detachable manner from the outer chamber, and a particle guide member 1351 is installed in the lower chamber 1350 , wherein the particle guide member 1351 is approximately funnel-shaped to guide the particles generated during the combustion of the exhaust gas to the wet tower 1500 and the water storage tank 1600 .

Here, the particle guide member 1351 is provided with an inert gas tube for injecting inert gas so as to prevent steam from being reintroduced from the water storage tank 1600 into the combustion chamber 1300 . In addition, an intermediate connection pipe 1353 is connected to the lower end of the lower chamber 1350 . Therefore, the particles fall toward the water storage tank 1600 through the intermediate connection pipe 1353 after passing through the particle guide member 1351 .

In addition, a chamber support part 1400 is fixed to the lower chamber 1350 so as to detachably support the combustion chamber 1300 .

The chamber supporting part 1400 includes: a pair of guide rails 1420, which are installed linearly on the support plate 1410; a pair of guide blocks 1430, which are installed on the guide rails 1420 and can reciprocate along the horizontal direction; several support platforms 1440, each supporting The tables each have a horizontal surface 1441 formed at the top thereof and a descending surface 1442 extending downward at a predetermined angle from the horizontal surface; and one or more support rods 1450 connecting the support tables 1440 to each other. In addition, the lower chamber 1350 is provided with rolling bodies 1355 connected to be slidable along the horizontal surface 1441 and the descending surface 1442 .

Therefore, if the operator pulls the support rod 1450 of the chamber supporting part 1400 to the side, the rolling body 1355 of the lower chamber 1350 slides along the horizontal surface 1441 and then along the descending surface 1442, so that the lower chamber 1350 can be lifted from the combustion chamber 1300. The lower part is easily separated.

From this state, the lower inner chamber 1322 and the lower outer chamber 1332 can be separated from the upper inner chamber 1321 and the upper outer chamber 1331 together. Therefore, an operator can quickly and easily clean the interior of the combustion chamber 1300 .

13a and 13b are a front view and a right side view showing the wet tower 1500 of the semiconductor waste gas treatment scrubber 1000 of the present invention in a sectional manner.

As shown, the wet tower 1500 includes a base tower 1510 , a first tower 1520 , a second tower 1530 , a third tower 1540 and a fourth tower 1550 . According to the present invention, the first tower 1520, the second tower 1530, the third tower 1540, and the fourth tower 1550 may be detachably assembled to each other in different orders.

That is, according to the present invention, the height and diameter of the first tower 1520 and the second tower 1530 may be exactly the same as each other. In addition, the height and diameter of the third tower 1540 and the fourth tower 1550 may be exactly the same as each other. Accordingly, the first tower 1520 and the second tower 1530 may be assembled or installed with interchanged positions. In addition, the third tower 1540 and the fourth tower 1550 may also be assembled or installed with interchanged positions.

Therefore, because the first column 1520 and the second column 1530 can be installed interchangeably, and the third column 1540 and the fourth column 1550 can be installed interchangeably, according to the present invention, the wet column 1500 can be operated in different forms, which can be Varies depending on semiconductor manufacturing process and mounting conditions. Thus, one or more desired columns can be selected and separated from wet column 1500, whereby one or more desired columns can be selectively cleaned, thereby greatly reducing maintenance and repair costs. The length of time required.

The first filter 1521 is assembled on the first tower 1520, the second filter 1531 is assembled on the second tower 1530, and the third filter 1541 is assembled on the third tower 1540, and the first filter to the third filter The porosity is set to be different from each other. Specifically, from the first filter 1521 , the second filter 1531 to the third filter 1541 , the porosity is adapted to decrease sequentially. Thus, according to the present invention, particles can be filtered through three stages. By means of the base nozzle 1511 arranged in the base tower 1510, the first nozzle 1522 arranged in the first tower 1520, the second nozzle 1532 arranged in the second tower 1530, and the third nozzle 1532 arranged in the third tower 1540 The filtered particles of the water sprayed from the nozzle 1542 fall into the water storage tank 1600 , so that the filtered particles are then collected in the water in the water storage tank 1600 .

Meanwhile, fresh water is supplied from the outside through the base nozzle 1511 , and purified water from the water storage tank 1600 is supplied through the first nozzle 1522 , the second nozzle 1532 , and the third nozzle 1542 . For this, a water supply pump (not shown) is connected to the base nozzle 1511 to supply fresh water, a filtering part (not shown) is provided in the water storage tank, and a circulation pump (not shown) is connected to the first, The second and third nozzles 1522, 1532 and 1542 are used to supply water from the water storage tank. Since a drain pump (not shown) is connected to the water storage tank, even if fresh water is continuously supplied by the water supply pump, the water in the water storage tank will not overflow.

A top-opened cover 1560 is coupled to the top of the fourth tower 1550, and a first discharge pipe 1561 having a cooling air supply port 1562, a pressure detection port 1563, and a temperature detection port 1564 is connected to the cover 1560. . Here, cooling air having a lower temperature is supplied through the air supply port 1562, thereby causing fine particles to fall toward the fourth tower 1550, if present. The pressure of the discharged gas is detected through the pressure detection port 1563 , and the temperature of the gas is detected through the temperature detection port 1564 . If the pressure and temperature detected through the pressure detection port 1563 and the temperature detection port 1564 are not within the reference range, it will warn the user through the warning device or stop the operation of the device.

A second discharge pipe 1655 provided with a discharge amount control member 1566 is connected to the top end of the first discharge pipe 1561 to control the discharge amount. With the help of such a discharge amount control member 1566, the amount of purified gas can be correctly controlled according to the amount of exhaust gas particles actually generated.

Now, the configurations of the base tower 1510, the first tower 1520, the second tower 1530, the third tower 1540, and the fourth tower 1550 will be described in detail.

As shown in the figure, the base tower 1510 is roughly cylindrical in shape, and is connected to the combustion chamber 1300 and the water storage tank 1600 through an intermediate connecting pipe 1512 and a lower connecting pipe 1513 respectively. In addition, the base nozzle 1511 provided in the base tower 1510 is configured to spray water toward the first filter 1521 provided in the first tower 1520 . Here, a pressure detection port 1515 is additionally formed in the base column 1510 to detect the internal pressure of the base column 1510 . Therefore, according to the present invention, if the pressure value obtained from the pressure port 1514 provided in the base tower 1510 and the pressure port 1563 provided in the first discharge pipe 1561 is not within the reference range, a warning device (not shown) Warn the user or stop operation of the device.

Then, the first tower 1520 has a substantially cylindrical shape and is installed on top of the base tower 1510 . In addition, the first nozzle 1522 of the first tower 1520 is configured to spray water downwardly above the first filter 1521 . Thus, all particles deposited or accumulated on the first filter 1521 fall through the base nozzle 1511 located below the first filter 1521 and the first nozzle 1522 located above the first filter 1521 . Here, a first transparent window 1523 may be additionally provided on the wall of the first tower 1520 so that the first filter 1521 can be visually seen. Therefore, through the first transparent window 1523, the state of the first filter 1521 can be visually seen, so that the cleaning time of the first filter 1521 can be accurately judged.

The second tower 1530 is also roughly cylindrical in shape and installed above the first tower 1520 . In addition, the second nozzle 1532 of the second tower 1530 is configured to spray water downwardly above the second filter 1531 . Here, a second transparent window 1533 may be additionally provided on the wall of the second tower 1530 so that the second filter 1531 can be visually seen. Therefore, according to the present invention, the cleaning time of the second filter can be accurately judged.

The third tower 1540 is also roughly cylindrical in shape and installed above the second tower 1530 . In addition, the third nozzle 1542 of the third tower 1540 is configured to spray water downwardly above the third filter 1541 .

The fourth tower 1550 is also roughly cylindrical in shape and installed above the third tower 1540 . Furthermore, in the fourth tower 1550, a plurality of impact plates 1551 each formed with a plurality of through holes 1552 is provided in such a manner that the impact plates are vertically spaced apart from each other. , wherein the through-holes 1552 formed on one strike plate 1551 are staggered relative to the through-holes formed on the adjacent strike plate 1551 . The impingement plates 1551 are stacked on top of each other and anchored by a plurality of bolts 1554, spacers 1555 and nuts to form a unitary structure. Therefore, according to the present invention, even though the particles pass through the first filter 1521 , the second filter 1531 and the third filter 1541 , the particles still collide with the impact plate 1551 and are finally filtered out. In addition, a gas supply pipe 1553 is provided to supply an inert gas such as nitrogen gas downwardly above the impingement plate. If the internal pressure of the wet tower 1500 of the present invention increases (that is, a large amount of particles are adsorbed on the filter or impingement plate), a predetermined amount of inert gas is supplied through the gas supply pipe 1553 so that all the particles adsorbed on the filter 1521, Particles on both 1531 and 1541 and impact plate 1551 can be removed. That is, the gas supplied from the gas supply pipe 1553 is used to provide a certain degree of impulse to the filters 1521, 1531, and 1541 and the impingement plate 1551, thereby separating particles from the filters and the impingement plate.

Figures 14a and 14b are cross-sectional views along lines 14a-14a and 14b-14b in Figure 13b, respectively, and Figure 14c is a perspective view of region 1550 in Figure 13b.

As shown in FIG. 14 a , the base nozzles 1511 may be intersected in the base tower 1510 . Spraying through holes 1511a are formed at the center and four ends of the base nozzle 1511, so that water may be sprayed upward from the lower portion of the base tower 1510 through a total of five through holes 1511a. However, the present invention is not limited to the arrangement of such base nozzles 1511 and the number of spray through holes 1511 a formed in the base nozzles 1511 .

As shown in FIG. 14b, in the second tower 1530, the second nozzle 1532 may be arranged in an "H" shape. Spraying through holes 1532 a are formed at the center and four ends of the second nozzle 1532 , so that water may be sprayed onto the second filter 1531 located below the second nozzle 1532 through a total of five spraying through holes 1532 a. However, the present invention is not limited to the arrangement of such second nozzles 1532 and the number of spray through holes 1532 a formed in the second nozzles 1532 .

As shown in FIG. 14 c , impingement plates 1551 are arranged in the fourth tower 1550 , wherein each impingement plate 1551 is formed with a plurality of through holes 1552 , and the diameter of each through hole 1552 is relatively large. Since the through-holes 1552 formed in one impingement plate 1551 are staggered with respect to the through-holes formed in adjacent impingement plates 1551, as described above, particles hit each impingement plate when falling through the through-holes 1552. 1551 on.

With the above configuration, the wet tower 1500 of the present invention operates as follows.

First, exhaust gas generated from a semiconductor processing line is burned in the combustion chamber 1300 by the flame of the burner 1200 to generate particles, and among the generated particles, relatively heavy particles are directly dropped to the water storage tank 1600 . In addition, relatively light particles move toward the base column 1510 of the wet column 1500 through the intermediate connecting pipe 1512 .

Thereafter, while ascending to the first tower 1520 , the fine particles pass through the first filter 1521 installed in the first tower 1520 . At the same time, all particles larger than the pores of the first filter are retained by the first filter 1521 . The fine particles trapped in this way pass through the lower connection pipe 1513 installed below the base tower 1510 under the action of water sprayed from the base nozzle 1511 and the first nozzle (which are respectively provided below and above the first filter 1521 ). Drop into the water storage tank respectively.

Then, the particles that have passed through the first filter 1521 of the first tower 1520 try to pass through the second filter 1531 installed in the second tower 1530 . At this time, all particles larger than the pores of the second filter 1531 are retained by the second filter 1531 . The fine particles trapped in this way fall under the second filter 1531 by the water sprayed from the second nozzle 1532 which is disposed above the second filter 1531 . Thus, the dropped particles fall into the water storage tank 1600 through the first filter 1521 and the lower connecting pipe 1513 .

Then, the particles that have passed through the second filter 1531 of the second tower 1530 try to pass through the third filter 1541 installed in the third tower 1540 . At this time, all particles larger than the pores of the third filter 1541 are trapped. The fine particles trapped in this way fall under the third filter 1541 by the water sprayed from the third nozzle 1542 which is disposed above the third filter 1541 . Thus, the dropped particles fall into the water storage tank 1600 through the second filter 1531 , the first filter 1521 and the lower connecting pipe 1513 .

Then, the particles having passed through the third filter 1541 of the third tower 1540 pass through the through hole 1552 of the impingement plate 1551 installed in the fourth tower 1550 . At this time, most of the particles directly collide with the impact plate 1551 and fall down instead of rising. In addition, an inert gas such as nitrogen gas is supplied downward from above the impingement plate 1551 through the gas supply pipe 1553, thereby removing particles from the impingement plate 1551, and the particles removed in this way are thus passed through the third filter 1541, the second The second filter 1531 and the lower connecting pipe 1513 are dropped into the water storage tank 1600 .

Thus, the gas passing through the base tower 1510, the first tower 1520, the second tower 1530, the third tower 1540, and the fourth tower 1550 is a purified gas in which substantially all particles are removed. Finally, when the purified gas passes through the first discharge pipe 1561 , the purified gas is cooled by the cool air supplied through the cooling air supply port 1562 and then descends to the impingement plate 1551 . Thus, the exhaust gas discharged to the outside through the first discharge pipe 1561 and the second discharge pipe 1562 is substantially completely purified without any particles.

As described above, the base tower 1510 and the first discharge pipe 1561 are formed with the pressure detection ports 1514 and 1563, respectively. Therefore, the difference between the gas pressure passing through the base column 1510 and the gas pressure passing through the first discharge pipe 1561 can be determined. If the pressure difference between the gas passing through the base tower 1510 and the gas passing through the first discharge pipe 1561 is too large, it means that a large amount of particles are deposited or accumulated in the first filter 1521, the second filter 1531, the third filter on the device 1541 and the impact plate 1551. Correspondingly, this condition is reported to the user by a warning device (not shown) or the operation of the device is stopped.

When such a warning device is activated, an inert gas of a predetermined pressure is supplied through a gas supply pipe 1553 provided in the fourth tower 1550, so that the impulse generated by the inert gas is adapted to be transmitted to the impact plate 1551, the third filter 1541, the on the second filter 1531 as well as on the first filter 1521, thereby removing particles from the impingement plate and the filter.

Although the gas is supplied through the gas supply pipe 1553, if the pressure difference between the upper and lower parts is still too large, it means separating and cleaning at least The time for one of these is approaching. This condition is reported to the user by a warning device (not shown) or operation of the device is stopped.

15a to 15d are top view, left view, front view and right view showing the water storage tank 1600 of the semiconductor waste gas treatment scrubber 1000 of the present invention in a sectional manner.

As shown in the figure, the water storage tank 1600 includes: a peripheral wall 1610, the cross-sectional shape of the peripheral wall 1610 is approximately square; a bottom wall 1611, used to close the bottom side of the peripheral wall; and a top cover 1612, used to close the top of the peripheral wall 1610 side. That is to say, the water storage tank 1600 is generally in the form of a hollow cuboid and accommodates a certain amount of water.

In addition, the water storage tank 1600 also includes: a first area 1613, the combustion chamber 1300 and the wet tower 1500 are connected to it through the lower connecting pipes 1354 and 1514 respectively; an open second region 1614; and a filter portion 1617 fitted in the opening 1616. The lower connection pipes 1354 and 1514 communicate with the top cover 1612 of the water storage tank 1600 and are immersed into the water in the water storage tank 1600 to a predetermined depth.

In addition, a discharge pump 1620 is provided at the top of the rear area of the top cover 1612 of the water storage tank 1600 . The discharge pump 1620 has a fluid inlet 1612 and a fluid outlet 1623 so that water and particles can be pumped together. In addition, the discharge pump 1620 is also provided with an air inlet 1624 and an air outlet 1625 so that air pressure may be supplied to or exhausted from the discharge pump 1620 to operate the discharge pump 1620 . Here, a fluid inlet 1612 is formed at the rear top of the discharge pump 1620 . An inlet tube 1622 is connected to the fluid inlet 1612 , wherein the inlet tube 1622 extends to the bottom of the water storage tank 1600 and sits on the first area 1613 so that it can draw water and particulates from the water storage tank 1600 . In addition, since the fluid outlet 1623 is formed substantially at the top end of the discharge pump 1620, particles and water may be completely discharged to the outside. Although not shown in the drawings, an outlet tube is connected to the fluid outlet 1623 . In the drawings, reference numeral "a" designates air and "w+p" designates water and particulates.

Meanwhile, an air inlet 1624 is formed at the front of the discharge pump 1620 , and an air supply pipe (not shown) previously provided in the semiconductor pipeline is connected to the air inlet 1624 . In addition, an air outlet 1625 is formed at a rear side lower end of the discharge pump 1620, and a bubble generator 1630 is connected to the air outlet 1625 through a tube 1625a. The bubble generator 1630 is located in the first area of the water storage tank 1600 . Of course, the bubble generator 1630 extends through the top cover 1612 and is immersed into the water in the water storage tank 1600 to a predetermined depth.

With the above-mentioned structure, the air wasted during the operation of the discharge pump 1620 is transmitted to the air bubble generator 1630 through the air outlet 1625 and the pipe 1625a, so that a predetermined degree of impulsive force is periodically transmitted to the air in the first region 1613 of the water storage tank 1600. in the air. Therefore, particles intended to settle and deposit in the first region 1613 are always floating in the water. Thus, when the discharge pump 1620 is operated, the particles floating in this manner are easily discharged outside together with water along the inlet pipe 1622 , the fluid inlet 1621 , and the fluid outlet 1623 . That is, the particles do not settle and settle too thickly on the bottom of the water storage tank 1600 . Here, the bubble generator 1630 is preferably, but not exclusively, constituted by a noise damper or the like that can reduce noise from the discharge pump 1620 and deliver a predetermined degree of impulse force into the water. Although the figures show only one bubble generator 1630 coupled to the top cover 1612, preferably at least three bubble generators are provided, connected to the top cover 1612 corresponding to the first region 1613 and spaced apart from said top cover 1612 , so that precipitation and deposition of particles can be prevented in the entire first region 1613 of the water storage tank 1600 .

Meanwhile, the partition 1615 that divides the water storage tank 1600 into the first area 1613 and the second area 1614 is also provided with a filter portion 1617 that is rectangular and has a filter on each side thereof when viewed from a plan view. . Therefore, when the water in the first area 1613 flows toward the second area 1614 , the water flows after the particles are filtered through the filtering part 1617 . Correspondingly, the water in the first zone 1613 is turbid because it contains particles, while the water in the second zone 1614 is cleaner because the particles have been filtered out.

Since the first zone 1613 contains particles and water, the combustion chamber 1300 is connected to the first zone 1613 through the lower connecting pipe 1354 , and the wet tower is connected to the first zone 1613 through another connecting pipe 1514 . In addition, the air bubble generator 1630 connected to the air outlet 1625 of the discharge pump 1620 and the inlet pipe 1622 are also disposed in the first region 1613 for the above-mentioned reason.

A sodium hydroxide inlet 1618 is formed in the top cover 1612 corresponding to the second region 1614 of the water storage tank 1600 . In addition, a pH value sensor is connected to the side of the sodium hydroxide inlet 1618 for detecting the pH value of the water in the water storage tank 1600 . In the drawings, only one sensor bracket 1619 for attaching a pH sensor is shown. Typically, after being collected in water, particulates from the combustion of semiconductor off-gases increase the acidity of the water. That is, the particulates acidify the water. Thus, as described above, the acidity of the water is measured by the pH sensor, and an amount of sodium hydroxide is placed into the water through the sodium hydroxide inlet 1618 . Therefore, the water in the water storage tank 1600 is always kept in a neutral state. Thereby, various structures assembled in the water storage tank 1600 can be prevented from being corroded by water.

The circulation pump 1640 is connected to the rear side wall 1600 of the water storage tank 1600 . Such a circulation pump 1640 also has an inlet 1641 and an outlet 1642 . The inlet 1641 of the circulation pump 1640 is also connected to the outer wall 1610 corresponding to the second area of the water storage tank 1600 . In addition, an outlet 1642 of the circulation pump 1640 is connected to a heat exchanger 1650 . Therefore, the temperature of the water in the water storage tank increases due to the water used to cool the combustion chamber 1300 or particles passing through the combustion chamber 1300 , wherein the water is cooled by the circulation pump 1640 and the heat exchanger 1650 . In addition, the water passing through the heat exchanger 1650 is supplied to the wet tower 1500 and then falls again into the first region 1613 of the water storage tank 1600 through the lower connection pipe 1514 . Therefore, all the fine particles collected from the wet tower 1500 are completely collected in the water in the first region 1613 of the water storage tank 1600 , and this water is also cooled by the circulation pump 1640 and the heat exchanger 1650 . The relationship between circulation pump 1640 and heat exchanger 1650 is shown in more detail in FIG. 16 .

With the above structure, the semiconductor waste gas treatment scrubber 1000 of the present invention operates as follows.

As is well known, if the semiconductor waste gas is combusted through the burner 1200 and the combustion chamber 1300, particulates are generated. Among the generated particles, heavier particles fall through the lower connecting pipe 1354 into the first region 1613 of the water storage tank 1600 due to their gravity. Of course, the particles thus dropped are collected in the water in the first region 1613 .

Meanwhile, lighter fine particles are transferred into the wet tower 1500 through the intermediate connection pipes 1353 and 1513 without falling. However, the wet tower 1500 is designed so that water falls from its upper part to the lower part, and is provided with a plurality of filters (not shown), and fine particles also fall to the first area 1613 of the water storage tank 1600 through the lower connecting pipe 1514 middle. Therefore, fine particles that have fallen are also collected in the water in the first region 1613 .

The water of the first region 1613 is then soiled by the particles that have fallen and collected therein. Accordingly, the discharge pump 1620 operates for a predetermined length of time to discharge dirty water (particles and water) to the outside.

Here, discharge pump 1620 is a pneumatically operated diaphragm pump. Therefore, the powder and fine particles present in the first region 1613 are sucked in through the fluid inlet 1621 and discharged to the outside through the fluid outlet 1623 . In addition, after the discharge pump 1620 is operated, the air sucked through the air inlet 1625 is discharged through the air outlet, and the discharged air is transferred to the bubble generator 1630 through the tube 1625a. Therefore, as long as the discharge pump 1620 operates, a predetermined magnitude of impulse is applied to the water in the first area through the bubble generator 1630 .

Therefore, the particles collected in the first area 1613 continue to float in the water without settling or depositing on the bottom 1611 of the water storage tank 1600 . Accordingly, the floating particles and water are transferred to the discharge pump through the fluid inlet pipe 1622 and the fluid inlet 1621, and then discharged to the outside through the fluid outlet 1623, so that the particles in the water storage tank 1600 are easily discharged to the outside together with the water. Even if a certain thickness is deposited on the bottom 1611 of the water storage tank 1600, the air bubbles and momentum generated by the air bubble generator 1630 can break up the particles and make them float in the water. In addition, if a plurality of air bubble generators 1630 (for example, three) are disposed in the first region 1613 at intervals from each other, it is possible to prevent particles from being deposited or hardened at a specific region within the first region 1613 .

Then, at the rear side of the outer wall 1610 of the water storage tank 1600 , the circulation pump 1640 sucks water from the second area 1614 and sends the water to the heat exchanger 1650 , which in turn sends the water to the wet tower 1500 . Accordingly, water in the first area 1613 of the water storage tank 1600 naturally flows to the second area 1614 through the filter part 1617 installed between the first area 1613 and the second area 1614 . Since particles floating in the first region 1613 cannot pass through the filter portion 1617, only relatively clean water is supplied to the second region 1614. However, water again falls from the wet tower 1500 into the first area 1613 of the water storage tank 1600 through the lower connection pipe 1514 , whereby fine particles in the wet tower 1500 are collected in the first area 1613 of the water storage tank 1600 again.

Meanwhile, as described above, the pH sensor measures the acidity of water in the water storage tank 1600 . Sodium hydroxide is introduced into the water storage tank 1600 through the sodium hydroxide inlet 1618 if the results of the pH measurement indicate that the acidity exceeds a predetermined range. Of course, sodium hydroxide can be placed into the water storage tank 1600 automatically by mechanical or electrical equipment or manually by an operator.

As described above, the semiconductor waste gas treatment scrubber of the present invention can safely discharge the waste gas generated in the semiconductor manufacturing process into the atmosphere after burning and filtering the waste gas. Furthermore, the scrubber of the present invention allows for easy maintenance and repair of the device. In addition, according to the scrubber of the present invention, it is possible to reduce device clogging caused by doping of filtered particles into the device during the precipitation/deposition of particles after exhaust gas combustion.

According to the burner of the semiconductor waste gas treatment scrubber of the present invention, the mixing of fuel and oxygen can be simplified, so as to prevent the mixed gas of fuel and oxygen from mixing with the waste gas, and prevent the mutual mixing of the waste gas streams before the waste gas is burned, so that it can be Improve the efficiency of exhaust gas combustion.

According to the combustion chamber of the semiconductor exhaust gas treatment scrubber of the present invention and the particulate removal device installed in the combustion chamber, the inert gas (such as nitrogen) is supplied to the interior of the combustion chamber in the form of pulses, so that the inert gas provides an inner wall of the combustion chamber. The impulsive force of a predetermined magnitude, thereby, can prevent particles from being deposited on the inner wall of the combustion chamber.

According to the present invention, a plurality of nozzles for injecting inert gas are arranged in such a manner that they are spaced apart from each other and inclined at a predetermined angle with respect to the vertical direction of the combustion chamber so that the inert gas is naturally supplied into the combustion chamber in a swirling manner . Therefore, particulates can be more effectively removed and separated from the inner walls of the combustion chamber. In fact, by means of the inert gas supply according to the invention, it is possible to ensure that the cleaning cycle of the combustion chamber is extended from every three to four days to every three to four months.

Furthermore, according to the present invention, the inert gas can be supplied to the inside of the combustion chamber in various ways, whereby unnecessary waste of the inert gas can be avoided. For example, if the exhaust gas introduced into the combustion chamber contains a large amount of silicon, the inert gas is continuously supplied in pulses during the operation of the burner, and if the exhaust gas contains a small amount of silicon, the inert gas is intermittently supplied for a predetermined period of time. Alternatively, it is only supplied when the pressure in the combustion chamber is close to atmospheric pressure, whereby a minimum of inert gas is used.

According to the wet tower of the semiconductor exhaust gas treatment scrubber of the present invention, the positions of the first tower and the second tower can be exchanged, or the positions of the third tower and the fourth tower can be exchanged, thus, it can be based on the treatment status and the device status The wet tower is operated while changing the wet tower in various forms.

For this purpose, the desired column can be selected and separated from the wet column. Thereby, desired columns can be cleaned selectively, whereby the time required for cleaning can be greatly reduced.

According to the present invention, if the internal pressure rises due to clogging of the filter and the impingement plate by the particles, the inert gas having a predetermined pressure is forcibly supplied downward through the gas supply pipe, thereby, the clogging phenomenon caused by the particles can be eliminated or alleviated. And prolong the cleaning cycle.

For this purpose, according to the present invention, water can be sprayed simultaneously towards the first filter installed in the first tower through the first nozzle arranged above the first filter and the second nozzle arranged below the first nozzle. , thereby minimizing the amount of particulates deposited or accumulated on the first filter. Of course, with this solution, the cleaning cycle can be further extended.

Furthermore, according to the present invention, the first and second towers are provided with first and second transparent windows, so that the first and second filters of the first and second towers can be visually seen. Thus, it is possible to accurately judge when the first and second filters need to be cleaned.

According to the present invention, the water storage tank of the semiconductor waste gas treatment scrubber of the present invention and the particulate removal device installed therein periodically generate air bubbles in the water storage tank. Therefore, particles cannot settle on the bottom of the water storage tank. In addition, even if the particles have been deposited or accumulated on the bottom of the water storage tank, the particles can be pulverized and floated in water by air bubbles, and then the particles can be discharged outside together with the water when the discharge pump operates. Through this operation, the maintenance and repair or cleaning cycle of the water storage tank can also be extended.

Furthermore, according to the present invention, the air wasted in the operation of the discharge pump can be reused without adding any mechanism or equipment, and thus, the manufacturing cost is not additionally increased.

Although the preferred embodiment of the present invention has been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions can be made without departing from the invention disclosed in the appended claims scope and spirit.

Claims (45)

1. gas cleaner that is used to handle semiconductor waste gas, it comprises:

Supply section is used for supplying semiconductor waste gas, fuel and oxygen;

Burner, this burner are connected in described supply section and by the flame semiconductor waste gas of burning;

The combustion chamber, this combustion chamber is incorporated into described burner and makes the particulate that is produced when semiconductor waste gas is burnt drop;

Wet tower, this wet tower are installed in the sidepiece of described combustion chamber and make the particulate that transmits from described combustion chamber drop after water absorption; And

Water tank, this water tank are connected in described combustion chamber and wet tower and in order to collect the particulate that drops from described combustion chamber and wet tower;

Wherein, described burner comprises:

Main body, it has at least one semiconductor waste gas service duct, at least one fuel feed passage and at least one oxygen supply passage;

The fuel nozzle body, it is assemblied on the periphery of described main body, thereby forms fuel space and fuel nozzle; With

The oxygen jet body, this oxygen jet body is assemblied on the periphery of described main body and fuel nozzle body, thereby forms oxygen supply space and oxygen supply nozzle; And

Assembly, this assembly are assemblied on the periphery of described main body and oxygen jet body, thereby form the ANALYSIS OF COOLANT FLOW space, and described assembly is connected in described combustion chamber.

2. gas cleaner as claimed in claim 1 further comprises the support section of having family, and this chamber support section is arranged under the lower end, described combustion chamber and supports described combustion chamber.

3. gas cleaner as claimed in claim 1, wherein, described supply section comprises:

At least one waste gas supply pipe, it is connected in described burner and is this burner supplying semiconductor waste gas;

At least one bypass waste gas supply pipe, it is connected in described waste gas supply pipe and is that semiconductor waste gas is provided with bypass;

At least one fuel supply pipe, it is connected in described burner and supplies fuel to this burner; And

At least one oxygen supply pipe, it is connected in described burner and provides a supply of oxygen to this burner.

4. gas cleaner as claimed in claim 1, wherein, described main body comprises:

Extension, this extension are from the lower end level of described main body and extend predetermined length radially outwardly, and it has at least one and is formed on groove on the outer peripheral face;

Be positioned at first flange of the top of described extension, this first flange is from described main body level and extend the length greater than the development length of described extension radially outwardly; And

Be positioned at second flange of the top of described first flange, this second flange is from described main body level and extend the length greater than the development length of described first flange radially outwardly; And

Wherein at least one semiconductor waste gas service duct extends through described main body vertically, described at least one fuel feed passage extends through described main body downwards, make the outlet of described fuel feed passage be formed between the described extension and first flange, and described at least one oxygen supply passage extends through described main body downwards, makes the outlet of described oxygen supply passage be formed between described first flange and second flange.

5. gas cleaner as claimed in claim 4, wherein, the described groove that is formed on the main body tilts as follows: the virtual extended line of its lower end and the central axis of main body intersect, and wherein, described main body closely contacts with the fuel nozzle body, thereby, described groove forms fuel nozzle, and described fuel nozzle body closely contacts the extension and first flange, thereby, between described main body and fuel nozzle body, form fuel space.

6. gas cleaner as claimed in claim 5, wherein, described fuel nozzle body comprises:

Medium pore, it passes this fuel nozzle body central portion and forms, and described main body is fitted in this hole; And

The extension, its lower end around the outer peripheral face of described fuel nozzle body forms and radially extends a predetermined length, and wherein at least one groove is formed on the outer peripheral face of this extension.

7. gas cleaner as claimed in claim 6, wherein, being formed on described at least one groove on the extension of described fuel nozzle body tilts with the angle greater than the described groove on the extension that is formed on described main body and makes that the dummy line of extending from its lower end is crossing with the center line of described main body, and, described angle is towards the central axial line orientation of described burner, described fuel nozzle body closely contacts with the oxygen jet body, thereby, described at least one groove that is positioned on the extension of fuel nozzle body forms at least one oxygen jet, and described oxygen jet body closely contacts with second flange of described main body and the extension of described fuel nozzle body, thereby, forming one or more oxygen space between described first flange and second flange and between described fuel nozzle body and oxygen jet body.

8. gas cleaner as claimed in claim 4, wherein, described oxygen jet body comprises:

Medium pore, it passes this oxygen jet body central portion and forms, and described fuel nozzle body is fitted in this hole; And

The extension, its lower end around the outer peripheral face of described oxygen jet body forms and extends radially outward a predetermined length.

9. gas cleaner as claimed in claim 8, wherein, described assembly comprises medium pore, this medium pore passes this assembly central portion and forms, described oxygen jet body is fitted in this hole, and form the ANALYSIS OF COOLANT FLOW space between the inner peripheral surface of the outer peripheral face of described oxygen jet body and described assembly, a coolant hose is connected in this ANALYSIS OF COOLANT FLOW space.

10. gas cleaner as claimed in claim 4, wherein, described main body has: the conical surface of reversing, the summit of this reversing conical surface forms the lower end of described main body; And barrier, it extends predetermined length downwards around the described conical surface.

11. gas cleaner as claimed in claim 1, wherein, described combustion chamber comprises:

Top cover, described burner is fitted into the central portion of this top cover;

Hang the inner room of establishing from described top cover bottom side around described burner; And

Hang the mistress who establishes from described top cover bottom side around described inner room.

12. gas cleaner as claimed in claim 11, wherein, in the space between described top cover and mistress cooling tube is set and comes supply coolant, and in this cooling tube, form at least one through hole, thereby cooling agent is injected in the space between described inner room and mistress.

13. gas cleaner as claimed in claim 11, wherein, described inner room comprises inner room and following inner room, and inner room and following inner room can be taken apart each other this on, and described mistress also comprises mistress and following mistress, and mistress can take apart each other with following mistress on this.

14. gas cleaner as claimed in claim 11, wherein, described combustion chamber comprises:

Pass described mistress and inner room, be positioned at the igniter of the lower end of described burner, in order to realize initial ignition; And

Pass described mistress and inner room, be positioned at the UV sensor of the lower end of described burner, whether successfully realized initial ignition in order to detect.

15. gas cleaner as claimed in claim 11, wherein, described combustion chamber comprises that further supply is used to remove the part of the gas of particulate, and this supply is used to remove the gas that the part supply of the gas of particulate has predetermined pressure, makes particulate can not gather on the inwall of combustion chamber.

16. gas cleaner as claimed in claim 15, wherein, the part that described supply is used to remove the gas of particulate comprises:

Be incorporated into the feed tube of top cover outside, described combustion chamber;

Be connected in the flue of this feed tube, this flue forms ring-type along the space between described top cover and the inner room; And

At least one gas nozzle, it is incorporated into described flue and extends a predetermined length in described inner room.

17. gas cleaner as claimed in claim 16, wherein said gas nozzle comprises:

The straight portion that is parallel to the inwall extension of described combustion chamber; And

From the end of this straight portion towards the bend of the inwall bending of described combustion chamber, thereby gas can be to described combustion chamber inwall supply impulse force.

18. gas cleaner as claimed in claim 16 wherein, is provided with four gas nozzles, these four gas nozzles are that arrange at the center with the center of described inner room, and the angle intervals of 90 degree that are spaced apart from each other.

19. gas cleaner as claimed in claim 16, wherein, described gas nozzle tilts with respect to the vertical direction of described inner room, thereby in described inner room, gas can be supplied in the mode of vortex.

20. gas cleaner as claimed in claim 16, wherein, being used to remove the gas that the part of the gas of particulate supplies by described supply is inert gas.

21. gas cleaner as claimed in claim 16 wherein, is used to remove the form supply with pulse of gas that the part of the gas of particulate supplies by described supply.

22. gas cleaner as claimed in claim 16, wherein, substantially be the bottom that funnel shaped chamber down removably is attached to the combustion chamber mistress, and a particulate guide member is combined in the described inside of chamber down, and described particulate guide member is that infundibulate directs into described wet tower and water pot with the particulate that will be produced behind the waste gas burning.

23. gas cleaner as claimed in claim 22, wherein, described particulate guide member also comprises the inert gas tube that is used for inert gas injecting, thereby prevents that the steam that results from the water tank is directed in the described combustion chamber.

24. gas cleaner as claimed in claim 22, wherein said chamber down is provided with and is used to support described combustion chamber and make the chamber support section that described combustion chamber is separated.

25. gas cleaner as claimed in claim 24, wherein, described chamber support section comprises:

A pair of linearity is installed in the guide rail on the gripper shoe;

A pair of be installed on the described guide rail and can the reciprocating guide block of along continuous straight runs;

The a pair of brace table that is installed on the described guide block and extends upward a preset distance, each all has horizontal surface that is formed at this brace table top and the decline surface of extending at a predetermined angle from this horizontal surface downwards described brace table; And

One or more support bars that described brace table is connected with each other, described chamber down is provided with rolling element, and it is slidably that these rolling elements are mounted to along the horizontal surface of described brace table or decline surface.

26. gas cleaner as claimed in claim 1, wherein, described wet tower comprises:

Cylindrical shape Ji Ta with base portion nozzle;

Be installed in columnar first tower at the top of described Ji Ta removedly, in this first tower, be provided with first filter and first nozzle;

Be installed in columnar second tower at the top of described first tower removedly, in this second tower, be provided with second filter and second nozzle;

Be installed in columnar the 3rd tower at the top of described second tower removedly, in the 3rd tower, be provided with the 3rd filter and the 3rd nozzle; And

Be installed in columnar the 4th tower at the top of described the 3rd tower removedly, in the 4th tower, be provided with feed tube and a plurality of shock plate,

Wherein, the order assembling that described first tower and second tower can be different, and described the 3rd tower also can be with different order assemblings with the 4th tower.

27. gas cleaner as claimed in claim 26, wherein, the height and the diameter of described first tower and second tower are mutually the same, and the height of described the 3rd tower and the 4th tower and diameter be mutually the same, and the diameter of described first tower and second tower is different with the diameter of described the 3rd tower and the 4th tower.

28. gas cleaner as claimed in claim 26, wherein, the porosity of described first filter, second filter and the 3rd filter is successively decreased with the order of first filter, second filter to the, three filters.

29. gas cleaner as claimed in claim 26, wherein, fresh water is supplied by the base portion nozzle, and supplies with the 3rd nozzle by described first, second through the water that described water tank purifies.

30. gas cleaner as claimed in claim 26, wherein, open-topped lid is assemblied on the top of described the 4th tower, first discharge pipe with pressure detecting mouth, temperature detection mouth and cooling air supply mouth is connected in described lid, and second discharge pipe is connected in the top of described first discharge pipe, described second discharge pipe has the discharge rate control member, thereby can control discharge rate.

31. gas cleaner as claimed in claim 26, wherein, described Ji Ta is connected in described combustion chamber and water tank by intermediate connection tube and following tube connector, and described base portion nozzle is arranged to and can be up sprayed water towards first filter that is installed in described first tower.

32. gas cleaner as claimed in claim 26, wherein, described Ji Ta also includes the pressure detecting mouth, is used for detecting the pressure of this base tower.

33. gas cleaner as claimed in claim 26, wherein, first nozzle of described first tower is arranged on the top of first filter, and its set-up mode is for making it possible to down towards described first filter water spray.

34. gas cleaner as claimed in claim 26, wherein, described first tower also comprises the first transparent window in the wall that is formed at described first tower, thereby, can see first filter that is positioned at this first tower intuitively.

35. gas cleaner as claimed in claim 26, wherein, second nozzle of described second tower is arranged on the top of described second filter, and its set-up mode is for making it possible to down towards described second filter water spray.

36. gas cleaner as claimed in claim 26, wherein, described second tower also comprises the second transparent window in the wall that is formed at described second tower, thereby, can see second filter that is positioned at described second tower intuitively.

37. gas cleaner as claimed in claim 26, wherein, the 3rd nozzle of described the 3rd tower is arranged on the top of described the 3rd filter, and its set-up mode is for making it possible to down towards described the 3rd filter water spray.

38. gas cleaner as claimed in claim 26, wherein, each all is formed with a plurality of through holes the shock plate of described the 4th tower, and described shock plate is stacked to vertically and separates each other, being formed on two through holes in the adjacent shock plate staggers each other, and described feed tube is arranged on the top of described shock plate, and its set-up mode is for making it possible to down towards described shock plate supplying inert gas.

39. gas cleaner as claimed in claim 1, wherein, described water tank comprises:

First area, this first area are assembled in the below of described combustion chamber and wet tower and collect water and the particulate that drops from this combustion chamber and wet tower;

Second area, this second area separate and have filtered out from the supply of described first area the water of particulate by separator and described first area; And

Described separator is provided with filtration fraction, in order to particulate is filtered from water.

40. gas cleaner as claimed in claim 39, wherein, an excavationg pump also is connected in described first area, is used for water and particulate are discharged to the outside together.

41. gas cleaner as claimed in claim 40, wherein, described excavationg pump has: fluid intake and fluid issuing, in order to suction and discharge water and particulate; Air intake and air outlet slit are used for moving this excavationg pump to described excavationg pump supply air pressure; And at least one bubble generator, this bubble generator is connected in described air outlet slit by pipe and is immersed in the water of described water tank first area a predetermined degree of depth.

42. gas cleaner as claimed in claim 41, wherein, described excavationg pump is the pneumatic diaphragm pump.

43. gas cleaner as claimed in claim 41, wherein, described bubble generator is the noise silencer that is used to reduce the excavationg pump noise.

44. gas cleaner as claimed in claim 41, wherein, discharge air from described excavationg pump, described bubble generator all produces bubble in the water of water tank at every turn, thereby, be collected in particulate in the water and swim in constantly in the water and do not deposit or accumulate on the bottom of water tank.

45. gas cleaner as claimed in claim 41, wherein, the inlet of circulating pump is connected in the second area of described water tank, and outlet of circulating pump is connected in described wet tower through over-heat-exchanger.

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