CN1858169A - Semiconductor silicon material water base cutting liquid - Google Patents
Semiconductor silicon material water base cutting liquid Download PDFInfo
- Publication number
- CN1858169A CN1858169A CN 200610013974 CN200610013974A CN1858169A CN 1858169 A CN1858169 A CN 1858169A CN 200610013974 CN200610013974 CN 200610013974 CN 200610013974 A CN200610013974 A CN 200610013974A CN 1858169 A CN1858169 A CN 1858169A
- Authority
- CN
- China
- Prior art keywords
- cutting fluid
- chelating agent
- cutting
- polyethylene glycol
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 10
- 238000005520 cutting process Methods 0.000 title abstract description 18
- 239000007788 liquid Substances 0.000 title 1
- 239000002173 cutting fluid Substances 0.000 claims abstract description 32
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 24
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 24
- 239000002738 chelating agent Substances 0.000 claims abstract description 18
- 239000008367 deionised water Substances 0.000 claims abstract description 13
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 13
- 229910021645 metal ion Inorganic materials 0.000 claims description 9
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 5
- HUIGENXVPHFZIL-UHFFFAOYSA-N 2-(2-aminoethylamino)ethane-1,1,1,2-tetrol 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid Chemical group OC(C(O)(O)O)NCCN.OC(C(O)(O)O)NCCN.OC(C(O)(O)O)NCCN.OC(C(O)(O)O)NCCN.C(CN(CC(=O)O)CC(=O)O)N(CC(=O)O)CC(=O)O HUIGENXVPHFZIL-UHFFFAOYSA-N 0.000 claims description 3
- 229920000768 polyamine Polymers 0.000 claims description 3
- BYACHAOCSIPLCM-UHFFFAOYSA-N 2-[2-[bis(2-hydroxyethyl)amino]ethyl-(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)CCN(CCO)CCO BYACHAOCSIPLCM-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 230000009471 action Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000001179 sorption measurement Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000007935 neutral effect Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 3
- 238000003756 stirring Methods 0.000 description 7
- 150000001412 amines Chemical class 0.000 description 5
- -1 iron ions Chemical class 0.000 description 4
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 235000011837 pasties Nutrition 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 150000007530 organic bases Chemical group 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
本发明涉及一种用于硅晶片和其它化合物半导体材料晶块切削的碱性半导体硅材料水基切削液，主要由聚乙二醇、pH值调节剂、螯合剂组成，其组分及生产浓度质量份数为：分子量200－1000聚乙二醇30－90，pH值调节剂9－30，螯合剂1－10，去离子水余量。有益效果：将现有中性切削液改进为具有化学劈裂作用和与硅发生化学反应的碱性切削液，使切片中单一的机械作用转变为均匀稳定的化学机械作用，有效地解决了切片工艺中的应力问题而降低损伤，减少了硅片表面微裂与破碎。使后续加工去除量少，既提高了切片效率与成品率，有效地解决了切屑和切粒粉末的再沉积的问题，避免了硅片表面的化学键合吸附现象。The invention relates to an alkaline semiconductor silicon material water-based cutting fluid for cutting silicon wafers and other compound semiconductor material crystal blocks, which mainly consists of polyethylene glycol, a pH regulator and a chelating agent, and its components and production concentration The parts by mass are: molecular weight 200-1000 polyethylene glycol 30-90, pH regulator 9-30, chelating agent 1-10, deionized water balance. Beneficial effects: the existing neutral cutting fluid is improved into an alkaline cutting fluid with chemical splitting effect and chemical reaction with silicon, so that the single mechanical action in the slice is transformed into a uniform and stable chemical mechanical action, effectively solving the problem of cutting The stress problem in the process can reduce the damage, and reduce the microcrack and breakage of the silicon wafer surface. The amount of subsequent processing removal is small, which not only improves the slicing efficiency and yield, effectively solves the problem of redeposition of chips and diced powder, but also avoids the phenomenon of chemical bonding and adsorption on the surface of silicon wafers.
Description
Technical Field
The invention belongs to cutting fluid, and particularly relates to high-efficiency alkaline semiconductor silicon material water-based cutting fluid for cutting inner circles of crystal blocks of monocrystalline silicon and polycrystalline silicon semiconductor materials.
Background
When an inner cutting blade is used for cutting a monocrystalline silicon, polycrystalline silicon and other crystal block workpieces made of compound semiconductor materials, a neutral cutting fluid is generally widely used for lubricating the space between the blade and the workpiece, reducing the temperature and the frictional heat, and washing away cutting scraps. Some cutting fluids add rust inhibitors to prevent equipment and blades from rusting. Cutting semiconductor crystal blocks mainly depends on the strong mechanical action of a high-speed rotating blade. The machining mode causes the problems of rough cutting marks on the section of the slice, deep broken layer and damaged layer, large residual stress, serious problems of fragments, edge breakage, root breakage and the like, the depth of the damaged layer reaches 30-60 micrometers, the machining amount of the subsequent grinding, polishing and other procedures is increased, materials are wasted, and the machining efficiency and the yield are reduced. Due to the action of the surface energy of the chips and the new cut surfaces, the chips and the surfaces can generate strong adsorption, the chips are not easy to peel and are taken away by the cutting fluid, and the cutting speed is also hindered. In addition, due to the cutting tool and environmental factors, metal ion contamination mainly including iron ions is generated, and the metal ions adhere to the surface of the sliced wafer and permeate into the wafer to cause metal contamination, which seriously affects the quality of the subsequent process of manufacturing the very large scale integrated circuit. The technical personnel in the industry need to develop a cutting fluid which has no metal ion pollution and can improve the cut sheet yield and the finished product qualification rate.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the semiconductor silicon material water-based cutting fluid which has strong chemical action, rust prevention, easy cleaning, good heat dissipation effect and no metal ion pollution and can cut the wafer under the action of both chemistry and machinery.
In order to achieve the purpose, the invention adopts the following technical scheme: a semiconductor silicon material water-based cutting fluid is characterized in that: the pH value regulator mainly comprises polyethylene glycol, a pH value regulator and a chelating agent, and comprises the following components in parts by mass:
30-90 parts of polyethylene glycol (molecular weight 200-1000),
9 to 30 portions of pH value regulator,
1-10 parts of a chelating agent,
the balance of deionized water.
The pH regulator is organic base of polyhydroxy polyamine, such as hydroxyethyl ethylenediamine and triethanolamine.
The chelating agent has more than 13 chelating rings, is metal ion-free, and is a water-soluble ethylenediaminetetraacetic acid tetrakis (tetrahydroxyethylethylenediamine) FA/O chelating agent.
The invention has the beneficial effects that: the existing neutral cutting fluid is improved into alkaline cutting fluid with chemical splitting action and chemical reaction with silicon, so that the single mechanical action in the slicing is changed into uniform and stable chemical mechanical action, and the stress problem in the slicing process is effectively solved to reduce the damage. Meanwhile, the alkaline cutting fluid can avoid acid corrosion of equipment and prolong the service life of the blade. Effectively solves the problem of redeposition of cutting chips and granulated powder, avoids the chemical bonding adsorption phenomenon on the surface of the silicon chip, and is convenient for cleaning and subsequent processing of the silicon chip. The pollution of metal ions, particularly iron ions, is eliminated. The surface damage, mechanical stress and thermal stress of the obtained slice are obviously reduced.
Detailed Description
The following detailed description of the preferred embodiments will be made in conjunction with the accompanying drawings.
A water-based cutting fluid for semiconductor silicon materials mainly comprises polyethylene glycol, a pH value regulator and a chelating agent, and comprises the following components in parts by mass:
30-90 parts of polyethylene glycol (molecular weight 200-
pH value regulator 9-30
Chelating agent 1-10
The balance of deionized water.
The pH value regulator is organic alkali of polyhydroxy polyamine such as hydroxyethyl ethylenediamine, triethanolamine and the like.
The chelating agent is an ethylenediaminetetraacetic acid tetra (tetrahydroxyethylethylenediamine) FA/O chelating agent which has more than 13 chelating rings, is free of metal ions and is soluble in water.
Polyethylene glycol can be adsorbed on the surface of solid particles to generate a sufficiently high potential barrier and an electric barrier, so that the adsorption of cutting particles on a new surface is hindered, meanwhile, when a crystal block cracks under the mechanical force action of a cutter, the crystal block can permeate into a micro crack and is directionally arranged on the surface of the micro crack to form the splitting effect of chemical energy, and cutting fluid continues to expand to the deep along the crack to be beneficial to the improvement of cutting efficiency.
The pH value regulator amine alkali is an organic alkali, so that the cutting fluid is alkaline and can react with silicon chemically, as shown in the formula: the hydroxyl ions generated by the amine alkali react with the silicon and uniformly act on the processed surface of the silicon wafer, so that the residual damage layer of the silicon wafer is reduced, the processing amount of the subsequent procedure is reduced, and the production cost is reduced. The alkaline cutting fluid has a passivation effect on metal, so that the cutting fluid is prevented from corroding equipment and blades, and the service life of the blades is prolonged. The chelating agent FA/O which has more than 13 chelating rings, is free of metal ions and is soluble in water is a product which is developed by the university of Hebei industry for many years and is commonly used in the semiconductor processing industry, has excellent performance of removing the metal ions, and particularly can obviously remove iron ions generated by a blade. Deionized water is the most predominant solvent.
Example 1: 1000g of cutting fluid with production concentration is prepared, the polyethylene glycol in the embodiment has low molecular weight, and the obtained cutting fluid is suitable for cutting semiconductor materials.
900g of polyethylene glycol (PEG200), 90g of amine base-hydroxyethyl ethylenediamine, a chelating agent-FA/O10 g and the balance of deionized water.
And slowly and sequentially adding the hydroxyethyl ethylenediamine and the chelating agent FA/O with the above quantity values into polyethylene glycol (PEG200) under continuous stirring, and stirring uniformly to obtain 1000g of cutting fluid with production concentration. When in production and use, the deionized water is prepared and used according to the weight percentage of 1: 20.
Example 2: 1000g of cutting fluid is prepared
500g of pasty polyethylene glycol (PEG600), 300g of amine alkali-triethanolamine, 100g of chelating agent-FA/O and the balance of deionized water.
And (2) dissolving pasty polyethylene glycol (PEG600) in deionized water at the temperature of 40-60 ℃ under continuous stirring, slowly and sequentially adding triethanolamine and a chelating agent FA/O with the above amount under continuous stirring, and stirring uniformly to obtain 1000g of cutting fluid.
The polyethylene glycol of the embodiment is still low in molecular weight, and the obtained cutting fluid is suitable for cutting semiconductor materials. When in production and use, the deionized water is prepared and used according to the weight percentage of 1: 15.
Example 3: 1000g of cutting fluid is prepared
Taking 300g of solid polyethylene glycol (PEG1000), 200g of amine alkali-triethanolamine, a chelating agent-FA/O50 g and the balance of deionized water.
Dissolving solid polyethylene glycol (PEG1000) in deionized water, slowly and sequentially adding triethanolamine and chelating agent FA/O with the above amounts under continuous stirring, and stirring to obtain 1000g of cutting fluid.
The polyethylene glycol of this embodiment has a high molecular weight, and the obtained cutting fluid is suitable for cutting semiconductor materials, and also suitable for cutting high hardness materials, such as diamond. When in production and use, the deionized water is prepared and used according to the weight percentage of 1: 10.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the structure of the present invention in any way. Any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention still fall within the scope of the technical solution of the present invention.
Claims (3)
1. A semiconductor silicon material water-based cutting fluid is characterized in that: the pH value regulator mainly comprises polyethylene glycol, a pH value regulator and a chelating agent, and comprises the following components in parts by mass:
molecular weight 200-1000 polyethylene glycol 30-90
pH value regulator 9-30
Chelating agent 1-10
The balance of deionized water.
2. The semiconductor silicon material water-based cutting fluid as set forth in claim 1, wherein: the pH value regulator is polyhydroxy polyamine organic alkali, such as tetrahydroxyethyl ethylenediamine or triethanolamine.
3. The semiconductor silicon material water-based cutting fluid as set forth in claim 1, wherein: the chelating agent is an ethylenediaminetetraacetic acid tetra (tetrahydroxyethylethylenediamine) FA/O chelating agent which has more than 13 chelating rings, is free of metal ions and is soluble in water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100139749A CN100363477C (en) | 2006-05-31 | 2006-05-31 | Semiconductor silicon material water-based cutting fluid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100139749A CN100363477C (en) | 2006-05-31 | 2006-05-31 | Semiconductor silicon material water-based cutting fluid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1858169A true CN1858169A (en) | 2006-11-08 |
| CN100363477C CN100363477C (en) | 2008-01-23 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006100139749A Expired - Fee Related CN100363477C (en) | 2006-05-31 | 2006-05-31 | Semiconductor silicon material water-based cutting fluid |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101928630A (en) * | 2010-05-19 | 2010-12-29 | 兰溪市德圣龙电子材料有限公司 | Preparation method for solar silicon wafer linear cutting mortar |
| CN101948710A (en) * | 2010-09-03 | 2011-01-19 | 兰溪市德圣龙电子材料有限公司 | New method for preparing wire cutting mortar of solar silicon slice |
| CN102229212A (en) * | 2010-08-23 | 2011-11-02 | 蒙特集团（香港）有限公司 | Wet silicon carbide abrasive for wire cutting of solar wafers |
| CN102363738A (en) * | 2011-06-27 | 2012-02-29 | 镇江市港南电子有限公司 | Water base cutting fluid for cutting silicon wafers |
| CN102363737A (en) * | 2011-06-27 | 2012-02-29 | 镇江市港南电子有限公司 | Cutting fluid for cutting silicon wafer |
| CN102453595A (en) * | 2010-10-21 | 2012-05-16 | 河北伟业电子材料有限公司 | Cutting fluid specially used for semiconductor |
| CN103468346A (en) * | 2013-09-11 | 2013-12-25 | 高佳太阳能股份有限公司 | Silicon wafer cutting fluid and preparation method thereof |
| EP2743335A1 (en) * | 2008-12-31 | 2014-06-18 | MEMC Singapore Pte. Ltd. | Methods to recover and purify silicon particles from Saw Kerf |
| CN103881798A (en) * | 2012-12-19 | 2014-06-25 | 上海工程技术大学 | Water-soluble silicon cutting fluid and its application thereof |
| CN104673472A (en) * | 2013-11-28 | 2015-06-03 | 深圳市富兰克科技有限公司 | Silicon crystal cutting fluid |
| CN106835044A (en) * | 2017-02-15 | 2017-06-13 | 苏州思创源博电子科技有限公司 | A kind of preparation method of molybdenum bisuphide semiconductor film material |
| CN106835046A (en) * | 2017-02-15 | 2017-06-13 | 苏州思创源博电子科技有限公司 | A kind of ZnGeP2The preparation method of semiconductor material film |
| CN107586589A (en) * | 2016-07-08 | 2018-01-16 | 天津市澳路浦润滑科技股份有限公司 | A kind of semiconductor silicon material water base cutting liquid |
| CN108531283A (en) * | 2018-06-12 | 2018-09-14 | 山东大海新能源发展有限公司 | A kind of silicon wafer cutting fluid |
| CN108724497A (en) * | 2018-06-12 | 2018-11-02 | 山东大海新能源发展有限公司 | A kind of photovoltaic silicon wafer production method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102041137B (en) * | 2009-10-12 | 2013-07-10 | 上海洗霸科技股份有限公司 | Polycrystalline silicon or monocrystalline silicon cutting fluid |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RO106755B1 (en) * | 1992-03-26 | 1993-06-30 | Alfons Polihroniade | Concentrate for cooling, oiling and pasivation of metalic surfaces during their working |
| JP3832887B2 (en) * | 1996-01-12 | 2006-10-11 | 株式会社ジェイテクト | Circulator |
| CN1039821C (en) * | 1996-04-11 | 1998-09-16 | 株洲电力机车工厂 | Multipurpose water-base cutting fluid |
-
2006
- 2006-05-31 CN CNB2006100139749A patent/CN100363477C/en not_active Expired - Fee Related
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2743335A1 (en) * | 2008-12-31 | 2014-06-18 | MEMC Singapore Pte. Ltd. | Methods to recover and purify silicon particles from Saw Kerf |
| CN101928630B (en) * | 2010-05-19 | 2013-01-09 | 上海甲冠半导体科技有限公司 | Preparation method for solar silicon wafer linear cutting mortar |
| CN101928630A (en) * | 2010-05-19 | 2010-12-29 | 兰溪市德圣龙电子材料有限公司 | Preparation method for solar silicon wafer linear cutting mortar |
| CN102229212A (en) * | 2010-08-23 | 2011-11-02 | 蒙特集团（香港）有限公司 | Wet silicon carbide abrasive for wire cutting of solar wafers |
| CN101948710A (en) * | 2010-09-03 | 2011-01-19 | 兰溪市德圣龙电子材料有限公司 | New method for preparing wire cutting mortar of solar silicon slice |
| CN102453595A (en) * | 2010-10-21 | 2012-05-16 | 河北伟业电子材料有限公司 | Cutting fluid specially used for semiconductor |
| CN102363737A (en) * | 2011-06-27 | 2012-02-29 | 镇江市港南电子有限公司 | Cutting fluid for cutting silicon wafer |
| CN102363738A (en) * | 2011-06-27 | 2012-02-29 | 镇江市港南电子有限公司 | Water base cutting fluid for cutting silicon wafers |
| CN103881798A (en) * | 2012-12-19 | 2014-06-25 | 上海工程技术大学 | Water-soluble silicon cutting fluid and its application thereof |
| CN103468346A (en) * | 2013-09-11 | 2013-12-25 | 高佳太阳能股份有限公司 | Silicon wafer cutting fluid and preparation method thereof |
| CN103468346B (en) * | 2013-09-11 | 2015-03-25 | 高佳太阳能股份有限公司 | Silicon wafer cutting fluid and preparation method thereof |
| CN104673472A (en) * | 2013-11-28 | 2015-06-03 | 深圳市富兰克科技有限公司 | Silicon crystal cutting fluid |
| CN107586589A (en) * | 2016-07-08 | 2018-01-16 | 天津市澳路浦润滑科技股份有限公司 | A kind of semiconductor silicon material water base cutting liquid |
| CN106835044A (en) * | 2017-02-15 | 2017-06-13 | 苏州思创源博电子科技有限公司 | A kind of preparation method of molybdenum bisuphide semiconductor film material |
| CN106835046A (en) * | 2017-02-15 | 2017-06-13 | 苏州思创源博电子科技有限公司 | A kind of ZnGeP2The preparation method of semiconductor material film |
| CN108531283A (en) * | 2018-06-12 | 2018-09-14 | 山东大海新能源发展有限公司 | A kind of silicon wafer cutting fluid |
| CN108724497A (en) * | 2018-06-12 | 2018-11-02 | 山东大海新能源发展有限公司 | A kind of photovoltaic silicon wafer production method |
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Granted publication date: 20080123 |