CN1964061A - An electrode substrate of an organic light emitting display device - Google Patents

Abstract

The invention discloses an electrode substrate of an organic light-emitting display device, wherein a lead area structure of the electrode substrate comprises an electrode layer, an adhesion layer and a lead layer; the adhesion layer contains one or more elements in the electrode layer and also contains one or more elements in the lead layer, or the adhesion layer contains one or more elements shared by the electrode layer and the lead layer. The invention is based on the problem that when low-resistance materials such as silver, copper and aluminum metals or alloys and mixtures containing silver, copper and aluminum are used for the lead layer, the adhesion of the low-resistance materials with the electrode layer is poor. In addition, after the adhesion layer is used, the surface appearance of the film of the lead layer is better than that of the film of the lead layer alone, so that the lead layer is not separated from the electrode layer. Meanwhile, the same etching solution can be used for the adhesion layer and the lead layer, and the manufacturing process is simple.

Description

An electrode substrate of an organic light emitting display device

technical field

The invention relates to an electrode substrate, in particular to an electrode substrate of an organic light-emitting display device.

Background technique

In recent years, the new organic electroluminescence display (OLED) does not require a backlight source, has a large viewing angle, low power, and its response speed can reach 1000 times that of a liquid crystal display, but its manufacturing cost is lower than that of a liquid crystal display with the same resolution. Therefore, Organic electroluminescent displays (OLEDs) are attracting more and more attention.

At present, the structure of the electrode substrate used in the OLED display includes a substrate, an electrode layer, and a wire layer. The materials used for the substrate include glass, plastic, etc.; the electrode layer is located on the substrate, and the materials used include ITO, IZO, ZnO, etc. These materials have both transparent and conductive properties, but these materials have low conductivity. A large amount of Joule heat will be generated, which will affect the luminous efficiency of the screen; the wire layer is located on the electrode layer to reduce the resistance of the electrode layer, especially the resistance of the lead area, so as to improve the efficiency of the entire screen. Currently widely used wire layer materials are high-melting-point metal materials such as chromium and molybdenum. Although these materials are relatively stable and relatively simple to make, they all have high electrical resistance, resulting in low luminous efficiency of the display.

Therefore, the material used for the wiring layer must have a low resistivity. The three metals of silver, copper, and aluminum are materials with very low resistivity among metal materials, and have good ductility, and are very promising to be used in display panels. However, the bonding force between the wire layer film and the electrode layer made of these three metals is not strong, especially after a long time of use, due to the heat generated after electrification and the influence of oxygen, sulfur and other atmospheres in the environment, thin films are prone to appear. The change in shape causes the wire layer to fall off or separate from the electrode layer, which in turn leads to an increase in the resistance of the substrate and a decrease in the efficiency of the light emitting device.

Contents of the invention

The object of the present invention is to provide an electrode substrate of an organic light-emitting display device with an adhesion layer that can strengthen the adhesion between the wire layer and the electrode layer, is easy to be etched, and whose etching solution is the same as that of the wire layer etching solution. .

The object of the present invention is achieved through the following technical proposals: the structure of the wire area includes an electrode layer and a wire layer in sequence; an adhesion layer is also provided between the electrode layer and the wire layer, and it is characterized in that the adhesion layer contains an electrode One or more elements in the layer, and also contain one or more elements in the wire layer, or the adhesion layer contains one or more elements common to the electrode layer and the wire layer.

The adhesion layer contains one or more elements of indium, tin, zinc, nickel or silver, copper and aluminum.

The material of the wire layer is metallic silver, silver alloy, a mixture containing silver metal, metallic copper, copper alloy, a mixture containing copper metal, metallic aluminum, aluminum alloy or a mixture containing aluminum metal.

The thickness of the wire layer is 100nm-600nm.

The present invention is based on the problem of poor adhesion to the electrode layer when silver, copper, aluminum metal or alloys or mixtures containing silver, copper, and aluminum are used for the wire layer. A layer containing one or more elements in the electrode layer and one or more elements in the wire layer, or one or more elements common to the electrode layer and the wire layer, is arranged between the layers. Adhesion layer, due to the diffusion effect, there is good adhesion between the three layers. In addition, after using the adhesion layer, the surface morphology of the wire layer film will be better than that of a separate wire layer film, so that the wire layer will not fall off from the electrode layer. At the same time, the same etching solution can be used for the adhesion layer and the wire layer, and the manufacturing process is simple.

Description of drawings

Fig. 1 is the structural representation before the etching of embodiment 1-6 of the present invention;

FIG. 2 is a schematic diagram of the etched structure of Embodiment 1-6 of the present invention.

Detailed ways

The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

Example 1

Refer to Figures 1 and 2. The electrode substrate of the organic light-emitting display device in this embodiment includes ITO (150nm) used as the electrode layer 1, on which the indium and silver mixture target is prepared into an adhesion layer 2 (5nm) by sputtering, and the silver target is sputtered The silver wire layer 3 was prepared by irradiation, and the film thickness was 160nm.

The metal silver wire layer 3 and the metal indium and silver mixture adhesion layer 2 can be simultaneously etched with an etching solution with a volume ratio of phosphoric acid: nitric acid: water = 9:1:3, and the etching rate is 40A/s. The underlying ITO is etched with an etching solution with a volume ratio of nitric acid:hydrochloric acid:water=1:10:10, and the etching rate is 10A/s. Through the above conditions, the structure shown in Figure 2 can be prepared. The surface resistance of the wire layer 3 is 0.1ohm/sq, heated at 120 degrees for 30 minutes, the surface resistance is 0.11ohm/sq, the surface morphology of the film is good when observed under a microscope, there is no obvious protrusion and peeling, showing good stability performance.

Example 2

Refer to Figures 1 and 2. The electrode substrate of the organic light-emitting display device in this embodiment includes ITO (150nm) serving as the electrode layer 1, on which a tin-silver alloy target material containing 2% tin is prepared as an adhesion layer 2 (5nm) by sputtering, and The silver wire layer 3 was prepared by sputtering the silver target, and the thickness of the film was 160 nm.

The metallic silver wire layer 3 and the metallic tin-silver alloy adhesion layer 2 can be simultaneously etched with an etching solution with a volume ratio of phosphoric acid: nitric acid: water = 9:2:3, and the etching rate is 60A/s. The underlying ITO is etched with an etching solution with a volume ratio of nitric acid:hydrochloric acid:water=1:10:10, and the etching rate is 10A/s. Through the above conditions, the structure shown in Figure 2 can be prepared. The obtained electrode substrate has a surface resistance of 0.11 ohm/sq. When heated at 80 degrees Celsius for 30 minutes, the surface resistance is 0.12 ohm/sq. The change in resistance before and after heating is less than 15%; after heating at 200 degrees Celsius for 1 hour, the surface resistance is 0.16 ohm/sq. sq, under the microscope, the surface morphology of the film is good, without obvious bumps and peeling, showing good stability.

Example 3

Refer to Figures 1 and 2. The electrode substrate of the organic light-emitting display device in this embodiment includes IZO (180nm) as the electrode layer 1, on which the zinc and silver mixture target is prepared into an adhesion layer 2 (5nm) by sputtering, and the silver target is sputtered The silver wire layer 3 was prepared by irradiation, and the film thickness was 160nm.

The metal silver wire layer 3 and the metal zinc and silver mixture adhesion layer 2 can be simultaneously etched with an etching solution with a volume ratio of phosphoric acid: nitric acid: water = 9:3:4, and the etching rate is 50A/s. The underlying IZO is etched with an etching solution with a volume ratio of nitric acid:hydrochloric acid:water=1:10:10, and the etching rate is 20A/s. Through the above conditions, the structure shown in Figure 2 can be prepared. The surface resistance of the obtained electrode substrate is 0.11 ohm/sq, heated at 80 degrees Celsius for 30 minutes, the surface resistance is 0.12 ohm/sq, and the resistance change before and after heating is less than 15%; after heating at 200 degrees Celsius for 1 hour, the surface resistance is 0.15 ohm/sq sq, under the microscope, the surface morphology of the film is good, without obvious bumps and peeling, showing good stability.

Example 4

Refer to Figures 1 and 2. The organic light-emitting display device electrode substrate of this embodiment includes ITO (180nm) as electrode layer 1, and contains 1% nickel in it, adopts sputtering method to prepare nickel-silver mixed layer on it as adhesion layer 2 (5nm ), the silver wire layer 3 (180nm) was prepared by sputtering with a silver target.

The metal silver wire layer 3 and the metal nickel-silver mixed adhesion layer 2 can be etched simultaneously with an etching solution with a volume ratio of phosphoric acid: nitric acid: water = 8:2:3, and the etching rate is 50A/s. The underlying ITO is etched with an etching solution with a volume ratio of nitric acid:hydrochloric acid:water=1:10:10, and the etching rate is 10A/s. Through the above conditions, the structure shown in Figure 2 can be prepared. The surface resistance of the obtained electrode substrate is 0.11ohm/sq, and the surface resistance is 0.11ohm/sq after heating at 80 degrees Celsius for 30 minutes, and the resistance change before and after heating is less than 15%; after heating at 200 degrees Celsius for 1 hour, the surface resistance is 0.14ohm/sq sq, under the microscope, the surface morphology of the film is good, without obvious bumps and peeling, showing good stability.

Example 5

Refer to Figures 1 and 2. The electrode substrate of the organic light-emitting display device in this embodiment includes ITO (150nm) used as the electrode layer 1, and the indium target is prepared as an adhesion layer 2 (5nm) by sputtering on it, and aluminum indium containing 0.5% indium is used The silver alloy wire layer 3 was prepared by sputtering the alloy target, and the thickness of the film was 160 nm.

The aluminum-indium alloy wire layer 3 and the metal indium adhesion layer 2 can be simultaneously etched with an etching solution with a volume ratio of phosphoric acid: nitric acid: water = 8:1:3, and the etching rate is 30A/s. The underlying ITO is etched with an etching solution with a volume ratio of nitric acid:hydrochloric acid:water=1:10:10, and the etching rate is 10A/s. Through the above conditions, the structure shown in Figure 2 can be prepared. The surface resistance of the wire layer 3 is 0.3ohm/sq, heated at 120°C for 30 minutes, the surface resistance is 0.33ohm/sq, the surface morphology of the film is good when observed under a microscope, there is no obvious protrusion and peeling, showing good stability performance.

Example 6

Refer to Figures 1 and 2. The electrode substrate of the organic light-emitting display device in this embodiment includes ITO (150nm) as the electrode layer 1, on which the tin target is prepared as an adhesion layer 2 (5nm) by sputtering, and chromium tin containing 2% tin is used The chrome-tin alloy wire layer 3 is prepared by sputtering the alloy target, and the film thickness is 250 nm.

The chrome-tin alloy wire layer 2 and the metal tin adhesion layer 3 can be simultaneously etched with an etching solution with a weight ratio of cerium ammonium nitrate: nitric acid: water = 10:6:45, and the etching rate is 200A/s. The underlying ITO is etched with an etching solution with a volume ratio of nitric acid:hydrochloric acid:water=1:10:10, and the etching rate is 10A/s. Through the above conditions, the structure shown in Figure 2 can be prepared. The surface resistance of the obtained electrode substrate is 0.80 ohm/sq, heated at 80 degrees Celsius for 30 minutes, the surface resistance is 0.85 ohm/sq, and the resistance change before and after heating is less than 15%; after heating at 200 degrees Celsius for 1 hour, the surface resistance is 0.88 ohm/sq sq, under the microscope, the surface morphology of the film is good, without obvious bumps and peeling, showing good stability.

The reason for the improvement of the adhesion is that elements such as tin, zinc, nickel, or indium constituting the adhesion layer 2 of the present invention diffuse to the electrode layer 1ITO or IZO in a very small amount, and when the interface disappears, the adhesion energy and the aggregation energy of the main body On the other hand, the silver, copper, aluminum and other elements in the adhesion layer 2 also diffuse to the wire layer 3 in a very small amount. Similarly, when the interface disappears, the adhesion energy is close to the condensation energy of the main body. Reaches the maximum value. If the adhesion layer 2 contains elements shared by the electrode layer 1 and the wire layer 3, for example, the adhesion layer 2 contains indium, the electrode layer 1 is ITO, and the wire layer 3 is a silver-indium alloy, and the indium element diffuses into the electrode layer in a very small amount. 1 On ITO, when the interface disappears, the adhesion energy is close to the cohesion energy of the main body and reaches the maximum; at the same time, the indium element also diffuses to the wire layer 3 in a very small amount. The energy is close to the maximum. In this way, there is good adhesion between the three layers through diffusion.

Although the preferred embodiments of the present invention have been described above, the technical scope of the present invention is not limited to the scope discussed above. The embodiments provided above are only used to further explain the present invention on the basis of the content of the invention. It should be understood that those skilled in the art can make various modifications to the above process, but all such modifications also fall within the scope of the present invention.

Claims (5)

1. the electrode base board of an organic light emitting display, its conductor section structure comprises electrode layer, conductor layer; Also be provided with adhesion layer between described electrode layer and the conductor layer, it is characterized in that, contain one or more elements in the electrode layer in the described adhesion layer, also contain one or more elements in the conductor layer simultaneously, perhaps contain one or more total in electrode layer and conductor layer elements in the adhesion layer.

2. the electrode base board of organic light emitting display according to claim 1 is characterized in that, contains one or more elements in indium, tin, zinc, nickel or silver, copper, the aluminium in the described adhesion layer.

3. the electrode base board of organic light emitting display according to claim 2 is characterized in that, the thickness of described adhesion layer is 1nm～20nm.

4. according to the electrode base board of claim 2 or 3 described organic light emitting displays, it is characterized in that the material of described conductor layer is argent, silver alloy, contain the mixture of silver metal, metallic copper, copper alloy, the mixture that contains the copper metal, metallic aluminium, aluminium alloy or contain the mixture of aluminum metal.

5. the electrode base board of organic light emitting display according to claim 4 is characterized in that, the thickness of described conductor layer is 100nm～600nm.