CN1988188A - Light-emitting diode crystal grain with fluorescent layer structure and its manufacturing method - Google Patents
Light-emitting diode crystal grain with fluorescent layer structure and its manufacturing method Download PDFInfo
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- CN1988188A CN1988188A CNA200510132416XA CN200510132416A CN1988188A CN 1988188 A CN1988188 A CN 1988188A CN A200510132416X A CNA200510132416X A CN A200510132416XA CN 200510132416 A CN200510132416 A CN 200510132416A CN 1988188 A CN1988188 A CN 1988188A
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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Abstract
The invention discloses a light-emitting diode grain with a fluorescent layer structure, which comprises a base material with a first surface and a second surface opposite to the first surface, a light-emitting component formed on the first surface and at least one fluorescent layer with a flat structure formed on the second surface. The light-emitting component emits a primary light with a specific wavelength after being driven by voltage, and the primary light can penetrate through the substrate. Secondly, the fluorescent layer comprises at least one organic matter and at least one fluorescent powder, and the fluorescent powder is distributed in the organic matter in a continuous phase; the at least one phosphor absorbs and converts a portion of the primary light to emit at least one secondary light, and the at least one secondary light has a wavelength different from the specific wavelength. On the other hand, the invention also discloses a manufacturing method of the light-emitting diode grain with the fluorescent layer structure.
Description
Invention field
The invention relates to a kind of LED crystal particle, particularly about a kind of LED crystal particle and manufacture method thereof with tabular (plate-shaped) fluorescence layer structure.
Prior art
Since light-emitting diode have the life-span long, electric current is low, volume is little, do not have thermal radiation, do not contain good luminous characteristic such as mercury, so be regarded as the lighting apparatus of a new generation in recent years.After inferior chemistry is developed blue light-emitting diode by day, cooperate suitable fluorescent powder, white light emitting diode also is born thereupon.
The U.S. the 6th, 614,179 B1 patents propose a kind of white light emitting diode structure with yellow fluorescent powder YAG, it discloses a kind of LED wafer structure of routing type, after fluorescent powder is doped to epoxy resin or urea resin, again resin is poured into the outer cup-shaped space of above-mentioned light-emitting diode, to finish encapsulation.This structure has two significant drawback, and the one, the heat energy that the chip architecture of routing type causes assembly to produce can't effectively shed, and causes the wafer life-span to shorten; The 2nd, the shared volume of resin is too big, cause the part fluorescent powder grain to block and luminously cause whole light to penetrate efficient to reduce, and this encapsulating structure is difficult to design for the conversion ratio of each coloured light.In view of this, still be necessary to develop new encapsulation technology and fluorescent material and mix the prescription formula reducing production costs, and improve assembly useful life.
Summary of the invention
In above-mentioned background of invention,, the invention provides a kind of new LED crystal particle with fluorescence layer structure and manufacture method thereof in order to meet industrial requirement.
One object of the present invention is directly to finish the fluorescent material packaging process at crystal circle grade, therefore can reduce the overall package cost, and technology provided by the present invention can be implemented all for the light-emitting diode of visible light and non-visible light.In addition, the present invention can be by disperseing fluorescent powder in organic substance, to form a kind of intermediate solution and to place (depositing) on wafer, thus, above-mentioned intermediate solution can be formed on the crystal column surface with the ink-jet modes such as (injet printing) of prining by coating (coating), printing (printing), wire mark (screen printing), spraying (spraying), impression (impressing), and technology is easy and easy to implement.
Another object of the present invention is to by inhomogeneous dispersion fluorescent powder in fluorescence coating, and make fluorescent powder divide bulk density to increase or be the systematicness increase and decrease, to increase the luminous efficiency of LED crystal particle along at least one specific direction.
Another purpose of the present invention is to adjust every layer of refractive index of multilayer fluorescence coating, by the structure of graded index, can effectively reduce one-level and the reflection of two auroral lines in fluorescence coating, and reaching increases the result that the whole light of crystal grain penetrates efficient.Therefore, the present invention can meet economically benefit and industrial application.
According to above-described purpose, the invention discloses a kind of LED crystal particle with fluorescence layer structure, it comprises one and has luminescence component and at least one fluorescence coating with plate-like structure that is formed at second surface that a first surface and a base material, with respect to the second surface of first surface are formed at first surface.Above-mentioned luminescence component is launched a kind of one-level light with specific wavelength after driven, and the penetrable base material of one-level light.Secondly, fluorescence coating comprises at least a organic substance and at least a fluorescent powder, and described fluorescent powder is to be distributed in the organic substance that is continuous phase; Above-mentioned at least a fluorescent powder absorbs and the above-mentioned one-level light of transform portion, and launching at least a secondary light, and the wavelength of at least a secondary light is different from above-mentioned specific wavelength.On the other hand, the present invention has also disclosed the manufacture method of the LED crystal particle with fluorescence layer structure.
Description of drawings
Figure 1A is according in the embodiments of the invention 1, a kind of structural representation with LED crystal particle of fluorescence layer structure;
Figure 1B is according in the embodiments of the invention 1, the inhomogeneous schematic diagram that is scattered in fluorescence coating of a kind of fluorescent powder;
Fig. 1 C is according in the embodiments of the invention 1, the inhomogeneous schematic diagram that is scattered in fluorescence coating of a kind of fluorescent powder;
Fig. 1 D is according in the embodiments of the invention 1, the inhomogeneous schematic diagram that is scattered in fluorescence coating of a kind of fluorescent powder;
Fig. 1 E is according in the embodiments of the invention 1, the inhomogeneous schematic diagram that is scattered in fluorescence coating of a kind of fluorescent powder;
Fig. 1 F is according in the embodiments of the invention 1, a kind of structural representation with LED crystal particle of protective layer; With
Fig. 1 G is according in the embodiments of the invention 1, a kind of structural representation with LED crystal particle of ultraviolet light filter course;
Fig. 1 H is according in the embodiments of the invention 1, a kind of structural representation with LED crystal particle of multilayer fluorescence coating;
Fig. 2 is according in the embodiments of the invention 2, a kind of manufacturing flow chart with LED crystal particle of fluorescence layer structure;
Fig. 3 A is according in the embodiments of the invention 3, a kind of manufacturing flow chart with LED crystal particle of fluorescence layer structure;
Fig. 3 B is according in the embodiments of the invention 3, the inhomogeneous process schematic representation that is scattered in fluorescence coating of a kind of fluorescent powder;
Fig. 3 C is according in the embodiments of the invention 3, the inhomogeneous process schematic representation that is scattered in fluorescence coating of a kind of fluorescent powder;
Fig. 3 D is according in the embodiments of the invention 3, the inhomogeneous process schematic representation that is scattered in fluorescence coating of a kind of fluorescent powder;
Fig. 3 E is according in the embodiments of the invention 3, the inhomogeneous process schematic representation that is scattered in fluorescence coating of a kind of fluorescent powder; With
Fig. 4 is according in the embodiments of the invention 4, a kind of manufacturing flow chart with LED crystal particle of fluorescence layer structure.
Embodiment
The present invention is a kind of LED crystal particle and manufacture method thereof with fluorescence layer structure in this direction of inquiring into.In order to understand the present invention up hill and dale, detailed step and composition thereof will be proposed in following description.Obviously, enforcement of the present invention is not defined in the specific details that those skilled in the art were familiar with in the light-emitting diode field.On the other hand, well-known composition or step are not described in the details, with the restriction of avoiding causing the present invention unnecessary.The preferred embodiments of the present invention can be described in detail as follows, yet except these were described in detail, the present invention can also implement in other embodiments widely, and scope of the present invention do not limit by it, with after claim be as the criterion.
Embodiment
Embodiment 1
With reference to the accompanying drawings shown in the 1A, embodiments of the invention 1 disclose a kind of LED crystal particle with fluorescence layer structure, and it comprises one and has the luminescence component 120 and at least one fluorescence coating with plate-like structure 130 that is formed at second surface that a first surface and a base material 110, with respect to the second surface of first surface are formed at first surface.Above-mentioned luminescence component (for example: blue light), and the penetrable base material 110 of one-level light is launched a kind of one-level light with specific wavelength after driven.Secondly, fluorescence coating 130 comprises at least a organic substance and at least a fluorescent powder, and described fluorescent powder is to be distributed in the organic substance that is continuous phase; Above-mentioned at least a fluorescent powder absorbs and the above-mentioned one-level light of transform portion, and launching at least a secondary light, and the wavelength of at least a secondary light is different from above-mentioned specific wavelength.Above-mentioned luminescence component 120 comprises a plurality of semiconductor layers.With the blue light emitting assembly is example, and a plurality of semiconductor layers comprise following material: n-GaN layer, SQW or MQW GaInN layer, p-AlGaN layer and p-GaN layer.Luminescence component 120 also can comprise n-electrode pad (electrode bond pad), n-electrode, p-electrode pad (electrode bondpad) and p-electrode.
In the present embodiment, the thickness of above-mentioned fluorescence coating 130 is more than or equal to 20nm; Preferably, its thickness is more than or equal to 1 μ m (being called thick film (thick film) fluorescence coating); More preferably, its thickness is more than or equal to 10 μ m.The particle diameter of above-mentioned fluorescent powder is more than or equal to 10nm.In addition, the organic substance in the fluorescence coating 130 one of comprises in following group: micromolecule, oligomer and macromolecule.Character such as that above-mentioned organic selection preferably can meet is transparent, the high and low moisture absorption of light transmittance, thermal stability height.When organic substance was macromolecule, a kind of preferred selection was that high molecular glass transition temperature (Tg) is more than or equal to 150 ℃; Another kind of preferred the selection is one of to comprise in following group: epoxy resin (epoxy), polyethers-polysulfones (polyether-polysulfone, PES), the inferior aromatic ester of poly-sulfuration (polyarylene sulfide, PAS), polybenzimidazoles (polybenzimidazoles, PBI), polyacrylate (polyacrylate), polyamide (polyamide, PA), polyimides (polyimide, PI), polyethers-polyimides (polyether-polyimide, PEI), polyarylate (polyarylate, PAR), cyclic olefine copolymer (cyclic olefin copolymer, COC), Merlon (polycarbonate, PC) and copolymer.
In the present embodiment, the formation method of above-mentioned fluorescence coating 130 one of comprises in following group: coating (coating), printing (printing), wire mark (screen printing), spraying (spraying), impression (impressing) and ink-jet print (injet printing).Above-mentioned coating process also comprises rotary coating (spin coating), ring bar type coating (wire-bar coating), cutter formula coating (bladecoating), cylinder coating (roller coating), dip-coating (dip coating) ... etc.
In the present embodiment, above-mentioned fluorescent powder also can inhomogeneously be scattered in the fluorescence coating, for example following four kinds of deployment conditions (shown in Figure 1B to Fig. 1 E, the fluorescent powder symbol is 130a, and the organic substance symbol is 130b):
1. to divide bulk density be to increase along specific direction to fluorescent powder 130a, and specific direction is parallel with fluorescence coating 130.
2. when overlooking fluorescence coating 130, it is outwards to increase along central point that fluorescent powder 130a divides bulk density.
3. when overlooking this fluorescence coating 130, it is outwards to reduce along central point that this fluorescent powder 130a divides bulk density.
4. when overlooking this fluorescence coating, it is outwards to present distributed wave along central point that fluorescent powder divides bulk density.
On the other hand; shown in the 1F, the above-mentioned LED crystal particle with fluorescence layer structure also comprises a protective layer 140 with reference to the accompanying drawings, and it is positioned on the fluorescence coating 130; with isolated fluorescence coating 130 and extraneous aqueous vapor, soda acid or external force collision, thus the life-span of prolongation fluorescent powder.Be more preferably, the thermal stress that is produced when using LED crystal particle provided by the present invention also can be discharged by above-mentioned protective layer 140.
In a preferred examples of present embodiment, penetrate base material 110 and unabsorbed one-level light and at least a secondary light by mixing, (for example: white light) can form a kind of three grades of light.In another preferred examples of present embodiment, above-mentioned one-level light is ultraviolet light, and above-mentioned fluorescent powder also comprises ruddiness, green glow and blue light fluorescent powder body, when ultraviolet light penetrates base material and arrives fluorescence coating, ruddiness, green glow and blue light fluorescent powder body absorb respectively and the transform portion ultraviolet light, with red-emitting, green glow and blue light, can form white light by mixing ruddiness, green glow and blue light.
In addition; with reference to the accompanying drawings shown in the 1G; the above-mentioned LED crystal particle with fluorescence layer structure also comprises a ultraviolet light filter course 150; it is positioned on the surface away from base material of fluorescence coating; with absorb or reflection not by the ultraviolet light that at least a fluorescent powder absorbed, thereby avoid ultraviolet light to leak.Ultraviolet light filter course 150 can have four kinds of differences that situation is set:
1. the ultraviolet light filter course is made up of a sealant (encapsulant) and the ultraviolet light filtering material that is scattered in the sealant, and wherein, the sealant material is polysiloxanes (silicone).
2. the ultraviolet light filter course comprises protection against the tide, antiacid alkali and anti-scratch material.
3. the ultraviolet light filter course (for example: Bragg mirror) comprises multi-level level structure.
4. protective layer is positioned on the surface away from base material of ultraviolet light filter course.
And above-mentioned ultraviolet light filter course 150 allows visible light to penetrate, and therefore, the luminous efficiency that ultraviolet light filter course 150 can influence LED crystal particle hardly is set, and can guarantee that also the user can not touch ultraviolet light, promote Product Safety.On the other hand, the above-mentioned LED crystal particle with fluorescence layer structure is to interconnect with flip chip type attitude and other assembly.
In the present embodiment, when at least one fluorescence coating with plate-like structure that is formed on second surface was sandwich construction, the refractive index of every layer of fluorescence coating can increase along with the distance between single fluorescence coating and the luminescence component and reduce.With reference to the accompanying drawings shown in the 1H, in another preferred examples of present embodiment, above-mentioned multilayer fluorescence coating is two-layer (130a and 130b), wherein, the refractive index of 130a and 130b is all between base material 110 and air, and because 130b is bigger to the distance of luminescence component 120 than 130a to the distance of luminescence component 120, therefore, the refractive index of 130b is less than the refractive index of 130a.This design is to use the Fresnel reflection law, by the structure of graded index, can effectively reduce one-level and the reflection of two auroral lines in fluorescence coating, and reaching increases the result that the whole light of crystal grain penetrates efficient.
Embodiment 2
Shown in 2, embodiments of the invention 2 disclose a kind of manufacture method with LED crystal particle of fluorescence layer structure with reference to the accompanying drawings, at first provide a wafer with a first surface and a second surface, and first surface are relative with second surface.Then, form a luminescence component on the first surface of wafer, thereby form the wafer 210 with luminescence component, wherein, above-mentioned wafer comprises single crystal wafers, and above-mentioned wafer material one of comprises in following group: carborundum and sapphire substrate.Secondly, carry out a combination process 240 to mix at least a fluorescent powder 230 and at least a organic substance 220, and disperse fluorescent powder 230 in organic substance 220, to form a kind of intermediate solution 250a, wherein, the particle diameter of above-mentioned fluorescent powder 230 is more than or equal to 10nm, and the addition of fluorescent powder 230 is more than or equal to 20% of organic substance 220 weight, and organic selection is identical with embodiment 1.Then, carry out a placement program 260 to place intermediate solution 250a on the second surface of wafer.Then, (for example:, and form a fluorescence coating 250b carry out one first program curing 270 crosslinked program) with the intermediate solution 250a on the curing second surface.At last, carry out wafer cutting (wafer dicing) program 280, to form a plurality of LED crystal particle 290 with fluorescence layer structure.On the other hand, above-mentioned LED crystal particle 290 with fluorescence layer structure is preferably designed for the flip chip type attitude.
In the present embodiment, the thickness of above-mentioned fluorescence coating 250b is more than or equal to 20nm; Preferably, its thickness is more than or equal to 1 μ m (being called thick film (thick film) fluorescence coating); More preferably, its thickness is more than or equal to 10 μ m.The decision design of fluorescence coating 250b is to have plate-like structure.In addition, placement program 260 one of comprises in following group: coating (coating), printing (printing), wire mark (screen printing), spraying (spraying), impression (impressing) and ink-jet print (injet printing).Above-mentioned coating process also comprises rotary coating (spin coating), ring bar type coating (wire-bar coating), cutter formula coating (blade coating), cylinder coating (rollercoating), dip-coating (dip coating) ... etc.
In a preferred examples of present embodiment, above-mentioned organic substance 220 is AB formulation PI, present the solution state that the AB agent mixes, can not carry out polymerization at normal temperatures, 270 of first program curings of its correspondence comprise roasting firmly (hardbake) step of soft roasting (softbake) step and, at first soft roasting step is to continue 50 seconds down at 135 ℃, carry out roasting firmly step afterwards, it is to continue 30 minutes down in 400 ℃, the hot test data of simple AB formulation PI (not containing fluorescent powder 230) after solidifying is as follows: Tg is 371 ℃, and Td is 597 ℃.In addition, in another preferred examples of present embodiment, above-mentioned organic substance 220 is PEI, preferred solvent is 1, (1,4-dioxane), first program curing 270 of its correspondence is that (temperature is lower than 50 ℃ under constant-temperature constant-humidity environment to the 4-dioxane, relative humidity is lower than 50%) to remove and desolvate, the hot test data of simple PEI (not containing fluorescent powder 230) after solidifying is as follows: Tg is 215 ℃.
In the present embodiment; before above-mentioned wafer cutting process 280, can carry out a protection handling procedure earlier, to form a protective layer on fluorescence coating 250b; thereby isolated fluorescence coating 250b and extraneous aqueous vapor, soda acid or external force collision are to prolong the life-span of fluorescent powder 230.Wherein a kind of detailed step of handling procedure of protecting is as follows: provide and be coated with a kind of protective coating on fluorescence coating 250b.Then, carry out one second program curing with the protective coating on the curing fluorescence coating 250b, and form a protective layer.The second above-mentioned program curing comprises crosslinked program.In addition; another kind of protection handling procedure is to carry out before program curing; its detailed step comprises: a screening glass is provided, and the intermediate solution 250a on pressing screening glass and the second surface then, and make screening glass and fluorescence coating 250b fluid-tight engagement by the first follow-up program curing 270.
In the present embodiment, before wafer cutting process 280, also comprise a ultraviolet light handling procedure forming a ultraviolet light filter course on fluorescence coating 250b, so that reflection or absorb the ultraviolet light that is not absorbed by at least a fluorescent powder 230, thereby avoid ultraviolet light to leak.Wherein a kind of ultraviolet light handling procedure is to carry out before program curing, its detailed step comprises: a ultraviolet light filter is provided, intermediate solution 250a on pressing ultraviolet light filter and the second surface then, and make ultraviolet light filter and fluorescence coating 250b fluid-tight engagement by the first follow-up program curing 270.
Embodiment 3
Shown in the 3A, embodiments of the invention 3 disclose a kind of manufacture method with LED crystal particle of fluorescence layer structure with reference to the accompanying drawings, at first provide a wafer with a first surface and a second surface, and first surface are relative with second surface.Then, form a luminescence component on the first surface of wafer, thereby form wafer 310 with luminescence component.Secondly, carry out a placement program 340 to place at least a organic substance 320 on the second surface of wafer.Then, carry out a spray procedure 350 to spray at least a fluorescent powder 330 on this organic substance 320.Then, (for example: crosslinked program) solidifying the organic substance 320 on the second surface, and the relative position of fixed fluorescent powder body 330 and organic substance 320, thereby form a fluorescence coating 370 carry out a program curing 360.At last, carry out wafer cutting (wafer dicing) program 380, to form a plurality of LED crystal particle 390 with fluorescence layer structure.The selection of above-mentioned wafer material, fluorescent powder 330 particle diameters, fluorescent powder 330 additions, fluorescence coating 370 thickness, organic substance 320 materials, placement program 340 is identical with embodiment 2.
In the present embodiment, above-mentioned spray procedure 350 can make fluorescent powder 330 uneven distributions in the fluorescence coating 370 of each predetermined crystal grain, spray procedure 350 can be by adjusting spray time or adjusting spraying density to reach above-mentioned purpose, for example accompanying drawing 3B is to the spraying result shown in the accompanying drawing 3E, wherein, light-colored part represents fluorescent powder 330 distribution densities low, and dark part is represented fluorescent powder 330 distribution density height (the wafer symbol is 310 ', and the crystal grain symbol is 390).
Embodiment 4
Shown in 4, embodiments of the invention 4 disclose a kind of manufacture method with LED crystal particle of fluorescence layer structure with reference to the accompanying drawings, at first provide a wafer with a first surface and a second surface, and first surface are relative with second surface.Then, form a luminescence component on the first surface of wafer, thereby form wafer 410 with luminescence component.Secondly, carry out one first placement program 440 to be coated with at least a first organic substance 420 on the second surface of wafer.Then, carry out a spray procedure 450 to spray at least a fluorescent powder 430 on this first organic substance 420.Then, (for example: crosslinked program) solidifying first organic substance 420 on the second surface, and the relative position of the fixed fluorescent powder body 430 and first organic substance 420, thereby form one first fluorescence coating 465 carry out one first program curing 460.Secondly, carry out the second placement program 470 to place at least a second organic substance 425 on this first fluorescence coating 465.Then, carry out one second program curing 475 solidifying this second organic substance 425 on this first fluorescence coating 465, and form one second fluorescence coating 480.At last, carry out wafer cutting (wafer dicing) program 485, to form a plurality of LED crystal particle 490 with fluorescence layer structure.The selection of above-mentioned wafer material, fluorescent powder 430 particle diameters, fluorescent powder 430 additions, fluorescence coating thickness, organic substance 420 and 425 materials, placement program, spray procedure 450 is identical with embodiment 3 with condition.
In the embodiment of the invention described above, the present invention directly finishes fluorescent material encapsulation action at crystal circle grade, therefore can reduce the overall package cost, and technology provided by the present invention can be implemented all for the light-emitting diode of visible light and non-visible light.In addition, the present invention is by disperseing fluorescent powder in organic substance, to form an intermediate solution and to place (depositing) on wafer, thus, above-mentioned intermediate solution can be formed on the crystal column surface with the ink-jet modes such as (injet printing) of prining by coating (coating), printing (printing), wire mark (screenprinting), spraying (spraying), impression (impressing), and technology is easy and easy to implement.Moreover the present invention in fluorescence coating, and makes fluorescent powder divide bulk density to increase along at least one specific direction by inhomogeneous dispersion fluorescent powder, to increase the luminous efficiency of LED crystal particle.On the other hand, the present invention can adjust every layer of refractive index of multilayer fluorescence coating, by the structure of graded index, can effectively reduce one-level and the reflection of two auroral lines in fluorescence coating, and reaching increases the result that the whole light of crystal grain penetrates efficient.Therefore, the present invention can meet economically benefit and industrial application.
Comprehensive the above, the invention discloses a kind of LED crystal particle with fluorescence layer structure, it comprises one and has luminescence component and at least one fluorescence coating with plate-like structure that is formed at second surface that a first surface and base material with respect to the second surface of first surface, are formed at first surface.Above-mentioned luminescence component is launched a kind of one-level light with specific wavelength after driven, and the penetrable base material of one-level light.Secondly, fluorescence coating comprises at least a organic substance and at least a fluorescent powder, and described fluorescent powder is to be distributed in the organic substance that is continuous phase; Above-mentioned at least a fluorescent powder absorbs and the above-mentioned one-level light of transform portion, and launching at least a secondary light, and the wavelength of at least a secondary light is different from above-mentioned specific wavelength.On the other hand, the present invention also discloses the manufacture method of the LED crystal particle with fluorescence layer structure.
Apparently, according to describing among the top embodiment, the present invention has many corrections and variation.Therefore need be understood in the scope of its additional claim, except above-mentioned detailed description, the present invention can also implement widely in other embodiments.Above-mentioned is preferred examples of the present invention only, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should comprise within the scope of the following claims.
Claims (28)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200510132416XA CN1988188A (en) | 2005-12-23 | 2005-12-23 | Light-emitting diode crystal grain with fluorescent layer structure and its manufacturing method |
| US11/509,509 US20070145884A1 (en) | 2005-12-23 | 2006-08-22 | Light emitting diode die with at least one phosphor layer and method for forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200510132416XA CN1988188A (en) | 2005-12-23 | 2005-12-23 | Light-emitting diode crystal grain with fluorescent layer structure and its manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| CN1988188A true CN1988188A (en) | 2007-06-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200510132416XA Pending CN1988188A (en) | 2005-12-23 | 2005-12-23 | Light-emitting diode crystal grain with fluorescent layer structure and its manufacturing method |
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| Country | Link |
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| US (1) | US20070145884A1 (en) |
| CN (1) | CN1988188A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2009046576A1 (en) * | 2007-10-12 | 2009-04-16 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting device with a color-conversion structure |
| CN102208514A (en) * | 2010-03-29 | 2011-10-05 | 海洋王照明科技股份有限公司 | Integrated illuminating part and preparation method thereof |
| CN101749653B (en) * | 2008-12-11 | 2012-03-14 | 富士迈半导体精密工业（上海）有限公司 | Fluorescent powder coating method |
| CN104185907A (en) * | 2011-09-21 | 2014-12-03 | Ev集团E·索尔纳有限责任公司 | Method and substrate for manufacturing polychromatic layer and light-emitting diode with polychromatic layer |
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| SG173174A1 (en) * | 2009-02-05 | 2011-08-29 | Mitsubishi Chem Corp | Led light emitting device |
| US8721098B2 (en) | 2009-05-19 | 2014-05-13 | Koninklijke Philips Electronics N.V. | Light scattering and conversion plate for LEDs |
| US8384114B2 (en) | 2009-06-27 | 2013-02-26 | Cooledge Lighting Inc. | High efficiency LEDs and LED lamps |
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| US9231178B2 (en) | 2012-06-07 | 2016-01-05 | Cooledge Lighting, Inc. | Wafer-level flip chip device packages and related methods |
| KR102237168B1 (en) * | 2013-07-24 | 2021-04-07 | 에피스타 코포레이션 | Light-emitting dies incorporating wavelength-conversion materials and related methods |
| US9206958B2 (en) * | 2013-09-16 | 2015-12-08 | Osram Sylvania Inc. | Thin film wavelength converters and methods for making the same |
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Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
-
2005
- 2005-12-23 CN CNA200510132416XA patent/CN1988188A/en active Pending
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2006
- 2006-08-22 US US11/509,509 patent/US20070145884A1/en not_active Abandoned
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| WO2009046576A1 (en) * | 2007-10-12 | 2009-04-16 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting device with a color-conversion structure |
| CN101749653B (en) * | 2008-12-11 | 2012-03-14 | 富士迈半导体精密工业（上海）有限公司 | Fluorescent powder coating method |
| CN102208514A (en) * | 2010-03-29 | 2011-10-05 | 海洋王照明科技股份有限公司 | Integrated illuminating part and preparation method thereof |
| CN104185907A (en) * | 2011-09-21 | 2014-12-03 | Ev集团E·索尔纳有限责任公司 | Method and substrate for manufacturing polychromatic layer and light-emitting diode with polychromatic layer |
| CN104185907B (en) * | 2011-09-21 | 2017-11-24 | Ev集团E·索尔纳有限责任公司 | Manufacture the method and substrate and the light emitting diode with multicolor layer of multicolor layer |
| CN108183159A (en) * | 2017-11-17 | 2018-06-19 | 广州市香港科大霍英东研究院 | A kind of micro- light emitting diode, micro- active display structure of arrays and packaging method |
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| US20070145884A1 (en) | 2007-06-28 |
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