CN1719338B - Ultraviolet ray solidification cation type etching glue for nano embossing - Google Patents
Ultraviolet ray solidification cation type etching glue for nano embossing Download PDFInfo
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Abstract
本发明公开的纳米压印用紫外光固化阳离子型刻蚀胶,按重量百分比,其组成为:脂环族环氧10%~60%,有机硅环氧树脂0%~30%,乙烯基醚10%~40%,聚己内酯多元醇0%~20%,长链脂肪族环氧0%~15%,光引发剂1%~10%,助剂0%~8%,各组分的重量之和为100%,其中,光引发剂选自以下一种或一种以上的组合物:二芳基碘鎓磷酸盐、三芳基硫鎓六氟锑酸盐或三芳基硫鎓六氟砷酸盐,助剂包括有机硅烷类偶联剂、有机硅烷类流平剂、有机醇类或聚醚烷基共改性硅油消泡剂。本发明的刻蚀胶与目前微电子行业所使用的正性或负性胶相比较,具有无挥发性溶剂、低粘度、固化速度快、低收缩、高附着力、高抗蚀性,是纳米压印制造专用光固化刻蚀胶。
The UV-curable cationic etching glue for nanoimprinting disclosed by the present invention is composed of: 10%-60% of cycloaliphatic epoxy, 0%-30% of silicone epoxy resin, and vinyl ether 10%-40%, polycaprolactone polyol 0%-20%, long-chain aliphatic epoxy 0%-15%, photoinitiator 1%-10%, additives 0%-8%, each component The sum of the weights is 100%, wherein the photoinitiator is selected from one or more of the following compositions: diaryl iodonium phosphate, triaryl sulfonium hexafluoroantimonate or triaryl sulfonium hexafluoro Arsenate, additives include organosilane coupling agent, organosilane leveling agent, organic alcohol or polyether alkyl co-modified silicone oil defoamer. Compared with the positive or negative glue used in the current microelectronics industry, the etching glue of the present invention has no volatile solvent, low viscosity, fast curing speed, low shrinkage, high adhesion, and high corrosion resistance. Photocurable etchant for imprint manufacturing.
Description
技术领域technical field
本发明涉及一种刻蚀胶,特别涉及一种纳米压印制造中使用的紫外光固化阳离子型刻蚀胶。The invention relates to an etching glue, in particular to an ultraviolet light curing cationic etching glue used in the manufacture of nano imprinting.
背景技术Background technique
传统的光刻法集成电路制作工艺中,采用掩模曝光法在光刻胶的指定区域形成集成电路的形状或反型,其所使用的光刻胶是正性光刻胶或负性光刻胶,为了便于形成一定厚度的薄膜,正性或负性光刻胶都含有挥发性溶剂,在涂覆成膜后需要进行烘干挥发性溶剂的工艺处理。但在纳米压印制造微细特征(包括集成电路)工艺中,正性或负性光刻胶由于含挥发性溶剂、收缩大等缺点已经完全不能适用。In the traditional photolithographic integrated circuit manufacturing process, the shape or inversion of the integrated circuit is formed in the designated area of the photoresist by mask exposure method. The photoresist used is positive photoresist or negative photoresist. , in order to facilitate the formation of a certain thickness of the film, the positive or negative photoresist contains volatile solvents, after the film is coated, it is necessary to dry the volatile solvents. However, in the process of manufacturing fine features (including integrated circuits) by nanoimprinting, positive or negative photoresists are completely unsuitable due to their shortcomings such as volatile solvents and large shrinkage.
纳米压印制造微细特征(包括集成电路)是首先在基材(多晶硅或其它材料)上涂覆一层液态光固化刻蚀胶,然后将刻有微细特征(100-500纳米)的透明石英模板下压在液体刻蚀胶上,等到液体刻蚀胶完全被挤压到具有微细特征的微型腔内后,用紫外光进行照射曝光,经紫外光照射后液体刻蚀胶发生光聚合反应而固化,从而在刻蚀胶上形成与微模具特征对应的反型微细特征,然后启模并对脱模后的刻蚀胶进行等离子刻蚀,将微细特征转移至基材上形成具有单层结构的集成电路或微细特征。在该过程中,由于传统光刻胶(正性或负性光刻胶)都含有挥发性溶剂,涂覆后微模具下压将挥发性溶剂封闭在微型腔内,曝光固化时会产生气泡或使固化强度变低,从而使复型精度变差;如果涂覆后进行后烘处理来使溶剂挥发,经后烘处理的刻蚀胶经变为固体或半固体,透明石英微模具的下压过程基本不可能将固体或半固体刻蚀胶挤压进微细特征型腔,因而传统刻蚀胶不适用纳米压印制造工艺。To manufacture fine features (including integrated circuits) by nanoimprinting, first coat a layer of liquid photocurable etchant on the substrate (polysilicon or other materials), and then engrave the transparent quartz template with fine features (100-500 nanometers) Press down on the liquid etching glue, wait until the liquid etching glue is completely squeezed into the microcavity with fine features, and then irradiate and expose with ultraviolet light. After being irradiated by ultraviolet light, the liquid etching glue undergoes photopolymerization and solidifies , so as to form the inverse micro-features corresponding to the micro-mold features on the etchant, and then open the mold and perform plasma etching on the stripped etchant, and transfer the micro-features to the substrate to form a single-layer structure. integrated circuits or microfeatures. In this process, since traditional photoresists (positive or negative photoresist) contain volatile solvents, after coating, the micro-mold is pressed down to seal the volatile solvents in the microcavity, and bubbles or bubbles will be generated during exposure and curing. The curing strength becomes lower, so that the accuracy of the replica becomes worse; if post-baking treatment is performed after coating to volatilize the solvent, the etching glue after post-baking treatment becomes solid or semi-solid, and the pressure of the transparent quartz micro-mold It is basically impossible to squeeze the solid or semi-solid etchant into the micro-featured cavity during the process, so the traditional etchant is not suitable for the nanoimprint manufacturing process.
发明内容Contents of the invention
本发明的目的在于提供一种纳米压印用紫外光固化阳离子型刻蚀胶,解决了在纳米压印制造工艺中,传统刻蚀胶易产生气泡或使固化强度变低,从而使复型精度变差或不能充分挤压进模具微细特征型腔的问题。The purpose of the present invention is to provide a UV-curable cationic etchant for nanoimprinting, which solves the problem that in the nanoimprint manufacturing process, the traditional etchant tends to generate bubbles or reduce the curing strength, thereby reducing the precision of the replica. Problems with poor or insufficient extrusion into the fine feature cavities of the mold.
本发明所采用的技术方案是,纳米压印用紫外光固化阳离子型刻蚀胶,按重量百分比,其组成为:The technical scheme adopted in the present invention is that the UV-curable cationic etching glue for nanoimprinting is composed of:
脂环族环氧10%~60%;Alicyclic epoxy 10% ~ 60%;
γ-缩水甘油醚氧丙基三甲氧基硅烷3%或β-(3,4环氧环己基)-乙基三甲氧基硅烷10%;γ-glycidyl etheroxypropyltrimethoxysilane 3% or β-(3,4 epoxycyclohexyl)-ethyltrimethoxysilane 10%;
乙烯基醚10%~40%;Vinyl ether 10% ~ 40%;
聚己内酯二元醇或聚己内酯三元醇10%,或者聚己内酯三元醇20%;Polycaprolactone diol or polycaprolactone triol 10%, or polycaprolactone triol 20%;
1,2-环氧基十二烷5%;1,2-epoxydodecane 5%;
光引发剂1%~10%;Photoinitiator 1% ~ 10%;
助剂0%~8%;各组分的重量之和为100%,Auxiliary 0% ~ 8%; the sum of the weight of each component is 100%,
其中,光引发剂选自以下一种或一种以上的组合物:二芳基碘鎓磷酸盐、三芳基硫鎓六氟锑酸盐或三芳基硫鎓六氟砷酸盐,Wherein, the photoinitiator is selected from one or more of the following compositions: diaryl iodonium phosphate, triaryl sulfonium hexafluoroantimonate or triaryl sulfonium hexafluoroarsenate,
助剂包括有机硅烷类偶联剂、有机硅烷类流平剂、有机醇类或聚醚烷基共改性硅油消泡剂。Auxiliaries include organosilane coupling agent, organosilane leveling agent, organic alcohol or polyether alkyl co-modified silicone oil defoamer.
本发明的特点还在于:The present invention is also characterized in that:
脂环族环氧选自以下一种或一种以上的组合物:3,4-环氧基环己基甲酸-3′,4′-环氧基环己基甲酯,双-(3,4-环氧基环己基)-己二酸酯,二氧化双环戊二烯,3,4-环氧基-6-甲基-环己基甲酸-3′,4′-环氧基-6′-甲基环己基甲酯,α-二氧化双环戊基醚,β-二氧化双环戊基醚,二 氧化双环戊二烯乙二醇醚或乙烯环己烯一氧化物。Alicyclic epoxy is selected from the following one or more combinations: 3,4-epoxy cyclohexyl carboxylate-3',4'-epoxy cyclohexyl methyl ester, bis-(3,4- Epoxycyclohexyl)-adipate, dicyclopentadiene dioxide, 3,4-epoxy-6-methyl-cyclohexylcarboxylate-3′,4′-epoxy-6′-methanol Dicyclohexyl methyl ester, α-dicyclopentyl ether, β-dicyclopentyl ether, dicyclopentadiene glycol ether or vinylcyclohexene monoxide.
有机硅环氧树脂选自以下一种或一种以上的组合物:线形、体形聚二甲基硅氧烷改性双环己烷环氧,β-(3,4环氧环己基)-乙基三甲氧基硅烷,γ-缩水甘油醚氧丙基三甲氧基硅烷。Silicone epoxy resin is selected from one or more of the following compositions: linear polydimethylsiloxane modified dicyclohexyl epoxy, β-(3,4 epoxycyclohexyl)-ethyl Trimethoxysilane, gamma-glycidoxypropyltrimethoxysilane.
乙烯基醚选自以下一种或一种以上的组合物:三甘醇二乙烯基醚,1,4-环己基二甲醇二乙烯基醚,甘油碳酸酯丙烯基醚或十二烷基乙烯基醚。Vinyl ether is selected from the following one or a combination of more than one: triethylene glycol divinyl ether, 1,4-cyclohexyl dimethanol divinyl ether, glycerol carbonate propenyl ether or dodecyl vinyl ether ether.
聚己内酯多元醇为聚己内酯二元醇或聚己内酯三元醇。Polycaprolactone polyol is polycaprolactone diol or polycaprolactone triol.
长链脂肪族环氧为1,2-环氧基十六烷或1,2-环氧基十二烷。The long-chain aliphatic epoxy is 1,2-epoxyhexadecane or 1,2-epoxydodecane.
本发明纳米压印用紫外光固化阳离子型刻蚀胶具有以下性能:The UV-curable cationic etching glue for nanoimprinting of the present invention has the following properties:
1.低粘度,便于旋涂涂覆工艺操作形成1微米以下的薄膜。1. Low viscosity, easy to spin coating process operation to form a film below 1 micron.
2.低收缩,保证固化过程中的最小变形量,小变形可以保证高的复型精度。2. Low shrinkage ensures minimum deformation during curing, and small deformation can ensure high replication accuracy.
3.高固化速度,可以保证高的纳米压印复型效率。3. High curing speed can ensure high nanoimprint replication efficiency.
4.成膜稳定性好,薄膜均匀,保证压印复型精度和效率。4. The stability of film formation is good, and the film is uniform, which ensures the accuracy and efficiency of imprinting and replicating.
5.附着性好,可以使刻蚀时基材得到较好的保护,经刻蚀后微细特征不失型。5. Good adhesion, which can better protect the substrate during etching, and the fine features will not lose their shape after etching.
6.抗蚀性好,可以提高基材的刻蚀效率,保证刻蚀精度。6. Good corrosion resistance, which can improve the etching efficiency of the substrate and ensure the etching accuracy.
附图说明Description of drawings
图1是纳米压印制造微细特征工艺原理图,其中a是石英模板的下压过程,b是刻蚀胶固化成型过程,c是脱模后的形状。Figure 1 is a schematic diagram of the micro-feature manufacturing process by nanoimprinting, in which a is the pressing process of the quartz template, b is the curing and molding process of the etching glue, and c is the shape after demoulding.
图2是刻蚀胶经压印后的形状。Figure 2 is the shape of the etchant after embossing.
图中,1.石英模板,2.微细型腔,3.刻蚀胶,4.硅圆片。In the figure, 1. Quartz template, 2. Micro-cavity, 3. Etching glue, 4. Silicon wafer.
具体实施方式Detailed ways
下面结合附图和具体实施方式对本发明进行详细说明。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
本发明的纳米压印用紫外光固化阳离子型刻蚀胶,按重量百分比,其组成为:脂环族环氧10%~60%,有机硅环氧树脂0%~30%,乙烯基醚10%~40%,聚己内酯多元醇0%~20%,长链脂肪族环氧0%~15%,光引发剂1%~10%,助剂0%~8%,各组分的重量之和为100%,其中,光引发剂选自以下一种或一种以上的组合物:二芳基碘鎓磷酸盐、三芳基硫鎓六氟锑酸盐或三芳基硫鎓六氟砷酸盐,助剂包括有机硅烷类偶联剂、有机硅烷类流平剂、有机醇类或聚醚烷基改性硅油消泡剂。The UV-curable cationic etching glue for nanoimprinting of the present invention is composed of: 10%-60% of alicyclic epoxy resin, 0%-30% of silicone epoxy resin, and 10% of vinyl ether. %~40%, polycaprolactone polyol 0%~20%, long chain aliphatic epoxy 0%~15%, photoinitiator 1%~10%, additive 0%~8%, each component The sum of the weights is 100%, wherein the photoinitiator is selected from one or more than one of the following compositions: diaryl iodonium phosphate, triaryl sulfonium hexafluoroantimonate or triaryl sulfonium hexafluoroarsenic Acid salts, additives include organosilane coupling agent, organosilane leveling agent, organic alcohol or polyether alkyl modified silicone oil defoamer.
本发明刻蚀胶中的脂环族环氧和有机硅环氧树脂是成膜物质,是决定紫外光固化刻蚀胶物理机械性能的主要组份,对刻蚀胶的许多重要性能,如刚度、粘度、固化速度、附着力、柔韧性、抗水性、抗蚀性能等有很大的影响。脂环族环氧由于含有与饱和脂肪六元环相连的环氧基而具有较大的开环张力,可以进行阳离子开环聚合反应,由于饱和六元脂环存在,可以赋予刻蚀胶较好的硬度和抗刻蚀性,通过调整脂环之间的链段结构,使刻蚀胶同时具有一定的柔韧性,便于固化后脱模时不会造成微细特征部分的脆断。本发明中脂环族环氧选自以下一种或一种以上的组合物:3,4-环氧基环己基甲酸-3′,4′-环氧基环己基甲酯,双-(3,4-环氧基环己基)-己二酸酯,二氧化双环戊二烯,3,4-环氧基-6-甲基-环己基甲酸-3′,4′-环氧基-6′-甲基环己基甲酯,α-二氧化双环戊基醚,β-二氧化双环戊基醚,二氧化双环戊二烯乙二醇醚或乙烯环己烯一氧化物,选择一种以上组合物时,各组分之间没有含量比例的要求,只要总含量在刻蚀胶中的比例满足10%~60%即可。The cycloaliphatic epoxy and silicone epoxy resin in the etching glue of the present invention are film-forming substances, and are the main components that determine the physical and mechanical properties of the UV-curable etching glue. , Viscosity, curing speed, adhesion, flexibility, water resistance, corrosion resistance, etc. have a great influence. Alicyclic epoxy has a large ring-opening tension due to the epoxy group connected to the saturated aliphatic six-membered ring, and can undergo cationic ring-opening polymerization. Due to the existence of the saturated six-membered alicyclic ring, it can endow the etchant with better Excellent hardness and etching resistance, by adjusting the chain segment structure between the alicyclic rings, the etching glue has a certain degree of flexibility at the same time, which is convenient for demoulding after curing without causing brittle fracture of fine features. Among the present invention, cycloaliphatic epoxy is selected from the following one or more compositions: 3,4-epoxy cyclohexyl formic acid-3', 4'-epoxy cyclohexyl methyl ester, bis-(3 , 4-epoxycyclohexyl)-adipate, dicyclopentadiene dioxide, 3,4-epoxy-6-methyl-cyclohexylcarboxylate-3′,4′-epoxy-6 '-Methylcyclohexyl methyl ester, α-dicyclopentyl ether, β-dicyclopentyl ether, dicyclopentadiene glycol ether or ethylene cyclohexene monoxide, choose more than one In the composition, there is no content ratio requirement among the components, as long as the ratio of the total content in the etchant satisfies 10% to 60%.
有机硅环氧树脂也具有环氧键而可以发生阳离子开环聚合反应,同时由 于硅氧键的存在可以赋予刻蚀胶较低的表面能,使刻蚀胶在被压印定型过程及脱模时,刻蚀胶与微模具之间的粘附作用小而便于脱模,同时也可以提高模具使用次数和寿命。脂环族环氧和有机硅环氧发生开环聚合,聚合过程是从共价键到共价键的转变,因而具有体积收缩小的特点。本发明中有机硅环氧树脂选自以下一种或一种以上的组合物:线形、体形聚二甲基硅氧烷改性双环己烷环氧,β-(3,4环氧环己基)-乙基三甲氧基硅烷,γ-缩水甘油醚氧丙基三甲氧基硅烷,选择一种以上组合物时,各组分之间没有含量比例的要求。Silicone epoxy resin also has epoxy bonds and can undergo cationic ring-opening polymerization. At the same time, due to the presence of silicon-oxygen bonds, it can endow the etchant with a lower surface energy, so that the etchant can be imprinted and shaped during the process of being stamped and detached. When molding, the adhesion between the etchant and the micro-mold is small, which is convenient for demolding, and can also improve the number of times and life of the mold. Cycloaliphatic epoxy and silicone epoxy undergo ring-opening polymerization, and the polymerization process is a transformation from covalent bond to covalent bond, so it has the characteristics of small volume shrinkage. In the present invention, the organosilicon epoxy resin is selected from one or more of the following compositions: linear and bulk polydimethylsiloxane modified dicyclohexyl epoxy, β-(3,4 epoxycyclohexyl) -Ethyltrimethoxysilane, γ-glycidyloxypropyltrimethoxysilane, when more than one composition is selected, there is no requirement for the content ratio of each component.
乙烯基醚具有的烯醚基结构使其可以进行阳离子光聚合反应,同时由于乙烯基醚具有很低的粘度而具有较好的稀释效果,可以使刻蚀胶具有较低的粘度,从而便于进行旋涂的匀胶工艺,形成亚微米级薄膜。本发明中乙烯基醚选自以下一种或一种以上的组合物:三甘醇二乙烯基醚,1,4-环己基二甲醇二乙烯基醚,甘油碳酸酯丙烯基醚或十二烷基乙烯基醚,选择一种以上组合时,各组分之间也没有含量比例的要求。The vinyl ether group structure allows it to undergo cationic photopolymerization. At the same time, because vinyl ether has a very low viscosity and has a good dilution effect, it can make the etchant have a lower viscosity, which is convenient for processing. Spin-coating uniform coating process to form sub-micron films. In the present invention, vinyl ether is selected from the following one or more compositions: triethylene glycol divinyl ether, 1,4-cyclohexyl dimethanol divinyl ether, glycerol carbonate propenyl ether or dodecane Base vinyl ether, when more than one combination is selected, there is no requirement for the content ratio between the components.
聚己内酯多元醇中具有羟基,因而可以参与阳离子聚合反应,同时聚己内酯多元醇可以赋予刻蚀胶很好的韧性和提高交联程度,从而使刻蚀胶具有硬而韧的特点,提高刻蚀胶的抗蚀性。本发明中聚己内酯多元醇优选聚己内酯二元醇或聚己内酯三元醇。Polycaprolactone polyol has hydroxyl groups, so it can participate in cationic polymerization reaction. At the same time, polycaprolactone polyol can endow the etchant with good toughness and improve the degree of crosslinking, so that the etchant has the characteristics of hard and tough , Improve the corrosion resistance of the etchant. The polycaprolactone polyol in the present invention is preferably polycaprolactone diol or polycaprolactone triol.
长链脂肪族环氧具有一个环氧基,属于单官能团的活性单体,可以发生阳离子开环反应,分子中长的脂肪链赋予刻蚀胶很好的柔韧性和铺平性,同时它所具有的低粘度还可以起稀释作用,降低刻蚀胶的粘度。本发明中长链脂肪族环氧优选1,2-环氧基十六烷或1,2-环氧基十二烷。Long-chain aliphatic epoxy has an epoxy group, which is a monofunctional active monomer, and can undergo cationic ring-opening reaction. The long aliphatic chain in the molecule endows the etchant with good flexibility and flatness. The low viscosity can also act as a diluent to reduce the viscosity of the etchant. The long-chain aliphatic epoxy in the present invention is preferably 1,2-epoxyhexadecane or 1,2-epoxydodecane.
光引发剂在光固化刻蚀胶中用量很小,但对刻蚀胶的固化速度、储存稳 定性等有很大的影响。本发明采用二芳基碘鎓磷酸盐,三芳基硫鎓六氟锑酸盐或三芳基硫鎓六氟砷酸盐中一种或一种以上的组合物,该组合物中没有含量比例的要求。The photoinitiator is used in a small amount in the photocurable resist, but it has a great influence on the curing speed and storage stability of the resist. The present invention adopts one or more compositions of diaryl iodonium phosphate, triaryl sulfonium hexafluoroantimonate or triaryl sulfonium hexafluoroarsenate, and there is no content ratio requirement in the composition .
助剂在刻蚀胶中起到消除气泡、形成薄膜平整以及稳态薄膜的作用。本发明的助剂包括有机硅烷类偶联剂、有机硅烷类流平剂、有机醇类或聚醚烷基改性硅油消泡剂,助剂中还可以加入抗氧剂和热稳定剂等。Auxiliaries play the role of eliminating bubbles in the etchant, forming a flat film and a stable film. The auxiliary agent of the present invention includes organosilane coupling agent, organosilane leveling agent, organic alcohol or polyether alkyl modified silicone oil defoamer, and antioxidant and thermal stabilizer can also be added to the auxiliary agent.
制作本发明的刻蚀胶时,首先选择光引发剂的组分:二芳基碘鎓磷酸盐、三芳基硫鎓六氟锑酸盐或三芳基硫鎓六氟砷酸盐中一种或一种以上的组合物,控制光引发剂占到总刻蚀胶重量的1%~10%,当引发剂中含二芳基碘鎓磷酸盐时,将二芳基碘鎓磷酸盐在50℃下用乙烯基醚溶解,溶解完之后冷却至室温,再将三芳基硫鎓六氟锑酸盐或三芳基硫鎓六氟砷酸盐加入并搅拌均匀,乙烯基醚用量为总重量比的10%~40%,形成均匀溶液A;将总重量比分别为10%~60%的脂环族环氧 0%~30%的有机硅环氧树脂 0%~20%的聚己内酯多元醇 0%~15%的长链脂肪族环氧加入装置中高速搅拌,搅拌混合2小时后形成均匀液体B,然后加入溶液A,再混合搅拌2小时得到均匀液体C,之后边搅拌边依次加入总重量比为0%~8%的消泡剂、流平剂、偶联剂等助剂,加完助剂后再搅拌2小时即得到纳米压印用紫外光固化阳离子型刻蚀胶。When making the resist of the present invention, at first select the component of photoinitiator: one or one of diaryl iodonium phosphate, triaryl sulfonium hexafluoroantimonate or triaryl sulfonium hexafluoroarsenate More than one composition, the photoinitiator is controlled to account for 1% to 10% of the total etching glue weight. When the initiator contains diaryliodonium phosphate, the diaryliodonium phosphate is heated at 50 ° C. Dissolve with vinyl ether, cool to room temperature after dissolving, then add triarylsulfonium hexafluoroantimonate or triarylsulfonium hexafluoroarsenate and stir evenly, the amount of vinyl ether is 10% of the total weight ratio ~40% to form a homogeneous solution A; the total weight ratio of 10% to 60% of cycloaliphatic epoxy 0%~30% silicone epoxy resin 0%~20% polycaprolactone polyol Add 0% to 15% long-chain aliphatic epoxy into the device and stir at high speed. After stirring and mixing for 2 hours, a uniform liquid B is formed, then add solution A, and mix and stir for another 2 hours to obtain a uniform liquid C. Then add the total solution while stirring. The weight ratio is 0%-8% of additives such as defoaming agent, leveling agent, coupling agent, etc. After adding the additives, it is stirred for 2 hours to obtain the UV-curable cationic etching glue for nanoimprinting.
图1显示的是纳米压印制造微细特征的工艺原理图。基材选用硅圆片4,将刻蚀胶3均匀旋涂或喷涂在硅圆片4,然后将刻有微细特征(100-500纳米)的透明石英模板1下压在液体刻蚀胶3上,等到液体刻蚀胶3完全被挤压到具有微细特征的微细型腔2的微腔内后,用紫外光进行照射曝光0.1秒~1秒,经紫外光照射后液体刻蚀胶3发生光聚合反应而固化,从而在刻 蚀胶3上形成与压印模具2特征对应的反型微细特征,然后启模并对脱模后的刻蚀胶3进行等离子刻蚀,将微细特征转移至硅圆片4上形成具有单层结构的集成电路或微细特征。Figure 1 shows a schematic diagram of the process of manufacturing fine features by nanoimprinting. The base material is a silicon wafer 4, and the etchant 3 is uniformly spin-coated or sprayed on the silicon wafer 4, and then the transparent quartz template 1 engraved with fine features (100-500 nanometers) is pressed down on the liquid etchant 3 After the liquid etchant 3 is completely squeezed into the microcavity of the microcavity 2 with fine features, it is irradiated and exposed with ultraviolet light for 0.1 second to 1 second, and the liquid etchant 3 emits light after being irradiated by ultraviolet light. Polymerization reaction and solidification, thereby forming on the etchant 3 the anti-type fine features corresponding to the characteristics of the imprint mold 2, and then opening the mold and performing plasma etching on the stripped etchant 3 to transfer the fine features to the silicon Integrated circuits or fine features having a single-layer structure are formed on the wafer 4 .
实施例1Example 1
首先选取二芳基碘鎓磷酸盐和三芳基硫鎓六氟锑酸盐的混合物做光引发剂,光引发剂的重量为总刻蚀胶重量的3%,其中二芳基碘鎓磷酸盐占光引发剂的70%,三芳基硫鎓六氟锑酸盐占光引发剂的30%,取总重15%的三甘醇二乙烯基醚,将光引发剂二芳基碘鎓磷酸盐在50℃下用三甘醇二乙烯基醚溶解,冷却至室温后加入三芳基硫鎓六氟锑酸盐搅拌,形成均匀溶液A;分别将总重比为53.6%的3,4-环氧基环己甲酸-3′,4′-环氧基环己基甲酯 15%的线性聚二甲基硅氧烷 10%的聚己内酯二元醇加入装置中高速搅拌,搅拌混合2小时后形成均匀液体B,然后加入溶液A,再混合搅拌2小时得到均匀液体C,之后边搅拌边加入总重量比分别为0.4%的有机醇消泡剂、1%的聚醚改性二甲基硅氧烷流平剂、2%的有机硅烷类偶联剂助剂,加完助剂后再搅拌2小时即得到纳米压印用紫外光固化阳离子型刻蚀胶。First choose the mixture of diaryliodonium phosphate and triarylsulfonium hexafluoroantimonate as photoinitiator, the weight of photoinitiator is 3% of total etching glue weight, wherein diaryliodonium phosphate accounts for 70% of photoinitiator, triarylsulfonium hexafluoroantimonate accounts for 30% of photoinitiator, gets the triethylene glycol divinyl ether of gross weight 15%, photoinitiator diaryliodonium phosphate is in Dissolve in triethylene glycol divinyl ether at 50°C, add triarylsulfonium hexafluoroantimonate after cooling to room temperature and stir to form a homogeneous solution A; 3′,4′-epoxycyclohexylmethyl cyclohexanecarboxylate 15% linear polydimethylsiloxane Add 10% polycaprolactone diol into the device and stir at high speed, stir and mix for 2 hours to form a uniform liquid B, then add solution A, and mix and stir for 2 hours to obtain a uniform liquid C, then add the total weight ratio while stirring 0.4% of organic alcohol defoamer, 1% of polyether modified dimethyl siloxane leveling agent, 2% of organic silane coupling agent auxiliary agent, after adding the auxiliary agent, stir for 2 hours to obtain UV-curable cationic resists for nanoimprinting.
实施例2Example 2
首先选择总重量比分别为1%二芳基碘鎓磷酸盐和1%三芳基硫鎓六氟砷酸盐的混合物做光引发剂,将光引发剂二芳基碘鎓磷酸盐在50℃下用1,4-环己基二甲醇二乙烯基醚溶解,1,4-环己基二甲醇二乙烯基醚用量为总重量比的10%,溶解后冷却至室温并加入三芳基硫鎓六氟砷酸盐搅拌,形成均匀溶液A;将总重量比分别为40%的3,4-环氧基环己甲酸-3′,4′-环氧基环己基甲酯和20%的双-(3,4-环氧基环己基)-己二酸酯的混合物 20%的聚己内酯三元醇加入装置中高速搅拌,搅拌混合2小时后形成均匀液体B,然后加入溶液A,再混合搅拌2小时得到均匀液体C,之后边搅拌边加入总重量比为8%的聚醚烷基共改性硅油消泡剂、流平剂和偶联剂助剂,加 完助剂后再搅拌2小时即得到纳米压印用紫外光固化阳离子型刻蚀胶。Firstly, the mixture of 1% diaryliodonium phosphate and 1% triarylsulfonium hexafluoroarsenate is selected as the photoinitiator in the total weight ratio, and the photoinitiator diaryliodonium phosphate is heated at 50° C. Dissolve with 1,4-cyclohexyldimethanol divinyl ether, the amount of 1,4-cyclohexyldimethanol divinyl ether is 10% of the total weight ratio, after dissolving, cool to room temperature and add triarylsulfonium hexafluoroarsenic Acid acid salt is stirred to form a homogeneous solution A; the total weight ratio is respectively 40% of 3,4-epoxy cyclohexanecarboxylic acid-3',4'-epoxy cyclohexyl methyl ester and 20% of bis-(3 , a mixture of 4-epoxycyclohexyl)-adipate Add 20% polycaprolactone trihydric alcohol into the device and stir at a high speed. After stirring and mixing for 2 hours, a uniform liquid B is formed, then add solution A, and then mix and stir for 2 hours to obtain a uniform liquid C. Then add the total weight ratio while stirring. 8% polyether alkyl co-modified silicone oil defoamer, leveling agent and coupling agent auxiliary agent, after adding the auxiliary agent, stir for 2 hours to obtain the UV-curable cationic etching glue for nanoimprinting.
实施例3Example 3
首先选择总重量比分别为0.2%二芳基碘鎓磷酸盐和0.8%三芳基硫鎓六氟锑酸盐的混合物做光引发剂,将二芳基碘鎓磷酸盐光引发剂在50℃下用甘油碳酸酯丙烯基醚和十二烷基乙烯基醚的混合液溶解,甘油碳酸酯丙烯基醚和十二烷基乙烯基醚的混合液为总重量比的40%,溶解完后冷却至室温并加入三芳基硫鎓六氟锑酸盐搅拌,形成均匀溶液A;将总重量比分别为10%的3,4-环氧基-6-甲基-环己基甲酸-3′,4′-环氧基-6′-甲基环己基甲酯和30%的体性聚二甲基硅氧烷 15%的1,2-环氧基十六烷放入装置中高速搅拌,搅拌混合2小时后形成均匀液体B,然后加入溶液A,再混合搅拌2小时得到均匀液体C,之后边搅拌边加入总重量比为4%的助剂,助剂包括聚醚烷基共改性硅油消泡剂、流平剂、偶联剂、抗氧化剂和热稳定剂,加完助剂后再搅拌2小时即得到纳米压印用紫外光固化阳离子型刻蚀胶。First select the mixture of 0.2% diaryl iodonium phosphate and 0.8% triaryl sulfonium hexafluoroantimonate as the photoinitiator in the total weight ratio, and make the diaryl iodonium phosphate photoinitiator at 50°C Dissolve with the mixed solution of glycerol carbonate propenyl ether and dodecyl vinyl ether, the mixed solution of glycerol carbonate propenyl ether and dodecyl vinyl ether is 40% of the total weight ratio, after dissolving, cool to Stir at room temperature and add triarylsulfonium hexafluoroantimonate to form a homogeneous solution A; 3,4-epoxy-6-methyl-cyclohexylcarboxylic acid-3', 4' with a total weight ratio of 10% - Epoxy-6'-methylcyclohexyl methyl ester and 30% bulk dimethicone Put 15% 1,2-epoxyhexadecane into the device and stir at a high speed. After stirring and mixing for 2 hours, a uniform liquid B is formed, then add solution A, and mix and stir for 2 hours to obtain a uniform liquid C, and then add it while stirring The total weight ratio is 4% auxiliary agent, which includes polyether alkyl co-modified silicone oil defoamer, leveling agent, coupling agent, antioxidant and heat stabilizer, and after adding the auxiliary agent, stir for 2 hours. The UV-curable cationic etching glue for nanoimprinting is obtained.
实施例4Example 4
将总重量比为10%的二芳基碘鎓磷酸盐光引发剂在50℃下用十二烷基乙烯基醚溶解,十二烷基乙烯基醚用量为总重量比的30%,形成均匀溶液A;将总重量比分别为35%的β-二氧化双环戊基醚和10%的β-(3,4环氧环己基)-乙基三甲氧基硅烷 10%的聚己内酯三元醇 5%的1,2-环氧基十二烷放入装置中高速搅拌,搅拌混合2小时后形成均匀液体B,然后加入溶液A,再混合搅拌2小时得到均匀液体C,液体C即是纳米压印用紫外光固化阳离子型刻蚀胶。The diaryliodonium phosphate photoinitiator that the total weight ratio is 10% is dissolved with dodecyl vinyl ether at 50°C, and the amount of dodecyl vinyl ether is 30% of the total weight ratio to form a uniform Solution A; the total weight ratio is respectively 35% of β-dioxycyclopentyl ether and 10% of β-(3,4 epoxycyclohexyl)-ethyltrimethoxysilane 10% polycaprolactone triol Put 5% 1,2-epoxydodecane into the device and stir at a high speed. After stirring and mixing for 2 hours, a uniform liquid B is formed, then add solution A, and mix and stir for 2 hours to obtain a uniform liquid C. Liquid C is nano UV-curable cationic resist for imprinting.
实施例5Example 5
将总重量比为8%的三芳基硫鎓六氟砷酸盐光引发剂在室温下用甘油碳酸酯丙烯基醚溶解,甘油碳酸酯丙烯基醚用量为总重量比的25%,形成均匀溶液A;将总重量比分别为20%的二氧化双环戊二烯 27%3,4-环氧基-6 -甲基-环己基甲酸-3′ 4′-环氧基-6′-甲基环己基甲酯和3%的γ-缩水甘油醚氧丙基三甲氧基硅烷 15%的1,2-环氧基十六烷放入装置中高速搅拌,搅拌混合2小时后形成均匀液体B,然后加入溶液A,再混合搅拌2小时得到均匀液体C,之后边搅拌边加入总重量比为2%的助剂,助剂包括聚醚烷基共改性硅油消泡剂、流平剂和偶联剂,加完助剂后再搅拌2小时即得到纳米压印用紫外光固化阳离子型刻蚀胶。The triarylsulfonium hexafluoroarsenate photoinitiator with a total weight ratio of 8% is dissolved at room temperature with glycerol carbonate propenyl ether, and the amount of glycerol carbonate propenyl ether is 25% of the total weight ratio to form a homogeneous solution A; total weight ratio is respectively 20% dicyclopentadiene dioxide 27% 3,4-epoxy-6-methyl-cyclohexylcarboxylate-3' 4′-Epoxy-6′-methylcyclohexylmethyl ester and 3% of γ-glycidyloxypropyltrimethoxysilane Put 15% 1,2-epoxyhexadecane into the device and stir at a high speed. After stirring and mixing for 2 hours, a uniform liquid B is formed, then add solution A, and mix and stir for 2 hours to obtain a uniform liquid C, and then add it while stirring The total weight ratio is 2% auxiliary agent, the auxiliary agent includes polyether alkyl co-modified silicone oil defoamer, leveling agent and coupling agent, after adding the auxiliary agent, stir for 2 hours to obtain the ultraviolet light for nanoimprinting Curing cationic etchant.
对上述五种纳米压印用紫外光固化阳离子型刻蚀胶进行各种性能测试,其结果见表1。Various performance tests were carried out on the above five UV-curable cationic etching glues for nanoimprinting, and the results are shown in Table 1.
本发明的纳米压印用紫外光固化阳离子型刻蚀胶与目前微电子行业所使用的正性或负性胶相比较,具有无挥发性溶剂、低粘度、固化速度快、低收缩、高附着力、高抗蚀性,是一种优良的、环保的纳米压印制造专用光固化刻蚀胶。Compared with the positive or negative glue used in the current microelectronics industry, the UV-curable cationic etching glue for nanoimprinting of the present invention has the advantages of no volatile solvent, low viscosity, fast curing speed, low shrinkage, and high adhesion. High strength and high corrosion resistance, it is an excellent and environmentally friendly photocurable etchant for nanoimprint manufacturing.
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| CN100400555C (en) * | 2006-08-25 | 2008-07-09 | 南京大学 | UV Curing Composite Materials and Applications |
| CN101220253B (en) * | 2007-12-18 | 2012-06-20 | 杨钢 | Single-component stable luminescent device embedding composition at room temperature |
| JP4617387B2 (en) * | 2009-06-17 | 2011-01-26 | キヤノン株式会社 | Manufacturing method of fine structure |
| CN101930171B (en) * | 2009-06-26 | 2012-06-20 | 比亚迪股份有限公司 | Ultraviolet curing composition and preparation method thereof and pattern preparation method |
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| CN103937303B (en) * | 2014-03-21 | 2017-06-06 | 中国科学院化学研究所 | A kind of cationic polymerization hydrophilic coating materials and its application in printing plate preparation |
| CN104932197B (en) * | 2015-05-26 | 2020-01-17 | 南方科技大学 | An intumescent polymeric imprinting glue for nano-imprinting |
| CN106125502A (en) * | 2016-06-17 | 2016-11-16 | 无锡英普林纳米科技有限公司 | A kind of nano-imprinting apparatus is with photoresist |
| CN107957654A (en) * | 2017-12-22 | 2018-04-24 | 青岛理工大学 | Ultraviolet curing hybrid system imprinting adhesive for large-area nano imprinting |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4645781A (en) * | 1983-03-29 | 1987-02-24 | Union Carbide Corporation | Blends of cyclic vinyl ether containing compounds and expoxides |
| US5525645A (en) * | 1988-02-19 | 1996-06-11 | Asahi Denka Kogyo K.K. | Resin composition for optical molding |
| US20020013380A1 (en) * | 1999-01-15 | 2002-01-31 | Cecil C. Chappelow | Photopolymerizable vinyl ether based monomeric formulations and polymerizable compositions which may include certain novel spiroorthocarbonates |
| US20050064333A1 (en) * | 2002-05-16 | 2005-03-24 | Rensselaer Polytechnic Institute | Thianthrenium salt cationic photoinitiators |
-
2005
- 2005-08-01 CN CN 200510043034 patent/CN1719338B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4645781A (en) * | 1983-03-29 | 1987-02-24 | Union Carbide Corporation | Blends of cyclic vinyl ether containing compounds and expoxides |
| US5525645A (en) * | 1988-02-19 | 1996-06-11 | Asahi Denka Kogyo K.K. | Resin composition for optical molding |
| US20020013380A1 (en) * | 1999-01-15 | 2002-01-31 | Cecil C. Chappelow | Photopolymerizable vinyl ether based monomeric formulations and polymerizable compositions which may include certain novel spiroorthocarbonates |
| US20050064333A1 (en) * | 2002-05-16 | 2005-03-24 | Rensselaer Polytechnic Institute | Thianthrenium salt cationic photoinitiators |
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