CN1715152A - Stocker for semiconductor substrates, storage method therefor and fabrication method for semiconductor device using the stocker - Google Patents

Abstract

A semiconductor substrate storage library, a storage method, and a semiconductor substrate manufacturing method using the same, which store semiconductor substrates in a clean environment without complicating the structure of the storage container to achieve a simple, low-cost, and high-reliability storage, A storage method and a method of manufacturing a semiconductor device using the same. The storage library (104) includes a hollow part (107) and a channel part (120). After the channel section (106) of the channel part (120) is relatively tightly connected to the surface of the cover (102) of the storage container (101), the cover (102) can be peeled off from the storage container (101), so that the External air enters the storage container (101) so that the cavity (107) communicates with the storage container (101).

Description

Semiconductor substrate preservation library, preservation method, and semiconductor substrate manufacturing method using the same

technical field

The present invention relates to a storage for storing semiconductor substrates stored in a storage container in a clean environment, a storage method, and a semiconductor substrate manufacturing method using the same.

Background technique

The development of the manufacturing process of semiconductor devices has been accompanied by the increase of process steps and the reduction of process machines in accordance with the rules of the process. In addition, due to differences in the processing capabilities of various manufacturing equipment, there is a delay in waiting for the semiconductor substrate in the formation of the semiconductor device to be processed by the equipment in the next process. In general, semiconductor substrates that are stagnant are placed in a clean container in order to prevent the adhesion of particles or chemical substances, and then stored in a storage room called a clean storage room.

Now, due to the refinement of the semiconductor device manufacturing process, the environment that can touch the semiconductor substrate requires higher cleanliness than before, and the storage container has changed from an open transport box to a container called BOUP (Bottom Opening Unified Pod) or FOUP (Front Opening Unified Pod) airtight and clean container.

However, in the finer process in recent years, a method for requiring higher cleaning performance, maintaining sufficient cleaning performance, and suppressing the formation of a natural oxide film has been sought. As such a method, a supply port and a discharge port are provided on the storage container to replace the inside of the storage container with an inert gas, and a method of depressurizing and circulating a certain amount of inert gas in the storage container is known (see Patent Document 1).

FIG. 7 is a schematic diagram showing a storage library for semiconductor substrates according to the previous example. As shown in FIG. 7 , a storage container 300 having a gas suction port 302 provided on the bottom surface of the closed container and a gas inlet port 306 provided on the door is fixed to a table portion 441 provided in the storage 400 .

A gas aspirator 442 is provided on the table portion 441 , and the gas aspirator 442 is connected to the gas suction port 302 in the storage container 300 . Also, the inside of the storage room 400 is filled with clean nitrogen (N ₂ ).

In this state, the gas in the storage container 300 is forcibly sucked from the gas suction port 302 so that the inside of the storage container 300 becomes a low pressure. Like this, since the clean nitrogen gas flows into the storage container 300 from the gas inflow port 306, the storage container 300 can be filled with air. Nitrogen replacement.

In addition, by maintaining the low pressure of the storage container 300, the nitrogen gas in the storage container 300 is replaced, and a clean environment can be maintained.

(Patent Document 1) JP-A-2003-92345 (Japan)

(The problem to be solved by the invention)

However, in the above-mentioned conventional storage, it is necessary to always maintain the low pressure of the storage container, and the storage container is provided with a gas suction port and an inflow port, and a gas ejector must also be provided on the table of the storage. For this reason, the complexity of the structure increases the number of parts and increases the failure rate and cost, which becomes a problem. In addition, it is also difficult to clean the storage container with a complicated shape, and there is a problem that the liquid medicine remains when washing, and the liquid medicine or water remains when drying. In addition, thousands of times of container loading and capping/uncovering operations will deform the gas suction port and gas discharge port, and the container cannot be placed smoothly on the storage shelf, which will affect the reliability of the container. There is such a fatal problem as the problem.

Also, by keeping the inside of the storage container in a decompressed state, a lot of fatigue will be generated on the storage container, the life of the storage container will be shortened, and problems such as particles will occur due to irregular airflow in the storage container.

Contents of the invention

The purpose of the present invention is to solve the above-mentioned conventional problems, to store semiconductor substrates in a clean environment without complicating the structure of the storage container, to realize a simple, low-cost and high-reliability storage, a storage method, and a semiconductor device using the same. Manufacturing method.

(method to solve the problem)

In order to achieve the above object, the present invention is configured such that the storage for storing semiconductor substrates stored in the storage container replaces the gas in the storage container with the open surface of the semiconductor substrate provided on the storage container when entering and exiting.

Specifically, the semiconductor substrate storage library according to the present invention stores the semiconductor substrate forming the semiconductor device inside, so that it can be sealed and covered/removable by a closed container with one surface set as an open surface and an open surface. The storage container formed with the lid together is aimed at the storage warehouse for storing semiconductor substrates, and has an environment control part, which includes a hollow part that keeps the internal pressure higher than the external pressure by circulating a cleaning gas inside and a vent to the hollow part. A gas-supplying part for supplying gas, and a passage part, which connects the hollow part and the storage container so as not to allow outside air to intrude into the storage container; in addition, the passage part has a passage that is tightly combined with the storage container on the side opposite to the storage container cover The cover/revealing device of the cover/revealing storage container cover that is closely combined with the channel part, the cover is opened by the cover cover/removal device, and the storage container is opened by connecting the hollow part and the storage container. The interior is characterized by the same environment as the interior of the cavity.

According to the semiconductor substrate storage of the present invention, since the storage container is tightly connected to the storage container, there is a passage portion through which the lid body of the storage container can be opened, and gas replacement in the storage container can be performed through the open surface of the storage container. , Therefore, it is not necessary to provide a complicated gas replacement mechanism with a complicated suction and exhaust mechanism on the passage portion of the storage container and the storage. Therefore, the structure of the storage container and the storage is simplified, so that the failure rate and cost can be reduced, and the cleaning of the storage container becomes easy. Furthermore, the gas replacement in the storage container is carried out under a positive pressure state, which can reduce the fatigue of the storage container and prolong the service life of the storage container. As a result, it becomes possible to realize a low-cost and highly reliable storage bank.

In the semiconductor substrate storage of the present invention, the pressure of the cavity is preferably not less than 1.5 times and not more than 3.0 times the external atmospheric pressure. With such a configuration, it is possible to surely replace the gas in the storage container.

In the semiconductor substrate storage of the present invention, the gas filling the cavity is preferably a gas with a water content of 2% or less and a particle size of 0.12 μm or more in 3 or less particles per 0.028 cubic meter. With such a configuration, it is possible to store the semiconductor substrate in a clean environment, and it is possible to control the formation of a natural oxide film and the adhesion of particles on the surface of the semiconductor substrate.

In the semiconductor substrate storage of the present invention, the gas filling the cavity is preferably nitrogen, argon, helium or air. By using such a gas, it is possible to reliably preserve the semiconductor substrate.

In the semiconductor substrate storage of the present invention, it is preferable to further include a moisture removal device for reducing the moisture concentration (humidity) of the gas to 2% or less. With such a configuration, the water content inside the cavity can be reliably reduced.

In addition, it is preferable to provide the gas section with at least one of a particle removal filter for removing particles by filtering gas and a chemical filter for removing chemical substances. With such a configuration, clean gas can be reliably supplied.

The semiconductor substrate storage of the present invention preferably further includes a recovery gas line for recovering the gas discharged from the cavity, and the gas recovered by the recovery gas line is returned to the gas supply part, so that the gas supplied from the gas supply part is recycled. . With such a configuration, the amount of gas used can be reduced.

Preferably, the semiconductor substrate storage of the present invention further includes a sensor for measuring at least one concentration of moisture, organic chemical components, or inorganic chemical components in the cavity, and when the value measured by the sensor exceeds a predetermined value, an increase is made. A flow control unit for gas flow in large cavities. With such a configuration, contamination of the semiconductor substrate can be reliably prevented.

The semiconductor substrate storage of the present invention preferably further includes: a defect inspection device for inspecting surface defects of the semiconductor substrate; and a semiconductor substrate transfer device for taking out the semiconductor substrate stored in the storage container and transferring it to the defect inspection device. With such a configuration, it is possible to perform inspection during storage as well as storage state inspection, and it is possible to shorten the turnaround time in the semiconductor manufacturing process.

In the storage room for semiconductor substrates, the aisle section is preferable, and also has a retractable transfer table for transferring the outside and the storage container. Thereby, transfer of a storage container becomes easy.

The semiconductor substrate storage library of the present invention preferably further includes: a storage cover portion for storing the cover removed from the storage container by the cover cover/removal device; And the lid transfer device that stores the lid body.

In this case, it is preferable to include a plurality of channel parts. As a result, the space occupied in the clean room can be reduced.

Furthermore, when the lid is removed from the closed container, it is preferable to further include an identification portion for identifying the combination of the lid and the closed container, and to replace the removed lid to the original closed container. By doing so, it is possible to surely return the lid to the original closed container.

In the semiconductor substrate storage library of the present invention, it is preferable that the storage container is a front-opening standard container.

In the semiconductor substrate storage method of the present invention, in a storage including a cavity in which the internal pressure is kept higher than the external atmospheric pressure by circulating a cleaning gas inside, the semiconductor substrate forming the semiconductor device is accommodated inside so that the semiconductor substrate can be connected to one surface A closed container with an open surface is combined with a storage container with a closed open surface and a cover that can be opened/removed, so that the cavity and the storage container can be opened by opening the cover while the outside air does not enter the storage container. The container connection is characterized by storing the semiconductor substrate in a state where the cavity and the storage container are filled with gas and replaced.

According to the storage method for semiconductor substrates of the present invention, in the storage including the hollow portion in which the internal pressure is kept higher than the external atmospheric pressure by circulating a cleaning gas inside, the storage container is connected, and the outside air does not enter the storage container. By opening the cover, the cavity and the storage container are connected, and the semiconductor substrate is stored in a state where the cavity and the storage container are filled with gas for replacement. Therefore, it is not necessary to install complicated gas replacement equipment on the storage container and the passage of the storage. suction and exhaust mechanism. Therefore, the structure of the storage container and the storage is simplified, so that the failure rate and cost can be reduced, and the cleaning of the storage container becomes easy. Furthermore, the gas replacement in the storage container is carried out under a positive pressure state, which can reduce the fatigue of the storage container and prolong the service life of the storage container. As a result, it becomes possible to realize a low-cost and highly reliable storage bank.

In the semiconductor substrate storage method of the present invention, the pressure of the cavity is preferably not less than 1.5 times and not more than 3.0 times the external atmospheric pressure. With such a configuration, it is possible to surely replace the gas in the storage container.

In the semiconductor substrate storage method of the present invention, the inside of the cavity is preferably a gas with a water content of 2% or less and a particle diameter of 0.12 μm or more of 3 or less particles per 0.028 cubic meter. With such a configuration, it is possible to prevent particles from adhering to the surface of the semiconductor substrate.

In the semiconductor substrate storage method of the present invention, the gas inside the cavity is preferably nitrogen, argon, helium or air. Doing so can indeed save the semiconductor substrate by using it.

In the semiconductor substrate storage method of the present invention, preferably, the gas exhausted from the cavity and the gas supplied from the gas supply unit are returned to the cavity for recycling. With such a configuration, the amount of gas used can be reduced.

In the semiconductor substrate preservation method of the present invention, it is preferable to use a sensor for measuring the concentration of at least any one of moisture, organic chemical components, or inorganic chemical components inside the cavity, and when the value measured by the sensor exceeds the specified value, Increase the gas flow in the cavity. With such a configuration, the inside of the cavity and the inside of the storage container can be kept clean.

The storage method of the semiconductor substrate of the present invention is preferably also arranged in the hollow part, relatively closely connected to the passage part of the storage container with the cover side of the storage container, and closely connected to the lid of the uncovered storage container of the passage part. The passage part of the cover body cap/off device connects the hollow part and the storage container. By doing so, it is possible to surely prevent outside air from entering the storage container.

In the semiconductor substrate preservation method of the present invention, it is preferable to use a sensor for measuring the concentration of at least any one of moisture, organic chemical components, or inorganic chemical components inside the cavity, and when the value measured by the sensor exceeds the specified value, Increase the gas flow in the cavity. With such a configuration, the inside of the cavity and the inside of the storage container can be kept clean.

The semiconductor device manufacturing method of the present invention is aimed at a semiconductor device manufacturing method including a plurality of processing steps for forming a semiconductor device on a semiconductor substrate and a storage step provided between any of the plurality of processing steps, the storage step, Storage of semiconductor substrates inside, using a combination of a closed container with an open surface and a storage container with an open surface that is sealed and formed with a cover that can be covered/removed to store semiconductor substrates, the storage, including: A gas with a water content of 2% or less and a particle size of 0.12 μm or more with 3 or less particles per 0.028 cubic meters is circulated, thereby keeping the internal pressure at a positive pressure of 1.5 to 3.0 times the external atmospheric pressure Hollow part; the passage part that connects the hollow part and the storage container so that the outside air does not invade the interior of the storage container; / Uncover the cover cover/removal device of the storage container cover, the cover body is opened by the cover cover/removal device, and the interior of the storage container and the interior of the cavity have the same environment by connecting the cavity and the storage container characteristic.

According to the semiconductor device manufacturing method of the present invention, in the storage step of storing the semiconductor substrate placed in the middle of the process between the processing steps, the semiconductor substrate can be surely stored in the storage under the clean condition, so it is possible to prevent damage between the processing steps. Contamination of the semiconductor substrate can improve the yield in the semiconductor substrate manufacturing process.

-The effect of the invention-

According to the semiconductor substrate storage, storage method, and semiconductor device manufacturing method using the same of the present invention, it is a simple, low-cost, and highly reliable storage that can store semiconductor substrates in a clean environment without complicating the structure of the storage container. its preservation method. In addition, since it can be preserved in a clean environment, it is possible to realize a method of manufacturing a semiconductor device with a high yield.

Description of drawings

FIG. 1 is a schematic diagram showing a storage library for semiconductor substrates according to an embodiment of the present invention.

2 is a graph showing the relationship between the pressure in the cavity and the foreign matter adhesion rate when semiconductor wafers are stored in the semiconductor substrate storage according to the embodiment of the present invention.

3 is a graph showing the relationship between the amount of foreign matter in the cavity and the foreign matter adhesion rate when semiconductor wafers are stored in the semiconductor substrate storage according to the embodiment of the present invention.

4 is a graph showing the relationship between the moisture concentration in the cavity and the foreign matter adhesion rate when semiconductor wafers are stored in the semiconductor substrate storage according to the embodiment of the present invention.

FIG. 5 is a schematic diagram showing another example of the storage library for semiconductor substrates according to the embodiment of the present invention.

FIG. 6 is a perspective view showing a state in which the semiconductor substrate storage according to the embodiment of the present invention is assembled.

FIG. 7 is a schematic diagram showing a storage library for semiconductor substrates according to the previous example.

(Symbol Description)

100 Semiconductor substrate

101 storage container

102 cover body

103 closed container

104 preservation library

105 Support platform

106 channel department

107 hollow part

108 Cover handling device

109 Provide gas pipeline

110 Provide gas valve

111 Moisture removal device

112 chemical filter

113 Particle filter

114 exhaust valve

115 exhaust line

116 Gas mixing box

117 Moisture tester

120 Channel Department

121 Cover body cover/remove device

122 Department of Environmental Control

123 receiving station

124 Recovery gas line

Detailed ways

(Example)

One embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic diagram showing a storage library for semiconductor substrates according to an embodiment of the present invention. As shown in FIG. 1 , the storage room 104 is composed of an environment control unit 122 and a passage unit 120 connected to the entrance of the storage container 101 on the environment control unit 122 .

The storage container 101 is composed of a closed container 103 with an open surface, and a cover body 102 that is tightly combined or fitted with the closed container 103 to seal the storage container 101 on the open surface. In addition, a node-shaped wafer holder (not shown) is provided inside the storage container 101 to horizontally support a plurality of semiconductor substrates 100 with a certain vertical interval.

The passage part 120 is made up of a supporting platform 105, a passage part 106 and a cover body capping/removing device 121. After the surface of the cover body 102 of the storage container 101 fixed on the support platform 105 is relatively closely combined with the channel part 106, the cover body 102 is peeled off from the storage container 101, so that the outside air can not enter the storage container 101 and can be connected. The environment control unit 122 and the storage container 101 .

The environment control unit 122 is formed by the cavity 107 , the supply gas line 109 and the exhaust line 115 for supplying gas to the cavity 107 . The gas supply line 109 and the exhaust line 115 are provided with a gas supply valve 110 and an exhaust valve 114 respectively, which can control the pressure and gas flow rate in the cavity 107 . In addition, clean air can be supplied to the cavity 107 by installing the moisture removal device 111 on the gas supply line 109 , the chemical filter 112 and the particle filter 113 .

Inside the hollow portion 107, a storage cover portion (not shown) for storing the cover 102 removed by the cover cover/off device 121 is provided at the bottom, and the cover 102 is transferred to the storage by the cover transfer device 108. Cover body storage. In addition, a sensor (not shown) for measuring the water concentration and the chemical component concentration is provided inside the hollow portion 107 .

In addition, four passages 120 of the storage 104 of the present embodiment are vertically arranged, so that the occupied space in the clean room can be reduced.

Hereinafter, a method of storing a semiconductor substrate using the storage of the present embodiment will be described. In the cavity 107 of the storage 104 , a high-purity nitrogen gas (PN ₂ ) with a purity of 9.999% and an exposure point of -90 or less was supplied through a gas supply line 109 . Also, on the gas supply line 109, a moisture removal device 111, a chemical filter 112 and a particle filter 113 are installed, and further reduce the moisture concentration inside the cavity 107, the concentration of chemical substances and the number of foreign objects in the environment, and the moisture concentration. Less than 2%, 3 pieces/0.28m ³ (one cubic foot) of foreign matter with a particle size of 0.12 μm or more.

Also, by adjusting the gas supply valve 110 and the exhaust valve 114, the pressure in the cavity 107 is set to 1.5 to 3 times the atmospheric pressure of the clean room installed in the storage. As a result, outside air does not enter the hollow portion 107 and environmental foreign matter is suppressed. Furthermore, the water concentration in the hollow portion 107 is monitored by the moisture measuring sensor, and when the water concentration exceeds the standard value when the storage container 101 is connected, the gas flow rate of the hollow portion 107 is increased, and when it returns to the standard value, it returns to the normal state. flow. Also, sensors for measuring chemical components such as gas chromatographic analysis are arranged inside the hollow portion 107. When the measured organic matter, inorganic acid and alkaline gas and other chemical substances are above the standard value, it is possible to increase the gas flow rate similarly.

To connect the storage container 101 of the storage warehouse 104, first, the storage container 101 transported by the Over Head Transport (OHT) system is moved to the receiving station 123. The receiving table 123 expands and contracts in conjunction with the OHT system, so the storage container 101 is smoothly transferred. Next, the shrink transfer platform 123 moves the storage container 101 to the side of the channel door 106 , and places the storage container 101 on the supporting platform 105 .

Next, the surface of the cover 102 of the storage container 101 moved to the support table 105 is closely connected to the passage door 106 , and the cover 102 is peeled off from the closed container 103 by the cover cover/lift device 121 . The removed lid body 102 is stored in the storage lid body portion in the storage box 104 by the lid body conveying device 108 . At this time, in order to make the lid 102 that has been pulled off be able to cover back to the original closed container 103, a bar code and a reading device are provided.

By removing the cover 102, the storage container 101 is connected to the storage box 104, so that the hollow part 107 and the storage container 101 are in a communication state. Thus, in the inside of the storage container 101, the PN gas filled with the cavity ₁₀₇ flows in by pulling off the open surface of the cover 102, and the inside of the storage container 101 and the cavity 107 form the same environment, and the environment can be kept clean. The semiconductor substrate stored in the storage container is stored. In addition, since the passage section 106 and the storage container 101 are closely connected, the cavity 107 is set to a positive pressure, so outside air will not invade the storage container 101 .

When the storage container 101 is removed from the storage bin 104, at first, the lid body 102 stored in the storage lid body portion is returned to the channel portion 120 by the lid body conveying device 108, and the lid body capping/removing device 121 is used to cover the closed container. 103, thereby sealing the storage container 101, and then removing the storage container 101 from the storage room 104. Next, extend the receiving platform 123 to move the storage container 101 to the OHT system.

The results of the case where the semiconductor substrate was actually stored in the storage as described above are shown below.

2 is a graph showing the relationship between the pressure in the cavity and the foreign matter adhesion rate when semiconductor wafers are stored in the semiconductor substrate storage according to the embodiment of the present invention. In FIG. 2 , the horizontal axis represents the pressure (MPa) inside the cavity 107 , and the vertical axis represents the adhesion rate (%) of foreign matter adhering to the semiconductor substrate.

At the time of measurement, the particle filter 113 and the chemical filter 112 are adjusted so that the degree of cleanliness of the cavity 107 becomes constant. In addition, a 12 cm wafer usually cleaned by RCA was used as the semiconductor substrate, and it was stored in the lowermost layer of the storage container 101 . In addition, the storage container 101 is connected to the lowermost passage portion of the storage room 104 .

The foreign matter adhesion rate is the number of foreign matters with a particle size of 0.12 μm or more on the surface of the wafer before and after storage with a laser scattered defect inspection device after storing the wafer for three hours. The increase rate is obtained by the following formula (1):

Foreign matter adhesion rate = (number of foreign matter after storage - number of foreign matter before storage) / number of foreign matter before storage... (1)

In addition, the pressure in the storage container 101 was measured by the pressure gauge of the filter part incorporated in the storage container 101 at the time of measurement, but the pressure in the hollow part 107 and the pressure in the storage container 101 were almost the same.

As shown in FIG. 2, increasing the internal pressure of the cavity portion 107 reduces foreign matter adhering to the wafer. This is because by increasing the internal pressure of the hollow portion 107 , the gas replacement efficiency in the storage container 101 is also increased while preventing the intrusion of foreign matter from the outside. However, if the pressure is increased, the foreign matter adhesion rate will increase on the contrary. This is because a turbulent flow occurs in the storage container 101 due to an increase in pressure in the hollow portion 107, and the foreign matter is rolled up.

Therefore, the internal pressure of the hollow portion 107 is suitably in the range of 0.15 MPa to 0.3 MPa. This pressure range is a range of 1.5 to 3 times the atmospheric pressure of the clean room where the storage 104 is installed.

FIG. 3 shows the relationship of the foreign matter adhesion rate on the surface of the semiconductor wafer when the number of foreign matter in the cavity 107 is changed. In addition, the pressure in the hollow portion 107 was 0.2 MPa during the measurement, and the storage time was three hours. In addition, the ten wafers inside the storage container 101 are stored in the same layer, and the number of foreign matter with a particle size of 0.12 μm or more before and after storage is measured by a laser scattered defect inspection device, and the average foreign matter adhesion rate of the ten wafers is obtained. .

As shown in Figure 3, foreign matter on the surface of the wafer increased by 30% when the wafer was stored in an environment with 10 particles/0.028m ³ compared to ³ foreign matter with a particle size of 0.12 μm or more per 0.028m 3 %. Therefore, it is preferable that the number of foreign objects in the hollow portion 107 is 3 pieces/0.028m ³ or less.

FIG. 4 shows the relationship between the water concentration in the cavity 107 and the film thickness of the natural oxide film formed on the surface of the semiconductor wafer accommodated in the storage container 101 . In FIG. 4, the horizontal axis represents the moisture concentration (%), and the vertical axis represents the natural oxide film thickness (nm).

In the measurement, after the usual RCA cleaning, the 12 cm silicon wafer was treated with 1% dilute hydrofluoric acid for three minutes to remove the surface oxide film, and after five hours of storage, the natural wafer was measured by polarized light analysis. The thickness of the oxide film. Also, the water concentration is measured by a wireless moisture meter installed near the passage section 106 .

As shown in FIG. 4, the thickness of the natural oxide film formed on the wafer surface becomes thicker with the increase of the water concentration. In the semiconductor device manufacturing process, the film thickness of the natural oxide film on the wafer surface is desirably less than 0.4nm, which is less than one atomic layer, so the water concentration in the cavity 107 is preferably less than 2%.

The storage of the present embodiment is configured such that supplied gas is exhausted from the exhaust line 115 at 1 Pa. However, when using expensive gas, it is best to suppress the amount of gas used. In this case, a gas mixing box 116 is provided as shown in Figure 5, and the gas discharged from the exhaust valve 114 is recovered by the recovery gas pipeline 124, and the gas mixed in the gas mixing box 116 introduced from the suction line 109 flows back The configuration of the hollow portion 107 is also acceptable. Through such a circulation method, the gas consumption can be greatly reduced. Also, in such a configuration, by using the moisture removal device 111, the chemical filter 112, the particle filter 113, and the like can maintain the cleanliness of the hollow portion 107.

Furthermore, in the cavity 107, the state of the surface of the stored semiconductor substrate can be inspected by including a transfer mechanism for taking out the semiconductor substrate from the open surface and an optical image comparison type defect inspection device. In this way, defective semiconductor substrates can be ejected, and a more reliable storage can be realized. Also, the processing waiting time of the semiconductor substrate can be effectively utilized, and the turnaround time (TAT) in the manufacturing process of the semiconductor substrate can be shortened.

Furthermore, by combining the storage libraries of this embodiment with the multiple arrays shown in FIG. 6, the storage capacity can be increased, and more efficient storage becomes possible.

In addition, in this embodiment, high-purity nitrogen gas is introduced into the cavity 107, but an inert gas such as argon or helium or dry air may be used instead of the nitrogen gas.

As described above, the storage of this embodiment can store semiconductor wafers in a clean environment without providing a special mechanism in the storage container.

In the present embodiment, a front-opening FOUP is used as the storage container, but the present invention is not limited thereto, and the same effect can be obtained with a bottom-opening BOUP.

In the manufacturing process of semiconductor devices, semiconductor substrates can be stored in the storage room of this embodiment in the storage process between waiting for the next process to process, so that the pollution of the semiconductor substrate and the formation of natural oxide film can be prevented during storage, so the finished product can be realized. High-efficiency semiconductor device manufacturing process. In addition, it is particularly effective to preserve the semiconductor substrate during the gate insulating film forming process in which the formation of a natural oxide film is disliked.

-Possibility of industrial use-

The semiconductor substrate storage library of the present invention, the storage method, and the semiconductor device manufacturing method using it can store semiconductor substrates in a clean environment without complicating the structure of the storage container, and can realize a simple, low-cost, high-reliability storage library and In addition to the storage method, a semiconductor device manufacturing method with a high yield can be realized. Therefore, the semiconductor substrate storage library, the storage method and the semiconductor device manufacturing method using the same of the present invention are useful.

Claims (22)

1. a semiconductor substrate is preserved the storehouse, it is characterized by:

Above-mentioned semiconductor substrate is preserved the storehouse, be that the semiconductor substrate that will form semiconductor device is accommodated in inside, with the closed container by being arranged to open surface with a face and make open surface airtight and and the accommodating container that forms of the lid that can cover/the take off preservation semiconductor substrate that combines, comprising:

The environment control part has to comprise by the circulation clean air of portion within it and makes its pressure inside be kept above the blank part of exterior pressure and provide gas portion to what blank part provided gas;

Channel part, it is inner and above-mentioned blank part is connected with above-mentioned accommodating container to make ambient atmos not invade above-mentioned accommodating container; And

Above-mentioned channel part, the cover cap that covers/take off above-mentioned accommodating container lid that has a face of above-mentioned relatively accommodating container lid and passage department that above-mentioned accommodating container is combined closely and combine closely/take off device, in addition with above-mentioned passage department

By above-mentioned cover cap/take off device to open above-mentioned lid,, make the inside of above-mentioned accommodating container and the inside of above-mentioned blank part have same gaseous environment by making being connected of above-mentioned blank part and above-mentioned accommodating container.

2. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:

The pressure of above-mentioned blank part is more than 1.5 times below 3.0 times of external pressure.

3. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:

Above-mentioned gas is an aqueous ingredients below 2% and particle diameter at the gas below 3 in per 0.028 cubic meter of the corpuscle foreign matter more than the 0.12 μ m.

4. semiconductor substrate according to claim 3 is preserved the storehouse, it is characterized by:

Above-mentioned gas is nitrogen, argon gas, helium or air.

5. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:

The above-mentioned gas portion that provides also is included as the moisture concentration of above-mentioned gas is reduced to the moisture device of removing below 2%.

6. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:

The above-mentioned gas portion that provides has the particle of removing particle by filtering gas at least and removes filter and remove in the chemical filter of chemical substance one.

7. preserve the storehouse according to claim 5 or 6 described semiconductor substrates, it is characterized by:

Also comprise the recovery gas line, reclaim the gas of discharging, turn back to the above-mentioned gas portion that provides, make from the above-mentioned gas circulation that provides gas portion to provide and use by the gas that reclaims by above-mentioned recovery gas line from above-mentioned blank part.

8. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:

Also comprise flow control portion, at least a kind of sensor of concentration and when the measured value of the sensor during above the value of defined in measuring above-mentioned blank part in-to-in moisture, organic chemistry composition or inorganic chemistry composition increases gas flow in the above-mentioned blank part.

9. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:

Also comprise:

Check the defective device, check the defective of above-mentioned semiconductor substrate surface;

The semiconductor substrate conveyer takes out the semiconductor substrate of taking in the above-mentioned accommodating container, is transplanted on above-mentioned inspection defective device.

10. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:

Above-mentioned channel part also has the telescopic biography platform that connects that connects biography outside and above-mentioned accommodating container.

11. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:

Also comprise:

Keeping cover body part, keeping be by above-mentioned cover cap/the take off above-mentioned lid that device is taken off from above-mentioned accommodating container,

The lid Handling device, with the above-mentioned lid taken off to above-mentioned cover cap/take off device and above-mentioned keeping cover body part is transferred.

12. semiconductor substrate according to claim 11 is preserved the storehouse, it is characterized by:

Comprise plurality of channels portion.

13. semiconductor substrate according to claim 12 is preserved the storehouse, it is characterized by:

Also comprise the identification part, when with above-mentioned lid when above-mentioned closed container is taken off, discern the combination of above-mentioned lid and above-mentioned closed container, the above-mentioned lid of taking off can be covered back above-mentioned closed container again.

14. semiconductor substrate according to claim 1 is preserved the storehouse, it is characterized by:

Above-mentioned accommodating container is the front open type volumetric standard.

15. a semiconductor substrate store method is characterized by:

In comprising by the preservation storehouse that makes the pressure inside maintenance blank part higher at the internal circulation clean air than the atmosphere outside pressure,

The semiconductor substrate that forms semiconductor device is received into inside, with by be arranged to the closed container of open surface with a face and above-mentioned open surface is airtight and and the accommodating container that forms of the lid that can cover/take off combine,

Ambient atmos is not invaded under the above-mentioned accommodating container in-to-in state,, above-mentioned blank part is connected with above-mentioned accommodating container by open above-mentioned lid,

Make above-mentioned blank part and above-mentioned accommodating container under the state of aerification displacement, preserve above-mentioned semiconductor substrate.

16. semiconductor substrate store method according to claim 15 is characterized by:

The pressure of above-mentioned blank part is more than 1.5 times below 3.0 times of external pressure.

17. semiconductor substrate store method according to claim 15 is characterized by:

The inside of above-mentioned blank part, be full of aqueous ingredients below 2% and particle diameter at the gas below 3 in per 0.028 cubic meter of the corpuscle foreign matter more than the 0.12 μ m.

18. semiconductor substrate store method according to claim 17 is characterized by:

Above-mentioned gas is nitrogen, argon gas, helium or air.

19. semiconductor substrate store method according to claim 17 is characterized by:

By returning above-mentioned blank part it is recycled from the gas that above-mentioned blank part is discharged.

20. semiconductor substrate store method according to claim 15 is characterized by:

Above-mentioned blank part is connected by channel part with above-mentioned accommodating container,

Above-mentioned channel part comprises:

Passage department is arranged on above-mentioned blank part, and leak-tight joint relative with the lid one side of above-mentioned accommodating container above-mentioned accommodating container,

Cover cap/take off device, leak-tight joint above-mentioned channel part door closure/the take off lid of above-mentioned accommodating container.

21. semiconductor substrate store method according to claim 15 is characterized by:

With any at least concentration in the above-mentioned blank part in-to-in of sensor determination moisture, organic chemistry composition or the inorganic chemistry composition,

When the said determination result surpasses the value of defined, increase the gas flow that offers above-mentioned blank part.

22. a manufacturing method for semiconductor device is by in a plurality of treatment process that form semiconductor device on the semiconductor substrate be arranged on the preservation operation of above-mentioned a plurality of treatment process between any and form, and it is characterized by:

Above-mentioned keeping operation is used and is preserved the storehouse, and above-mentioned semiconductor substrate is taken in inside, above-mentioned preservation storehouse, uses a face to be arranged to the closed container of open surface and open surface is airtight and with accommodating container that the lid that can cover/take off forms the together preservation semiconductor substrate that combines,

Above-mentioned preservation storehouse comprises:

The environment control part, comprise blank part, by the circulation aqueous ingredients of portion within it below 2% and particle diameter at the gas below 3 in per 0.028 cubic meter of the environment foreign matter number more than the 0.12 μ m, make its pressure inside remain the malleation below 3.0 times more than 1.5 times of external pressure, with gas portion is provided, having to above-mentioned blank part provides gas;

Channel part, it is inner and above-mentioned blank part is connected with above-mentioned accommodating container not make ambient atmos invade above-mentioned accommodating container; And

The passage department that above-mentioned channel part, the one side with above-mentioned relatively accommodating container lid and above-mentioned accommodating container are combined closely and the cover cap that covers/take off the accommodating container lid of combining closely with above-mentioned passage department/take off device, in addition

By cover cap/take off device to take lid off,, make that above-mentioned accommodating container is inner to have same gaseous environment with above-mentioned blank part inside by making the connection of above-mentioned blank part and above-mentioned accommodating container.

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