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CN1728905A - An organic thin film electroluminescent device - Google Patents

An organic thin film electroluminescent device Download PDF

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Publication number
CN1728905A
CN1728905A CN 200510012212 CN200510012212A CN1728905A CN 1728905 A CN1728905 A CN 1728905A CN 200510012212 CN200510012212 CN 200510012212 CN 200510012212 A CN200510012212 A CN 200510012212A CN 1728905 A CN1728905 A CN 1728905A
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transport layer
electroluminescent device
thin film
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CN100366127C (en
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张希清
姚志刚
杜鹏
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Beijing Jiaotong University
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Abstract

The Electroluminescent device is composed of following layers and parts prepared on clear electrode: cavity transport layer, organic luminous layer, inorganic electron transport layer, electronic potentiometric compensator layer and back electrode. Inorganic electron transport layer is prepared from n type ZnS or n type ZnO with thickness 1nm-10nm. Inorganic electron transport layer is also prepared from other n type wide forbidden band inorganic materials: n type CoO, n type GaN, n type BaO, n type MgO or n type AIN. The invention raises luminescence brightness, efficiency and service life since mutual diffusion between luminous layer and electrode in electroluminescent device and inadequate balance between cavities and electrons are improved in the disclosed structure.

Description

一种有机薄膜电致发光器件An organic thin film electroluminescent device

技术领域technical field

本发明涉及一种有机薄膜电致发光器件,主要用于产生高亮度、效率和长寿命的有机薄膜电致发光器件。The invention relates to an organic thin film electroluminescent device, which is mainly used for producing an organic thin film electroluminescent device with high brightness, efficiency and long life.

背景技术Background technique

自1987年美国柯达公司的邓青云C.W.Tang等人报导了有机电致发光以来,在全世界范围兴起了一场有机薄膜发光二极管研究热潮。有机薄膜发光二极管具有主动发光、响应快、全固体化、容易实现彩色化和驱动电压低等独特的优越性,是很有潜力的平板显示器,它将取代现在统治市场的液晶显示器。正是由于其在平板显示领域的背景,很多公司、大学和研究单位,投入大量的人力和物力参加到有机电致发光显示当中,世界上有大约80家大的公司参加到有机电致发光产业化的竞争当中,如:几年前日本先峰公司从柯达公司购得专利并制备成矩阵屏,并于98年上市,同年末又推出彩色矩阵屏。飞利浦公司也想抢占市场,利用聚合物制备了比较理想的有机电致发光器件。2000年初摩托罗拉公司已把OLED显示器件用于手机,而年底LG公司亦决定上此项目,并于2001年将1200万片OLED显示器用于手机。中国最大的显像管厂家——彩虹公司已在清华大学投入三千多万人民币来开发OLED,中国航天机电集团公司上海浦东开发中心和上海真空电子集团公司也在分别寻找科研部门方面的投资伙伴共同研究开发OLED。中国在OLED方面比较领先的科研机构有上海大学、清华大学、香港城市大学、吉林大学、长春光机和物理所和北京交通大学、复旦大学等等。而在全世界,从事这一领域研究的课题组,就更不计其数。巨大的投入和不懈的努力得到丰硕的成果。然而高亮度、长寿命和高效率的有机电致发光器件是人们一直梦寐以求的。Since Deng Qingyun C.W.Tang of Kodak Company of the United States reported organic electroluminescence in 1987, there has been an upsurge in the research of organic thin film light-emitting diodes all over the world. Organic thin-film light-emitting diodes have unique advantages such as active light emission, fast response, full solidification, easy colorization, and low driving voltage. They are very potential flat panel displays that will replace the current liquid crystal displays that dominate the market. It is precisely because of its background in the field of flat panel display that many companies, universities and research institutes have invested a lot of manpower and material resources in organic electroluminescent display. There are about 80 large companies in the world participating in the organic electroluminescent industry. In the competition of globalization, for example, Japan's Pioneer Company purchased a patent from Kodak a few years ago and prepared a matrix screen, which was launched in 1998 and launched a color matrix screen at the end of the same year. Philips also wants to seize the market, and has prepared an ideal organic electroluminescent device by using polymers. At the beginning of 2000, Motorola had already used OLED display devices for mobile phones, and at the end of the year, LG also decided to participate in this project, and in 2001, 12 million OLED displays were used in mobile phones. China's largest picture tube manufacturer - Rainbow Company has invested more than 30 million yuan in Tsinghua University to develop OLED. China Aerospace Machinery and Electronics Corporation Shanghai Pudong Development Center and Shanghai Vacuum Electronics Group Corporation are also looking for investment partners in scientific research departments to jointly research Developed OLEDs. China's leading scientific research institutions in OLED include Shanghai University, Tsinghua University, City University of Hong Kong, Jilin University, Changchun Institute of Optics, Mechanics and Physics, Beijing Jiaotong University, Fudan University and so on. In the world, there are countless research groups engaged in research in this field. Huge investment and unremitting efforts have yielded fruitful results. However, organic electroluminescent devices with high brightness, long life and high efficiency are always dreamed by people.

有机电致发光器件虽然发展非常迅速,发展规模也是空前的。但是为了得到高亮度、高效率和长寿命的有机电致发光器件,人们对有机电致发光中的一些问题并没有很好的解决,如由于目前空穴和电子传输层材料和制备工艺的限制,用普通有机电致发光器件的结构:ITO/空穴传输层/有机发光层/背电极,有如下一些问题:发光层与电极之间的互扩散,没有足够高的空穴和电子迁移率,以及注入的空穴与电子不够平衡等。这些问题限制了有机电致发光器件的进一步改善,成为有机电致发光器件发展的重要瓶颈,无法制备性能优异的有机发光器件。Although the development of organic electroluminescent devices is very rapid, the scale of development is also unprecedented. However, in order to obtain high-brightness, high-efficiency and long-life organic electroluminescent devices, some problems in organic electroluminescence have not been well resolved, such as the limitations of current hole and electron transport layer materials and preparation processes. , with the structure of ordinary organic electroluminescent devices: ITO/hole transport layer/organic light-emitting layer/back electrode, there are some problems as follows: mutual diffusion between the light-emitting layer and the electrode, not enough hole and electron mobility , and the injected holes and electrons are not balanced enough. These problems limit the further improvement of organic electroluminescent devices and become an important bottleneck in the development of organic electroluminescent devices, making it impossible to prepare organic light-emitting devices with excellent performance.

发明内容Contents of the invention

本发明所要解决的技术问题:对有机薄膜电致发光器件的结构和电子传输层材料进行改进,从而有效提高有机薄膜电致发光器件的亮度、效率和寿命。The technical problem to be solved by the present invention is to improve the structure of the organic thin film electroluminescent device and the material of the electron transport layer, so as to effectively improve the brightness, efficiency and service life of the organic thin film electroluminescent device.

本发明的技术方案:Technical scheme of the present invention:

本发明是在透明电极上,依次制备空穴传输层、有机发光层、电子传输层、电子电势补偿层和背电极所组成薄膜结构有机电致发光器件,其特征在于:在有机发光层与电子电势补偿层之间加入电子传输层,电子传输层采用宽禁带无机材料。The present invention sequentially prepares a hole-transporting layer, an organic light-emitting layer, an electron-transporting layer, an electron potential compensation layer and a back electrode on a transparent electrode to sequentially prepare an organic electroluminescent device with a film structure, and is characterized in that: the organic light-emitting layer and the electron An electron transport layer is added between the potential compensation layers, and the electron transport layer adopts a wide band gap inorganic material.

发明的有益效果:在有机发光层与电子电势补偿层之间加入无机电子传输层这种结构可以大大改善有机电致发光器件的发光层与电极之间的互扩散,注入的空穴与电子的不够平衡等,使有机电致发光器件的发光亮度、效率和寿命得到提高。Beneficial effects of the invention: the structure of adding an inorganic electron transport layer between the organic light-emitting layer and the electron potential compensation layer can greatly improve the mutual diffusion between the light-emitting layer and the electrode of the organic electroluminescent device, and the injected hole and electron Insufficient balance, etc., so that the luminous brightness, efficiency and life of the organic electroluminescent device are improved.

附图说明Description of drawings

图1一种有机薄膜电致发光器件的结构示意图。Fig. 1 is a schematic structural diagram of an organic thin film electroluminescence device.

图中:透明电极1、空穴传输层2、有机发光层3、无机电子传输层6、电子电势补偿层4和背电极5。In the figure: a transparent electrode 1 , a hole transport layer 2 , an organic light-emitting layer 3 , an inorganic electron transport layer 6 , an electron potential compensation layer 4 and a back electrode 5 .

具体实施方式Detailed ways

以附图为实施方式对本发明作进一步的说明。新型电子传输层有机薄膜电致发光器件,由依次在透明电极1上制备空穴传输层2、有机发光层3、无机电子传输层6、电子电势补偿层4和背电极5所构成。The present invention will be further described by taking the accompanying drawings as embodiments. The novel electron transport layer organic thin film electroluminescent device is composed of a hole transport layer 2, an organic light-emitting layer 3, an inorganic electron transport layer 6, an electron potential compensation layer 4 and a back electrode 5 sequentially prepared on a transparent electrode 1.

电子电势补偿层4采用氟化锂LiF,位于电子传输层6与背电极5之间,电子电势补偿层4的厚度0.2nm~0.6nm。当背电极5与电子传输层6能量匹配时,取消电子电势补偿层4。The electron potential compensation layer 4 is made of lithium fluoride LiF, located between the electron transport layer 6 and the back electrode 5, and the thickness of the electron potential compensation layer 4 is 0.2nm-0.6nm. When the energy of the back electrode 5 and the electron transport layer 6 are matched, the electron potential compensation layer 4 is canceled.

无机电子传输层6采用n型硫化锌ZnS,位于发光层3与电子电势补偿层4之问,无机电子传输层6还可采用其他无机n型宽禁带半导体材料。无机电子传输层6的厚度1nm~10nm。无机n型宽禁带半导体材料:n型硫化锌ZnS、n型氧化锌ZnO、n型氧化钴CoO、n型氮化镓GaN、n型氧化钡BaO、n型氧化镁MgO和n型氮化铝AlN。The inorganic electron transport layer 6 is made of n-type zinc sulfide ZnS, which is located between the light-emitting layer 3 and the electron potential compensation layer 4. The inorganic electron transport layer 6 can also be made of other inorganic n-type wide bandgap semiconductor materials. The thickness of the inorganic electron transport layer 6 is 1 nm to 10 nm. Inorganic n-type wide bandgap semiconductor materials: n-type zinc sulfide ZnS, n-type zinc oxide ZnO, n-type cobalt oxide CoO, n-type gallium nitride GaN, n-type barium oxide BaO, n-type magnesium oxide MgO and n-type nitride Aluminum AlN.

有机发光层3采用有机材料Alq3(8-羟基喹啉铝)。有机发光层3的厚度20nm~60nm。有机发光层3还可采用有机材料:DCJTB(4-(二腈甲基)-2-丁基-6-(1,1,7,7-四甲基久洛呢啶-9-乙烯基)-4H-吡喃)、TBP(四-叔丁基二萘嵌苯)、AND(9,10-二-β-亚萘基蒽)、BALQ(二(2甲基-8-羟基喹啉)-(4-联苯酚)铝)、DCJTI(4-(二腈甲烯基)-2-异丙基-6-(1,1,7,7-四甲基久洛呢啶-9-乙烯基)-4H-吡喃)、DCJTB(4-(二腈甲基)-2-丁基-6-(1,1,7,7-四甲基久洛呢啶-9-乙烯基)-4H-吡喃)、C545T(10-(2-苯并噻唑基)-2,3,6,7-四氢-1,1,7,7-四甲基-1H,5H,11H-(1)-苯并焦吡喃(6,7-8-i,j)喹嗪-11-酮)和DMQA(二甲基喹吖啶酮)。有机发光层3还可采用聚合物:PPV(聚对苯乙炔及其衍生物)。The organic light-emitting layer 3 is made of organic material Alq 3 (8-hydroxyquinoline aluminum). The thickness of the organic light-emitting layer 3 is 20nm-60nm. The organic light-emitting layer 3 can also use an organic material: DCJTB (4-(dinitrile methyl)-2-butyl-6-(1,1,7,7-tetramethyljuronesidine-9-vinyl) -4H-pyran), TBP (tetra-tert-butylperylene), AND (9,10-di-β-naphthylene anthracene), BALQ (di(2-methyl-8-hydroxyquinoline) -(4-biphenol)aluminum), DCJTI (4-(dinitrile methylenyl)-2-isopropyl-6-(1,1,7,7-tetramethyljulonedine-9-ethylene base)-4H-pyran), DCJTB(4-(dinitrile methyl)-2-butyl-6-(1,1,7,7-tetramethyljuronesidine-9-vinyl)- 4H-pyran), C545T(10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-(1 )-benzopyran(6,7-8-i,j)quinazin-11-one) and DMQA (dimethylquinacridone). The organic light-emitting layer 3 can also use a polymer: PPV (poly-p-phenylene vinylene and its derivatives).

空穴传输层2采用有机材料NPB(N,N′-(1-萘基)-N,N′-二苯基-4,4′-联苯二胺)。空穴传输层2的厚度20nm~60nm。空穴传输层2还可采用CBP(4,4′-二(咔唑基-9)联苯)、CuPc(酞青铜)和TPD(N,N’-二(3-甲基苯基)-N,N′-二苯基-4,4′-联苯二胺)。空穴传输层2还可采用聚合物材料PVK(聚乙烯基咔唑)。The hole transport layer 2 uses an organic material NPB (N,N'-(1-naphthyl)-N,N'-diphenyl-4,4'-biphenylenediamine). The hole transport layer 2 has a thickness of 20 nm to 60 nm. The hole transport layer 2 can also adopt CBP (4,4'-two (carbazolyl-9) biphenyl), CuPc (phthalo-bronze) and TPD (N, N'-two (3-methylphenyl)- N,N'-diphenyl-4,4'-biphenylenediamine). The hole transport layer 2 can also use the polymer material PVK (polyvinyl carbazole).

透明电极1采用铟锡氧ITO玻璃。透明电极1还可采用铟锌氧InZnO。The transparent electrode 1 is made of indium tin oxide ITO glass. The transparent electrode 1 can also use indium zinc oxide InZnO.

背电极5采用铝Al。背电极5还可采用镁银合金MgAg。有机薄膜电致发光器件改善了有机电致发光器件的发光层与电极的互扩散、注入的空穴与电子不平衡等,从而有效提高了有机薄膜电致发光器件的亮度、效率和寿命。Aluminum Al is used for the back electrode 5 . The back electrode 5 can also use magnesium-silver alloy MgAg. The organic thin film electroluminescent device improves the interdiffusion between the light-emitting layer and the electrode of the organic electroluminescent device, the imbalance of injected holes and electrons, etc., thereby effectively improving the brightness, efficiency and life of the organic thin film electroluminescent device.

Claims (3)

1. an electroluminescent device of organic thin film constitutes by prepare hole transmission layer, organic luminous layer, electron transfer layer, electron potential layer of compensation and back electrode successively on the transparency electrode substrate; It is characterized in that: between organic luminous layer (3) and electron potential layer of compensation (4), add inorganic electronic transport layer (6) by n type ZnS or n type ZnO preparation.
2. a kind of electroluminescent device of organic thin film according to claim 1 is characterized in that: electron transfer layer (6) can also adopt other n molded breadth forbidden band inorganic material: n type CoO, n type GaN, n type BaO, n type MgO or n type AlN.
3. novel electron transport layer electroluminescent device of organic thin film according to claim 1 is characterized in that: the thickness 1nm-10nm of inorganic electronic transport layer (6).
CNB2005100122122A 2005-07-18 2005-07-18 An organic thin film electroluminescent device Expired - Fee Related CN100366127C (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100508242C (en) * 2006-02-06 2009-07-01 友达光电股份有限公司 Organic Electroluminescent Devices
CN102916135A (en) * 2011-08-05 2013-02-06 海洋王照明科技股份有限公司 Inverted organic light-emitting device and preparation method thereof
CN102983280A (en) * 2011-09-07 2013-03-20 海洋王照明科技股份有限公司 Organic electroluminescence device and preparation method thereof
CN103367653A (en) * 2013-07-10 2013-10-23 上海和辉光电有限公司 Inversion type organic light emitting diode display device and manufacturing method thereof
CN111384244A (en) * 2018-12-27 2020-07-07 Tcl集团股份有限公司 Quantum dot light-emitting diode and preparation method thereof
CN113540386A (en) * 2021-07-13 2021-10-22 齐鲁工业大学 Perovskite light-emitting diode with GaN semiconductor material as electron transport layer and preparation method thereof

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JP4215476B2 (en) * 2001-09-25 2009-01-28 三洋電機株式会社 Organic electroluminescence device
US20050123794A1 (en) * 2003-12-05 2005-06-09 Deaton Joseph C. Organic electroluminescent devices
CN2710303Y (en) * 2004-07-13 2005-07-13 北京交通大学 Organic film electroluminescent device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100508242C (en) * 2006-02-06 2009-07-01 友达光电股份有限公司 Organic Electroluminescent Devices
CN102916135A (en) * 2011-08-05 2013-02-06 海洋王照明科技股份有限公司 Inverted organic light-emitting device and preparation method thereof
CN102983280A (en) * 2011-09-07 2013-03-20 海洋王照明科技股份有限公司 Organic electroluminescence device and preparation method thereof
CN103367653A (en) * 2013-07-10 2013-10-23 上海和辉光电有限公司 Inversion type organic light emitting diode display device and manufacturing method thereof
CN103367653B (en) * 2013-07-10 2016-02-03 上海和辉光电有限公司 Inversion type organic light emitting diodde desplay device and preparation method thereof
CN111384244A (en) * 2018-12-27 2020-07-07 Tcl集团股份有限公司 Quantum dot light-emitting diode and preparation method thereof
CN111384244B (en) * 2018-12-27 2021-05-28 Tcl科技集团股份有限公司 Quantum dot light-emitting diode and preparation method thereof
CN113540386A (en) * 2021-07-13 2021-10-22 齐鲁工业大学 Perovskite light-emitting diode with GaN semiconductor material as electron transport layer and preparation method thereof
CN113540386B (en) * 2021-07-13 2022-04-05 齐鲁工业大学 A kind of perovskite light-emitting diode with GaN semiconductor material as electron transport layer and preparation method thereof

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