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CN1988101A - Method for preparing field emitting cathode - Google Patents

Method for preparing field emitting cathode Download PDF

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Publication number
CN1988101A
CN1988101A CNA2005101212501A CN200510121250A CN1988101A CN 1988101 A CN1988101 A CN 1988101A CN A2005101212501 A CNA2005101212501 A CN A2005101212501A CN 200510121250 A CN200510121250 A CN 200510121250A CN 1988101 A CN1988101 A CN 1988101A
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CN
China
Prior art keywords
field emission
preparing
emission cathode
substrate
cathode according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005101212501A
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Chinese (zh)
Inventor
董才士
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CNA2005101212501A priority Critical patent/CN1988101A/en
Priority to US11/309,591 priority patent/US20070161313A1/en
Publication of CN1988101A publication Critical patent/CN1988101A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

This invention relates to a preparation method for field emission chathode including: providing a base plate, depositing a metal layer on it, oxidizing the surface of the metal layer to form a metal oxidation layer with multiple grooves, removing the metal oxide of the bottom of the grooves to deposit carbon nm tubes on the bottom of the grooves with an electrophoresis deposition method.

Description

A kind of preparation method of field-transmitting cathode
[technical field]
The present invention relates to a kind of preparation method of field-transmitting cathode.
[background technology]
Carbon nano-tube is a kind of new carbon, it has extremely excellent electric conductivity, and it has almost, and long-pending (tip end surface is long-pending more little near the tip end surface of theoretical limit, its internal field is concentrated more), so carbon nano-tube is known best field emmision material, it has extremely low emission voltage, can transmit very big current density, and the electric current stabilizer pole, thereby be fit to very much do the emitting module of Field Emission Display.
The carbon nano-tube that is used for emitting module adopts arc discharge method or chemical vapour deposition technique (CVD method) carbon nanotubes grown more.The mode that carbon nano-tube is applied to Field Emission Display has: will contain the electrocondution slurry of carbon nano-tube or organic adhesive and be printed as figure and make carbon nano-tube to expose head from the burying of slurry by subsequent treatment to become emitter.In the method, the electrocondution slurry that will contain carbon nano-tube is coated on the electrically-conductive backing plate in the mode of thick film steel plate printing, and carbon nano-tube bends in slurry, is interweaved, be difficult for forming carbon nano-tube perpendicular to electrically-conductive backing plate, for forming well behaved emission tip, need carbon nano pipe array is carried out subsequent treatment, promptly, one deck slurry is peeled off, come and become emitter thereby make carbon nano-tube expose head from the burying of slurry, still, it is very big to the carbon nano-tube damage to peel off this pulp layer.
In the carbon nano-tube film of method for preparing, carbon nano-tube is lain prone on electrically-conductive backing plate on substantially, and the carbon nano-tube that electrically-conductive backing plate is vertical is less relatively.Yet carbon nano-tube is to launch electronics vertically from an end of carbon nano-tube as field emission body, so carbon nano-tube is lain prone and be unfavorable for the performance of carbon nano-tube field emission performance on electrically-conductive backing plate.
[summary of the invention]
In view of this, provide a kind of carbon nano-tube of not damaging, make the relative electrically-conductive backing plate in termination of field emission body of Nano carbon tube vertical substantially, thereby the preparation method who guarantees the carbon nano-tube field-transmitting cathode that the performance of carbon nano-tube field emission performance is good is real in necessary.
The preparation method of this field-transmitting cathode comprises the following steps: to provide a substrate, deposition one metal level on this substrate; Layer on surface of metal is carried out oxidation processes, and formation one has the metal oxide layer of a plurality of grooves; Remove the metal oxide of a plurality of bottom portion of groove; By the electrophoretic deposition mode at the bottom portion of groove deposition of carbon nanotubes.
Compare with prior art, the relative substrate in the termination of the field emission body of Nano carbon tube that the preparation method of described field-transmitting cathode makes is vertical substantially, thereby has improved the uniformity of field emission electron, has promptly improved the carbon nano-tube field emission performance.
[description of drawings]
Fig. 1 is a field-transmitting cathode preparation method's of the present invention flow chart.
Fig. 2 is a field-transmitting cathode preparation method's of the present invention schematic flow sheet.
Fig. 3 (a) to (b) is by the schematic flow sheet of electrophoretic deposition mode at the bottom portion of groove deposition of carbon nanotubes.
[embodiment]
Please refer to Fig. 1 and Fig. 2, the preparation method of field-transmitting cathode of the present invention may further comprise the steps:
Step 1 provides a substrate 110, deposition one metal level 130 on this substrate 110.
Substrate 110 can be selected common glass substrates or electrically-conductive backing plate for use, tin indium oxide (ITO for example, Indium Tin Oxide) electro-conductive glass, silver-plated glass substrate, if select common glass substrates for use, generally can be before deposition one metal level on the substrate plating one conductive layer 120 earlier.At this, can adopt hot vapour deposition method (Thermal Evaporation), sputtering method (Sputtering), thermal chemical vapor deposition method methods such as (Thermal Chemical VaporDeposition) with metal deposition to substrate 110.Above-mentioned metal level 130 can be metal or its alloys such as nickel, silver, aluminium, in the present embodiment with thermal chemical vapor deposition method with al deposition to substrate 110.
Step 2 is carried out oxidation processes to metal level 130 surfaces, and formation one has the metal oxide layer 132 of a plurality of grooves 134.
Since in the present embodiment be with al deposition to substrate 110, in fact be exactly to anodizing of aluminium so oxidation processes is carried out on metal level 130 surfaces, when anode oxidation process begins, the Al of metal surface generation 3+With the oxo-anions (R that generates in the electrolyte 2-) following reaction takes place:
2Al 3++3R 2-+2H 2O→Al 2O 3+3H 2R
In the formula, R is the oxyacid radical ion or the O of negative divalence 2-, generate Al with it on the Al surface 2O 3Film; Constantly carry out Al with anodic process 3+Under electric field action at Al 2O 3The R of migration and film in the film/electrolyte interface migration 2-Species interact, Al 2O 3Film is constantly grown.In addition, when oxidation processes was carried out on metal level 130 surfaces, reaction conditions such as the kind of selected acid and concentration, etching time, current density can be controlled the pattern and the degree of depth of the groove 134 of metal oxide layer 132.Metal oxide layer 132 can be used as the dividing wall (Spacer) of field-transmitting cathode.
Step 3 is removed the metal oxide of a plurality of bottom portion of groove 1341.
After anodized, the metal oxide layer 132 of generation is positioned at the top of metal level 130, erodes with the metal oxide of acid solution with a plurality of bottom portion of groove 1341 again, so that the metal of its below exposes, at this, can select oxalic acid for use.When the metal oxide of bottom portion of groove 1341 being corroded with acid solution, the sidewall of groove 134 also can be eroded by acid solution, but the metal oxide on the sidewall of the relative groove 134 of the metal oxide layer of bottom portion of groove 1341 is thinner, so, the metal oxide of bottom portion of groove 1341 eroded and when exposing metal, also can be oxidized fall with the metal oxide of the metal oxide layer same thickness of bottom portion of groove 1341 on the sidewall of groove 134, at this moment, these a plurality of grooves 134 can become big accordingly.
Step 4, by the electrophoretic deposition mode at a plurality of bottom portion of groove 1341 deposition of carbon nanotubes 490.
See also Fig. 3 (a), utilize the electrophoretic deposition mode at bottom portion of groove 1341 deposition adhering agent layers 470 earlier, solution 480 is to be mixed with magnesium nitrate [Mg (NO 3) 2] aqueous solution of particle 4701, added electric field is at bottom portion of groove 1341 deposition one deck magnesium hydroxide [Mg (OH) between electrode 410 and conductive layer 130 2], this is because Mg (NO 3) ++ 2OH -→ Mg (OH) 2(s)+NO 3 -, then Chen Ji magnesium hydroxide is required sticker.See also Fig. 3 (b), again by electrophoretic deposition mode deposition of carbon nanotubes 490 on adhering agent layer 470, solution 580 is for being mixed with the alcoholic solution of carbon nano-tube 490, added electric field deposition of carbon nanotubes 490 on adhering agent layer 470 between electrode 510 and conductive layer 130, at this, can control the thickness of the deposition of carbon nanotubes of wanting 490 by the parameter in the change electrophoretic deposition mode, as voltage, solution concentration etc.Then, substrate 110 is heat-treated, under 100 degrees centigrade～200 degrees centigrade condition, carry out sintering, make carbon nano-tube 490 and adhering agent layer 470 bonding more closely.
In addition, those skilled in the art also can do other variation in spirit of the present invention.So the variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.

Claims (10)

1.一种场发射阴极的制备方法，包括下列步骤：提供一基板，在该基板上沉积一金属层；对金属层表面进行氧化处理，形成一具有多个凹槽的金属氧化物层；去除多个凹槽底部的金属氧化物；通过电泳沉积方式在凹槽底部沉积碳纳米管。1. A preparation method for a field emission cathode, comprising the steps of: providing a substrate, depositing a metal layer on the substrate; carrying out oxidation treatment on the surface of the metal layer to form a metal oxide layer with a plurality of grooves; removing Metal oxide at the bottom of multiple grooves; carbon nanotubes are deposited at the bottom of the grooves by electrophoretic deposition. 2.根据权利要求1所述的场发射阴极的制备方法，其特征在于：所述基板为导电基板。2 . The method for preparing a field emission cathode according to claim 1 , wherein the substrate is a conductive substrate. 3 . 3.根据权利要求1所述的场发射阴极的制备方法，其特征在于：所述金属层中所含金属为铝。3. The method for preparing a field emission cathode according to claim 1, wherein the metal contained in the metal layer is aluminum. 4.根据权利要求1所述的场发射阴极的制备方法，其特征在于：所述在基板上沉积金属层是用热蒸镀方式或热化学气相沉积方式。4. The method for preparing a field emission cathode according to claim 1, characterized in that: said depositing the metal layer on the substrate is by means of thermal evaporation or thermal chemical vapor deposition. 5.根据权利要求1所述的场发射阴极的制备方法，其特征在于：所述氧化处理是用阳极氧化方式。5. The method for preparing a field emission cathode according to claim 1, characterized in that: the oxidation treatment is anodic oxidation. 6.根据权利要求1所述的场发射阴极的制备方法，其特征在于：所述去除多个凹槽底部的金属氧化物是用酸溶液将其去除。6 . The method for preparing a field emission cathode according to claim 1 , wherein the metal oxide at the bottom of the plurality of grooves is removed by using an acid solution. 7 . 7.根据权利要求1所述的场发射阴极的制备方法，其特征在于：在沉积碳纳米管之前通过电泳沉积方式在凹槽底部沉积一粘着剂层。7 . The method for preparing a field emission cathode according to claim 1 , wherein an adhesive layer is deposited at the bottom of the groove by electrophoretic deposition before depositing the carbon nanotubes. 8 . 8.根据权利要求7所述的场发射阴极的制备方法，其特征在于：所述粘着剂层为氢氧化镁。8. The method for preparing a field emission cathode according to claim 7, characterized in that: the adhesive layer is magnesium hydroxide. 9.根据权利要求7所述的场发射阴极的制备方法，其特征在于：所述碳纳米管是沉积在粘着剂层上。9. The method for preparing a field emission cathode according to claim 7, characterized in that: the carbon nanotubes are deposited on the adhesive layer. 10.根据权利要求7所述的场发射阴极的制备方法，其特征在于：在沉积碳纳米管之前进一步包括对基板进行热处理的步骤。10 . The method for preparing a field emission cathode according to claim 7 , further comprising a step of heat-treating the substrate before depositing the carbon nanotubes. 11 .
CNA2005101212501A 2005-12-23 2005-12-23 Method for preparing field emitting cathode Pending CN1988101A (en)

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CNA2005101212501A CN1988101A (en) 2005-12-23 2005-12-23 Method for preparing field emitting cathode
US11/309,591 US20070161313A1 (en) 2005-12-23 2006-08-28 Method for manufacturing field emission cathode

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CNA2005101212501A CN1988101A (en) 2005-12-23 2005-12-23 Method for preparing field emitting cathode

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101471210B (en) * 2007-12-29 2010-11-10 清华大学 hot electron source
CN112053925A (en) * 2020-10-09 2020-12-08 深圳先进技术研究院 Field emission cathode and preparation method thereof
CN113517164A (en) * 2021-03-08 2021-10-19 中国科学院深圳先进技术研究院 Manufacturing method of carbon nanotube cathode, carbon nanotube cathode and electronic device
WO2022188003A1 (en) * 2021-03-08 2022-09-15 中国科学院深圳先进技术研究院 Manufacturing method for carbon nanotube cathode, and carbon nanotube cathode and electronic device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101019576B1 (en) * 2008-11-14 2011-03-08 포항공과대학교 산학협력단 Humidity sensor having a porous aluminum oxide layer and a method of manufacturing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6882094B2 (en) * 2000-02-16 2005-04-19 Fullerene International Corporation Diamond/diamond-like carbon coated nanotube structures for efficient electron field emission
US6902658B2 (en) * 2001-12-18 2005-06-07 Motorola, Inc. FED cathode structure using electrophoretic deposition and method of fabrication
US6946597B2 (en) * 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
US7112472B2 (en) * 2003-06-25 2006-09-26 Intel Corporation Methods of fabricating a composite carbon nanotube thermal interface device
US7628974B2 (en) * 2003-10-22 2009-12-08 International Business Machines Corporation Control of carbon nanotube diameter using CVD or PECVD growth
US7470353B2 (en) * 2004-08-30 2008-12-30 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing field emitter electrode using self-assembling carbon nanotubes and field emitter electrode manufactured thereby
US7485024B2 (en) * 2005-10-12 2009-02-03 Chunghwa Picture Tubes, Ltd. Fabricating method of field emission triodes

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101471210B (en) * 2007-12-29 2010-11-10 清华大学 hot electron source
CN112053925A (en) * 2020-10-09 2020-12-08 深圳先进技术研究院 Field emission cathode and preparation method thereof
CN113517164A (en) * 2021-03-08 2021-10-19 中国科学院深圳先进技术研究院 Manufacturing method of carbon nanotube cathode, carbon nanotube cathode and electronic device
WO2022188003A1 (en) * 2021-03-08 2022-09-15 中国科学院深圳先进技术研究院 Manufacturing method for carbon nanotube cathode, and carbon nanotube cathode and electronic device
CN113517164B (en) * 2021-03-08 2024-03-29 中国科学院深圳先进技术研究院 Manufacturing method of carbon nanotube cathode, carbon nanotube cathode and electronic equipment

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