CN1974880B - Double-tank device for electrochemical preparation of porous silicon - Google Patents
Double-tank device for electrochemical preparation of porous silicon Download PDFInfo
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- CN1974880B CN1974880B CN200610129434A CN200610129434A CN1974880B CN 1974880 B CN1974880 B CN 1974880B CN 200610129434 A CN200610129434 A CN 200610129434A CN 200610129434 A CN200610129434 A CN 200610129434A CN 1974880 B CN1974880 B CN 1974880B
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- porous silicon
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- 229910021426 porous silicon Inorganic materials 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 238000005260 corrosion Methods 0.000 claims abstract description 23
- 230000007797 corrosion Effects 0.000 claims abstract description 23
- 238000002848 electrochemical method Methods 0.000 claims abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 5
- 239000004743 Polypropylene Substances 0.000 claims description 3
- -1 polypropylene Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 22
- 229910052710 silicon Inorganic materials 0.000 abstract description 18
- 239000010703 silicon Substances 0.000 abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 238000003825 pressing Methods 0.000 abstract description 10
- 238000001465 metallisation Methods 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 210000005056 cell body Anatomy 0.000 description 7
- 230000009977 dual effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000008151 electrolyte solution Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BVDPFTQTMQKPGQ-UHFFFAOYSA-N ethanol hydrofluoride Chemical compound F.CCO BVDPFTQTMQKPGQ-UHFFFAOYSA-N 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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Abstract
本发明涉及一种电化学法制备多孔硅的双槽装置，属于制备多孔硅的装置。该双槽装置包括槽体，在槽体内开设固定插槽，在固定插槽上插入“凹”形基板，采用螺钉将压板基板及垫板连接为一体，在由基板与压板及垫板所构成的凹形槽之间，设置一个开设多个平行腐蚀窗口的夹板，和另一个带有鱼眼坑的多个平行的腐蚀窗口的夹板。本发明的优点在于：结构简单，操作方便；使用过程中不需要考虑硅衬底背面金属化问题，制备多孔硅工艺简单；所制得的多孔硅的孔径尺寸大小均匀，孔隙率和多孔硅层厚度均匀。
The invention relates to a double-groove device for preparing porous silicon by electrochemical method, which belongs to the device for preparing porous silicon. The double-slot device includes a tank body, a fixed slot is set in the tank body, a "concave"-shaped substrate is inserted into the fixed slot, and the pressing plate substrate and the backing plate are connected together by screws. Between the concave grooves, a splint with a plurality of parallel corrosion windows and another splint with a plurality of parallel corrosion windows with fish-eye pits are arranged. The invention has the advantages of simple structure and convenient operation; no need to consider the backside metallization of the silicon substrate during use, and the preparation of porous silicon is simple; the prepared porous silicon has uniform pore size, porosity and porous silicon layer Uniform thickness.
Description
Technical field
The present invention relates to a kind of dual bath apparatus of porous silicon preparing electrochemical process, belong to the device for preparing porous silicon.
Background technology
The preparation method of porous silicon mainly contains electrochemical process (anodic corrosion), the corrosion of corrosion spark erosion hydro-thermal etc. at present.Electrochemical process can be divided into double flute electrochemical process and single groove electrochemical process by its device.Its principle is for to allow electric current pass silicon base under the environment of hydrofluoric acid-ethanol etchant solution, and silicon face is corroded gradually selectively near a side of electrode cathode, forms the porous silicon cell texture.
The process of single groove porous silicon preparing electrochemical process is based on the generation of galvanic couple electric current.Plate the layer of metal layer at the back side of silicon substrate as electrode (being generally platinum), place it in the electrolyte solution.The metal level at silicon substrate and its back side contacts in electrolyte solution, because the standard potential of silicon is lower than the current potential of used metal, can produce the galvanic couple electric current between them, the difference of this current potential causes the galvanic couple electric current to flow into silicon substrate, the surface is just shifted in hole in the silicon substrate, with electrolyte solution generation electrochemical reaction, Siliciumatom is dissolved in the solution, thereby silicon chip is carried out galvanic corrosion.Adopt single electrolytic cell assembly to prepare porous silicon, the silicon substrate back side will link to each other with anode, for reducing ohmic contact, must be to a series of processing such as metallize of the silicon substrate back side, this process has not only increased the complicacy of operation, and the thickness of metal film homogeneity is wayward, causes porous silicon aperture size, porosity and porous silicon layer in uneven thickness easily.
Summary of the invention
The dual bath apparatus that the purpose of this invention is to provide a kind of porous silicon preparing electrochemical process.This device realizes that the technological process of preparation porous silicon is simple, and the porous silicon aperture size that makes, porosity and porous silicon layer thickness are even.
The present invention is realized by the following technical programs: a kind of dual bath apparatus of porous silicon preparing electrochemical process: the polypropylene manufacturing that this dual bath apparatus adopts the corrosion of anti-hydrofluoric acid and is easy to mechanical workout forms, it is characterized in that, comprise cell body 1, in cell body, offer fixed slot on the cell wall of length direction and the bottom land, on fixed slot, insert " recessed " shape substrate 2, two ends at the close cell body wall of substrate 2, adopt screw 5 with pressing plate 4, backing plate 3 between substrate 2 and substrate 2 and the pressing plate 4 connects as one, between the Baltimore groove that is constituted by substrate 2 and pressing plate 4 and backing plate 3, the clamping plate 6 of offering at least two parallel corrosion windows on the surface are set, face toward the clamping plate 7 of offering at least two parallel corrosion windows that have the flake hole on the internal surface of clamping plate 6 with being provided with.
Corrosion window on the above-mentioned clamping plate is a rectangle, circle, and trilateral, trapezoidal, interdigitated.
The invention has the advantages that: this device has simple in structure, convenience operation; Adopt this device preparation porous silicon, its process is two and half grooves about silicon chip is divided into whole cell body, replace the silicon substrate back metal with platinum electrode, electric current forms path along platinum electrode-corrosive fluid-silicon chip-corrosive fluid-platinum electrode, therefore prepared porous silicon aperture size size is even, and porosity and porous silicon layer thickness are even.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is an A-A sectional view among Fig. 1.
Structural representation when Fig. 3 is rectangle for the corrosion window of Fig. 1 spare 7.
Structural representation when Fig. 4 is four interdigitated for the corrosion window of Fig. 1 spare 7.
Among the figure: 1 is cell body, and 2 is substrate, and 3 is backing plate, and 4 is pressing plate, and 5 is screw, and 6 for having the clamping plate of corrosion window, and 7 have the clamping plate in flake hole for corrosion window.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail:
It is the thick polypropylene sheet material of 1cm that cell body 1 is selected thickness for use, adopt bonding mode, be of a size of 14cm * 11cm * 10cm by the length and width height and be made as rectangular structure, the upper surface open-ended, inboard at etching tank middle part then (comprising the bottom) offers that 1 road is wide to be the fixed slot of 0.5cm, on fixed slot, insert " recessed " font substrate 2, for increasing stopping property, around substrate, twine with sealed strip, " recessed " font substrate thickness is 0.5cm, width is 10cm, highly is 9.5cm, and removing part in the middle of " recessed " shape is 4cm * 7.5cm rectangle.On two side plates of " recessed " shape substrate pressing plate 4 is set respectively, pressing plate 4 thickness are 0.5cm, and size 2.3cm * 8.5cm is provided with backing plate 3 between substrate 2 and pressing plate 4, and backing plate 3 thickness are 1cm, are of a size of 1.6cm * 8.5cm.At least adopt three screws to connect substrate, backing plate pressing plate, screw 5 spacings are 1.8cm, and radius is 0.4cm, and length is 2.2cm.Between the Baltimore groove of backing plate and pressing plate formation clamping plate 6 and clamping plate 7 are set, clamping plate thickness is 0.5cm, is of a size of 5.4cm * 9cm, for increasing stopping property, seals with sealed strip around two clamping plate.In the present embodiment, on two clamping plate, offer three parallel corrosion windows that are arranged above and below, corrosion window is made up of a rectangle and two semicircles, rectangular dimension is 1.6cm * 0.4cm, the semicircle radius is 0.4cm, offers to be of a size of the flake hole that 2.4cm * 1cm degree of depth is 0.04cm around a corrosion window of clamping plate 7.
It is as follows to adopt above-mentioned dual bath apparatus to prepare the process of porous silicon, will treat that the corrosive silicon chip cuts into the fritter of 2.3cm * 0.9cm size, places it in the flake hole of clamping plate 7.The corrosive fluid of an amount of same concentrations on containing in two and half cell bodies, corrosive fluid is that 40% hydrofluoric acid and 1: 1 by volume proportioning of 95% dehydrated alcohol are formed by massfraction.Two platinum electrodes are inserted respectively in the corrosive fluid of two and half grooves, and making current begins corrosion.If silicon chip is a single-sided polishing, then negative electrode is inserted in polished surface institute to side corrosion end, extracts clamping plate, takes out silicon chip, changes silicon chip, inserts again, continues next group and tests.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN200610129434A CN1974880B (en) | 2006-11-16 | 2006-11-16 | Double-tank device for electrochemical preparation of porous silicon |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610129434A CN1974880B (en) | 2006-11-16 | 2006-11-16 | Double-tank device for electrochemical preparation of porous silicon |
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| Publication Number | Publication Date |
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| CN1974880A CN1974880A (en) | 2007-06-06 |
| CN1974880B true CN1974880B (en) | 2010-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200610129434A Expired - Fee Related CN1974880B (en) | 2006-11-16 | 2006-11-16 | Double-tank device for electrochemical preparation of porous silicon |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111188083A (en) * | 2020-01-23 | 2020-05-22 | 河南理工大学 | Method for electrochemically preparing porous silicon with full-surface luminescence |
| CN111321454A (en) * | 2020-03-05 | 2020-06-23 | 河南理工大学 | A method for preparing light-emitting porous silicon by parallel arrangement |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102115023B (en) * | 2009-12-30 | 2012-10-17 | 中国科学院微电子研究所 | Fixture structure for front protection of wet chemical etching on the back of MEMS chips |
| CN102418138B (en) * | 2011-08-08 | 2014-02-05 | 南京航空航天大学 | Porous silicon preparing device for gross-area device transfer |
| CN102953113A (en) * | 2012-10-19 | 2013-03-06 | 天津大学 | Method for preparing silicon-based nano-scale ordered porous silicon |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412322A (en) * | 2002-11-22 | 2003-04-23 | 华东师范大学 | Preparation method of porous silicon substrate for bearing high integrated level CDMA microarray |
| CN1436878A (en) * | 2003-02-27 | 2003-08-20 | 复旦大学 | Prepn of porous luminescent material |
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2006
- 2006-11-16 CN CN200610129434A patent/CN1974880B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412322A (en) * | 2002-11-22 | 2003-04-23 | 华东师范大学 | Preparation method of porous silicon substrate for bearing high integrated level CDMA microarray |
| CN1436878A (en) * | 2003-02-27 | 2003-08-20 | 复旦大学 | Prepn of porous luminescent material |
Non-Patent Citations (5)
| Title |
|---|
| 吴克跃，黄伟其，许丽.多孔硅的形成和发光.皖西学院学报22 5.2006,22(5),38-41. |
| 吴克跃,黄伟其,许丽.多孔硅的形成和发光.皖西学院学报22 5.2006,22(5),38-41. * |
| 崔梦.应用于MEMS中多孔硅显微结构及绝热性能的研究.天津大学硕士论文.2004,14-16. * |
| 田斌，胡明，张之圣.用电化学方法制备多孔硅.天津大学学报37 9.2004,37(9),823-826. |
| 田斌,胡明,张之圣.用电化学方法制备多孔硅.天津大学学报37 9.2004,37(9),823-826. * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111188083A (en) * | 2020-01-23 | 2020-05-22 | 河南理工大学 | Method for electrochemically preparing porous silicon with full-surface luminescence |
| CN111321454A (en) * | 2020-03-05 | 2020-06-23 | 河南理工大学 | A method for preparing light-emitting porous silicon by parallel arrangement |
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| CN1974880A (en) | 2007-06-06 |
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Granted publication date: 20100512 Termination date: 20101116 |