CN1965405A - Manufacturing method of electronic component seal and electronic component seal - Google Patents

Abstract

The invention provides a manufacturing method of an electronic component seal which can seal in a state of high vacuum by preventing gas from being enclosed inside a vessel, and improve manufacturing efficiency. After forming a non-welding portion by a first welding process step S203 constituted by a first beam irradiating process step (S203a) and a second beam irradiating process step (S203b), in an anneal treating process step (S204), an anneal treatment is performed by irradiating a designated portion on a locus of the electron beam, which has been formed in the first beam irradiating process step (S203a), with the electron beam.

Description

Manufacturing method of electronic component sealing body and electronic component sealing body

technical field

The present invention relates to a method of manufacturing an electronic component sealing body configured by housing electronic components such as a crystal vibrator, a piezoelectric vibrator, and an IC chip in a container, and then airtightly sealing the container with a lid, and an electronic component manufactured by the method sealed body.

Background technique

An electronic component such as a crystal resonator is housed in an airtight state inside a package made of, for example, a container made of ceramics or the like, and a lid sealing the opening of the container, thereby constituting a sealed electronic component.

Seam welding has been conventionally used as a sealing method for electronic component seals. However, since the opening of the container is brazed with an expensive Kovar ring with silver brazing material and then seam-welded to the cover, man-hours and costs are increased. In addition, it is difficult to sufficiently reduce the size of the electronic component sealing body. In addition, there is also a vacuum furnace welding machine that heats the container in a vacuum to melt the sealing material, thereby welding the lid to the container, but this is excellent in cost and productivity. The entire circumference of the welding, so the exhaust gas generated from the sealing material during welding is sealed inside the package, resulting in the problem of deteriorating the vacuum degree. From this point of view, sealing by electron beam welding instead of seam welding or the like has been performed.

FIG. 28 is a plan view for explaining the method of electron beam welding, showing the trajectory of the electron beam 53 irradiated from the lid body 51 side. As shown in FIG. 28 , in electron beam welding, a sealing material 52 such as metal brazing is disposed between the container 50 and a lid 51 disposed on the upper surface of the container 50 to seal the opening of the container. Then, the electron beam 53 is sequentially scanned in a predetermined direction along the periphery of the cover 51 from the side of the cover 51 to perform electron beam irradiation. Here, the electron beam 53 is irradiated so that the start point and end point of beam irradiation coincide at point P. By the irradiation of the electron beam 53, the sealing material 52 is heated and melted, thereby, the container 50 and the cover body 51 are welded by the sealing material 52, and the electronic component sealing body 54 containing the electronic component (not shown) is sealed. .

However, in electron beam welding as described above, gas is generated when the sealing material 52 such as metal solder is melted, and if the gas is enclosed in the electronic component sealing body 54, the characteristics or reliability of the electronic component (not shown) will be affected. sex etc. For example, in the electronic component sealing body 54 configured to accommodate the crystal resonator, the equivalent series resistance value (CI value) of the crystal resonator increases due to gas generated during soldering, and as a result, the oscillation characteristics of the crystal resonator deteriorate. Therefore, in the electron beam welding, it is necessary to discharge the gas generated when the sealing material 52 is melted to the outside, so as to prevent the gas from being trapped inside the electronic element sealing body 54 .

As a method of preventing gas from being enclosed in the electronic component sealing body 54, as shown in FIGS. 29 and 30 , there is a method of irradiating the lid body 51 with the electron beam 53 not all over the periphery of the lid body 51 at one time, but irradiating the lid body several times for a predetermined area. The method around the body 51 (for example, refer to Patent Document 1 to Patent Document 4.). In this method, first, as shown in FIG. 29, a predetermined area is set in advance as a non-irradiation area 55, and in other areas, the electron beam 53 is sequentially scanned in a predetermined direction along the periphery of the lid body 51 to perform Beam irradiation. Here, it is assumed that the non-irradiated region 55 is formed between the point P and the point Q, and the electron beam 53 is irradiated starting from the point P and ending at the point Q.

Since the non-irradiated region 55 is not irradiated with the electron beam 53, the sealing material 52 is not melted and is in an unwelded state. Hereinafter, the unsoldered region formed on the non-irradiated region 55 is referred to as an unsoldered portion 55'. This unwelded portion 55' can be used as a gas discharge port. After the gas is exhausted through the unwelded portion 55', as shown in Fig. 30 , the unwelded portion 55' is irradiated with an electron beam 53 to weld the unwelded portion 55'. In the welding of the unwelded portion 55', the electron beam 53 is scanned in the same direction as in the case of Fig. 29 for welding the other portions to perform beam irradiation. Here, the electron beam 53 is irradiated with the point Q as the starting point and the point P as the end point. According to the above method, sealing of the electronic component sealing body 54 can be performed while suppressing encapsulation of gas into the container 50 .

In addition, since the container 50 made of ceramics adheres to the surface and the like of impurities, moisture, and the like in the air (hereinafter, collectively referred to as volatile components), it is necessary to remove the volatile components. For example, in Patent Document 2, the container 50, the sealing material 52, and the lid body 51 are preheated before electron beam irradiation, and volatile components are removed from each member.

In addition, in Patent Document 3, the gas particles adhering to the container 50 and the lid 51 are effectively removed by heating and drying the electronic component sealing body 54 in the state where the unsoldered portion 55' is formed.

Patent Document 1: JP-A-2000-196162

Patent Document 2: JP-A-2000-223604

Patent Document 3: JP-A-2001-257279

Patent Document 4: JP-A-2002-141427

In order to remove the volatile components adhering to the container 50 or the cover body 51, etc., the method of heating and drying the electronic component sealing body 54 with a heating furnace, etc., needs to arrange the heating furnace adjacent to the electron beam device, resulting in an increase in size of the device. Increased costs. In addition, in this method, after heating and drying the electronic component sealing body 54 with a heating furnace for several hours, a process of cooling the electronic component sealing body 54 or a process of moving it from the heating furnace to a beam device is required. It takes time in the process, so the tact time increases and the manufacturing efficiency decreases.

However, in the electron beam welding in which the gas is exhausted after the formation of the unwelded portion 55' as described above, it is difficult to stop the electron beam 53 instantaneously at the point Q which becomes one end of the unwelded portion 55'. Therefore, it is necessary to terminate the unwelded portion 55' at the point Q by increasing the moving speed of the beam while keeping the irradiation output constant. Therefore, in the stop operation at the point Q of the electron beam 53 when the unwelded portion 55' is formed shown in FIG. In the region of point P, the electron beam 53 is slightly irradiated, thereby possibly melting the sealing member 52 in the unwelded portion 55' (that is, the region between point P and point Q), which is not intended to be melted. In addition, even if the electron beam 53 is stopped, the sealing material 52 of the unwelded portion 55' may melt due to the influence of residual heat of the beam.

As a result, the sealing material 52 of the unwelded portion 55' is also melted together, and it is difficult to form the unwelded portion 55' with high precision as designed. Here, especially in order to suppress the encapsulation of gas in the electronic component sealing body 54 as much as possible, it is preferable to reduce the width W of the unsoldered portion 55 ′. Therefore, it is necessary to accurately control the points P and Q that become the ends of the unsoldered portion 55 ′. Location. Therefore, as described above, if the electron beam 53 cannot be accurately stopped at the point Q, it will be difficult to control the width W of the unwelded portion 55 ′, so that the encapsulation of gas in the electronic component sealing body 54 cannot be sufficiently prevented, which may cause The characteristics and the like of electronic components (not shown) in the electronic component sealing body 54 deteriorate.

Contents of the invention

In order to solve the above-mentioned problems in the prior art, the present invention aims to provide a method of manufacturing an electronic component sealing body capable of preventing gas from being enclosed in the container and sealing it in a high vacuum state, and improving manufacturing efficiency, and using the manufacturing method. Manufactured electronic component seals.

In order to solve the above-mentioned problems and achieve the purpose, the method of manufacturing the electronic component sealing body of the present invention is characterized in that at least comprising: a container (hereinafter referred to as " The process of arranging the lid around the periphery of the opening of the container") via a sealing material that joins the container and the lid covering the opening of the container (hereinafter referred to as "lid"); an annealing process of at least one beam irradiation of the container and the lid; and a step of fusing the sealing material to join the container and the lid.

According to the above configuration, the gas derived from the volatile components adhering to the container, the lid, or the like can be efficiently exhausted from the communication portion through the annealing treatment step. Thereby, a favorable degree of vacuum can be realized in the electronic component sealing body, and as a result, the characteristics and reliability of the electronic component inside the electronic component sealing body can be improved. In particular, according to the above configuration, since the beam is directly irradiated to the container or the cover constituting the sealed electronic component in the annealing process, the sealed electronic component can be heated at a high temperature efficiently. time for annealing.

In addition, in the above annealing treatment step, after the beam irradiation is stopped, the electronic component sealing body can be cooled in a short time. Therefore, it is not necessary to separately provide a cooling step and take time. In addition, since the annealing treatment is performed by beam irradiation here, the annealing treatment process and the communication portion beam welding process can be continuously performed in the same processing chamber maintained in a vacuum state. Therefore, a configuration for annealing treatment, such as a processing chamber for annealing treatment, and the like are not required, and transportation of the electronic component sealed body between two steps is unnecessary. Therefore, it is possible to reduce the cost of the device and improve the manufacturing efficiency of the electronic component sealing body. In particular, if the annealing process and the connecting portion beam welding process are performed with the same beam, the above-mentioned effects are more effective.

In addition, in the method for manufacturing a sealed electronic component according to the present invention, in the above invention, in the annealing step, the beam is irradiated to one or more places on the bottom wall of the container. In addition, the method for manufacturing a sealed electronic component according to the present invention is characterized in that, in the annealing step, the beam is irradiated to one or more places on one side wall of the container in the above invention. In addition, in the method for manufacturing a sealed electronic component according to the present invention, in the above invention, in the annealing step, the beam is irradiated to one or more of the plurality of side walls of the container. .

According to the above configuration, heating can be efficiently performed in the annealing treatment step. In particular, when the beam is irradiated to a plurality of places on the bottom wall and the side wall of the container, and when the beam is irradiated to a plurality of side walls, the heating efficiency can be further improved.

In addition, the method for manufacturing a sealed electronic component according to the present invention is characterized in that, in the annealing step, the beam is irradiated intermittently a plurality of times in the above invention. According to the said structure, the damage (damage) to an electronic element sealing body by the heat generate|occur|produced at the time of beam irradiation in an annealing process can be reduced. Therefore, a high-quality electronic component sealing body can be obtained.

Moreover, the manufacturing method of the electronic component sealing body of this invention is characterized by irradiating laser light as the said beam current in the said annealing process in the said invention. According to the said structure, the damage (damage) to an electronic element sealing body by the heat generate|occur|produced at the time of beam irradiation in an annealing process can be reduced. Therefore, a high-quality electronic component sealing body can be obtained.

In addition, in the method for manufacturing a sealed electronic component according to the present invention, in the above invention, before the annealing step, at least a part of the communicating portion between the housing portion and the outside of the container remains, The sealing material is melted to join the container and the lid, and the communicating portion is sealed after the annealing process.

In addition, the method of manufacturing an electronic component sealing body according to the present invention is characterized in that, before or after the annealing step, the container has a through-hole in advance as the communication portion, and the connection to the In the through-hole sealing material filling step of filling the through-hole sealing material, the through-hole sealing material is irradiated with a beam, and the through-hole is filled and sealed with the molten through-hole sealing material.

In addition, the method for manufacturing a sealed electronic component according to the present invention, in the above invention, is characterized in that the through-hole is provided on the bottom wall of the container, and an external connection is arranged on the bottom wall of the container. In the annealing step, the beam is irradiated to a region of the bottom wall other than a region where the through-hole is formed and a region where the external connection electrode is arranged.

According to the above structure, the gas etc. generated in the annealing process can be exhausted through the through-hole of a container. Thereby, a favorable degree of vacuum can be realized in the electronic component sealing body, and as a result, the characteristics and reliability of the electronic component inside the electronic component sealing body can be improved.

In addition, the method of manufacturing a sealed electronic component of the present invention is characterized in that, in the method of manufacturing a sealed electronic component, at least a container ( Around the opening of the container (hereinafter referred to as "container"), the lid is arranged via a sealing material that joins the container and the lid covering the opening of the container (hereinafter referred to as "lid") The step of: a welding step of irradiating the first beam except for a predetermined partial region at the joint portion of the container and the lid joined by the sealing material, and melting all the regions except the partial region The above-mentioned sealing material is used to weld and seal the container and the cover body, and to form the connecting part between the receiving part and the outside of the container in this part area, that is, the unwelded part; the unsealed electronic component sealing body in the state of the unsoldered portion formed by the first welding step, irradiating a second beam to at least one of the container and the lid; and a second welding step in which After a predetermined time for exhausting gas in the container from the unwelded portion, the unwelded portion is irradiated with the third beam to weld and seal the unwelded portion.

According to the above configuration, the annealing process can efficiently discharge the gas originating from the volatile components adhering to the container or the gas generated in the primary welding process from the unwelded portion. Thereby, a favorable degree of vacuum can be realized in the electronic component sealing body, and as a result, the characteristics and reliability of the electronic component inside the electronic component sealing body can be improved.

In addition, in the method for manufacturing a sealed electronic component according to the present invention, in the above invention, the annealing step uses the same beam as the first beam used in the primary soldering step as the first beam. The second beam is irradiated to one or more places on the irradiation track of the first beam in the one welding process in the manner of irradiating to trace the track of the first beam. According to the above configuration, the trajectory of the beam formed in the annealing process coincides with the trajectory of the beam formed in the single welding process. Therefore, in the completed sealed electronic component body, a good appearance can be realized.

In addition, in the method for manufacturing a sealed electronic component according to the present invention, in the above invention, at least the first beam and the second beam are electron beams or laser light. According to the above configuration, since the electron beam can be irradiated in the processing chamber in a vacuum state, and the welding step and the annealing step can be continuously performed once, the gas can be quickly discharged from the inside of the electronic component sealing body to the processing chamber. In addition, since the annealing process and the one-time soldering process can be performed using the same electron beam processing device, the cost of the device can be reduced, and the manufacturing efficiency of the electronic component sealing body can be improved.

In addition, in the method for manufacturing a sealed electronic component according to the present invention, in the above invention, it is characterized in that the output value of the second beam used in the annealing step is lower than that in the primary soldering step. The output value of the first beam is used. According to the said structure, the damage (damage) to an electronic element sealing body by the heat generate|occur|produced at the time of beam irradiation in an annealing process can be reduced. Therefore, a high-quality electronic component sealing body can be obtained. In addition, in the annealing process, melting of the sealing material can be prevented, and unintended solder sealing can be prevented.

In addition, the manufacturing method of the electronic component sealing body of the present invention is characterized in that in the above-mentioned invention, the irradiation of the first beam is divided into two or more times in the one-time soldering step, and The unwelded portion is formed between the starting point during the irradiation and the starting point during the second beam irradiation, with the two starting points as both ends.

As a specific example, in the above-mentioned invention, the manufacturing method of the electronic component sealing body of the present invention is characterized in that the first welding process includes: the first beam irradiation process, so as to become one end of the unwelded part The first point is the starting point, and the first beam is sequentially scanned in a predetermined direction along the outer circumference of the cover so as to be located upstream in the beam scanning direction from the second point that becomes the other end of the unwelded portion. The third point on the side is the end point, irradiating the first beam, welding and sealing from the first point to the third point; and a second beam irradiation process to become the other end of the unwelded part The second point is the starting point, and the first beam is sequentially scanned along the outer circumference of the cover in a direction opposite to the specified direction, and at least the first beam is irradiated to serve as the first A third point at the end of the sub-beam irradiation process is welded and sealed from the second point to the third point to form the unwelded portion.

According to the above configuration, since the unwelded portion can be formed with both ends of the beam irradiation start point, it is possible to precisely place the desired position and the desired width, compared with the conventional case where the end portion is formed by the electron beam irradiation end point. Form the unsoldered part. Therefore, the degree of vacuum inside the sealed electronic component can be further increased, and as a result, the characteristics and reliability of the electronic component inside the sealed electronic component can be further improved.

In addition, the method for manufacturing a sealed electronic component according to the present invention is characterized in that, in the above invention, the container has a quadrangular shape, and the four corners of the container are included in the The position of the first point, the second point and the third point is set between the first point and the third point or included between the second point and the third point . According to the above configuration, since the airtight sealing property of the region other than the unwelded portion is improved, the high-quality product rate can be improved.

In addition, the manufacturing method of the electronic component sealing body of the present invention, in the above invention, is characterized in that, before the first welding step, it further includes the step of spot-fixing the lid on the container, In the first and second beam irradiation steps of the first welding step, the first beam irradiation starting point is arranged in a region other than the spot-fixed portion of the lid and the container. The first point and the second point. According to the above configuration, since it is possible to prevent displacement of the lid disposed on the container and to perform beam irradiation, yield and production efficiency can be improved.

In addition, the method for manufacturing a sealed electronic component according to the present invention is characterized in that, in the secondary soldering step, an electron beam or a laser beam is irradiated as the third beam to perform the above-mentioned soldering process. Welded seal. According to the above configuration, although gas is generated in the container by irradiation of electron beams or lasers during welding and sealing, the gas can be exhausted from the unwelded portion, and welding and sealing can be performed while maintaining a high vacuum state. Here, in the irradiation of electron beam or laser, it is difficult to control the end point of beam irradiation, but according to the present invention, since both ends of the unwelded portion are constituted by the starting point of beam irradiation as described above, it is possible to easily The width and the desired position are formed with high precision to form the unwelded part, so that it is possible to maintain a better high vacuum state and perform welding sealing at the same time. In particular, if a laser is used in the secondary welding process, spot sealing of the unwelded portion can be performed by locally irradiating the narrow unwelded portion with laser light.

In addition, the method for manufacturing a sealed electronic component according to the present invention is characterized in that, in the above invention, the first beam or the The welding and sealing of the irradiation of the third beam includes: a preheating beam irradiation process, which is used as a preheating process to irradiate the container, the heating the cover and the sealing material to a predetermined temperature; and a welding beam irradiation step of melting the sealing material by irradiation of the first beam or the third beam, and passing through the sealing material The container and the lid are welded. In addition, in the method for manufacturing a sealed electronic component according to the present invention, in the above invention, in the step of irradiating the preheating beam, the welding region is irradiated with the first beam or the third beam a plurality of times. Beam. According to the above configuration, welding sealing can be reliably performed at desired portions along the periphery of the lid.

In addition, the method of manufacturing a sealed electronic component according to the present invention is characterized in that the sealing material is placed on the container in advance in the above invention. According to the above configuration, when irradiating the beam, it is not necessary to fix the container and the lid with a conventional jig.

Moreover, the manufacturing method of the electronic component sealing body of this invention is characterized in that the said electronic component is a crystal resonator in the said invention. According to the above configuration, since the inside of the electronic component sealing body is maintained in a high vacuum state, the equivalent series resistance value (CI value) of the crystal resonator can be reduced. Therefore, it is possible to realize a sealed electronic device including a crystal resonator having constant quality and stable oscillation characteristics.

Moreover, the electronic component sealing body of this invention is manufactured by the manufacturing method of the electronic component sealing body of the said invention, It is characterized by the above-mentioned. In the sealed electronic component having the above configuration, since the inside of the container is kept in a high vacuum state, good device characteristics and stable high reliability can be realized.

According to the manufacturing method of the electronic component sealing body and the electronic component sealing body of the present invention, it is possible to prevent the gas generated from the sealing material during soldering, or the impurities or moisture in the atmosphere adhering to the container or cover of the electronic component sealing body ( That is, volatile components) remain in the sealing body, so the inside of the electronic component sealing body can be made into a high vacuum state. Therefore, the electronic components housed inside are not aged by gas generated during soldering or gases derived from volatile components, thereby preventing degradation of the characteristics and reliability of the electronic components.

In addition, since the container or lid can be annealed with the same beam as that used in the welding process, the welding device can be used directly as a conventional heating furnace. That is, a heater device and a transfer tray for heating the entire container or lid for a long time, and a water cooling device and transfer tray for cooling the entire heated portion afterwards are unnecessary. Therefore, it is possible to reduce the device cost, simplify the manufacturing process, and shorten the lead time. Therefore, it is possible to efficiently manufacture a highly reliable electronic component sealed body having favorable characteristics.

Description of drawings

FIG. 1 is a flowchart showing each step in the method of manufacturing a package according to Embodiment 1 of the present invention.

FIG. 2 is a schematic cross-sectional view of a package manufactured by the manufacturing method of FIG. 1 .

3 is a schematic plan view for explaining a laser irradiation method in an annealing step of the manufacturing method shown in FIG. 1 .

4 is a schematic plan view illustrating another example of a laser irradiation method in an annealing step of the manufacturing method shown in FIG. 1 .

5 is a schematic plan view for explaining a laser irradiation method in a welding step of the manufacturing method shown in FIG. 1 .

6 is a bottom plan view of a container used in the method of manufacturing a package according to Embodiment 2 of the present invention.

7 is a schematic cross-sectional view illustrating a soldering step in the method of manufacturing a package according to Embodiment 2 of the present invention.

8 is a schematic cross-sectional view illustrating a soldering step in the method of manufacturing a package according to Embodiment 2 of the present invention.

9 is a schematic cross-sectional view illustrating a soldering step in the method of manufacturing a package according to Embodiment 2 of the present invention.

10 is a flow chart showing each step in the method of manufacturing a package according to Embodiment 3 of the present invention.

FIG. 11 is a schematic plan view for explaining an electron beam irradiation method in one welding step of the manufacturing method shown in FIG. 10 .

FIG. 12 is a schematic plan view for explaining an electron beam irradiation method in one welding step of the manufacturing method shown in FIG. 10 .

13 is a schematic plan view for explaining an electron beam irradiation method in an annealing step of the manufacturing method shown in FIG. 10 .

14 is a schematic plan view for explaining a method of irradiating electron beams in a secondary soldering step of the manufacturing method of FIG. 10 .

FIG. 15 is a schematic plan view illustrating a method of simultaneously manufacturing a plurality of packages using the manufacturing method of FIG. 10 .

FIG. 16 is a schematic plan view illustrating a method of simultaneously manufacturing a plurality of packages using the manufacturing method of FIG. 10 .

FIG. 17 is a schematic plan view illustrating a method of simultaneously manufacturing a plurality of packages using the manufacturing method of FIG. 10 .

FIG. 18 is a schematic plan view illustrating a method of simultaneously manufacturing a plurality of packages using the manufacturing method of FIG. 10 .

19 is a schematic plan view for explaining an electron beam irradiation method in the package manufacturing method according to Embodiment 4 of the present invention.

20 is a schematic plan view for explaining an electron beam irradiation method in the package manufacturing method according to Embodiment 5 of the present invention.

21 is a schematic plan view for explaining an electron beam irradiation method in a method of manufacturing a package according to Embodiment 6 of the present invention.

22 is a schematic plan view for explaining a method of irradiating electron beams in a single soldering step of the method of manufacturing a package according to Embodiment 7 of the present invention.

23 is a schematic plan view for explaining an electron beam irradiation method in a single soldering step of the package manufacturing method according to Embodiment 7 of the present invention.

24 is a schematic plan view illustrating an electron beam irradiation method in a third electron beam irradiation step of the package manufacturing method according to Embodiment 7 of the present invention.

25 is a schematic plan view for explaining an electron beam irradiation method in a secondary soldering step of the package manufacturing method according to Embodiment 7 of the present invention.

26 is a flow chart showing each step of the method of manufacturing a package according to Embodiment 8 of the present invention.

FIG. 27 is a graph showing the results of Examples and Comparative Examples.

FIG. 28 is a schematic plan view showing an example of a conventional method of manufacturing a package.

FIG. 29 is a schematic plan view showing another example of a conventional method of manufacturing a package.

FIG. 30 is a schematic plan view showing still another example of a conventional method of manufacturing a package.

In the figure: 1-crystal vibrator, 2-container, 3-cover body, 4-sealing material, 5-support platform, 6-bonding material, 10A, 10B, 10C, 10D-electron beam, 15-unwelded part, 20 - package body, 500 - through hole, 600 - through hole sealing material.

Detailed ways

Hereinafter, preferred embodiment of the manufacturing method of the electronic component sealing body of this invention, and the electronic component sealing body manufactured by this manufacturing method is demonstrated in detail, referring drawings. Here, as an electronic component sealing body, a crystal resonator device in which a crystal resonator device as an electronic component is accommodated and sealed in a container is exemplified, and an electronic component sealing body in which a crystal resonator is surface-mounted is particularly described. In addition, in the following, the crystal oscillator sealing body is simply referred to as a package.

(Embodiment 1)

FIG. 1 is a flowchart showing each step in the method of manufacturing a package according to Embodiment 1 of the present invention. In addition, FIG. 2 is a schematic cross-sectional view of a package manufactured by the manufacturing method of FIG. 1 . 3 to 5 are schematic plan views for explaining each step in the manufacturing method of FIG. 1 . Specifically, FIGS. 3 and 4 show the irradiation method of the laser beam in the annealing process of FIG. 1 , and FIG. 5 shows the trajectory of the laser beam in the welding process of FIG. 1 . Electron beams, ion beams, lasers (solid-state lasers, gas lasers, semiconductor lasers), and microwaves can be used as beam currents, but electron beams and semiconductor lasers are particularly easy to use. In this embodiment, a case where laser light is used will be described.

As shown in FIG. 1 , in the manufacturing method of the package according to this embodiment, first, the crystal resonator 1 is housed in the container 2 shown in FIG. 2 (step S101 ). As shown in FIG. 2 , the container 2 is composed of a bottom wall and side walls arranged along the outer periphery of the bottom wall, and has a rectangular box shape with an open top. Examples of the constituent material of the container 2 include ceramics, metal, resin, and the like, but the container 2 is made of ceramics here. In addition, the dimension of the container 2 here is 4.1 mm in the long side, 1.5 mm in the short side, and 0.7 mm in height. A support stand 5 is arranged on the bottom surface of the container 2 , and a crystal plate as the crystal resonator 1 is arranged on the support stand 5 parallel to the bottom surface of the container 2 via the bonding material 6 . Thus, a structure in which crystal resonator 1 is accommodated in container 2 is realized.

Here, as the crystal resonator 1 , a U-shaped tuning-fork crystal resonator is used. In this case, a U-shaped standing portion is arranged along the long side of the container 2 .

After the crystal resonator 1 is arranged and housed in the container 2 as described above, the lid body 3 is arranged on the side wall surface of the container 2 via the sealing material 4 so as to seal the opening of the container 2 . Then, the rolling plate electrode (not shown) of the resistance welding machine is pushed from the side of the cover 3 to the central parts of the two short sides of the cover 3, whereby the cover 3 is resistance-welded at the two central parts of the short sides. Spot welding (spot welding) is performed on the container 2 (step S102 in FIG. 1 ). Here, the roller electrode of this resistance welding machine corresponds to a metal external connection electrode. In addition, here, the short-side central portion of the lid body 3 is spot-fixed, but it is also possible to press and spot-fix portions other than the short-side central portion.

As shown in FIG. 2 , the lid body 3 has a shape whose outer periphery substantially coincides with the outer periphery of the container 2 in plan view. The lid body 3 is made of metal, in this case, an iron-based alloy (Kovar). The sealing material 4 sandwiched between the container 2 and the lid body 3 is made of brazing filler metal, and a brazing filler metal made of gold-tin alloy, silver alloy, aluminum alloy, etc. is used here. Furthermore, the sealing material 4 is placed on the side wall surface of the container 2 in advance.

In addition, although not shown in FIG. 2 , a metallized layer made of tungsten is provided on the upper surface of the side wall of the container 2 , and a nickel-plated layer and a gold-plated layer are further provided on the metallized layer. Furthermore, the sealing material 4 is provided on this gold-plated layer beforehand. By arranging the sealing material 4 on the side wall of the container 2 in advance in this way, it is only necessary to weld the lid body 3 and the sealing material 4 during laser irradiation in the welding process (step S105 of FIG. 1 ) described later. The body 3 is easily welded to the sealing material 4 . In addition, the sealing material 4 may be arranged on the lid body 3 side in advance.

After the lid body 3 is point-fixed to the container 2 in this way, a predetermined region of the container 2 is irradiated with laser light. Thus, the package 20 composed of the container 2 and the lid 3 is heated and dried, and volatile components such as impurities in the air and moisture adhering to the lid 3, the container 2, or the sealing material 4 are removed. Here, the degassing treatment of non-volatile components by such heating is referred to as annealing treatment (annealing treatment step S103 in FIG. 1 ). The irradiation area of the laser beam in step S103 of the annealing treatment process is not particularly limited, but if the laser beam is irradiated to the lid body 3 made of metal or to a metal external connection electrode (not shown) provided in the container 2, a beam current will be caused. reflection, the heating efficiency decreases. Therefore, in the package 20 , it is preferable to irradiate laser light 10 to a region excluding the lid 3 and the external connection electrodes of the container 2 , specifically, to a predetermined region of the ceramic container 2 .

For example, as shown in FIG. 3 , the annealing treatment may be performed by irradiating the outer surface of the bottom wall of the container 2 with laser light 10 . In this case, the laser beam 10 may be irradiated to a predetermined area outside the bottom wall of the container 2 in a spot pattern, or beam irradiation may be performed by scanning the laser beam 10 on a predetermined area outside the bottom wall. Such irradiation of the laser beam 10 may be performed once, or may be performed intermittently a plurality of times. Specifically, the same area outside the bottom wall of the container 2 may be irradiated intermittently with the laser 10 multiple times, and multiple areas at different positions may be irradiated intermittently with the laser 10 one or more times.

In addition, as shown in FIG. 4 , the annealing treatment may be performed by irradiating the outer surface of the side wall of the container 2 with laser light 10 . In this case, the laser beam 10 may be irradiated in a spot pattern on a predetermined area outside the side surface of the container 2, or beam irradiation may be performed by scanning the laser beam 10 on a predetermined area outside the side wall. For example, on the outside of one side wall of the container 2, as in the case of irradiating the above-mentioned bottom wall, the same area can be intermittently irradiated with laser light 10 one or more times. Each of the regions is intermittently irradiated with the laser light 10 one or more times. Alternatively, such irradiation of the laser light 10 may be performed for each side wall on the surface of a plurality of side walls of the container 2 .

Here, if the laser beam 10 is irradiated multiple times intermittently, damage to the package 20 (specifically, the container 2 irradiated with the laser beam 10 ) can be reduced. In addition, if the laser beam 10 is irradiated to a plurality of different regions, the heating efficiency of the package 20 can be improved.

The output value of the laser beam 10 may be the same as or lower than the output value of the laser beam 10 (see FIG. 5 ) in the welding step S105 of FIG. 1 described later. Here, the output value of the laser beam 10 is set lower than the output value of the laser beam 10 in welding process step S105. Specifically, the output value lower than the output value of the laser beam 10 in the welding step S105 refers to a beam current output value at which the sealing material 4 hardly melts.

In addition, the irradiation conditions of the laser beam 10 in step S103 (refer to FIG. 1 ) of the annealing treatment process, such as the beam irradiation time, the number of beam irradiation places, or the beam scanning distance, etc., are appropriately set according to the conditions that can effectively realize the annealing treatment. Specifically, it is appropriately set according to the size of the package 20, the material of the container 2, and the like.

Step S103 of such an annealing treatment process is performed using a conventional laser processing apparatus, and processing is performed by irradiating the container 2 with laser light 10 in a processing chamber maintained in a vacuum state. For example, in the laser processing apparatus, by appropriately moving the irradiation head of the movable laser 10 , the laser beam 10 can be irradiated to a desired position of the container 2 .

The gas originating from the volatile components generated by the annealing treatment is discharged from the inside of the package 20 into the processing chamber by leaving the package 20 in the processing chamber for a predetermined time after the irradiation of the laser beam 10 shown in FIG. 3 or FIG. 4 ( Step S104 of FIG. 1). Here, since the processing chamber maintains a vacuum state, it is possible to efficiently exhaust gas. Accordingly, it is possible to maintain a high vacuum state inside the package 20 .

Here, as shown in FIG. 2, between the container 2 and the lid body 3 arranged via the sealing material 4, the spot welding portion spot-bonded in step S102 of FIG. A communicating portion that communicates between the space inside the container 2 (that is, the housing portion) and the outside of the container 2 (specifically, the processing chamber). Therefore, the gas derived from the volatile components removed by the annealing treatment can be discharged to the outside of the package 20 (that is, the processing chamber) through the communicating portion.

After the gas is discharged in step S104 of FIG. 1, as shown in FIG. Irradiate to completely seal the package body 20 (soldering process step S105 in FIG. 1 ). Here, the entire periphery of the cover body 3 is scanned at a time so that the start point and end point of beam irradiation coincide at point P. The sealing material 4 shown in FIG. 2 is heated and melted by such irradiation of the laser beam 10 , thereby welding the communication portion between the container 2 and the lid body 3 with the sealing material 4 to seal the package 20 . Therefore, here, the welding process step S105 corresponds to the communication part beam welding process. In addition, here, in the welding process step S105, the laser beam 10 is scanned in the same direction as the clockwise direction, but the laser beam 10 may be scanned in the direction opposite to the clockwise direction. In addition, the position of the point P which becomes the start point and the end point of beam irradiation may be other than the position of FIG. 5. FIG.

As described above, according to the manufacturing method of the package of this embodiment, since the annealing treatment in the annealing treatment step S103 is performed using the same laser beam 10 as that in the welding step S105, the annealing can be performed in the same processing chamber using the same laser processing device. Each processing in the processing step S103, the gas discharge step S104, and the welding step S105. Therefore, there is no need to provide an additional structure for annealing treatment (for example, a front chamber or a back chamber of a sealing processing chamber, which was conventionally necessary), and thus, the device cost can be reduced. In addition, since the steps of step S103 to step S105 can be continuously performed in the same processing chamber, it is not necessary to transport the package 20 between the steps or the like. Therefore, it is possible to efficiently discharge the gas while improving the manufacturing efficiency of the package 20 .

In addition, during the annealing process using the laser 10, the temperature of the beam irradiated portion and its vicinity rises rapidly locally, and then when the beam irradiation is stopped, the temperature of these portions drops rapidly. Therefore, compared with the conventional case where the entire package 20 is heated by a heating plate or a heater lamp for annealing, the package 20 can be efficiently heated to a high temperature and cooled efficiently, so that an additional cooling step is not required. Therefore, also from this point of view, the manufacturing efficiency of the package 20 can be improved.

However, generally, when manufacturing the package 20 , a series of manufacturing steps are performed in a batch to manufacture the package 20 , and each process is performed on a plurality of packages 20 in a batch, and a plurality of packages 20 are simultaneously manufactured. Specifically, here, in the processing chamber of the laser processing apparatus, a plurality of packages 20 are arranged in multiple columns and multiple rows at predetermined intervals. Furthermore, in step S103 of the annealing process, each package 20 is sequentially irradiated with the laser beam 10 shown in FIG. 3 or FIG. The sealing of the package 20 is performed by irradiating the laser beam 10 shown in FIG. 5 at a time.

In step S103 of the annealing treatment process of sequentially irradiating the beams to the plurality of packages 20 , the packages 20 heated and annealed by the beam irradiation are exhausted during the treatment of the other packages 20 . was cooled. Therefore, the gas can be naturally and efficiently discharged without additionally providing the gas discharge step S104. In addition, cooling can be naturally and efficiently performed without separately installing a cooling step.

In addition, in the above, in the annealing process step S103 and the welding process step S105, the case where each process is performed by irradiating the laser beam 10 has been described, but in these process steps S103 and S105, instead of the laser beam 10, it is also possible to Electron beams are used for each treatment. For example, in the case of annealing with electron beams, since laser light 10 is not reflected by metal, either the lid body 3 or the container 2 can be irradiated. However, since the container 2 is damaged by the heat generated when the container 2 is irradiated with electron beams, the output value can be appropriately lowered taking this into consideration.

Here, when the electron beam is used in the annealing process step S103, compared with the case of using the laser 10, since the damage (damage) of the electron beam to the package 20 is large, considering the influence on the package 20, Perform beam irradiation with an appropriate output. In addition, for example, if a predetermined region of the container 2 is irradiated with electron beams in a spot pattern, damage to the region will increase. Therefore, in the case of using an electron beam, it is preferable to perform beam irradiation by scanning the beam. In addition, if the beam irradiation is performed by scanning the electron beam, since the irradiation trajectory of the electron beam will affect the appearance of the package, etc., it is preferable to make the trajectory of the irradiated laser light 10 and the trajectory of the electron beam in the welding process S105 Consistently scan.

(Embodiment 2)

6 to 9 are diagrams for explaining the method of manufacturing the package according to Embodiment 2 of the present invention. Specifically, FIG. 6 is a plan view of the container used in the package of the present embodiment viewed from the bottom, and FIGS. 7 to 9 are schematic cross-sectional views showing a soldering step in the method of manufacturing the package of the present embodiment.

The manufacturing method of the package of the present embodiment is the same as the case of the first embodiment, including the processing steps S101 to S105 shown in the flowchart of FIG. 1, and is a manufacturing method of the package 20 of FIG. This aspect is different from Embodiment 1.

As shown in FIG. 6 , in the package 20 of the present embodiment, at the bottom of the container 2 , there is a device for communicating the inside of the package 20 (that is, the housing portion of the crystal vibrator 1 of the container 2 ) with the outside of the package 20 . The through hole 500. Therefore, here, the through-hole 500 corresponds to a communicating portion.

As shown in FIG. 7 , the bottom of the container 2 is formed by stacking double-sided bottom plates 601 and 602, and circular through-holes 603 are respectively provided on the first bottom plate 601 disposed on the outside and the second bottom plate 602 disposed on the inside. , 604.

When the through-hole 603 of the first bottom plate 601 and the through-hole 604 of the second bottom plate 602 are stacked to form the bottom surface of the container 2, a part of the hole is arranged to overlap in a planar view. Here, the through hole 500 is formed by combining the two through holes 603 and 604 . In this through-hole 500 , the first bottom plate 601 and the second bottom plate 602 respectively protrude from portions where the through-holes 603 and 604 do not overlap each other in the hole, thereby forming the through-hole 500 in which the hole is stepped.

Next, a method of manufacturing the package of this embodiment will be described. First, in the present embodiment, the processes of step S101 and step S102 in FIG. 1 are performed similarly to the case of the first embodiment. Then, the package 20 is arranged in a laser processing device, and within a processing chamber maintained in a vacuum state, the laser beam 10 is irradiated from the cover 3 side of the package 20 as shown in FIG. The laser light 10 is scanned all around the periphery of the body 3 . As a result, the sealing material 4 (see FIG. 2 ) is melted all over the periphery of the lid body 3, and the lid body 3 and the container 2 are completely welded. In addition, here, the lid body 3 and the container 2 are welded by using a laser 10, but the welding method is not limited to laser irradiation. Welding can be performed by electron beam irradiation which is easy to scan.

In such welding of the container 2 and the lid body 3, for example, a gas such as a volatile component originating from the sealing material 4 or a volatile component adhering to the package body 20 is generated, but here, the gas passes through the The through-hole 500 at the bottom discharges from the inside of the package 20 to the outside (here, the processing chamber in a vacuum state).

After the container 2 and the lid body 3 have been welded as described above, an annealing treatment is performed in the annealing treatment step S103 of FIG. 1 by the method described in the first embodiment. As a result, the volatile components adhering to the package 20 are volatilized to generate gas as described above. Here, by leaving the package 20 in the processing chamber for a predetermined period of time, the gas originating from the volatile component is discharged from the inside of the package 20 to the outside (that is, the processing chamber) through the through-hole 500 in the processing chamber (Fig. Step S104).

Here, in step S103 of the annealing process, when irradiating the outer surface of the bottom wall of container 2 with laser 10 as shown in FIG.

Then, as shown in FIG. 7 , it is necessary to close the through-hole 500 at the bottom of the container 2 , and to fill (dispose) the through-hole sealing material 600 into the through-hole 500 . Here, a substantially spherical through-hole sealing member 600 is arranged in the through-hole 603 of the first bottom plate 601 in contact with the surface of the second bottom plate 602 . Such a step of disposing the through-hole sealing material 600 is referred to as a through-hole sealing material filling step. This through-hole sealing material filling process is performed in the processing chamber of the laser processing apparatus which maintains a vacuum state.

In the above, the case where the through hole sealing material filling step is performed after the annealing step S103 in FIG. 1 is exemplified, but the through hole sealing material filling step may be performed before the annealing step S103. At this time, the above-mentioned gas generated in step S103 of the annealing process needs to be discharged to the outside through the through hole 500 filled with the through hole sealing material 600 . Therefore, gas can be discharged through the gap.

After the through-hole sealing material filling process described above, beam welding of the through-hole 500 is performed to completely seal the package 20 in FIG. 2 (soldering process step S105 in FIG. 1 ). Specifically, as shown in FIG. 8 , the through-hole sealing material 600 loaded in the through-hole 500 is selectively irradiated with laser light 10 to melt the through-hole sealing material 600 . As a result, as shown in FIG. 9 , the molten through-hole sealing material 600 is filled into the through-hole 500 to block the through-hole 500 , thereby achieving complete sealing of the package 20 .

Therefore, in the present embodiment, step S105 of the welding process of the through hole 500 corresponds to the beam welding process of the communicating portion. In the manufacturing method of the package of the present embodiment having the above-mentioned configuration, similarly to Embodiment 1, the annealing treatment is performed by irradiation of the laser beam 10 shown in FIG. 3 or FIG. Gases of volatile components produced. Therefore, the same effects as those described in Embodiment 1 can be obtained.

In addition, in the above, the case where the welding of the container 2 and the lid body 3 shown in FIG. 5 and the beam welding of the through hole 500 shown in FIG. , using electron beams for these welds.

(Embodiment 3)

10 is a flow chart showing each step in the method of manufacturing a package according to Embodiment 3 of the present invention. 11 to 14 are schematic plan views for explaining the electron beam irradiation method in each step of the manufacturing method of FIG. 10 , showing the trajectory of the electron beam irradiated to the package from the lid side. Specifically, FIG. 11 and FIG. 12 show the trajectory of the electron beam in the primary welding process step S203 of FIG. 10, FIG. 13 shows the trajectory of the electron beam in the annealing process step S204 of FIG. 10, and FIG. The trajectory of the electron beam in step S206 of the secondary welding process.

In the package manufacturing method of the present embodiment, as shown in FIG. 10 , first, the crystal resonator 1 is housed in the container 2 shown in FIG. 2 (step S201 ). Then, spot-fixing of the lid body 3 and the container 2 is performed by the method described in step S102 of FIG. 1 in Embodiment 1 (step S202). After the cover body 3 is fixed on the container 2 in this way, as shown in FIGS. The beam is irradiated, and the sealing material 4 in the irradiated portion is melted. Thereby, the lid body 3 is fixed to the container 2, and the package body 20 is sealed.

As shown in FIGS. 10 to 14 , the sealing process of the package body 20 includes: step S203 of a welding process, in which the electron beam 10A, 10B is not irradiated to a predetermined area and remains as an unsoldered portion 15, and the area other than it is sealed; annealing Process step S204, in which annealing treatment is performed by irradiating a predetermined area on the trajectory of the electron beam 10A with the electron beam 10C in such a manner as to trace the trajectory; Process step S205, in which the formed unwelded portion 15 is discharged from a welding process. gas or gas derived from volatile components generated by the annealing process; and the secondary soldering process step S206, wherein the unwelded portion 15 is irradiated while scanning the electron beam 10D to completely seal the package body 20. In addition, the primary soldering process step S203 is divided into the first beam irradiation process step S203a and the second beam irradiation process step S203b in which the irradiation patterns (irradiation trajectories) are different.

However, the electron beam irradiation in this embodiment is performed using a normal electron beam processing apparatus. The details of the electron beam processing apparatus are omitted here, but the electron beam processing apparatus at least includes: an electron gun for generating electron beams; and a processing chamber in which an object to be processed is disposed (here corresponds to the package 20 in FIG. 2 ). , to perform welding by irradiating the generated electron beams to the workpiece at the same time; and a deflector for controlling the advancing route of the electron beams.

The electron beam generated in the electron gun is deflected by the deflector and introduced into the processing chamber, and then the deflector controls the forward path so that the desired beam is drawn on the package 20 of FIG. Flow trajectory for irradiation. During processing with such an electron beam processing device, the inside of the device is kept in a vacuum state. In addition, the deflector deflects the electron beams by using a magnetic field, and is composed of, for example, a coil or the like.

When sealing the package 20 , first, as shown in FIGS. 11 and 12 , step S203 (see FIG. 10 ) is performed as a primary soldering process for forming the unsoldered portion 15 . The width of the unsoldered portion 15 is preset to W, so that the gas generated during the soldering can be efficiently exhausted and the inside of the package 20 can be kept in a high vacuum. Here, in the area between the point P and the point R (hereinafter referred to as the unwelded portion forming area 15'), a predetermined width is formed by steps S203a and S203b (see FIG. 10 ) of the first and second beam irradiation steps. Unsoldered part of W15.

Specifically, as shown in FIG. 11 , the package 20 is irradiated with an electron beam from the lid 3 side, starting from point P, which is one end of the unsoldered portion forming region 15 ′ (that is, the end that becomes the unsoldered portion 15 ). 10A, and then scan sequentially in the same direction as clockwise along the periphery of the rectangular cover body 3 until point Q. Here, such irradiation of the electron beam 10A from the point P to the point Q in the same clockwise direction is referred to as a first beam irradiation step S203 a (see FIG. 10 ). In step S203a of the first beam irradiation process, the point P to be the starting point of beam irradiation is set near the center of one of the pair of long sides of the cover 3, and the electron beam 10A travels from the point P along the center of the cover 3. The perimeter sequentially scans one short side, the other long side, and the other short side. In addition, the point Q to be the end point of beam irradiation is set on the same side as the point P, and the electron beam 10A is scanned to this point Q to perform beam irradiation. Here, as shown in FIG. 12 , point Q is located on the upstream side in the scanning direction of electron beam 10A from point R which is the other end of unwelded portion forming region 15' (i.e., the other end to become unwelded portion 15).

As described in the prior art, when the irradiation of the electron beam 10A is stopped at the point Q, termination processing such as increasing the beam irradiation speed or the like is performed. In such a stop operation, due to the influence of a small amount of beam irradiation or preheating in the termination process, the sealing material 4 is not expected to be melted in the region, specifically, in the unwelded portion closer to the point R than the point Q. In the area where the area 15' is formed, the sealing material 4 is melted and welded. However, since the point Q, which is the end point of the electron beam 10A, is set in an area other than the unwelded portion forming area 15', the influence of stopping the irradiation of the electron beam 10A at point Q does not affect the unwelded portion forming area 15'.

Then, as shown in FIG. 12 , the package 20 is irradiated with an electron beam 10B from the lid 3 side from the point R which is the other end of the unsoldered portion forming region 15 ′ (that is, the other end which becomes the unsoldered portion 15 ). . The electron beam 10B is directed toward point Q, the end point of the first beam irradiation process step S203a, along the periphery of the cover 3 in a direction opposite to the beam scanning direction of the first beam irradiation process step S203a, that is, along the Scan in the opposite direction of the clockwise. Here, the irradiation of the electron beam 10B in the counterclockwise direction from the point R to the point Q is referred to as the second beam irradiation step S203b (see FIG. 10 ).

In addition, here, the end point of step S203b of the second beam irradiation process is set as point Q, but it is also possible to go beyond point Q and set a predetermined point on the downstream side of the beam scanning direction (that is, closer to point P) than point Q. point) as the endpoint.

In addition, in the second beam irradiation process step S203b, as described above, the electron beam is scanned in the direction opposite to the beam scanning direction in the first beam irradiation process step S203a, but the scanning direction of such an electron beam is Control, which can be easily controlled by the deflector of the electron beam processing device described.

When the irradiation of the electron beam 10B is stopped at the point Q, termination processing is performed in the same manner as in the case of step S203a in the first beam irradiation step. Therefore, in the stopping operation of the electron beam 10B, as mentioned above, due to the influence of a small amount of beam irradiation or preheating in the termination process, in the region where the sealing material 4 is not expected to be melted, specifically, at the ratio point In the region where Q is closer to the point P, the sealing material 4 is melted and welded. However, since the point Q, which is the end point of the electron beam 10B, is set in an area other than the unwelded portion forming area 15 ′, the influence of stopping the irradiation of the electron beam 10B at point Q does not affect the unwelded portion forming area 15 ′. .

Through the above step S203a of the first beam irradiation process and step S203b of the second beam irradiation process, the sealing material 4 in the region irradiated with the electron beams 10A, 10B is melted, and thus the lid body 3 and the container are welded and fixed by the sealing material 4 2. On the other hand, in the unwelded portion forming region 15' where the electron beams 10A, 10B are not irradiated, that is, the region between the point P and the point R, the unwelded portion 15 having a predetermined width W is formed. Here, the unsoldered portion 15 corresponds to a communicating portion connecting the inner space of the container 2 (that is, the housing portion) in which the crystal resonator 1 (see FIG. 2 ) is accommodated, and the outside of the container 2 (specifically, the processing chamber).

As mentioned above, in the conventional method shown in FIG. 29 and FIG. 30, when the electron beam is scanned from the point P to the same direction as the clockwise direction to the point R to form the unwelded portion 15, it is difficult to make the flow of the beam The end point coincides with the point R which is one end of the unwelded portion 15, so it is difficult to form the unwelded portion 15 with the designed width W.

In contrast, in the present embodiment, the point R corresponding to one end of the unwelded portion 15 is constituted by the starting point of the second beam irradiation step S203b, regardless of whether the point R is in the first beam irradiation step S203a or in the second beam irradiation step S203b. Neither of the two beams becomes the end point of the beam in step S203b of the beam irradiation process, so that one end of the unwelded portion 15 can be easily aligned with the point R with high precision. That is, the unwelded portion 15 is characterized in that the unwelded portion 15 is formed between the scanning start points in the irradiation of the two beams 10A, 10B having different processing patterns, with the two starting points P, R as both ends.

In addition, at point Q, which is the end point of step S203a of the first beam irradiation process, the part of sealing material 4 beyond point Q is melted by residual heat or the like, but since point Q and its surrounding parts have nothing to do with the formation of unwelded part 15, Therefore, it is not necessary to control the position of the end point with high precision here.

Therefore, according to the method of the present embodiment, the unwelded portion 15 can be formed between the point P and the point R as designed with high precision and easily. As a result, the formation limit of the width W of the unwelded portion 15 , which was conventionally about 0.5 mm, is raised to about 0.2 mm. Actually, considering the yield of the package 20 , the unsoldered portion 15 with a width W of 0.5 mm can be stably formed.

After forming the unwelded portion 15 as described above, as shown in FIG. The electron beam 10C is irradiated in the same manner. By the irradiation of the electron beam 10C, the package body 20 is heated and dried to be annealed (step S204 of the annealing process in FIG. 10 ). Specifically, the package 20 is irradiated with the electron beam 10C from the lid body 3 side with the point S on the trajectory of the electron beam 10A on which the unsoldered portion 15 is not formed as a starting point, and the electron beam 10C is scanned along the trajectory of the electron beam 10A to The end point is a point T on the trajectory of the electron beam 10A. Therefore, the trajectory of the electron beam 10C coincides with the beam current trajectory of the electron beam 10A.

The output value of the electron beam 10C may be the same as or lower than the output value of the electron beams 10A and 10B in step S203 of the primary welding process in FIG. 10 . Here, the output value of the electron beam 10C is set to be lower than the output value of the electron beams 10A and 10B, and scanning is performed a plurality of times. The output lower than that of the electron beams 10A and 10B refers to a beam output value at which the sealing material 4 hardly melts.

In the above, the case where the annealing process step S204 is performed after the primary welding process step S203 in FIG. 10 is illustrated, but the annealing process step S204 may be performed before the primary welding process step S203.

In addition, the scanning distance of the electron beam 10C (specifically, the distance between point S and point T) is appropriately set according to the distance that can effectively realize the annealing treatment by the irradiation of the electron beam 10C. The scanning distance of the electron beam 10C is appropriately set for the size of 20, the material of the container 2, and the like.

By irradiation of the electron beam 10C, the package 20 is heated and dried in the vacuum state processing chamber of the electron beam processing apparatus, and in particular, the entire container 2 is heated in a short time. Then, in the package 20 after heating, the gas generated in the soldering in step S203 of the above-mentioned primary soldering process is discharged from the inside of the package 20 to the outside through the opening (that is, the communication portion) formed in the unsoldered portion 15, At the same time, the volatile components adhering to the container 2 or the cover 3 etc. are discharged from the inside of the package 20 to the outside through the opening (that is, the communication part) formed in the unwelded part 15 due to the volatilization of the annealing treatment (Fig. 10 step S205).

In this case, the inside of the package 20 communicates with the processing chamber of the electron beam processing device through the unsoldered portion 15 as an unsealed opening, especially here, the processing chamber is in a vacuum state, so the gas is promoted from the inside of the package 20 to the inside of the package 20. Exhaust from the processing chamber efficiently discharges gas. Therefore, it is possible to maintain a high vacuum state inside the package 20 . At this time, after step S204 of the annealing treatment process, by leaving the package 20 in the processing chamber for a predetermined period of time, the discharge of gas is naturally promoted.

After performing the discharge of gas as described above (step S205 in FIG. 10 ), as shown in FIG. The package body 20 is sealed. Here, such a process of sealing the unwelded portion 15 is referred to as a secondary welding process step S206 (see FIG. 10 ), and this secondary welding process step S206 corresponds to a communication portion beam welding process.

In step S206 of the secondary welding process in FIG. 10 , as shown in FIG. 14 , the electron beam 10D is scanned from the point R at one end of the unwelded portion 15 toward the point P at the other end to perform beam irradiation. Thereby, the unsoldered portion 15 is soldered and the package 20 is sealed. Actually, since the distance between the point P and the point R is about 0.5 mm, it is also possible to perform welding by spot irradiation with a laser instead of the electron beam 10D.

In such a secondary welding process step S206, since the welding area is narrower than that of the primary welding process step S203 of FIG. 10, the amount of gas generated accompanying welding is small. Therefore, the final gas enclosed in the package 20 can be suppressed, and the inside of the package 20 can be kept in a good vacuum state with a vacuum degree of 13 Pa or less.

By carrying out each process in this way, according to the package manufacturing method of this embodiment, as shown in FIG. 2 , it is possible to manufacture a package 20 configured by housing the crystal resonator 1 in a high-vacuum container 2 sealed with a lid 3 via a sealing material 4 . .

However, as described in Embodiment 1, usually in the manufacture of the package 20, a series of manufacturing steps are performed in one batch to manufacture the package 20, and each process is performed on a plurality of packages 20 in one batch. , manufacturing multiple packages 20 at the same time. Therefore, a method of simultaneously manufacturing a plurality of packages 20 using the above-mentioned method of manufacturing a package will be exemplified below.

In addition, in the following, the primary welding process step S203 of FIG. 10 to the secondary welding process step S206 are demonstrated, and processes other than these are processed by the same method as conventional.

15 to 18 are schematic plan views illustrating a method of simultaneously manufacturing a plurality of packages 20 using the above-mentioned manufacturing method, and show plan views of the inside of the processing chamber 21 of the electron beam processing apparatus. Here, in the processing chamber 21, a plurality of packages 20 are arranged in a plurality of columns and rows at predetermined intervals.

As shown in FIG. 15 , first, the first beam irradiation step S203 a (see FIG. 10 ) shown in FIG. 11 is performed in each package 20 arranged in the processing chamber 21 . In this case, for example, for one row, the adjacent packages 20 are sequentially irradiated with the electron beam 10A, and after one row is completed, the adjacent row is similarly irradiated with the electron beam 10A. Alternatively, for one row, the adjacent packages 20 are sequentially irradiated with the electron beam 10A, and after one row is completed, the adjacent row is similarly irradiated with the electron beam 10A. The advancing path of the electron beam 10A is appropriately and easily controlled by a deflector (not shown).

Next, as shown in FIG. 16, step S203b of the second beam irradiation process shown in FIG. 12 (see FIG. 10) is performed. In this case, as in step S203a (see FIG. 10 ) of the above-mentioned first beam irradiation process, the plurality of packages 20 arranged in the same column or the same row are sequentially irradiated with electrons for each adjacent package 20 . After one column or one row is completed, the beam 10B is similarly irradiated to the adjacent column or row with the electron beam 10B. Thereby, unsoldered portions 15 can be formed on each of the plurality of packages 20 .

Here, in step S203b of the second beam irradiation process as described above, since one package 20 is irradiated with the electron beam 10B to form the unsoldered portion 15, the other packages 20 are sequentially irradiated with the electron beam 10B to form the unsoldered portion. 15, therefore, in the package 20 in which the unsoldered portion 15 is formed, gas can be exhausted from the unsoldered portion 15 while the other package 20 is irradiated with the electron beam 10B. Therefore, the discharge efficiency of gas is improved.

Next, as shown in FIG. 17 , step S204 (refer to FIG. 10 ) of the annealing process shown in FIG. 13 is performed. Also in this case, as in step S203a (see FIG. 10 ) of the above-mentioned first beam irradiation process, a plurality of packages 20 arranged in the same column or row are sequentially irradiated for each adjacent package 20 . After one column or one row is completed, the electron beam 10C is similarly irradiated to the adjacent column or row with the electron beam 10C. Thereby, the annealing treatment can be performed on each of the plurality of packages 20 .

In step S204 of such an annealing treatment process, since the electron beam 10C is sequentially irradiated to the plurality of packages 20 , while the electron beam 10C is irradiated to the other packages 20 , the adhesion to the container 2 or The gas of the volatile component on the cover body 3 etc. is exhausted from the unwelded part 15 . Therefore, the gas discharge step S205 (refer to FIG. 10 ) can be performed simultaneously with the annealing treatment step S204 without taking time to reinstall the gas discharge step.

In addition, since the processed package 20 can be naturally cooled while the other package 20 is being processed, it is not necessary to re-install the cooling process of the package 20 and take time. Therefore, an improvement in the manufacturing efficiency of the package 20 is achieved. That is, if the annealing treatment is performed in a heating furnace as in the past, since the tray on which the package is mounted is also heated, there is a possibility that the temperature of the package cannot be cooled to a temperature suitable for beam soldering without a special cooling process. However, in the present invention, since there is no need for fixtures such as a heating tray, each package 20 is irradiated with a beam and heated for each package 20, so the annealed package can be naturally cooled in a short time. Body 20.

After forming the unsoldered portion 15 on each package 20 as described above, and then annealing, as shown in FIG. Step S206 of the secondary soldering process shown in FIG. 14 is performed (see FIG. 10 ). In this case, as in the case of step S203 (refer to FIG. 10 ) of the above-mentioned primary soldering process, for a plurality of packages 20 arranged in the same column or in the same row, electronic scanning is sequentially performed for each adjacent package 20 . The electron beam 10D is irradiated, and after one column or row is completed, the adjacent column or row is similarly scanned and irradiated with the electron beam 10D. As a result, the unsoldered portions 15 of the respective packages 20 are sequentially soldered to completely seal the packages 20 .

In addition, above, the case where the electron beam 10D is used in step S206 of the secondary welding process has been described, but the type of beam flow is not limited thereto, and welding may be performed using laser light.

In addition, in the above, the case where the electron beam 10C is scanned so as to draw on the trajectory of the electron beam 10A in the annealing process step S204 has been described, but the present invention is not limited thereto, and the outer surface of the bottom wall of the container 2 may be Annealing is performed by irradiating laser light. In this case, the predetermined area outside the bottom wall of the container 2 may be irradiated with laser light in a spot pattern, or beam irradiation may be performed by scanning.

According to the above manufacturing method, the package 20 including the gas originating from the volatile components adhering to the container 2, the lid body 3, etc. can be efficiently discharged to the outside by the annealing treatment in the annealing treatment step S204 (see FIG. 10 ). gas inside. Therefore, similarly to the case of the first embodiment, the degree of vacuum in the package 20 can be increased.

In addition, here, in step S203 (refer to FIG. 10 ) of the welding process once, since the electron beam can be irradiated twice to form the unwelded portion 15 whose both ends are made up of the starting point of the beam irradiation, it is possible to form the unwelded portion 15 with high precision. Weld part 15. Therefore, the unwelded portion 15 having a desired width W can be accurately formed at a desired position, and the width W of the unwelded portion 15 can be reduced compared with conventional ones.

Therefore, the unwelded portion 15 will not be erroneously sealed in order to reduce the width W of the unwelded portion 15. In addition, since the width W of the unwelded portion 15 is smaller than before, it is possible to further reduce the time required for the secondary welding process. The amount of gas generated during welding in step S206 (see FIG. 10 ). Therefore, the degree of vacuum in the package 20 can be further increased.

Furthermore, since the degree of vacuum in the package 20 is increased in this way, the degree of vacuum in the package 20 can be maintained at 13 Pa or less, and as a result, it is possible to prevent the characteristics and reliability of the crystal vibrator 1 from being affected by the gas generated during soldering. deterioration. Therefore, it is possible to realize the crystal oscillator package 20 having good characteristics and stable reliability. Specifically, in the package 20 manufactured by the above manufacturing method, the equivalent series resistance value (CI value) of the crystal resonator 1 can be reduced, and the crystal resonator package 20 with constant quality and stable oscillation characteristics can be realized.

In addition, as shown in FIG. 13, in the annealing process step S204 (refer to FIG. 10) of the above-mentioned method, since the electron beam 10A formed in the primary welding process step S203 (refer to FIG. 10) is scanned in such a manner as to trace The electron beam 10C, so the trajectory of the electron beam 10C coincides with the trajectory of the electron beam 10A, and thus, in the completed package 20, a good appearance can be achieved.

In addition, since the annealing treatment in step S204 of the annealing treatment process is performed using the electron beam 10C in the same manner as the primary welding process step S203 using the electron beams 10A and 10B, the annealing treatment can be performed in the same processing chamber using the same electron beam processing device. Process step S204 and one welding process step S203. Therefore, there is no need to separately provide an annealing structure (for example, a front chamber or a rear chamber of a sealed processing chamber, which was conventionally required), and thus the device cost can be reduced. In addition, since step S204 of the annealing process is continuously performed from one welding process in a vacuum state processing chamber, it is possible to efficiently discharge gas while improving manufacturing efficiency.

In addition, the method of simultaneously manufacturing a plurality of packages 20 is not limited to the above method. For example, in the above description, after the unsoldered portions 15 are formed on the plurality of packages 20, each package 20 is annealed, but one package 20 may be continuously formed and annealed after the unsoldered portions 15 are formed. , forming the unsoldered portion 15 of the other package body 20 .

In this case, in the annealed package 20 , the gas including the volatile components adhering to the container 2 can be efficiently discharged while the other package 20 is being processed. Therefore, efficient gas discharge can be realized, and the time required for gas discharge (that is, the time required for step S205 in FIG. 10 ) can be shortened.

Alternatively, the primary soldering process step S203, the annealing process step S204, the gas discharge process step S205, and the secondary soldering process step S206 shown in FIGS. , after one package 20 is completed, the next package 20 is processed.

(Embodiment 4)

19 is a schematic plan view for explaining the electron beam irradiation method in the annealing step in the package manufacturing method according to Embodiment 4 of the present invention, showing the trajectory of the electron beam irradiated on the package.

As shown in FIG. 19 , in this embodiment, the irradiation direction of the electron beam 10C' irradiated in step S204 (see FIG. 10 ) of the annealing treatment process is different from the irradiation direction of the electron beam 10C (see FIG. 13 ) in Embodiment 1. on the contrary.

That is, in the present embodiment, the electron beam 10C' is irradiated starting from the point T on the trajectory of the electron beam 10A and simultaneously ending at the point S. Also in this embodiment configured as described above, the same effect as that described in Embodiment 3 can be obtained.

(Embodiment 5)

20 is a schematic plan view for explaining the electron beam irradiation method in the annealing step in the package manufacturing method according to Embodiment 5 of the present invention, showing the trajectory of the electron beam irradiated on the package.

As shown in FIG. 20 , in this embodiment, the irradiation position of the electron beam 10C" in the annealing step S204 (see FIG. 10 ) is different from the irradiation position of the electron beam 10C in the first embodiment.

Specifically, the electron beam 10C″ scans on the electron beam 10A trajectory starting from the point S′ on the electron beam 10A trajectory formed on the short side close to the point Q among the pair of short sides of the package 20. point T′ which is the end point. In this case, the scanning distance of the electron beam 10C″ may be the same as that of the electron beam 10C in Embodiment 1, or may be different. Here the scanning distance is the same. Also in this embodiment configured as described above, the same effects as those described in Embodiment 1 can be obtained.

As can be seen from Embodiments 3 to 5, the scanning position of the electron beam in step S204 (see FIG. 10 ) of the annealing treatment step in the manufacturing method of the package of the present invention is as long as it is at the unsoldered portion 15 (see FIG. 12 ) and its vicinity. In addition, it may be any one of the trajectories of the electron beam 10A and the electron beam 10B formed in step S203 (see FIG. 10 ) of the single welding process, and may extend over both the trajectories of the electron beam 10A and the electron beam 10B. In addition, in the annealing process step S204 , when the vicinity of the unwelded portion 15 is scanned with the electron beam 10C, the unwelded portion 15 may be affected.

(Embodiment 6)

21 is a schematic plan view for explaining the electron beam irradiation method in the annealing step in the package manufacturing method according to Embodiment 6 of the present invention, showing the trajectory of the electron beam irradiated on the package.

As shown in FIG. 21 , in this embodiment, in the annealing process step S204 (see FIG. 10 ), two regions on the trajectory of the electron beam 10A formed in one welding process step S203 (see FIG. 10 ) are For drawing, the electron beam 10C' and the electron beam 10C" are scanned. For example, after the electron beam 10C' is irradiated in the same manner as in the third embodiment described above, the electron beam 10C" is irradiated in the same manner as in the fifth embodiment described above.

Also in the present embodiment configured as described above, the same effects as those described in the third embodiment can be obtained. In addition, the present embodiment is an example of a configuration in which electron beams 10C', 10C" are irradiated to multiple points on the trajectory of electron beam 10A in step S204 (see FIG. 10 ) of the annealing process. The electron beams 10C', 10C" The combination of irradiation positions is not limited to this. In addition, the scanning directions of the electron beams 10C', 10C" at the respective irradiation positions are not limited thereto. In addition, beam irradiation may be performed at two or more places.

In addition, in the above-mentioned Embodiments 3 to 6, the end points of the first beam irradiation process step S203a and the second beam irradiation process step S203b (see FIG. 10 ) in the primary welding process step S203 (see FIG. 10 ) The position of point Q is not limited to the position shown in FIG. 11 , and the position of point Q is not particularly limited as long as it is on the upstream side of point R in the scanning direction of electron beam 10A.

Hereinafter, an embodiment in which the end point Q of the first and second electron beam irradiation steps (step S203a and step S203b in FIG. 10 ) is a position other than the above will be described.

In addition, here, the case where the annealing step S204 (refer to FIG. 10 ) is the configuration of Embodiment 3 is exemplified, but the configuration of the annealing step S204 is not limited thereto, and may be any of Embodiments 4 to 6. a composition.

(Embodiment 7)

22 to 25 are schematic plan views for explaining the electron beam irradiation method in the primary soldering process, annealing process, and secondary soldering process of the manufacturing method of the package according to Embodiment 7 of the present invention, showing the electron beam irradiation method on the package. The trajectory of the electron beam on the body.

As shown in FIGS. 22 to 25 , in the first welding process step S203 (refer to FIG. 10 ), this embodiment is divided into the first beam irradiation process step S203a and the second beam irradiation process step S203b as in the third embodiment. (Refer to FIG. 10 ) The unwelded portion 15 is formed by irradiating the electron beams 10A and 10B twice, but the position of the end point Q' in the first beam irradiation step S203a is different from that of the third embodiment.

That is, as shown in FIG. 22, in the present embodiment, in the first beam irradiation step S203a (see FIG. 10), one end of the region 15' is formed with an unwelded portion (that is, one end of the unwelded portion 15 is formed). ), that is, the point P' is the starting point, and the electron beam 10A is irradiated. Then, along the periphery of the rectangular cover 3, the electron beam 10A is sequentially scanned in the same direction as the clockwise, so that it reaches the other long side opposite to the long side of the cover 3 at the arrangement point P' and is arranged. The point Q'. In the present embodiment, this point Q' is the end point of step S203a (see Fig. 10 ) of the first beam irradiation step.

Then, as shown in FIG. 23 , as in Embodiment 3, in step S203b (refer to FIG. 10 ) of the second beam irradiation process, the other end of the region 15 ′ is formed with an unwelded portion (that is, it becomes an unwelded portion). The other end of the portion 15), that is, the point R' as the starting point, the electron beam 10B is irradiated, and the electron beam 10B is irradiated along the periphery of the cover body 3 toward the above-mentioned point Q', toward the beam of the first beam irradiation process step S203a (refer to FIG. 10 ). The direction opposite to the flow scanning direction, that is, scanning sequentially in the opposite direction to clockwise.

In addition, here, the end point of step S203b of the second beam irradiation process is set as point Q', but point Q' may be crossed, and a predetermined point on the downstream side of the beam scanning direction closer to point P' than point Q' may be set as end. Through such second beam irradiation step S203b, as in Embodiment 3, the unwelded portion 15 can be formed with a desired width W and a desired position with high precision.

After the unwelded portion 15 is formed as described above, as shown in FIG. 24 , similar to the case of Embodiment 3, the electron beam 10A formed in the second beam irradiation process step S203b (see FIG. 10 ) is formed on the trajectory of the electron beam 10A. In the manner depicted, the electron beam 10c is scanned. Thus, annealing treatment is performed by the electron beam 10C (annealing treatment step S204 in FIG. 10 ).

As described above in Embodiment 3, through this annealing treatment, the unwelded portion 15, the gas generated in the welding in the above-mentioned primary welding step S203a (see FIG. 10 ), and the volatilization originating from the welding on the container 2 are eliminated. The component gas is discharged from the inside of the package 20 to the outside through the unsoldered portion 15 as the opening (step S205 of the gas discharge process in FIG. 10 ).

Then, after the gas is exhausted for a predetermined time, the unsoldered portion 15 is irradiated with an electron beam 10D to melt the sealing material 4 of the unsoldered portion 15, thereby completely sealing the package 20 (that is, secondary soldering) (Fig. 10 Secondary welding process step S206). In such a secondary welding process step S206, as shown in FIG. 25, one end of the unwelded portion 15, that is, point R' is directed toward the other end, that is, point P', toward the first beam irradiation process step S203a (refer to FIG. 10 ) scans the electron beam 10D in the same direction as the beam scanning direction for beam irradiation. Actually, since the distance between the point P' and the point R' is about 0.5 mm, welding can be performed by spot irradiation with a laser instead of the electron beam 10D.

In addition, in the above, the case where the electron beam 10D is used to perform the secondary welding step S206 (see FIG. 10 ) has been described, but the type of beam flow is not limited thereto, and laser welding may also be used.

In the present embodiment configured as described above, the same effects as those described in the third embodiment can be obtained. In addition, the present embodiment and the third embodiment have the same effect in that a crystal resonator having good characteristics and stable reliability can be realized. , Embodiment 3 can achieve a better high-quality product rate. From the viewpoint of airtight sealing properties other than the unwelded portion 15 , it is preferable to continuously seal the four corners of the lid body 3 through one welding process.

(Embodiment 8)

FIG. 26 is a flowchart showing each step in the method of manufacturing a package according to Embodiment 8 of the present invention. As shown in FIG. 26 , in the package manufacturing method of this embodiment, in step S303 of the primary soldering process, the unsoldered portion is formed by one beam irradiation, that is, the primary soldering process step S303 is one process, It is different from Embodiment 3 in which step S203 of one welding process is two processes (step S203a and step S203b) as shown in FIG. 10 .

That is, in the manufacturing method of the package of this embodiment, as shown in FIG. In step S102 (refer to FIG. 1 ), the lid body 3 and the container 2 are spot-fixed (step S302 ) by the method described above. After the cover body 3 is fixed on the container 2 in this way, then, the electron beam 10A is irradiated from the side of the cover body 3, starting from the point P in FIG. The electron beam 10A is scanned once in a predetermined direction. Thereby, an unwelded portion 15 is formed between the point P and the point Q (primary welding process step S303).

After the primary welding process step S303 described above, similar to the annealing process step S204 of Embodiment 3 (see FIG. 10 ), annealing is performed by irradiating electron beam 10C as shown in FIG. 13 (annealing process step S304 ). Thereafter, the unwelded portion 15 (see FIG. 13 ) is exhausted from the unwelded portion 15 (see FIG. 13 ) by the same method as step S205 (see FIG. 10 ) in Embodiment 3, and the gas generated in step S303 of the primary welding process and the gas originating in step S304 of the annealing process are exhausted. Generated gas of volatile components (step S305). In addition, as in step S206 of Embodiment 3, as shown in FIG. 14 , the unwelded portion 15 is irradiated with an electron beam 10D to weld the unwelded portion 15 to complete sealing (secondary welding process step S306 ). In addition, laser light may be used instead of the electron beam 10D.

In the present embodiment having the above-mentioned configuration, compared with Embodiment 3 and the like in which the unwelded portion 15 is formed by secondary beam irradiation, the formation accuracy of the unwelded portion 15 is lowered. Compared with the case of Embodiment 3, etc., it increases. However, in this embodiment, the gas generated in the primary soldering step S303 or the gas generated in the annealing process can be efficiently removed by the annealing process S304 using the electron beam 10C, so that the manufactured package of FIG. A high degree of vacuum is formed inside the body 20 . Therefore, the same effects as those described in Embodiment 1 can be obtained.

(Embodiment 9)

In Embodiments 3 to 8 above, as shown in FIGS. 13, 19, 20, and 21, the electron beams 10C, 10C', The scanning position of 10C" is set as the unwelded part 15 (refer to FIG. 12 ) and its vicinity, and the electron beam 10A and the electron beam formed in step S203 (refer to FIG. 10 ) and step S303 (refer to FIG. 26 ) of one welding process. 10B trajectory, or across both the electron beam 10A trajectory and the electron beam 10B trajectory, but in addition, for example, also on the electron beam 10A and the electron beam 10B trajectory (that is, one welding The area other than the following part) is irradiated with the beam.

For example, in the manufacturing method of the package according to Embodiment 9 of the present invention, in the annealing step S204 of FIG. 10 or the annealing step S304 of FIG. As shown in FIG. 4 , beam irradiation is performed on a predetermined area of the bottom wall or side wall of the container 2 . In the annealing treatment at this time, in order to reduce damage to the container 2 or the lid body 3, an electron beam or a laser with a low output value is used. Also in this embodiment configured as described above, the same effects as those described in the third to seventh embodiments can be obtained.

Embodiments 1 to 9 described above are examples of the package manufacturing method of the present invention, and the present invention is not limited to Embodiments 1 to 9. For example, in the above-mentioned Embodiments 3 to 9, as shown in FIGS. 10 and 26 , after performing step S203 and step S303 of the welding process once, step S204 and step S304 of the annealing treatment process are performed. Before step S203 and step S303 of the process, step S204 and step S304 of the annealing treatment process are performed. Also, for example, in Embodiments 3 to 7, the annealing step S204 may be performed between the first beam irradiation step S203a and the second beam irradiation step S203b of the primary welding step S203 in FIG. 10 .

Here, as in Embodiments 3 to 9, in the case where the annealing process steps S204 and S304 are performed after performing the welding process step S203 and step S303 shown in FIGS. 10 and 26 to form the unwelded portion 15, Through the unsoldered portion 15 , the gas generated from the sealing material 4 and the like in steps S203 and 303 of the primary soldering process is more efficiently discharged to the outside of the package 20 . Therefore, the effects of the present invention can be exhibited more effectively.

In addition, in the above-mentioned Embodiments 3 to 7, in step S203 of the primary welding process shown in FIG. 10 , as shown in FIG. After the electron beam 10A is scanned in the same clockwise direction as the outer circumference of the body 3, as shown in FIG. However, as long as the electron beam scanning directions of the first beam irradiation process step S203a and the second beam irradiation process step S203b (see FIG. 10 ) are opposite, the electron beam scanning direction is not limited thereto. The scanning direction of the electron beam is appropriately set in consideration of the relationship with the mounting of the crystal resonator 1 and the arrangement position of the tuning fork-shaped opening end so that good characteristics can be realized in the crystal resonator 1 . In addition, the scanning direction of the electron beam 10D in the secondary welding process step S206 (see FIG. 10 ) is not limited to the direction shown in FIG. 14 , either.

In addition, the formation position of the unwelded part 15 is not limited to the position in the said Embodiment 3-7, It may be a position other than these. The formation position of the unwelded portion 15 is appropriately set in consideration of gas discharge efficiency and the like.

In addition, in the above-mentioned Embodiments 3 to 9, the beam 10D irradiated in step S206 (see FIG. 10 ) of the secondary welding process may be either electron beam or laser as described above, but, for example, in In Embodiments 3 to 7, and 9, since the width W of the unwelded portion 15 can be reduced as described above, it is suitable to seal (that is, spot seal) the unwelded portion 15 using a laser with a small beam spot diameter.

In addition, in Embodiments 3 to 8 described above, the electron beam 10C is irradiated once in the annealing process step S204 of FIG. 10 and the annealing process step S304 of FIG. 26 , but the electron beam irradiation may be repeated multiple times intermittently 10C. For example, after intermittently irradiating the electron beam 10C multiple times, the package 20 can be placed between 2 seconds and 60 seconds to discharge the gas (gas discharge step S205 in FIG. 10 and gas discharge step S205 in FIG. 26 ). S305).

In addition, in the above-mentioned Embodiments 3 to 9, in the primary welding process step S203 of FIG. 10 and the primary welding process step S303 of FIG. The electron beams 10A and 10B with high output values are used to weld the lid body 3 and the container 2, or the electron beams 10A and 10B with low output values may be irradiated one or more times to draw the trajectory and weld the container 2 and the lid. After heating the body 3 and the sealing material 4 to a predetermined temperature, electron beams 10A and 10B having high output values are irradiated to melt the sealing material 4 and weld the lid body 3 and the container 2 .

In Embodiments 1 to 9 described above, the electronic component sealing body (package 20 ) of the present invention has been described in which the tuning fork type crystal resonator 1 is housed in the container 2 , but other crystal resonators may also be housed. In addition, the invention is not limited to the crystal resonator 1, and the present invention can also be applied to an electronic component sealing body configured to accommodate other electronic components. For example, the present invention can also be applied to sealed electronic components in which piezoelectric vibrators, integrated circuits, SWA filters, and the like are accommodated in containers. Moreover, the manufacturing method of this invention can also be applied to the electronic component sealing body which has a shape other than a square shape.

Example

In the examples, the crystal vibrator package 20 of FIG. 2 was manufactured by the manufacturing method described in the above-mentioned third embodiment. In addition, in the comparative example, the crystal oscillator package 20 of FIG. 2 was manufactured by the manufacturing method shown in FIG. 29 and FIG. 30 without performing the annealing treatment by electron beam irradiation. In addition, for the crystal oscillator packages 20 of the examples and the comparative examples, the amount of increase in the equivalent series resistance CI value after baking and the average CI value were measured. Hereinafter, details will be described.

(Example)

In the embodiment, according to the method described in Embodiment Mode 3, the primary welding process (step S203 in FIG. 10 ) shown in FIGS. 11 and 12 and the annealing process (step S204 in FIG. 10 ) shown in FIG. 13 are performed. and the secondary soldering process shown in FIG. 14 (step S206 in FIG. 10 ), the crystal vibrator package 20 of FIG. 2 is manufactured.

(comparative example)

In the comparative example, the unwelded portion 55' was formed in the manner shown in Fig. 29 . Then, according to the method shown in Fig. 30, the unsoldered portion 55' is sealed to manufacture the crystal oscillator package 54.

Each crystal oscillator package 20 manufactured as described above was heated at 150° C. for 12 hours in an air atmosphere in a vacuum oven. Then, the amount of increase in the equivalent series resistance CI value after baking and the average CI value were measured.

FIG. 27 shows the measurement results of the equivalent series resistance CI value after baking of the crystal oscillator package 20 manufactured by the method of the example and the comparative example.

As shown in FIG. 27, the crystal vibrator package 20 manufactured by the method of the embodiment of the manufacturing method of the present invention has a smaller increase in the CI value after baking than the crystal vibrator package 20 manufactured by the method of the comparative example. In addition, the average CI value is also small. In particular, in the examples, the increase in the CI value is small, and the average CI value is also small.

Since the baking test is a test showing the heat resistance and reliability of the crystal vibrator package 20, the crystal vibrator package 20 of the embodiment has good heat resistance and reliability compared with the crystal vibrator package 20 of the comparative example. This effect is remarkable in the crystal oscillator package 20 of the embodiment.

As mentioned above, the manufacturing method of the electronic component sealing body of the present invention and the electronic component sealing body manufactured by this method can be used to realize the electronic component sealing body that maintains a high vacuum inside and has high manufacturing efficiency, and is especially suitable for the internal vacuum state. The characteristics and reliability of the device to be stored greatly affect the manufacture of sealed electronic components, for example, a sealed electronic component that houses a crystal vibrator or the like.

Claims (22)

1. the manufacture method of an electronic component encapsulation body is characterized in that, comprises at least:

Have opening and,, disposing the operation of described lid via the sealing material that the lid that makes described container and the described opening that covers described container engages by the periphery of this opening with the described opening of the container in the resettlement section of taking in electronic element in inside;

To described container and described lid at least one the irradiation line the annealing in process operation; With

The described sealing material of fusion engages the operation of described container and described lid.

2. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,

In described annealing in process operation, described line is shone in a place or the many places of the diapire of described container.

3. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,

In described annealing in process operation, described line is shone in a place or the many places of a sidewall of described container.

4. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,

In described annealing in process operation, described line is shone in a place or the many places of a plurality of sidewalls of described container.

5. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,

In described annealing in process operation, repeatedly shine described line off and on.

6. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,

In described annealing in process operation, laser is shone as described line.

7. the manufacture method of electronic component encapsulation body according to claim 1 is characterized in that,

Before described annealing in process operation, so that the state of the interconnecting part of the described resettlement section of the residual described container of small part and outside, the described sealing material of fusion engages described container and described lid,

After described annealing in process operation, seal described interconnecting part.

8. the manufacture method of electronic component encapsulation body according to claim 7 is characterized in that,

Also comprised before or after described annealing in process operation: described container has through hole in advance as described interconnecting part, to the through hole sealing material filling procedure of described through hole filling through hole sealing material,

To described through hole sealing material irradiation line, the described through hole sealing material filling by fusion seals described through hole.

9. the manufacture method of electronic component encapsulation body according to claim 8 is characterized in that,

Described through hole is set on the diapire of described container, and configuring external connection electrode on the described diapire of described container, in described annealing in process operation, to the described line of area illumination of the described diapire the configuring area of and described external connecting electrode regional except that the formation of described through hole.

10. the manufacture method of an electronic component encapsulation body is characterized in that, comprises at least:

Have opening and,, disposing the operation of described lid via the sealing material that the lid that makes described container and the described opening that covers described container engages by the periphery of this opening with the described opening of the container in the resettlement section of taking in electronic element in inside;

A welding sequence, it is at the described container that utilizes described sealing material to engage and the junction surface of described lid, the subregion of removing regulation is with external radiation exposure first line, the described sealing material in the zone of fusion except that this subregion, come described container of welded seal and described lid, and form the i.e. welding portion not of the described resettlement section of described container and outside interconnecting part in this subregion;

The annealing in process operation, it is for the unencapsulated described electronic component encapsulation body of the state of the described not welding portion that has kept forming by a described welding sequence, and at least one of described container and described lid shone second line; With

The secondary welding operation, it shines described the 3rd line through after being used for discharging the stipulated time of the gas in the described container from described not welding portion to described not welding portion, comes the described not welding portion of welded seal.

11. the manufacture method of electronic component encapsulation body according to claim 10 is characterized in that,

Described annealing in process operation will be identical with described first line that adopts in the described welding sequence line as described second line, in the mode of the irradiation of describing described first beam trace, shine a place or many places on the irradiation track of described first line in a described welding sequence.

12. the manufacture method of electronic component encapsulation body according to claim 10 is characterized in that,

At least described first line and described second line are electron beam or laser.

13. the manufacture method of electronic component encapsulation body according to claim 10 is characterized in that,

The output valve of described second line that adopts in the described annealing in process operation is lower than the output valve of described first line that adopts in the described welding sequence.

14. the manufacture method of electronic component encapsulation body according to claim 10 is characterized in that,

In a described welding sequence, divide the irradiation of carrying out described first line more than the secondary, between the initial point and the initial point in the line irradiation for the second time in the line irradiation first time, be two ends with this two initial point, form described not welding portion.

15. the manufacture method of electronic component encapsulation body according to claim 14 is characterized in that, a described welding sequence comprises:

Line irradiation process for the first time, first with the end that becomes described not welding portion is initial point, described first line of outer circumferential prescribed direction sequential scanning along described lid, to be positioned at than second of the other end that becomes described not welding portion thirdly is terminal point by line scanning direction upstream side more, shine described first line, be sealed to thirdly described from described first means of spot welds; With

Line irradiation process for the second time, described second with the other end that becomes described not welding portion is initial point, outer circumferentially direction sequential scanning described first line relative along described lid with described prescribed direction, at least shine described first line to as described first time the line irradiation process terminal point thirdly, be sealed to thirdly describedly from described second means of spot welds, form described not welding portion.

16. the manufacture method of electronic component encapsulation body according to claim 15 is characterized in that,

Described container has square shape,

In a described welding sequence, with four bights of described container be contained in described first and described thirdly between or be contained in described and described mode between thirdly at second, set described first point, described and described thirdly position at second.

17. the manufacture method of electronic component encapsulation body according to claim 15 is characterized in that,

Before a described welding sequence, also comprise described lid point is fixed in operation on the described container,

In described first time of a described welding sequence and for the second time in the line irradiation process, the point that removes described lid and described container admittedly the area configurations partly as described first and described second point of the irradiation initial point of described first line.

18. the manufacture method of electronic component encapsulation body according to claim 10 is characterized in that,

In described secondary welding operation, electron beam or laser are shone as described the 3rd line, to carry out described welded seal.

19. the manufacture method of electronic component encapsulation body according to claim 18 is characterized in that,

Utilize the described welded seal of the irradiation of described first line at least one operation of a described welding sequence or described secondary welding operation or described the 3rd line, comprising:

Preheating line irradiation process, it utilizes the irradiation of described first line or described the 3rd line as preheating procedure, and described container, described lid and described sealing material are heated to set point of temperature; With

Welding line irradiation process, the irradiation that it utilizes described first line or described the 3rd line makes the fusion of described sealing material, welds described container and described lid via described sealing material.

20. the manufacture method of electronic component encapsulation body according to claim 19 is characterized in that,

In described preheating line irradiation process, welding region is repeatedly shone described first line or described the 3rd line.

21. the manufacture method of an electronic component encapsulation body is characterized in that, comprises at least:

Have opening and,, disposing the operation of described lid via the sealing material that the lid that makes described container and the described opening that covers described container engages by the periphery of this opening with the described opening of the container in the resettlement section of taking in electronic element in inside;

The container top that the described sealing material of fusion engages described container and described lid engages operation;

The annealing in process operation, it is after described container top engages operation, at least one irradiating laser of described container and described lid;

Through hole sealing material filling procedure, it sealed material to the through hole filling through hole that is pre-formed on described container before or after described annealing in process operation; With

After described through hole sealing material filling procedure and described annealing in process operation,, come filling to seal the operation of described through hole by the described through hole sealing of fusion material to being filled in the described through hole sealing material irradiating laser in the described through hole.

22. an electronic component encapsulation body is characterized in that,

Be to make by the manufacture method of each described electronic component encapsulation body in the claim 1,10 or 21.

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