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CN1848305B - Lead wire for electronic parts and flat cable composed of the lead wire - Google Patents

Lead wire for electronic parts and flat cable composed of the lead wire Download PDF

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Publication number
CN1848305B
CN1848305B CN2006100727098A CN200610072709A CN1848305B CN 1848305 B CN1848305 B CN 1848305B CN 2006100727098 A CN2006100727098 A CN 2006100727098A CN 200610072709 A CN200610072709 A CN 200610072709A CN 1848305 B CN1848305 B CN 1848305B
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alloy
alloy layer
plating
layer
coating
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CN1848305A (en
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中村雅一
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Suzuki Wire (hongkong) Co Ltd
Misuzu K K
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Suzuki Wire (hongkong) Co Ltd
Misuzu K K
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    • H10W72/50
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/4557Plural coating layers
    • H01L2224/45572Two-layer stack coating
    • H10W72/522
    • H10W72/534

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  • Electroplating Methods And Accessories (AREA)

Abstract

The invention discloses a conductor of electronic part, which comprises the following parts: conductive base (1), Sn alloy coating layer (2) with Sn and Bi, Cu, Ag or Sn and Zn on the positive layer of conductive base (1), upper coating layer (3) with Zn coating layer, Ag coating layer, SnZn alloy coating layer, SnAg alloy coating layer or SnBi alloy coating layer on the surface of Sn alloy coating layer (2), wherein the density of Bi, Cu, Ag or Zn is 0.1-15%; the total thickness of Sn alloy coating layer (2) and upper coating layer (3) is 0.5-20 mum.

Description

电子部件用导线以及由该导线构成的扁平电缆 Lead wire for electronic parts and flat cable composed of the lead wire

技术领域technical field

本发明涉及电子部件用导线和使用该导线的扁平电缆。更具体地说,本发明涉及不使用有毒的铅、且具有防止短路原因效果的电子部件用导线和扁平电缆。The present invention relates to a lead wire for electronic components and a flat cable using the lead wire. More specifically, the present invention relates to lead wires and flat cables for electronic components that do not use toxic lead and have an effect of preventing short-circuit causes.

背景技术Background technique

Sn(锡)镀层作为提高焊接性的保护膜或者防蚀涂层用的保护膜而广泛应用于弱电工业用部件以及电子工业用部件等中。Sn (tin) plating is widely used as a protective film for improving solderability or a protective film for an anti-corrosion coating in parts for weak current industries, parts for electronic industries, and the like.

已知在Sn(锡)镀层中会发生晶须(whisker),例如在扁平电缆的间隔极小的可挠性扁平电缆中,有该晶须成为短路原因的情况。It is known that whiskers (whiskers) occur in Sn (tin) plating, and for example, in flexible flat cables in which the intervals between flat cables are extremely small, the whiskers may cause short circuits.

作为防止该短路的对策,有进行退火处理等热处理,以及用金镀层或者SnPb合金镀层等其它镀层保护膜取代Sn镀层的方法。As measures to prevent this short circuit, there are methods of performing heat treatment such as annealing treatment, and replacing the Sn plating with another plating protection film such as gold plating or SnPb alloy plating.

但是,仅进行这样的现有技术的热处理,还不能充分防止晶须的发生。而且,金镀层等虽然不发生晶须,但成本过高,而SnPb合金镀层则由于使用铅,从环保的角度出发并不是优选的。因此,近年来,SnBi(铋)合金镀层正受到人们的注视(例如参照专利文献1),但是,在防止晶须发生这一点上仍然是不充分的。However, just performing such conventional heat treatment cannot sufficiently prevent generation of whiskers. Furthermore, gold plating and the like do not generate whiskers, but are expensive, and SnPb alloy plating is not preferable from the viewpoint of environmental protection because lead is used. Therefore, in recent years, SnBi (bismuth) alloy plating has attracted attention (for example, refer to Patent Document 1), but it is still insufficient in terms of preventing generation of whiskers.

专利文献1:日本特开2002-30468号公报Patent Document 1: Japanese Unexamined Patent Publication No. 2002-30468

发明内容Contents of the invention

因此,本发明是鉴于上述问题而提出的,其目的在于提供一种具有以锡为主的镀层、完全不含有毒物质铅、成本低、且能够可靠防止晶须发生的电子部件用导线以及由该导线构成的扁平电缆。Therefore, the present invention is proposed in view of the above-mentioned problems, and its object is to provide a lead wire for electronic parts that has a tin-based plating layer, does not contain a toxic substance lead at all, is low in cost, and can reliably prevent whiskers from occurring. The wires make up the flat cable.

为了解决上述问题,本发明的电子部件用导线,是在导电基体上形成含有0.1~15重量%的Bi、Cu(铜)、Ag(银)、Zn(锌)中至少一种元素的Sn合金镀层,并在其上层形成Zn镀层、Ag镀层、SnZn合金镀层、SnAg合金镀层、或者SnBi合金镀层而构成。这里,优选对该电子部件用导线进一步实施回焊(reflow)处理等热处理,形成锡扩散的合金层。In order to solve the above-mentioned problems, the wire for electronic parts of the present invention is to form a Sn alloy containing at least one element in Bi, Cu (copper), Ag (silver), and Zn (zinc) on a conductive substrate. coating, and form Zn coating, Ag coating, SnZn alloy coating, SnAg alloy coating, or SnBi alloy coating on the upper layer. Here, it is preferable to further perform heat treatment such as reflow treatment on the lead wire for electronic components to form an alloy layer in which tin is diffused.

而且,优选上述Sn合金镀层与其上层的Zn镀层、Ag镀层、SnZn合金镀层、SnAg合金镀层、或者SnBi合金镀层的合计厚度为0.5~20μm。Furthermore, it is preferable that the total thickness of the Sn alloy plating layer and the Zn plating layer, Ag plating layer, SnZn alloy plating layer, SnAg alloy plating layer, or SnBi alloy plating layer on the upper layer is 0.5 to 20 μm.

而且,本发明是使用这些电子部件用导线来制作扁平电缆。这里,在压延成扁平电缆之后,优选上述Sn合金镀层与其上层的Zn镀层、Ag镀层、SnZn合金镀层、SnAg合金镀层、或者SnBi合金镀层的合计厚度为0.1~3μm,并且优选对该扁平电缆实施退火处理等热处理。Moreover, this invention manufactures a flat cable using these lead wires for electronic components. Here, after being rolled into a flat cable, it is preferable that the total thickness of the above-mentioned Sn alloy plating layer and its upper layer Zn plating layer, Ag plating layer, SnZn alloy plating layer, SnAg alloy plating layer, or SnBi alloy plating layer is 0.1-3 μm, and it is preferable to apply Heat treatment such as annealing treatment.

由于本发明的导线与使用其的扁平电缆,是在导电基体上形成含有0.1~15重量%的Bi、Cu(铜)、Ag(银)、Zn(锌)中至少一种元素的Sn合金镀层,所以无铅且有益于环保,并且能够得到抑制晶须的效果,同时,由于在其上层形成有Zn镀层、Ag镀层、SnZn合金镀层、SnAg合金镀层、或者SnBi合金镀层,所以能够更可靠地防止晶须的发生。Because the wire of the present invention and the flat cable using it form a Sn alloy coating containing at least one element in Bi, Cu (copper), Ag (silver), and Zn (zinc) in an amount of 0.1 to 15% by weight on the conductive substrate , so lead-free and beneficial to environmental protection, and the effect of suppressing whiskers can be obtained. At the same time, since Zn plating, Ag plating, SnZn alloy plating, SnAg alloy plating, or SnBi alloy plating are formed on the upper layer, it can be more reliably Prevents the occurrence of whiskers.

而且,由于实施回焊处理以及退火处理等热处理,使锡扩散到上层的Zn镀层、Ag镀层、SnZn合金镀层、SnAg合金镀层、或者SnBi合金镀层中而形成合金层,所以能够维持其电气特性。Moreover, since heat treatment such as reflow treatment and annealing treatment is performed, tin diffuses into the upper layer of Zn plating, Ag plating, SnZn alloy plating, SnAg alloy plating, or SnBi alloy plating to form an alloy layer, so its electrical properties can be maintained.

而且,由于导线上Sn合金镀层与其上层的Zn镀层、Ag镀层的合计厚度为0.5~20μm,此外,在压延成扁平电缆之后,上述Sn合金镀层与其上层的Zn镀层、Ag镀层、SnZn合金镀层、SnAg合金镀层、或者SnBi合金镀层的合计厚度为0.1~3μm,所以能够在维持相同电气特性的同时还能够可靠地防止晶须的发生。Moreover, since the total thickness of the Sn alloy coating on the wire and its upper Zn coating and Ag coating is 0.5 to 20 μm, in addition, after rolling into a flat cable, the above-mentioned Sn alloy coating and its upper Zn coating, Ag coating, SnZn alloy coating, Since the total thickness of the SnAg alloy plating layer or the SnBi alloy plating layer is 0.1 to 3 μm, generation of whiskers can be reliably prevented while maintaining the same electrical characteristics.

附图说明Description of drawings

图1(a)是第一实施方式的导线的截面图,(b)是第二实施方式的导线的截面图。FIG. 1( a ) is a cross-sectional view of the lead wire of the first embodiment, and FIG. 1( b ) is a cross-sectional view of the lead wire of the second embodiment.

图2(a)是第三实施方式的扁平电缆的截面图,(b)是第四实施方式的扁平电缆的截面图。2( a ) is a cross-sectional view of the flat cable of the third embodiment, and (b) is a cross-sectional view of the flat cable of the fourth embodiment.

符号说明:Symbol Description:

A、B-导线A, B-wire

C、D-扁平电缆C, D-flat cable

1-导电基体1- Conductive substrate

2-Sn合金镀层(底层镀层)2-Sn alloy coating (bottom coating)

3-上层镀层3- Upper coating

4-合金层4-alloy layer

具体实施方式Detailed ways

下面,结合附图详细说明本发明的实施方式。Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

图1是表示导线的截面结构图,图2表示扁平电缆的截面结构图。图1(a)是第一实施方式的导线的截面图,(b)是第二实施方式的导线的截面图。图2(a)是第三实施方式的扁平电缆的截面图,(b)是第四实施方式的扁平电缆的截面图。图中的符号1表示导电基体,2表示Sn合金镀层(底层镀层),3表示上层镀层,4表示合金层。FIG. 1 is a cross-sectional view showing a conductive wire, and FIG. 2 is a cross-sectional view showing a flat cable. FIG. 1( a ) is a cross-sectional view of the lead wire of the first embodiment, and FIG. 1( b ) is a cross-sectional view of the lead wire of the second embodiment. 2( a ) is a cross-sectional view of the flat cable of the third embodiment, and (b) is a cross-sectional view of the flat cable of the fourth embodiment. The symbol 1 in the figure represents the conductive substrate, 2 represents the Sn alloy plating layer (underlayer plating layer), 3 represents the upper layer plating layer, and 4 represents the alloy layer.

如图1(a)所示,第一实施方式的导线A,是由导电基体1,覆盖在其上面的Sn与Bi、Cu、Ag或者Sn与Zn的Sn合金镀层(底层镀层)2,以及在其上层形成的Zn镀层、Ag镀层、SnZn合金镀层、SnAg合金镀层、或者SnBi合金镀层的上层镀层3所构成。As shown in Figure 1 (a), the wire A of the first embodiment is made of a conductive substrate 1, covered with a Sn alloy coating (undercoat coating) 2 of Sn and Bi, Cu, Ag or Sn and Zn on it, and The upper layer 3 is composed of Zn plating, Ag plating, SnZn alloy plating, SnAg alloy plating, or SnBi alloy plating formed on the upper layer.

作为导电基体1,可以使用铜线,或黄铜、磷青铜等铜合金线,也可以使用CP线等铁线的表面覆盖有铜或铜合金的线。As the conductive substrate 1 , copper wires or copper alloy wires such as brass and phosphor bronze can be used, and iron wires such as CP wires whose surface is covered with copper or copper alloys can also be used.

Sn合金镀层2中的Bi、Cu、Ag或Zn,在含有多种的情况下,将其平均浓度设定为0.1~15重量%,此外,该Sn合金镀层2与在其上层形成的上层镀层3的合计厚度被设定在0.5~20μm的范围内。Bi, Cu, Ag or Zn in the Sn alloy plating layer 2, in the case of containing multiple kinds, set its average concentration to 0.1 to 15% by weight. In addition, the Sn alloy plating layer 2 and the upper layer plating layer formed on it The total thickness of 3 is set within the range of 0.5 to 20 μm.

通过在Sn中含有Bi、Cu、Ag或Zn中的至少一种,虽然能够在一定程度上防止晶须的发生,但在上述含量不到0.1重量%时,不能充分得到防止晶须发生的效果,而大于15重量%时,Sn合金镀层2的硬度增大,容易发生裂纹破裂等不良情况,且成本也增大。By containing at least one of Bi, Cu, Ag, or Zn in Sn, although the occurrence of whiskers can be prevented to a certain extent, when the above-mentioned content is less than 0.1% by weight, the effect of preventing the occurrence of whiskers cannot be obtained sufficiently. , and when greater than 15% by weight, the hardness of the Sn alloy coating 2 increases, and defects such as cracks and ruptures are likely to occur, and the cost also increases.

本发明通过在该Sn合金镀层2上进一步形成由Zn镀层、Ag镀层、SnZn合金镀层、SnAg合金镀层、或SnBi合金镀层构成的上层镀层3,能够不损失其电气特性,且更可靠地防止晶须的发生。但是,由于该上层镀层过厚时,电气特性下降,所以优选为2μm以下,更优选为0.5μm以下。例如,在由ZnSn合金构成镀层2与在其上实施Zn镀层之后的层中,包含Sn合金镀层2与上层镀层3的全体中的Zn浓度,当然有超过15重量%的情况。这一点在以下其它实施方式中也相同。In the present invention, by further forming an upper layer coating 3 made of Zn coating, Ag coating, SnZn alloy coating, SnAg alloy coating, or SnBi alloy coating on the Sn alloy coating 2, it is possible to prevent crystallization more reliably without losing its electrical characteristics. The occurrence of whiskers. However, if the upper layer plating layer is too thick, the electrical characteristics will be lowered, so it is preferably 2 μm or less, more preferably 0.5 μm or less. For example, in the Zn-Sn alloy plating layer 2 and the Zn plating layer thereon, the Zn concentration in the entirety of the Sn alloy plating layer 2 and the upper layer plating layer 3 may exceed 15% by weight. This also applies to other embodiments described below.

接着,第二实施方式中的导线B,是对所述第一实施方式的Sn合金镀层2与其上层的Zn镀层、Ag镀层、SnZn合金镀层、SnAg合金镀层、或者SnBi合金镀层的上层镀层3实行回焊(reflow)处理等热处理,从而变化为锡扩散的合金层4的导线。Next, the wire B in the second embodiment is to implement the Sn alloy coating 2 of the first embodiment and the upper layer coating 3 of the Zn coating, Ag coating, SnZn alloy coating, SnAg alloy coating, or SnBi alloy coating on the upper layer. Heat treatment such as reflow treatment changes the wire into the tin-diffused alloy layer 4 .

接着,第三实施方式中的扁平电缆C,是使用导线A由延伸压延机制作的电缆,第四实施方式中的扁平电缆D,是使用导线B由延伸压延机制作的电缆。Next, the flat cable C in the third embodiment is a cable produced by a drawing calender using the conducting wire A, and the flat cable D in the fourth embodiment is a cable produced using the conducting wire B by a drawing calender.

这些压延成扁平电缆后的Sn合金镀层2与上层镀层3的合计厚度,优选为0.1~3μm,更优选为0.3~0.7μm。The total thickness of the Sn alloy plating layer 2 and the upper layer plating layer 3 after rolling into a flat cable is preferably 0.1 to 3 μm, more preferably 0.3 to 0.7 μm.

其中,第四实施方式中的扁平电缆D,是通过对扁平电缆C进行通电退火等热处理而制作的。Among them, the flat cable D in the fourth embodiment is produced by subjecting the flat cable C to heat treatment such as electrical annealing.

(实施例1)(Example 1)

在对直径为0.6mm的铜线(导电基体)进行电解脱脂、酸洗等前处理之后,使用石原药品公司(日文名:石原薬品)生产的电镀药品实施Sn·Bi合金电镀,形成Sn合金镀层(底层镀层)。After pretreatment such as electrolytic degreasing and pickling, the copper wire (conductive substrate) with a diameter of 0.6 mm is subjected to Sn Bi alloy plating using plating chemicals produced by Ishihara Pharmaceutical Co., Ltd. (Japanese name: Ishihara Pharmaceutical Co., Ltd.) to form a Sn alloy plating layer (bottom plating).

接着,实施Zn电镀,形成上层镀层,构成具有双层结构的镀层的导线。而且,由SAIKAWA公司(日文名:サイカワ)生产的延伸压延机进行延伸、压延与通电退火处理,制成扁平电缆。Next, Zn electroplating is performed to form an upper layer plating layer, and a lead wire having a double-layer structure plating layer is formed. Moreover, the stretching calender produced by SAIKAWA Corporation (Japanese name: サイカワ) performs stretching, calendering, and electrification annealing to make flat cables.

(实施例2)(Example 2)

在对直径为0.6mm的铜线(导电基体)进行电解脱脂、酸洗等前处理之后,使用日矿Metal Plating公司(日文名:日鉱メタルプレ一ティング)生产的电镀药品实施Sn·Zn合金电镀,形成Sn合金镀层(底层镀层)。After pretreatments such as electrolytic degreasing and pickling on the copper wire (conductive substrate) with a diameter of 0.6 mm, Sn Zn alloy electroplating is carried out using electroplating chemicals produced by Nippon Metal Plating Co., Ltd. A Sn alloy plating layer (underlayer plating layer) is formed.

接着,实施Zn电镀,形成上层镀层,构成具有双层结构的镀层的导线。而且,由上述延伸压延机进行延伸、压延与通电退火处理,制成扁平电缆。Next, Zn electroplating is performed to form an upper layer plating layer, and a lead wire having a double-layer structure plating layer is formed. Then, stretching, rolling, and electrical annealing were performed by the above-mentioned stretching calender to produce a flat cable.

(实施例3)(Example 3)

在对直径为0.6mm的铜线(导电基体)进行电解脱脂、酸洗等前处理之后,使用上村工业公司(日文名:上村工業)生产的电镀液实施Sn·Cu合金电镀,形成Sn合金镀层(底层镀层)。After pretreatments such as electrolytic degreasing and pickling, the copper wire (conductive substrate) with a diameter of 0.6mm is subjected to Sn Cu alloy plating using a plating solution produced by Uemura Industry Co., Ltd. (Japanese name: Uemura Industry) to form a Sn alloy plating layer (bottom plating).

接着,实施Zn电镀,形成上层镀层,构成具有双层结构的镀层的导线。而且,由上述延伸压延机进行延伸、压延与通电退火处理,制成扁平电缆。Next, Zn electroplating is performed to form an upper layer plating layer, and a lead wire having a double-layer structure plating layer is formed. Then, stretching, rolling, and electrical annealing were performed by the above-mentioned stretching calender to produce a flat cable.

(实施例4)(Example 4)

在对直径为0.6mm的铜线(导电基体)进行电解脱脂、酸洗等前处理之后,使用石原药品公司生产的电镀药品实施Sn·Ag合金电镀,形成Sn合金镀层(底层镀层)。After pretreatments such as electrolytic degreasing and pickling are performed on a copper wire (conductive substrate) with a diameter of 0.6mm, Sn·Ag alloy plating is performed using electroplating chemicals produced by Ishihara Pharmaceutical Co., Ltd. to form a Sn alloy plating layer (underlayer plating layer).

接着,实施Zn电镀,形成上层镀层,构成具有双层结构的镀层的导线。而且,由上述延伸压延机进行延伸、压延与通电退火处理,制成扁平电缆。Next, Zn electroplating is performed to form an upper layer plating layer, and a lead wire having a double-layer structure plating layer is formed. Then, stretching, rolling, and electrical annealing were performed by the above-mentioned stretching calender to produce a flat cable.

(实施例5)(Example 5)

在对直径为0.6mm的铜线(导电基体)进行电解脱脂、酸洗等前处理之后,使用石原药品公司生产的电镀药品实施Sn·Bi合金电镀,形成Sn合金镀层(底层镀层)。After pretreatments such as electrolytic degreasing and pickling are performed on a copper wire (conductive substrate) with a diameter of 0.6 mm, Sn Bi alloy plating is performed using plating chemicals produced by Ishihara Pharmaceutical Co., Ltd. to form a Sn alloy plating layer (underlayer plating layer).

接着,使用Meltex公司(日文名:メルテックス)生产的电镀液实施Ag电镀,形成上层镀层,构成具有双层结构的镀层的导线。而且,由上述延伸压延机进行延伸、压延与通电退火处理,制成扁平电缆。Next, Ag electroplating was performed using a plating solution produced by Meltex Corporation (Japanese name: Meltex), to form an upper layer plating layer, and constitute a lead wire having a double-layer structure plating layer. Then, stretching, rolling, and electrical annealing were performed by the above-mentioned stretching calender to produce a flat cable.

(实施例6)(Example 6)

在对直径为0.6mm的铜线(导电基体)进行电解脱脂、酸洗等前处理之后,使用石原药品公司生产的电镀药品实施Sn·Bi合金电镀,形成Sn合金层(底层镀层)。After pretreatments such as electrolytic degreasing and pickling, the copper wire (conductive substrate) with a diameter of 0.6mm was subjected to Sn Bi alloy plating using plating chemicals produced by Ishihara Pharmaceutical Co., Ltd. to form a Sn alloy layer (bottom plating layer).

接着,使用日矿Metal Plating公司生产的电镀液形成Sn·Zn合金镀层,构成具有双层结构的镀层的导线。而且,由上述延伸压延机进行延伸、压延与通电退火处理,制成扁平电缆。Next, a Sn·Zn alloy plating layer was formed using a plating solution produced by Nippon Mining Metal Plating Co., Ltd. to form a lead wire with a double-layer structure. Then, stretching, rolling, and electrical annealing were performed by the above-mentioned stretching calender to produce a flat cable.

(实施例7)(Example 7)

在对直径为0.6mm的铜线(导电基体)进行电解脱脂、酸洗等前处理之后,使用日矿Metal Plating公司生产的电镀液实施Sn·Zn合金电镀,形成Sn合金层(底层镀层)。After pretreatments such as electrolytic degreasing and pickling are performed on the copper wire (conductive substrate) with a diameter of 0.6mm, Sn Zn alloy plating is performed using the plating solution produced by Nippon Metal Plating Co., Ltd. to form a Sn alloy layer (bottom plating layer).

接着,使用日矿Metal Plating公司生产的电镀液,形成Zn浓度(%)比底层镀层高的Sn·Zn镀层,构成具有双层结构的镀层的导线。而且,由上述延伸压延机进行延伸、压延与通电退火处理,制成扁平电缆。Next, using a plating solution produced by Nippon Mining Metal Plating Co., Ltd., a Sn·Zn plating layer with a Zn concentration (%) higher than that of the underlying plating layer was formed to form a lead wire having a double-layered plating layer. Then, stretching, rolling, and electrical annealing were performed by the above-mentioned stretching calender to produce a flat cable.

(实施例8)(Embodiment 8)

在对直径为0.6mm的铜线(导电基体)进行电解脱脂、酸洗等前处理之后,使用日矿Metal Plating公司生产的电镀液实施Sn·Zn合金电镀,形成Sn合金层(底层镀层)。After pretreatments such as electrolytic degreasing and pickling are performed on the copper wire (conductive substrate) with a diameter of 0.6mm, Sn Zn alloy plating is performed using the plating solution produced by Nippon Metal Plating Co., Ltd. to form a Sn alloy layer (bottom plating layer).

接着,使用石原药品公司生产的电镀液形成Sn·Bi合金镀层,构成具有双层结构的镀层的导线。而且,由上述延伸压延机进行延伸、压延与通电退火处理,制成扁平电缆。Next, a Sn·Bi alloy plating layer was formed using a plating solution produced by Ishihara Pharmaceutical Co., Ltd., to form a lead wire having a double-layer structure of the plating layer. Then, stretching, rolling, and electrical annealing were performed by the above-mentioned stretching calender to produce a flat cable.

(比较例1~3)(Comparative examples 1 to 3)

在对直径为0.6mm的铜线(导电基体)进行电解脱脂、酸洗等前处理之后,使用石原药品公司生产的电镀药品实施Sn电镀,形成具有Sn镀层的导线。而且,由上述延伸压延机进行延伸、压延与通电退火处理,制成扁平电缆。After pretreatments such as electrolytic degreasing and pickling are performed on a copper wire (conductive substrate) with a diameter of 0.6mm, Sn plating is performed using plating chemicals produced by Ishihara Pharmaceutical Co., Ltd. to form a wire with a Sn plating layer. Then, stretching, rolling, and electrical annealing were performed by the above-mentioned stretching calender to produce a flat cable.

(比较例4)(comparative example 4)

在对直径为0.6mm的铜线(导电基体)进行电解脱脂、酸洗等前处理之后,与实施例1同样,使用石原药品公司生产的电镀药品实施Sn·Bi合金电镀,形成具有该合金镀层的导线。而且,由上述延伸压延机进行延伸、压延与通电退火处理,制成扁平电缆。After pretreatments such as electrolytic degreasing and pickling are performed on the copper wire (conductive substrate) with a diameter of 0.6mm, the same as in Example 1, the Sn Bi alloy electroplating is carried out using the electroplating chemicals produced by Ishihara Pharmaceutical Co., Ltd. to form an alloy coating of wires. Then, stretching, rolling, and electrical annealing were performed by the above-mentioned stretching calender to produce a flat cable.

(比较例5)(comparative example 5)

在对直径为0.6mm的铜线(导电基体)进行电解脱脂、酸洗等前处理之后,与实施例2同样,使用日矿Metal Plating公司生产的电镀药品实施Sn·Zn合金电镀,形成具有该合金镀层的导线。而且,由上述延伸压延机进行延伸、压延与通电退火处理,制成扁平电缆。After pretreatments such as electrolytic degreasing and pickling are carried out to the copper wire (conductive substrate) having a diameter of 0.6mm, the same as in Example 2, the electroplating chemicals produced by Nippon Mining Metal Plating Co., Ltd. are used to implement Sn.Zn alloy electroplating to form a alloy-coated wire. Then, stretching, rolling, and electrical annealing were performed by the above-mentioned stretching calender to produce a flat cable.

为了对上述实施例1~8,比较例1~5的各扁平电缆各自进行评价而进行层压(laminate)加工,与进行回焊处理的Sn电镀的连接器相嵌合,在室温下放置1000小时后,用日立制作所生产的扫描电子显微镜对晶须发生的情况进行确认与评价。In order to evaluate each of the flat cables of Examples 1 to 8 and Comparative Examples 1 to 5 above, they were laminated, fitted with Sn-plated connectors subjected to reflow treatment, and left at room temperature for 1000 hours. Hours later, the occurrence of whiskers was confirmed and evaluated with a scanning electron microscope manufactured by Hitachi, Ltd.

各实施例与比较例的评价结果如下表1所示。The evaluation results of each Example and Comparative Example are shown in Table 1 below.

表1中的底层镀层的厚度、上层镀层的厚度、合计厚度是压延成扁平电缆前的导线中的厚度,晶须评价中的最大长度(μm)是发生的晶须中最长晶须的长度,发生率(%)是(晶须发生导体的个数)/(评价导体的总数)。The thickness of the bottom layer plating, the thickness of the top layer plating, and the total thickness in Table 1 are the thicknesses in the wire before being rolled into a flat cable, and the maximum length (μm) in the whisker evaluation is the length of the longest whisker among the generated whiskers , and the occurrence rate (%) is (the number of whisker-generating conductors)/(the total number of evaluation conductors).

表1

Figure G06172709820060413D000071
Table 1
Figure G06172709820060413D000071

由表1可以得到以下结果。The following results can be obtained from Table 1.

(1)实施例1~8的任何一个,晶须最大长度都在20μm以下,晶须发生率都在10%以下。由此可知,即使是与比较例4、5相比,也能够可靠防止晶须的发生。(1) In any of Examples 1 to 8, the maximum whisker length was 20 μm or less, and the whisker generation rate was 10% or less. From this, it can be seen that even compared with Comparative Examples 4 and 5, generation of whiskers can be reliably prevented.

(2)由比较例1~5可知,任何一个的晶须最大长度都在50μm以上,晶须发生率都在20%以上。将比较例1~3与比较例4、5相比,虽然能够确认Sn-Bi合金镀层,Sn-Zn合金镀层具有防止晶须发生的效果,但与实施例1~8相比,该效果相差很大,可知比较例4、5的效果是不充分的。(2) From Comparative Examples 1 to 5, it can be seen that the maximum whisker length in any of them is 50 μm or more, and the whisker generation rate is 20% or more. Comparing Comparative Examples 1 to 3 with Comparative Examples 4 and 5, it can be confirmed that the Sn-Bi alloy coating and the Sn-Zn alloy coating have the effect of preventing the generation of whiskers, but compared with Examples 1 to 8, the effect is inferior It is found that the effects of Comparative Examples 4 and 5 are insufficient.

Claims (6)

1. electronic component-use lead is characterized in that:
Form the Sn alloy layer of at least a element among Bi, the Ag contain 0.1~15 weight %, the Zn on conducting base, layer is formed with Zn coating, SnZn alloy layer or SnBi alloy layer thereon,
The combination of the coating on described Sn alloy layer and upper strata thereof is selected from
The combination of SnBi alloy layer and Zn coating,
The combination of SnZn alloy layer and Zn coating,
The combination of SnAg alloy layer and Zn coating,
The combination of SnBi alloy layer and SnZn alloy layer,
The combination of SnZn alloy layer and SnZn alloy layer and
In the combination of SnZn alloy layer and SnBi alloy layer any.
2. electronic component-use lead according to claim 1 is characterized in that:
This electronic component-use lead is implemented the heat treatment that reflow is handled.
3. electronic component-use lead according to claim 1 and 2 is characterized in that:
The aggregate thickness of the Zn coating on described Sn alloy layer and its upper strata, SnZn alloy layer or SnBi alloy layer is 0.5~20 μ m.
4. flat cable that uses each described electronic component-use wire producing in the claim 1~3.
5. flat cable according to claim 4 is characterized in that:
After rolling into flat cable, the aggregate thickness of the Zn coating on described Sn alloy layer and its upper strata, SnZn alloy layer or SnBi alloy layer is 0.1~3 μ m.
6. flat cable of claim 4 or 5 described flat cables being implemented the heat treatment of annealing in process and forming.
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