CN1884068A - Reducing furnace for producing polysilicon - Google Patents
Reducing furnace for producing polysilicon Download PDFInfo
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- CN1884068A CN1884068A CN 200510077714 CN200510077714A CN1884068A CN 1884068 A CN1884068 A CN 1884068A CN 200510077714 CN200510077714 CN 200510077714 CN 200510077714 A CN200510077714 A CN 200510077714A CN 1884068 A CN1884068 A CN 1884068A
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- stone mill
- heating element
- pipe
- polysilicon
- reduction furnace
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 71
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000004575 stone Substances 0.000 claims description 68
- 238000010438 heat treatment Methods 0.000 claims description 51
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 229910001220 stainless steel Inorganic materials 0.000 claims description 18
- 239000010935 stainless steel Substances 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 17
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013070 direct material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The invention discloses a reducing furnace of large-diameter polysilicon, which is characterized by the following: adopting double-layer case with inner case made of quartz glass; setting heater between inner and outer cases; setting insulating board on the top of inner case and external of heater separately; grinding heater sealed in the quartz pipe; improving product quality and reducing cost effectively.
Description
Technical field
The present invention relates to a kind of device that polysilicon is used of producing, specifically, relate to a kind of reduction furnace that can production major diameter polysilicon.
Background technology
Polysilicon is the direct material of manufacture order crystal silicon, is the base mateiral of semiconducter device such as contemporary artificial intelligence, control automatically, information processing, opto-electronic conversion.Now, the world semiconductor industrial development is swift and violent, and along with the extensive application of super large Regulations vlsi die, world's polysilicon demand year increment reaches about 25%.High purity, high-quality polysilicon are the important source material of producing semiconducter device and unicircuit.
Produce the polysilicon method have multiple, but modal be hydrogen reduction method.This method is that purify good silicon halogenide (silicon tetrachloride or trichlorosilane) and the good hydrogen of purification are fed reduction furnace as raw material, and in hot environment, silicon halogenide and hydrogen generation chemical reaction generate polysilicon, and be deposited on the heating element.Chemical reaction is proceeded, the polysilicon that is deposited on the heating element is more and more, little by little heating element is all covered, and has become the rhoptry that an appearance is wrapped in polysilicon, is commonly called as silicon rod.Chemical reaction is proceeded again, and polysilicon also can continue to be deposited on the silicon rod, makes silicon rod chap gradually, has become a silicon rod based on polysilicon at last.
Above-mentioned chemical reaction carries out in reduction furnace, and reduction furnace is to produce the indispensable device of polysilicon.
The throughput of reduction furnace is relevant with the surface-area of heating element in the reduction furnace.The surface-area of heating element is big, and it and reactant contact surface are just big, and sedimentary polysilicon is just many, so throughput is just big, output is just high; Otherwise surface-area is little, and output is just low.
At present, the heating element in the general reduction furnace is all made with materials such as molybdenum filament, molybdenum pipe or silicon cores.When the physical properties of these materials, particularly conduction property determined them as heating element, its cross section can not be too big.The cross section is little, and diameter will be little, the molybdenum filament of entity especially, and its diameter is littler, generally has only the 3-5 millimeter.Diameter is little, and surface-area is just little, and as heating element, it and reactant contact surface are just little, so throughput is just low.Heating element total length in the general reduction furnace when the molybdenum filament that uses 5 millimeters of diameters during as heating element, during beginning, per hour only can be produced 20 and restrain about 6 meters.Be exactly to the later stage, when the silicon rod diameter reached 50 millimeters, its throughput also had only per hour 170 grams.When the silicon rod diameter of general reduction furnace reached 50 millimeters, just near equipment at full capacity, the silicon rod diameter of therefore general reduction furnace was not too large, mostly all in 50 millimeter in electricity consumption.
We know that polysilicon is a kind of high purity material, is commonly called as HIGH-PURITY SILICON.It is just amazing at last that common metal purity reaches five " 9 ", also is nowhere near concerning polysilicon, and the used polysilicon of electronic industry must be that eight " 9 " arrive the ten nines.That is to say in 1,000,000,000 to 10,000,000,000 Siliciumatoms, an impurity atoms is only arranged.Hence one can see that, and the production of polysilicon must be carried out in the clean environment airtight.In the past, think that always stainless steel can not influence the quality of polysilicon, so all manufacture reduction furnace in the past with stainless steel.Actually this is not so, and test shows that in hot environment, stainless steel also has slight contamination to polysilicon.In view of this, the reduction furnace with stainless steel is made is difficult to produce high-quality polysilicon.
General reduction furnace not only throughput is low, and quality product is difficult to improve, and power consumption is also many.The shell of general reduction furnace all has water jacket, and is not incubated measure, for preventing that shell from by roasting bad, will feed a large amount of water during production in water jacket, by water heat is taken away fully, reaches the purpose of cooling.The temperature of shell is to have lowered, and also protection has been lived, and can be pulled away by a large amount of heat energy.Take away heat energy and must increase power consumption and production cost.
The purpose of invention
The purpose of this invention is to provide a kind of reduction furnace of producing polysilicon, particularly a kind of reduction furnace that can production major diameter polysilicon improves the output and the quality of polysilicon with this, reduces the power consumption and the production cost of polysilicon.
Technical scheme
For achieving the above object, reduction furnace of the present invention adopts two-layer housing, it except stainless steel casing (1), chassis (7), heating element (3), electrode (6), feed-pipe (4), offgas duct (5), viewing window (10) are arranged, the housing (2) that also has one deck to make in the inside of stainless steel casing (1) by silica glass; Be connected to feed-pipe (4) at the top of this quartz glass (2), the bottom is connected to offgas duct (5), and the heating element made from stone mill (3) is equipped with in the centre; Stone mill well heater (9) is equipped with in cavity the inside between the housing (2) that stainless steel casing (1) and silica glass are made; Above-mentioned heating element (3) links to each other with electrode (6), and stone mill well heater (9) is to link to each other with electrode (11), and they are two independently power supply systems; Heating element (3) and stone mill well heater (9) all with body of heater insulation, all be lined with one deck silica glass (18) below it; The circular thermal baffle made from stone mill (12) is equipped with at the top of the housing of making at silica glass (2); The tubular thermal baffle made from stone mill (13) is equipped with in cavity the inside between stainless steel casing (1) and quartz glass (2).
As a further improvement on the present invention, heating element (3) is made up of a stone mill pipe (14) and a stone mill rod (15); This stone mill rod (15) is inserted in stone mill pipe (14) lining, and its upper end closely contacts with stone mill pipe (14), and fastening with stone mill nut (16), and its lower end is fastened on the electrode (6); The lower end of described stone mill pipe (14) is communicated with another electrode (6) by stone mill base (17), thereby makes electrode (6) and stone mill rod (15), stone mill pipe (14), stone mill base (17) and another electrode (6) be connected into a resistance loop.After the improvement, stone mill pipe (14) has just become the shell of heating element (3), and the polysilicon that chemical reaction generates just is deposited on this shell, and this tubular shape polysilicon deposition of being more convenient for, and forms silicon rod at last.Because stone mill pipe (14) is outer through being ten times of molybdenum filament, molybdenum pipe or silicon core at least, even can reach hundred times, so, just can tenfold, even the output of hundred times of ground raising polysilicons.
As another kind of improvement the of the present invention, heating element (3) is sealed in the silica tube (8).This polysilicon that chemical reaction is generated is not directly to be deposited on the heating element (3), but is deposited on the outer wall of silica tube (8).Because the external diameter of silica tube (8) is greater than the external diameter of heating element (3), so more help improving the output of polysilicon.Moreover, can also prevent that like this polysilicon from being stain by the stone mill of heating element (3), thereby can also guarantee the quality of polysilicon product further.
As another improvement of the present invention, stone mill well heater (9) is to adopt cartridge type well heater commonly used on a kind of single crystal growing furnace.This well heater has been used for many years in the monocrystalline industry, and its technology is very ripe.Because the interior warp of this well heater can be very big, can satisfy from the indirect heating polycrystalline silicon rod fully.So, when production enters the later stage, sedimentary polysilicon is too much on the heating element, and silicon rod is thick excessively, and during shortage of heat that heating element is supplied with, it just can be that polycrystalline silicon rod replenishes heat energy from the outside, and it is slightly long to allow polycrystalline silicon rod continue.
Beneficial effect
Because reduction furnace of the present invention adopts double hull, and one deck of the inside is the housing of being made by silica glass (2).The chemical reaction that the halogenide of silicon and hydrogen take place is to carry out inside the cavity of the housing (2) that silica glass is made, and the generation polysilicon.This housing (2) has stopped that silicon halogenide contacts with stainless with hydrogen, the particularly contact in hot environment, thus can reduce the influence of stainless steel to the polysilicon product quality.
In addition, heating element (3) is sealed in the silica tube (8).So not only more help improving the output of polysilicon, but also can guarantee the quality of polysilicon product further.
Because stone mill well heater (9) arranged, when production enters the later stage, it can be that polycrystalline silicon rod replenishes heat energy from the outside, and it is long thick to allow polycrystalline silicon rod continue, thereby can produce large diameter polysilicon.
Owing to the circular thermal baffle made from stone mill (12) is equipped with at the top of the housing of making at silica glass (2); The tubular thermal baffle made from stone mill (13) is equipped with in cavity the inside between stainless steel casing (1) and quartz glass (2).Make body of heater that insulation has been arranged like this, reduced the thermosteresis of reduction furnace, thereby can reduce the power consumption and the production cost of polysilicon.
Description of drawings
The reduction furnace of a kind of production major diameter of the present invention polysilicon being used below in conjunction with accompanying drawing describes in further detail.
Fig. 1 is the sectional view of reduction furnace of the present invention;
Fig. 2 is the sectional view of heating element;
Fig. 3 is the sectional view of stone mill well heater;
Fig. 4 is the operation synoptic diagram in the early stage of reduction furnace of the present invention;
Fig. 5 is the operation synoptic diagram in the later stage of reduction furnace of the present invention.
Embodiment
As can see from Figure 1, reduction furnace of the present invention is a double hull, it except having the stainless steel casing (1) the same with general reduction furnace, the housing (2) that the inside also has one deck to be made by silica glass.This double hull for the chemical reaction of the halogenide of silicon and hydrogen provide one more airtight, Jie Jing place more, housing (2) particularly, it is made with silica glass, silica glass also is that a kind of cleanliness factor is high, the material of chemical property quite stable, it is can not stain polysilicon.Housing (2) has been arranged, just can stop that silicon halogenide contacts with stainless with hydrogen, the particularly contact in hot environment, thus can reduce the influence of stainless steel to the polysilicon product quality.
As can see from Figure 1, be connected to feed-pipe (4) at the top of this quartz glass (2), the bottom is connected to offgas duct (5), and the heating element made from stone mill (3) is equipped with in the centre.This structure arrangement is to allow the raw material of participating in chemical reaction enter from top, and the tail gas that the reaction back generates is from following discharge.Go out under this is enterprising, make the raw material that enters be full of whole space easily, the uniform deposition of polysilicon is good.
As can see from Figure 1, stone mill well heater (9) is equipped with in the inside of the cavity between the housing (2) that stainless steel casing (1) and silica glass are made.When production enters the later stage, silicon rod is long thick, and during shortage of heat that heating element (3) is supplied with, stone mill well heater (9) can be that polycrystalline silicon rod replenishes heat energy from the outside, and it is long thick to allow polycrystalline silicon rod continue.
As can see from Figure 1, heating element (3) is sealed in the silica tube (8).This polysilicon that chemical reaction is generated is not directly to be deposited on the heating element (3), but be deposited on the outer wall of silica tube (8), so, the polysilicon of production just can prevent to be stain by the stone mill of heating element (3), thereby can guarantee the quality of polysilicon product.
As can see from Figure 1, heating element (3) links to each other with electrode (6), and stone mill well heater (9) is to link to each other with electrode (11), and they are two independently power supply systems.Like this, two systems do not disturb mutually, only send electricity for heating element (3) when producing early stage, allow heating element (3) work alone; To the later stage send electricity for well heater (9) again, can allow two to work simultaneously; The power supply that also can close heating element (3) works independently by well heater (9).
As can see from Figure 1, heating element (3) and stone mill well heater (9) all with body of heater insulation, all be lined with one deck silica glass (18) below it.
As can see from Figure 1, the circular thermal baffle made from stone mill (12) is equipped with at the top of the housing of making at silica glass (2); The tubular thermal baffle made from stone mill (13) is equipped with in cavity the inside between stainless steel casing (1) and quartz glass (2).Make body of heater that insulation has been arranged like this, reduced the thermosteresis of reduction furnace, thereby can reduce the power consumption and the production cost of polysilicon.
As can see from Figure 2, heating element (3) is made up of a stone mill pipe (14) and a stone mill rod (15); This stone mill rod (15) is inserted in stone mill pipe (14) lining, and its upper end closely contacts with stone mill pipe (14), and fastening with stone mill nut (16), and its lower end is fastened on the electrode (6); The lower end of described stone mill pipe (14) is communicated with another electrode (6) by stone mill base (17), thereby makes electrode (6) and stone mill rod (15), stone mill pipe (14), stone mill base (17) and another electrode (6) be connected into a resistance loop.Heating element (3) adopts said structure that two benefits are arranged, the first, the stone mill thermal expansivity is big, adopts said structure to be fixed below just, and above be free end, the stone mill volumetric expansion is not limited, so heating element (3) can not damage because of thermal expansion; Its two, adopt said structure, stone mill pipe (14) has just become the shell of heating element (3), the polysilicon that chemical reaction generates just is deposited on this shell, and this tubular shape polysilicon deposition of being more convenient for, and forms silicon rod at last.Because stone mill pipe (14) external diameter is ten times of molybdenum filament, molybdenum pipe or silicon core at least, even can reach hundred times, so, just can tenfold, even the output of hundred times of ground raising polysilicons.
As can see from Figure 3, stone mill well heater (9) is to adopt cartridge type well heater commonly used on a kind of single crystal growing furnace.This well heater has been used for many years in the monocrystalline industry, and its technology is very ripe.This well heater is composed in series by the heating piece more than 8 (19) at least, and its internal diameter can be very big, can be surrounded polycrystalline silicon rod fully, from the indirect heating polycrystalline silicon rod.Can make the temperature of heating even like this, thereby it is evenly long thick to be convenient to polycrystalline silicon rod.Visual appearance to polycrystalline silicon rod is beneficial like this.
As can see from Figure 4, the hydrogen that halogenide of silicon (silicon tetrachloride or trichlorosilane) and purification are good enters in the cavity of housing (2) as the logical feed-pipe (4) of raw material.The surface temperature of heating element in this cavity (3) is about 1100C °-1200C °, and in such hot environment, halogenide and hydrogen generation chemical reaction, the polysilicon deposition of generation and have grown up to silicon rod gradually on heating element (3).Resultant in the above-mentioned chemical reaction also has hydrogenchloride except that polysilicon.This hydrogenchloride connection has entered cavity with those, but the raw material of not finishing chemical reaction is known as tail gas together.Tail gas will be emitted from the offgas duct (5) of cavity bottom.
Chemical reaction is proceeded, and the polysilicon that is deposited on the heating element is more and more.As can see from Figure 5, when production enters the later stage after (generally be when settled layer thickness above 30 millimeters), beginning is stone mill well heater (9) energising, is that polycrystalline silicon rod replenishes heat energy from the outside, and it is long thick to allow polycrystalline silicon rod continue.Silicon rod after this length is thick is exactly a polysilicon product.
Claims (4)
1, a kind ofly produce the reduction furnace that polysilicon is used, it waits other to form by parts by stainless steel casing (1), chassis (7), heating element (3), electrode (6), feed-pipe (4), offgas duct (5), viewing window (10), it is characterized in that: the housing of this reduction furnace is two-layer, except stainless steel casing (1), the housing (2) that the inside also has one deck to be made by silica glass; Be connected to feed-pipe (4) at the top of this quartz glass (2), the bottom is connected to offgas duct (5), and the heating element made from stone mill (3) is equipped with in the centre; Stone mill well heater (9) is equipped with in cavity the inside between the housing (2) that stainless steel casing (1) and silica glass are made; Above-mentioned heating element (3) links to each other with electrode (6), and stone mill well heater (9) is to link to each other with electrode (11), and they are two independently power supply systems; Heating element (3) and stone mill well heater (9) all with body of heater insulation, all be lined with one deck silica glass (18) below it; The circular thermal baffle made from stone mill (12) is equipped with at the top of the housing of making at silica glass (2); The tubular thermal baffle made from stone mill (13) is equipped with in cavity the inside between stainless steel casing (1) and quartz glass (2).
2, the reduction furnace that production polysilicon according to claim 1 is used is characterized in that: heating element (3) is made up of a stone mill pipe (14) and a stone mill rod (15); This stone mill rod (15) is inserted in stone mill pipe (14) lining, and its upper end closely contacts with stone mill pipe (14), and fastening with stone mill nut (16), and its lower end is fastened on the electrode (6); The lower end of described stone mill pipe (14) is communicated with another electrode (6) by stone mill base (17), thereby makes electrode (6) and stone mill rod (15), stone mill pipe (14), stone mill base (17) and another electrode (6) be connected into a resistance loop.
3, the reduction furnace that production polysilicon according to claim 1 is used is characterized in that: heating element (3) is sealed in the silica tube (8).
4, the reduction furnace that production polysilicon according to claim 1 is used is characterized in that: stone mill well heater (9) is a cartridge type well heater commonly used on a kind of single crystal growing furnace.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510077714 CN1884068A (en) | 2005-06-24 | 2005-06-24 | Reducing furnace for producing polysilicon |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510077714 CN1884068A (en) | 2005-06-24 | 2005-06-24 | Reducing furnace for producing polysilicon |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311656B (en) * | 2008-03-12 | 2010-06-09 | 江苏双良锅炉有限公司 | Quick-opening type water-cooling structure polycrystalline silicon reducing furnace |
| CN102134074A (en) * | 2011-04-18 | 2011-07-27 | 天津大学 | Polycrystalline silicon reducing furnace and operating method thereof |
| CN101463498B (en) * | 2008-12-05 | 2011-08-03 | 袁建中 | Reduction reaction furnace for polysilicon |
| CN102140686A (en) * | 2010-02-03 | 2011-08-03 | 中国科学院福建物质结构研究所 | Novel polycrystalline silicon smelting furnace |
| CN102145891A (en) * | 2011-04-02 | 2011-08-10 | 天津大学 | Energy-saving furnace body of polycrystalline silicon reduction furnace |
| CN101565184B (en) * | 2009-05-22 | 2011-12-07 | 宜昌南玻硅材料有限公司 | Electrode sealing method in hydrogen furnace device for polysilicon production and device thereof |
| CN102295288A (en) * | 2011-06-09 | 2011-12-28 | 重庆大全新能源有限公司 | 24-pair silicon rod polysilicon reduction furnace power supply system |
| CN101993080B (en) * | 2009-08-21 | 2012-12-19 | 张家港市华凌化工机械有限公司 | Polysilicon reducing furnace |
| CN101445239B (en) * | 2007-11-28 | 2013-02-06 | 三菱麻铁里亚尔株式会社 | Polycrystalline silicon manufacturing apparatus and manufacturing method |
| CN101538042B (en) * | 2008-03-21 | 2013-02-20 | 三菱麻铁里亚尔株式会社 | Polycrystalline silicon reactor and polycrystalline silicon manufacture method |
| CN101392408B (en) * | 2007-09-20 | 2014-03-05 | 三菱麻铁里亚尔株式会社 | Reactor for polycrystalline silicon and polycrystalline silicon production method |
| CN102092717B (en) * | 2009-08-20 | 2015-04-29 | 王春龙 | Polysilicon reduction furnace |
| CN107515274A (en) * | 2016-06-15 | 2017-12-26 | 上海韵申新能源科技有限公司 | A method and device for evaluating the quality of a polysilicon production system |
| CN111020703A (en) * | 2019-12-26 | 2020-04-17 | 北京北方华创微电子装备有限公司 | High temperature vacuum furnace and semiconductor processing equipment |
| CN112647128A (en) * | 2020-09-24 | 2021-04-13 | 杨小琴 | Deposition growth device for novel glass material |
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2005
- 2005-06-24 CN CN 200510077714 patent/CN1884068A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101392408B (en) * | 2007-09-20 | 2014-03-05 | 三菱麻铁里亚尔株式会社 | Reactor for polycrystalline silicon and polycrystalline silicon production method |
| CN101445239B (en) * | 2007-11-28 | 2013-02-06 | 三菱麻铁里亚尔株式会社 | Polycrystalline silicon manufacturing apparatus and manufacturing method |
| CN101311656B (en) * | 2008-03-12 | 2010-06-09 | 江苏双良锅炉有限公司 | Quick-opening type water-cooling structure polycrystalline silicon reducing furnace |
| CN101538042B (en) * | 2008-03-21 | 2013-02-20 | 三菱麻铁里亚尔株式会社 | Polycrystalline silicon reactor and polycrystalline silicon manufacture method |
| CN101463498B (en) * | 2008-12-05 | 2011-08-03 | 袁建中 | Reduction reaction furnace for polysilicon |
| CN101565184B (en) * | 2009-05-22 | 2011-12-07 | 宜昌南玻硅材料有限公司 | Electrode sealing method in hydrogen furnace device for polysilicon production and device thereof |
| CN102092717B (en) * | 2009-08-20 | 2015-04-29 | 王春龙 | Polysilicon reduction furnace |
| CN101993080B (en) * | 2009-08-21 | 2012-12-19 | 张家港市华凌化工机械有限公司 | Polysilicon reducing furnace |
| CN102140686A (en) * | 2010-02-03 | 2011-08-03 | 中国科学院福建物质结构研究所 | Novel polycrystalline silicon smelting furnace |
| CN102145891A (en) * | 2011-04-02 | 2011-08-10 | 天津大学 | Energy-saving furnace body of polycrystalline silicon reduction furnace |
| CN102134074A (en) * | 2011-04-18 | 2011-07-27 | 天津大学 | Polycrystalline silicon reducing furnace and operating method thereof |
| CN102295288A (en) * | 2011-06-09 | 2011-12-28 | 重庆大全新能源有限公司 | 24-pair silicon rod polysilicon reduction furnace power supply system |
| CN107515274A (en) * | 2016-06-15 | 2017-12-26 | 上海韵申新能源科技有限公司 | A method and device for evaluating the quality of a polysilicon production system |
| CN111020703A (en) * | 2019-12-26 | 2020-04-17 | 北京北方华创微电子装备有限公司 | High temperature vacuum furnace and semiconductor processing equipment |
| CN112647128A (en) * | 2020-09-24 | 2021-04-13 | 杨小琴 | Deposition growth device for novel glass material |
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