CN1828848A - Manufacturing method of silicon nitride film - Google Patents
Manufacturing method of silicon nitride film Download PDFInfo
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- CN1828848A CN1828848A CN 200510051754 CN200510051754A CN1828848A CN 1828848 A CN1828848 A CN 1828848A CN 200510051754 CN200510051754 CN 200510051754 CN 200510051754 A CN200510051754 A CN 200510051754A CN 1828848 A CN1828848 A CN 1828848A
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Abstract
一种氮化硅膜的制造方法，此方法适用于基底，且于基底上至少形成有一晶体管元件，而此方法包括下列步骤。首先，于晶体管元件上形成自行对准金属硅化物膜。接着，于基底上形成氮化硅膜。之后，对氮化硅膜进行热处理工艺。其中，此热处理工艺的工艺温度低于摄氏450度，且此热处理工艺是在惰性气体环境中进行。因此，藉由本发明的氮化硅膜的制造方法，能够以低热预算工艺制造出高拉伸应力的氮化硅膜，从而能够在不影响金属硅化物的热稳定性的情况下，增进晶体管元件的通道内的电子移动率。
A method for manufacturing a silicon nitride film, which is applicable to a substrate, and at least one transistor element is formed on the substrate, and the method includes the following steps. First, a self-aligned metal silicide film is formed on the transistor element. Then, a silicon nitride film is formed on the substrate. Thereafter, a heat treatment process is performed on the silicon nitride film. The process temperature of the heat treatment process is lower than 450 degrees Celsius, and the heat treatment process is performed in an inert gas environment. Therefore, by the method for manufacturing a silicon nitride film of the present invention, a silicon nitride film with high tensile stress can be manufactured by a low thermal budget process, thereby being able to increase the electron mobility in the channel of the transistor element without affecting the thermal stability of the metal silicide.
Description
Technical field
The present invention relates to a kind of semiconductor technology, particularly relate to the manufacture method of the silicon nitride film of a kind of high tensile stress (tensile stress).
Background technology
Metal-oxide semiconductor transistor (Metal-Oxide-Semiconductor Transistor; MOS) it is very little to clip its power consumption, and is fit to plurality of advantages such as highdensity integrated manufacturing, real in the semiconductor technology now, most important and most widely used a kind of basic electronic component.Along with the lifting of semi-conductive integrated level (Integration), the transistorized size of metal-oxide semiconductor is also dwindled thereupon.Yet the dimension reduction of MOS has its limit, therefore, how to utilize other method, for example is in being studied widely with the method for improving carrier mobility (carrier mobility) by the strain (strain) of promoting transistor channels.
For PMOS, by using selective epitaxial growth layer process, imbedding one deck at source/drain regions has the germanium silicide of compression strain power (SiGe) film, to promote the hole mobility of its passage usually.Simultaneously, for NMOS, also there is the strain of a lot of change passage to be suggested with the method for improving the electronics mobility.And the focus of these methods all concentrates on the stress of revising its relevant rete (for example polysilicon layer, metal silicide film, silicon nitride cap layer and inner layer dielectric layer etc.), to promote the strain of its passage.And after the metal silicide film deposition, the silicon nitride film that square thereon covering one deck has tensile stress is well known a kind of method with the elongation strain that increases the NMOS passage, and the degree that the electronics mobility on the NMOS increases is directly proportional with the strain of silicon nitride film.In addition, because the restriction of the thickness of silicon nitride film, so the stress of silicon nitride film is with the degree of the increase of the electronics mobility on the may command NMOS.
Known, traditional high tensile stress silicon nitride is in hot boiler tube equipment, to be higher than Low Pressure Chemical Vapor Deposition (Low Pressure Chemical Vapor Deposition, the LPCVD) manufacturing of 600 degree Celsius.Yet because so high temperature can have influence on the thermal stability of metal silicide film, therefore, above-mentioned method also is not suitable for and produces the silicon nitride cap layer that covers metal silicide film.
In recent years, a kind of new method of making silicon nitride film be to use two (spy-butyl amino) silane (BTBAS), chlordene silane (HCD) etc. new drive matter, and can under the environment of lower temperature, form silicon nitride film with the LPCVD method.Yet the technological temperature of above-mentioned silicon nitride film is usually above 450 degree Celsius, and this technological temperature is still too high for nickel (Ni) silicide.Therefore can have influence on the thermal stability of metal silicide film, thereby cause the rising of the resistance value of metal silicide film.
Summary of the invention
In view of this, purpose of the present invention is exactly that a kind of manufacture method of silicon nitride film is being provided, and can produce the silicon nitride film of high tensile stress with the technology of low heat budget.
Another object of the present invention is exactly that a kind of manufacture method of silicon nitride film is being provided, and can make silicon nitride film with the method low-cost, that technology is simple and productive rate is high.
Based on above-mentioned and other purpose, the present invention proposes the manufacture method of silicon nitride film, and the method is applicable to substrate, and is formed with a transistor unit at least in substrate, and the method comprises the following steps.At first, metal silicide film is aimed in formation voluntarily on transistor unit.Then, in substrate, form silicon nitride film, and silicon nitride film is heat-treated technology (thermal treatment process).Wherein, the technological temperature of above-mentioned Technology for Heating Processing is lower than between 450 degree Celsius, and this Technology for Heating Processing is to carry out in inert gas environment.
Described according to the preferred embodiments of the present invention, in the manufacture method of above-mentioned silicon nitride film, this Technology for Heating Processing for example is hot boiler tube method, and carries out in vacuum state or atmospheric pressure state.In addition, the method that in substrate, forms silicon nitride film for example be carry out the plasma enhanced chemical vapor deposition method (PlasmaEnhance Chemical Vapor Deposition, PECVD).Wherein, the employed reacting gas of this plasma enhanced chemical vapor deposition method for example is silane (SiH
4) and ammonia (NH
3), and its technological temperature is less than about 400 degree Celsius.
The present invention proposes the manufacture method of another kind of silicon nitride film, and the method comprises the following steps.One substrate at first is provided, then in substrate, form silicon nitride film and then silicon nitride film is heat-treated technology, wherein between 1100 degree, and this Technology for Heating Processing is to carry out in an inert gas environment to the technological temperature of this Technology for Heating Processing between 400 degree Celsius.
Described according to the preferred embodiments of the present invention, in the manufacture method of above-mentioned silicon nitride film, the technological temperature of its Technology for Heating Processing can be Celsius 400 the degree to 600 the degree between, Celsius 600 the degree to 800 the degree between or Celsius 800 the degree to 1100 the degree between.Wherein, this Technology for Heating Processing for example is hot boiler tube method, and carries out in vacuum state or atmospheric pressure state.In addition, the method for formation silicon nitride film for example is to carry out the plasma enhanced chemical vapor deposition method in substrate.Wherein, the employed reacting gas of this plasma enhanced chemical vapor deposition method for example is silane and ammonia, and its technological temperature is less than about 400 degree Celsius.
Because the manufacture method of silicon nitride film of the present invention can produce the silicon nitride film of high tensile stress with the technology of low heat budget, therefore can under the situation of the thermal stability that does not influence metal silicide film, have heavily stressed silicon nitride film with the electronics mobility in the passage of promoting transistor unit by producing.
In addition, because the manufacture method of silicon nitride film of the present invention need not used special reacting gas and process equipment, therefore has the low and advantage of simple technology of cost.
In addition,, compare, have the high advantage of productive rate with having in hot boiler tube the method that forms silicon nitride film with LPCVD now because the present invention adopts PECVD to form the Technology for Heating Processing that silicon nitride film is added the short time.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. is described in detail below.
Description of drawings
Figure 1A and Figure 1B illustrate the manufacturing process generalized section according to a kind of silicon nitride film of the preferred embodiments of the present invention.
Fig. 2 illustrates and is the stress of the silicon nitride film variation relation figure with the temperature change of thermal process.
Fig. 3 illustrates and is the STRESS VARIATION column diagram through the silicon nitride film after the heat treatment of 400 degree.
Fig. 4 illustrates the schematic diagram into the manufacture method of the silicon nitride film of another preferred embodiment of the present invention.
The simple symbol explanation
100,400: substrate
102: grid
104: gate oxide
106: light doped region
108a, 108b: source/drain regions
110: clearance wall
112: metal silicide film
114: isolation structure
116,410: silicon nitride film
200,210: stress changing curve
300a, 300b, 310a, 310b, 320a, 320b: stress value
Embodiment
Figure 1A and Figure 1B illustrate the manufacturing process generalized section according to a kind of silicon nitride film of the preferred embodiments of the present invention.At first, please one substrate 100 be provided, and use general semiconductor technology in substrate 100, to be formed with a transistor unit at least earlier with reference to Figure 1A, and 114 isolation of use component isolation structure.Wherein, this transistor unit for example comprises grid 102, gate oxide 104, light doped region 106, source/ drain regions 108a, 108b and clearance wall 110.
Afterwards, please continue with reference to Figure 1A, grid 102 in above-mentioned transistor unit, source/drain regions 108a, metal silicide film (self-aligned silicide is aimed in the last formation of 108b voluntarily, salicide) 112, and general metal silicide commonly used for example comprises titanium silicide, tungsten silicide, cobalt silicide, nickle silicide, molybdenum silicide, platinum silicide etc., and the method for its formation for example is earlier desire to be formed the deposit metal films of metal silicide in substrate, then via tempering process so that with source/drain regions 108a, the metallic film reaction that 108b contacts with grid 102 forms metal silicide, removes the unreacted metal film afterwards again.
Continue it, please refer to Figure 1B, in substrate 100, form silicon nitride film 116, and the method that forms this silicon nitride film 116 for example is the plasma enhanced chemical vapor deposition method of carrying out, and its employed reacting gas for example is silane and ammonia or other suitable material.Wherein, the technological temperature of this plasma enhanced chemical vapor deposition method is preferably and is lower than 400 degree Celsius.In a preferred embodiment, the technological temperature of above-mentioned plasma enhanced chemical vapor deposition method for example is 350 degree Celsius, and operation pressure is 2.6 holders, and the gas flow of silane is 500sccm, and the gas flow of ammonia is 4000sccm.
Then, this silicon nitride film 116 is heat-treated technology, to promote the tensile stress of silicon nitride film 116, wherein this Technology for Heating Processing for example is to use hot boiler tube and carries out in the environment of inert gas, and the operation pressure of this Technology for Heating Processing can be vacuum state or atmospheric pressure state.It should be noted that herein that for fear of the thermal stability of destroying metal silicide film 112 technological temperature of above-mentioned Technology for Heating Processing is preferably and is lower than 450 degree Celsius.After the above-mentioned Technology for Heating Processing of process, because Si-H in silicon nitride film and the bond intensity of N-H can be weakened, thereby make hydrogen atom by being released in the silicon nitride film, that is be, can access silicon nitride film with preferred stress by the hydrogen content that reduces in the silicon nitride film.In a preferred embodiment, the technological temperature of above-mentioned Technology for Heating Processing is 400 degree Celsius, and operation pressure is 0.7 holder, be 100sccm as the gas flow of the nitrogen of inert gas, and the carrying out of the Technology for Heating Processing time is 10 minutes.
Fig. 2 illustrates and is the stress of the silicon nitride film variation relation figure with the temperature change of Technology for Heating Processing.Please refer to Fig. 2, in Fig. 2, show the silicon nitride film (PE-SiN) that manufactures with PECVD after, its stress value and temperature rising curve 200 and temperature decline curve 210 corresponding variation situations through a thermal cycle (Technology for Heating Processing) that is warming up to 400 degree Celsius and the cooling of rising again.As shown in Figure 2, raising along with technological temperature, the stress value of silicon nitride film also increases thereupon, though after the step that enters the cooling of rising again, the stress value of silicon nitride film can be along with decrease of temperature descends thereupon slightly, still, and by the stress value of the stress value of the silicon nitride film at intensification starting point place and the silicon nitride film of the destination county of rising again as can be known, after silicon nitride film was heat-treated technology, the stress value of silicon nitride film had the lifting of certain degree really.
Fig. 3 illustrates and is the STRESS VARIATION column diagram through the silicon nitride film after the heat treatment of 400 degree Celsius.Please refer to Fig. 3, the stress changing relation figure that the silicon nitride film of three kinds of different stress is arranged in Fig. 3, be respectively the stress value 300a of high tensile stress silicon nitride, the stress value 310a of low tensile stress silicon nitride and the stress value 320a of compression (compressive) stress silicon nitride film, wherein 300a, 310a, 320a are meant that all the deposition back is without the measured stress value of the silicon nitride film of Technology for Heating Processing.Yet, after through 400 degree Technologies for Heating Processing Celsius, 300b, 310b, 320b be as can be known as a result by the stress value that is presented, for the silicon nitride film of tool tensile stress, Technology for Heating Processing is only the committed step of the tensile stress size of decision silicon nitride film, no matter that is be high tensile stress silicon nitride and low tensile stress silicon nitride tensile stress difference in initial condition, through after the above-mentioned Technology for Heating Processing, its tensile stress all can upwards promote and be promoted to close numerical value.
In above preferred embodiment, owing to consider the harmful effect of high temperature to metal silicide film, therefore the technological temperature of Technology for Heating Processing is preferably limited to below 450 degree Celsius, yet the present invention is not limited thereto, so long as in semiconductor technology, need to form the silicon nitride film of high tensile stress, can utilize the manufacture method of silicon nitride film of the present invention.
Fig. 4 illustrates the schematic diagram into the manufacture method of the silicon nitride film of another preferred embodiment of the present invention.Please refer to Fig. 4, at first, provide a substrate 400, wherein be formed with semiconductor element (not icon) in this substrate 400, the wherein not special restriction of this semiconductor element for example can be transistor unit or metal interconnecting.
Then, form silicon nitride film 410 in substrate 400, the method that wherein forms this silicon nitride film 410 for example is the plasma enhanced chemical vapor deposition method of carrying out, and its employed reacting gas for example is silane and ammonia or other suitable material.
Then, this silicon nitride film 410 is heat-treated technology, to promote the tensile stress of silicon nitride film 410, wherein this Technology for Heating Processing for example is to use hot boiler tube and carries out in the environment of inert gas, and the operation pressure of this Technology for Heating Processing can be vacuum state or atmospheric pressure state.The technological temperature of the Technology for Heating Processing of present embodiment is spent between 1100 degree between Celsius 400, and in response to different membrance casting conditions, the technological temperature of above-mentioned Technology for Heating Processing for example be can between Celsius 400 spend to 600 the degree between, Celsius 600 spend to 800 the degree between or between Celsius 800 spend to 1100 the degree between.
In sum, because the present invention forms the top cover silicon nitride film that is covered on the metal silicide film by the plasma enhanced chemical vapor deposition method of using low temperature, then use the Technology for Heating Processing of low temperature to promote the tensile stress of silicon nitride film, therefore can produce silicon nitride film with the technology of low heat budget with high tensile stress, and then can under the situation of the thermal stability that does not influence metal silicide film, promote the electronics mobility of the passage of transistor unit by the tensile stress that promotes silicon nitride film.
In addition, because it is silane and the ammonia that traditional handicraft is habitually practised that the present invention forms the reacting gas of silicon nitride film, and silicon nitride film depositing operation and Technology for Heating Processing are to use general machine, and therefore the manufacture method of silicon nitride film of the present invention has the low and advantage of simple technology of cost.
Moreover, because the present invention adopts PECVD to form after the silicon nitride film, the Technology for Heating Processing of carrying out the short time again to be promoting the tensile stress of silicon nitride film, compares with having in hot boiler tube the method that forms silicon nitride film with LPCVD now, and method of the present invention has the high advantage of productive rate.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (15)
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100552904C (en) * | 2006-09-19 | 2009-10-21 | 台湾积体电路制造股份有限公司 | Semiconductor structure and forming method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100552904C (en) * | 2006-09-19 | 2009-10-21 | 台湾积体电路制造股份有限公司 | Semiconductor structure and forming method thereof |
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