CN1944235B - Electromagnetic-magnetoelectric type micro mechanical resonant beam structure - Google Patents
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Abstract
电磁-磁电式微机械谐振梁结构，由基体和磁场中的谐振梁构成，以基体弹性膜片和双端固支简单谐振梁构成复合敏感结构，实现输入物理量的谐振式测量。基体和谐振梁采用SOI晶圆，以外延和刻蚀工艺加工而成，基体为低掺杂，谐振梁为N型1×1019cm-3掺杂，二者形成单晶硅整体结构；谐振梁两端具有电极，并与磁场方向正交，通过电流时产生厚度方向的安培力，振动时在两端产生感应电压；采用间歇式原理构成闭环系统，彻底解决了耦合干扰问题。本发明可简化结构和工艺，并有利于改善敏感结构的机械性能和稳定性。
The electromagnetic-magnetoelectric micromechanical resonant beam structure is composed of a matrix and a resonant beam in a magnetic field. The composite sensitive structure is composed of a matrix elastic diaphragm and a simple resonant beam fixed at both ends to realize the resonant measurement of the input physical quantity. The substrate and resonant beams are made of SOI wafers, which are processed by epitaxy and etching processes. The substrate is low-doped, and the resonant beams are N-type 1×10 19 cm -3 doped. The two form an overall structure of single crystal silicon; There are electrodes at both ends of the beam, which are orthogonal to the direction of the magnetic field. When the current passes through it, an Ampere force in the thickness direction is generated, and when it vibrates, an induced voltage is generated at both ends. The intermittent principle is used to form a closed-loop system, which completely solves the problem of coupling interference. The invention can simplify the structure and process, and is beneficial to improve the mechanical performance and stability of the sensitive structure.
Description
Technical field
The present invention relates to a kind of micro mechanical resonant beam structure, mainly as the resonant mode sensing unit in micro mechanical sensor or the inertia device.
Background technology
Resonance beam is the basic functional units in the MEMS device, generally constitutes the composite sensing structure together as final sensing unit and a sensing element.A sensing element, as flexible sheet, issuing looks in measurand q effect should be out of shape; Resonance beam is subjected to corresponding axial tensile force, its resonant frequency f with a sensing element distortion
nChange thereupon, thereby at f
nAnd set up corresponding relation between the measured q; Obtain f
nCan obtain q, Here it is resonant mode sensitive mechanism.
In order to obtain f
n, need manage to allow resonance beam be in resonant condition, and detect its resonant frequency f
r, therefore need transducer, i.e. vibrator and vibration pickup.Vibrator is a mechanical energy with transformation of electrical energy, makes the resonance beam vibration, and vibration pickup is transformed to electric energy with mechanical energy, obtains the vibration signal of resonance beam.Most transducers all need add other material on resonance beam structure wherein also comprises silica or silicon nitride dielectric layer between transducer and the beam main body, and these materials have constituted additional structure, and have constituted the multilayer materials structure with the resonance beam main body.These technologies are very important to the influence of beam mechanical performance.One solves thinking is exactly to constitute resonance beam with simple conductive material, and is placed in the magnetic field, utilizes electromagnetic force to realize exciting, utilizes electromagnetic induction to realize pick-up, promptly with beam from as electromagnetic actuator and magneto-electric vibration pickup.
Have the prior art based on the micromechanical resonance beam sensor of electromagnetism-magnetoelectricity principle, its adopts binary resonance beam, and two parallel simple harmonic beams are connected as one the H type that forms in midpoint, and a beam is as exciting, and another beam is as pick-up.This technology is the main each several part structure made from the epitaxy technique, the unstability of having avoided a plurality of parts combinations or bonding to introduce.For processing the hanging structure of resonance beam, grown on the backing material epitaxial loayer of a plurality of different levels of doping or polarity of this prior art is a sacrifice layer with some epitaxial loayer wherein, utilizes electrochemical corrosion and heavy doping to stop the erosion technology and removes sacrifice layer, keep required part, and the control structure size.Whole manufacturing process needs at least through 4 extensions and multiple etching, and the manufacturing of its central sill promptly needs the doped epitaxial of 2 variable concentrations, the technology slightly complicated.In addition, because excessive diffusion (out-diffusion) phenomenon of epitaxy technique, the interface between the epitaxial loayer can be tending towards " bluring ", and some occasion heavy doping meeting produces undesirable influence to structural-mechanical property.
Because two simple harmonic beams also are communicated with on electric, have the common mode coupled interference, exciting and pick-up need be coupled through differential transformer.The prior art that the simple harmonic beam that adopts similar technology is also arranged in addition, this technology utilize the impedance operator of resonance beam to realize exciting and pick-up, and the coupled interference problem more is difficult to solve.
Summary of the invention
The technical problem to be solved in the present invention: overcome the deficiencies in the prior art, provide a kind of and can solve the coupled interference problem well, and simple in structure, practical electromagnetic-magnetoelectric type micro mechanical resonant beam structure.
Technical solution of the present invention: electromagnetic-magnetoelectric type micro mechanical resonant beam structure, constitute by the resonance beam in matrix and the magnetic field, matrix comprises a flexible sheet that is out of shape with measurand, the resonance beam two fixed ends is in the flexible sheet surface, its intrinsic frequency changes with flexible sheet, realizes that the resonant mode of input physical quantity is measured; Matrix and resonance beam adopt the SOI wafer, process with extension and etching technics; The resonance beam two ends have electrode, and with the magnetic direction quadrature, produce the Ampere force of thickness direction during by electric current, produce induced voltage at two ends during vibration, adopt the work of batch (-type) mode to constitute closed-loop system, with thorough solution coupled interference problem.
Described magnetic field adopts permanent magnet or solenoid to produce, and the phase different pole is positioned at the resonance beam both sides, thus magnetic field pass resonance beam and with its length direction and thickness direction quadrature.
The SOI wafer that described matrix and resonance beam adopt is by SiO
2Buried layer (BOX), monocrystalline silicon layer (SCS) and substrate are formed, BOX bed thickness 1～2 μ m; The SCS layer is N type (mixing phosphorus), doping content about 1 * 10
19～2 * 10
19Cm
-3, thick about 4～10 μ m, substrate is low-doped N type.
Described matrix and resonance beam adopt the SOI wafer, and be as follows with extension and etching technics processing method:
(1) utilize etching technics that the SCS layer and the BOX layer of described SOI wafer are carried out selective removal, with the reserve part of BOX layer as sacrifice layer;
(2) in body structure surface growth N type 1 * 10
19Cm
-3First epitaxial loayer that mixes, the reserve part and the substrate of connection SCS layer constitute the monocrystalline silicon overall structure;
(3) deposit TEOS utilizes the chemically mechanical polishing complanation, regrows second epitaxial loayer of same doping, constitutes new monocrystalline silicon overall structure;
(4) utilize selective etch to remove remaining SiO
2, discharge the resonance beam that both-end props up admittedly; Epi-layer surface outside the resonance beam two ends is made electrode, with connecting circuit.
Described employing service intermittent mode constitutes closed-loop system and comprises exciting circuit, resonance beam, testing circuit and control circuit, and in foment, control circuit control exciting circuit output accumulation signal makes the resonance beam starting of oscillation; At detected state, control circuit control exciting circuit cuts out accumulation signal, resonance beam freedom of entry vibrational state, amplitude is decayed gradually but still can be kept a period of time, the detection and the amplification of pick-up signal are carried out in the utilization of control circuit control testing circuit during this period of time, treat resonance beam near the failure of oscillation state, and exciting circuit is exported accumulation signal once more, make resonance beam starting of oscillation once more, so repeat.
Principle of the present invention: exciting of the present invention and pick-up principle are as shown in Figure 2.Two resonance beam 2 are same beam among the figure, the situation of 2 exciting functions of last figure expression resonance beam, and figure below is represented the situation of 2 pick-up functions of resonance beam.Two end faces at resonance beam 2 two ends promptly adopt both-end to prop up mode admittedly for propping up face 41 admittedly.Among the figure, the x axle is the length direction of resonance beam 2, also is sense of current, and the z axle is the thickness direction of beam, also is direction of vibration, and the y axle is the width of resonance beam 2, also is the roughly direction in magnetic field.If pass y axle component being distributed as of the magnetic induction intensity of resonance beam 2 along the x axle
Flow through alternating current i (t) in the resonance beam 2, then the suffered z of infinitesimal dx to Ampere force is
According to right-hand screw rule,
Direction is z axle (thickness) direction, so resonance beam 2 is subjected to the alternation active force of thickness direction and starting of oscillation.
Principle of the present invention: exciting of the present invention and pick-up principle are as shown in Figure 2.Among the figure, the x axle is the length direction of resonance beam 2, also is sense of current, and the z axle is the thickness direction of beam, also is direction of vibration, and the y axle is the width of resonance beam 2, also is the roughly direction in magnetic field.If pass y axle component being distributed as of the magnetic induction intensity of resonance beam 2 along the x axle
Flow through alternating current i (t) in the resonance beam 2, then the suffered z of infinitesimal dx to Ampere force is
According to right-hand screw rule,
Direction is z axle (thickness) direction, so resonance beam 2 is subjected to the alternation active force of thickness direction and starting of oscillation.
When resonance beam 2 vibrations, resonance beam 2 two ends produce the alternating current impression electromotive force.If the z of beam to instantaneous velocity is
Then induced electromotive force is
Wherein L is resonance beam 2 effective lengths.Only consider single order mode, then each point
Homophase, and the hypothesis load resistance is enough big, then can obtain the interchange pick-up voltage v of reflection resonance beam transient vibration state at resonance beam 2 two ends
i(t)=E (t).
Obtain v
i(t) just solved the pick-up problem, but the detection of pick-up signal remains a difficult problem.Resonance beam 2 of the present invention is the simple harmonic beam, frame for movement and electrical structure overlap fully, so exciting and pick-up can only shared conductors (resonance beam), faint pick-up signal is flooded by accumulation signal fully, adopts conventional method to be difficult to really realize both decoupling zeros.Can use for reference batch (-type) (Burst) principle that people such as Thierry Corman, Kjell Nor é n propose in paper " " Burst " Technology with Feedback-Loop Control for Capacitive Detection and Electrostatic Excitation of Resonant Silicon Sensors " for this reason.But concrete principle of the present invention is different with it.Though this paper has adopted the intermittent drive mode, but still attempt to make working sensor in the continuous shaking state, because sensor output signal is very faint, and phase place is very sensitive to noise, actual difficult reliable realization of continuous shaking, and related circuit is also complicated.Therefore the present invention adopts " intermittent control shaking " but not " intermittent drive " principle that this paper proposes makes resonance beam really work in the batch (-type) vibrational state, and its basic sequential as shown in Figure 3.In foment, circuit output accumulation signal makes the resonance beam starting of oscillation; At detected state, close accumulation signal, resonance beam 2 freedom of entry vibrational states, amplitude is decayed gradually but still can be kept a period of time, and the detection and the amplification of pick-up signal carried out in the testing circuit utilization during this period of time; Treat resonance beam 2 near the failure of oscillation state, circuit is exported accumulation signal once more, makes resonance beam starting of oscillation once more, so repeats.Compare with the detection method based on differential transformer coupling or impedance operator in the prior art, this method has thoroughly solved the coupled interference problem, and does not need the interference isolating device of transformer and so on.
SOI (monocrystalline silicon on the insulator) is the wafer material of " SCS-BOX-substrate " three-decker.In MEMS processing, an important use of BOX layer is exactly " prefabricated " sacrifice layer.SiO
2Good with Si corrosion selectivity, and coefficient of thermal expansion is approaching, thereby SiO
2It is desirable sacrificial layer material.SCS-BOX interface quality height in the SOI wafer utilizes the BOX sacrifice layer can obtain good thickness and precision and surface quality, so the present invention adopts the SOI wafer, and is the space of sacrifice layer processing resonance beam bottom with its BOX.
The present invention's advantage compared with prior art: adopt SOI wafer and wet etching technique, technology is simple; BOX layer with the SOI wafer is the space of sacrifice layer processing resonance beam bottom, and structure precision and surface quality are good; Resonance beam mainly is made of epitaxial loayer, and need not heavy doping, is convenient to control structure stress, is convenient to obtain comparatively ideal epitaxial loayer; Epitaxial loayer is highly doped, and substrate is low-doped, helps eliminating autodoping effect, good manufacturability; Employing batch (-type) principle has realized the decoupling zero between accumulation signal and pick-up signal, and the simple harmonic girder construction that frame for movement and electrical structure are overlapped really obtains practicality.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is exciting of the present invention and pick-up principle schematic;
Fig. 3 is the sequential schematic diagram of batch (-type) principle of the present invention;
Fig. 4 is a basic process steps of the present invention;
Fig. 5 realizes the principle schematic of closed-loop system for the batch (-type) principle;
Fig. 6 is the cross sectional representation of first kind of space arrangement of field generator for magnetic;
Fig. 7 is the cross sectional representation of second kind of space arrangement of field generator for magnetic;
Fig. 8 is the sensitive structure schematic diagram of the resonance type pressure sensor of employing the present invention formation;
Fig. 9 is the sensitive structure schematic diagram of the resonance type accelerometer of employing the present invention formation.
The specific embodiment
As shown in Figure 1, the present invention is by matrix 1 and place the resonance beam 2 of magnetic field B (x) to constitute, matrix 1 is for changing the flexible sheet that strain takes place with measurand, resonance beam 2 two fixed ends are in matrix 1 surface, its intrinsic frequency changes with matrix 1, realizes that the resonant mode of input physical quantity is measured; Matrix 1 and resonance beam 2 adopt the SOI wafer, process with extension and etching technics; Resonance beam 2 two ends have electrode, and and magnetic field
The direction quadrature, produce the Ampere force of thickness direction during by electric current, produce induced voltage at two ends during vibration, adopt the batch (-type) principle to constitute closed-loop system, with thorough solution coupled interference problem.
As shown in Figure 4, the SOI wafer of matrix 1 and resonance beam 2 employings is by monocrystalline silicon layer 13, SiO
2Buried layer 12 and substrate 11 are formed.Shown in Fig. 4 a, SiO
2Buried layer 12 thick 1～2 μ m; Monocrystalline silicon layer 13 is N type (mixing phosphorus), doping content 1 * 10
19～2 * 10
19Cm
-3, thick 4～10 μ m; Substrate 11 is low-doped N type.
Structure of the present invention mainly relies on technologies such as above-mentioned SOI wafer being adopted extension and wet etching and obtains concrete steps following (wherein having omitted general mask graph photo-mask process):
(1) shown in Fig. 4 b, with SiO
2Buried layer 12 for stop the layer monocrystalline silicon layer 13 is carried out etching, obtain second monocrystalline silicon layer 15, be mask with second monocrystalline silicon layer 15, with substrate 11 for stopping layer, to SiO
2Buried layer 12 carries out etching, obtains the 2nd SiO
2Buried layer 14.The 2nd SiO
2Buried layer 14 will be as the sacrifice layer of subsequent technique.
(2) shown in Fig. 4 c, with the 2nd SiO
2Buried layer 14 carries out etching for stopping layer to second monocrystalline silicon layer 15, obtains and following the 3rd corresponding monocrystalline silicon layer 16 of resonance beam.Because Fig. 4 (b) body structure surface exists by the 2nd SiO
2High " I-shaped " boss of 5～12 μ m that the buried layer 14 and second monocrystalline silicon layer 15 constitute has not been complete plane, and for guaranteeing photoetching quality, the deposit polyimides carry out surfacingization, at polyimide surface deposit TEOS, applies photoresist at last afterwards.During etching, according to photoresist → SiO
2The order transition diagram of → polyimides → SCS is removed mask material at last.Answer the error of compensation figure transfer process during layout design, and for avoiding the marginal portion of boss, the 3rd monocrystalline silicon layer 16 of rectangle is than the 2nd SiO of its below
2The counterpart of buried layer 14 slightly shortens.
(3) as Fig. 4 d: at Fig. 4 c body structure surface growth 6～12 μ m doping contents and the first approaching epitaxial loayer 17 of the 3rd monocrystalline silicon layer 16.Because the intrinsic selectivity of epitaxy technique, epitaxial loayer only can be grown in the surface of the 3rd monocrystalline silicon layer 16 and substrate 11 expose portions, so first epitaxial loayer 17 has the H type structure among the figure.Because the intrinsic local effect of epitaxy technique, the thickness of substrate surface epitaxial loayer is greater than the thickness of the 3rd monocrystalline silicon layer 16 surperficial epitaxial loayers, so epitaxy layer thickness should be as the criterion with the former.
(4) shown in Fig. 4 e, at the TEOS of the about 15 μ m of Fig. 4 d body structure surface deposit, fill low recess, carry out chemically mechanical polishing (CMP) then, obtain complete planar surface; Carry out a chemical polishing afterwards again, with further elimination skin stress.The removal amount of chemical polishing should approach (0.5 μ m is following) as far as possible, avoids reducing surface flatness.At this moment, to answer attenuate be that the 4th monocrystalline silicon layer 18, the first epitaxial loayers 17 corresponding attenuates of 1～2 μ m are second epitaxial loayer 19 of 2～4 μ m to the 3rd monocrystalline silicon layer 16.
(5) shown in Fig. 4 f, with the doping content of step (3) at the 4th monocrystalline silicon layer 18 and second epitaxial loayer, 19 surface selectivity growth regulations, three epitaxial loayers 20.The thickness of the thickness decision resonance beam of the 3rd epitaxial loayer 20, for example the 3rd epitaxial loayer that 4 μ m are thick will obtain the thick resonance beam of 6～8 μ m.
(6) shown in Fig. 4 g, the 4th monocrystalline silicon layer 18, second epitaxial loayer 19 and the 3rd epitaxial loayer 20 constitute 1 * 10 at this moment
19～2 * 10
19Cm
-3The monocrystalline silicon overall structure of mixing is referred to as superstructure 21; 21 solid districts of widening by both sides 22 of superstructure form the monocrystalline silicon overall structure with substrate 11.Adopt the HF wet etching to remove all remaining SiO
2, discharging resonance beam 2, resonance beam 2 is made up of the 3rd epitaxial loayer 20 interludes and the 4th monocrystalline silicon layer 18, has 1～2 μ m safe distance, i.e. SiO with the substrate 11 of below
2The thickness of buried layer.
(7) make electrode on 22 surfaces, solid district, finally obtain structure shown in Figure 1.
(8) substrate 11 is processed, made its function, specifically see below the discussion of matrix 1 embodiment with responsive specific physical quantity.
Above-mentioned technology only needs 1～2 extension, and the process conditions of 2 extensions are identical, and adopt wet etching fully, do not need dry etching and electrochemical corrosion, thereby technology are simple, and cost is lower.Utilize the monocrystalline silicon layer and the epitaxial loayer of SOI wafer to constitute resonance beam, doping content is moderate, and does not have foreign material on the monocrystalline silicon overall structure except that electrode, and heat endurance is guaranteed.Because substrate doping is very low, and outer layer doping concentration is higher, helps avoid autodoping effect, good manufacturability.
Choosing of each several part doping content, mainly consider process conditions, insulation/electric conductivity and mechanical performance.Consider that from insulating properties substrate is an optimum with intrinsic monocrystalline silicon, but actual being difficult to accomplishes that be as the criterion so be not less than 50 Ω cm with body resistivity, this moment, the doping content upper limit about 10
14Cm
-3Consider that from electric conductivity the doping content of superstructure should be high as far as possible, but, adopt 1～2 * 10 for the epitaxial layer quality of avoiding lattice mismatch to cause descends and serious internal stress
19Cm
-3Doping content.This moment, lattice mismatch was very little, and body resistivity about 5 * 10
-3Ω cm, length * wide * thick=800 * 80 * 8 μ m
3About 63 Ω of resistance of resonance beam, enough little from the circuit design angle.
Adopt the service intermittent mode to constitute closed-loop system as Fig. 3, Fig. 5 and comprise exciting circuit, resonance beam, testing circuit and control circuit, in foment, control circuit control exciting circuit output accumulation signal makes the resonance beam starting of oscillation; At detected state, control circuit control exciting circuit cuts out accumulation signal, resonance beam 2 freedom of entry vibrational states, amplitude is decayed gradually but still can be kept a period of time, the detection and the amplification of pick-up signal are carried out in the utilization of control circuit control testing circuit during this period of time, treat resonance beam 2 near the failure of oscillation state, and exciting circuit is exported accumulation signal once more, make resonance beam starting of oscillation once more, so repeat.
Exciting circuit adopts the signal generating circuit based on Direct Digital synthetic (DDS) or voltage controlled oscillator (VCO), testing circuit comprises links such as low-noise amplifier and noise filter, and control circuit comprises A/D, D/A and microcontroller (MCU) or digital signal processor parts such as (DSP), but the different application occasion may be made very various specific design, those skilled in the art are easy to realize, will not describe in detail here.
For the generating means of the magnetic field B among the present invention (x),, two kinds of typical embodiment are arranged from the angle of space arrangement.But no matter adopt any space arrangement, the magnetic line of force that all requires to pass beam is similar to parallel with the y axle.
(1) two block of small-sized magnet 23 is arranged in the position of very close resonance beam 2 on the micro mechanical device, and heteropole is relative, and opposing magnetic pole connects (not drawing among the figure) with magnetic conductor, as shown in Figure 6.The magnet of this mode and magnetic conductor are all less, help reducing the volume and weight of whole micro mechanical device; The magnetic circuit scope is little, and magnetic strength leaks little; But difficulty is installed in processing.
(2) two blocks of large-scale magnet 24 are arranged in the both sides of whole micro mechanical device, and heteropole is relative, and opposing magnetic pole connects (not drawing among the figure) with magnetic conductor, as shown in Figure 7.The magnet of this mode and the volume and weight of magnetic conductor are all bigger; The magnetic circuit scope is big, and magnetic strength leaks also bigger; Other parts of sensor also may be in the magnetic field, if these parts then may have a negative impact to magnetic-field-sensitive; But the processing of this structure is installed easily, as long as take suitable magnetic screen measure, still is worth attempting in a lot of concrete occasions.
Structure of the present invention can be used for measuring multiple physical quantity.By matrix 1 structure is designed, make it to specific physical quantity sensitivity, produce corresponding deformation with this physical quantity, and produce corresponding tension force at resonance beam 2 two ends, just can constitute the sensor (sensitive structure) that detects this physical quantity.Below be two kinds of exemplary embodiment.
Make matrix 1 responsive distribution pressure, can constitute the presser sensor structure, as shown in Figure 8.Adopt anisotropic etching at substrate 11 back sides processing deep trouth, the thick portion around the deep trouth becomes isolated area, and the deep trouth bottom thin film becomes flexible sheet 4; Isolated area 33 and the airtight bonding in glass base 34 4 limits; Vacuum orifice 31 by level Hermetic Package 32 is extracted inner air out, seals vacuum orifice 31 afterwards, can realize vacuum in inside, effectively improves the quality factor of resonance beam 2; Deflection takes place in flexible sheet 4 under well-distributed pressure 36 effects, make two solid ends of beam that relative displacement take place, the resonant frequency (displacement → axial tensile force → axial stress → rigidity → resonant frequency) of control beam, thus set up corresponding relation in resonant frequency and between by measuring pressure.One group of canonical parameter is: range 0～350kPa, elastic membrane length of a film * wide * thick=2 * 2 * 0.2mm
3, resonance beam length * wide * thick=800 * 80 * 8 μ m
3
Matrix 1 to above-mentioned pressure sensor is made an amendment slightly, the back side utilizes bonding technology quality of connection piece 37, is m together with flexible sheet 4 equivalent mass own, makes flexible sheet 4 experience the concentrated force F=ma that acceleration a produces, can constitute the acceleration sensitive structure, as Fig. 9.This moment do not have airtight problem, so diaphragm only combine with base on the both sides on the beam length direction, with the raising sensitivity.
Claims (5)
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101964272B (en) * | 2010-07-22 | 2012-09-26 | 张谦 | Pressure switch based on micro-electromechanical system technology |
| CN103212531A (en) * | 2013-04-12 | 2013-07-24 | 吕颖智 | Diaphragm electromagneticvibration exciter |
| CN103630274B (en) * | 2013-12-06 | 2015-08-26 | 西安交通大学 | A kind of flexure electric-type micropressure sensor based on MEMS (micro electro mechanical system) |
| CN104614099B (en) * | 2015-02-03 | 2018-01-26 | 中国工程物理研究院电子工程研究所 | Micro pressure sensor with FBAR structure on diaphragm |
| CN107656094A (en) * | 2016-07-26 | 2018-02-02 | 中国航空工业集团公司西安飞行自动控制研究所 | A kind of highly doped silicon micro-resonance type accelerometer |
| CN106918420B (en) * | 2017-04-21 | 2019-07-19 | 北京航空航天大学 | A double graphene resonant beam pressure sensor |
| CN107817045B (en) * | 2017-11-28 | 2023-06-23 | 吉林大学 | A magnetic coupling resonance type frequency detection device and frequency detection method |
| CN109987570B (en) * | 2019-03-29 | 2022-11-25 | 中国计量大学 | Thermoelectric converter structure and manufacturing method based on electromagnetically excited single crystal silicon resonant beam |
| CN110438992B (en) * | 2019-07-30 | 2021-08-27 | 浙江科技学院 | Vibration pile sinking method for reducing vibration influence based on solid-liquid state conversion deformation bag |
| CN115790913B (en) * | 2023-02-08 | 2023-06-13 | 成都凯天电子股份有限公司 | Silicon resonance pressure sensor with high dynamic measurement accuracy |
| CN119349501A (en) * | 2024-10-30 | 2025-01-24 | 北京时代航芯科技有限公司 | A method for manufacturing a resonant beam pressure sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6445053B1 (en) * | 2000-07-28 | 2002-09-03 | Abbott Laboratories | Micro-machined absolute pressure sensor |
| CN1475771A (en) * | 2003-07-05 | 2004-02-18 | 中国科学院合肥智能机械研究所 | A silicon micromachined inclination sensor and its manufacturing method |
| CN1485599A (en) * | 2002-09-26 | 2004-03-31 | 中国科学院电子学研究所 | Beam-membrane integrated structure resonant beam pressure sensor chip and manufacturing method |
| CN1580786A (en) * | 2003-08-05 | 2005-02-16 | 北京大学 | High-sensitivity resonance acceleration meter chip |
-
2006
- 2006-11-03 CN CN2006101142749A patent/CN1944235B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6445053B1 (en) * | 2000-07-28 | 2002-09-03 | Abbott Laboratories | Micro-machined absolute pressure sensor |
| CN1485599A (en) * | 2002-09-26 | 2004-03-31 | 中国科学院电子学研究所 | Beam-membrane integrated structure resonant beam pressure sensor chip and manufacturing method |
| CN1475771A (en) * | 2003-07-05 | 2004-02-18 | 中国科学院合肥智能机械研究所 | A silicon micromachined inclination sensor and its manufacturing method |
| CN1580786A (en) * | 2003-08-05 | 2005-02-16 | 北京大学 | High-sensitivity resonance acceleration meter chip |
Non-Patent Citations (2)
| Title |
|---|
| 樊尚春等.热激励谐振式硅微结构压力传感器.航空学报21 5.2000,21(5),474-476. |
| 樊尚春等.热激励谐振式硅微结构压力传感器.航空学报21 5.2000,21(5),474-476. * |
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