CN1983032A - Scale and method for measuring photoetching alignment precision - Google Patents
Scale and method for measuring photoetching alignment precision Download PDFInfo
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- CN1983032A CN1983032A CN 200510111412 CN200510111412A CN1983032A CN 1983032 A CN1983032 A CN 1983032A CN 200510111412 CN200510111412 CN 200510111412 CN 200510111412 A CN200510111412 A CN 200510111412A CN 1983032 A CN1983032 A CN 1983032A
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- scale
- alignment
- square
- alignment precision
- box mark
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- 238000001259 photo etching Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 14
- 230000001105 regulatory effect Effects 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Length Measuring Devices By Optical Means (AREA)
Abstract
A method for measuring precision of registration photo-etching includes nestling up scale on display, regulating position of alignment box mark according to position of said scale for making the to be superposed with each other on internal square or on external square, judging alignment precision of said alignment box mark. The scale used for realizing said method is also disclosed.
Description
Technical field
The present invention relates to the chip manufacturing field in a kind of semiconductor technology, especially a kind of scale and method of measuring photoetching alignment precision.
Background technology
In chip manufacturing proces, to just can finish whole manufacturing process by the multilayer photoetching process usually.Measurement technology after the photoetching, promptly alignment precision is measured technology, is check lower floor and the satisfactory vital step of whether aiming at of litho pattern position, upper strata.
The traditional measurement figure that uses is called alignment box mark (Boxmark) at present.This alignment box mark is made up of inside casing and two squares of housing, and two foursquare centers are identical, and foursquare limit is parallel to each other.Wherein the inside casing square length of side is 10 μ m, and the foursquare length of side of housing is 20 μ m.Housing is made by the following layer photoetching engineering that needs are aligned, and inside casing is made by current layer photoetching engineering.The coordinate and the size of housing in the waveform that alignment precision mensuration machine draws by the microscope image is measured, and calculate the alignment side-play amount of horizontal ordinate direction and ordinate direction by the coordinate difference of left and right side frame relatively, compare by this side-play amount and the desired specification of goods at last, thereby whether the aligning of judging between this two layer photoetching meets the requirements.Image and measurement waveform that Fig. 1 obtains under the optical microscope of the machine of mensuration for this alignment box mark.As shown in Figure 1, measuring waveform demonstrates tangible crest and trough owing to the light and shade of mark frame is different, and corresponding one by one with the interior housing of mark.
Generally speaking, above-mentioned waveform is convenient to measure very much, but problem will take place part aluminum wiring engineering.Reason is at present before the aluminum wiring film forming, generally adopts tungsten to anti-carve technology (W-ETCHBACK) technology and tungsten CMP (Chemical Mechanical Polishing) process (W-CMP) technology is carried out the tungsten planarization.The alignment box mark section structure that different process constitutes is different mutually.Fig. 3 anti-carves technology alignment box mark section structure synoptic diagram for aluminum wiring engineering in the prior art.As shown in Figure 3, the below be 1, and field 1 a top center section is an aluminium lamination, and both sides are tungsten, and the tungsten both sides are the interlayer film, and the top is a photoresist.Fig. 5 is an aluminum wiring engineering chemistry mechanical polishing process alignment box mark section structure synoptic diagram in the prior art.As shown in Figure 5, the below be 1, and 1 a top center section is an aluminium lamination, and both sides are the interlayer film, and the interlayer film is an aluminium lamination, is photoresist above again.Fig. 2 shows photo and waveform for the light that the aluminum wiring engineering anti-carves alignment box mark in the technology.Fig. 4 is that the light of aluminum wiring engineering chemistry mechanical polishing process alignment box mark shows photo and waveform.As Fig. 2, shown in Figure 4, because the crystal grain of aluminium itself is than other material (as: monox, silicon nitride, polysilicon etc.) much bigger, waveform is very mixed and disorderly, Wave crest and wave trough can't be corresponding one by one with housing in the mark, will cause the error measurement pilosity like this, the time of causing go up and material on waste and seriously hinder normally carrying out of production.
Prior art can't be measured owing to its process structure reason causes alignment precision for the part goods, slows down thereby produce the production line velocity of liquid assets, the waste equipment time, increases the weight of personnel's problems such as workload.
Summary of the invention
Technical matters to be solved by this invention provides a kind of scale and method of measuring photoetching alignment precision, can measure alignment precision, and improves the velocity of liquid assets of production line, guarantees normal stable the carrying out that produces.
For solving the problems of the technologies described above, a kind of technical scheme of measuring the scale of photoetching alignment precision of the present invention is, this scale is made up of inside and outside two squares that the center overlaps, four limits are parallel to each other, be 10 μ m wherein in the interior square length of side, the square length of side outside is 20 μ m, also comprise with above-mentioned foursquare center being horizontal and vertical two coordinate axis of initial point, this coordinate axis is marked with scale.
A kind of method of measuring photoetching alignment precision of the present invention may further comprise the steps: the first step is attached to scale on the display; Second step, adjust the position of alignment box mark according to the position of this scale, make both overlapping at interior square or square outside; The 3rd goes on foot, and judges the alignment precision of this alignment box mark.
The present invention has the scale of scale by scale, can measure the alignment precision that prior art can't be measured.
Description of drawings
Below in conjunction with drawings and Examples the present invention is further described:
Fig. 1 is that the light of prior art alignment box mark shows photo and waveform;
Fig. 2 shows photo and waveform for the light that existing aluminum wiring engineering anti-carves alignment box mark in the technology;
Fig. 3 anti-carves alignment box mark section structure synoptic diagram in the technology for existing aluminum wiring engineering;
Fig. 4 shows photo and waveform for the light of alignment box mark in the existing aluminum wiring engineering chemistry mechanical buffing;
Fig. 5 is alignment box mark section structure synoptic diagram in the existing aluminum wiring engineering chemistry mechanical buffing;
Fig. 6 is a scale synoptic diagram of the present invention;
Fig. 7 is an embodiment of the invention operation chart;
Fig. 8 uses front and back circulation obstruction time comparison diagram for scale;
Fig. 9 uses the unusual incidence comparison diagram in front and back for scale.
Embodiment
Fig. 6 is a scale synoptic diagram of the present invention.As shown in Figure 6, a kind of scale of measuring photoetching alignment precision of the present invention, form by inside and outside two squares that the center overlaps, four limits are parallel to each other, be 10 μ m wherein in the interior square length of side, the square length of side outside is 20 μ m, also comprise with above-mentioned foursquare center being horizontal and vertical two coordinate axis of initial point, this coordinate axis is marked with scale.Wherein, the scale size of described coordinate axis is set according to the needs of product, and the scale that described coordinate axis is marked with can 0.5 μ m be a unit.
When utilizing tape measure photoetching alignment precision of the present invention, it may further comprise the steps: the first step is attached to scale on the display; In second step, operating personnel can want the alignment box mark position of measured alignment precision according to the position adjustment of this scale, and the housing or the inside casing that reach both match; The 3rd goes on foot, and judges the alignment precision of this alignment box mark.In the first step, except being posted on scale on the display, can also use on measuring equipments such as microscope, maybe this scale be weaved on the software equipment of wanting of what is the need in office and used.
Specifically can comprise dual mode: when the position of adjusting alignment box mark in second step overlaps both squares, if square outside also overlaps, the alignment precision of then judging this alignment box mark meets the requirements, if square outside can not overlap, then calculate alignment box mark and scale square how many scales of deviation outside, whether in the regulation scale by the scale on the coordinate axis.When the position of adjusting alignment box mark in second step overlaps both squares outside, if also overlap at interior square, the alignment precision of then judging this alignment box mark meets the requirements, if can not overlap at interior square, then calculate alignment box mark and scale at interior square how many scales of deviation, whether in the regulation scale by the scale on the coordinate axis.
Fig. 7 is an embodiment of the invention operation chart.As shown in Figure 7, the position of scale is positioned at display or detects on the equipment such as eyepiece, and alignment box mark that will be detected during use moves on under the scale, and both housing 6 is coincided, judge again whether inside casing 7 overlaps fully, if overlap fully then this alignment box mark alignment precision is no problem.If do not overlap, can see that inside casing has deviation, at this moment can judge the inside casing amount of deflection by scale 8, judge whether in allowed limits this amount of deflection.
The present invention adopts the scale of band scale to measure photoetching alignment precision, can measure the alignment precision that can't measure in the prior art under more than or equal to the situation of 0.8um measuring alignment precision, has improved the velocity of liquid assets of product.Fig. 8 uses front and back circulation obstruction time comparison diagram for scale.Fig. 9 uses the unusual incidence comparison diagram in front and back for scale.As Fig. 8, shown in Figure 9, the present invention has improved products in circulation speed greatly, has reduced unusual incidence.Above-mentioned contrast can be as shown in the table:
| LOT Stop incidence | The circulation obstruction time | |
| Before the use | 52％ | 105 minutes/LOT |
| After the |
10％ | 20 minutes/LOT |
Claims (5)
1. scale of measuring photoetching alignment precision, it is characterized in that, this scale is made up of inside and outside two squares that the center overlaps, four limits are parallel to each other, be 10 μ m wherein in the interior square length of side, the square length of side outside is 20 μ m, also comprise with above-mentioned foursquare center being horizontal and vertical two coordinate axis of initial point, this coordinate axis is marked with scale.
2. a kind of scale of measuring photoetching alignment precision according to claim 1 is characterized in that it is unit with 0.5 μ m that described coordinate axis is marked with scale.
3. method of utilizing the described tape measure photoetching alignment precision of claim 1, it is characterized in that it may further comprise the steps: the first step is attached to scale on the display; Second step, adjust the position of alignment box mark according to the position of this scale, make both overlapping at interior square or square outside; The 3rd goes on foot, and judges the alignment precision of this alignment box mark.
4. a kind of method of measuring photoetching alignment precision according to claim 3, it is characterized in that, the position of adjusting alignment box mark in second step makes both when interior square overlaps, if square outside also overlaps, the alignment precision of then judging this alignment box mark meets the requirements, if square outside can not overlap, then calculate the numerical value that square outside departs from by the scale on the coordinate axis.
5. a kind of method of measuring photoetching alignment precision according to claim 3, it is characterized in that, when the position of adjusting alignment box mark in second step overlaps both squares outside, if also overlap at interior square, the alignment precision of then judging this alignment box mark meets the requirements, if can not overlap at interior square, the numerical value that departs from by the inclusive square of the scale on the coordinate axis then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510111412 CN1983032A (en) | 2005-12-13 | 2005-12-13 | Scale and method for measuring photoetching alignment precision |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510111412 CN1983032A (en) | 2005-12-13 | 2005-12-13 | Scale and method for measuring photoetching alignment precision |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1983032A true CN1983032A (en) | 2007-06-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200510111412 Pending CN1983032A (en) | 2005-12-13 | 2005-12-13 | Scale and method for measuring photoetching alignment precision |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101458454B (en) * | 2007-12-14 | 2010-09-29 | 上海华虹Nec电子有限公司 | Method for simultaneously monitoring photolithography exposure condition and registration photoetching precision |
| CN102364301A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Method for Measuring Stencil Overlay Accuracy |
| CN101689026B (en) * | 2007-11-06 | 2012-12-05 | 株式会社尼康 | Moving body device, pattern forming device, exposure device, and device manufacturing method |
-
2005
- 2005-12-13 CN CN 200510111412 patent/CN1983032A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101689026B (en) * | 2007-11-06 | 2012-12-05 | 株式会社尼康 | Moving body device, pattern forming device, exposure device, and device manufacturing method |
| CN101458454B (en) * | 2007-12-14 | 2010-09-29 | 上海华虹Nec电子有限公司 | Method for simultaneously monitoring photolithography exposure condition and registration photoetching precision |
| CN102364301A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Method for Measuring Stencil Overlay Accuracy |
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