[go: up one dir, main page]

CN1770649A - High-frequency module for portable telephone apparatus - Google Patents

High-frequency module for portable telephone apparatus Download PDF

Info

Publication number
CN1770649A
CN1770649A CNA2005101283422A CN200510128342A CN1770649A CN 1770649 A CN1770649 A CN 1770649A CN A2005101283422 A CNA2005101283422 A CN A2005101283422A CN 200510128342 A CN200510128342 A CN 200510128342A CN 1770649 A CN1770649 A CN 1770649A
Authority
CN
China
Prior art keywords
mentioned
medium substrate
signal
power amplifier
frequency module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2005101283422A
Other languages
Chinese (zh)
Other versions
CN100420159C (en
Inventor
中野一博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Publication of CN1770649A publication Critical patent/CN1770649A/en
Application granted granted Critical
Publication of CN100420159C publication Critical patent/CN100420159C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • H04B1/44Transmit/receive switching
    • H04B1/48Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021Constructional details
    • H03H2001/0085Multilayer, e.g. LTCC, HTCC, green sheets

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Transceivers (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

The inventin provides a small high-frequency module for cellular phone which has proper satisfactory heat dissipation effect and is strong against dust or moisture. This high-frequency module for cellular phone has a dielectric substrate 1, an antenna switch IC 6 for switching the state between a reception state and a transmission state, an SAW filter 7 consisting of an SAW element allowing a predetermined frequency signal to pass from a reception signal, a power amplifier IC 8 for amplifying a transmission signal, and a transceiver IC 9 for converting the reception signal into a baseband signal and converting the baseband signal into a transmission signal. Since the module consists of the transceiver IC 9, in which the function for converting the reception signal into the baseband signal and converting the baseband signal into the transmission signal is made into an IC, the module can be miniaturized and formed on the same dielectric substrate 1, and the small and inexpensive module can be obtained.

Description

High-frequency module for portable telephone apparatus
Technical field
The present invention relates to be used in the suitable high-frequency module for portable telephone apparatus of pocket telephone.
Background technology
The accompanying drawing of existing high-frequency module for portable telephone apparatus is described, Fig. 6 is the vertical view of existing high-frequency module for portable telephone apparatus, Fig. 7 is the cutaway view of existing high-frequency module for portable telephone apparatus, and Fig. 8 is the major part cutaway view of existing high-frequency module for portable telephone apparatus.
The structure of existing high-frequency module for portable telephone apparatus is described based on Fig. 6~Fig. 8, above the medium substrate 51 of multilayered medium material He in the lamination wiring figure 52 is set stacked, at the duplexer IC53 of this configuration flip-chip shape above medium substrate 51, power amplifier IC54, SAW filter 55, VCO56 and other electronic devices 57 of flip-chip shape, formed the circuit of expectation.
In addition, as shown in Figure 8, on medium substrate 51, be provided with the recess 51a at the end, the power amplifier IC54 that configuration is made of semiconductor chip in this recess 51a, on medium substrate 51, in the bottom of power amplifier IC54 heat passage 58 is set, to emit the heat of power amplifier IC54.
Existing high-frequency module for portable telephone apparatus does not so have received signal is transformed to baseband signal, baseband signal is transformed to the function that sends signal, not only this function need be set on other circuit substrate, but also the circuit relevant with this function need be set on circuit substrate, cause large-scale and cost high.
In addition, though the heat radiation at power amplifier IC54 is handled, but, not only the heat radiation in the SAW filter 55 is insufficient, and, power amplifier IC54 is accommodated among the recess 51a on the face identical with the medium substrate 51 that has disposed duplexer IC53, but this can not dwindle all surface areas of medium substrate 51, large-scale and become the state that expose on the surface of medium substrate 51, therefore, anti-dust and moist ability.
The problem of existing high-frequency module for portable telephone apparatus is, do not have received signal is transformed to baseband signal, baseband signal is transformed to the function that sends signal, not only this function need be set on other circuit substrate, but also the circuit relevant with this function need be set on circuit substrate, large-scale and cost is high.
The problem that has in addition is, though the heat radiation at power amplifier IC54 is handled, but, not only the heat radiation in the SAW filter 55 is insufficient, and, power amplifier IC54 is accommodated among the recess 51a on the face identical with the medium substrate 51 that has disposed duplexer IC53, but this can not dwindle all surface areas of medium substrate 51, large-scale and become the state that expose on the surface of medium substrate 51, therefore, the ability of opposing dust and moisture.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of good heat dissipation effect and small-sized, resist the strong high-frequency module for portable telephone apparatus of ability of dust and moisture simultaneously.
Be used to solve the means of problem
As first settling mode that is used to solve above-mentioned problem, its structure is to have: the medium substrate with wiring figure; Be connected with above-mentioned wiring figure, carry out the duplexer IC of the conversion of accepting state and transmit status; Be connected with above-mentioned wiring figure, allow SAW filter that the signal of the assigned frequency in the received signal passes through, that constitute by the SAW element; Amplify the power amplifier IC that sends signal; Be connected with above-mentioned wiring figure, received signal is transformed to baseband signal, baseband signal is transformed to the wireless set IC that sends signal, in mounting on the above-mentioned medium substrate of above-mentioned SAW filter and above-mentioned power amplifier IC, with the opposed position of lower surface of above-mentioned SAW filter and above-mentioned power amplifier IC on disposed heat passage.
In addition, as second settling mode, its structure is, be configured in a face side of above-mentioned medium substrate to the above-mentioned SAW filter of major general and above-mentioned power amplifier IC, the another side side of above-mentioned medium substrate be provided with a plurality of terminals of being connected with above-mentioned wiring figure and with the heat radiation figure of above-mentioned heat passage conducting.
In addition, as the 3rd settling mode, its structure is, when forming above-mentioned duplexer IC, above-mentioned power amplifier IC and wireless set IC respectively with nude film, under the state of a face side that is configured in above-mentioned medium substrate, utilize lead-in wire to be connected with above-mentioned wiring figure, with the above-mentioned face side of above-mentioned SAW filter configuration, be provided with the first insulating resin portion of covering above-mentioned duplexer IC, above-mentioned power amplifier IC, wireless set IC and SAW filter in an above-mentioned face side of above-mentioned medium substrate at above-mentioned medium substrate.
In addition, as the 4th settling mode, its structure is, when a face side of above-mentioned medium substrate disposes above-mentioned duplexer IC, above-mentioned power amplifier IC and SAW filter, be provided with the recess at the end in another side side with the opposed locational above-mentioned medium substrate of above-mentioned duplexer IC, in above-mentioned recess, with the opposed state of above-mentioned duplexer IC under, disposed the above-mentioned wireless set IC of flip-chip shape.
In addition, as the 5th settling mode, its structure is, forming above-mentioned duplexer IC and above-mentioned power amplifier IC respectively with nude film when, under the state of a face side that is configured in above-mentioned medium substrate, utilize lead-in wire to be connected with above-mentioned wiring figure, above-mentioned face side at above-mentioned medium substrate is provided with the first insulating resin portion that covers above-mentioned duplexer IC, above-mentioned power amplifier IC and above-mentioned SAW filter, simultaneously, in above-mentioned recess, be provided with the second insulating resin portion that covers above-mentioned wireless set IC.
In addition, as the 6th settling mode, its structure is that above-mentioned wireless set IC has at least: the demodulator circuit that above-mentioned received signal is transformed to baseband signal; Be transformed to the modulation circuit that sends signal with sending with baseband signal; The baseband circuit that is connected with above-mentioned modulation circuit with above-mentioned demodulator circuit; VCO to demodulator circuit and modulation circuit supply oscillation signals according.
In addition, as the 7th settling mode, its structure is, above-mentioned another side side at above-mentioned medium substrate has a plurality of terminals that are connected with above-mentioned wiring figure, and above-mentioned terminal has the power supply terminal that the antenna terminal, signal input output end of base band, the supply that are connected with antenna with transmitting-receiving are used to make the power supply of circuit working.
The invention effect
The structure of high-frequency module for portable telephone apparatus of the present invention is to have: the medium substrate with wiring figure; Be connected with above-mentioned wiring figure, carry out the duplexer IC of the conversion of accepting state and transmit status; Be connected with above-mentioned wiring figure, allow SAW filter that the signal of the assigned frequency in the received signal passes through, that constitute by the SAW element; Amplify the power amplifier IC that sends signal; Be connected with above-mentioned wiring figure, received signal is transformed to baseband signal, baseband signal is transformed to the wireless set IC that sends signal, in mounting on the above-mentioned medium substrate of above-mentioned SAW filter and above-mentioned power amplifier IC, with the opposed position of lower surface of above-mentioned SAW filter and above-mentioned power amplifier IC on disposed heat passage.
That is, utilize to have made received signal is transformed to baseband signal, the wireless set IC that baseband signal is transformed to the function ICization that sends signal constitutes, therefore, on can the basis of miniaturization, can be formed on the same medium substrate, can obtain small-sized and cheap high-frequency model.
In addition, owing to utilize heat passage heat radiation SAW filter and power amplifier IC, therefore, obtain well behaved high-frequency model.
In addition, owing to be configured in a face side of above-mentioned medium substrate to the above-mentioned SAW filter of major general and above-mentioned power amplifier IC, the another side side of above-mentioned medium substrate be provided with a plurality of terminals of being connected with above-mentioned wiring figure and with the heat radiation figure of above-mentioned heat passage conducting, therefore, utilize the heat radiation figure further to strengthen the radiating effect of SAW filter and power amplifier, obtain the better high-frequency model of performance.
In addition, owing to forming above-mentioned duplexer IC respectively with nude film, in the time of above-mentioned power amplifier IC and wireless set IC, under the state of a face side that is configured in above-mentioned medium substrate, utilize lead-in wire to be connected with above-mentioned wiring figure, with the above-mentioned face side of above-mentioned SAW filter configuration at above-mentioned medium substrate, above-mentioned face side at above-mentioned medium substrate is provided with the above-mentioned duplexer IC of covering, above-mentioned power amplifier IC, the first insulating resin portion of wireless set IC and SAW filter, therefore, the ability of opposing dust and moisture is strong, and a kind of well behaved high-frequency model can be provided.
In addition, because when a face side of above-mentioned medium substrate disposes above-mentioned duplexer IC, above-mentioned power amplifier IC and SAW filter, be provided with the recess at the end in another side side with the opposed locational above-mentioned medium substrate of above-mentioned duplexer IC, in above-mentioned recess, with the opposed state of above-mentioned duplexer IC under, disposed the above-mentioned wireless set IC of flip-chip shape, therefore, the parts of lift-launch on medium substrate can be dispersed in the two sides of medium substrate, can dwindle the surface area of medium substrate, obtain small-sized high-frequency model.
In addition, because forming above-mentioned duplexer IC and above-mentioned power amplifier IC respectively with nude film when, under the state of a face side that is configured in above-mentioned medium substrate, utilize lead-in wire to be connected with above-mentioned wiring figure, above-mentioned face side at above-mentioned medium substrate is provided with the above-mentioned duplexer IC of covering, the first insulating resin portion of above-mentioned power amplifier IC and above-mentioned SAW filter, simultaneously, in above-mentioned recess, be provided with the second insulating resin portion that covers above-mentioned wireless set IC, because with the parts that carry on the first and second insulating resin portion overwrite media substrates, therefore, the ability of opposing dust and humidity is strong, and a kind of well behaved high-frequency model can be provided.
In addition, have at least owing to above-mentioned wireless set IC: the demodulator circuit that above-mentioned received signal is transformed to baseband signal; Be transformed to the modulation circuit that sends signal with sending with baseband signal; The baseband circuit that is connected with above-mentioned modulation circuit with above-mentioned demodulator circuit; Therefore VCO to demodulator circuit and modulation circuit supply oscillation signals according, makes various IC circuitization, obtains small-sized high-frequency model.
In addition, because the above-mentioned another side side at above-mentioned medium substrate has a plurality of terminals that are connected with above-mentioned wiring figure, above-mentioned terminal has the power supply terminal that the antenna terminal, signal input output end of base band, the supply that are connected with antenna with transmitting-receiving are used to make the power supply of circuit working, if be connected antenna, baseband circuit and power supply with each terminal one, just become pocket telephone, therefore, simple in structure.
Description of drawings
Fig. 1 is the major part cutaway view that first embodiment of expression high-frequency module for portable telephone apparatus of the present invention relates to.
Fig. 2 is first embodiment stereogram that relate to, that removed the state of insulating resin portion of expression high-frequency module for portable telephone apparatus of the present invention.
Fig. 3 is first embodiment stereogram that relate to, that see from the inboard of expression high-frequency module for portable telephone apparatus of the present invention.
Fig. 4 is the major part cutaway view that second embodiment of high-frequency module for portable telephone apparatus of the present invention relates to.
Fig. 5 is the circuit diagram that high-frequency module for portable telephone apparatus of the present invention relates to.
Fig. 6 is the vertical view of existing high-frequency module for portable telephone apparatus.
Fig. 7 is the cutaway view of existing high-frequency module for portable telephone apparatus.
Fig. 8 is the major part cutaway view of existing high-frequency module for portable telephone apparatus.
The explanation of Reference numeral: 1-medium substrate, face of 1a-, 1b-another side, the 1c-recess, 2-wiring figure, 3-terminal, the 4-figure that dispels the heat, 5-heat passage, A-antenna, B-base band signal process circuit, M1~M4-frequency mixer, 6-duplexer IC, the 7-SAW filter, 7a~7d-SAW filter, 8-power amplifier IC, 8a, 8b-power amplifier IC, 9-wireless set IC, 9a~9d-LNA, the 9e-demodulator circuit, 9f-baseband circuit, 9f1, the 9f2-IF band pass filter, 9f3, the 9f4-IF amplifier, 9f5-interface, 9g-local oscillation portion, 9g1-VCO, 9g2-PLL circuit, 9h-modulation circuit, 9i-sends efferent, 9i1-VCO, 9i2-PLL circuit, the 9i3-frequency mixer, 9j, the 9k-exciting amplifier, the 10-lead-in wire, the 11-first insulating resin portion, the 12-second insulating resin portion, 13-electronic device.
Embodiment
The accompanying drawing of high-frequency module for portable telephone apparatus of the present invention is described, Fig. 1 is the major part cutaway view that first embodiment of expression high-frequency module for portable telephone apparatus of the present invention relates to, Fig. 2 is that first embodiment of expression high-frequency module for portable telephone apparatus of the present invention relates to, removed the stereogram of the state of insulating resin portion, Fig. 3 is that first execution mode of expression high-frequency module for portable telephone apparatus of the present invention relates to, the stereogram of seeing from the back side, Fig. 4 is the major part cutaway view that second embodiment of expression high-frequency module for portable telephone apparatus of the present invention relates to, and Fig. 5 is the circuit diagram that expression high-frequency module for portable telephone apparatus of the present invention relates to.
Below, based on Fig. 1~Fig. 3 the structure that first embodiment of high-frequency module for portable telephone apparatus of the present invention relates to is described, has: be arranged on the wiring figure 2 in a face (upper surface) 1a side and the lamination by medium substrates 1 that constitute, stacked multilayer such as pottery and insulating resins; With form that this wiring figure 2 is connected under, a plurality of terminals 3 that are provided with along the periphery of another side (lower surface) 1b side; In another side 1b side, be arranged on a plurality of heat radiation figures 4 of terminal 3 inboards; With the state of these heat radiation figure 4 conductings under, extend a plurality of heat passages 5 that are arranged in the substrate to a face 1a side.
Be connected with the wiring figure 2 on the face 1a who is positioned at this medium substrate 1: duplexer IC6 conversion, that constitute by nude film that carries out accepting state and transmit status; Allow 2 SAW filters 7 that the signal of assigned frequency of received signal passes through, that constitute by the SAW element; Amplify to send 2 power amplifier IC8 signal, that constitute by nude film; Received signal is transformed to baseband signal, baseband signal is transformed to the wireless set IC9 that sends signal; By other electronic devices 13 that the capacitor of shaped like chips and resistor etc. constitute, formed the circuit of expectation.
In addition, duplexer IC6, the power amplifier IC8 and the wireless set IC9 that constitute by nude film, 10 bonding is connected with wiring figure 2 by going between, simultaneously, with electric heating element is that SAW filter 7 and power amplifier IC8 are configured on the heat passage 5, and heat just dispels the heat from heat radiation figure 4 from heat passage 5 with via heat passage 5.
Then, the structure of wireless set IC9 has at least: the demodulator circuit that received signal is transformed to baseband signal; Be transformed to the modulation circuit that sends signal with sending with baseband signal; The baseband circuit that is connected with modulation circuit with demodulator circuit; VCO to demodulator circuit and modulation circuit supply oscillation signals according.
In addition, the terminal 3 that is arranged on the another side 1b side of medium substrate 1 has: the antenna terminal that is connected with antenna with transmitting-receiving; Signal input output end of base band; Supply is used to make the power supply terminal etc. of the power supply of circuit working.
On whole of a face 1a of medium substrate 1, the first insulating resin portion 11 that constitutes by synthetic resin etc. by formation such as coatings, become and covered lift-launch at the parts of a face 1a side of medium substrate 1 and the state of wiring figure 2, because this first insulating resin portion 11,10 grades that go between also become the state that has been fixed, and have formed high-frequency module for portable telephone apparatus of the present invention.
Below, based on Fig. 5, circuit about high-frequency module for portable telephone apparatus of the present invention with this spline structure describes, this high-frequency model is general in the pocket telephone of 4 kinds of modes of the PCS mode of the DCS mode of the GSM of 850MHz frequency range and 900MHz mode, 1800MHz frequency range, 1900MHz frequency range, and the input and output terminal of duplexer IC6 is connected with antenna (A).In addition, 4 outputs are connected with SAW filter 7a, 7b, 7c, 7d corresponding to each mode.In addition, 2 inputs are connected with the power amplifier IC8b that the DCS/PCS mode is used with the power amplifier IC8a that the GSM mode of 850/900MHz frequency range is used.Then, the input of the output of each SAW filter 7 and each power amplifier IC8 is connected with wireless set IC9.
Constituted with 4 kinds of corresponding LNA of mode (low noise amplifier) 9a~9d, demodulator circuit 9e, baseband circuit 9f, the 9g of local oscillation portion, modulation circuit 9h in the inside of wireless set IC9, sent efferent 9i, exciting amplifier 9j, 9k etc.In these structures, 9i is general in each mode for demodulator circuit 9e, baseband circuit 9f, the 9g of local oscillation portion, modulation circuit 9h, transmission efferent.
Then, in the receiving mode of the GSM of 850MHz frequency range mode, use SAW filter 7a and LNA9a, in the receiving mode of the GSM of 900MHz frequency range mode, use SAW filter 7b and LNA9b, in the receiving mode of DCS mode, use SAW filter 7c and LNA9c, in the receiving mode of PCS mode, use SAW filter 7d and LNA9d.In addition, in the sending mode of the GSM of 850MHz and 900MHz mode, use exciting amplifier 9i and power amplifier IC8a, in the sending mode of DCS and PCS mode, use exciting amplifier 9h and power amplifier IC8b.
Utilize not shown operating portion control antenna switch I C6 electronically, for example, in the receiving mode of the GSM of 850MHz mode, antenna (A) combines with SAW filter 7a.Received signal is imported among 2 frequency mixer M1, the M2 that constitute demodulator circuit 9e by LNA9a.Supply with the oscillation signals according of 90 ° of phase phasic differences to 2 frequency mixer M1, M2 from VCO (voltage-controlled oscillator) 9g1 of the 9g of local oscillation portion.VCO9g1 utilizes PLL circuit 9g2 control frequency of oscillation, and the frequency of oscillation just frequency with received signal is identical.Like this, received signal is baseband signal (I signal, a Q signal) by demodulator circuit 9e Direct Transform just, and this I signal and Q signal are input to interface 9f5 by IF band pass filter 9f1,9f2, IF amplifier 9f3,9f4 respectively.Interface 9f5 has 4 outputs corresponding with each mode.This baseband signal is input in the base band signal process circuit (B) that constitutes in the mother substrate (not shown) that carries this high-frequency model.
In addition, in sending mode, to the baseband signal of 2 frequency mixer M3, M4 inputs that constitute modulation circuit 9h from base band signal process circuit (B) with mode.Then, have 90 ° phase difference, be entered among frequency mixer M3, the M4, be modulated into the RF signal by baseband signal from the oscillation signals according of VCO9g1.This RF signal is sent out efferent 9i and is transformed to the transmission signal.Utilize PLL circuit 9i2 control to send the VCO9i1 of efferent 9i.In the output of exciting amplifier 9j, 9k input VCO9i1, also import to frequency mixer 9i3.Never illustrated oscillator is supplied with oscillator signal to frequency mixer 9i3.Then, by to the output of PLL circuit 9i2 input mixer 9i3 and the RF signal after the modulation, just the RF modulation signal is transformed to the transmission signal.Send signal by power amplifier IC8a power amplification, send to antenna (A) by duplexer IC6.The receiving mode of other modes and the work of sending mode are too.
In addition, Fig. 4 illustrates second embodiment of high-frequency module for portable telephone apparatus of the present invention, the structure of this second embodiment is described, be provided with the recess 1c at the end with the another side 1b side of the opposed locational medium substrate 1 of duplexer IC6, in recess 1c, with the opposed state of duplexer IC6 under, wireless set IC9 with the state configuration flip-chip shape that is connected with wiring figure 2 projections (バ Application プ), simultaneously, in recess 1c, be provided with the second insulating resin portion that constitutes by the synthetic resin that covers wireless set IC9 etc.
Structure in addition is identical with above-mentioned first embodiment, and mark duplicate numbers on same parts omits its explanation at this.

Claims (7)

1, a kind of high-frequency module for portable telephone apparatus is characterized in that, has:
Medium substrate with wiring figure; Be connected with above-mentioned wiring figure, carry out the duplexer IC of the conversion of accepting state and transmit status; Be connected with above-mentioned wiring figure, allow SAW filter that the signal of the assigned frequency in the received signal passes through, that constitute by the SAW element; Amplify the power amplifier IC that sends signal; Be connected with above-mentioned wiring figure, received signal be transformed to baseband signal, baseband signal is transformed to the wireless set IC that sends signal,
In mounting on the above-mentioned medium substrate of above-mentioned SAW filter and above-mentioned power amplifier IC, with the opposed position of lower surface of above-mentioned SAW filter and above-mentioned power amplifier IC on disposed heat passage.
2, high-frequency module for portable telephone apparatus as claimed in claim 1 is characterized in that,
Be configured in a face side of above-mentioned medium substrate to the above-mentioned SAW filter of major general and above-mentioned power amplifier IC, the another side side of above-mentioned medium substrate be provided with a plurality of terminals of being connected with above-mentioned wiring figure and with the heat radiation figure of above-mentioned heat passage conducting.
3, high-frequency module for portable telephone apparatus as claimed in claim 1 or 2 is characterized in that,
When forming above-mentioned duplexer IC, above-mentioned power amplifier IC and wireless set IC respectively with nude film, under the state of a face side that is configured in above-mentioned medium substrate, utilize lead-in wire to be connected with above-mentioned wiring figure, above-mentioned SAW filter configuration is provided with the first insulating resin portion of covering above-mentioned duplexer IC, above-mentioned power amplifier IC, wireless set IC and SAW filter in an above-mentioned face side of above-mentioned medium substrate in an above-mentioned face side of above-mentioned medium substrate.
4, high-frequency module for portable telephone apparatus as claimed in claim 1 or 2 is characterized in that,
When a face side of above-mentioned medium substrate disposes above-mentioned duplexer IC, above-mentioned power amplifier IC and above-mentioned SAW filter, be provided with the recess at the end in another side side with the opposed locational above-mentioned medium substrate of above-mentioned duplexer IC, in above-mentioned recess, with the opposed state of above-mentioned duplexer IC under, disposed the above-mentioned wireless set IC of flip-chip shape.
5, high-frequency module for portable telephone apparatus as claimed in claim 4 is characterized in that,
Forming above-mentioned duplexer IC and above-mentioned power amplifier IC respectively with nude film when, under the state of a face side that is configured in above-mentioned medium substrate, utilize lead-in wire to be connected with above-mentioned wiring figure, above-mentioned face side at above-mentioned medium substrate is provided with the first insulating resin portion that covers above-mentioned duplexer IC, above-mentioned power amplifier IC and above-mentioned SAW filter, simultaneously, in above-mentioned recess, be provided with the second insulating resin portion that covers above-mentioned wireless set IC.
6, high-frequency module for portable telephone apparatus as claimed in claim 1 is characterized in that,
Above-mentioned wireless set IC has at least: the demodulator circuit that above-mentioned received signal is transformed to baseband signal; Be transformed to the modulation circuit that sends signal with sending with baseband signal; The baseband circuit that is connected with above-mentioned modulation circuit with above-mentioned demodulator circuit; VCO to demodulator circuit and modulation circuit supply oscillation signals according.
7, high-frequency module for portable telephone apparatus as claimed in claim 6 is characterized in that,
Above-mentioned another side side at above-mentioned medium substrate has a plurality of terminals that are connected with above-mentioned wiring figure, and above-mentioned terminal has the power supply terminal that the antenna terminal, signal input output end of base band, the supply that are connected with antenna with transmitting-receiving are used to make the power supply of circuit working.
CNB2005101283422A 2004-10-19 2005-10-10 High-frequency module for portable telephone apparatus Expired - Fee Related CN100420159C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004303904 2004-10-19
JP2004303904A JP2006121147A (en) 2004-10-19 2004-10-19 High-frequency module for cellular phone
JP2004-303904 2004-10-19

Publications (2)

Publication Number Publication Date
CN1770649A true CN1770649A (en) 2006-05-10
CN100420159C CN100420159C (en) 2008-09-17

Family

ID=36538659

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005101283422A Expired - Fee Related CN100420159C (en) 2004-10-19 2005-10-10 High-frequency module for portable telephone apparatus

Country Status (3)

Country Link
JP (1) JP2006121147A (en)
KR (1) KR100732214B1 (en)
CN (1) CN100420159C (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103190082A (en) * 2010-11-24 2013-07-03 日立金属株式会社 Electronic component
CN106105025A (en) * 2014-03-11 2016-11-09 日本电波工业株式会社 Crystal oscillator with temperature chamber
CN108135071A (en) * 2016-12-01 2018-06-08 太阳诱电株式会社 Wireless module and its manufacturing method
CN108233974A (en) * 2016-12-14 2018-06-29 株式会社村田制作所 transceiver module
CN110830053A (en) * 2018-08-09 2020-02-21 株式会社村田制作所 High frequency module and communication device
CN111526227A (en) * 2019-02-04 2020-08-11 株式会社村田制作所 High frequency modules and communication devices
CN114208044A (en) * 2020-07-16 2022-03-18 株式会社藤仓 Wireless communication module
CN114628357A (en) * 2020-12-14 2022-06-14 株式会社村田制作所 Semiconductor device and semiconductor module

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028612A (en) 2006-07-20 2008-02-07 Matsushita Electric Ind Co Ltd COMMUNICATION DEVICE AND ELECTRONIC DEVICE USING THE SAME
US7978031B2 (en) 2008-01-31 2011-07-12 Tdk Corporation High frequency module provided with power amplifier
JP5146627B2 (en) 2011-02-15 2013-02-20 株式会社村田製作所 Multilayer wiring board and manufacturing method thereof
US8526890B1 (en) * 2012-03-11 2013-09-03 Mediatek Inc. Radio frequency modules capable of self-calibration
JP5117632B1 (en) 2012-08-21 2013-01-16 太陽誘電株式会社 High frequency circuit module
JP5285806B1 (en) * 2012-08-21 2013-09-11 太陽誘電株式会社 High frequency circuit module
JP5768941B2 (en) 2012-10-17 2015-08-26 株式会社村田製作所 High frequency module
CN106330236B (en) * 2016-09-28 2018-12-18 深圳三星通信技术研究有限公司 A kind of radio frequency remoto module and RF base station
US11038096B2 (en) 2017-10-15 2021-06-15 Skyworks Solutions, Inc. Stack assembly having electro-acoustic device
US12199572B2 (en) 2020-01-10 2025-01-14 Sumitomo Electric Industries, Ltd. High-frequency amplifier
JP2021158554A (en) * 2020-03-27 2021-10-07 株式会社村田製作所 High-frequency module and communication device
JP2021197569A (en) 2020-06-09 2021-12-27 株式会社村田製作所 High frequency module and communication device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057597A (en) * 2000-08-10 2002-02-22 Tdk Corp High frequency front end module
JP4529262B2 (en) * 2000-09-14 2010-08-25 ソニー株式会社 High frequency module device and manufacturing method thereof
JP2003032035A (en) * 2001-07-17 2003-01-31 Alps Electric Co Ltd Transmission reception unit
JP3861669B2 (en) * 2001-11-22 2006-12-20 ソニー株式会社 Manufacturing method of multichip circuit module
JP2003218272A (en) * 2002-01-25 2003-07-31 Sony Corp High frequency module and method of manufacturing the same
US6873529B2 (en) * 2002-02-26 2005-03-29 Kyocera Corporation High frequency module

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103190082B (en) * 2010-11-24 2015-09-16 日立金属株式会社 electronic components
CN103190082A (en) * 2010-11-24 2013-07-03 日立金属株式会社 Electronic component
US10256825B2 (en) 2014-03-11 2019-04-09 Nihon Dempa Kogyo Co., Ltd. Oven controlled crystal oscillator
CN106105025A (en) * 2014-03-11 2016-11-09 日本电波工业株式会社 Crystal oscillator with temperature chamber
CN106105025B (en) * 2014-03-11 2019-04-12 日本电波工业株式会社 Crystal oscillator with thermostat
CN108135071A (en) * 2016-12-01 2018-06-08 太阳诱电株式会社 Wireless module and its manufacturing method
CN108233974A (en) * 2016-12-14 2018-06-29 株式会社村田制作所 transceiver module
CN108233974B (en) * 2016-12-14 2021-03-23 株式会社村田制作所 transceiver module
CN110830053A (en) * 2018-08-09 2020-02-21 株式会社村田制作所 High frequency module and communication device
CN111526227A (en) * 2019-02-04 2020-08-11 株式会社村田制作所 High frequency modules and communication devices
CN111526227B (en) * 2019-02-04 2021-08-13 株式会社村田制作所 High frequency modules and communication devices
US11631659B2 (en) 2019-02-04 2023-04-18 Murata Manufacturing Co., Ltd. High-frequency module and communication apparatus
CN114208044A (en) * 2020-07-16 2022-03-18 株式会社藤仓 Wireless communication module
CN114628357A (en) * 2020-12-14 2022-06-14 株式会社村田制作所 Semiconductor device and semiconductor module

Also Published As

Publication number Publication date
JP2006121147A (en) 2006-05-11
KR100732214B1 (en) 2007-06-25
CN100420159C (en) 2008-09-17
KR20060054090A (en) 2006-05-22

Similar Documents

Publication Publication Date Title
CN1770649A (en) High-frequency module for portable telephone apparatus
US6861731B2 (en) Module and electronic device
CN1034044C (en) Switch circuit and method therefor
US7548138B2 (en) Compact integration of LC resonators
CN1190113C (en) Ceramic laminated device
US5929510A (en) Integrated electronic circuit
CN1409435A (en) High frequency module
CN1253964C (en) High frequency module
WO2002017502A1 (en) Radio transmitting/receiving device
WO1998019339A9 (en) Integrated electronic circuit
CN1652333A (en) High frequency circuit module
CN1498421A (en) Circuit boards for high-frequency modules and high-frequency modules
CN1574664A (en) Multi-band transceiver and radio communication device using the transceiver
CN1543065A (en) Duplexers Using Surface Acoustic Wave Filters
US9844138B2 (en) Multilayer wiring board
CN1881810A (en) Radio frequency circuit for multi-mode operation
US20040113719A1 (en) High-frequency module
CN1694250A (en) High-frequency circuit module and radio communication apparatus
CN1839554A (en) RF circuit module
JP2005026368A (en) Laminated substrate having heat dissipation via hole and power amplifier module using the substrate
WO2001095679A1 (en) Module for radio communication
CN1252918C (en) Sonic surface wave device and wave separator
CN1367550A (en) Non-reciprocal circuit element and communication device
CN1468046A (en) Electronic component mounting board, electronic component module, method for manufacturing electronic component mounting board, and communication device
CN113690621B (en) Miniaturized high efficiency bluetooth antenna based on multilayer PCB board

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080917

Termination date: 20101010