CN1987628A - Liquid crystal display element - Google Patents
Liquid crystal display element Download PDFInfo
- Publication number
- CN1987628A CN1987628A CN 200610171144 CN200610171144A CN1987628A CN 1987628 A CN1987628 A CN 1987628A CN 200610171144 CN200610171144 CN 200610171144 CN 200610171144 A CN200610171144 A CN 200610171144A CN 1987628 A CN1987628 A CN 1987628A
- Authority
- CN
- China
- Prior art keywords
- liquid crystal
- crystal display
- film
- display element
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明涉及一种液晶显示元件，提供一种解决以下全部问题的结构：即场序液晶显示元件，在形成像素区域的液晶层厚度小的结构的情况下，在现有的方法中难以将处于基板间的密封材料良好地硬化形成。虽然在像素区域内设置液晶层厚度调节膜可以解决，但对向电极和遮光膜的层叠结构受到阻碍，产生由对向电极的电阻增大而造成的显示不良。因此本发明为在像素区域内前基板(23)的内面上设置遮光膜(19)，并以覆盖该遮光膜的方式设置液晶层厚度调节膜(3)，在其上层设置由ITO膜(4)构成的对向电极，经由设置于液晶层厚度调节膜(3)上的接触孔(7)将ITO膜(4)和遮光膜(19)连接。
The present invention relates to a liquid crystal display element, and provides a structure that solves all of the following problems: that is, in a field sequential liquid crystal display element, in the case of a structure in which the thickness of the liquid crystal layer forming the pixel area is small, it is difficult to convert the field sequential liquid crystal display element in the conventional method. The sealing material between the substrates is well cured and formed. Although providing a liquid crystal layer thickness adjustment film in the pixel area can solve the problem, the laminated structure of the counter electrode and the light shielding film is hindered, resulting in poor display caused by the increase in the resistance of the counter electrode. Therefore the present invention is to arrange light-shielding film (19) on the inner surface of front substrate (23) in the pixel region, and arrange the liquid crystal layer thickness adjustment film (3) in the mode of covering this light-shielding film, set by ITO film (4) on its upper layer ) to connect the ITO film (4) and the light-shielding film (19) via the contact hole (7) provided on the liquid crystal layer thickness adjustment film (3).
Description
Technical field
The present invention relates to liquid crystal display cells, more particularly, relate to the liquid crystal display cells that has used field-sequential mode.
Background technology
In recent years, the field preface that does not need color filter is made progress with the exploitation of liquid crystal display cells.In the field-sequential mode, owing to carry out the colour demonstration by switching the RGB three-color light source at a high speed, thereby do not use the color filter that is used for common liquid crystal display cells, use the subtend substrate of the counter electrode that possesses the photomask that constitutes by Cr film etc. and constitute by nesa coating mutually on the contrary.At this, counter electrode extends to outside the pixel region, is electrically connected with electrode on the array base palte and wiring.
Field preface liquid crystal display cells is corresponding for seeking high speed, and uses the strong medium liquid crystal as the liquid crystal of enclosing between two substrates that constitute liquid crystal display cells.At this, in order to enclose liquid crystal, known have a following method, for example liquid crystal is dripped on the substrate, and at the periphery coating encapsulant of above-mentioned two substrates, and adhesive base plate, afterwards, make sealing material curing by heat and light, liquid crystal is enclosed.When using the strong medium liquid crystal as liquid crystal material, the scope of thickness for being best suited for of the liquid crystal layer between two substrates of formation liquid crystal display cells than narrow 1～3 μ m of regular situation.Therefore, also there is configuration to be used for the thickness of the liquid crystal layer in the pixel region is kept the situation of uniform liner.
But, for there is following problem in the thickness that makes liquid crystal layer than regular situation is narrow.As mentioned above, in operation, if the space between the substrate of this moment is narrow with two base plate bondings, then be clipped in the encapsulant diffusion between the substrate, and the unhardened resin of encapsulant etc. is diffused into liquid crystal and encloses the zone, therefore produces liquid crystal pollution, and demonstration is bad until occurring.Then can not produce this problem if improve the viscosity of encapsulant, but in this case, encapsulant can not be pressed off fully when adhesive base plate, therefore, the space of panel periphery portion enlarges.Therefore, exist in the periphery of pixel region and the uneven thickness that liquid crystal layer appears in central portion, and cause the problem (for example, with reference to Patent Document 1) that shows color spot.
For addressing these problems, known have following such technology, by the encapsulant area surrounded that is coated on subtend substrate periphery portion, regulate film and form counter electrode thereon by the thickness of liquid crystal layer that is provided for regulating thickness of liquid crystal layer, and take into account structure and the good sclerosis the two (for example with reference to Patent Document 2) of encapsulant that the thickness of liquid crystal layer in the pixel region is dwindled.
Patent Document 1: the spy opens 2003-280007 communique (Fig. 6)
Patent Document 2: the spy opens 2004-264606 communique (Fig. 4)
According to said method, can avoid the problem of sealing material curing, can reduce simultaneously the thickness of the liquid crystal layer of the pixel region that encapsulant surrounds, but the following problem that exists this method to cause.That is, when adopting said method, need on the subtend substrate, between photomask and counter electrode, form the dielectric film of regulating film as thickness of liquid crystal layer.This be because, counter electrode is the electrode that is used for liquid crystal applied voltages, it is desirable to, if remove oriented film, then it is the superiors' (apart from glass substrate layers farthest), in addition, and from considering with the adhesion of bottom and the optimization aspect of anti-reflection effect, it is desirable to, photomask forms on glass substrate.
And in this structure, above-mentioned problem is solved, but has produced other such unfavorable condition of lateral cross talk.Originally the ratio resistance that was used for the nesa coating of counter electrode only is about 0.00002 Ω cm, and thickness is about 0.1 μ m, and therefore, the resistance of counter electrode also can be described as low resistance.Therefore, at the position that the connecting portion that is connected with array base palte outside pixel region leaves, be near the central authorities of pixel region, and array base palte between applied the resistance components of counter electrode self, thereby it is bad to be easy to generate the such demonstration of lateral cross talk.But the nesa coating of common subtend substrate is by stacked the forming of low-resistance metal film as photomask, therefore, can suppress to be increased and the lateral cross talk that causes is bad by resistance components.
Yet, according to above-mentioned structure, because hindered the counter electrode in the pixel region and the stepped construction of photomask as the formation of the dielectric film in the pixel region of this solution, therefore, low-resistance metal film of above-mentioned photomask can not be made sufficient contribution to the electric conductivity of counter electrode.Therefore, counter electrode becomes high resistance, causes that lateral cross talk is bad.
Summary of the invention
The invention provides a kind of liquid crystal display cells, form in the sealing of carrying out the pixel region periphery well, and have in the liquid crystal display cells of structure of the thickness of liquid crystal layer that reduces pixel region, it is bad to suppress above-mentioned lateral cross talk, and has good display characteristic.
The invention provides a kind of liquid crystal display cells, encapsulant by utilizing the periphery outside being formed at pixel region is with two base plate bondings, the liquid crystal of portion's inclosure within it forms, it is characterized in that, one of them of these two substrates is the subtend substrate, this subtend substrate possesses: the photomask that contains the metal film that forms on the transparent insulating substrate, the thickness of liquid crystal layer that covers this photomask is regulated film, and regulate the counter electrode that the nesa coating that forms on the film constitutes by above-mentioned thickness of liquid crystal layer, the above-mentioned thickness of liquid crystal layer in pixel region is regulated and is formed with at least one on the film and is used for contact hole that counter electrode is connected with photomask.
Liquid crystal display cells of the present invention has following structure: promptly, in the pixel region of subtend substrate, form after the dielectric film, in pixel region, form the connecting portion that the nesa coating with counter electrode is connected with photomask, reduce the structure of the thickness of the liquid crystal layer in the pixel region thus, and realized that no liquid crystal pollutes, no peripheral space is bad, the effect with good display characteristic of no lateral cross talk.
Description of drawings
Fig. 1 is the outward appearance of the liquid crystal display cells of expression one embodiment of the invention;
Fig. 2 is near the planimetric map and the sectional view of encapsulant of the liquid crystal display cells of expression one embodiment of the invention;
Fig. 3 is the planimetric map and the sectional view of metacoxal plate of the liquid crystal display cells of expression one embodiment of the invention;
Fig. 4 is the planimetric map and the sectional view of prebasal plate of the liquid crystal display cells of expression one embodiment of the invention;
Fig. 5 is the process profile of prebasal plate of the liquid crystal display cells of expression one embodiment of the invention;
Fig. 6 is the prebasal plate of liquid crystal display cells of expression one embodiment of the invention and the sectional view of metacoxal plate;
Fig. 7 is the prebasal plate of liquid crystal display cells of expression one embodiment of the invention and the sectional view of metacoxal plate.
Embodiment
Fig. 1 represents the outward appearance of the liquid crystal display cells of the embodiment of the invention.Liquid crystal display cells shown in Fig. 1 be will as being positioned at of a substrate observe to show side opposition side metacoxal plate 24 and to observe the substrate that shows side as being positioned at of another substrate be that prebasal plate 23 is bonded via the encapsulant 18 that frame shape between two substrates forms, have the structure of in by encapsulant 18 and two substrates area surrounded, having enclosed liquid crystal 16.Encapsulant 18 forms in the outside of pixel region 19, and the inner face on the metacoxal plate 24 in pixel region 19 is formed with TFT described later etc.
Near the encapsulant 18 of Fig. 2 (1) expression liquid crystal display cells planimetric map.In addition, the prebasal plate 23 at the position shown in the B-B line and the sectional view of metacoxal plate 24 in Fig. 2 (2) expression 2 (1).
This used for liquid crystal display element is in the field sequential liquid crystal display element, and do not have color filter.This liquid crystal display cells is to be the active matrix liquid crystal display element of active component with TFT, is that a pair of transparent glass substrate 1 forms via encapsulant 18 joints basically, in the sealing area surrounded that is made of encapsulant 18, encloses liquid crystal layer 16.In the inner face of a pair of transparent glass substrate 1 mutual subtend, the opposition side of substrate, observer's side of for example showing is that near the inscape that is formed with TFT described later the encapsulant 18 of inner face of substrate (below be called metacoxal plate) 24 of rear side is gate insulating film 14 and passivating film 15 and oriented film 17 therein.On the other hand, promptly be provided with at another substrate: for example photomask with electrical conductivity 2 that constitutes by the stacked film of chromium oxide (CrOx:x is a positive number) and crome metal (Cr), the thickness of liquid crystal layer adjusting film 3 that for example constitutes by silicon nitride (SiNx:x is a positive number) dielectric film and the nesa coating 4 that for example constitutes by ITO etc. as the inner face of the front side substrate of the observer's side that shows (below be called prebasal plate) 23, oriented film 7, and then, on thickness of liquid crystal layer adjusting film 3, be formed with recess 5 at the position that forms encapsulant 18.
Secondly, TFT and the pixel electrode of being located at metacoxal plate 24 inner faces described.The planimetric map that Fig. 3 (1) expression is seen from the inner face of the metacoxal plate 24 that is formed with TFT.And, the sectional view of the metacoxal plate 24 at the position shown in the C-C line in Fig. 3 (2) presentation graphs 3 (1).With reference to Fig. 3 (1), (2), the TFT22 that is located at metacoxal plate 24 inner faces by public CS electrode wiring 12 on the real estate that is formed at metacoxal plate 24 and grid wiring 8, cover transparent gate insulating film 14 that the roughly whole zone at substrate of this grid wiring 8 forms, form at the i N-type semiconductor N film 9 that forms with grid wiring 8 subtends on the gate insulating film 14, the source electrode 10 that on i N-type semiconductor N film 9, forms and drain electrode 11, the passivating film 15 that covers i N-type semiconductor N film 9 and source electrode 10, drain electrode 11 via n N-type semiconductor N film 20.On passivating film 15, be provided with TFT contact hole 12.A plurality of pixel electrode 21 is made of nesa coatings such as ITO, and is formed on the passivating film 15, is connected with drain electrode 11 corresponding to the TFT22 of its pixel electrode 21 via TFT contact hole 12 in the distolateral end of one.And then form oriented film 17, make it cover TFT22 and passivating film 15.In addition, on the grid wiring 8 on the F-F line of Fig. 3 (1), be formed with column liner 6.In addition, as described later, be formed with contact hole 7 (not shown) being positioned on the subtend substrate (prebasal plate 23) on the grid wiring 8 on the E-E line of Fig. 3 (1).
Secondly, prebasal plate 23 is described.At first, the planimetric map of the prebasal plate 23 seen from inner face of Fig. 4 (1) expression.And then the sectional view at position shown in the D-D line in Fig. 4 (2) presentation graphs 4 (1).Among Fig. 4 (1), on the photomask 2 of the rectangular configuration of peristome 2a that is cut to the essentially rectangular shape that will be corresponding with the pixel electrode 21 on the metacoxal plate 24, shown in Fig. 4 (2), covering is regulated film 3 by the thickness of liquid crystal layer that SiNx film etc. constitutes, and then regulates the ITO film 4 that is provided with on the film 3 as the transparent conductivity of counter electrode at thickness of liquid crystal layer.ITO film 4 is electrically connected with above-mentioned photomask 2 via the contact hole of being located on the thickness of liquid crystal layer adjusting film 37.The pattern of photomask 2 becomes the shape that connects continuously outside the zone of peristome 2a.On ITO film 4, be formed with the column liner 6 that constitutes by photosensitive resin film.At this, if column liner 6 is overlapping with contact hole 7, then be difficult to the thickness of liquid crystal layer is kept evenly, therefore, shown in for example Fig. 4 (1), dispose like that, can be or not both are overlapping and form yet.And then coating is formed with oriented film 17 thereon.
Secondly, describe with reference to the method for making of Fig. 5 (1)～(5) the embodiment of the prebasal plate 23 that becomes feature of the present invention.At this, Fig. 5 (1)～(5) are the process profiles that is equivalent to the position of Fig. 4 (2).At first, CrOx, the Cr of thickness 150nm of continuous film forming thickness 10nm on transparent glass insulation substrate 1 such as the middle use of Fig. 5 (1) splash method after carrying out photomechanics, carry out etching, resist lift-off processing, form the pattern of photomask 2.In addition,, improve shaded effect, and also can use chromium nitride (CrNx) replaced C r, constitute the stepped construction of CrOx and CrNx for improving the density of photomask.Under this situation, compare, can obtain sufficient shaded effect with thin thickness with Cr.
Afterwards, in Fig. 5 (2), the SiNx (silicon nitride) of film forming thickness 700nm after having carried out the photomechanical production operation, carries out etching, resist lift-off processing, forms thickness of liquid crystal layer and regulates film 3 and contact hole 7.At this moment, shown in Fig. 2 (2), also the SiNx film of positive bottom that forms the position of encapsulant 18 can be removed and form recess 5.
Secondly, in Fig. 5 (3), film forming on whole such as use splash method becomes the ITO film 4 of counter electrode.At this moment, by via contact hole 7 with photomask 2 and 4 conductings of ITO film, thereby can reduce the resistance of counter electrode.At this, further increase owing to will connect the area of the contact hole 7 of photomask 2 and ITO film 4, all remove so for example also the thickness of liquid crystal layer on the photomask 2 can be regulated film 3, but exist etching period to increase and the low problem of productivity in this case.On the other hand,, contact hole 7 is being carried out under the situation of opening, having the effect that can suppress the needed area of etching and also can shorten etching period as present embodiment.In addition, in normal circumstances, for reducing the resistance of counter electrode, it is just enough only to form a plurality of contact holes 7.
Secondly, in Fig. 5 (4), the photosensitive resin film (not shown) about coating thickness 2 μ m after having carried out photomechanics, forms the column liner 6 with predetermined altitude (for example 1.5 μ m).On prebasal plate 23, thickness of liquid crystal layer in display pixel area is regulated and is formed one on the film 3 at least and be used for contact hole 7 that ITO film 4 and photomask 2 as counter electrode are electrically connected.At last, in Fig. 5 (5), coating also forms oriented film 17, makes the prebasal plate 23 of the embodiment of the invention.
More than metacoxal plate 24 and prebasal plate 23 are illustrated, but at this, in order clearly to use column liner 6 and encapsulant 18 to make the mutual subtend of two substrates and such as shown in Figures 1 and 2 position relation at the formation position of the contact hole 7 that forms on the prebasal plate 23 and the TFT22 that forms when bonding on metacoxal plate 24, Fig. 6 (1) is illustrated in the prebasal plate 23 at the position shown in the E-E line of Fig. 3 (1) and the sectional view of metacoxal plate 24.Shown in Fig. 3 (1) and Fig. 6 (1),, the TFT22 of relative metacoxal plate 24 upper surface shape inequalities with it goes up the contact hole 7 that forms prebasal plate 23, it would be better that formation is better on the smooth grid wiring 8 of apparent surface.Therefore, realized to carry out reliably the effect of orientation control that the milled processed of oriented film 7 is carried out.
Secondly, for the formation position of the column liner 6 on the clear and definite prebasal plate 23 and the position relation of TFT22, the prebasal plate 23 at the position shown in the F-F line of Fig. 6 (2) presentation graphs 3 (1) and the sectional view of metacoxal plate 24.Shown in Fig. 3 (1) and Fig. 6 (2), the column liner 6 of prebasal plate 23, the TFT22 of the surface configuration inequality of relative metacoxal plate 24 with it are gone up and formed, and be better not as good as forming on the grid wiring 8 of relatively flat.Therefore, realized easily to control the effect of thickness of liquid crystal layer.
And then, for the peristome 2a that forms on the photomask 2 on the clear and definite prebasal plate 23 and the position relation of the pixel electrode 21 on the metacoxal plate 24, the prebasal plate 23 at the position shown in the D-D line of Fig. 7 presentation graphs 4 (1) and the sectional view of metacoxal plate 24.The aforesaid encapsulant 18 of clamping between prebasal plate 23 and metacoxal plate 24, and column liner 6 contacts with the inner face of metacoxal plate 24, guarantees thickness of liquid crystal layer.Contact hole 7 and column liner 6 are to form in the nonoverlapping mode in each position.In addition, the position of the pixel electrode 21 on the metacoxal plate 24 forms in the position with respect to the peristome 2a of the photomask 2 of prebasal plate 23, simultaneously, (distance of the prebasal plate 23 of subtend and the inner face of metacoxal plate 24: the space) state of mainly regulating film 3 with reflection encapsulant 18 and thickness of liquid crystal layer is stipulated in the thickness d of the liquid crystal layer 16 of this position clamping.
Like this, the resistance of the counter electrode when being formed with the connecting portion that is electrically connected by contact hole 7 is measured, and with the situation that does not have contact hole 7, promptly the situation that only forms counter electrode by ITO film 4 is compared, and can obtain the low resistance value about 1/10～1/100.Like this, in order to obtain the resistance value lower, so preferably form photomask 2 than ITO film 4 low materials by resistance value than situation about only forming by ITO film 4.Between this prebasal plate 23 and metacoxal plate 24, form the encapsulant 18 of frame shape, by enclosing liquid crystal 16 and carrying out in the bonding liquid crystal display cells that forms, not only can not cause the bad of liquid crystal pollution and peripheral space, nor can cause that to increase the lateral cross talk demonstration that produces bad because of the resistance of counter electrode.
In addition, as long as thickness of liquid crystal layer in display pixel area is regulated and is formed one on the film 3 at least and be used for the contact hole 7 that is connected with photomask 2 as counter electrode ITO film 4, but shown in Fig. 4 (1), a plurality of pixel electrodes 21 in the more preferably corresponding display pixel area form at least more than one respectively.Under this situation, can make corresponding to the resistance value of each counter electrode 2,4 of each pixel electrode 21 much the same in the pixel display area territory, therefore, realize following these effects: can suppress the demonstration color spot that above-mentioned lateral cross talk shows that bad deviation causes, and can improve the bad boundary of demonstration.
Have, in the present embodiment, the SiNx film that forms 700nm thickness is regulated film 3 as liquid crystal layer, but is not limited thereto, and also can use other transparent dielectric film again, for example SiOx film etc.In addition, can also apply the resin molding that forms transparent insulating.Under this situation, owing to thickness of liquid crystal layer can be regulated the flattening surface of film 3, so can make at least with the thickness of the liquid crystal layer 16 in the zone of pixel electrode 21 subtends evenly, the while can similarly be handled the grinding of oriented film 17, therefore, realized improving the effect of display quality.And then, have photosensitive resin molding by use, thereby can use photomechanics and easily form contact hole 7.
In liquid crystal display cells of the present invention, regulate film 3 owing to be formed with thickness of liquid crystal layer, under the situation that the thickness of the liquid crystal layer in pixel region 19 is little even die, follow the liquid crystal pollution that encapsulant 18 forms and peripheral space is bad also can not produce, be not only this point and in pixel region 19, be provided with and regulate the contact hole 7 on the film 3 is connected ITO film 4 with photomask 2 position via being located at thickness of liquid crystal layer, therefore, realized following effect, promptly can not produce by the resistance of counter electrode and increase and the demonstration that causes is bad.
Claims (9)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005371173 | 2005-12-23 | ||
| JP2005371173 | 2005-12-23 | ||
| JP2006240198 | 2006-09-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1987628A true CN1987628A (en) | 2007-06-27 |
Family
ID=38184477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610171144 Pending CN1987628A (en) | 2005-12-23 | 2006-12-25 | Liquid crystal display element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1987628A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101765871B (en) * | 2007-12-06 | 2011-06-15 | 夏普株式会社 | Display device |
| CN103380450A (en) * | 2011-02-15 | 2013-10-30 | 三菱电机株式会社 | Image processing device, image display device, image processing method, and image processing program |
| CN103389599A (en) * | 2012-05-07 | 2013-11-13 | 三星显示有限公司 | Display device and manufacturing method thereof |
| CN103926754A (en) * | 2013-12-27 | 2014-07-16 | 厦门天马微电子有限公司 | Array substrate and manufacturing method thereof, display panel and display device |
| CN105761626A (en) * | 2016-03-17 | 2016-07-13 | 东莞东山精密制造有限公司 | Display module and display device |
-
2006
- 2006-12-25 CN CN 200610171144 patent/CN1987628A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101765871B (en) * | 2007-12-06 | 2011-06-15 | 夏普株式会社 | Display device |
| CN103380450A (en) * | 2011-02-15 | 2013-10-30 | 三菱电机株式会社 | Image processing device, image display device, image processing method, and image processing program |
| CN103380450B (en) * | 2011-02-15 | 2016-07-06 | 三菱电机株式会社 | Image processing device, image display device, and image processing method |
| US9491446B2 (en) | 2011-02-15 | 2016-11-08 | Mitsubishi Electric Corporation | Image processing device, image display device, image processing method, and image processing program |
| CN103389599A (en) * | 2012-05-07 | 2013-11-13 | 三星显示有限公司 | Display device and manufacturing method thereof |
| CN103389599B (en) * | 2012-05-07 | 2017-08-29 | 三星显示有限公司 | Display device and its manufacture method |
| US10338437B2 (en) | 2012-05-07 | 2019-07-02 | Samsung Display Co., Ltd. | Display device and manufacturing method thereof |
| CN103926754A (en) * | 2013-12-27 | 2014-07-16 | 厦门天马微电子有限公司 | Array substrate and manufacturing method thereof, display panel and display device |
| CN105761626A (en) * | 2016-03-17 | 2016-07-13 | 东莞东山精密制造有限公司 | Display module and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101335276B1 (en) | Array substrat, display panel having the same and fabricating of display panel | |
| JP3539330B2 (en) | Liquid crystal display panel and method of manufacturing the same | |
| CN104965366A (en) | Structure and manufacturing method of array colored film integrated type liquid crystal display panel | |
| CN109143774A (en) | The production method of mask plate and metal wire | |
| US20030199114A1 (en) | Electro-optical device, method for fabricating the same, and electronic apparatus | |
| CN110174803A (en) | Array substrate and preparation method thereof | |
| TW594163B (en) | Structure of light-shielding frame for liquid crystal display and manufacturing method thereof | |
| CN109188764A (en) | Liquid crystal display panel and preparation method thereof | |
| CN102819138A (en) | Array base plate and display device | |
| WO2019056993A1 (en) | Display panel and manufacturing method thereof and display device | |
| KR100795854B1 (en) | LCD display device | |
| KR20010009157A (en) | Liquid crystal display and method for fabricating the same | |
| CN112154369A (en) | Display substrate and manufacturing method thereof, display panel, and display device | |
| TW482910B (en) | Liquid crystal display device | |
| US6933993B2 (en) | Method of forming a color filter layer on an array substrate and device thereof | |
| CN1987628A (en) | Liquid crystal display element | |
| JPH01265231A (en) | liquid crystal display device | |
| JP3662103B2 (en) | Manufacturing method of liquid crystal panel | |
| US20040125293A1 (en) | Integrated color filter and fabricating method thereof | |
| WO2021088138A1 (en) | Coa-type array substrate and manufacturing method therefor | |
| CN111682030A (en) | Repaired array substrate and repairing method, and display panel | |
| CN116631351B (en) | Color film substrate, driving method thereof and display panel | |
| CN102289108A (en) | Pixel structure and liquid crystal display panel with same | |
| CN101211119A (en) | LCD device preparation method and mask used in the method | |
| KR20050054280A (en) | Liquid crystal display device and fabrication method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20070627 |