CN1797690A - Field emission light source and backlight module of using the light source - Google Patents

Abstract

The field emission light source includes following components: a substrate with flattening surface; a conductive cathode formed on surface of the substrate; an anode layer and a vacuum inner space between the cathode and the anode; a fluorescent layer setup at surface of the anode layer, and capable of emitting visible light when bombed by emitted electrons; being located at the vacuum inner space, the insulating layer is setup on the conductive cathode; being connected to the insulating layer, the multiple electro emitters is in use for emitting electros. The electro emitter is a solid structure.

Description

Field emission light source and backlight module using the light source

【Technical field】

The present invention relates to a light source, in particular to a field emission light source and a backlight module using the light source.

【Background technique】

Artificial lighting sources can generally be divided into incandescent lamps, discharge lamps and solid-state light sources, including incandescent lamps, fluorescent tubes, light emitting diodes (Light Emitting Diode, LED), halogen lamps, high-pressure gas discharge lamps (High Intensity Discharge, HID), etc. Various lighting sources. Among them, the incandescent lamp emits heat after the tungsten wire is energized, and generates a large amount of heat at the same time. Its luminous efficiency is low (about 8-15 lumens/watt), and the brightness is limited. The steam emits ultraviolet rays and hits the fluorescent material to emit visible light. It is generally used for ordinary daily life lighting. Its advantage is high luminous efficiency (up to 80 lumens/watt), and its disadvantage is that it contains mercury, which is harmful to the environment and human body, so it is not suitable for environmental protection requirements. LED is a solid-state light source, including various red LEDs, yellow LEDs, blue LEDs and white LEDs. Its advantages include fast response, small size, and no pollution. The disadvantage is low luminous efficiency (about 20-30 lumens/ watts), currently used in interior lighting, decorative lights, etc.; halogen lamps and HID lamps are currently the mainstream of automotive headlights, especially HID lamps, which can emit light with a color temperature close to daytime sunlight (the color temperature of HID lamps is about 4,300K -10,000K, sunlight color temperature 6,000K), and HID has the advantages of farther sight than halogen lamps, but HID needs to convert low voltage to 23,000 volts high voltage, excite xenon to emit arc light, and then stabilize the voltage at 8,000 volts , continuous supply of xenon bulbs to emit light, therefore, it needs to cooperate with special voltage and current conversion equipment to work, such as the HID light source disclosed in US Patent Nos. 6,710,551 and 6,781,327.

Chinese invention patent application No. 00107813.5 published on January 17, 2001 discloses a field emission white light source using carbon nanotubes.

Please refer to Fig. 1, the white light source mainly includes: a metal film 11 used as a cathode, the metal film 11 is arranged on the lower substrate 10, a conductive polymer film pattern 12 formed on the metal film 11, and carbon nanotubes with a hollow structure 15 is bonded substantially vertically on the conductive polymer film pattern 12 with one end exposed to emit electrons, and a transparent electrode 17 with phosphor 16 is provided under a transparent upper substrate 18 . When in use, the carbon nanotubes 15 emit electrons to bombard the phosphor, thereby emitting visible light. This white light source based on field emission has the advantages of high electric energy conversion efficiency, high luminous efficiency, and no pollution.

However, the carbon nanotubes in the above-mentioned field emission light source are hollow structures, and electrons emitted by the electric field will deform the carbon nanotubes, shortening their service life. Moreover, because the carbon nanotubes are fixed on the conductive polymer film relying on the adhesive force, and it has a hollow structure, so when the field emission electric field strength increases, the carbon nanotubes may detach from the conductive polymer film due to the force of the electric field. This causes damage and shortens the service life of the field emission light source.

【Content of invention】

In order to overcome the problem of short service life of field emission light sources in the prior art, the present invention provides a field emission light source with long service life.

The technical solution adopted by the present invention to solve the technical problem is: a field emission light source includes a substrate with a flat surface; a conductive cathode formed on the surface of the substrate; an anode layer, which is separated from the conductive cathode by a certain distance and formed a vacuum inner space; a fluorescent layer arranged on the surface of the anode layer, which can emit visible light when bombarded by electrons; an insulating layer located in the vacuum inner space and arranged on the conductive cathode; and connected to Multiple electron emitters at the insulating layer are used to emit electrons, and the electron emitters are solid structures.

Another object of the present invention is to provide a backlight module using the above-mentioned field emission light source.

A backlight module of the present invention comprises a field emission light source and a light guide plate matched with the light source, the field emission light source comprises a base with a flat surface; a conductive cathode formed on the base surface; an anode layer , which is separated from the conductive cathode by a certain distance and forms a vacuum internal space; a fluorescent layer is arranged on the surface of the anode layer, and can emit visible light when bombarded by electrons; an insulating layer is located in the vacuum internal space, And it is arranged on the conductive cathode; a plurality of electron emitters connected to the insulating layer are used to emit electrons, and the electron emitter is a solid structure.

Compared with the prior art, the electron emitter of the field emission light source of the present invention has a solid structure, and the electron emitter will not be deformed when subjected to the action of an electric field, and the electron emitter will not be damaged even if the intensity of the electric field is enhanced.

【Description of drawings】

Fig. 1 is a schematic structural diagram of a field emission light source in the prior art.

Fig. 2 is a schematic structural view of the first embodiment of the field emission light source of the present invention.

FIG. 3 is an enlarged schematic view of the electron emitter in FIG. 2 .

Fig. 4 is a schematic structural view of the second embodiment of the field emission light source of the present invention.

FIG. 5 is a schematic perspective view of the backlight module of the present invention.

【Detailed ways】

Please refer to FIG. 2 , which is a schematic structural diagram of the first embodiment of the field emission light source of the present invention. The field emission light source 2 includes a non-metal substrate 20, a nucleation layer 21 formed on the surface of the substrate 20, a conductive layer 22, and an insulating layer 23 are stacked in sequence; a plurality of nano-electron emitters 24 are regularly arranged and formed on the insulating layer. Layer 23 surface; a transparent substrate 27, which is spaced a certain distance from the nanometer electron emitter 24, an anode layer 26 is formed on the surface of the transparent substrate 27 close to the electron emitter 24, and a fluorescent layer 25 is formed on the anode The surface of the layer 26; in addition, a plurality of side walls 28 seal the field emission illumination source 2 and support the transparent substrate 27, and form an internal vacuum space.

The nucleation layer 21 is composed of silicon and is very thin, preferably less than 1 micron. Since the substrate 20 is a non-metallic material, the formation of the nucleation layer 21 is beneficial to the formation of the conductive layer 22 , that is, it provides deposition conditions for the conductive layer 22 . The nucleation layer 21 is an optional layer. The material of the conductive layer 22 is one of copper, silver or gold. The material of the insulating layer 23 can be silicon carbide.

Please also refer to FIG. 3 , which is an enlarged schematic view of the electron emitter in the first figure. The nano-electron emitter 24 is a solid structure. As shown in the figure, the nano-electron emitter 24 is composed of a base 241 and a top 242 respectively, the base 241 is a columnar body, the top 242 is a tapered tip, and the base 241 is made of the same material as the insulating layer 23 . The material of the top 242 is molybdenum. The base 241 is a cylinder whose diameter d2 is 10-100 nanometers; the larger diameter at the bottom of the top 242 is equal to the diameter of the cylinder, which is d2, and the smaller diameter d1 of the top is within the range of 0.5-10 nanometers; the base of the nano-electron emitter 24 The height of 241 is in the range of 100-2000 nm, and the height of the top 242 is in the range of 10-200 nm.

The fluorescent layer 25 includes fluorescent material, which can generate visible light when bombarded by electrons. The anode layer 26 is made of ITO (Indium Tin Oxide, indium tin oxide) conductive film. The transparent substrate 27 is made of transparent glass.

Please refer to FIG. 4 , which is a schematic structural diagram of a second embodiment of the field emission light source of the present invention. The difference between this embodiment and the first embodiment is that: the substrate 30 is made of metal material, the conductive layer 32 is formed on the substrate 30 , and the nucleation layer 31 is formed on the conductive layer 32 . Such setting is because the substrate 30 is made of metal material, and the conductive layer 32 is also made of metal material, which is easier to deposit on the substrate 30 . The purpose of setting the nucleation layer 31 on the conductive layer 32 is to facilitate the deposition of the silicon carbide layer 33 .

The electron emitter of the field emission light source of the present invention is a solid structure, and its base is an insulating material, and its top is a metal material. When an electric field is applied, the excited electrons will reach the top from the base, which will strengthen the potential difference, so that more electrons will be emitted. , The solid structure can make the electron emitter not easy to deform and damage, and can prolong its service life.

The backlight module using the field emission light source of the present invention will be described below.

Please refer to FIG. 5 , which is a schematic diagram of the backlight module of the present invention. The backlight module 4 includes the aforementioned field emission light source 2 and a light guide plate 40. The field emission light source 2 is arranged at a corner of the light guide plate 40. The light guide plate 40 includes a light-emitting surface 41 with multiple arc-shaped structures on the light-emitting surface 41. 43, the farther away from the light source 2, the smaller the distance between the arc-shaped structures 43, that is, the higher the density.

The backlight module adopting the field emission light source of the present invention, because the brightness emitted by the field emission light source is 10 to 1000 times higher than that of the organic electroluminescent diode or the cold cathode ray tube, so the backlight module adopting the light source can improve the overall brightness.

Claims (12)

1. field emission light source, it comprises that one has the substrate of a flat surface; One is formed on the conductive cathode of this substrate surface; One anode layer and this conductive cathode are separated by a distance and form the inner space of a vacuum; One fluorescent layer is arranged on this anode layer surface, can send visible light during by electron bombard; One insulating barrier is positioned at the inner space of described vacuum, and is arranged on this conductive cathode; And be connected a plurality of electron emitters at insulating barrier place, in order to emitting electrons; It is characterized in that: this electron emitter is a solid construction.

2. field emission light source as claimed in claim 1 is characterized in that: this electron emitter comprises a base portion and a top, and this base portion links to each other with this insulating barrier, and the material of this base portion is a carborundum, and the material at this top is a molybdenum.

3. field emission light source as claimed in claim 2 is characterized in that: the base portion of this electron emitter is a column, and the top is a bullet.

4. field emission light source as claimed in claim 3, it is characterized in that: the altitude range of this base portion is 100～2000 nanometers, the diameter range of base portion is 10～100 nanometers, and the altitude range at this top is 10～200 nanometers, and the upper bottom surface diameter range at top is 0.5～10 nanometer.

5. field emission light source as claimed in claim 1 is characterized in that: this substrate is nonmetallic materials, also comprises a nucleating layer between this substrate and this insulating barrier, and this nucleating layer is made up of silicon materials.

6. field emission light source as claimed in claim 1 is characterized in that: this substrate is a metal material, also comprises a nucleating layer between this conductive cathode and this insulating barrier, and this nucleating layer is made up of silicon materials.

7. module backlight, it comprises a field emission light source and a light guide plate that cooperates with this light source, this field emission light source comprises: one has the substrate of a flat surface; One is formed on the conductive cathode of this substrate surface; One anode layer, itself and this conductive cathode is separated by a distance and form the inner space of a vacuum; One fluorescent layer is arranged on this anode layer surface, can send visible light during by electron bombard; One insulating barrier is positioned at the inner space of described vacuum, and near this conductive cathode; Be connected a plurality of electron emitters at insulating barrier place, in order to emitting electrons; It is characterized in that: this electron emitter is a solid construction.

8. module backlight as claimed in claim 7 is characterized in that: this electron emitter comprises a base portion and a top, and this base portion links to each other with this insulating barrier, and the material of this base portion is a carborundum, and the material at this top is a molybdenum.

9. module backlight as claimed in claim 8 is characterized in that: the base portion of this electron emitter is a column, and the top is a bullet.

10. module backlight as claimed in claim 9 is characterized in that: the altitude range of the base portion of this electron emitter is in 100～2000 nanometers, and diameter range is in 10～100 nanometers; The altitude range at the top of this electron emitter is 10～200 nanometers, and the upper bottom surface diameter range at top is 0.5～10 nanometer.

11. module backlight as claimed in claim 7 is characterized in that: the substrate of this electron emitter is nonmetallic materials, also comprises a nucleating layer between this substrate and this insulating barrier, and this nucleating layer is made up of silicon materials.

12. module backlight as claimed in claim 7 is characterized in that: the substrate of this electron emitter is a metal material, also comprises a nucleating layer between this conductive cathode and this insulating barrier, and this nucleating layer is made up of silicon materials.

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