CN1900358A - Apparatus for electroless deposition of metals onto semiconductor substrates - Google Patents

Abstract

The invention discloses an electroless deposition system and an electroless deposition platform. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a substrate surface, a second processing station configured to electrolessly deposit a layer onto the substrate surface, and positioned to A substrate shuttle that transfers substrates between the second processing station. The electroless deposition station also includes various fluid delivery and substrate temperature control devices to achieve a contamination-free and uniform electroless deposition process.

Description

Apparatus for electroless deposition of metals onto semiconductor substrates

technical field

Embodiments of the invention generally relate to electroless deposition systems for semiconductor processing.

Background technique

Metallization with sub-100nm sized features is a fundamental technology for current and next generation integrated circuit manufacturing processes. More specifically, in devices such as VLSI devices (i.e., devices with integrated circuits containing millions of logic gates), large aspect ratio (ie, greater than 25:1) to form the multilevel interconnects at the core of these devices. For these size classes, traditional deposition techniques such as chemical vapor deposition and physical vapor deposition cannot be used to reliably fill interconnect features. As a result, sputtering techniques, ie, electrochemical and electroless plating, have been developed as promising process technologies for void-free filling of sub-100 nanometer-sized high aspect ratio interconnect features in integrated circuit fabrication processing. In addition, electrochemical and electroless plating processes have also been developed as promising process technologies for depositing other layers such as capping layers.

However, for electroless processing, conventional electroless processing systems and methods have faced several challenges, such as precisely controlling the deposition process and the defect rate in the resulting deposited layer. More specifically, because the resistive heaters and heat lamps used in conventional electroless plating cells have been unable to consistently provide a uniform temperature across the surface of the substrate that is critical to the uniformity of the electroless deposition process , so conventional systems have suffered from poor substrate temperature control. Additionally, conventional electroless systems have not controlled the environment inside the electroless deposition chamber, which has recently been found to have a substantial impact on defectivity.

Also, due to environmental and cost of ownership (CoO) considerations, it is desirable to reduce the cost of expensive electroless treatment chemicals by reducing the liquid flow required to obtain sufficiently uniform coverage on the receiving surface of the substrate. waste. Since the speed and uniformity with which an electroless plating process solution is delivered to a substrate surface can affect deposition process results, there is a need for devices and methods that can uniformly deliver various process solutions. It is also desirable to control the substrate temperature by using conductive and convective heat transport on the backside of the substrate as the liquid is in contact with and flows between the substrate and the supporting substrate member.

Furthermore, a functional and efficient integrated platform for electroless deposition processes capable of depositing uniform layers with minimal defects has yet to be developed. Likewise, there is a need for an integrated electroless deposition apparatus capable of depositing uniform layers with minimal defects.

Contents of the invention

Embodiments of the present invention provide an electroless processing chamber adapted to process substrates, the electroless processing chamber including a platen assembly positioned in the processing region, the platen assembly including a base member that having a fluid hole formed therethrough; a fluid diffusion member sealably positioned to the base member and having an upstream side and a downstream side, wherein the fluid diffusion member has a fluid between the upstream side and the downstream side a plurality of fluid passages in communication; a fluid volume formed between the base member and the upstream side of the fluid diffusion member; a feature protruding upward a first distance from the downstream side of the fluid diffusion member; and A rotating substrate support assembly is positioned in the processing region and has a substrate support surface, wherein the rotatable substrate support is adapted to rotate relative to the platen assembly.

Embodiments of the present invention also provide an electroless processing chamber adapted to process a substrate, the electroless processing chamber comprising a platen assembly positioned in the processing region, the platen assembly comprising a base member, having a fluid aperture formed therethrough; a fluid diffusion member sealably positioned to the base member and having an upstream side and a downstream side; a fluid volume formed between the base member and the fluid diffusion member's upstream side between; and a plurality of fluid passages formed in the fluid diffusion member, wherein the plurality of fluid passages are in fluid communication between the upstream side and the downstream side of the fluid diffusion member, and the At least one of the plurality of fluid channels further includes a first feature in fluid communication with the upstream side and having a first cross-sectional area; and a second feature having a second cross-sectional area, wherein the first a feature in fluid communication with the second feature; and a rotatable substrate support assembly positioned in the processing region and having a substrate support surface, wherein the rotatable substrate support is adapted relative to the stage The plate assembly rotates.

Embodiments of the present invention also provide an electroless processing chamber adapted to process substrates, the electroless processing chamber including a rotatable substrate support assembly positioned in a processing region of the electroless processing chamber and Having one or more substrate support surfaces; an edge abutment positioned in the processing region and having a first surface, wherein the edge abutment and/or is positioned on the one or more substrate support surfaces a substrate positioned to form a gap between the first surface and an edge of the substrate; and a fluid source positioned to deliver an electroless plating treatment solution to a substrate positioned on the substrate support surface.

Embodiments of the present invention also provide an electroless processing chamber adapted to process substrates, the electroless processing chamber including a rotatable substrate support assembly positioned in a processing region of the electroless processing chamber and There are one or more substrate support features, each of which has a substrate support surface; a basin assembly, which is positioned in the processing region and has one or more walls forming a fluid volume, the fluid volume is suitable for for receiving said one or more radially spaced substrate support features and a fluid therein; a fluid source associated with said fluid volume and substrate fluid positioned on said one or more substrate support surfaces in communication with; and a fluid heater in thermal communication with the fluid in the fluid volume.

Embodiments of the present invention also provide an electroless processing chamber adapted to process substrates, the electroless processing chamber including a platen assembly positioned in a processing region, the platen assembly including a fluid diffusion member that having an upstream side and a downstream side, and a plurality of fluid passages in fluid communication between the upstream side and the downstream side; a first base member having a first fluid hole formed therethrough, wherein the first base a member sealably positionable to the fluid diffusion member, and the first fluid aperture is in fluid communication with at least one of the plurality of fluid passages formed in the fluid diffusion member; and a second base member having A second fluid hole is formed therethrough, wherein the second base member is sealably positionable to the fluid diffusion member, and the second fluid hole is connected to the plurality of fluid channels formed in the fluid diffusion member and a rotatable substrate support assembly positioned in the processing region and having a substrate support surface, wherein the rotatable substrate support is adapted to rotate relative to the platen assembly.

Description of drawings

So that the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, will be rendered by reference to embodiments, some of which are illustrated in the accompanying drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit other equally effective embodiments.

FIG. 1 is a top view of an exemplary substrate processing system.

2 is a perspective view of an exemplary electroless deposition system and enclosure included in the substrate processing system.

3 is a perspective view of an exemplary electroless deposition system with a shroud removed.

4 is a vertical cross-sectional view of an exemplary electroless deposition system and enclosure.

5A is a vertical cross-sectional view of an exemplary fluid handling station.

5B is a cross-sectional view of an exemplary deck assembly positioned in the fluid processing station shown in FIG. 5A.

5C is an enlarged vertical cross-sectional view of a portion of the exemplary deck assembly shown in FIG. 5B.

5D is an enlarged vertical cross-sectional view of a portion of another embodiment of a cross-sectional view of an exemplary deck assembly positioned in a fluid processing station.

5E is a vertical cross-sectional view of an exemplary deck assembly positioned in the fluid processing station shown in FIG. 5A.

Figure 5F is a vertical cross-sectional view of an exemplary fluid handling station.

Figure 6 is an isometric view of an exemplary substrate support assembly.

Figure 7 is a vertical cross-sectional view of an exemplary fluid handling station.

8A is an enlarged vertical cross-sectional view of an exemplary fluid handling station.

8B is a vertical cross-sectional view of an exemplary edge abutment positioned in the fluid handling station shown in FIG. 8A.

8C is a cross-sectional view of another embodiment of an exemplary edge abutment positioned in the fluid handling station shown in FIG. 8A.

8D is a cross-sectional view of the exemplary edge abutment shown in FIG. 8C with the edge abutment in contact with the substrate.

8E is a cross-sectional view of the finger tips of the exemplary wafer holding assembly positioned in the fluid handling station shown in FIG. 8A.

8F is a cross-sectional view of another embodiment of a finger tip of the exemplary wafer holding assembly positioned in the fluid handling station shown in FIG. 8A.

Figure 9 is a vertical cross-sectional view of an upward facing electroless plating process chamber utilizing nozzles disposed on a fluid distribution arm within the chamber.

9A is a vertical cross-sectional view of the electroless processing chamber shown in FIG. 9 with the substrate support assembly in its raised position.

9B is a vertical cross-sectional view of an alternative embodiment of the electroless processing chamber of FIG. 9 .

FIG. 10 is a horizontal cross-sectional view of the electroless plating treatment chamber of FIG. 9 .

Figure 11 is a vertical cross-sectional view of an alternative embodiment of an electroless plating process chamber.

11A is a cross-sectional view of the electroless processing chamber of FIG. 11 with a gas deflector positioned within the chamber.

11B is another vertical cross-sectional view of the electroless processing chamber of FIG. 11A with the gas deflector in its raised position.

Figure 12 is a vertical cross-sectional view of another embodiment of an electroless plating processing chamber in which the chamber lid assembly is movable.

13 and 14 are cross-sectional views of embodiments of treatment fluid delivery systems, including two embodiments of nozzles that may be used in connection with the electroless processing chambers described herein.

Detailed ways

FIG. 1 illustrates an embodiment of a system 100 . The system 100 includes a factory interface 130 that includes a plurality of substrate loading stations 134 configured to interface with substrate holding cassettes. A factory interface robot 132 is positioned in the factory interface 130 and is configured to acquire and transfer substrates 126 into and out of cassettes positioned on substrate loading stations 134 . The factory interface robot 132 also extends into the connection channel 115 connecting the factory interface 130 to the main frame 113 . The location of the factory interface robot 132 allows access to a substrate loading station 134 to obtain a substrate therefrom and then deliver the substrate 126 to one of the processing unit locations 114, 116 located on the main rack 113, or alternatively to the annealing chamber 135 . Similarly, the factory interface robot 132 may be used to obtain the substrate 126 from the processing unit locations 114, 116 or the anneal chamber 135 after the substrate processing sequence is completed. In this case, the factory interface robot 132 may return the substrate 126 into one of the cassettes positioned on the substrate loading station 134 for removal from the system 100 .

Factory interface 130 may also include metrology inspection station 105 , which may be used to inspect substrates before and/or after they are processed in system 100 . Metrology station 105 may be used, for example, to analyze properties of materials deposited on a substrate, such as thickness, planarity, grain structure, surface morphology, and the like. Exemplary metrology inspection stations 105 that may be used in embodiments of the present invention include the BX-30 Advanced Interconnect Metrology System and CD-SEM or DR-SEM inspection stations, all of which are available from Applied Materials, Inc. of Santa Clara, California. commercial acquisition. An exemplary metrology inspection station is also described in commonly assigned U.S. Patent Application No. 60/513,310, filed October 21, 2003, entitled "Plating System with Integrated Substrate Inspection," which is hereby incorporated by reference in its entirety (at to the extent not inconsistent with this invention) are incorporated herein.

The anneal chamber 135 typically comprises a two-position anneal chamber in which a cooling plate 136 and a heating plate 137 are positioned adjacent to each other and a substrate transfer robot 140 is positioned adjacent thereto, eg, between two stages. The substrate transfer robot 140 is generally configured to move the substrate between the heated plate 137 and the cooled plate 136 . The system 100 may include a plurality of anneal chambers 135, wherein the anneal chambers 135 may be in a stacked configuration. Furthermore, while the anneal chamber 135 is shown positioned to be accessible from the connecting channel 115 , embodiments of the invention are not limited to any configuration or arrangement of the anneal chamber 135 . At the same time, the annealing chamber 135 may be located at a position communicating with the main frame 113, i.e., accessible by the main frame robot 120, or alternatively, the annealing chamber 135 may be located on the same system as the main frame 113, but may Not in direct contact with main rack 113 or accessible by main rack robot 120 . For example, as shown in FIG. 1 , anneal chamber 135 may be positioned in direct communication with connection channel 115 , which allows access to main chassis 113 via robotics 132 and/or 120 . Further description of the anneal chamber 135 and its operation can be found in commonly assigned U.S. Patent Application No. 10/823,849, filed April 13, 2004, entitled "Two Position Anneal Chamber," which is hereby incorporated by reference in its entirety (at to the extent not inconsistent with this invention) are incorporated herein.

The main frame 113 includes a centrally located main frame robot 120 . The main rack robot 120 generally includes one or more pallets 122, 124 configured to support and transport substrates. Additionally, the main rack robot 120 and attached pallets 122, 124 are typically configured to independently extend, rotate, pivot, and move vertically such that the main rack robot 120 can simultaneously insert substrates into multiple processing unit locations 102 , 104 , 106 , 108 , 110 , 112 , 114 , 116 and removing substrates from the plurality of processing unit locations positioned on the main chassis 113 . Similarly, the factory interface robot 132 also includes the ability to rotate, extend, pivot and move its substrate support pallet vertically, while also allowing linear March.

In general, processing unit locations 102, 104, 106, 108, 110, 112, 114, 116 may be any number of processing units that may be used in a substrate processing system. More specifically, processing cells or locations may be configured as electrochemical plating cells, cleaning cells, bevel clean cells, spin wash drying cells, substrate surface cleaning cells (which collectively include cleaning, cleaning, and etching cells) , electroless plating cells (including pre-cleaning and post-cleaning cells, activation cells, deposition cells, etc.), metrology inspection stations, and/or other processing units that may be advantageously used in conjunction with deposition processing systems and/or platforms .

The various processing unit locations 102, 104, 106, 108, 110, 112, 114, 116 and robots 132, 120 are generally in communication with a system controller 111, which may be a microprocessor-based control system configured as Input is received from both a user and/or various sensors located on the system 100, and the operation of the system 100 is suitably controlled in accordance with the input and/or predetermined processing methods. The controller 111 generally includes a storage device (not shown) and a CPU (not shown), which are used by the controller 111 to save various programs, process programs, and execute programs as necessary. Memory is connected to the CPU and can be local or remote, one of the easily accessible types of memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage or more. Software instructions and data may be encoded and stored in the memory for instructing the CPU. Support circuitry (not shown) is also connected to the CPU to support the processor in a conventional manner. Support circuits may include cache, power supplies, clock circuits, input/output circuits, subsystems, etc. as known in the art. A program (or computer instructions) readable by the controller 111 determines which tasks can be performed in the chamber. Preferably, the program is software readable by the processor 111 and includes instructions to monitor and control the electroless plating process based on defined rules and input data.

In addition, treatment unit locations 102, 104, 106, 108, 110, 112, 114, 116 are also in communication with a fluid delivery system, such as fluid introduction system 1200 described below, which is configured to introduce desired treatment fluids during treatment. supplied to each processing unit. Typically, one or more fluid delivery systems are controlled by system controller 111 . An exemplary fluid delivery system can be found in commonly assigned U.S. Patent Application No. 10/438,624, filed May 14, 2003, entitled "Multi-Chemistry Electrochemical Processing System," which is hereby incorporated by reference in its entirety (at to the extent not inconsistent with this invention) are incorporated herein.

As shown in FIG. 1, in the exemplary system 100, the processing unit locations 102, 104, 106, 108, 110, 112, 114, 116 may be structured as follows. Processing unit locations 114 and 116 may be configured as interfaces between wet processing stations on main frame 113 and substantially dry processing stations in connection tunnel 115 , anneal chamber 135 , and factory interface 130 . For example, the processing unit positions 114, 116 located at the interface may be spin washer drying units and/or substrate cleaning units. Each of the processing unit locations 114 and 116 may include a spin washer drying unit and a substrate cleaning unit in a stacked configuration. Alternatively, processing unit location 114 may include a spin wash-dry unit, while processing unit location 116 may include a substrate cleaning unit. In another embodiment, each of the processing unit locations 114 and 116 may include a combined spin wash-dry unit and substrate cleaning unit. A detailed description of an exemplary spin washer dry cell used in embodiments of the present invention can be found in commonly assigned U.S. Patent Application No. 10/680,616, filed October 6, 2003, entitled "Spin Rinse Dry Cell" found, which is hereby incorporated by reference in its entirety (to the extent not inconsistent with the present invention).

The processing unit locations 106, 108 may be configured as substrate cleaning units, and more specifically, the processing unit locations 106, 108 may be configured as substrate edge cleaning units, i.e., configured to clean the substrate from the perimeter of the substrate after the deposition process has been completed. (and optional back) to remove excess deposits from the unit. Exemplary edge cleaning cells are described in commonly assigned U.S. Patent Application No. 10/826,492, filed April 16, 2004, entitled "Integrated Bevel Clean Chamber," which is hereby incorporated by reference in its entirety (to the extent not inconsistent with the present invention to the extent it is incorporated herein. Embodiments of the present invention also contemplate that the processing unit locations 106, 108 may be omitted from the system 100 if desired. Additionally, the processing unit locations 106, 108 may be configured as electroless processing cells or cell pairs, which will be discussed further herein.

The processing unit locations 102, 104 and 110, 112 may be configured as electroless processing cells. The electroless processing unit locations 102, 104, 110, 112 may be located on the main frame 113 within the processing enclosures 302 in a configuration where two processing units are located in each processing enclosure 302, i.e., the processing unit locations 110 and 112 Processing unit locations 102 and 104 may operate in a first processing enclosure 302 as first and second processing units, while processing unit locations 102 and 104 may operate in a second processing enclosure 302 as third and fourth processing units. In addition, as mentioned above, embodiments of the present invention contemplate situations where, if desired, processing unit locations 106 and 108 may have processing enclosures 302 positioned above processing unit locations 106, 108 while these processing unit locations 106 , 108 may be configured to operate in a similar manner as processing unit locations 102 , 104 , 110 , 112 .

Electroless plating processing units positioned in processing enclosure 302 may include plating or plating support units, eg, electrochemical plating cells, electroless plating cells, electroless activation cells, and/or substrate washing or cleaning cells. In the exemplary electroless plating system 100, one fluid treatment unit in each pair of units on the system 100 will serve as an activation unit, while the other treatment unit of the pair will serve as an electroless deposition unit. This configuration is typically replicated in the opposing process enclosure 302 on the opposite side of the system 100 . For example, while the invention is not limited to any particular configuration, processing unit location 102 may be configured as an electroless activation cell, while processing unit location 104 may be configured as an electroless deposition cell. Similarly, treatment unit location 112 may be configured as an electroless activation unit, while treatment unit location 110 may be configured as an electroless deposition unit. The processing units in each processing enclosure 302 generally operate independently of each other under the control of the system controller 111 .

FIG. 2 is a perspective view of an exemplary electroless deposition system 100 and enclosure 302 shown as examples of process unit locations 110 , 112 . For clarity, FIG. 2 omits the hardware at the processing unit locations 110, 112. The processing enclosure 302 defines a controlled processing environment around the pair of processing unit locations 110 , 112 . The processing enclosure 302 may include a central interior wall 308 that generally bisects the processing volume into two substantially equal-sized processing volumes 312, 313. Although the central inner wall 308 is optional, when implemented, the central inner wall 308 generally creates a first processing volume 312 above the processing unit location 110 and a second processing volume 313 above the processing unit location 112 . The first and second processing volumes 312 and 313 are substantially isolated from each other by the central inner wall 308; however, the lower portion of the central inner wall 308 includes a notch or groove 310 formed therein. Slot 310 is sized to accommodate substrate transfer shuttle 305 , which is positioned between processing unit locations 110 and 112 . The substrate transfer shuttle 305 is generally configured to transfer substrates between processing units (110-112) without the use of the main rack robot 120. The substrate transfer shuttle 305 may be a vacuum chuck type substrate support member configured to pivot about a point such that the distal substrate support end of the substrate transfer shuttle 305 is at arrow 303 (see FIG. 1 ). direction to transport substrates between the respective processing unit positions 110 , 112 . Each of the respective processing volumes 312, 313 may also include an access port 304 that is sealable and configured to allow a robot, such as the main rack robot 120, to access the respective processing volume 312, 313 to insert a liner thereto. bottom or remove the substrate from it.

Each of the respective processing volumes 312, 313 also includes an environmental control assembly 315 positioned on an upper portion of the respective processing volume 312, 313 (as shown in FIG. 2, removed from contact with the processing enclosure for clarity). The environmental control assembly 315 includes a process gas source (not shown) in fluid communication with the processing volumes 312 , 313 and is configured to provide process gas to the respective processing volumes 312 , 313 . The process gas source is typically configured to provide a flow of an inert gas, such as nitrogen, helium, hydrogen, argon, and/or mixtures of these gases, or a gas commonly used in semiconductor processing, to each processing volume 312, 313. other gases. Environmental control assembly 315 also includes a particulate filtration system, such as a high efficiency particulate air (HEPA) type filtration system. A particulate filtration system is used to remove particulate contaminants from the gas stream entering the processing volume 312,313. The particulate filtration system is also used to generate a substantially linear and equal flow of process gas to the underlying process unit locations. The environmental control assembly 315 may also include devices configured to control humidity, temperature, pressure, etc. in the respective processing volumes 312, 313. The system controller 111 may be used to regulate the operation of the environmental control components and the exhaust port 314, as well as other components of the system 100, according to the processing method or received from sensors or detectors (not shown) positioned in the processing volumes 312, 313. Input to control the oxygen content within the process volume 312,313.

In operation, process gases are provided to the process volumes 312 , 313 , typically via the environmental control assembly 315 . The step of introducing process gases into the respective process volumes 312, 313 is operative to fill the interior of the closed process environment with an inert gas, thereby purging the process volumes 312, 313 of gases such as oxygen that may degrade the electroless plating process. Typically, the process gas source introduces process gas into the process volumes 312, 313 near the top or upper portion of the respective process volumes 312, 313 at a location above the process unit locations 110, 112 near the middle of the respective process volumes 312, 313. Process gases are typically introduced into the process volumes 312, 313 through a HEPA-type filtration system configured to minimize airborne particulates and balance both the flow rate and direction of the process gases so that the gases are directed toward the process unit locations 110, 112 Flow evenly and at a continuous flow rate.

Each of the processing unit locations 110, 112 also includes at least one exhaust port 314 (or, if desired, a plurality of radially positioned exhaust ports 314) positioned to facilitate process gas from a gas supply in an environmental control assembly 315 Uniform flow towards processing unit locations 110,112. The exhaust port 314 may be positioned below the substrate being processed at each processing unit location 110 , 112 , or alternatively, the exhaust port 314 may be positioned radially outward from the respective processing unit location 110 , 112 . Regardless of location, the exhaust ports 314 may be configured to facilitate uniform flow of process gases, while optionally facilitating the exhaust of fluids and chemical vapors from the various process unit locations 110 , 112 .

A typical process for supplying the inert gas to the treatment volumes 312, 313 includes supplying the inert gas at a flow rate between about 10 slm and about 300 slm (or, more specifically, between about 12 slm and about 80 slm). In general, the flow rate should be sufficient to minimize undesired amounts of gas trapped or leaked into the process volume. The flow rate of the inert gas may be reduced when the respective processing volume 312, 313 is closed, ie the access port 304 is closed. When the access port 304 is open, ie, when a substrate is being transferred into or out of the processing enclosure 302 , the process gas flow rate is increased to create an outward flow of gas from the processing enclosure 302 . This outward flow of gas is configured to prevent ambient gas, specifically oxygen, from entering the interior of the processing enclosure. Once the access port 304 is closed, the process gas flow rate may be reduced to a flow rate that allows for substrate processing. This flow rate may be maintained for a period of time prior to initiation of substrate processing so that any incoming oxygen may be removed from the processing volume 312, 313 prior to initiation of the processing sequence. The exhaust port 314 works in conjunction with the process gas supply to remove oxygen from the process volume 312 , 313 . Exhaust ports 314 typically communicate with standard manufacturing equipment exhaust systems and are used to remove process gases from the process volumes 312 , 313 . In an alternative embodiment of the invention, the processing volume 312, 313 may comprise a vacuum pump arranged in fluid communication with the processing volume 312, 313. The vacuum pump can be used to further reduce the presence of undesired gases in the process volume 312,313. Regardless of exhaust or pump configuration, the environmental control assembly 315 is generally configured to maintain the oxygen content inside the processing volumes 312, 313 below about 500 ppm during substrate processing, and more specifically, below about 100 ppm during substrate processing.

The combination of the environmental control assembly 315, exhaust port 314, and system controller 111 also allows the system 100 to control the oxygen content of the processing volumes 312, 313 during specific processing steps, where a processing step may require a first oxygen content for optimal results, While the second processing step may require a second oxygen content for optimized results, the first and second oxygen content are different from each other. In addition to the oxygen content, the system controller 111 may also be configured to control other parameters of the treatment enclosure, such as temperature, humidity, pressure, etc., as desired for a particular treatment sequence. These specific parameters may be varied by heaters, coolers, humidifiers, dehumidifiers, vacuum pumps, gas sources, air filters, fans, etc., all of which may be contained in the environmental control assembly 315, arranged in conjunction with the process volume 312, 313 is in fluid communication and is controlled by the system controller 111.

The processing volumes 312, 313 are typically sized to facilitate electroless plating processes, i.e., the processing volumes 312, 313 are sized so that the gas supply of the environmental control assembly 315 can maintain a low oxygen content (typically less than about 500 ppm, more specifically, less than about 100 ppm), while still allowing sufficient volume to support evaporation of the fluid solution in the volume without saturating the treatment volume 312, 313 with vapor. Taking into account the volume of headspace typically required to prevent vapor saturation, the inventors have found that the headspace for each processing location 110, 112 will generally be between about 1000 in ³ and about 5000 in ³ for a 300 mm substrate processing location . Also, the headspace for the process volumes 312, 313 of the present invention will typically be, for example, between about 1500 in ³ and about 5000 in ³ , or between about 2000 in ³ and about 4000 in 3 , or between about 2000 in 3 and about 4000 in ³ , when configured for 300 mm substrate processing, or between Between about 2000in ³ and about 3000in ³ . Also, from the top surface of a substrate positioned in one of the processing unit locations 110, 112 to the top of the processing volume 312, 313 (this volume is commonly referred to as the headspace) across the region over that processing location The vertical distance is generally between about 6 inches and about 40 inches high, and has the diameter or cross-section of the processing location 110,112. More specifically, the height of the headspace can be between about 12 inches and about 36 inches, while the horizontal dimensions of the processing volumes 312, 313 are generally close to the perimeter of the respective processing unit locations 110, 112, which are typically made smaller than the respective processing unit locations 110, 112. The diameter of the substrate being processed in the positions 110, 112 is between about 10% and about 50% larger than the dimension. These dimensions are important to the operation of the apparatus of the present invention, since smaller process volumes are prone to vapor saturation, which negatively affects the electroless plating process. At the same time, the inventors have determined that proper headspace (the cross-sectional area of the processing site extending the distance from the substrate to the top of the enclosure) is of considerable importance to prevent vapor saturation and the defects associated therewith.

While the processing volumes 312, 313 are generally isolated from each other, the slot 310 allows gas from one processing volume to pass into an adjacent processing volume. Also, embodiments of the present invention provide for a higher pressure in one treatment volume than in an adjacent treatment volume. This pressure differential allows control of crosstalk between the various processing volumes 312, 313, since if this pressure differential is maintained, the gas flow between the processing volumes will be in the same direction and at the same flow rate. Thus, one of the treatment units may be configured as a cold treatment unit, such as an activation unit, and the other treatment unit may be configured as a heated treatment unit, such as an electroless deposition unit. In this embodiment, the heated treatment unit is pressurized to a higher pressure, and at the same time, the heated fluid treatment unit always flows gas through slot 310 into the cooler fluid treatment unit. This configuration prevents cooler processing units from reducing the temperature of heated processing cells, since heated processing cells (ie, electroless deposition cells) are generally more susceptible to temperature fluctuations to cause defects than cooling fluid processing cells (ie, activation cells).

In another embodiment, the individual processing volumes 312, 313 may be completely isolated from each other by the central inner wall 308, ie, the substrate transfer shuttle 305 and tank 310 are removed. In this embodiment, the main rack robot 120 may be used to individually service or access each isolated processing volume 312, 313 via a respective access port 304 and may be operable to transfer substrates between the respective processing volumes 312, 313 .

3 is a perspective view of an exemplary deposition station 400 with the processing enclosure 302 removed therefrom. Deposition station 400 generally represents an embodiment of the processing unit shown in FIGS. 1 and 2 . The processing units shown in deposition station 400 may be electroless activation station 402 and electroless deposition station 404 . A substrate transfer shuttle 305 is positioned between the stations 402 and 404 and is configured to transfer substrates between the respective stations 402 , 404 . Each stage 402, 404 includes a rotatable substrate support assembly 414 configured to support a substrate 401 for processing in the respective stage in an upwardly facing orientation, that is, with the processing surface of the substrate 401 facing away from the substrate. The orientation of the support assembly 414 . In FIG. 3, stage 402 is shown without substrate 401 on substrate support assembly 414, while stage 404 has substrate 401 supported on substrate support assembly 414 to show both loaded and unloaded states. Each platform below. Typically, the hardware configuration of the various stations 402, 404 will be the same; however, embodiments of the invention are not limited to configurations in which the stations 402, 404 have the same hardware. For example, the present invention contemplates that the deposition station 404 may have a platen assembly 403 as will be described herein, while the electroless activation station 402 may be configured without the platen assembly 403 .

A substrate support assembly 414 (also shown in cross-sectional view in FIG. 4 ) includes a ring 411 having a plurality of vertically extending substrate support fingers 412 extending therefrom. As generally shown at processing location 404 in FIG. 3 and in the cross-sectional view of FIG. 4 , substrate support fingers 412 generally include an upper horizontal surface configured to support an edge or bevel of substrate 410 . The substrate support fingers 412 may also include vertical post members 415 positioned to center the substrate 401 on each support finger 412 . The substrate support assembly 414 also includes a lift assembly 413, illustrated in FIG. actuated to load and unload substrates 401 from the respective stages 402 , 404 .

Each of the respective stages 402, 404 includes a dispensing arm 406, 408 configured to pivot over the substrate 401 during processing to dispense processing fluid onto the front side or production surface of the substrate 401 . The fluid dispensing arms 406, 408 may also be configured to be positioned vertically relative to the substrate, i.e., the fluid dispensing portion of the dispensing arms 406, 408 may be positioned between about 0.5 mm and about 30 mm from the surface of the substrate 401 being processed. between, or more specifically, between about 5mm and about 15mm, or between about 4mm and about 10mm. The vertical and/or angular position of the fluid dispensing portions of the dispensing arms 406, 408 may be adjusted during processing of the substrate, if desired. The distribution arms 406, 408 may include more than one fluid conduit therein, and at the same time, the distribution arms 406, 408 may be configured to distribute various process fluids therefrom onto the substrate 401 . In one embodiment, one or more fluid introduction systems 1200 discussed below in connection with FIGS. 9 and 9A-B are coupled to distribution arms 406 and/or 408 to deliver process fluids to the substrate 401 surface.

Exemplary solutions that may be dispensed by dispensing arm 406 or arm 408 include rinse solutions, cleaning solutions, activation solutions, electroless plating solutions, and other solutions that may be required to support the electroless deposition process. Additionally, fluid conduits (not shown) in each dispensing arm 406, 408 may be heated/cooled to control the temperature of the fluid dispensed therefrom. The heating/cooling in the arm conduit provides the advantage that the fluid does not have time to cool down before being dispensed onto the substrate. Thus, the configuration works to improve the temperature-dependent deposition uniformity. Furthermore, in this embodiment the ends of the fluid dispensing arms 406, 408, ie the locations where the treatment fluid is dispensed, are movably positioned. At the same time, the spacing between the fluid dispensing portion of the dispensing arms 406, 408 and the substrate surface can be adjusted. This spacing works to minimize sputtering of the process solution and allows control over the positioning of the fluid dispensing operation on the production surface of the substrate.

FIG. 4 is a cross-sectional view of an exemplary pair of processing stations 402 , 404 . The cross-sectional view of FIG. 4 also shows the processing enclosure 302 as discussed above with respect to FIG. 2 , which defines first and second processing volumes 312 , 313 separated by a central inner wall 308 . Each processing station 402, 404 includes a substrate processing platen assembly 403 formed with a substantially horizontal upper surface configured to be positioned directly below a substrate during processing. Platen assembly 403 (which is also shown in the detailed cross-sectional view of FIG. 5A ) generally includes a fluid diffusion member 405 positioned above a substrate member 417 such that the fluid diffusion member 405 and substrate member 417 form a fluid flow therebetween. Volume 410.

Referring to FIGS. 4 and 5A , fluid supply conduit 409 is arranged in fluid communication with fluid volume 410 and fluid diffusion member 405 . In one aspect, a fluid source 409B such as a source of deionized (DI) water or an inert gas source is adapted to deliver fluid through fluid supply conduit 409 and into fluid volume 410 . In another aspect, fluid delivered from fluid source 409B may be heated by passing the fluid through fluid heater 409A before it enters fluid volume 410 . Fluid heater 409A is used to control the temperature of fluid delivered to fluid volume 410 . Fluid heater 409A may be any type of device that imparts energy to a temperature-controlled fluid. Preferably, the heater is a jacketed resistive heater (eg, the heater heats the fluid through introduction into the tube arm), rather than an immersion heater (eg, the heater element contacts the solution). A fluid heater 409A used in conjunction with the controller 111 and a temperature probe (not shown) may be used to ensure that the temperature of the fluid entering the fluid volume 410 is at the desired temperature.

In one aspect, an optional baffle 416 is attached to the base plate member 417 and positioned in the fluid volume 410 between the end of the fluid supply conduit 409 and the fluid diffusion member 405 . The baffles 416 are adapted such that the temperature controlled fluid delivered from the fluid source 409B and the fluid heater 409A is uniformly delivered to the fluid diffusion member 405 .

The substrate member 417 and the fluid diffusion member 405 may be made of ceramic materials such as fully pressed aluminum nitride, aluminum oxide Al ₂ O ₃ , silicon carbide (SiC), polymer coated materials such as Teflon ^™ polymer material coated aluminum or stainless steel), polymer materials, or other materials suitable for semiconductor fluid handling. Preferred polymer coatings or polymer materials are fluorinated polymers such as Tefzel (ETFE), Halar (ECTFE), perfluoroalkoxy resin (PFA), polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoro Propylene (FEP), polyvinylidene fluoride (PVDF), etc. A more detailed description of the construction, components, and operation of the fluid processing unit 500 of the present invention can be found in commonly assigned U.S. Patent Application No. .10/680,325, which is hereby incorporated by reference in its entirety (to the extent not inconsistent with the present invention).

Referring to FIG. 5A , in operation, substrate 401 is secured by support fingers 412 and positioned vertically directly above fluid diffusion member 405 . The space 450 between the fluid diffusion member 405 and the substrate 401 is filled with a temperature controlled fluid delivered from the fluid source 409B and the fluid heater 409A and distributed through the fluid supply conduit 409 and the fluid diffusion member 405 . The temperature controlled fluid contacts the backside of the substrate 401 and transfers heat thereto to heat the substrate. In this embodiment, the substrate is generally positioned in a parallel relationship to the upper surface of the fluid diffusion member 405, and is positioned between about 0.1 mm and about 15 mm from the upper surface of the fluid diffusion member 405, and more specifically, from the upper surface of the fluid diffusion member 405. The upper surface of member 405 is between about 0.5 mm and about 2 mm. In one aspect, the substrate 401 is rotated relative to the diffusion member 405 and the temperature controlled fluid flowing therefrom through the use of a support motor 443 ( FIG. 4 ) attached to the substrate support assembly 414 . Rotation of the substrate 401 relative to the fluid diffusion member 405 and the temperature controlled fluid may facilitate improved heat transfer between the temperature controlled fluid and the substrate 401 .

In another embodiment, the interior of the platen assembly 403 may include a heater 433 configured to increase the temperature of the platen assembly 403 to transfer heat to the substrate 401 being processed, the heater 433 may be resistively heated device. In one aspect, fluid supply 409B and fluid heater 409A can be configured to deliver a temperature-controlled fluid through fluid supply conduit 409 before the fluid contacts substrate 401 positioned on support finger 412 . In this configuration, the heaters (eg, elements 433 and 409A) can be in communication with the system controller 111 such that the system controller 111 can adjust the operation of the various heaters to control the temperature of the temperature-controlled fluid and the substrate being processed.

The fluid diffusion member 405 includes a plurality of holes 407 formed therethrough that connect the downstream side or top surface 453 of the fluid diffusion member 405 to the bottom surface or upstream side 405A of the fluid diffusion member 405 . The perimeter portion of the fluid diffusion member 405 is generally in sealing communication with the base plate member 417, and at the same time, fluid can be introduced into the fluid volume 410 through the fluid supply conduit 409, and acts as a source of back pressure in the sealed fluid volume 410 due to the introduction of the fluid. As a result, the fluid is allowed to flow uniformly through the holes formed in the fluid diffusion member 405 . The fluid volume 410 is then enclosed by the upstream side 405A of the fluid diffusion member 405 and the inner surface 417A of the substrate member 417 .

In one embodiment, the fluid diffusion member 405 may include between about 10 and about 200 holes 407, typically having a diameter between about 0.5 mm and about 15 mm, or more specifically, between about 0.7 mm and about 3 mm. diameter of. The holes 407 may be positioned vertically, or alternatively, at an angle relative to the top surface 453 of the fluid diffusion member 405 . The holes 407 may be positioned at an angle between about 5° and about 45° relative to the vertical to facilitate an outward fluid flow pattern over the surface of the fluid diffusion member 405 . Additionally, the angled holes 407 may be configured to reduce fluid turbulence.

FIG. 5B illustrates another embodiment of a fluid diffusion member 405 having a plurality of faceted holes 452 and shoulders 451 to improve the uniformity of temperature controlled fluid distribution over the substrate surface positioned on support fingers 412 . In one embodiment, as shown in FIGS. 5B-D , multi-faceted aperture 452 has an inlet portion 452A having a diameter (designated D ₁ in FIG. 5C ) that is smaller than the diameter of outlet portion 452B (designated D ₂ in FIG. 5C ). In this configuration, the small inlet portion 452A of the multi-faceted hole 452 is sized to restrict flow through the multi-faceted hole 452 to improve flow uniformity over the surface of the fluid diffusion member 405 and the substrate. The outlet portion 452B (labeled D ₂ ) is larger than the inlet portion 452A (labeled D ₁ ) to reduce the velocity of the temperature-controlled fluid exiting the outlet portion 452B and also reduce the top surface 453 of the fluid diffusion member 405 ( FIG. 5C ). or the surface area on the downstream side. It has been found that reducing the surface area of the top surface 453 is advantageous because it reduces the chance of forming regions (or "dry regions") on the backside of the substrate that are not in contact with the flowing temperature-controlled fluid. It is believed that the formation of these "dry regions" is influenced by the surface tension of the flowing temperature controlled fluid and the ability of the temperature controlled fluid to "wet" the substrate surface and/or the top surface 453 of the fluid diffusion member 405 . In one aspect, it is desirable to roughen the top surface 453 of the fluid diffusion member 405 to a surface roughness ( _Ra ) of between about 1.6 micrometers (μm) and about 20 micrometers (μm) to enhance fluid "wetting" capacity of the top surface. If the "dry area" is large enough, the temperature uniformity over the substrate will be affected by insufficient heat transfer from the temperature controlled fluid to the substrate, and thus affect the deposition process results. In one aspect, the top surface 453 is roughened by using bead blasting or grit blasting. While the above discussion describes the use of pores having a "diameter", other embodiments of multi-faceted pores contemplate the use of other shaped regions (e.g., square, octagonal, etc.), which may have a constant or Varying cross section. According to one aspect of the invention, the shape and size of multi-faceted pores 452 can be varied across the surface of diffusion member 405 to achieve desired fluid coverage, heat transfer distribution, and/or treatment results.

The abutment 451, or "protrusion," is a hoop-shaped ring that protrudes above the top surface 453 of the fluid diffusion member 405, and is typically used when the flowing temperature-controlled fluid (label "A" in FIG. 5B ) will exit the liner. The space 450 formed between the bottom and top surfaces 453 collects and restricts its flow. Accordingly, the abutment 451 serves to minimize or eliminate the formation of a "dry zone" as it allows the temperature controlled fluid exiting the multi-faceted holes 452 to collect before it flows through the abutment 451 . The abutment 451 is thus intended to hold the temperature controlled fluid, or to "pool" the temperature controlled fluid on the top surface 453 of the fluid diffusion member 405 . Referring to FIG. 5C , according to one aspect, abutment 451 protrudes above top surface 453 a distance "X" that is between about 0.5 mm and about 25 mm.

Figure 5C also illustrates an enlarged view of the edge of the cross-sectional view shown in Figure 5B. According to one aspect of the platen assembly 403, the outer diameter D3 (ie, the outer surface) of the shoulder 451 and the fluid diffusion member ₄₀₅ is smaller than the diameter of the substrate (labeled _D4 ). This configuration is desirable because it minimizes the chances of the fluid dispensed on the top surface of the substrate (labeled W ₁ ) coming into contact with the temperature-controlled fluid and will allow components in the fluid dispensed on the top surface of the substrate to avoid Contamination of the backside of the substrate (labeled W ₂ ).

5C illustrates one embodiment of a platen assembly 403 comprising multi-faceted holes 452 equally spaced a distance "L" with two features (inlet portion 452A and outlet portion 452B) as described above. As shown in FIG. 5C, the inlet portion 452A is _H1 in depth and the outlet portion 452B is _H2 in depth. FIG. 5D illustrates another embodiment of a fluid diffusion member 405 having multi-faceted holes 452 with surfaces (numbered 454A-C) that are not at right angles to each other to have a more gradual transition from inlet portion 452A to outlet portion 452B. transmission. For example, in one embodiment, it may be advantageous to create an angle of approximately 60 degrees between surface 454B and the centerline of the bore. The number of surfaces (454A-C as shown) and surface shapes (ie, linear or non-linear (eg, exponential, quadratic, etc.)) shown in Figure 5D are not intended to limit the scope of the invention. While Figures 5C-D illustrate multi-faceted pores with coaxial features (e.g., the features have a common axis of symmetry), other embodiments may have asymmetric features, or do not have a common center of symmetry, without departing from the present invention. Basic scope of the invention.

FIG. 5E illustrates an isometric cross-sectional view of deck assembly 403 illustrating one embodiment of a multi-faceted aperture pattern on fluid diffusion member 405 . In one embodiment, as shown in FIG. 5E , the pattern of multi-faced holes 452 is arranged as a pattern of square holes (eg, L ₁ by L ₁ ). In other embodiments, the fluid diffusion member 405 may have a fan shape, a quarter circle, or an entire surface with an array of holes arranged in a hexagonal dense pattern (i.e., a cyclic pattern in which a single hole is surrounded by six equally spaced holes). , rectangular hole patterns, radially symmetrical hole patterns, and/or other non-uniform hole patterns that enhance or modulate the temperature distribution over the substrate to increase the uniformity of the electroless deposition process over the substrate surface.

FIG. 5F illustrates a cross-sectional view of one embodiment of a platen assembly 403 that divides the fluid volume 410 into two regions capable of delivering one or more temperature-controlled fluids at different temperatures to the fluid diffusion member 405 and liner. In the space 450 between the bottom 401. This configuration can facilitate achieving a desired temperature distribution over the substrate, and thus a desired electroless deposition result. In this configuration, the deck assembly 403 may include a first zone hardware component 447 and a second zone hardware component 448 . The first zone hardware assembly 447 may include a first fluid supply conduit 446A, a first fluid heater 446B, a first fluid source 446C, and a first base member 446D. The second zone hardware assembly 448 may include a second fluid supply conduit 445A, a second fluid heater 445B, a second fluid source 445C, and a second base member 445D. In the configuration shown in FIG. 5F, the second base member 445D is the base member 417 shown in FIGS. 5A and 7 . In one aspect, first region hardware assembly 447 is configured to deliver a first temperature-controlled fluid (labeled "B") to substrate 401 positioned on support finger 412, while second region hardware assembly 448 is configured to deliver a second A temperature controlled fluid (labeled "A") is delivered to the substrate 401 positioned on the support fingers 412, wherein the first and second temperature controlled fluids are at different temperatures. In another embodiment of the invention, the interior of the platen assembly 403 may include one or more resistive heaters (not shown) adapted to enhance the first base member 446D and/or the first zone hardware assembly 447 Or the temperature of the second base member 445D of the second zone hardware component 448 . In this configuration, the heaters (e.g., resistive heaters, element 445B, element 446B) are in communication with the system controller 111 so that the system controller 111 can adjust the operation of the individual heaters to control the temperature controlled fluid and the fluid being processed. temperature of the substrate. While FIG. 5F illustrates one embodiment of a platen assembly 403 comprising two regions, in other embodiments of the invention it may be desired to divide the fluid volume 410 into three or more separable regions. The area that controls the temperature of the fluid in contact with the substrate. In one aspect, separate heated fluids are supplied to different regions of the backside of the substrate via individual or groups of holes 407, thereby providing for greater control of the substrate as a result of the positioning of each hole 407 and the temperature of the heated fluid flowing through each hole 407. control of temperature fluctuations above. For example, this embodiment may be used to generate elevated temperatures to the center or near the edges of a substrate during processing.

In another embodiment of the invention, fluid diffusion member 405 may comprise a porous material (eg, porous ceramic) configured to allow fluid to flow therethrough. In one aspect, the porous ceramic material is, for example, an aluminum oxide material. In this embodiment, holes 407 are generally not required; however, the inventors have contemplated implementing some holes 407 in conjunction with porous fluid diffusion member 405 to enhance fluid flow when desired. In one aspect, fluid diffusion member 405 may comprise a porous plastic material such as polyethylene, polypropylene, PVDF, PTFE, Teflon, or other compatible porous plastic material. Plastic materials having a hydrophilic surface can be beneficial in promoting "wetting" of the surface of the fluid diffusion member 405 .

In one embodiment, the fluid diffusion member 405 is designed with pores ranging in size from about 0.1 microns to about 500 microns. Since the resistance to fluid flow through the fluid diffusion member 405 is a function of the distance the fluid flows through the flowing fluid diffusion member 405, the vertical height of the fluid diffusion member 405 can be varied to provide the desired fluid flow characteristics.

Referring to Figures 4 and 7, the process of positioning a substrate for processing involves moving a lift assembly 413 between a loading position and a processing position. In the left processing station 402 of FIG. 4 , the lift assembly 413 is shown in a loading position with the lift assembly in a vertical position such that the support fingers 412 extend above the upper capture ring 418 . In this position, the dispense arm 406 is vertically spaced above the support fingers 412 to allow loading of the substrate 401 . Dispensing arm 406 (and other fluid dispensing arms of an electroless deposition system) includes a stationary base member 426 that telescopically receives an upper arm member 425 . Driving the motor telescopically moves the upper arm member 425 relative to the base member 426 to adjust the vertical position of the dispensing arm 406 . Substrate 401 is positioned by main rack robot 120 or substrate transfer shuttle 305 over support fingers 412 , which can then be actuated vertically to remove substrate 401 from each robot 120 /shuttle 305 . Once the substrate 401 is supported by the support fingers 412 above the robot 120/shuttle 305, the robot 120/shuttle 305 may be removed from under the substrate 401 and the support fingers 412 may be lowered into a processing position.

In the right processing station 404 of FIG. 4 , a lift assembly 413 is shown in the processing position, which is vertically positioned such that the support fingers 412 position the substrate 401 near one of the capture rings 418 , 419 vertically. straight position. As shown at processing station 404 of FIG. 4 , in the processing position, fluid distribution arm 408 is lowered and positioned near the upper surface of substrate 401 . Lift assembly 413 is generally actuated vertically by powered jack screw assembly 427 configured to vertically actuate lift assembly 413 and components attached thereto. More specifically, the lower portion of the fluid handling unit is attached to and moves in conjunction with the lift assembly 413 . The lower portion of the processing unit generally includes a substrate support assembly 414 (which includes support fingers 412 and ring 411 ), lower interleaving walls 424 and exhaust ports 314 .

Referring to FIGS. 4 and 7 , in one embodiment, the deck assembly 403 remains stationary and does not move with the components of the lift assembly 413 (eg, support fingers 412 , ring 411 ). In this configuration, substrate support 442 connected to substrate member 417 and fluid diffusion member 405 is mounted to main chassis 113 by one or more structural supports (not shown). Thus, in this embodiment, substrate support 442 , substrate member 417 , and fluid diffusion member 405 do not translate when substrate lift assembly 413 lifts substrate support assembly 414 and do not rotate when support motor 443 rotates substrate support assembly 414 . In one aspect, the substrate support assembly 414 is aligned to the substrate support 442 using one or more bearings (not shown, see elements 1054A-B of FIG. and guide components of the substrate support assembly 414 . This embodiment is advantageous because requiring the substrate member 417 and fluid diffusion member 405 to rotate would require the use of a generally unreliable and particle-generating rotating fluid seal (not shown), which could compromise device productivity. In one aspect, substrate support 442 also houses electrical leads (not shown) and one or more fluid supply conduits 409 (FIGS. 5A and 7).

Referring to FIG. 6 , substrate support assembly 414 generally includes support fingers 412 , vertical column members 415 , substrate support surface 415A, and ring 411 . A substrate placed on the substrate support surface 415A is gripped or held by the vertical column members 415 . In one aspect of the invention, substrate support assembly 414 is designed such that thermal expansion of the various components will not affect the ability of substrate support assembly 414 to grip a substrate resting on substrate support surface 415A. Thermal expansion of the substrate support assembly 414 may cause misalignment and/or damage to substrates placed between the vertical column members 415 . One way to reduce thermal expansion is to design the substrate support assembly 414 using a material with a lower coefficient of thermal expansion, such as tungsten, aluminum, or boron carbide. In another aspect, ring 411 may be designed with a geometry that minimizes movement of support fingers 412 and vertical post members 415 .

Referring to FIGS. 4 and 7 , the lower portion of each of the processing stations 402 , 404 includes a plurality of alternating wall assemblies 422 . Interleaving wall assembly 422 is configured to move in cooperation with lift assembly 413 between a loading position, shown at position 402 of FIG. 4 , and a processing position, shown at position 404 of FIG. 4 . Staggered wall assembly 422 generally includes an upper staggered wall 423 rigidly attached to main frame 113 and a lower staggered wall 424 attached to lift assembly 413 and configured to move therewith. The lower intersecting walls 424 (specifically, the innermost pair of intersecting walls 424 positioned closest to the unit) may be filled with a fluid, such as deionized water, which acts to seal the processing stations 402, 404 from outside the environment of the sealed environment. the lower part. For example, deionized water is typically continuously supplied to the space between lower alternating walls 424 by a conventional "drip" mechanism. The use of a fluid-tight interleaved wall assembly 422 allows the processing stations 402, 404 of the present invention to form a reliable seal and also removes the need for a single seal 428 to seal as the structure rotates and moves in a linear fashion. In conventional applications, it is common to use seals that act as both rotary and linear seals, positioned on a common guide shaft. The staggered wall assembly 422 allows the seal 428 shown in FIG. 7 to be used as a rotary seal only, rather than a combination of a rotary seal and a vertical sliding seal, which is often difficult to operate reliably in fluid handling systems.

As mentioned above, as shown in FIGS. 4 , 5 and 7 , each of the stages 402 , 404 may also include an upper fluid capture ring 418 and a lower fluid capture ring 419 . Each capture ring 418 , 419 generally includes a ring-shaped member extending inwardly and upwardly from the inner wall of each stage 402 , 404 . The rings 418, 419 may be attached to the inner wall of the unit or may be an integral part of the inner wall of the unit. The inner end edges 421a, 421b of the capture rings 418, 419 are generally formed to have a size that is between about 5 mm and about 50 mm larger in diameter than the diameter of the substrate 401 being processed. Simultaneously, the substrate 401 may be raised and lowered vertically through the respective rings 418, 419 during processing. In addition, each of capture rings 418, 419 also includes drain channels 420a, 420b, respectively, configured to collect treatment fluid that falls on fluid capture rings 418, 419 (FIG. 7). As shown in FIG. 7 , the drains 420 a , 420 b communicate with the drain port 314 . The discharge port 314 is connected to a separation box 429 (FIG. 4) where gas and fluid can be separated from each other. The split case 429 includes an exhaust port 430 positioned on the upper portion of the split case 429 and a liquid drain 431 positioned on the lower portion of the case. Separation cartridge 429 also includes recovery port 432 (FIG. 4) configured to deliver process fluid accumulated in drain channel 420a of capture ring 418 or drain channel 420b of capture ring 419 to a regeneration device (not shown) for use in for collection and reuse.

Referring to FIG. 7 , capture rings 418 and 419 are configured to allow fluid processing of substrate 401 at multiple vertical positions within each of processing stations 402 , 404 . For example, in one position, the substrate 401 may be arranged such that the upper surface of the substrate 401 is positioned slightly above the end edge 421a of the upper capture ring 418 for the first fluid handling step. In this configuration, the first process fluid can be dispensed onto the substrate 401 via the dispensing arms 406, 408 while the substrate support assembly 414, and thus the substrate 401, is rotated using the support motor 443 at a rate between about 5 rpm and about 120 rpm. The rotation of the substrate 401 causes the fluid dispensed onto the substrate to flow radially away from the substrate. As the fluid flows over the edge of the substrate, it travels outward and downward and is received on upper capture ring 418 . Fluid may be received by drain 420a and sent to recovery port 432 or recycled for subsequent disposal if desired. Once the first fluid handling step is complete, the substrate 401 can be moved vertically to a second processing position with the upper surface of the substrate 401 positioned slightly above the end edge 412b of the lower fluid capture ring 419 for the second fluid handling step . The substrate 401 is processed in this configuration in a similar manner to the first fluid processing step, and the fluid used in processing may be collected by drain 420b. An advantage of this configuration is that multiple fluid treatment chemistries can be used in a single treatment station. Furthermore, the fluid treatment chemicals may be compatible or incompatible, as separate fluid capture rings 418, 419 (each with separate drains 420a, 420b) allow for separate collection of incompatible treatment fluids.

Figure 8A illustrates a cross-sectional view of an exemplary fluid processing chamber 800 suitable for practicing various aspects of the present invention. The fluid treatment chamber 800 may be positioned at any of the treatment unit locations 102, 104, 106, 108, 110, 112, 114, 116 shown in FIG. Optionally, the fluid processing chamber 800 can be implemented as an independent sputtering unit, or combined with another substrate processing platform. The fluid treatment chamber 800 generally includes a treatment compartment 28 including a top (optional, not shown), side walls 10 and a base 27 . The pot 4 with its annular side wall and the hole 4A in the center of its bottom 4C is arranged approximately in the center of the base body 27 . The rotating shaft 13 is generally arranged in the hole 4A of the bowl 4 . A plurality of substrate support fingers 18 are connected to a shaft 13 positioned within the bore 4A of the basin 4 . The substrate support fingers are configured to hold the substrate W by friction or "snapping" the substrate by applying a vacuum to the backside _W2 of the substrate W. By using the linear slide 30 , the rotating shaft 13 and the substrate support fingers 18 can be raised or lowered relative to the basin 4 . When in the processing position, as shown in FIG. 8A , the substrate W clamped on the substrate support finger 18 is positioned by using the slide 30 so that the side wall top 4D of the basin 4 is aligned with the substrate backside W of the substrate W. ₂ to form an adjustable gap 33. Gap 33 is typically adjusted to restrict and control the flow of temperature-controlled fluid from fluid volume 25 formed between substrate backside W ₂ and basin 4 . Fluid source 3 delivers temperature controlled fluid to fluid volume 25 .

In one embodiment, the edge shoulder 1 is positioned radially outward of the substrate W perimeter. The edge abutment 1 is generally a continuous coiled ring circumscribing the substrate W, which may be attached directly to the side wall 10 (as shown in FIG. Lift assembly 2 vertically. The edge shoulder 1 is generally configured to hold a volume of fluid delivered from the fluid dispensing port 26 onto the processing surface W ₁ of the substrate W . In one aspect, the processing surface _W1 of the substrate W and the inner wall 1A of the edge shoulder 1 define a fluid volume region 29 in which fluid retained on the processing surface W1 collects. In one aspect, the edge abutment 1 is configured to have an inner diameter that is larger than the outer diameter of the substrate W such that a gap 32 is formed between the perimeter of the substrate W and the inner wall of the edge abutment 1 . The gap 32 is generally dimensioned to minimize the amount of fluid flowing through the gap 32 due to its size and the surface tension between the substrate W, the edge shoulder 1 and the fluid volume region 29 held therein.

In one aspect, the edge shoulder 1 is used to allow fluid to collect on the processing surface W _{of the} substrate, prevent the fluid from contaminating the substrate backside W of the substrate _W , and limit the consumption of processing solution dispensed into the fluid volume region 29 . In one aspect, gap 32 may be between about 0.5 mm and about 2 mm.

In one embodiment, the edge abutment 1 can be raised or lowered by a vertical lifting assembly 2 adapted to position the edge abutment 1 in two or more vertical positions. The vertical lift assembly 2 may be a conventional pneumatic actuator or a DC servo motor attached to a lead screw (not shown). In one aspect, the raising or lowering of the edge abutment can be used to adjust the amount of process fluid held in the fluid volume region 29 , and thus the amount of fluid located on the processing surface W ₁ of the substrate W . On the other hand, when the edge abutment 1 can be lowered so that the top of the edge abutment 1 is below the substrate W, or raised so that the bottom of the edge abutment 1 is higher than the substrate W, it is allowed to stay on the substrate W The fluid in W flows radially outward and away from the surface of the substrate W due to gravity or centrifugal force generated by rotating the substrate. When the edge abutment 1 is raised or lowered, other treatments such as cleaning treatment and drying treatment can also be carried out.

8C and 8D illustrate an embodiment of an edge shoulder 1 having an extension 1C positioned below a substrate W. FIG. In one aspect, the extension 1C extends inwardly from the inner wall 1A of the edge abutment 1 and thus gives the edge abutment 1 an "L" shaped cross-section. The extension 1C is generally configured to have an inner diameter smaller than the outer diameter of the substrate W. As shown in FIG. In one aspect, as shown in Figure 8C, the edge shoulder 1 is positioned to form a gap 32 to restrict the flow of fluid held in the fluid volume region 29 during processing.

In one aspect, as shown in FIG. 8D, the edge abutment 1 rises high enough that the extension 1C of the edge abutment 1 contacts the surface of the substrate W to allow a static "pool" of dispensing fluid to form on the substrate W ( Figure 8D). In another aspect, the extension 1C may be used to lift the substrate W off the substrate support fingers 18 to allow the substrate to be heated without the backside _W2 of the substrate being heated by the temperature-controlled fluid contained in the fluid volume 25. W for processing. On the other hand, by using the vertical lifting assembly 2, the edge abutment 1 can be lowered to a position such that the top of the edge abutment 1 is lower than the substrate W, so that the process fluid remaining on the substrate is can flow radially outward and away from the substrate W. When the edge abutment 1 is lowered, other treatments such as washing and drying treatments can also be carried out.

Referring to FIG. 8A , in general, three or more substrate support fingers 18 may be radially attached to the top of the rotating shaft 13 to support the substrate thereon. In one aspect, the three substrate support fingers 18 are evenly arranged in a radial orientation, ie, the fingers are separated by an angle of 120 degrees. The substrate support finger 18 generally has a central channel 17 that communicates with a spindle port 13A formed in the spindle 13 . In one aspect, the shaft port 13A and central passage 17 are in fluid communication with a vacuum source 15 such as a vacuum venturi. In this configuration, the substrate can be held in the seal 16 on the substrate support finger 18 by the pressure differential between the atmospheric pressure above the substrate processing surface _W1 and the vacuum generated by the vacuum source 15 in the central channel 17 (e.g. , O ring 16A, elastic diaphragm 16B). The use of a vacuum to hold the substrate can be used to prevent the substrate from slipping off the substrate support fingers while the substrate W and support fingers 18 are being rotated by the substrate support finger motor 20 and/or moved vertically by the substrate support lift assembly 50. 18.

FIG. 8E illustrates a more detailed view of the top end of substrate support finger 18 with O-ring 16A positioned thereon to support substrate W. FIG. The shape and material stiffness of the O-ring 16A can be optimized on a per substrate support finger 18 basis to compensate for flatness issues and surface irregularities that often occur in semiconductor wafers. A soft elastomeric seal with a large cross-sectional area and made of a "non-smooth" material (eg, Viton ^™ , buna-N, etc.) is ideal for the O-ring 16A. In this configuration, seal 16A serves as the primary seal when a vacuum has been applied by vacuum source 15 to hold substrate W to fingers 18 . O-ring 16A also prevents fluid held in fluid volume 25 from leaking into central channel 17 .

FIG. 8F illustrates another embodiment of the substrate support fingers 18 that hold the substrate on the resilient membrane 16B. In this configuration, a resilient membrane 16B may be positioned on each of the substrate support fingers 18 to provide a fluid-tight seal on the ends of the substrate support fingers 18 , thereby preventing fluid from entering the vacuum source 15 . The elastic membrane 16B is adapted to retain a substrate positioned thereon by use of the sub-atmospheric pressure or vacuum created in the region 16F formed between the substrate backside _W2 and the upper surface 16C of the elastic membrane 16B. The aforementioned sub-atmospheric pressure or vacuum is formed when the elastic membrane 16B is deformed (eg, stretched or distorted) by using a vacuum source to create a sub-atmospheric pressure behind the back side 16D of the elastic membrane 16B. The deformation of the elastic membrane 16B causes a "vacuum" to be formed between the substrate backside _W2 and the seal formed between the contacts 16E on the upper surface 16C of the elastic membrane 16B. In general, it is desirable that the elastic diaphragm 16B be made of a soft and non-slippery material (eg, Viton ^™ , buna-N, etc.).

Referring to FIG. 8A , the fluid processing chamber 800 also includes a substrate support finger motor 20 connected to the shaft 13 and generally configured to rotate and support the substrate support fingers 18 and the shaft 13 . Rotary seal assembly 14 may be positioned to provide a rotary seal between shaft 13 and vacuum source 15 . Rotational motion is transmitted from the motor 20 to the substrate W through the rotating shaft 13 and the substrate support fingers 18 . The rotational speed of the substrate support fingers 18 and the rotating shaft 13 may vary depending on the particular process being performed (eg deposition, cleaning and drying). In the case of deposition, the substrate support fingers may be adapted to rotate at a relatively low speed, eg between about 5 rpm and about 150 rpm, depending on the viscosity of the process fluid. During the cleaning process, the substrate support fingers 18 may be adapted to rotate at a relatively moderate speed, such as between about 5 rpm and about 1000 rpm. In the case of drying, the substrate support fingers 18 may be adapted to rotate at a relatively high speed, such as between about 500 rpm and about 3000 rpm, to spin dry the substrate W thereon.

The substrate support finger motor 20 may be connected to a substrate support lift assembly 50 , which generally includes a linear slide 30 coupled to a lead screw 31 and a substrate support lift motor 19 . In one arrangement, the substrate support lift motor 19 is a precision motor that transmits its rotational motion to the lead screw 31 . The rotational motion of the lead screw 31 is converted into a linear motion of the linear slide 30 which is transmitted to the rotary shaft 13 .

Referring to FIG. 8A , the basin 4 can be mounted to the base 27 with a plurality of bolt assemblies 12 . The shape of the basin 4 forms a fluid volume 25 which is in fluid communication with the fluid source 3 through one or more inlets 4B on the bottom of the basin 4 . Fluid source 3 may be adapted to deliver a fluid such as heated DI water. In one aspect, fluid source 3 causes fluid to flow through one or more inlets 4B, then through fluid volume 25 and then over sidewall top 4D of basin 4 . In one aspect, the substrate W is positioned such that a gap 33 is formed between the substrate backside _W2 and the sidewall top 4D of the basin 4 to ensure a clear communication between the substrate backside _W2 and the fluid delivered or flowing from the fluid source 3. touch. Gap 33 is sized to allow fluid flow over sidewall top 4D (see arrow labeled "A") and to ensure fluid contact with substrate backside _W2 . In one aspect, basin 4 is configured to generate and maintain a fluid at a uniform temperature within fluid volume 25, particularly near substrate backside _W2 . Typically, this is achieved by optimizing the size and shape of fluid volume 25 and/or positioning one or more inlets away from substrate backside _W2 . The optimal size of the fluid volume 25 to achieve uniform substrate temperature may vary with the type of fluid delivered to the fluid volume 25, the flow of the fluid through the fluid volume 25, the set temperature point of the fluid, the physical dimensions of the substrate support fingers 18, And the rotation speed of the substrate support finger 18 changes. The rotation of the substrate support fingers 18 may also be adapted to maintain a turbulent flow in the fluid volume 25 since the laminar flow regime already exhibits poor heat transfer properties. In one aspect, fluid delivered to fluid volume 25 is temperature controlled through use of fluid heater 41 . The fluid heater 41 may comprise an in-line fluid heater 42 attached to the fluid source 3 and/or a heating element 43 attached or embedded in the basin 4 .

In one aspect, the outward flow of fluid from fluid source 3 through gap 33 is designed to prevent or minimize process fluid flowing out of fluid volume region 29 from undesirably contacting the backside of substrate W. Preventing contact between the process fluid and the backside of the substrate will prevent deposition of particulates or unwanted materials on the backside of the substrate, which can affect the yield of semiconductor devices.

In one embodiment, a gap 5 may be configured between the shaft 13 and the hole 4A of the bowl 4 to allow rotational movement of the shaft 13 relative to the bowl 4 . The gap 5 may be between about 0.1 mm and about 0.5 mm wide. However, larger or smaller gaps can also be used. A catch member 9 with a hole 9A is positioned below the basin 4 and surrounds the axis of rotation 13 . Inside the capture member 9 a labyrinth seal is formed between the shield 7 and the capture member 9 . A labyrinth seal is generally defined as a set of stacked features (ie elements 7 and 9 in Figure 8A) that prevent fluid flow through the seal due to the geometry and configuration of the stacked features. Fluid flowing through the gap 5 is collected by the catch member 9 in the collection area 8 and then directed to the drain 6 located near the bottom of the catch member 9 . Alternatively, a seal could be used between the shaft 13 and the bore 4 of the basin 4, removing the need for a labyrinth seal.

The edge abutment 1, basin 4, substrate support fingers 18 and shaft 13 may be made of ceramic materials (e.g. fully pressurized aluminum nitride, aluminum oxide Al ₂ O ₃ , silicon carbide (SiC)), polymer coated materials (such as Teflon ^TM polymer-coated aluminum or stainless steel), polymer materials, or other materials suitable for semiconductor fluid processing. Preferred polymer coatings or polymer materials are fluorinated polymers such as Tefzel (ETFE), Halar (ECTFE), perfluoroalkoxy resin (PFA), polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoro Propylene (FEP), PVDF, etc.

The fluid treatment chamber 800 also comprises a perforated plate 11 which may be positioned above the base body 27 and between the side wall 4E of the basin 4 and the inner side of the side wall 10 . The side walls 4E of the basin 4 , the base 27 , the side walls 10 and the perforated plate 11 delimit a compartment 34 . Compartment 34 is in fluid communication with processing compartment 28 through a plurality of holes 11A in perforated plate 11 . Drain port 24 is generally positioned in base body 27 and connects to drain port 21 , which may be connected to a conventional wash drain system 23 and drain channel 22 .

In one aspect, during the deposition process, oxygen in process chamber 28 is controlled by delivering a process gas such as nitrogen, helium, hydrogen, argon, and/or mixtures of these gases, or other gases commonly used in semiconductor processing. or other gases. Process gas may be introduced into the process compartment 28 through a HEPA-type filter system (see FIG. 2 , element 313 ) and exhausted from the exhaust port 21 . The perforated plate 11 having the plurality of holes 11A formed therethrough improves the uniformity of the process gas flowing through the process compartment 28 .

The flow processing chamber 800 also includes a fluid dispensing port 26 configured to dispense a processing fluid onto the substrate W when the substrate W is positioned on the substrate support fingers 18 . Fluid distribution port 26, similar to fluid introduction system 1200 (discussed below in FIGS. 9, 9A, 9B, etc.), typically communicates with at least one fluid supply source (e.g., , solution sources 1202, 1204, 1206 shown in FIG. 9) are in fluid communication. Simultaneously, various chemicals may be mixed and supplied from fluid dispensing port 26 to effectuate various electroless plating processes as discussed below.

system operation

In operation, embodiments of the system 100 of the present invention may be used to perform electroless pre-cleaning processes, electroless activation processes, electroless plating processes, electroless post-plating cleaning processes, and/or may be used in other processes in electroless plating processes step. An exemplary process sequence for performing an electroless plating process using an embodiment of the present invention will now be described for the embodiments of the present invention described herein. An electroless plating process typically begins with insertion of a substrate into a closed process enclosure 302 (see FIG. 2 ). The insertion process generally includes opening the valved access port 304 and inserting the substrate 401 into the processing enclosure 302 with the main rack robot 120 . The substrate 401 is inserted in an upward facing orientation (ie, the surface to be plated of the substrate 401 faces upward).

Once the substrate is inserted into the closed processing enclosure 302 , the main chassis robot 120 positions the substrate on the support fingers 412 in the processing station 404 and the main chassis robot 120 is retracted from the processing enclosure 302 . The support fingers 412 can then position the substrate 401 vertically for processing while the valved access port 304 is closed. During the insertion process, ie, during the time period when the valved access port 304 is open, the gas supply in the environmental control assembly 315 is "on" and is caused to fill the closed process enclosure 302 with an inert gas. The process of flowing an inert gas into the process volume causes the process gas to flow outward through the access port 304, which is configured to prevent the entry of ambient gases, particularly oxygen, into the closed process enclosure 302, since oxygen is a well known substrate for plating materials (and specifically , for copper) having a deleterious effect (oxidation). The flow of process gas continues after the valved access port 304 is closed and typically begins before the valved access port 304 is opened. The flow of process gas continues during the electroless cleaning, activation, and plating sequences, and once the valved access port 304 is closed, the exhaust port 314, air vent, and/or vacuum pump can be used to maintain the desired process within the closed process enclosure 302 pressure. A combination of gas supply, HEPA filter and exhaust port 314 is used to control the oxygen content in the closed process enclosure 302 during specific process steps, i.e., the process can be controlled and optimized for each different process step if desired Oxygen content in enclosure 302.

Once the substrate is positioned in the processing unit, the electroless plating process of the present invention will generally begin with a substrate pre-cleaning process. The pre-clean process begins with positioning the upper surface of the substrate slightly above the end edge 421a of the upper capture ring 418, typically between about 2 mm and about 10 mm. The cleaning process is achieved via a cleaning solution dispensed onto the substrate surface by the dispensing arm 406 . Cleaning solutions can be dispensed onto the substrate surface during drop processing to save processing time and increase cell throughput. Depending on the desired cleaning properties, the cleaning solution can be acidic or alkaline, and the temperature of the cleaning solution can be controlled (heated or cooled) depending on the treatment method. Additionally, cleaning solutions may include surface active additives. The rotation of the substrate (typically between about 10 rpm and about 60 rpm) causes the cleaning solution to flow radially outward away from the substrate and onto upper capture ring 418 where it is collected and delivered to drain 420a, and then Flows via discharge port 314 to separation box 429 for separation and recycling as required.

Once the substrate has been cleaned, the substrate surface is typically rinsed. The cleaning process involves dispensing a cleaning solution, such as deionized water, onto the substrate surface while the substrate is being rotated. The cleaning solution is dispensed at a flow rate and temperature set to effectively remove any residual cleaning liquid from the substrate surface. The substrate is rotated at a rate sufficient to force the cleaning solution off the substrate surface, ie, for example, between about 5 rpm and about 120 rpm.

Once the substrate has been cleaned, a second cleaning step may be employed. More specifically, the substrate surface is first treated with an acidic conditioning rinse solution prior to an activation step, which typically includes applying an acidic activation solution to the substrate surface. Conditioning cleaning solutions typically include an acid, such as that used in activation solutions, that works to condition the substrate surface with the application of the acidic activation solution. Exemplary acids that can be used to condition the solution include nitric acid, chlorine acid, methanesulfonic acid, and other acids commonly used in electroless activation solutions. The substrate conditioning process can be performed at the processing position adjacent to the upper capture ring 418, or the substrate can be lowered to the processing position adjacent to the lower capture ring 419, depending on the chemistry used for the conditioning process and the Compatibility of pre-cleaning chemicals.

Once the substrate has been conditioned, an activation solution is applied to the substrate surface with the substrate positioned adjacent to the lower capture ring 419 . The activation solution is typically used as a catalyst for subsequent deposition processes and/or as an adhesion promoter between the substrate surface and a subsequently deposited layer. The activation solution is dispensed onto the substrate by arms 408 and is caused to flow radially outward over the edge of the substrate and onto capture ring 419 as a result of the rotation of the substrate. The activation solution is then collected by drain 420 for recirculation. Activation solutions typically include palladium based solutions with an acid base. The backside substrate surface (which is generally circular and similar in diameter to the fluid diffusion member 405 ) is typically positioned between about 0.5 mm and about 10 mm from the upper surface of the fluid diffusion member 405 during the activation step. The space between the backside of the substrate and the fluid diffusion member 405 is filled with a temperature controlled fluid, which may be deionized water dispensed from holes 407 formed in the fluid diffusion member 405 . A temperature controlled fluid (typically a heated fluid, but could also be a cooling fluid) dispensed from the holes 407 contacts the backside of the substrate and transfers heat from the fluid to the substrate or from the substrate to the fluid for heating/cooling for processed substrate. The temperature controlled fluid may be supplied continuously, or alternatively, a predetermined amount of fluid may be supplied and then the fluid supply stopped. The flow of a temperature controlled fluid contacting the backside of the substrate can be controlled to maintain a constant substrate temperature during the activation process. Additionally, the substrate may be rotated at between about 10 rpm and about 100 rpm during the activation process to aid in uniform heating/cooling and fluid distribution.

Once the substrate surface has been activated, additional rinse and/or cleaning solutions may be applied to the substrate surface to remove the activation solution therefrom. The first washing and/or cleaning solution that may be used after activation comprises another acid, preferably chosen to match the acid of the activation solution. After the acid post-rinse, the substrate may also be rinsed with a neutral solution such as deionized water to remove any residual acid from the substrate surface. Post-activation cleaning and cleaning steps can be performed in either the upper or lower processing position, depending on the compatibility of the chemical formulations.

When the activation step is complete, the substrate may be transferred from the electroless activation station 402 to the deposition station 404 by the substrate transfer shuttle 305 . The transfer process includes raising the substrate off the electroless activation station 402 with the support fingers 412, moving the substrate transfer shuttle 305 below the substrate, lowering the substrate onto the substrate transfer shuttle 305, and removing the substrate from the The plating activation station 402 is transported to the deposition station 404 . Once the substrate is in the deposition station 404, the substrate support fingers 412 for the deposition station 404 may be used to remove the substrate from the substrate transfer shuttle 305 and position the substrate for processing.

Positioning of the substrate typically includes positioning the substrate near upper capture ring 418 for pre-cleaning processing. The pre-cleaning process includes dispensing a pre-cleaning solution onto the substrate with arm 408, wherein the pre-cleaning solution is typically selected to have a similar pH to the subsequently applied electroless plating solution so that the pre-cleaning solution can condition the substrate surface to deposit The pH of the solution. The pre-cleaning solution may be an alkaline solution having the same basis as the electroless deposition solution applied after the conditioning step. Pre-cleaning of the substrate surface with a solution having the same pH value as the plating solution also improves the wettability of the substrate surface for the deposition process. The pre-cleaning solution can be heated or cooled as required by the treatment method.

After the substrate surface has been conditioned by the alkaline solution, the next step in the electroless deposition process is to apply the plating solution to the substrate surface. Plating solutions typically include metals, such as cobalt, tungsten, and/or phosphorus, that are to be deposited onto the substrate surface as pure metals or alloys of several metals. Plating solutions are generally alkaline in pH and may include surfactants and/or reducing agents configured to aid in the electroless plating process. The substrate is typically lowered to a position slightly above the lower fluid capture ring 419 for the deposition step. Simultaneously, the deposition solution applied by arm 408 flows outwardly over the edge of the substrate and is received by capture ring 419 where it is collected by drain 420b for possible circulation. Additionally, the backside of the substrate is typically positioned between about 0.5 mm and about 10 mm, or between about 1 mm and about 5 mm, from the upper surface of the fluid diffusion member 405 during the deposition step. The space between the backside of the substrate and the fluid diffusion member 405 is filled with a temperature-controlled (typically heated) fluid, which may be deionized water dispensed through holes 407 formed in the fluid diffusion member 405 . The temperature controlled fluid dispensed from the holes 407 contacts the backside of the substrate and transfers heat from the fluid to the substrate to heat the substrate for the deposition process. The temperature controlled fluid is typically supplied continuously throughout the deposition process. The flow of a temperature controlled fluid contacting the backside of the substrate during the deposition process is controlled to maintain a constant substrate temperature during the deposition process. Additionally, the substrate may be rotated at between about 10 rpm and about 100 rpm during the deposition process to aid in uniform heating and spreading of the solution applied to the substrate surface.

Once the deposition process is complete, the substrate surface is typically cleaned in a post-deposition cleaning process that includes applying a post-deposition cleaning solution to the substrate. The post-deposition cleaning treatment can be performed at the upper or lower treatment position, depending on the compatibility of the treatment chemicals. The post-deposition cleaning solution typically includes an alkaline solution having about the same pH as the plating solution. The substrate is rotated during the cleaning process to force the cleaning solution away from the substrate surface. Once the cleaning process is complete, the substrate surface can be rinsed, eg, with deionized water, and spin-dried to remove any residual chemicals from the substrate surface. Alternatively, the substrate can be evaporated to dryness by applying a solvent with high vapor pressure (eg, acetone, ethanol, etc.).

In the exemplary system 100 of the present invention, processing unit locations 102 and 112 may be configured for electroless pre-cleaning, electroless activation, and post-electroless activation cleaning, while processing unit locations 104, 110 may be configured for electroless plating Deposition unit and electroless post-deposition cleaning unit. In this configuration, since each activation and deposition chemical is separated at the respective processing location, it is possible to recover the chemical from each process. Another advantage of this configuration is that because the processing space for the fluid processing unit locations 102, 104, 110, 112 is within the closed processing enclosure 302, substrates can be transferred from the activation solution to the electroless deposition solution in an inert environment . Additionally, during loading and processing, the process enclosure is filled with an inert gas while the interior of the closed process enclosure 302 has a substantially reduced oxygen percentage, for example, less than about 100 ppm oxygen, or more specifically, less than about 50 ppm oxygen , or further, less than about 10 ppm oxygen. The substantially reduced oxygen content, combined with the proximity and rapid transport (typically less than about 10 seconds) between the activation and plating cells, operates to prevent oxidation of the substrate surface between the activation and deposition steps, which is critical to conventional electroless plating. Systems are a major challenge.

The substrate position may change throughout the fluid handling steps of the present invention. More specifically, the vertical position of the substrate relative to the fluid diffusion member 405 may vary. For example, the distance from the fluid diffusion member 405 can be increased to reduce the temperature of the substrate if desired during processing. Similarly, the substrate to fluid diffusion member 405 spacing may be reduced during processing to increase the temperature of the substrate.

Another advantage of embodiments of the present invention is that the system 100 can use compatible or incompatible chemical formulations. For example, in a process sequence utilizing incompatible chemistries such as an acidic activation solution and an alkaline plating solution, the acidic solution will typically be dedicated to one unit or station and the alkaline solution will be dedicated to the other. The units may be positioned adjacently, and substrates may be transported between the units by one of the shuttles 305 . The substrate is typically cleaned in each unit before being transferred to an adjacent unit, which prevents chemicals from one unit from contaminating another. In addition, multiple processing locations within each processing station or unit (e.g., positioning of capture rings 418, 419) allows for the use of incompatible chemicals within a single unit or station, since each chemical can be controlled by a different capture ring. 418, 419 gather and remain separated from each other.

Embodiments of the present invention are also configured as single-use chemical units, i.e., a single dose of processing chemistry can be used on a single substrate, and then discarded without solution recovery, i.e., no longer used to process other substrates . For example, system 100 may utilize a common unit to activate, clean, and/or post-treat substrates while using another unit for electroless deposition and/or post-deposition cleaning. Since each of these processes may utilize different chemicals, the unit is typically configured to supply each required chemical to the substrate as needed and to drain the used chemical therefrom once the process is complete. However, units are generally not configured to recover chemicals because of the serious contamination problems that would arise from recovering different chemicals from a single unit.

Other processing units that may be used in embodiments of the present invention may be found in commonly assigned U.S. Patent No. 6,258,223, entitled "In-Situ Electroless Copper Seed Layer Enhancement in an Electroplating System," issued July 10, 2001, and 12, 2001 Found in commonly assigned U.S. Patent Application No. 10/036,321, entitled "Electroless Plating System," filed on March 26, which is hereby incorporated by reference in its entirety (to the extent not inconsistent with the present invention) in this article.

jet distribution system

Figure 9 illustrates a side cross-sectional view of one embodiment of an upwardly facing fluid handling unit 1010, similar to the various stations 402, 404 described above. A face-up oriented substrate 1250 can be seen in FIG. 9 . While the various embodiments explained herein illustrate processing unit 1010 configured for fully face-up processing, the orientation of the substrate is not intended to limit the aspects of the invention. The term "electroless plating" (or electroless deposition process) is intended to comprehensively cover all process steps for depositing an electroless deposited film onto a substrate, including for example pre-cleaning process steps (substrate preparation steps), electroless activation One or more of a processing step, an electroless deposition step, and a post-deposition cleaning and/or rinsing step.

The fluid handling unit 1010 includes a unit body 1015 . The unit body 1015 can be made of various substances known to be non-reactive with fluid processing (electroless or electrochemical) solutions. These substances include plastics, polymers and ceramics. In the arrangement of FIG. 9 , unit cells 1015 define a circular or rectangular body forming side walls for unit 1010 . The unit body 1015 accommodates and supports the cover assembly 1033 at its upper end. The unit body 1015 is integrally provided with a bottom wall 1016 along its bottom end. The bottom wall 1016 has an opening for receiving a substrate support assembly 1299 . Features of the substrate support assembly 1299 are described below.

In one embodiment, the substrate support assembly 1299 generally includes a substrate member 1304 and a fluid diffusion member 1302 attached thereto. The substrate support assembly 1299 shown in FIGS. 9-12 illustrates another embodiment of the platen assembly 403 described above. A ring seal 1121 , such as an O-ring seal, is positioned near the perimeter of the fluid diffusion member 1302 . The ring seal 1121 is generally configured to mate with the outer top edge of the substrate member 1304 to create a fluid tight seal between the fluid diffusion member 1302 and the substrate member 1304 to facilitate the fluid delivery process.

The base plate member 1304 generally defines a solid disk-shaped member having a fluid inlet 1308 formed through its central portion or through another location on the base plate 1304 . The substrate member 1304 is preferably made of a ceramic material or coated metal. Polyvinylidene fluoride (PVDF) materials may also be used. A fluid volume 1310 is formed above the substrate member 1304 and below the fluid diffusion member 1302 . As such, the fluid diffusion member 1302 is positioned above the substrate member 1304 . Fluid volume 1310 typically has a spacing between fluid diffusion member 1302 and substrate member 1304 of between about 2 mm and about 15 mm; however, larger or smaller spacings may be used.

The fluid diffusion member 1302 includes a plurality of fluid channels 1306 formed therethrough, as discussed above in connection with FIGS. 4 , 5A-E and 7 . When in use, fluid is caused to flow from fluid inlet 1308 into sealed fluid volume 1310, then through fluid channels 1306 formed in fluid diffusion member 1302, and into heat transfer between the backside of substrate 1250 and fluid diffusion member 1302 in area 1312. In one aspect, fluid heater 1164 is used in conjunction with controller 111 and a temperature probe (not shown) to ensure that the temperature of the fluid entering heat transfer region 1312 from fluid source 1203 is at the desired temperature. In one aspect, fluid source 1203 is adapted to deliver deionized (DI) water. The presence of the heated fluid behind the substrate 1250 will in turn heat the backside of the substrate 1250 . A uniformly elevated substrate temperature facilitates electroless plating operations. Multiple heating coils 1112 may optionally be embedded in the substrate member 1304 and, if desired, individually controlled to more precisely control the temperature of the DI water flowing into the heat transfer region 1312 as well as the substrate temperature during processing. More specifically, individual control of the heating coils 1112 allows precise control of the substrate surface, which is quite important for electroless plating processes.

Referring to FIG. 9B , as an alternative to the heating arrangement described above, an optional heating coil 1112 may be removed from the substrate member 1304 and installed into the fluid diffusion member 1302 . To accommodate this modification, the substrate member 1304 may be thinner, while the geometry of the fluid diffusion member 1302 will be increased. As the deionized water flows through fluid inlet 1308 , it passes under heated fluid diffusion member 1302 , through fluid channel 1306 , and then into heat transfer region 1312 between the backside of substrate 1250 and fluid diffusion member 1302 . In this arrangement, the separate fluid heater 1164 may optionally be removed. Note that fluid channel 1306 may be configured to direct DI water against the backside of substrate 1250 . The presence of water on the backside of the substrate 1250 not only heats the substrate 1250 but also prevents the electroless plating fluid from undesirably contacting the backside of the substrate 1250 .

The substrate member 1304 and _the fluid diffusion member 1302 can be made of ceramic materials such as fully pressurized aluminum nitride, aluminum oxide _Al2O3 , silicon carbide (SiC), polymer coated materials such as Teflon ^™ polymer coated aluminum or stainless steel), polymer materials, or other materials suitable for semiconductor fluid handling. Preferred polymer coatings or polymer materials are fluorinated polymers such as Tefzel (ETFE), Halar (ECTFE), perfluoroalkoxy resin (PFA), polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoro Propylene (FEP), PVDF, etc.

A plurality of substrate support fingers 1300 are generally positioned about the perimeter of the fluid diffusion member 1302 . Substrate support fingers 1300 are configured to support substrate 1250 at a desired distance above fluid diffusion member 1302 to form heat transfer region 1312 . A robotic carriage (not shown) may be inserted under the substrate 1250 between the substrate support fingers 1300 to lift and remove the substrate 1250 during the substrate removal and/or insertion process. In an alternative configuration, a continuous ring (not shown) instead of substrate support fingers 1300 may be used to support the substrate. In this configuration, a lift pin assembly (not shown) may also be employed to lift the substrate from the continuous ring. In this way, the robotic carriage can again access the bottom of the substrate 1250 so that it can be transported into and out of the cell 1010 . The fluid handling unit 1010 also includes a tank 1108 . The slot defines an opening formed through sidewall 1015 to provide access for a robot (not shown) to deliver substrate 1250 to and retrieve substrate 1250 from cell 1010 .

In the unit 1010 configuration of FIG. 9, the substrate support assembly 1299 can be selectively axially translated and rotated about the substrate support 1301 by using the upper bearing 1054A and the lower bearing 1054B. To this end, the substrate lifting assembly 1060 is first provided. The substrate lift assembly 1060 includes a substrate support assembly motor 1062 . In one arrangement, the substrate support assembly motor 1062 is a precision motor that rotates the lead screw 1061 . Rotary motion of the support assembly motor 1062 is converted into linear motion of the finger slide 1064 . Finger slide 1064 is attached along slotted housing 1066 to drive the slide up and down. In this case, the support assembly motor 1062 is preferably electrically actuated. Alternatively, the substrate support assembly motor 1062 may be a pneumatically actuated air cylinder.

The substrate lift assembly 1060 also includes a substrate support finger motor 1052 . The finger motor 1052 rotates the substrate support fingers 1300 and the supported substrate 1250 . The substrate support fingers 1300 rotate about an axis formed by the non-rotating substrate support 1301 . The rotational speed of the substrate support fingers 1300 can vary depending on the particular process being performed (eg, deposition, cleaning, drying). In the case of deposition, the substrate support member may be adapted to rotate at a relatively low speed, such as between about 5 rpm and about 150 rpm, depending on the viscosity of the process fluid, thereby utilizing the fluid's inertia to spread the fluid over the surface of the substrate 1250. In the case of cleaning, the substrate support fingers 1300 may be adapted to rotate at a relatively moderate speed, such as between about 5 rpm and about 1000 rpm. In the case of drying, the substrate support may be adapted to spin at a relatively high speed, such as between about 500 rpm and about 3000 rpm, to spin dry the substrate 1250 .

Substrate support 1301 is mounted to chamber base or platform 1012 by base members 1013 and 1014 . Thus, in a preferred embodiment, the substrate member 1304 is not translated by the substrate lift assembly 1060 but serves as a guide for the substrate support fingers 1300 . An upper bearing 1054A and a lower bearing 1054B are provided to achieve this support. Substrate support 1301 also serves as conduits for electrical leads (not shown) and fluid inlets 1308 fed by tubing 1166 . Wires and tubing extend through substrate conduits 1305 in base member 1014 .

FIG. 9A shows a side cross-sectional view of the face-up electroless processing chamber of FIG. 9. FIG. In this view, the substrate lift assembly 1060 is in its raised position. The substrate 1250 is lifted off the surface of the substrate member 1304 to allow processing at the ambient temperature of the fluid handling unit 1010 since the substrate is not heated by the fluid in contact with the fluid volume 1310 and the substrate member 1304 . This is also where the substrate 1250 is typically placed before the robot comes in to pick up the processed substrate 1250 .

The fluid handling unit 1010 also includes a fluid introduction system 1200 . Fluid introduction system 1200 operates to deliver various processing fluids (eg, solution source 1202 , solution source 1204 , and solution source 1206 , etc.) to a receiving surface of substrate 1250 . The number of treatment fluids that can be used in the fluid treatment unit 1010 depends on the application and is likely to exceed the three shown in FIG. 9 . A metering pump 1208 is provided in connection with each solution source 1202 , 1204 , 1206 . Additionally, a dispensing valve 1209 is provided for controlling release of each solution source 1202 , 1204 , 1206 to a respective foreline 1210 . Treatment fluid from solution sources 1202 , 1204 , 1206 is selectively introduced into unit 1010 from foreline 1210 through inlet tube 1225 . As generally shown in FIG. 9 , dispense valve 1209 may be configured to purge foreline 1210 after chemical has been delivered from a treatment fluid source upstream of dispense valve 1209 . In one aspect, the inlet tube 1225 can be purged of any residual fluid by gas injection from the gas source 1207 connected to the inlet tube 1225 .

A filter 1162 is optionally incorporated into the fluid introduction system 1200 to prevent particulates generated upstream from the filter 1162 from contaminating the fluid handling unit 1010 and ultimately the substrate 1250 . In cases where the inlet line 1225 needs to be cleaned prior to removal of the substrate or between processing steps, the addition of the filter greatly increases the time to clean the line due to the larger surface area of the filter membrane, so the filter may not be used.

In another aspect of the invention, a heater 1161 is incorporated into the fluid introduction system 1200 to heat the fluid before it enters the treatment zone 1025 . The heater 1161 contemplated in the present invention may be any type of device that imparts energy to the treatment fluid. Preferably, the heater 1161 is a jacketed resistive heater (eg, the heater heats the fluid by being introduced into the tube wall), rather than an immersion heater (eg, the heater element contacts the solution). The heater 1161 used in conjunction with the controller 111 may be used to ensure that the temperature of the treatment fluid entering the treatment region 1025 of the fluid treatment unit 1010 is at the desired temperature.

In another aspect of the invention, the heater 1161 is a source of microwave power and propagates microwaves through the microwave resonator, which is used to rapidly impart energy to the treatment fluid. In one embodiment, the microwave power source operates at about 500W to 2000W at 2.54GHz. In one embodiment of a series microwave resonator heater, the temperature of the various solutions (eg, cleaning chemicals, rinse solutions, and post-cleaning solutions) is increased to optimal levels before they enter the processing unit. In one embodiment, two or more separate microwave heaters may be employed to selectively heat the separation fluid delivered in the separation fluid line from the fluid introduction system 1200 . Thus, when used, different fluids delivered from each solution source 1202, 1204, 1206 may be delivered to the surface of the substrate at different temperatures.

In another aspect of the invention, a fluid degassing unit 1170 is incorporated into the fluid introduction system 1200 to remove any gas entrained or dissolved in the treatment fluid before it enters the treatment region 1025 . Since dissolved oxygen tends to inhibit electroless deposition reactions, oxidize exposed metal surfaces, and affect etch rates during electroless cleaning processes, the use of a fluid degassing unit can help reduce any damage caused by the presence of dissolved oxygen in the process fluid. Corrosion and/or handling fluctuations. A fluid degassing unit is generally defined as any unit capable of separating dissolved gas from a solution (for example, by using a gas permeable membrane and a vacuum source). Fluid degassing units are commercially available, for example, from Mykrolis Corporation of Billerica, MA.

In one embodiment of fluid processing unit 1010 , as shown in FIGS. 9 , 9A and 9B , fluid introduction system 1200 is adapted to deliver one or more processing fluids to the surface of substrate 1250 through one or more nozzles 1402 . More specifically, processing fluid from solution sources 1202 , 1204 , 1206 is selectively delivered to the receiving surface of substrate 1250 via fluid delivery arm 1406 . A plurality of nozzles 1402 are formed along the fluid delivery arm 1406 . The nozzle 1402 receives fluid from the introduction tube 1225 and directs the process fluid at the receiving surface of the substrate 1250 . Nozzle 1402 may be disposed at the end of delivery arm 1406 or along the length of fluid delivery arm 1406 . In the arrangement of Figures 9, 9A and 9B, a pair of nozzles 1402 are arranged in an equidistant row. In one embodiment, one or more fluid introduction systems 1200 and/or nozzles 1402 are connected to dispensing arms 406 and/or 408 as shown in FIGS. 3 and 4 .

In the configuration of FIG. 9 , fluid delivery arm 1406 has a length such that the distal end extends beyond the center of substrate 1250 . Preferably, at least one of the nozzles 1402 is positioned at the distal end of the fluid delivery arm 1406 . It is also preferred that the fluid delivery arm 1406 is movable about a dispense arm motor 1404 adapted to pivot the fluid delivery arm 1406 closer to or away from the center of the substrate 1250 . In FIGS. 9 , 9A and 9B , fluid delivery arm 1406 pivots in response to movement of dispense arm motor 1404 . The dispense arm motor 1404 is preferably disposed behind a protective member 1410 to partially isolate the dispense arm motor 1404 from the chamber processing area 1025 .

In one embodiment, the fluid delivery arm 1406 is adapted to not only pivot, but also move axially (FIG. 9). Figure 9B shows a side cross-sectional view of the upward facing electroless plating process chamber of Figure 9 in an alternative embodiment. Here, the fluid delivery arm 1406 is connected to an axial motor 1080 (eg, a linear motor). Movement of the fluid delivery arm 1406 in the axial direction allows the fluid delivery arm 1406 to be selectively positioned closer to the substrate 1250 when desired.

FIG. 10 illustrates a top view of the face-up electroless processing chamber of FIG. 9 . Here, the fluid delivery arm 1406 of the fluid introduction system 1200 can be viewed relative to the mounted substrate 1250 . Four illustrative support fingers 1300 are shown as support substrate 1250 . In this view, fluid delivery arm 1406 is rotated away from substrate 1250 . This position allows lifting of the substrate 1350 using the lifting fingers 1300 by the substrate lifting assembly 1060 described above. Arrow 1004, however, indicates a rotational motion path for fluid delivery arm 1406, which illustrates that fluid delivery arm 1406 may rotate nozzle 1402 over a substrate during processing. In one aspect, rotational and/or vertical movement of the fluid delivery arm 1406 is accomplished during dispensing of the treatment fluid over the substrate surface to achieve uniformity and desired distribution of the treatment solution over the substrate surface. Rotational and/or vertical movement may be accomplished through the use of dispense arm motor 1404 and axial motor 1080 . Movement of the fluid delivery arm 1406 over the substrate 1250 can help increase the fluid uniformity and speed of coverage of the desired surface of the substrate 1250 . Preferably, the substrate support fingers 1300 and the substrate 1250 are rotated during dispensing of fluid from the nozzle 1402 to improve fluid distribution uniformity and system throughput.

In another embodiment, the process fluid is delivered through one or more nozzles arranged on the fluid delivery arm 1406 close to the axis of rotation of the substrate, and at the same time, a carrier gas (such as _N2 or argon) is delivered through the nozzles arranged on the fluid delivery arm 1406. Delivery on a nozzle positioned near the outer edge of the substrate. During fluid delivery operations, the substrate is preferably rotated. The implantation of the carrier gas around the edge of the substrate 1250 forms a gas layer around the processing region 1025 . The gas blanket displaces any residual _O2 that may linger within the treatment area. Those of ordinary skill in the art of electroless deposition processing will appreciate that oxygen can adversely affect certain processing steps, such as chemical activation steps.

In one embodiment, nozzle 1402 is an ultrasonic nozzle or "air atomizing nozzle." FIG. 13 shows a cross-sectional view of one design of an air atomizing nozzle 1402 . This is an internal fluid mixing nozzle. This means that the fluids are mixed internally to produce a fully atomized spray or mist of the treatment fluid. In this configuration, the carrier gas thus contains small droplets of the processing solution, which are directed towards the substrate surface. In one embodiment, the carrier gas is an inert gas, such as argon, nitrogen, or helium, used to deliver the atomized process fluid to the substrate surface.

In the nozzle design of FIG. 13 , nozzle 1402 includes a body 1426 and a tip 1424 . Tip 1424 typically has a diameter of about 10 μm to about 200 μm. In one embodiment, tip 1424 has a diameter of about 10 μm to about 50 μm. Fluid is delivered through tip 1424 due to suction caused by the venturi effect created when high pressure gas is delivered from nozzle gas supply 1244 . In the arrangement of Figure 13, the body 1426 is provided with separate channels 1422, 1420 for receiving separate liquid and gas flows, respectively. The fluid channel 1422 and the gas channel 1420 meet at the tip 1424, allowing the two flows to mix. This may be called a "concentric Venturi design". In this arrangement, the fluid dispensed from the nozzle 1402 is premixed to produce a fully atomized spray. The specific tip 1424 design of Figure 13 produces a round spray pattern. However, it should be understood that other tip configurations can be used to produce other spray patterns, such as flat or fan-shaped spray patterns.

Figure 14 provides a cross-sectional view of an air atomizing nozzle 1402 of a different design. This is the external fluid mixing nozzle. In the nozzle design of FIG. 14 , nozzle 1402 also includes a body 1426 and a tip 1424 . Tip 1424 is also typically about 10 μm to about 200 μm in diameter, or in another embodiment, about 10 μm to about 50 μm in diameter. In the arrangement of Figure 14, the body 1426 is also provided with separate channels 1422, 1420 for receiving separate liquid and gas flows, respectively. However, in this arrangement, fluid channel 1422 delivers liquid through nozzle 1402 independently of gas channel 1424 such that the two streams do not mix within body 1426 but outside tip 1424 . This may be called a "parallel Venturi design". This arrangement has the advantage of being able to control gas and liquid flow independently and is effective for higher velocity liquids and abrasive suspensions. This is in contrast to internal mixing nozzles 1402 where changes in gas flow will affect liquid flow.

In one aspect, the use of a conventional ultrasonic nozzle similar to the nozzles shown in FIGS. 13 and 14 is adapted to generate atomized droplets of treatment fluid that are directed at the receiving surface of the substrate. The direction of the droplets (as opposed to the liquid flow) is used to save expensive electroless treatment fluids. It also provides more uniform coverage over the receiving surface. Also, the hydrodynamic boundary layer created when the substrate 1250 is rotated by using the substrate support finger motor 1052 can improve the distribution of the atomized process fluid on the surface of the substrate 1250 because of the turbulence ( The shape of the turbulent boundary layer is usually flat or parallel to the substrate in any direction. The observed boundary layer effects of atomized treatment fluids are superior to conventional spray designs (which cause the fluid stream to impinge on the surface of the substrate) because they can be minimized by boundary layer control of the delivery of the atomized fluid to the substrate surface. A non-uniform spray pattern produced by one or more nozzles.

A fluid supply is provided for the fluid delivered to the nozzle 1402 . In Figures 13 and 14, a tank 1212 is shown. Tank 1212 includes fluid inlet 1218 and vent 1214 . The vent 1214 communicates with atmospheric pressure. Additionally, a fluid outlet 1216 is provided. During fluid delivery, gas from nozzle gas supply 1214 is delivered to nozzle 1402 at high velocity. This creates a relative negative pressure in fluid passage 1422 due to communication with atmospheric pressure through vent 1214 . Fluid is then forced through fluid outlet 1216 and into nozzle 1402 .

Typically, the processing fluid delivered from the fluid introduction system 1200 may be an activation solution, an electroless deposition solution, and/or a cleaning solution that is dispensed onto the substrate surface during processing. In one embodiment, the treatment fluid is an activation solution. Examples of activation solutions include palladium salts including chlorides, bromides, fluorides, fluoroborates, iodides, nitrates, sulfates, carbonyls, salts of metals, and combinations thereof. In one embodiment, the palladium salt is a chloride, such as palladium chloride (PdCl2). In another embodiment, the palladium salt is a nitrate, alkane sulfonate, or other soluble derivative of Pd ⁺² that contains a non-coordinating anion (and that does not readily form clusters in solution or on metal surfaces ). In one embodiment, the queue time (or wait time) between the end of application of the copper cleaning solution and the start of application of the activation solution is typically less than about 15 seconds, and preferably less than about 5 seconds. The activation solution typically operates to deposit a seed layer of activation metal onto the exposed copper of the exposed features. Since copper oxide is known to have a higher resistivity than copper, oxidation of exposed parts of the copper layer after its cleaning may be detrimental to subsequent steps. The short queue time between copper cleaning and activation minimizes oxidation, while, as mentioned above, the use of a carrier gas environment around the fluid handling unit can also help prevent oxidation of exposed portions of the copper layer.

In one embodiment, the treatment fluid is an electroless deposition solution. In one embodiment, an electroless deposited capping layer is deposited which is an alloy comprising CoP, CoWP, CoB, CoWB, CoWPB, NiB or NiWB, and preferably comprises CoWP or CoWPB. Depending on the coating material to be deposited, the electroless deposition solution used to form the coating may include one or more metal salts and one or more reducing agents. The electroless deposition solution may also include pH adjusting agents known in the art such as acids and bases. When the selected overburden layer contains cobalt, the electroless deposition solution typically includes a cobalt salt. Examples of cobalt salts include chloride, bromide, fluoride, acetate, fluoroborate, iodide, nitrate, sulfate, other strong or weak acid salts, and/or combinations thereof. Preferably, the cobalt salt comprises cobalt sulfate, cobalt chloride or combinations thereof. If a tungsten-containing capping material is to be deposited, the electroless deposition solution includes tungstate. Preferably, the tungstate comprises a salt of tungstate, such as ammonium tungstate or tetramethylammonium tungstate, or can be produced by neutralization of tungstate. If a nickel-containing capping material is to be deposited, the electroless plating solution typically includes a nickel salt. Examples of nickel salts include chloride, bromide, fluoride, acetate, fluoroborate, iodide, nitrate, sulfate, carbonyl, strong or weak acid salts, and/or combinations thereof.

When _the selected cover layer includes phosphorus, such as CoP, CoWP or CoWPB, the reducing agent preferably includes a phosphorus component, such as hypophosphite anion ( _H2PO2 ). If the capping material includes boron, eg, CoB, CoWB, CoWPB, the reducing agent typically includes a boron component, dimethylamine-borane (DMAB), a non-basic metal salt of borohydride anion (BH ₄ ⁻ ), or combinations thereof. Other reducing agents may also be used additionally or alternatively with the above reducing agents, such as hydrazine. In one embodiment, a borane cobalt reducing agent is used in the initializing process on copper.

As mentioned, the electroless deposition solution (processing fluid) and/or the substrate may be heated to a certain temperature. Exemplary temperatures are between about 40°C and about 95°C. In one aspect, heating the electroless deposition solution and/or the substrate structure increases the electroless deposition rate. This helps to compensate for the temperature drop experienced by the treatment fluid as it exits the nozzle 1402 . In one embodiment, the deposition rate of the capping material is about 100 A/min or faster. In one embodiment, the capping material is deposited to a thickness between about 100 Ȧ and about 300 Ȧ, preferably about 150 Ȧ to about 200 Ȧ. However, it is desirable to maintain the temperature across the substrate at a uniform temperature since the deposition rate of electroless plating processes is known to be temperature dependent. Meanwhile, the heating coil 1112 and/or the heater 1164 of the substrate member 1304 shown in FIG. 9 may be used.

The fluid handling unit 1010 also includes a fluid extraction system 1240 . Fluid extraction system 1240 generally includes an extraction line 1227 connected to drain 1249 . Optionally, more than one outlet line 1227 may be arranged around unit 1010 in order to drain fluid more evenly from unit 1010 . In Figure 10, it can be seen that four generally equidistantly spaced outlet lines 1227 are provided. Multiple outlet lines 1227 may be combined into a single drain plenum and drain 1249 . Drain 1249 then delivers chamber exhaust to a waste collection drain (not shown). In summary, processing fluid will generally flow through inlet tube 1225 , then through nozzle 1402 mounted on fluid delivery arm 1406 , then out through processing region 1025 toward substrate 1250 , and then out one or more fluid lines 1227 .

Fluid extraction system 1240 includes gas exhaust. Exhaust inlet 1246 extends through sidewall 1015 . Exhaust system 1248 draws gases out of processing region 1025 . In one embodiment, exhaust inlet 1246 is a ring/plenum that draws gas evenly below the surface of substrate 1250 to facilitate gas flow near the surface of substrate 1250 .

Figure 11 provides a side cross-sectional view of an upwardly facing fluid handling unit 1010 in an alternative embodiment. A fluid introduction system 1200 is also provided for delivering fluids to the receiving surface of the substrate 1250 . Treatment fluid is also delivered through one or more nozzles 1402 . However, in this embodiment, nozzles 1402 are disposed in perforated plate 1030 within chamber lid assembly 1033 .

Referring to FIGS. 9 , 9A-B, 11 and 11A-B, the chamber lid assembly 1033 first includes a perforated plate 1030 . Preferably, the porous plate 1030 is a plate having holes or pores formed therein to allow fluid flow therethrough. Exemplary materials for porous plates include ceramic materials (eg, alumina), polyethylene (PE), polypropylene, and PVDF in which pores are formed or fabricated to allow fluid exchange. In one embodiment, a HEPA filter arrangement may be employed. Typically, glass fibers rolled into a paper-like material are utilized as HEPA filters. The perforated plate 1030 in FIGS. 9 , 9A-B, 11 and 11A-B is supported by an upper support ring 1031 . The chamber lid assembly 1033 then generally includes a lid 1032 , an upper support ring 1031 and a perforated plate 1030 . Cover 1032 forms a plenum 1034 in the volume between cover assembly 1033 and perforated plate 1030 . In one aspect, multiwell plate 1030 is sealed to lid 1032 by using two O-ring seals (elements 1036 and 1037). In the arrangement of FIG. 11 , the cover 1032 is supported by both the perforated plate 1030 and the upper support ring 1031 .

In one embodiment of the cover assembly 1033, as shown in FIG. 11, the processing solution is delivered from the solution sources 1202, 1204, 1206 to the substrate 1250 through the inlet tube 1225, which extends through the cover 1032 and then branches to the multiwell plate 1030. One or more nozzles 1402 in direct the processing solution to the substrate surface. In one aspect, to provide uniform flow of gas in processing region 1025 , line 1040 is used to provide a flow path to deliver gas from gas supply 1038 through plenum 1034 and porous plate 1030 and into processing region 1025 . Valve 1035 is adapted to selectively open and close a fluid passage between plenum 1034 and gas supply 1038 . In one aspect, gas supply 1038 provides an inert gas, such as argon, nitrogen, helium, or combinations thereof, to processing region 1025 . In another aspect, the gas supply provides an oxygen-containing gas to the processing region 1025 . It should be noted that oxygen is not excluded during some stages of the electroless deposition process, eg oxygen may be added during the activation step. In this configuration, it is preferred that a carrier gas comprising the desired proportions of hydrogen and oxygen is formed or delivered through the perforated plate 1030 into the processing region 1025 .

The plenum 1034 and perforated plate 1030 are positioned above the substrate 1250 to allow laminar flow of the delivered carrier gas over the substrate 1250 . Laminar gas flow creates a uniform and vertical flow of gas onto the substrate 1250 . In this way, a uniform boundary layer is provided along the radius of the substrate 1250 . This in turn allows for more uniform heat loss over the radius of the wafer and serves to reduce the concentration of water and chemical vapors above and on the wafer. The perforated plate 1030 acts as a gas flow diffuser. The gas flowing through the perforated plate 1030 may thus help direct and evenly distribute the treatment fluid droplets flowing from the nozzles 1402 onto the receiving surface of the substrate 1250 . Finally, the gas is exhausted by exhaust system 1248 through exhaust inlet 1246 . Exhaust system 1248 may typically include an exhaust fan or vacuum pump to extract gases from fluid handling unit 1010 . Note that exhaust inlet 1246 helps ensure that the gas flow across substrate 1250 is laminar.

In one embodiment, a heating element (not shown) is disposed in lid assembly 1033 adjacent plenum 1034 . For example, heating coils (not shown) may be disposed within the perforated plate 1030 . This provides heating of the gas delivered from line 1040 which thereby minimizes condensation and droplet formation on substrate 1250 .

In one embodiment, line 1040 is connected to fluid introduction system 1200 to allow fluid (eg, process fluid) to be pushed through porous plate 1030 instead of gas. In this way, the perforated plate 1030 will act as a showerhead to deliver the process fluid to the surface of the substrate 1250 .

In one embodiment, line 1040 may serve as a fluid delivery line and also serve as a fluid removal line by creating a vacuum pressure in plenum 1034 through the use of vacuum source 1039 . A vacuum source 1039 may be used to prevent dripping of any fluid remaining on the multiwell plate 1030 just prior to transferring the substrate 1250 out of the cell 1010 . In this regard, a vacuum source 1039, such as a vacuum venturi, is actuated to create a vacuum in the plenum 1034, which in turn causes any fluid on the lower surface of the perforated plate 1030 to be "suctioned" into the plenum 1034 .

11A shows a side cross-sectional view of the face-up electroless processing chamber of FIG. 11. FIG. In this view, gas deflector 1102 is disposed within unit 1010 . The gas deflector 1102 is selectively raised or lowered using a conventional lift mechanism (not shown). As shown in FIG. 11A , the gas deflector 1102 is in its lowered position, which may allow substrates 1250 to be transported in and out of the fluid processing unit 1010 .

FIG. 11B shows a side cross-sectional view of the upward facing electroless processing chamber of FIG. 11 with a gas deflector 1102 . Here, the flow deflector 1102 is in its raised position, whereby it can be used to "enhance" and/or direct the flow of the treatment solution (e.g., treatment solution droplets) as it travels from the nozzle 1402 and during gas flow during treatment. Flow as it travels from gas supply 1038 and perforated plate 1030 towards substrate 1250 . The gas deflector 1102 is thus used to improve the repeatability and particulate performance of the process fluid and gas flow pattern during processing by limiting the number of obstructions and controlling the flow pattern of the arriving fluid.

It is desirable to provide means to visually check the progress of the fluid being dispensed on the substrate 1250 from outside the unit 1010 . In the arrangement of FIG. 11 , the camera 1360 is disposed inside the unit 1010 . The camera can be placed along sidewall 1015 , beneath perforated plate 1030 , along support ring 1031 , or any other location where a sufficient view of substrate 1250 can be obtained. Preferably, the camera 1360 is arranged at a fixed position on the cover. In the embodiment of FIG. 11 , the camera 1360 is attached to the upper support ring 1031 . Camera 1360 is preferably a charge-coupled display camera ("CCD camera") that communicates with controller 111 and employs a series of pixels to record digital images. A monitor (not shown) is provided external to unit 1010 to provide optical visibility of the substrate 1250 surface. In this way, visual confirmation of the timing and appropriateness of coverage of the substrate 1250 with electroless treatment fluid may be provided during a treatment fluid dispensing process or during a deposition process.

To assist camera 1360, it may be desirable to provide a light source (not shown). The light source will preferably be arranged on a fixed part of the cover; however it may be positioned anywhere adjacent to the treatment area 1025 . A light source is used to illuminate the substrate 1250 during processing. In one aspect, camera 1360 is used to detect light across the visible spectrum.

Visual confirmation is preferably provided by human monitoring. In one arrangement, however, the visual confirmation process is provided by a machine visually controlled process. In this arrangement, an image of the substantially covered substrate 1250 is programmed into the controller 111 (see element 111 above). In one aspect, the controller 111 thus monitors the pixelated image produced by the camera 1360 during the fluid dispensing process and compares this image to pre-recorded images or other data so that various processes related to the process can be performed by the controller 111. judge. For example, the fluid dispensing process is not allowed to "time out," or terminate, at least until the actual substrate image detected by the pixels in camera 1360 matches the pre-recorded image.

In one aspect, camera 1360 is an infrared camera. Infrared cameras will ignore visible wavelengths, but recognize thermal wavelengths. The difference in temperature can be converted within the detected image to color or intensity of the detected signal to represent the temperature difference in the object (ie, substrate 1250). When the fluid being dispensed is at a different temperature than the surface of the substrate 1250, the temperature difference will be recorded as a color difference. Fluid dispensing will continue until the temperature differential disappears, which provides an indication of complete coverage of the substrate 1250. Preferably, the temperature differential will again be monitored by machine vision control via the use of the controller and camera 1360 . Thereby, complete coverage of the substrate can be ensured.

In another aspect, camera 1360 may be a spectrometer for receiving incident light and outputting data representing various wavelengths of visible light and their intensities. For example, red light will have a greater intensity of light components grouped in the low wavelengths of the visible spectrum. Spectrometers typically include an optical prism (or grating) interface to optically separate the incident signal into its components, which are then transmitted onto a linear CCD detector array. One embodiment of a spectrometer includes a CCD detector array consisting of thousands of individual detector elements (eg, pixels) to receive the resulting spectrum from a prism (or grating). By collecting intensity versus wavelength data, the controller 111 in communication with the camera 1360 then compares the most recently received information to past or user-defined values such that the electroless deposition process steps and process variables (e.g., fluid coverage, process time , substrate temperature, substrate rotational speed) can be controlled to optimize processing results.

In one arrangement, the camera 1360 may operate under closed loop control with software optimization of the motion of the fluid dispensing arm 1406 and the flow regime from the chemical nozzle 1402 to ensure continuous chemical coverage of the surface of the substrate 1250 . This closed loop control can be achieved through the use of the camera 1360 , dispense arm motor 1404 , and components in the fluid introduction system 1200 , all of which are connected and controlled by the controller 111 .

Figure 12 shows a cross-sectional view of an upwardly facing fluid handling unit 1010 in another alternative embodiment. Here too, the treatment fluid is applied to the receiving surface of the substrate 1250 by spraying the fluid from nozzles 1402 arranged in the perforated plate 1030 . In this embodiment, the perforated plate 1030 is selectively raised or lowered relative to the substrate 1250 . More specifically, chamber lid assembly 1033 moves axially relative to substrate 1250 . To achieve this axial movement, a chamber lid lift assembly 1079 is employed. A lid actuator (schematically represented by element 1080 ′) coupled to lid assembly 1033 may be used as part of lid lift assembly 1079 . Actuator 1080' is preferably an electric actuator, and in one embodiment is a linear DC servo motor. However, the actuator 1080' could alternatively be a pneumatically actuated air cylinder. In this configuration, the lid lift assembly 1079 controls the volume of the processing region 1025 between the multiwell plate 1030 and the substrate 1250 beneath it by actuating the motor 1080'. Such an arrangement is advantageous in controlling gas flow and oxygen levels near the surface of the substrate 1250 .

Various embodiments for the above-described upward-facing electroless plating cells have been described in the description of handling substrate 1250 . It should be noted, however, that during some maintenance actions it may be desirable to operate the processing unit 1010 without a substrate on the support fingers 1300 (or support ring). More specifically, fluid introduction system 1200 and fluid extraction system 1240 may operate without a substrate disposed within processing region 1025 . For example, deionized water or other cleaning or rinsing fluids can be injected and distributed to substrate support fingers 1300 and other fluid delivery arms (eg, fluid delivery arm 1406 of FIG. 9 ) or fluid delivery plates (eg, porous plate 1030 of FIG. 11 ) through fluid delivery arms. chamber parts. This step may be done to clean the substrate support fingers 1300 and other chamber components to reduce particulate levels in the processing unit 1010 . To further assist during this cleaning step, the fluid delivery arm can be lowered (FIG. 9B), the fluid delivery head can be lowered (FIG. 12) or the substrate support assembly can be raised (FIG. 9A).

While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be changed without departing from the essential scope of the invention, which is determined by the appended claims.

Claims (22)

1. electroless treatment chamber, it has the treatment zone that is suitable for handling substrate, and described electroless treatment chamber comprises:

Be positioned at the platen assembly in the described treatment zone, described platen assembly comprises:

Base member, it has the fluid bore of formation by it;

Fluid distribution member, it sealably navigates to described base member and has upstream side and the downstream side, and wherein said fluid distribution member has a plurality of fluid channels that fluid is communicated with between described upstream side and described downstream side;

Fluid displacement, it is formed between the upstream side of described base member and described fluid distribution member;

Feature portion, its downstream side from described fluid distribution member projects upwards first distance; With rotatable substrate supports assembly, it is positioned in the described treatment zone and has substrate support surface, and wherein said rotatable substrate supports is suitable for respect to described platen assembly rotation.

2. device as claimed in claim 1, wherein said fluid distribution member are discous substantially, and the surface of described feature portion is consistent with the outward flange of described discous fluid distribution member.

3. device as claimed in claim 1, wherein said first distance is between about 0.5mm and about 25mm.

4. device as claimed in claim 1, the downstream surface of wherein said fluid distribution member have the surfaceness (R between about 1.6 μ m and about 20 μ m _a).

5. electroless treatment chamber, it has the treatment zone that is suitable for handling substrate, and described electroless treatment chamber comprises:

Be positioned at the platen assembly in the described treatment zone, described platen assembly comprises:

Base member, it has the fluid bore of formation by it;

Fluid distribution member, it sealably navigates to described base member and has upstream side and the downstream side;

Fluid displacement, it is formed between the upstream side of described base member and described fluid distribution member; With

A plurality of fluid channels, it is formed in the described fluid distribution member, and wherein said a plurality of fluid channels fluid between the described upstream side of described fluid distribution member and described downstream side is communicated with, and in described a plurality of fluid channel at least one also comprises:

The first feature portion, it is communicated with described upstream side fluid and has first cross-sectional area; With

The second feature portion, it has second cross-sectional area, the wherein said first feature portion and

The described second feature portion fluid is communicated with; With

Rotatable substrate supports assembly, it is positioned in the described treatment zone and has substrate support surface, and wherein said rotatable substrate supports is suitable for respect to described platen assembly rotation.

6. device as claimed in claim 5, wherein said second cross-sectional area is greater than described first cross-sectional area.

7. device as claimed in claim 5, wherein said a plurality of fluid channels comprise:

The array of at least four fluid channels, it is evenly distributed on the described downstream side substantially; With

Cast feature portion, it projects upwards first distance from described downstream side, and wherein said first distance is between about 0.5mm and about 25mm.

8. device as claimed in claim 5, the arranged in arrays of wherein said fluid channel are square, rectangle, radially or the intensive orientation of sexangle.

9. device as claimed in claim 5, first drum that two or more parts that also comprise its length at least in wherein said a plurality of fluid channel are extended from described upstream side and second drum that is communicated with the described first drum fluid, wherein said second drum has than the big cross-sectional area of described first drum.

10. electroless treatment chamber, it is suitable for handling substrate, and described electroless treatment chamber comprises:

Rotatable substrate supports assembly, it is positioned in the treatment zone of described electroless treatment chamber and has one or more substrate support surface;

The edge dam abutment, it is positioned in the described treatment zone and has first surface, wherein said edge dam abutment and/or be positioned at substrate on described one or more substrate support surface and can be positioned between the edge of the described first surface of described edge dam abutment and described substrate and form the gap; With

Fluid source, it is located electroless treatment solution is delivered to the surface that is positioned the substrate on the described substrate supports.

11. device as claimed in claim 10, wherein said fluid source also comprise the fluid heater with the described electroless treatment solution thermal communication of sending from described fluid source.

12. device as claimed in claim 10, wherein said edge dam abutment also comprises lifting subassembly, the surface alignment that it is suitable for making described edge dam abutment with respect to being positioned at the described substrate on described one or more substrate supports.

13. an electroless treatment chamber, it is suitable for handling substrate, and described electroless treatment chamber comprises:

Rotatable substrate supports assembly, it is positioned in the treatment zone of described electroless treatment chamber, wherein said rotatable substrate supports assembly has one or more substrate supports feature portion, its each all have substrate support surface;

The basin body assembly, it is positioned in the described treatment zone and has the one or more walls that form fluid displacement, and the size of wherein said fluid displacement allows described one or more substrate supports feature portion to be immersed in the fluid that is arranged in described fluid displacement; With

Fluid source, it is communicated with described fluid displacement and the substrate fluid that is positioned on described one or more substrate support surface.

14. device as claimed in claim 13, wherein said electroless treatment chamber also comprises the fluid heater that is communicated with the described fluid thermal that is arranged in described fluid displacement.

15. device as claimed in claim 13, wherein said electroless treatment chamber also comprises lifting subassembly, and it is suitable for making the one or more walls location of described rotatable substrate supports assembly with respect to described basin body assembly.

16. device as claimed in claim 13, wherein said rotatable supporting component also comprises:

The plenum chamber that is communicated with described substrate support surface fluid;

With described plenum chamber be positioned the vacuum source that the substrate fluid on the described substrate support surface is communicated with.

17. an electroless treatment chamber, it is suitable for handling substrate, and described electroless treatment chamber comprises:

The substrate supports assembly, it is positioned in the treatment zone of described electroless treatment chamber, wherein said substrate supports assembly has the substrate supports feature portion at one or more intervals, its each all have substrate support surface;

The basin body assembly, it is positioned in the described treatment zone and has the one or more walls that form fluid displacement, and the size of wherein said fluid displacement allows the substrate supports feature portion at described one or more intervals to be immersed in the fluid that is arranged in described fluid displacement;

Motor, it is suitable for making the substrate supports feature portion rotation at described one or more intervals;

The gap, it is formed between the surface of described one or more walls of the surface of the substrate in the substrate supports feature portion that is positioned described one or more intervals and described basin body; With

Fluid source, it is communicated with described fluid displacement and the surfactant fluid that is positioned the substrate on described one or more substrate support surface.

18. an electroless treatment chamber, it is suitable for handling substrate, and described electroless treatment chamber comprises:

Be positioned at the platen assembly in the treatment zone, described platen assembly comprises:

Fluid distribution member, it has upstream side and downstream side, and a plurality of fluid channels of providing fluid to be communicated with between described upstream side and described downstream side are provided;

First base member, it has the first-class body opening that forms by it, wherein said first base member sealably navigates to described fluid distribution member, and described first-class body opening be formed on described fluid distribution member in described a plurality of fluid channels at least one fluid be communicated with; With

Second base member, it has second fluid bore that forms by it, wherein said second base member sealably navigates to described fluid distribution member, and described second fluid bore be formed on described fluid distribution member in described a plurality of fluid channels at least one fluid be communicated with; With

Rotatable substrate supports assembly, it is positioned in the described treatment zone and has substrate support surface, and wherein said rotatable substrate supports is suitable for respect to described platen assembly rotation.

19. a method of handling substrate in the electroless treatment chamber comprises:

With substrate orientation on the substrate receiving surface of substrate supports;

Described substrate supports is orientated as apart from pervasion component a distance;

Temperature-controlled fluid is flowed through being formed at a plurality of fluid channels in the described pervasion component, make described temperature-controlled fluid contact the first surface of described substrate;

Described substrate and described substrate supports are rotated with respect to described pervasion component; With

The electroless deposition treat fluid is distributed on the second surface of described substrate so that electroless plating is deposited on the described second surface.

20. method as claimed in claim 19 wherein distributes the step of described electroless deposition treat fluid also to comprise:

Make the electroless deposition treat fluid from source flow;

Use the moveable arm assembly nozzle to be positioned at the described second surface top of described substrate; With

Described electroless deposition treat fluid is assigned on the described substrate from nozzle.

21. method as claimed in claim 19 also is included in and described electroless deposition treatment liq is carried out degasification before being distributed in described electroless deposition treat fluid on the described second surface of described substrate.

22. a method of handling substrate in having the electroless treatment chamber of treatment zone comprises:

On the substrate receiving surface with the substrate supports of substrate orientation in remaining on described treatment zone;

Described substrate support surface is orientated as apart from the pervasion component a distance that remains in the described treatment zone;

Described substrate and described substrate supports are rotated with respect to described pervasion component;

Gas is flow to the described treatment zone from handling gas source;

Make fluid flow through being formed at a plurality of fluid channels in the described pervasion component;

Described substrate receiving surface is orientated as apart from pervasion component a distance, made the first surface of described substrate contact with described mobile fluid; With

The first electroless deposition treat fluid is distributed on the second surface of described substrate.

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