CN1888523A - Ultra bright semiconductor white light source - Google Patents
Ultra bright semiconductor white light source Download PDFInfo
- Publication number
- CN1888523A CN1888523A CNA2006100129893A CN200610012989A CN1888523A CN 1888523 A CN1888523 A CN 1888523A CN A2006100129893 A CNA2006100129893 A CN A2006100129893A CN 200610012989 A CN200610012989 A CN 200610012989A CN 1888523 A CN1888523 A CN 1888523A
- Authority
- CN
- China
- Prior art keywords
- led chip
- spherical
- light source
- luminous
- drive circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000003822 epoxy resin Substances 0.000 claims abstract description 11
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 11
- 238000004020 luminiscence type Methods 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000002223 garnet Substances 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 6
- 229920005479 Lucite® Polymers 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 abstract description 2
- 229920003023 plastic Polymers 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 238000005286 illumination Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000007850 degeneration Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Images
Landscapes
- Led Device Packages (AREA)
Abstract
A superbright radio white light source consists of a spherical crown luminous sealed body, a LED chip drive circuit and wires. In the spherical crown transparent epoxy resin are sealed several luminous units in parallel connection sleeved transparent wires of transparent plastic tube, and bound with the silvered smooth convex surface of the spherical crown metal reflector having cooling function to form the spherical crown luminous sealed body. The number of the luminous units and the power of the LED chip drive circuit are determined by the power the light source needs.
Description
Technical field
The present invention relates to a kind of semiconductor light sources, it belongs to illumination property light source, is used for indoor and outdoor lighting.
Background technology
Semiconductor light-emitting-diode (LED), be a kind of cold light source device that can directly electric energy be converted into visible light and radiant energy, have that operating voltage is low, power consumption is little, luminous efficiency is high, extremely weak point, shock resistance, vibration resistance, stable and reliable for performance, photochromic pure, nontoxic, harmless a, advantage such as volume is little of response time.
In recent years, along with people's deepening continuously to semiconductive luminescent materials research, the development and application of the continuous progress of LED manufacturing process and new material (element nitride crystal and fluorescent material), versicolor ultra-high brightness LED has been obtained breakthrough, its luminous efficiency has improved nearly 1000 times, the colourity aspect has realized all colours of visible light wave range, wherein the most important thing is the appearance of super brightness white light LEDs, and making the LED application be across to high efficiency illumination light source market becomes possibility.Once the someone pointed out, high-brightness LED will be the mankind behind Edison's invention incandescent lamp bulb, one of greatest invention.
For a long time, because the LED light efficiency is low, it uses the fields such as various demonstrations, indicator lamp, signal lamp, display screen, Landscape Lighting that mainly concentrate on.Existing LED lighting source mainly adopts the LED connection in series-parallel of many low luminous efficiencies to form, and is mainly used in the Landscape Lighting field, and has the technical problem underlying of following three aspects:
The one, luminous flux is low, can not satisfy the needs of illumination;
The 2nd, adopt the plurality of LEDs connection in series-parallel, complex circuit and cost are higher;
The 3rd, the LED heat radiation is bad, greatly reduces service life.
Summary of the invention
The objective of the invention is a kind of ultra bright semiconductor white illumination light source of designing at above-mentioned phenomenon.The present invention is achieved in that directly and makes illuminator with led chip, admittedly seal into spherical with transparent epoxy resin, and evenly smear a yttrium aluminium garnet fluorescent powder coating in this epoxy skins, constitute luminescence unit, luminescence unit is enclosed in another spherical transparent epoxy resin admittedly with the transparent lead that is with lucite pipe, and bond together with the silver-plated smooth convex surface of a spherical metal reflective body, form a spherical luminous body that seals admittedly.Led chip positive pole (non-light-emitting area) directly is welded on the silver-plated convex surface of spherical metal reflective body, and this spherical metal reflective body is except that having reflection action, or the tie point of circuit, and has heat sinking function.Led chip negative pole (light-emitting area), link together by the transparent lead that is with lucite pipe, and link to each other by the negative pole of a lead that passes prefabricated via hole on the spherical metal reflective body with the output of led chip drive circuit, be with opaque insulating sleeve between this lead and the via hole.The positive pole of led chip drive circuit output links to each other with metal reflective body concave surface by another root lead.
The present invention adopts led chip to make luminescence unit, and it is very little that the luminescence unit spacing can be done, simple in structure, and cost is lower; Led chip and yttrium aluminium garnet fluorescent powder are isolated, and have avoided the degeneration of fluorescent material, adopt spherical metal reflective body simultaneously, when solving the chip cooling problem, have improved luminous efficiency.Can be made into LED bulb replace incandescent, be used for indoor and outdoor lighting.
Description of drawings
Fig. 1 is the generalized section of ultra bright semiconductor white light source of the present invention.
Among the figure, 1 refractive body, 2LED chip, 3,5 epoxy resin layers, 4 fluorescent coatings, 6,10 leads, 7 fixing holes, 8 refractive body conducting surfaces, 9LED chip drive circuit, 11 refractive body concave surfaces.
The specific embodiment
As shown in Figure 1, led chip 2 usefulness transparent epoxy resins 3 seal into spherical admittedly, and evenly smear a yttrium aluminium garnet fluorescent powder coating 4 on transparent epoxy resin 3 top layers, constitute luminescence unit; Luminescence unit that N is connected in parallel and the transparent lead 6 that is with lucite pipe are enclosed in the spherical transparent epoxy layer 5 admittedly, and bond together with the silver-plated smooth convex surface 8 of spherical metal reflective body 1, form a spherical luminous body that seals admittedly; Led chip 2 positive poles are non-light-emitting area, directly are welded on the silver-plated smooth convex surface 8 of spherical metal reflective body 1 this spherical metal reflective body 1 double fin of doing led chip 3, or the electric connecting point of circuit; The led chip negative pole is a light-emitting area, link together by the transparent lead 6 that is with lucite pipe, and link to each other by the negative pole of a lead that passes prefabricated fixing hole 7 on the refractive body with the output of led chip drive circuit, be with opaque gum sleeve between this lead and the fixing hole 7, the positive pole of led chip drive circuit output links to each other with metal reflective body concave surface 11 by another root lead; Can luminously seal body admittedly and the led chip drive circuit is fixed in the Lamp cup with spherical by fixing hole 7, constitute the LED bulb with lamp socket, lampshade.
The power output of the number of luminescence unit and led chip drive circuit is decided according to the power output of light source; As luminous power 6W, each luminescence unit power is 0.06W, then should seal 100 luminescence units admittedly; Add 220VAC voltage for led chip drive circuit input, it is output as 2 to 5VDC, powers the led chip blue light-emitting to led chip by lead; Blue-light excited yttrium aluminium garnet fluorescent powder produces gold-tinted, with blue light, forms white light; White light can fully excite yttrium aluminium garnet fluorescent powder coating 5 by the repeatedly reflection of the silver-plated smooth convex surface 6 of spherical transparent epoxy resin 6 top layers and spherical metal reflective body 2, reduces the blue light ingredient in the white light, and improves luminous efficiency; In addition, because led chip 3 is isolated with yttrium aluminium garnet fluorescent powder coating 5 usefulness transparent epoxy resins 4, the luminous efficiency of having avoided the fluorescent material degeneration to cause reduces and glow color changes problem; The led chip positive pole directly is welded on the silver-plated smooth convex surface 6 of spherical metal reflective body 2, and the heat that led chip produces can leave rapidly, has improved the service life of led chip.
If adopt the led chip and the corresponding with it fluorescent material of different colours, can form the LED lighting source of different colours.Equally, if on led chip drive circuit outlet line, connect an adjustable potentiometer, then can make the LED lamp of adjustable brightness.
Claims (1)
1, ultra bright semiconductor white light source, by led chip and led chip drive circuit, lead is formed, it is characterized in that said led chip (2) makes illuminator, admittedly seal into spherical with transparent epoxy resin (3), and evenly smear a yttrium aluminium garnet fluorescent powder coating (4) on this epoxy resin (3) top layer, constitute luminescence unit, luminescence unit is enclosed in another spherical transparent epoxy resin (5) admittedly with the transparent lead (6) that is with lucite pipe, and bond together with the silver-plated smooth convex surface (8) of a spherical metal reflective body (1), form a spherical luminous body that seals admittedly, the positive pole of led chip (2) directly is welded on the spherical luminous silver-plated smooth convex surface of spherical metal reflective body that seals admittedly in the body, and the positive pole of led chip drive circuit (9) output links to each other with metal reflective body concave surface (11) by a lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100129893A CN1888523A (en) | 2006-07-27 | 2006-07-27 | Ultra bright semiconductor white light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100129893A CN1888523A (en) | 2006-07-27 | 2006-07-27 | Ultra bright semiconductor white light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1888523A true CN1888523A (en) | 2007-01-03 |
Family
ID=37577810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006100129893A Pending CN1888523A (en) | 2006-07-27 | 2006-07-27 | Ultra bright semiconductor white light source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1888523A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101900264A (en) * | 2010-03-11 | 2010-12-01 | 陕西科技大学 | A high heat dissipation type high power LED integrated package lamp |
| CN102790160A (en) * | 2011-05-16 | 2012-11-21 | 隆达电子股份有限公司 | Wire bonding structure |
-
2006
- 2006-07-27 CN CNA2006100129893A patent/CN1888523A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101900264A (en) * | 2010-03-11 | 2010-12-01 | 陕西科技大学 | A high heat dissipation type high power LED integrated package lamp |
| CN102790160A (en) * | 2011-05-16 | 2012-11-21 | 隆达电子股份有限公司 | Wire bonding structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101315177A (en) | Novel high-power LED bulb | |
| CN103090240B (en) | A kind of high-efficiency luminescence LED and adopt the LED of this light source | |
| CN201259112Y (en) | High power LED lamp strip and lamp bank and lamp house composed of same | |
| CN1416171A (en) | Illuminator capable of changing color freely | |
| CN106907582A (en) | A kind of full-spectrum LED illuminating lamp | |
| CN201081193Y (en) | Compact power-saving electronic lamp | |
| CN205137089U (en) | Can alternate LED filament and filament lamp of luminous direction at will | |
| CN204088313U (en) | A kind of strip omnidirectional luminous LED lamp silk | |
| CN201100556Y (en) | A LED road lamp for mixing white light with red, green and blue LED | |
| CN1888523A (en) | Ultra bright semiconductor white light source | |
| CN201351834Y (en) | LED down lamp | |
| CN201093369Y (en) | LED light source packaging to curved surface | |
| CN1787243A (en) | LED device and packing method thereof | |
| CN2679856Y (en) | Large power LED element | |
| CN206738970U (en) | A kind of LED light source prepared based on flexible LED filament | |
| CN1873292A (en) | Semiconductor light source | |
| CN204592972U (en) | LED bulb and LED silk | |
| CN2867080Y (en) | Spherical LED lamp | |
| CN2736638Y (en) | Water-proof LED decorative lamp | |
| CN201475710U (en) | Energy-saving LED bulb | |
| CN201706256U (en) | High-power light emitting diode (LED) fluorescent lamp | |
| CN2600921Y (en) | Power type light-emitting diode | |
| CN2739914Y (en) | Superhigh brightness LED booster driving device | |
| CN202302811U (en) | LED (light-emitting diode) surface light source based on COB (Chip On Board) packaging structure | |
| CN204300823U (en) | A kind of LEDbulb lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |