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CN1768376A - Magnetic recording medum, production process therefor, and magnetic recording and reproducing apparatus - Google Patents

Magnetic recording medum, production process therefor, and magnetic recording and reproducing apparatus Download PDF

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CN1768376A
CN1768376A CN 200480008701 CN200480008701A CN1768376A CN 1768376 A CN1768376 A CN 1768376A CN 200480008701 CN200480008701 CN 200480008701 CN 200480008701 A CN200480008701 A CN 200480008701A CN 1768376 A CN1768376 A CN 1768376A
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magnetic
layer
recording medium
magnetic recording
magnetic layer
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大泽弘
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Resonac Holdings Corp
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Showa Denko KK
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Abstract

本发明的目的是提供一种可以降低介质噪声的磁记录介质。本发明提供一种磁记录介质,其以如下顺序在非磁性衬底上包括至少非磁性底涂层、第一磁性层、非磁性耦合层、第二磁性层、以及保护层,其中第二磁性层与第一磁性层反铁磁性耦合,以及第一磁性层由CoCrZr合金制成。

Figure 200480008701

The purpose of this invention is to provide a magnetic recording medium that can reduce media noise. This invention provides a magnetic recording medium comprising, in the following order on a non-magnetic substrate, at least a non-magnetic undercoating layer, a first magnetic layer, a non-magnetic coupling layer, a second magnetic layer, and a protective layer, wherein the second magnetic layer is antiferromagnetically coupled to the first magnetic layer, and the first magnetic layer is made of a CoCrZr alloy.

Figure 200480008701

Description

磁记录介质、其制造方法及磁记录再现装置Magnetic recording medium, manufacturing method thereof, and magnetic recording and reproducing device

相关申请的交叉引用Cross References to Related Applications

依照35U.S.C.§119(e),本申请要求享有2003年4月11日提交的美国临时申请60/461802的优先权。Pursuant to 35 U.S.C. §119(e), this application claims priority to US Provisional Application 60/461802, filed April 11, 2003.

本申请基于2003年4月7日在日本提交的日本专利申请2003-103367,其内容在此引入作为参考。This application is based on Japanese Patent Application No. 2003-103367 filed in Japan on April 7, 2003, the contents of which are incorporated herein by reference.

技术领域technical field

本发明涉及用于硬盘驱动器或类似装置中的磁记录介质、用于制造该磁记录介质的方法、以及磁记录和再现装置。本发明尤其涉及一种其中减少了介质噪声的磁记录介质、用于制造该磁记录介质的方法、以及磁记录和再现装置。The present invention relates to a magnetic recording medium used in a hard disk drive or the like, a method for manufacturing the magnetic recording medium, and a magnetic recording and reproducing device. In particular, the present invention relates to a magnetic recording medium in which medium noise is reduced, a method for manufacturing the magnetic recording medium, and a magnetic recording and reproducing apparatus.

背景技术Background technique

目前,作为一种磁记录和再现装置的硬盘驱动器(HDD)的记录密度正以每年60%的速率增长,并且预计这种趋势还在继续。Currently, the recording density of a hard disk drive (HDD), which is a magnetic recording and reproducing device, is increasing at a rate of 60% per year, and this trend is expected to continue.

希望用于硬盘驱动器中的磁记录介质具有增大的记录密度,从而就要求记录介质具有增大的矫顽力和减少的噪声。Magnetic recording media used in hard disk drives are desired to have increased recording density, thereby requiring the recording media to have increased coercive force and reduced noise.

用于硬盘驱动器中的主流磁记录介质具有这样的结构,其中通过溅射将金属膜层叠在磁记录介质衬底上。Main magnetic recording media used in hard disk drives have a structure in which a metal film is laminated on a magnetic recording medium substrate by sputtering.

用作磁记录介质衬底的衬底包括铝衬底和玻璃衬底,其得到广泛使用。这样形成通常采用的铝衬底,通过化学镀在镜面抛光的Al-Mg合金衬底上形成一层厚度为约10μm的NiP膜,并镜面抛光表面。对于玻璃衬底,采用无定形玻璃衬底和玻璃-陶瓷衬底。在使用任一种玻璃衬底前都对其进行镜面抛光。Substrates used as magnetic recording medium substrates include aluminum substrates and glass substrates, which are widely used. In this way, a commonly used aluminum substrate is formed, and a layer of NiP film with a thickness of about 10 μm is formed on a mirror-polished Al-Mg alloy substrate by electroless plating, and the surface is mirror-polished. As the glass substrate, an amorphous glass substrate and a glass-ceramic substrate are used. Mirror polish any glass substrate before using it.

目前,通常用于硬盘驱动器中的磁记录介质具有这样的结构,其中在非磁性衬底上依次形成非磁性底涂层(例如,NiAl合金、Cr、或Cr合金)、非磁性中间层(例如,CoCr合金或CoCrTa合金)、磁性层(例如,Co-Cr-Pt-Ta基合金或Co-Cr-Pt-B基合金)、以及保护层(例如碳),其中保护层被润滑层覆盖。At present, magnetic recording media generally used in hard disk drives have a structure in which a nonmagnetic undercoat layer (for example, NiAl alloy, Cr, or Cr alloy), a nonmagnetic intermediate layer (for example, , CoCr alloy or CoCrTa alloy), a magnetic layer (eg, Co-Cr-Pt-Ta-based alloy or Co-Cr-Pt-B-based alloy), and a protective layer (eg, carbon), wherein the protective layer is covered by a lubricating layer.

为了提高记录密度,有必要在高频率记录期间提高SNR(信噪比)。Kenneth,E.J.在JOURNAL OF APPLIED PHYSICS 2000年第87卷第9期5365页发表的文章“Magnetic materials and structures for thin-filmrecording media”中阐述了,为了改善SNR,有必要使记录层(磁性层)中的晶体颗粒的直径较小并均匀。In order to increase recording density, it is necessary to increase SNR (signal-to-noise ratio) during high-frequency recording. Kenneth, E.J. explained in the article "Magnetic materials and structures for thin-film recording media" published in JOURNAL OF APPLIED PHYSICS 2000, Volume 87, No. 9, Page 5365, that in order to improve SNR, it is necessary to make the recording layer (magnetic layer) The diameter of the crystal particles is small and uniform.

然而,当将记录层(磁性层)中的晶体颗粒的直径制成很小并均匀以改善SNR时,晶体颗粒的体积变得更小,并且晶体颗粒的热稳定性差。这在Sharat Batra等人在IEEE Trans.Magn.1999年第35卷第5期2736页发表的文章“Temperature Dependence of Thermal Stability inLongitudinal Media”中得到公开。However, when the diameter of the crystal grains in the recording layer (magnetic layer) is made small and uniform to improve SNR, the volume of the crystal grains becomes smaller, and the thermal stability of the crystal grains is poor. This is disclosed in the article "Temperature Dependence of Thermal Stability in Longitudinal Media" published by Sharat Batra et al. in IEEE Trans. Magn. 1999, Vol. 35, No. 5, p. 2736.

作为对该问题的一个解决办法,日本未审查专利申请第一次公开2001-56921已经提出一种磁记录介质,其中在由钌等制成的非磁性耦合层的上面和下面分别形成磁性层,并使这些磁性层的磁化方向彼此相反并平行。As a solution to this problem, Japanese Unexamined Patent Application First Publication No. 2001-56921 has proposed a magnetic recording medium in which magnetic layers are respectively formed above and below a nonmagnetic coupling layer made of ruthenium or the like, And the magnetization directions of these magnetic layers are opposite to and parallel to each other.

在该磁记录介质中,由于两个磁性层的磁化方向彼此相反,参与磁记录和再现的部分比整个记录层充分薄。从而可以改善SNR。另一方面,在整个记录层中的晶体颗粒的体积变大;从而可以改善热稳定性。In this magnetic recording medium, since the magnetization directions of the two magnetic layers are opposite to each other, the portion involved in magnetic recording and reproduction is sufficiently thinner than the entire recording layer. Thereby the SNR can be improved. On the other hand, the volume of crystal grains in the entire recording layer becomes larger; thus, thermal stability can be improved.

采用这种技术的介质一般称之为AFC介质(反铁磁性耦合介质)或SFM(合成亚铁磁性介质)。在这里,简单地将其称作AFC介质或介质。Media using this technique are generally referred to as AFC media (Antiferromagnetic Coupling Media) or SFM (Synthetic Ferrimagnetic Media). Here, it is simply referred to as AFC media or media.

在日本未审查专利申请第一次公开2001-56921中公开的磁记录介质中,在非磁性耦合层的上面和下面各形成一磁性层以将其夹在中间。在该磁记录介质中,在非磁性衬底侧形成的磁性层是铁磁性层。该铁磁性层由Co、Ni、Fe、Ni基合金、Fe基合金、Co基合金(包含CoCrTa、CoCrPt以及CoCrPtM)中的至少一种的材料制成。并且,符号M表示B、Mo、Nb、Ta、W、Cu或含有这些元素的合金。In the magnetic recording medium disclosed in Japanese Unexamined Patent Application First Publication No. 2001-56921, a magnetic layer is formed each above and below the nonmagnetic coupling layer to sandwich them. In this magnetic recording medium, the magnetic layer formed on the nonmagnetic substrate side is a ferromagnetic layer. The ferromagnetic layer is made of at least one material selected from Co, Ni, Fe, Ni-based alloys, Fe-based alloys, and Co-based alloys (including CoCrTa, CoCrPt, and CoCrPtM). In addition, the symbol M represents B, Mo, Nb, Ta, W, Cu, or an alloy containing these elements.

然而,在常规记录介质中,难以充分地减少介质噪声地以响应增大的记录密度。However, in conventional recording media, it is difficult to sufficiently reduce media noise in response to increased recording density.

本发明基于上述完成,从而本发明的一个目的是,提供一种可以充分减少介质噪声的磁记录介质、一种制造该磁记录介质的方法、以及一种包括该磁记录介质的磁记录和再现装置。The present invention is accomplished based on the above, so that an object of the present invention is to provide a magnetic recording medium capable of sufficiently reducing medium noise, a method of manufacturing the magnetic recording medium, and a magnetic recording and reproducing system including the magnetic recording medium. device.

发明内容Contents of the invention

本发明的发明人已经进行了深入研究以解决这些问题,并且发现,通过采用CoCrZr合金作为第一磁性层,可以降低介质噪声并实现高记录密度。本发明基于该发现完成。The inventors of the present invention have conducted intensive studies to solve these problems, and found that by employing a CoCrZr alloy as the first magnetic layer, it is possible to reduce medium noise and achieve high recording density. The present invention was accomplished based on this finding.

(1)解决这些问题的第一发明是一种磁记录介质,其以如下顺序在非磁性衬底上包括至少非磁性底涂层、第一磁性层、非磁性耦合层、第二磁性层、以及保护层,其中所述第二磁性层与所述第一磁性层反铁磁性耦合;以及所述第一磁性层由CoCrZr合金制成。(1) The first invention to solve these problems is a magnetic recording medium comprising, on a nonmagnetic substrate, at least a nonmagnetic undercoat layer, a first magnetic layer, a nonmagnetic coupling layer, a second magnetic layer, and a protective layer, wherein the second magnetic layer is antiferromagnetically coupled to the first magnetic layer; and the first magnetic layer is made of a CoCrZr alloy.

(2)解决这些问题的第二发明是一种磁记录介质,其以如下顺序在非磁性衬底上包括至少非磁性底涂层、第一磁性层、非磁性耦合层、第二磁性层、非磁性耦合层、第三磁性层、以及保护层,其中所述第三磁性层与所述第二磁性层反铁磁性耦合;所述第二磁性层与所述第一磁性层反铁磁性耦合;以及所述第一磁性层由CoCrZr合金制成。(2) The second invention to solve these problems is a magnetic recording medium comprising, on a nonmagnetic substrate, at least a nonmagnetic undercoat layer, a first magnetic layer, a nonmagnetic coupling layer, a second magnetic layer, a non-magnetic coupling layer, a third magnetic layer, and a protective layer, wherein the third magnetic layer is antiferromagnetically coupled to the second magnetic layer; the second magnetic layer is antiferromagnetically coupled to the first magnetic layer ; and the first magnetic layer is made of CoCrZr alloy.

(3)解决这些问题的第三发明是如发明(1)或(2)所述的磁记录介质,其中所述第一磁性层包括5~22原子%的Cr和1~10原子%的Zr。(3) The third invention for solving these problems is the magnetic recording medium as described in the invention (1) or (2), wherein the first magnetic layer comprises 5 to 22 atomic % of Cr and 1 to 10 atomic % of Zr .

(4)解决这些问题的第四发明是如发明(1)至(3)中任一所述的磁记录介质,其中所述第一磁性层的厚度在0.5~10nm的范围中。(4) A fourth invention that solves these problems is the magnetic recording medium as described in any one of inventions (1) to (3), wherein the thickness of the first magnetic layer is in the range of 0.5 to 10 nm.

(5)解决这些问题的第五发明是如发明(1)至(4)中任一所述的磁记录介质,其中所述非磁性耦合层由选自于Ru、Rh、Ir、Cr、Re、Ru基合金、Rh基合金、Ir基合金、Cr基合金、以及Re基合金中的至少一种制成;以及所述非磁性耦合层的厚度在0.5~1.5nm的范围中。(5) The fifth invention that solves these problems is the magnetic recording medium as described in any one of inventions (1) to (4), wherein the non-magnetic coupling layer is selected from Ru, Rh, Ir, Cr, Re , Ru-based alloy, Rh-based alloy, Ir-based alloy, Cr-based alloy, and Re-based alloy; and the thickness of the non-magnetic coupling layer is in the range of 0.5-1.5 nm.

(6)解决这些问题的第六发明是如发明(1)至(5)中任一所述的磁记录介质,其中所述非磁性底涂层具有多层结构,包括由Cr制成的层或由Cr基合金制成的层,所述Cr基合金包括Cr和选自于Ti、Mo、Al、Ta、W、Ni、B、Si及V中的至少一种。(6) A sixth invention that solves these problems is the magnetic recording medium as described in any one of inventions (1) to (5), wherein the nonmagnetic undercoat layer has a multilayer structure including a layer made of Cr Or a layer made of a Cr-based alloy including Cr and at least one selected from Ti, Mo, Al, Ta, W, Ni, B, Si and V.

(7)解决这些问题的第七发明是如发明(1)至(6)中任一所述的磁记录介质,其中所述非磁性底涂层具有多层结构,包括含有NiAl基合金、RuAl基合金、以及Cr基合金中的一种的层;其中所述Cr基合金包括Cr和Ti、Mo、Al、Ta、W、Ni、B、Si及V中的至少一种。(7) The seventh invention that solves these problems is the magnetic recording medium as described in any one of inventions (1) to (6), wherein the non-magnetic undercoat layer has a multilayer structure including NiAl-based alloy, RuAl A layer of one of Cr-based alloys and Cr-based alloys; wherein the Cr-based alloy includes Cr and at least one of Ti, Mo, Al, Ta, W, Ni, B, Si and V.

(8)解决这些问题的第八发明是如发明(1)至(7)中任一所述的磁记录介质,其中所述非磁性衬底是玻璃衬底和硅衬底之一。(8) An eighth invention that solves these problems is the magnetic recording medium as described in any one of inventions (1) to (7), wherein the nonmagnetic substrate is one of a glass substrate and a silicon substrate.

(9)解决这些问题的第九发明是如发明(1)至(8)中任一所述的磁记录介质,其中所述非磁性衬底包含由Al、Al合金、玻璃以及硅中的一种制成的衬底;在所述衬底上,由NiP或NiP合金制成的膜被形成。(9) The ninth invention that solves these problems is the magnetic recording medium according to any one of inventions (1) to (8), wherein the non-magnetic substrate is made of one of Al, Al alloy, glass, and silicon. A substrate made of this kind; on the substrate, a film made of NiP or a NiP alloy is formed.

(10)解决这些问题的第十发明是如发明(1)至(9)中任一所述的磁记录介质,其中所述第二磁性层由CoCrTa基合金、CoCrPtTa基合金、CoCrPtB基合金和CoCrPtBM基合金中的至少一种制成(其中,M表示Ta和Cu中的至少一种)。(10) The tenth invention that solves these problems is the magnetic recording medium according to any one of inventions (1) to (9), wherein the second magnetic layer is made of a CoCrTa-based alloy, a CoCrPtTa-based alloy, a CoCrPtB-based alloy, and At least one of CoCrPtBM-based alloys (where M represents at least one of Ta and Cu).

(11)解决这些问题的第十一发明是如发明(2)至(9)中任一所述的磁记录介质,其中所述第二磁性层和所述第三磁性层由CoCrTa基合金、CoCrPtTa基合金、CoCrPtB基合金以及CoCrPtBM基合金中的至少一种制成(其中M表示Ta和Cu中的至少一种)。(11) The eleventh invention that solves these problems is the magnetic recording medium according to any one of inventions (2) to (9), wherein the second magnetic layer and the third magnetic layer are made of a CoCrTa-based alloy, At least one of CoCrPtTa-based alloys, CoCrPtB-based alloys, and CoCrPtBM-based alloys (wherein M represents at least one of Ta and Cu).

(12)解决这些问题的第十二发明是一种制造磁记录介质的方法,所述磁记录介质以如下顺序在非磁性衬底上包括至少非磁性底涂层、第一磁性层、非磁性耦合层、第二磁性层以及保护层;其中所述第二磁性层与所述第一磁性层反铁磁性耦合,其中所述方法包括如下步骤,其中由CoCrZr合金制成所述第一磁性层。(12) The twelfth invention for solving these problems is a method of manufacturing a magnetic recording medium comprising, on a nonmagnetic substrate, at least a nonmagnetic undercoat layer, a first magnetic layer, a nonmagnetic a coupling layer, a second magnetic layer, and a protective layer; wherein the second magnetic layer is antiferromagnetically coupled to the first magnetic layer, wherein the method includes the step, wherein the first magnetic layer is made of a CoCrZr alloy .

(13)解决这些问题的第十三发明是一种制造磁记录介质的方法,所述磁记录介质以如下顺序在非磁性衬底上包括至少非磁性底涂层、第一磁性层、非磁性耦合层、第二磁性层、非磁性耦合层、第三磁性层、以及保护层;所述第三磁性层与所述第二磁性层反铁磁性耦合;以及所述第二磁性层与所述第一磁性层反铁磁性耦合,其中所述方法包括如下步骤,其中由CoCrZr合金制成所述第一磁性层。(13) A thirteenth invention that solves these problems is a method of manufacturing a magnetic recording medium comprising, on a nonmagnetic substrate, at least a nonmagnetic undercoat layer, a first magnetic layer, a nonmagnetic a coupling layer, a second magnetic layer, a non-magnetic coupling layer, a third magnetic layer, and a protective layer; the third magnetic layer is antiferromagnetically coupled to the second magnetic layer; and the second magnetic layer is coupled to the A first magnetic layer is antiferromagnetically coupled, wherein the method includes the step, wherein the first magnetic layer is made of a CoCrZr alloy.

(14)解决这些问题的第十四发明是一种磁记录和再现装置,包括如权利要求(1)至(11)中任一所述的磁记录介质、以及用于在所述磁记录介质中记录信息并从所述磁记录介质再现信息的磁头。(14) A fourteenth invention that solves these problems is a magnetic recording and reproducing apparatus comprising the magnetic recording medium as described in any one of claims (1) to (11), and A magnetic head that records information in and reproduces information from the magnetic recording medium.

附图说明Description of drawings

图1为示出本发明磁记录介质的第一实施例的截面图;1 is a sectional view showing a first embodiment of a magnetic recording medium of the present invention;

图2为示出本发明磁记录介质的第二实施例的截面图;2 is a cross-sectional view showing a second embodiment of the magnetic recording medium of the present invention;

图3为示出本发明磁记录介质的第三实施例的截面图;3 is a cross-sectional view showing a third embodiment of the magnetic recording medium of the present invention;

图4为示出本发明磁记录介质的第四实施例的截面图;4 is a sectional view showing a fourth embodiment of the magnetic recording medium of the present invention;

图5为示出本发明磁记录介质的第五实施例的截面图;5 is a sectional view showing a fifth embodiment of the magnetic recording medium of the present invention;

图6用于解释Hex测量方法;Figure 6 is used to explain the Hex measurement method;

图7为示出根据本发明的示例磁记录和再现装置的示意图。FIG. 7 is a schematic diagram showing an example magnetic recording and reproducing apparatus according to the present invention.

具体实施方式Detailed ways

图1示意性地示出了本发明磁记录介质的第一实施例。在如图1所示的磁记录介质中,以如下顺序在非磁性衬底1上依次层叠非磁性底涂层2、第一磁性层3、非磁性耦合层4、第二磁性层5、保护层6、以及润滑层7。Fig. 1 schematically shows a first embodiment of the magnetic recording medium of the present invention. In the magnetic recording medium shown in FIG. 1, a nonmagnetic undercoat layer 2, a first magnetic layer 3, a nonmagnetic coupling layer 4, a second magnetic layer 5, a protective Layer 6, and lubricating layer 7.

图2示意性地示出了本发明磁记录介质的第二实施例。在如图2所示的磁记录介质中,以如下顺序在非磁性衬底1上依次层叠非磁性底涂层2、第一磁性层3、第一非磁性耦合层4、第二磁性层5、第二非磁性耦合层8、第三磁性层9、保护层6、以及润滑层7。Fig. 2 schematically shows a second embodiment of the magnetic recording medium of the present invention. In the magnetic recording medium shown in FIG. 2, a non-magnetic undercoat layer 2, a first magnetic layer 3, a first non-magnetic coupling layer 4, and a second magnetic layer 5 are sequentially stacked on a non-magnetic substrate 1 in the following order , the second non-magnetic coupling layer 8 , the third magnetic layer 9 , the protective layer 6 , and the lubricating layer 7 .

非磁性衬底1优选为其上包括NiP或NiP基合金膜的Al衬底或Al合金衬底。The non-magnetic substrate 1 is preferably an Al substrate or an Al alloy substrate including a NiP or NiP-based alloy film thereon.

非磁性衬底1的实例还包括由非金属材料制成的衬底,例如玻璃、陶瓷、硅、碳化硅、碳或树脂。还可以使用由这样的非金属材料制成、并在该非金属材料上包含一层NiP膜或NiP基合金膜的衬底。Examples of the nonmagnetic substrate 1 also include substrates made of nonmetallic materials such as glass, ceramics, silicon, silicon carbide, carbon, or resin. A substrate made of such a non-metallic material and comprising a NiP film or NiP-based alloy film on the non-metallic material can also be used.

尤其是,非磁性衬底1优选为这样的衬底,其由选自Al、Al合金、玻璃以及硅中的一种制成、并包括NiP膜或NiP合金膜。In particular, non-magnetic substrate 1 is preferably a substrate made of one selected from Al, Al alloy, glass, and silicon, and including a NiP film or a NiP alloy film.

从表面平面度方面考虑,非金属材料优选为玻璃或硅。尤其是,从成本和耐久性方面考虑,更优选使用玻璃衬底。可以用作非磁性衬底的玻璃材料的实例包括无定形玻璃和玻璃陶瓷。In terms of surface flatness, the non-metallic material is preferably glass or silicon. In particular, it is more preferable to use a glass substrate from the viewpoints of cost and durability. Examples of glass materials that can be used as the nonmagnetic substrate include amorphous glass and glass ceramics.

无定形玻璃的实例包括通常使用的苏打石灰玻璃、铝硼硅酸盐(aluminoborosilicate)玻璃和硅铝酸盐玻璃。玻璃陶瓷的实例包括含锂的玻璃陶瓷。Examples of amorphous glass include commonly used soda lime glass, aluminoborosilicate glass, and aluminosilicate glass. Examples of glass ceramics include lithium-containing glass ceramics.

陶瓷衬底的实例包括主要含有通常使用的氧化铝、氮化硅或类似化合物的烧结产品,及其纤维强化产品。Examples of the ceramic substrate include sintered products mainly containing commonly used alumina, silicon nitride or similar compounds, and fiber-reinforced products thereof.

在磁记录和再现装置中,为了提高记录密度,需要降低磁头的浮动高度。因此,非磁性衬底1需要具有改善的表面平面度。具体地说,非磁性衬底1需要具有的表面平均粗糙度(Ra)为2nm或更小,优选为1nm或更小。In a magnetic recording and reproducing apparatus, in order to increase the recording density, it is necessary to lower the flying height of the magnetic head. Therefore, the non-magnetic substrate 1 needs to have improved surface flatness. Specifically, the non-magnetic substrate 1 needs to have a surface average roughness (Ra) of 2 nm or less, preferably 1 nm or less.

非磁性衬底1优选为具有纹理槽(texturing groove),这通过在其表面上进行纹理化工艺来形成。优选实施纹理化工艺,从而非磁性衬底1的表面平均粗糙度在0.1nm~0.7nm的范围中,(更优选为在0.1nm~0.5nm的范围中,最优选为在0.1nm~0.35nm的范围中)。从增强磁记录介质圆周方向的磁各向异性方面考虑,优选在非磁性衬底1的基本圆周方向上形成纹理槽。The non-magnetic substrate 1 preferably has texturing grooves formed by performing a texturing process on its surface. The texturing process is preferably carried out so that the average surface roughness of the non-magnetic substrate 1 is in the range of 0.1 nm to 0.7 nm, (more preferably in the range of 0.1 nm to 0.5 nm, most preferably in the range of 0.1 nm to 0.35 nm range). From the viewpoint of enhancing the magnetic anisotropy in the circumferential direction of the magnetic recording medium, it is preferable to form textured grooves in the substantially circumferential direction of the non-magnetic substrate 1 .

非磁性衬底1优选具有0.3nm或更小的表面微小波度(Wa)(更优选为0.25nm或更小)。The non-magnetic substrate 1 preferably has a surface minute waviness (Wa) of 0.3 nm or less (more preferably 0.25 nm or less).

从磁头的浮动稳定性方面考虑,非磁性衬底1的端表面和侧表面的至少一个倒角部分(chamfer section)优选具有10nm或更小的表面平均粗糙度(Ra)(更优选为9.5nm或更小)。Considering the floating stability of the magnetic head, at least one chamfer section (chamfer section) of the end surface and the side surface of the non-magnetic substrate 1 preferably has a surface average roughness (Ra) of 10 nm or less (more preferably 9.5 nm or smaller).

表面微小波度(Wa)可以由例如表面平均粗糙度仪(P-12,美国KLM-Tencor的产品)确定为在80μm的范围内测量的表面平均粗糙度值。Surface minute waviness (Wa) can be determined by, for example, a surface average roughness meter (P-12, a product of KLM-Tencor, USA) as a surface average roughness value measured within a range of 80 μm.

在非磁性衬底1上形成非磁性底涂层2。非磁性底涂层2可以是一层结构,也可以是包括多个层的多层结构。On a nonmagnetic substrate 1, a nonmagnetic undercoat layer 2 is formed. The nonmagnetic undercoat layer 2 may have a one-layer structure or a multi-layer structure including a plurality of layers.

非磁性底涂层2可以由含有Cr和Ti、Mo、Al、Ta、W、Ni、B、Si和V中至少一种的Cr合金制成。非磁性底涂层2还可以由Cr制成。The nonmagnetic undercoat layer 2 may be made of a Cr alloy containing Cr and at least one of Ti, Mo, Al, Ta, W, Ni, B, Si, and V. The non-magnetic undercoat layer 2 can also be made of Cr.

当非磁性底涂层2具有多层结构时,构成非磁性底涂层2的层中的至少一层可以由Cr合金或Cr制成。When the nonmagnetic undercoat layer 2 has a multilayer structure, at least one of the layers constituting the nonmagnetic undercoat layer 2 may be made of Cr alloy or Cr.

非磁性底涂层2优选由NiAl基合金、RuAl基合金以及Cr合金中的至少一种制成,所述Cr合金中含有Cr及Ti、Mo、Al、Ta、W、Ni、B、Si和V中的至少一种。The non-magnetic primer layer 2 is preferably made of at least one of NiAl-based alloys, RuAl-based alloys and Cr alloys, which contain Cr and Ti, Mo, Al, Ta, W, Ni, B, Si and At least one of V.

当非磁性底涂层2具有多层结构时,构成非磁性底涂层2的层中的至少一层可以由NiAl基合金、RuAl基合金和Cr合金中的至少一种制成。When the nonmagnetic undercoat layer 2 has a multilayer structure, at least one of the layers constituting the nonmagnetic undercoat layer 2 may be made of at least one of NiAl-based alloys, RuAl-based alloys, and Cr alloys.

具有单层结构的非磁性底涂层2的厚度优选为在1~40nm的范围中(更优选为3~15nm)。如果非磁性底涂层2的厚度小于1nm,则晶体生长不充分。如果其超过40nm,则晶体颗粒太大,从而导致介质噪声增大。The thickness of the nonmagnetic undercoat layer 2 having a single-layer structure is preferably in the range of 1 to 40 nm (more preferably 3 to 15 nm). If the thickness of the nonmagnetic undercoat layer 2 is less than 1 nm, crystal growth is insufficient. If it exceeds 40nm, the crystal grains are too large, resulting in increased medium noise.

非磁性底涂层2优选具有多层结构。如果非磁性底涂层2具有多层结构,则晶体是定向的,并且其电磁转换特征得到改善。The nonmagnetic undercoat layer 2 preferably has a multilayer structure. If the nonmagnetic undercoat layer 2 has a multilayer structure, crystals are oriented, and its electromagnetic conversion characteristics are improved.

当形成具有多层结构的非磁性底涂层2时,构成非磁性底涂层2的层的厚度可以在1~40nm的范围中(更优选为3~15nm)。如果该层的厚度小于1nm,则晶体生长不充分。相反,如果其超过40nm,则晶体颗粒太大,从而导致介质噪声增大。When forming the nonmagnetic undercoat layer 2 having a multilayer structure, the thickness of the layers constituting the nonmagnetic undercoat layer 2 may be in the range of 1 to 40 nm (more preferably, 3 to 15 nm). If the thickness of the layer is less than 1 nm, crystal growth is insufficient. On the contrary, if it exceeds 40 nm, the crystal grains are too large, resulting in an increase in medium noise.

具有多层结构的非磁性底涂层2的总厚度可以在3~150nm的范围中。The total thickness of the non-magnetic undercoat layer 2 having a multilayer structure may be in the range of 3 to 150 nm.

第一磁性层3由CoCrZr基合金制成。在第一磁性层3中,从SNR方面考虑,Cr的含量优选为在5~22原子%的范围中,而Zr的含量优选为在1~10原子%的范围中。The first magnetic layer 3 is made of a CoCrZr-based alloy. In the first magnetic layer 3 , the content of Cr is preferably in the range of 5 to 22 atomic %, and the content of Zr is preferably in the range of 1 to 10 atomic % from the viewpoint of SNR.

第一磁性层3的厚度优选为在0.5~10nm的范围中(更优选为0.5~5nm)。如果厚度小于0.5nm,则晶体外延生长不充分,从而不能获得足够的矫顽力。相反,如果厚度超过10nm,其中未发生反铁磁性耦合的部分增大了介质噪声。The thickness of the first magnetic layer 3 is preferably in the range of 0.5 to 10 nm (more preferably 0.5 to 5 nm). If the thickness is less than 0.5 nm, crystal epitaxial growth is insufficient, so that sufficient coercive force cannot be obtained. On the contrary, if the thickness exceeds 10 nm, the portion where antiferromagnetic coupling does not occur increases medium noise.

制造第一磁性层3的CoCrZr基合金可以包括其它具有辅助效果(例如,增强定向,减少颗粒尺寸)的元素。所述其它元素的实例包括选自Ti、V、Mn、Hf、Ru、B、Al、Si和W中的一种或多种。其它元素的总含量优选为10原子%或更少。如果总含量超过10原子%,则效果减弱(增强定向或减少颗粒尺寸)。如果其含量小于0.1原子%,则效应同样减弱。因此,更优选将总含量控制在0.1~10原子%的范围中。The CoCrZr-based alloy from which the first magnetic layer 3 is made may include other elements having auxiliary effects (eg, enhanced orientation, reduced grain size). Examples of the other elements include one or more selected from Ti, V, Mn, Hf, Ru, B, Al, Si, and W. The total content of other elements is preferably 10 atomic % or less. If the total content exceeds 10 atomic %, the effect is weakened (increased orientation or reduced particle size). If its content is less than 0.1 atomic %, the effect is also weakened. Therefore, it is more preferable to control the total content in the range of 0.1 to 10 atomic %.

非磁性耦合层4和8优选由选自Ru、Rh、Ir、Cr、Re、Ru基合金、Rh基合金、Ir基合金、Cr基合金和Re基合金中的一种制成。The nonmagnetic coupling layers 4 and 8 are preferably made of one selected from Ru, Rh, Ir, Cr, Re, Ru-based alloys, Rh-based alloys, Ir-based alloys, Cr-based alloys, and Re-based alloys.

由于这些材料具有大交换能常数,当非磁性耦合层由这些材料之一制成时,可能使磁性层(位于非磁性耦合层的上方和下方)的磁化方向趋于这样的条件,在所述条件中,磁化方向彼此相反且相互平行。Since these materials have a large exchange energy constant, when the non-magnetic coupling layer is made of one of these materials, it is possible to make the magnetization direction of the magnetic layer (located above and below the non-magnetic coupling layer) tend to such a condition that in the conditions, the magnetization directions are opposite to each other and parallel to each other.

尤其是,由于Ru在这些材料中具有最大的耦合能系数,因此优选在非磁性耦合层4和8中使用Ru。In particular, since Ru has the largest coupling energy coefficient among these materials, it is preferable to use Ru in the nonmagnetic coupling layers 4 and 8 .

耦合能系数表示磁性层(位于非磁性耦合层的上方和下方)之间的交换相互作用的强度。非磁性耦合层优选具有更大的耦合能系数。The coupling energy coefficient represents the strength of the exchange interaction between the magnetic layers (located above and below the non-magnetic coupling layer). The non-magnetic coupling layer preferably has a larger coupling energy coefficient.

非磁性耦合层4和8的厚度优选为在0.5~1.5nm的范围中(更优选在0.6~1.0nm的范围中)。如果非磁性耦合层4和8的厚度在这个范围之内,则非磁性耦合层4和8具有足够的反铁磁性耦合。The thickness of the nonmagnetic coupling layers 4 and 8 is preferably in the range of 0.5 to 1.5 nm (more preferably in the range of 0.6 to 1.0 nm). If the thicknesses of the nonmagnetic coupling layers 4 and 8 are within this range, the nonmagnetic coupling layers 4 and 8 have sufficient antiferromagnetic coupling.

上述非磁性耦合层没有被用于到如图1所示的非磁性耦合层4中,而是可以被用于如图2所示的第一和第二非磁性耦合层4和8中。The above-mentioned nonmagnetic coupling layer is not used in the nonmagnetic coupling layer 4 shown in FIG. 1 , but may be used in the first and second nonmagnetic coupling layers 4 and 8 shown in FIG. 2 .

第二和第三磁性层可以由不同于CoCrZr基合金的材料制成,例如含有Co作为主要组分并具有hcp结构的Co合金。The second and third magnetic layers may be made of a material other than a CoCrZr-based alloy, such as a Co alloy containing Co as a main component and having a hcp structure.

具体是,第二和第三磁性层可以由选自CoCrTa基合金、CoCrPt基合金、CoCrPtTa基合金、CoCrPtB基合金、CoCrPtBTa基合金、CoCrPtBCu基合金、CoRuTa基合金、以及CoCrPtBM基合金(其中,M为Ta和Cu中的至少一种)中的一种或多种合金制成。Specifically, the second and third magnetic layers may be made of CoCrTa-based alloys, CoCrPt-based alloys, CoCrPtTa-based alloys, CoCrPtB-based alloys, CoCrPtBTa-based alloys, CoCrPtBCu-based alloys, CoRuTa-based alloys, and CoCrPtBM-based alloys (wherein, M It is made of one or more alloys of at least one of Ta and Cu).

在这些材料中,优选使用选自CoCrTa基合金、CoCrPtTa基合金、CoCrPtB基合金和CoCrPtBM基合金(其中,M为Ta和Cu中的至少一种)中的至少一种。Among these materials, at least one selected from CoCrTa-based alloys, CoCrPtTa-based alloys, CoCrPtB-based alloys, and CoCrPtBM-based alloys (where M is at least one of Ta and Cu) is preferably used.

当将CoCrPt基合金用于第二和第三磁性层时,从SNR方面考虑,Cr含量优选为在10~25原子%的范围中,而Pt含量优选为在8~16原子%的范围中。When a CoCrPt-based alloy is used for the second and third magnetic layers, the Cr content is preferably in the range of 10 to 25 at%, and the Pt content is preferably in the range of 8 to 16 at%, from the viewpoint of SNR.

当使用CoCrPtB基合金时,从SNR方面考虑,Cr含量优选为在10~25原子%的范围中,Pt含量优选为在8~16原子%的范围中,而B含量优选为在1~20原子%的范围中。When a CoCrPtB-based alloy is used, from the viewpoint of SNR, the Cr content is preferably in the range of 10 to 25 atomic %, the Pt content is preferably in the range of 8 to 16 atomic %, and the B content is preferably in the range of 1 to 20 atomic % % range.

当使用CoCrPtBTa基合金时,从SNR方面考虑,Cr含量优选为在10~25原子%的范围中,Pt含量优选为在8~16原子%的范围中,B含量优选为在1~20原子%的范围中,而Ta含量优选为在1~4原子%的范围中。When a CoCrPtBTa-based alloy is used, from the viewpoint of SNR, the Cr content is preferably in the range of 10 to 25 atomic %, the Pt content is preferably in the range of 8 to 16 atomic %, and the B content is preferably in the range of 1 to 20 atomic % In the range of , and the Ta content is preferably in the range of 1 to 4 atomic %.

当使用CoCrPtBCu基合金时,从SNR方面考虑,Cr含量优选为在10~25原子%的范围中,Pt含量优选为在8~16原子%的范围中,B含量优选为在1~20原子%的范围中,而Cu含量优选为在1~4原子%的范围中。When a CoCrPtBCu-based alloy is used, from the viewpoint of SNR, the Cr content is preferably in the range of 10 to 25 atomic %, the Pt content is preferably in the range of 8 to 16 atomic %, and the B content is preferably in the range of 1 to 20 atomic % , and the Cu content is preferably in the range of 1 to 4 atomic %.

在如图1所示的包括两个磁性层(即,第一磁性层3和第二磁性层5)的磁记录介质中,从热稳定性特征方面考虑,第二磁性层5的厚度优选为10nm或更大。从高记录密度方面考虑,第二磁性层5的厚度优选为40nm或更小。这是因为,如果该厚度超过40nm,就不能得到满意的记录和再现特征。In a magnetic recording medium including two magnetic layers (i.e., a first magnetic layer 3 and a second magnetic layer 5) as shown in FIG. 1, the second magnetic layer 5 preferably has a thickness of 10nm or larger. From the viewpoint of high recording density, the thickness of the second magnetic layer 5 is preferably 40 nm or less. This is because, if the thickness exceeds 40 nm, satisfactory recording and reproducing characteristics cannot be obtained.

在如图2所示的包括三个磁性层(即,第一至第三磁性层3、5和9)的磁记录介质中,为了改善第二磁性层5与第一磁性层3之间的反铁磁性耦合强度、以及第二磁性层5与第三磁性层9之间的反铁磁性耦合强度,第二磁性层5的厚度优选为2~15nm。In a magnetic recording medium including three magnetic layers (ie, first to third magnetic layers 3, 5, and 9) as shown in FIG. As for the antiferromagnetic coupling strength and the antiferromagnetic coupling strength between the second magnetic layer 5 and the third magnetic layer 9, the thickness of the second magnetic layer 5 is preferably 2-15 nm.

从热稳定性特征方面考虑,第三磁性层9的厚度优选为10nm或更大。从高记录密度方面考虑,第三磁性层9的厚度优选为40nm或更小。这是因为,如果该厚度超过40nm,就不能得到满意的记录和再现特征。From the viewpoint of thermal stability characteristics, the thickness of the third magnetic layer 9 is preferably 10 nm or more. From the viewpoint of high recording density, the thickness of the third magnetic layer 9 is preferably 40 nm or less. This is because, if the thickness exceeds 40 nm, satisfactory recording and reproducing characteristics cannot be obtained.

每一个磁性层(第一至第三磁性层3、5和9)可以具有包括多个层的多层结构。当磁性层具有多层结构时,可以将用于第一到第三磁性层的材料用于构成多层结构的层。Each magnetic layer (first to third magnetic layers 3, 5, and 9) may have a multilayer structure including a plurality of layers. When the magnetic layer has a multilayer structure, materials used for the first to third magnetic layers may be used for the layers constituting the multilayer structure.

在本发明中,为了促进非磁性底涂层2的外延生长,可以在非磁性衬底1和非磁性底涂层2之间形成由金属材料制成的取向调节层。In the present invention, in order to promote the epitaxial growth of the nonmagnetic undercoat layer 2, an orientation adjustment layer made of a metal material may be formed between the nonmagnetic substrate 1 and the nonmagnetic undercoat layer 2.

制成取向调节层的材料的实例包括CoW基合金、CoMo基合金、CoTa基合金、CoNb基合金、NiP基合金、NiTa基合金、FeMo基合金、FeW基合金、ReW基合金、ReMo基合金、RuW基合金和RuMo基合金。Examples of materials making the orientation adjustment layer include CoW-based alloys, CoMo-based alloys, CoTa-based alloys, CoNb-based alloys, NiP-based alloys, NiTa-based alloys, FeMo-based alloys, FeW-based alloys, ReW-based alloys, ReMo-based alloys, RuW-based alloys and RuMo-based alloys.

可以对取向调节层进行表面处理,其中允许表面与氧气和含氧的气体(例如空气)接触。从非磁性底涂层2的外延生长方面考虑,取向调节层的厚度优选为在5~50nm的范围中。The alignment adjustment layer may be subjected to a surface treatment in which the surface is allowed to come into contact with oxygen and oxygen-containing gas such as air. From the viewpoint of the epitaxial growth of the non-magnetic undercoat layer 2, the thickness of the orientation adjustment layer is preferably in the range of 5 to 50 nm.

图3示出了本发明的包括取向调节层的磁记录介质的一个实施例。磁记录介质在非磁性衬底1和非磁性底涂层2之间包括取向调节层10。FIG. 3 shows an embodiment of a magnetic recording medium including an orientation adjustment layer of the present invention. The magnetic recording medium includes an orientation adjustment layer 10 between a nonmagnetic substrate 1 and a nonmagnetic undercoat layer 2 .

另外,为了改善非磁性衬底1和取向调节层10之间的粘附力,可以在非磁性衬底1和取向调节层10之间形成粘合层。In addition, in order to improve the adhesive force between the nonmagnetic substrate 1 and the orientation adjustment layer 10 , an adhesive layer may be formed between the nonmagnetic substrate 1 and the orientation adjustment layer 10 .

粘合层可以由Cr、Ta、Ti和W中的至少一种制成。从粘附力和产率方面考虑,粘合层的厚度优选为在1~100nm的范围中(更优选为在5~80nm的范围中,最优选为在7~70nm的范围中)。The adhesive layer may be made of at least one of Cr, Ta, Ti, and W. The thickness of the adhesive layer is preferably in the range of 1 to 100 nm (more preferably in the range of 5 to 80 nm, most preferably in the range of 7 to 70 nm) from the viewpoint of adhesion and productivity.

图4示出了本发明的包括粘合层的磁记录介质的另一实施例。磁记录介质在非磁性衬底1和取向调节层10之间包括粘合层11。FIG. 4 shows another embodiment of a magnetic recording medium including an adhesive layer of the present invention. The magnetic recording medium includes an adhesive layer 11 between the nonmagnetic substrate 1 and the orientation adjustment layer 10 .

为了改善第一磁性层3的外延生长,可以在非磁性底涂层2和第一磁性层3之间形成非磁性中间层。当形成非磁性中间层时,可以获得改善磁特征(例如矫顽力)和记录-再现特征(例如SNR)的效果。In order to improve the epitaxial growth of the first magnetic layer 3 , a nonmagnetic intermediate layer may be formed between the nonmagnetic undercoat layer 2 and the first magnetic layer 3 . When the nonmagnetic interlayer is formed, the effect of improving magnetic characteristics (such as coercive force) and recording-reproduction characteristics (such as SNR) can be obtained.

非磁性中间层可以由Co和Cr制成。当非磁性中间层由CoCr基合金制成时,从提高SNR方面考虑,Cr含量优选为在25~45原子%的范围中。从提高SNR方面考虑,非磁性中间层的厚度优选为在0.5~3nm的范围中。The non-magnetic intermediate layer can be made of Co and Cr. When the nonmagnetic intermediate layer is made of a CoCr-based alloy, the Cr content is preferably in the range of 25 to 45 atomic % from the viewpoint of improving SNR. From the viewpoint of improving SNR, the thickness of the nonmagnetic intermediate layer is preferably in the range of 0.5 to 3 nm.

图5示出了本发明的包括非磁性中间层的磁记录介质的又一实施例。磁记录介质在非磁性底涂层2和第一磁性层3之间包括非磁性中间层12。Fig. 5 shows yet another embodiment of the magnetic recording medium including the non-magnetic interlayer of the present invention. The magnetic recording medium includes a nonmagnetic intermediate layer 12 between the nonmagnetic undercoat layer 2 and the first magnetic layer 3 .

保护层6可以由公知作为保护层的材料制成,例如碳和SiC。The protective layer 6 can be made of a material known as a protective layer, such as carbon and SiC.

从在提高记录密度时的空号损耗、以及介质的耐久性方面考虑,保护层6的厚度优选为在1~10nm的范围中。The thickness of the protective layer 6 is preferably in the range of 1 to 10 nm from the viewpoint of space loss when increasing the recording density and the durability of the medium.

在保护层6上,可以根据需要形成由含氟润滑剂(例如全氟聚醚)制成的润滑层7。On the protective layer 6, a lubricating layer 7 made of a fluorine-containing lubricant such as perfluoropolyether may be formed as necessary.

本发明的记录介质是AFC介质,其中,可以将被提供在非磁性耦合层上方和下方的多个磁性层的磁化方向调节为彼此相反并平行。The recording medium of the present invention is an AFC medium in which the magnetization directions of the plurality of magnetic layers provided above and below the nonmagnetic coupling layer can be adjusted to be opposite and parallel to each other.

换句话说,在本发明的磁记录介质中,第二磁性层5可以与第一磁性层3反铁磁性耦合。此外,第三磁性层9可以与第二磁性层5反铁磁性耦合,而第二磁性层5可以与第一磁性层3反铁磁性耦合。In other words, in the magnetic recording medium of the present invention, the second magnetic layer 5 can be antiferromagnetically coupled with the first magnetic layer 3 . Furthermore, the third magnetic layer 9 may be antiferromagnetically coupled with the second magnetic layer 5 , and the second magnetic layer 5 may be antiferromagnetically coupled with the first magnetic layer 3 .

可以使用Hex(交换耦合强度)或J(交换连接系数)作为表示反铁磁性耦合强度的指数。Hex (exchange coupling strength) or J (exchange linkage coefficient) can be used as an index representing the antiferromagnetic coupling strength.

Hex优选为500(Oe)或更大,J优选为0.2尔格/cm2或更大。Hex is preferably 500 (Oe) or more, and J is preferably 0.2 erg/cm 2 or more.

并且,1尔格/cm2=0.001J/m2,1Oe≈79.577475A/m,以及1emu/cc≈12.5664×10-4Wb/m2And, 1 erg/cm 2 =0.001 J/m 2 , 1 Oe≈79.577475 A/m, and 1 emu/cc≈12.5664×10 −4 Wb/m 2 .

将Hex定义为,当测量矫顽磁场强度并形成局部磁滞回线时,从局部磁滞回线中心到0的磁场强度。Hex is defined as the magnetic field strength from the center of the local hysteresis loop to 0 when the coercive magnetic field strength is measured and a local hysteresis loop is formed.

Hex越大,磁性层之间(被提供在非磁性耦合层的上方和下方)的磁耦合越强,并且它们越稳定。The larger Hex is, the stronger the magnetic coupling between the magnetic layers (provided above and below the non-magnetic coupling layer) is, and the more stable they are.

图6示出了局部磁滞回线的一个实例。参考图6,对用于形成局部磁滞回线的一种方法进行了说明。Figure 6 shows an example of a local hysteresis loop. Referring to FIG. 6, one method for forming local hysteresis loops is described.

首先,使磁场强度从0(Oe)增大到最大测量磁场强度(例如,10,000(Oe))(图6,步骤1→2→3)。First, increase the magnetic field strength from 0 (Oe) to the maximum measured magnetic field strength (for example, 10,000 (Oe)) (FIG. 6, step 1→2→3).

随后,使磁场反转,然后允许磁场强度从最大测量数值(例如,10,000(Oe))开始减小。磁场强度逐渐减小,并且然后磁场强度突然下降,从而磁化线形成曲线。之后,进一步使磁场强度下降到某一数值(例如,-3,000(Oe)),该数值比磁场强度再次突然开始下降处的磁场强度大1,000(Oe)(图6,步骤4→5→6)。随后,磁场再次反转,使磁场强度从在磁场发生反转处的某一数值(例如,-3,000(Oe))增大到最大测量数值(例如,10,000(Oe))(图6,步骤7→1→2→3)。通过这些步骤得到的磁滞曲线就是局部磁滞回线。Subsequently, the magnetic field is reversed, and then the magnetic field strength is allowed to decrease from the maximum measured value (eg, 10,000 (Oe)). The magnetic field strength gradually decreases, and then the magnetic field strength drops suddenly, so that the magnetization lines form a curve. After that, the magnetic field strength is further decreased to a value (for example, -3,000(Oe)) that is 1,000(Oe) greater than the magnetic field strength at which the magnetic field strength suddenly starts to decrease again (Figure 6, step 4→5→6) . Subsequently, the magnetic field is reversed again, increasing the field strength from a value at which the field reversal occurs (e.g., -3,000(Oe)) to a maximum measured value (e.g., 10,000(Oe)) (Figure 6, step 7 →1→2→3). The hysteresis curve obtained through these steps is the local hysteresis loop.

J通过下列公式计算:J is calculated by the following formula:

J=Hex×Ms1×t1 J=Hex×Ms 1 ×t 1

其中,Ms1表示第一磁性层3的饱和磁化强度(emu/cc),t1表示第一磁性层3的厚度。Ms1可以通过局部磁滞回线获得。Wherein, Ms 1 represents the saturation magnetization (emu/cc) of the first magnetic layer 3 , and t 1 represents the thickness of the first magnetic layer 3 . Ms 1 can be obtained by local hysteresis loops.

下面,将描述用于制造本发明磁记录介质的方法的一个实例。Next, an example of a method for manufacturing the magnetic recording medium of the present invention will be described.

如果必要,对非磁性衬底1的表面进行纹理化工艺。对于纹理化工艺,可以采用利用研磨带的机械纹理化。A texturing process is performed on the surface of the non-magnetic substrate 1, if necessary. For the texturing process, mechanical texturing with abrasive belts may be employed.

纹理化工艺可以与振荡同时进行。“振荡”处理指的是,当研磨带在非磁性衬底1上以圆周方向移动时,使研磨带在非磁性衬底1的径向上振荡的操作。振荡速度优选为60~1,200周期/分,从而非磁性衬底1的表面得到均匀抛光。The texturing process can be performed simultaneously with the shaking. The "oscillating" process refers to an operation of oscillating the abrasive tape in the radial direction of the nonmagnetic substrate 1 while the abrasive tape moves in the circumferential direction on the nonmagnetic substrate 1 . The oscillation speed is preferably 60 to 1,200 cycles/minute so that the surface of the non-magnetic substrate 1 is uniformly polished.

除利用研磨带的机械纹理化工艺以外,还可以采用利用固定磨料的纹理化方法、利用固定研磨轮的纹理化方法、激光处理等。In addition to the mechanical texturing process using an abrasive belt, a texturing method using a fixed abrasive, a texturing method using a fixed grinding wheel, laser treatment, and the like may be employed.

优选这样进行纹理化工艺,使得在非磁性衬底1的表面上形成线密度为7500线/毫米或更高的槽。The texturing process is preferably performed such that grooves having a line density of 7500 lines/mm or higher are formed on the surface of the non-magnetic substrate 1 .

当完成冲洗非磁性衬底1后,将非磁性衬底1放置在膜形成装置的室内。根据需要将非磁性衬底1加热到100~400℃。When the rinsing of the non-magnetic substrate 1 is completed, the non-magnetic substrate 1 is placed in the chamber of the film forming apparatus. The nonmagnetic substrate 1 is heated to 100 to 400° C. as necessary.

通过溅射(例如,DC或RF磁控管溅射),在非磁性衬底1上形成非磁性底涂层2、第一磁性层3、非磁性耦合层4、第二磁性层5(或非磁性底涂层2、第一磁性层3、第一非磁性耦合层4、第二磁性层5、第二非磁性耦合层8和第三磁性层9)。By sputtering (for example, DC or RF magnetron sputtering), on the non-magnetic substrate 1, a non-magnetic primer layer 2, a first magnetic layer 3, a non-magnetic coupling layer 4, a second magnetic layer 5 (or non-magnetic undercoat layer 2, first magnetic layer 3, first non-magnetic coupling layer 4, second magnetic layer 5, second non-magnetic coupling layer 8 and third magnetic layer 9).

可以采用下列溅射操作条件以形成这些层。The following sputtering operating conditions can be employed to form these layers.

将非磁性衬底1放置在室内,对该室抽真空,使真空度在1×10-4~1×10-7Pa的范围中。向室内注入溅射气体(例如Ar),并进行放电。供给的电功率优选为0.2~2.0kW。通过控制放电时间和供给的电功率,可以调节形成的膜的厚度。The non-magnetic substrate 1 is placed in a chamber, and the chamber is evacuated so that the degree of vacuum is in the range of 1×10 -4 to 1×10 -7 Pa. A sputtering gas (such as Ar) is injected into the chamber, and discharge is performed. The electric power to be supplied is preferably 0.2 to 2.0 kW. By controlling the discharge time and the electric power supplied, the thickness of the formed film can be adjusted.

具体是,可以例如通过下列工艺制造本发明的磁记录介质。Specifically, the magnetic recording medium of the present invention can be produced, for example, by the following process.

在非磁性衬底1上,采用溅射靶(例如Cr、Cr合金、NiAl基合金或RuAl基合金)形成厚度为3~15nm的非磁性底涂层2。On the non-magnetic substrate 1, a non-magnetic undercoat layer 2 with a thickness of 3-15 nm is formed by using a sputtering target (such as Cr, Cr alloy, NiAl-based alloy or RuAl-based alloy).

然后,采用CoCrZr基合金形成厚度为0.5~5nm的第一磁性层3。Then, the first magnetic layer 3 is formed with a thickness of 0.5 to 5 nm using a CoCrZr-based alloy.

随后,采用溅射靶(例如Ru、Rh、Ir、Cr、Re、Ru基合金、Rh基合金、Ir基合金、Cr基合金或Re基合金)形成厚度为0.5~1.5nm(更优选为0.6~1.0nm)的非磁性耦合层4。Subsequently, a sputtering target (such as Ru, Rh, Ir, Cr, Re, Ru-based alloy, Rh-based alloy, Ir-based alloy, Cr-based alloy or Re-based alloy) is used to form a thickness of 0.5 to 1.5 nm (more preferably 0.6 nm). ~1.0nm) non-magnetic coupling layer 4.

随后,采用溅射靶(例如CoCrTa基合金、CoCrPt基合金、CoCrPtTa基合金、CoCrPtB基合金、CoCrPtBTa基合金、CoCrPtBCu基合金或CoRuTa基合金)形成厚度为10~40nm的第二磁性层5。Subsequently, a second magnetic layer 5 with a thickness of 10 to 40 nm is formed using a sputtering target (such as a CoCrTa-based alloy, a CoCrPt-based alloy, a CoCrPtTa-based alloy, a CoCrPtB-based alloy, a CoCrPtBTa-based alloy, a CoCrPtBCu-based alloy, or a CoRuTa-based alloy).

之后,通过常规公知的方法(例如溅射、等离子体CVD)制造保护层6。Thereafter, protective layer 6 is produced by conventionally known methods (eg, sputtering, plasma CVD).

在保护层6上,如果必要,可以通过常规公知的方法(例如旋涂或浸渍)形成润滑层7。On the protective layer 6, if necessary, a lubricating layer 7 can be formed by a conventionally known method such as spin coating or dipping.

当在制造非磁性底涂层2之前,在非磁性衬底1与非磁性底涂层2之间形成取向调节层10时,利用选自于构成取向调节层10的材料的溅射靶形成取向调节层10。When the orientation adjustment layer 10 is formed between the nonmagnetic substrate 1 and the nonmagnetic undercoat layer 2 before the nonmagnetic undercoat layer 2 is manufactured, the orientation is formed using a sputtering target selected from materials constituting the orientation adjustment layer 10. Conditioning layer 10.

当在制造取向调节层10之前,在非磁性衬底1与取向调节层10之间形成粘合层11时,可以使用选自于构成粘合层11的材料的溅射靶形成粘合层11。When forming the adhesive layer 11 between the nonmagnetic substrate 1 and the orientation adjusting layer 10 before manufacturing the orientation adjusting layer 10, the adhesive layer 11 may be formed using a sputtering target selected from materials constituting the adhesive layer 11 .

由于磁记录介质包括由CoCrZr基合金制成的第一磁性层,从而可以减少介质噪声。Since the magnetic recording medium includes the first magnetic layer made of a CoCrZr-based alloy, medium noise can be reduced.

该磁记录介质具有这样的特征,其中CoCrZr基合金只用作第一磁性层,所述第一磁性层在多个磁性层中是位置最接近非磁性衬底的层。This magnetic recording medium has a feature in which the CoCrZr-based alloy is used only as the first magnetic layer which is the layer positioned closest to the non-magnetic substrate among the plurality of magnetic layers.

例如,在如图1所示的磁记录介质中,在两个磁性层,即第一磁性层3和第二磁性层5中,只有第一磁性层3由CoCrZr基合金制成。在如图2所示的磁记录介质中,在三个磁性层,即第一磁性层3、第二磁性层5和第三磁性层9中,只有第一磁性层3由CoCrZr基合金制成。For example, in the magnetic recording medium shown in FIG. 1, of the two magnetic layers, namely, the first magnetic layer 3 and the second magnetic layer 5, only the first magnetic layer 3 is made of a CoCrZr-based alloy. In the magnetic recording medium shown in FIG. 2, among the three magnetic layers, namely, the first magnetic layer 3, the second magnetic layer 5, and the third magnetic layer 9, only the first magnetic layer 3 is made of a CoCrZr-based alloy .

因此,在本发明的磁记录介质中可以减少介质噪声。相反,在包括除第一磁性层以外的由CoCrZr基合金制成的磁性层的磁记录介质中,介质噪声增大。Therefore, medium noise can be reduced in the magnetic recording medium of the present invention. In contrast, in a magnetic recording medium including a magnetic layer made of a CoCrZr-based alloy other than the first magnetic layer, medium noise increases.

由于该磁记录介质是AFC介质,其中磁性层反铁磁性耦合,因此热稳定性得到改善。Since the magnetic recording medium is an AFC medium in which the magnetic layers are antiferromagnetically coupled, thermal stability is improved.

图7示出了根据本发明的示例磁记录和再现装置。FIG. 7 shows an example magnetic recording and reproducing apparatus according to the present invention.

如图7所示的磁记录和再现装置包括磁记录介质20、用于使磁记录介质20旋转的介质驱动部件21、用于在磁记录介质20上记录信息和从其再现信息的磁头22、用于相对于磁记录介质20移动磁头22的磁头驱动部件23、以及记录再现信号处理系统24。The magnetic recording and reproducing apparatus shown in FIG. 7 includes a magnetic recording medium 20, a medium driving part 21 for rotating the magnetic recording medium 20, a magnetic head 22 for recording and reproducing information on the magnetic recording medium 20, A magnetic head driving section 23 for moving the magnetic head 22 relative to the magnetic recording medium 20 , and a recording and reproduction signal processing system 24 .

记录再现信号处理系统24这样配置,从而对来自外部的数据进行处理以向磁头22传送记录信号,以及对来自磁头22的再现信号进行处理以向外部传输数据。The recording reproduction signal processing system 24 is configured so as to process data from the outside to transmit recording signals to the magnetic head 22 and to process reproduction signals from the magnetic head 22 to transmit data to the outside.

对于磁头22,可以采用适合于用作高记录密度的磁头,例如这样的磁头,其不仅包括基于各向异性磁阻效应(AMR)的磁阻元件(MR)作为再现元件,还包括基于巨磁阻效应(GMR)的巨磁阻元件(GMR)作为再现元件。记录密度可以通过采用GMR元件来提高。For the magnetic head 22, a magnetic head suitable for high recording density can be used, for example, a magnetic head including not only a magnetoresistive element (MR) based on the anisotropic magnetoresistance effect (AMR) as a reproducing element but also a giant magnetic A giant magnetoresistive element (GMR) of the resistive effect (GMR) is used as a reproducing element. Recording density can be improved by using GMR elements.

由于磁记录和再现装置采用包括由CoCrZr基合金制成第一磁性层的磁记录介质,从而可以减少介质噪声。Since the magnetic recording and reproducing apparatus employs a magnetic recording medium including a first magnetic layer made of a CoCrZr-based alloy, medium noise can be reduced.

实例example

下面,将参考实例说明本发明的效果。Next, the effects of the present invention will be explained with reference to examples.

实例1Example 1

在由Al制成的衬底(外径:95mm,内径:25mm,以及厚度:1.270mm)的表面上,通过化学镀形成一层NiP膜(厚度:12μm)。随后,对NiP膜表面进行纹理化工艺,制备出表面平均粗糙度(Ra)为0.5nm的非磁性衬底。On the surface of a substrate made of Al (outer diameter: 95 mm, inner diameter: 25 mm, and thickness: 1.270 mm), a NiP film (thickness: 12 μm) was formed by electroless plating. Subsequently, the surface of the NiP film is textured to prepare a non-magnetic substrate with an average surface roughness (Ra) of 0.5 nm.

将制备的非磁性衬底放置在直流磁控管溅射装置(C3010,日本ANELVA的产品)中,将腔内抽真空到2×10-7托(2.7×10-5Pa),随后,将非磁性衬底加热到250℃。The prepared non-magnetic substrate was placed in a DC magnetron sputtering device (C3010, a product of ANELVA, Japan), and the chamber was evacuated to 2× 10-7 Torr (2.7× 10-5 Pa), and subsequently, the The non-magnetic substrate is heated to 250°C.

在非磁性衬底上形成非磁性底涂层。非磁性底涂层具有多层结构,包括由Cr制成的第一层(厚度:5nm)和由CrMo合金(Cr:80原子%和Mo:20原子%)制成的第二层(厚度:3nm),其中将第二层形成在第一层上。A non-magnetic undercoat layer is formed on a non-magnetic substrate. The nonmagnetic undercoat layer has a multilayer structure including a first layer made of Cr (thickness: 5 nm) and a second layer made of CrMo alloy (Cr: 80 atomic % and Mo: 20 atomic %) (thickness: 3nm), wherein the second layer is formed on the first layer.

在非磁性底涂层的第二层上形成由CoCrZr合金(Co:75原子%,Cr:20原子%,以及Zr:5原子%)制成的第一磁性层(厚度:2nm)。A first magnetic layer (thickness: 2 nm) made of a CoCrZr alloy (Co: 75 atomic %, Cr: 20 atomic %, and Zr: 5 atomic %) was formed on the second layer of the nonmagnetic undercoat layer.

在第一磁性层上形成由Ru制成的非磁性耦合层(厚度:0.8nm)。A non-magnetic coupling layer (thickness: 0.8 nm) made of Ru was formed on the first magnetic layer.

在非磁性耦合层上形成由CoCrPtB合金(Co:60原子%,Cr:22原子%,Pt:12原子%,以及B:6原子%)制成的第二磁性层(厚度:20nm)。A second magnetic layer (thickness: 20 nm) made of a CoCrPtB alloy (Co: 60 atomic%, Cr: 22 atomic%, Pt: 12 atomic%, and B: 6 atomic%) was formed on the nonmagnetic coupling layer.

之后,在第二磁性层上形成由碳制成的保护层(厚度:5nm)。After that, a protective layer (thickness: 5 nm) made of carbon was formed on the second magnetic layer.

在形成每一层时,使用Ar作为溅射气体,并将其气压调节到3毫托。In forming each layer, Ar was used as a sputtering gas, and its gas pressure was adjusted to 3 mTorr.

随后,将含有全氟聚醚的润滑剂施加到保护层的表面,以形成润滑剂层(厚度:2nm),从而制备磁记录介质。Subsequently, a lubricant containing perfluoropolyether was applied to the surface of the protective layer to form a lubricant layer (thickness: 2 nm), thereby preparing a magnetic recording medium.

实例2Example 2

以与实例1相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:81原子%,Cr:14原子%,以及Zr:5原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 1 except that the first magnetic layer was made of a CoCrZr alloy (Co: 81 at%, Cr: 14 at%, and Zr: 5 at%).

实例3Example 3

以与实例1相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:79原子%,Cr:16原子%,以及Zr:5原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 1 except that the first magnetic layer was made of a CoCrZr alloy (Co: 79 at%, Cr: 16 at%, and Zr: 5 at%).

实例4Example 4

以与实例1相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:77原子%,Cr:18原子%,以及Zr:5原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 1 except that the first magnetic layer was made of a CoCrZr alloy (Co: 77 at%, Cr: 18 at%, and Zr: 5 at%).

实例5Example 5

以与实例1相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:73原子%,Cr:22原子%,以及Zr:5原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 1 except that the first magnetic layer was made of a CoCrZr alloy (Co: 73 at%, Cr: 22 at%, and Zr: 5 at%).

实例6Example 6

以与实例1相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:71原子%,Cr:24原子%,以及Zr:5原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 1 except that the first magnetic layer was made of a CoCrZr alloy (Co: 71 at%, Cr: 24 at%, and Zr: 5 at%).

实例7Example 7

以与实例1相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:79原子%,Cr:20原子%,以及Zr:1原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 1 except that the first magnetic layer was made of a CoCrZr alloy (Co: 79 at%, Cr: 20 at%, and Zr: 1 at%).

实例8Example 8

以与实例1相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:77原子%,Cr:20原子%,以及Zr:3原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 1, except that the first magnetic layer was made of a CoCrZr alloy (Co: 77 atomic%, Cr: 20 atomic%, and Zr: 3 atomic%).

实例9Example 9

以与实例1相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:73原子%,Cr:20原子%,以及Zr:7原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 1 except that the first magnetic layer was made of a CoCrZr alloy (Co: 73 at%, Cr: 20 at%, and Zr: 7 at%).

实例10Example 10

以与实例1相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:71原子%,Cr:20原子%,以及Zr:9原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 1 except that the first magnetic layer was made of a CoCrZr alloy (Co: 71 at%, Cr: 20 at%, and Zr: 9 at%).

实例11Example 11

以与实例1相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:69原子%,Cr:20原子%,以及Zr:11原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 1 except that the first magnetic layer was made of a CoCrZr alloy (Co: 69 at%, Cr: 20 at%, and Zr: 11 at%).

实例12Example 12

以与实例1相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZrB合金(Co:73原子%,Cr:20原子%,Zr:5原子%,以及B:2原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 1, except that the first magnetic layer was made of a CoCrZrB alloy (Co: 73 at%, Cr: 20 at%, Zr: 5 at%, and B: 2 at%) .

对比实例1Comparative example 1

以与实例1相同的方式制备对比磁记录介质,区别在于,第一磁性层由CoCr合金(Co:80原子%以及Cr:20原子%)制成。A comparative magnetic recording medium was prepared in the same manner as in Example 1 except that the first magnetic layer was made of a CoCr alloy (Co: 80 atomic % and Cr: 20 atomic %).

对比实例2Comparative example 2

以与实例1相同的方式制备对比磁记录介质,区别在于,第一磁性层由CoCrTa合金(Co:75原子%,Cr:20原子%,以及Ta:5原子%)制成。A comparative magnetic recording medium was prepared in the same manner as in Example 1 except that the first magnetic layer was made of a CoCrTa alloy (Co: 75 at%, Cr: 20 at%, and Ta: 5 at%).

对比实例3Comparative example 3

以与实例1相同的方式制备对比磁记录介质,区别在于,第二磁性层由CoCrZr合金(Co:75原子%,Cr:20原子%,以及Zr:5原子%)制成。A comparative magnetic recording medium was prepared in the same manner as in Example 1 except that the second magnetic layer was made of a CoCrZr alloy (Co: 75 at%, Cr: 20 at%, and Zr: 5 at%).

实例13Example 13

通过对玻璃衬底(外径:65mm,内径:20mm,以及厚度:0.635mm)进行纹理化工艺,制备出表面平均粗糙度(Ra)为0.3nm的非磁性衬底。A non-magnetic substrate having a surface average roughness (Ra) of 0.3 nm was prepared by subjecting a glass substrate (outer diameter: 65 mm, inner diameter: 20 mm, and thickness: 0.635 mm) to a texturing process.

将制备的非磁性衬底放置在直流磁控管溅射装置(C3010,日本ANELVA的产品)中,将腔内抽真空到2×10-7托(2.7×10-5Pa)。The prepared non-magnetic substrate was placed in a DC magnetron sputtering device (C3010, product of ANELVA, Japan), and the chamber was evacuated to 2×10 -7 Torr (2.7×10 -5 Pa).

在非磁性衬底上,形成由CoW合金(Co:50原子%和W:50原子%)制成的取向调节层(厚度:5nm),随后将其加热到250℃。On the nonmagnetic substrate, an orientation adjustment layer (thickness: 5 nm) made of a CoW alloy (Co: 50 atomic % and W: 50 atomic %) was formed, followed by heating to 250°C.

之后,将取向调节层的表面暴露在氧气中。将氧气压和暴露时间分别控制为0.05Pa和5秒。After that, the surface of the alignment adjusting layer was exposed to oxygen. The oxygen pressure and exposure time were controlled to be 0.05 Pa and 5 seconds, respectively.

在取向调节层上形成由CrTiB合金(Cr:82原子%,Ti:16原子%,以及B:2原子%)制成的非磁性底涂层A non-magnetic undercoat layer made of CrTiB alloy (Cr: 82 at%, Ti: 16 at%, and B: 2 at%) is formed on the orientation adjustment layer

在非磁性底涂层上形成由CoCrZr合金(Co:81原子%,Cr:14原子%,以及Zr:5原子%)制成的第一磁性层(厚度:2nm)。A first magnetic layer (thickness: 2 nm) made of a CoCrZr alloy (Co: 81 atomic %, Cr: 14 atomic %, and Zr: 5 atomic %) was formed on the nonmagnetic undercoat layer.

在第一磁性层上形成由Ru制成的非磁性耦合层(厚度:0.8nm)。A non-magnetic coupling layer (thickness: 0.8 nm) made of Ru was formed on the first magnetic layer.

在非磁性耦合层上形成由CoCrPtB合金(Co:60原子%,Cr:22原子%,Pt:12原子%,以及B:6原子%)制成的第二磁性层(厚度:20nm)。A second magnetic layer (thickness: 20 nm) made of a CoCrPtB alloy (Co: 60 atomic%, Cr: 22 atomic%, Pt: 12 atomic%, and B: 6 atomic%) was formed on the nonmagnetic coupling layer.

之后,形成由碳制成的保护层(厚度:5nm)。After that, a protective layer (thickness: 5 nm) made of carbon was formed.

在形成每一层时,使用Ar作为溅射气体,并将其气压调节到3毫托。In forming each layer, Ar was used as a sputtering gas, and its gas pressure was adjusted to 3 mTorr.

随后,将含有全氟聚醚的润滑剂施加到保护层的表面,以形成润滑剂层(厚度:2nm),从而制备出磁记录介质。Subsequently, a lubricant containing perfluoropolyether was applied to the surface of the protective layer to form a lubricant layer (thickness: 2 nm), thereby preparing a magnetic recording medium.

实例14Example 14

以与实例13相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:87原子%,Cr:8原子%,以及Zr:5原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 13 except that the first magnetic layer was made of a CoCrZr alloy (Co: 87 at%, Cr: 8 at%, and Zr: 5 at%).

实例15Example 15

以与实例13相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:85原子%,Cr:10原子%,以及Zr:5原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 13 except that the first magnetic layer was made of a CoCrZr alloy (Co: 85 at%, Cr: 10 at%, and Zr: 5 at%).

实例16Example 16

以与实例13相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:83原子%,Cr:12原子%,以及Zr:5原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 13 except that the first magnetic layer was made of a CoCrZr alloy (Co: 83 at%, Cr: 12 at%, and Zr: 5 at%).

实例17Example 17

以与实例13相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:79原子%,Cr:16原子%,以及Zr:5原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 13 except that the first magnetic layer was made of a CoCrZr alloy (Co: 79 at%, Cr: 16 at%, and Zr: 5 at%).

实例18Example 18

以与实例13相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:77原子%,Cr:18原子%,以及Zr:5原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 13 except that the first magnetic layer was made of a CoCrZr alloy (Co: 77 at%, Cr: 18 at%, and Zr: 5 at%).

实例19Example 19

以与实例13相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:85原子%,Cr:14原子%,以及Zr:1原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 13, except that the first magnetic layer was made of a CoCrZr alloy (Co: 85 atomic%, Cr: 14 atomic%, and Zr: 1 atomic%).

实例20Example 20

以与实例13相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:83原子%,Cr:14原子%,以及Zr:3原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 13 except that the first magnetic layer was made of a CoCrZr alloy (Co: 83 at%, Cr: 14 at%, and Zr: 3 at%).

实例21Example 21

以与实例13相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:79原子%,Cr:14原子%,以及Zr:7原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 13 except that the first magnetic layer was made of a CoCrZr alloy (Co: 79 at%, Cr: 14 at%, and Zr: 7 at%).

实例22Example 22

以与实例13相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:77原子%,Cr:14原子%,以及Zr:9原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 13 except that the first magnetic layer was made of a CoCrZr alloy (Co: 77 at%, Cr: 14 at%, and Zr: 9 at%).

实例23Example 23

以与实例13相同的方式制备磁记录介质,区别在于,第一磁性层由CoCrZr合金(Co:75原子%,Cr:14原子%,以及Zr:11原子%)制成。A magnetic recording medium was prepared in the same manner as in Example 13, except that the first magnetic layer was made of a CoCrZr alloy (Co: 75 atomic %, Cr: 14 atomic %, and Zr: 11 atomic %).

对比实例4Comparative example 4

以与实例13相同的方式制备对比磁记录介质,区别在于,第一磁性层由CoCr合金(Co:86原子%和Cr:14原子%)制成。A comparative magnetic recording medium was prepared in the same manner as in Example 13 except that the first magnetic layer was made of a CoCr alloy (Co: 86 atomic % and Cr: 14 atomic %).

对比实例5Comparative example 5

以与实例13相同的方式制备对比磁记录介质,区别在于,第一磁性层由CoCrTa合金(Co:81原子%,Cr:14原子%,以及Ta:5原子%)制成。A comparative magnetic recording medium was prepared in the same manner as in Example 13 except that the first magnetic layer was made of a CoCrTa alloy (Co: 81 at%, Cr: 14 at%, and Ta: 5 at%).

实例24Example 24

在由Al制成的衬底(外径:95mm,内径:25mm,以及厚度:1.270mm)的表面上,通过化学镀形成一层NiP膜(厚度:12μm)。随后,对NiP基合金膜的表面进行纹理化工艺,制备出表面平均粗糙度(Ra)为0.5nm的非磁性衬底。On the surface of a substrate made of Al (outer diameter: 95 mm, inner diameter: 25 mm, and thickness: 1.270 mm), a NiP film (thickness: 12 μm) was formed by electroless plating. Subsequently, the surface of the NiP-based alloy film is textured to prepare a non-magnetic substrate with an average surface roughness (Ra) of 0.5 nm.

将制备的非磁性衬底放置在直流磁控管溅射装置(C3010,日本ANELVA的产品)中,将腔内抽真空到2×10-7托(2.7×10-5Pa),随后,将非磁性衬底加热到250℃。The prepared non-magnetic substrate was placed in a DC magnetron sputtering device (C3010, a product of ANELVA, Japan), and the chamber was evacuated to 2× 10-7 Torr (2.7× 10-5 Pa), and subsequently, the The non-magnetic substrate is heated to 250°C.

在非磁性衬底上形成非磁性底涂层。非磁性底涂层具有多层结构,包括由Cr制成的第一层(厚度:5nm)和由CrMo合金(Cr:80原子%和Mo:20原子%)制成的第二层(厚度:3nm),其中在第一层之上形成第二层。A non-magnetic undercoat layer is formed on a non-magnetic substrate. The nonmagnetic undercoat layer has a multilayer structure including a first layer made of Cr (thickness: 5 nm) and a second layer made of CrMo alloy (Cr: 80 atomic % and Mo: 20 atomic %) (thickness: 3nm), wherein a second layer is formed over the first layer.

在非磁性底涂层的第二层上形成由CoCrZr合金(Co:75原子%,Cr:20原子%,以及Zr:5原子%)制成的第一磁性层(厚度:2nm)。A first magnetic layer (thickness: 2 nm) made of a CoCrZr alloy (Co: 75 atomic %, Cr: 20 atomic %, and Zr: 5 atomic %) was formed on the second layer of the nonmagnetic undercoat layer.

在第一磁性层上形成由Ru制成的第一非磁性耦合层(厚度:0.8nm)。A first non-magnetic coupling layer (thickness: 0.8 nm) made of Ru was formed on the first magnetic layer.

在第一非磁性耦合层上形成由CoCrPtB合金(Co:69原子%,Cr:22原子%,Pt:5原子%,以及B:4原子%)制成的第二磁性层(厚度:4nm)。A second magnetic layer (thickness: 4 nm) made of a CoCrPtB alloy (Co: 69 atomic %, Cr: 22 atomic %, Pt: 5 atomic %, and B: 4 atomic %) was formed on the first nonmagnetic coupling layer .

在第二磁性层上形成由Ru制成的第二非磁性耦合层(厚度:0.8nm)。A second nonmagnetic coupling layer (thickness: 0.8 nm) made of Ru was formed on the second magnetic layer.

在第二非磁性耦合层上形成由CoCrPtB合金(Co:60原子%,Cr:22原子%,Pt:12原子%,以及B:6原子%)制成的第三磁性层(厚度:15nm)。A third magnetic layer (thickness: 15 nm) made of a CoCrPtB alloy (Co: 60 atomic %, Cr: 22 atomic %, Pt: 12 atomic %, and B: 6 atomic %) was formed on the second nonmagnetic coupling layer .

之后,形成由碳制成的保护层(厚度:5nm)。After that, a protective layer (thickness: 5 nm) made of carbon was formed.

在形成每一层时,使用Ar作为溅射气体,并将其气压调节到3毫托。In forming each layer, Ar was used as a sputtering gas, and its gas pressure was adjusted to 3 mTorr.

随后,将含有全氟聚醚的润滑剂施加到保护层的表面,以形成润滑剂层(厚度:2nm),从而制备出磁记录介质。Subsequently, a lubricant containing perfluoropolyether was applied to the surface of the protective layer to form a lubricant layer (thickness: 2 nm), thereby preparing a magnetic recording medium.

对比实例6Comparative example 6

以与实例24相同的方式制备对比磁记录介质,区别在于,第一磁性层由CoCr合金(Co:80原子%和Cr:20原子%)制成。A comparative magnetic recording medium was prepared in the same manner as in Example 24, except that the first magnetic layer was made of a CoCr alloy (Co: 80 atomic % and Cr: 20 atomic %).

对比实例7Comparative example 7

以与实例24相同的方式制备对比磁记录介质,区别在于,第一磁性层由CoCrTa合金(Co:75原子%和Cr:20原子%,Ta:5原子%)制成。A comparative magnetic recording medium was prepared in the same manner as in Example 24, except that the first magnetic layer was made of a CoCrTa alloy (Co: 75 atomic % and Cr: 20 atomic %, Ta: 5 atomic %).

通过使用滑动测试仪(glide tester),对在上述实例和对比实例中所制备的每个磁记录介质进行滑动测试,其中将滑动高度调节为0.3微英寸(1英寸≈25.4mm)。通过使用读写分析仪RWA 1632(美国GUZIK的产品)对通过测试的记录介质进行记录再现特征方面的进一步调查。Each of the magnetic recording media prepared in the above-mentioned examples and comparative examples was subjected to a glide test by using a glide tester in which the glide height was adjusted to 0.3 microinch (1 inch≈25.4 mm). A further investigation was conducted on the recording medium that passed the test in terms of recording and reproduction characteristics by using a read/write analyzer RWA 1632 (product of GUZIK, USA).

在电磁转换特征(轨迹平均振幅总和(TAA)、50%脉冲宽度(PW50)、SNR和重写(OW))等方面对记录再现特性进行研究。Recording and reproduction characteristics were studied in terms of electromagnetic conversion characteristics (Track Average Sum of Amplitudes (TAA), 50% Pulse Width (PW50), SNR, and Overwrite (OW)).

采用包括巨磁阻(GMR)元件作为读出部分的复合薄膜磁记录头对记录再现特征进行评估。Recording and reproducing characteristics were evaluated using a composite thin-film magnetic recording head including a giant magnetoresistance (GMR) element as a readout section.

通过测量从1MHz到当写入500kFCI的图形信号时产生的对应于500kFCI的频率之间的积分噪声,对噪声进行评估。将读取输出调节到250kFCI,并通过下列公式计算SNR:SNR=20×log(读取输出/从1MHz到对应于500kFCI的频率之间的积分噪声)。Noise was evaluated by measuring integrated noise from 1 MHz to a frequency corresponding to 500 kFCI generated when writing a pattern signal of 500 kFCI. The read output was adjusted to 250 kFCI and the SNR was calculated by the following formula: SNR = 20 x log (read output/integrated noise from 1 MHz to the frequency corresponding to 500 kFCI).

利用克尔效应磁特征分析仪(RO1900,日本Hitachi ElectronicsEngineering的产品)确定矫顽力(Hc)和矩形比(S*)。Coercive force (Hc) and squareness ratio (S * ) were determined using a Kerr effect magnetic characteristic analyzer (RO1900, product of Hitachi Electronics Engineering, Japan).

结果如表1-1和1-2所示。The results are shown in Tables 1-1 and 1-2.

                                                                     表1-1   第一磁性层组成   第二磁性层组成   第三磁性层组成   矫顽力(Oe)   矩形比(-)   TAA(μV)   OW(dB)   PW50(ns)   SNR(dB)   实例1实例2实例3实例4实例5实例6实例7实例8实例9实例10实例11实例12实例13实例14实例15实例16实例17实例18实例19实例20实例21实例22实例23实例24   75Co20Cr5Zr81Co14Cr5Zr79Co16Cr5Zr77Co18Cr5Zr73Co22Cr5Zr71Co24Cr5Zr79Co20Cr1Zr77Co20Cr3Zr73Co20Cr7Zr71Co20Cr9Zr69Co20Cr11Zr73Co20Cr5Zr2B81Co14Cr5Zr87Co8Cr5Zr85Co10Cr5Zr83Co12Cr5Zr79Co16Cr5Zr77Co18Cr5Zr85Co14Cr1Zr83Co14Cr3Zr79Co14Cr7Zr77Co14Cr9Zr75Co14Cr11Zr75Co20Cr5Zr   60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B69Co22Cr5Pt4B   -----------------------60Co22Cr12Pt6B   4,3514,3254,2954,3354,3674,2714,2514,3254,3964,3574,3114,3524,3924,3114,3554,2954,3714,3814,2914,2884,3124,3624,2784,356   0.810.830.840.810.800.750.780.800.820.810.740.800.810.830.820.810.800.790.780.790.810.820.770.80   1,3541,2251,2491,3291,3851,3961,3021,3171,3681,3961,3921,3651,1969861,0361,1251,2561,2911,1121,1371,2191,2651,2911,351   37.539.239.038.137.137.538.437.936.636.237.537.639.641.040.539.938.637.539.838.937.837.437.235.8   9.429.219.269,379.529.749.589.499.499.559.769.459.309.129.189.259.379.459.349.379.409.519.639.41   18.518.718.718.418.417.518.118.718.618.217.618.718.418.318.418.418.418.217.918.518.418.217.618.1 Table 1-1 Composition of the first magnetic layer Composition of the second magnetic layer Composition of the third magnetic layer Coercivity (Oe) Square ratio (-) TAA(μV) OW(dB) PW50(ns) SNR(dB) Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Example 11 Example 12 Example 13 Example 14 Example 15 Example 16 Example 17 Example 18 Example 19 Example 20 Example 21 Example 22 Example 23 Example 24 75Co20Cr5Zr81Co14Cr5Zr79Co16Cr5Zr77Co18Cr5Zr73Co22Cr5Zr71Co24Cr5Zr79Co20Cr1Zr77Co20Cr3Zr73Co20Cr7Zr71Co20Cr9Zr69Co20Cr11Zr73Co20Cr5Zr2B81Co14Cr5Zr87Co8Cr5Zr85Co10Cr5Zr83Co12Cr5Zr79Co16Cr5Zr77Co18Cr5Zr85Co14Cr1Zr83Co14Cr3Zr79Co14Cr7Zr77Co14Cr9Zr75Co14Cr11Zr75Co20Cr5Zr 60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B60Co22Cr12Pt6B69Co22Cr5Pt4B -----------------------60Co22Cr12Pt6B 4,3514,3254,2954,3354,3674,2714,2514,3254,3964,3574,3114,3524,3924,3114,3554,2954,3714,3814,2914,2884,3124,3624,2784,356 0.810.830.840.810.800.750.780.800.820.810.740.800.810.830.820.810.800.790.780.790.810.820.770.80 1,3541,2251,2491,3291,3851,3961,3021,3171,3681,3961,3921,3651,1969861,0361,1251,2561,2911,1121,1371,2191,2651,2911,351 37.539.239.038.137.137.538.437.936.636.237.537.639.641.040.539.938.637.539.838.937.837.437.235.8 9.429.219.269,379.529.749.589.499.499.559.769.459.309.129.189.259.379.459.349.379.409.519.639.41 18.518.718.718.418.417.518.118.718.618.217.618.718.418.318.418.418.418.217.918.518.418.217.618.1

                                                     表1-2   第一磁性层组成   第二磁性层组成   第三磁性层组成   矫顽力(Oe)   矩形比(-)   TAA(μV)   OW(dB)   PW50(ns)   SNR(dB)   对比实例1对比实例2对比实例3对比实例4对比实例5对比实例6对比实例7   80Co20Cr75Co20Cr5Ta75Co20Cr5Zr86Co14Cr81Co14Cr5Ta80Co20Cr75Co20Cr5Ta   60Co22Cr12Pt6B60Co22Cr12Pt6B75Co20Cr5Zr60Co22Cr12Pt6B60Co22Cr12Pt6B69Co22Cr5Pt4B69Co22Cr5Pt4B   -----60Co22Cr12Pt6B60Co22Cr12Pt6B   4,2164,3191,1264,1964,2154,3114,322   0.760.790.810.740.770.750.74   1,2651,3411,3491,1851,2181,3011,321   37.237.942.538.939.638.238.4   9.629.6410.939.529.699.539.56   17.417.611.617.317.517.217.1 Table 1-2 Composition of the first magnetic layer Composition of the second magnetic layer Composition of the third magnetic layer Coercivity (Oe) Square ratio (-) TAA(μV) OW(dB) PW50(ns) SNR(dB) Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 80Co20Cr75Co20Cr5Ta75Co20Cr5Zr86Co14Cr81Co14Cr5Ta80Co20Cr75Co20Cr5Ta 60Co22Cr12Pt6B60Co22Cr12Pt6B75Co20Cr5Zr60Co22Cr12Pt6B60Co22Cr12Pt6B69Co22Cr5Pt4B69Co22Cr5Pt4B -----60Co22Cr12Pt6B60Co22Cr12Pt6B 4,2164,3191,1264,1964,2154,3114,322 0.760.790.810.740.770.750.74 1,2651,3411,3491,1851,2181,3011,321 37.237.942.538.939.638.238.4 9.629.6410.939.529.699.539.56 17.417.611.617.317.517.217.1

在表1-1和1-2中,例如75Co20Cr5Zr表示Co:75原子%,Cr:20原子%,以及Zr:5原子%。In Tables 1-1 and 1-2, for example, 75Co20Cr5Zr represents Co: 75 at%, Cr: 20 at%, and Zr: 5 at%.

在实例1~12和24、及对比实例1~3和6中,使用Al衬底作为非磁性衬底。在实例13~23及对比实例4和5中,使用玻璃衬底作为非磁性衬底。In Examples 1 to 12 and 24, and Comparative Examples 1 to 3 and 6, an Al substrate was used as the nonmagnetic substrate. In Examples 13 to 23 and Comparative Examples 4 and 5, glass substrates were used as nonmagnetic substrates.

从实例1~6可以清楚地看到,当制成第一磁性层的CoCrZr基合金中的Cr含量处在14~22原子%的范围中时,磁记录介质具有改善的SNR。相反,当Cr含量为24原子%时,则磁化不足,并且SNR降低。It can be clearly seen from Examples 1-6 that the magnetic recording medium has improved SNR when the Cr content in the CoCrZr-based alloy making up the first magnetic layer is in the range of 14-22 atomic %. On the contrary, when the Cr content is 24 atomic %, the magnetization is insufficient, and the SNR is lowered.

从实例1和7~11可以清楚地看到,当制成第一磁性层的CoCrZr基合金中的Zr含量处在1~9原子%的范围中时,磁记录介质具有改善的SNR。尤其是,当Zr含量处在3~7原子%的范围中时,SNR最大。当Zr含量为11原子%时,则磁化不足,并且SNR降低。It is clear from Examples 1 and 7-11 that the magnetic recording medium has improved SNR when the Zr content in the CoCrZr-based alloy making up the first magnetic layer is in the range of 1-9 atomic %. Especially, when the Zr content is in the range of 3 to 7 atomic %, the SNR is the largest. When the Zr content is 11 atomic %, the magnetization is insufficient, and the SNR is lowered.

从实例12可以清楚地看到,当向制成第一磁性层的CoCrZr基合金中增加B作为添加元素时,则改善了SNR。As is clear from Example 12, when B is added as an additive element to the CoCrZr-based alloy forming the first magnetic layer, the SNR is improved.

从对比实例1和2可以清楚地看到,当将CoCr基合金或CoCrTa基合金用作第一磁性层时,磁记录层具有比包括由CoCrZr基合金制成的第一磁性层的磁记录层差的SNR。As can be clearly seen from Comparative Examples 1 and 2, when a CoCr-based alloy or a CoCrTa-based alloy is used as the first magnetic layer, the magnetic recording layer has an Poor SNR.

从对比实例3可以清楚地看到,当将CoCrZr基合金用作第二磁性层时,矫顽力显著降低,SNR也显著降低。As is clear from Comparative Example 3, when a CoCrZr-based alloy is used as the second magnetic layer, the coercive force is significantly lowered, and the SNR is also significantly lowered.

从实例13~18可以清楚地看到,当制成第一磁性层的CoCrZr基合金中的Cr含量处在8~18原子%的范围中时,磁记录介质具有改善的SNR。From Examples 13-18, it can be clearly seen that the magnetic recording medium has improved SNR when the Cr content in the CoCrZr-based alloy making up the first magnetic layer is in the range of 8-18 atomic %.

从实例19~23可以清楚地看到,当制成第一磁性层的CoCrZr基合金中的Zr含量处在1~9原子%的范围中时,磁记录介质具有改善的SNR。特别是,当Zr含量处在3~7原子%的范围中时,SNR最大。当Zr含量为11原子%时,对磁化没有影响,但是矩形比和SNR降低。As is clear from Examples 19-23, when the Zr content in the CoCrZr-based alloy making up the first magnetic layer is in the range of 1-9 atomic %, the magnetic recording medium has improved SNR. In particular, when the Zr content is in the range of 3 to 7 atomic %, the SNR is the largest. When the Zr content was 11 atomic %, there was no effect on magnetization, but the squareness ratio and SNR decreased.

从对比实例3和4可以清楚地看到,当将CoCr基合金或CoCrTa基合金用于第一磁性层时,磁记录层具有比包括由CoCrZr基合金制成的第一磁性层的磁记录层差的SNR。As can be clearly seen from Comparative Examples 3 and 4, when a CoCr-based alloy or a CoCrTa-based alloy is used for the first magnetic layer, the magnetic recording layer has an Poor SNR.

实例24的磁记录介质包括第一磁性层、第一非磁性耦合层、第二磁性层、第二非磁性耦合层、第三磁性层(也就是说,该磁记录介质包括三个磁性层和两个非磁性耦合层)。在具有这样的结构的磁记录介质中,当第一磁性层由CoCrZr基合金制成时,该磁记录介质具有比对比实例6和7的磁记录介质更优异的SNR。The magnetic recording medium of Example 24 includes a first magnetic layer, a first nonmagnetic coupling layer, a second magnetic layer, a second nonmagnetic coupling layer, and a third magnetic layer (that is, the magnetic recording medium includes three magnetic layers and two non-magnetically coupled layers). In the magnetic recording medium having such a structure, when the first magnetic layer was made of a CoCrZr-based alloy, the magnetic recording medium had a more excellent SNR than those of Comparative Examples 6 and 7.

工业应用性Industrial Applicability

由于本发明的磁记录介质包括由CoCrZr基合金制成的第一磁性层,从而降低了介质噪声。Since the magnetic recording medium of the present invention includes the first magnetic layer made of a CoCrZr-based alloy, medium noise is reduced.

Claims (14)

1.一种磁记录介质,其以如下顺序在非磁性衬底上包括至少非磁性底涂层、第一磁性层、非磁性耦合层、第二磁性层、以及保护层,1. A magnetic recording medium comprising at least a nonmagnetic undercoat layer, a first magnetic layer, a nonmagnetic coupling layer, a second magnetic layer, and a protective layer on a nonmagnetic substrate in the following order, 其中所述第二磁性层与所述第一磁性层反铁磁性耦合;以及wherein the second magnetic layer is antiferromagnetically coupled to the first magnetic layer; and 所述第一磁性层由CoCrZr合金制成。The first magnetic layer is made of CoCrZr alloy. 2.一种磁记录介质,其以如下顺序在非磁性衬底上包括至少非磁性底涂层、第一磁性层、非磁性耦合层、第二磁性层、非磁性耦合层、第三磁性层、以及保护层,2. A magnetic recording medium comprising at least a nonmagnetic undercoat layer, a first magnetic layer, a nonmagnetic coupling layer, a second magnetic layer, a nonmagnetic coupling layer, and a third magnetic layer on a nonmagnetic substrate in the following order , and the protective layer, 其中所述第三磁性层与所述第二磁性层反铁磁性耦合;wherein the third magnetic layer is antiferromagnetically coupled to the second magnetic layer; 所述第二磁性层与所述第一磁性层反铁磁性耦合;以及the second magnetic layer is antiferromagnetically coupled to the first magnetic layer; and 所述第一磁性层由CoCrZr合金制成。The first magnetic layer is made of CoCrZr alloy. 3.如权利要求1或2所述的磁记录介质,其中所述第一磁性层包括5~22原子%的Cr和1~10原子%的Zr。3. The magnetic recording medium according to claim 1 or 2, wherein the first magnetic layer comprises 5 to 22 atomic % of Cr and 1 to 10 atomic % of Zr. 4.如权利要求1至3中任一所述的磁记录介质,其中所述第一磁性层的厚度在0.5~10nm的范围中。4. The magnetic recording medium according to any one of claims 1 to 3, wherein the thickness of the first magnetic layer is in the range of 0.5 to 10 nm. 5.如权利要求1至4中任一所述的磁记录介质,其中所述非磁性耦合层由选自于Ru、Rh、Ir、Cr、Re、Ru基合金、Rh基合金、Ir基合金、Cr基合金、以及Re基合金中的至少一种制成;以及所述非磁性耦合层的厚度在0.5~1.5nm的范围中。5. The magnetic recording medium as claimed in any one of claims 1 to 4, wherein said non-magnetic coupling layer is selected from Ru, Rh, Ir, Cr, Re, Ru-based alloys, Rh-based alloys, Ir-based alloys , Cr-based alloy, and Re-based alloy; and the thickness of the non-magnetic coupling layer is in the range of 0.5-1.5 nm. 6.如权利要求1至5中任一所述的磁记录介质,其中所述非磁性底涂层具有多层结构,包括由Cr制成的层或由Cr基合金制成的层,所述Cr基合金包括Cr和选自于Ti、Mo、Al、Ta、W、Ni、B、Si及V中的至少一种。6. The magnetic recording medium according to any one of claims 1 to 5, wherein said nonmagnetic undercoat layer has a multilayer structure comprising a layer made of Cr or a layer made of a Cr-based alloy, said The Cr-based alloy includes Cr and at least one selected from Ti, Mo, Al, Ta, W, Ni, B, Si and V. 7.如权利要求1至5中任一所述的磁记录介质,其中所述非磁性底涂层具有多层结构,包括含有NiAl基合金、RuAl基合金、以及Cr基合金中的一种的层;其中所述Cr基合金包括Cr和Ti、Mo、Al、Ta、W、Ni、B、Si及V中的一种或两种或更多种。7. The magnetic recording medium as claimed in any one of claims 1 to 5, wherein said non-magnetic undercoat layer has a multilayer structure, comprising a layer containing one of NiAl-based alloy, RuAl-based alloy, and Cr-based alloy. layer; wherein the Cr-based alloy includes Cr and one or two or more of Ti, Mo, Al, Ta, W, Ni, B, Si and V. 8.如权利要求1至7中任一所述的磁记录介质,其中所述非磁性衬底是玻璃衬底和硅衬底之一。8. The magnetic recording medium according to any one of claims 1 to 7, wherein the nonmagnetic substrate is one of a glass substrate and a silicon substrate. 9.如权利要求1至8中任一所述的磁记录介质,其中所述非磁性衬底包含由Al、Al基合金、玻璃以及硅中的一种制成的衬底;在所述衬底上,含有NiP或NiP合金中的一种的膜被形成。9. The magnetic recording medium according to any one of claims 1 to 8, wherein said non-magnetic substrate comprises a substrate made of one of Al, Al-based alloy, glass, and silicon; On the bottom, a film containing one of NiP or a NiP alloy is formed. 10.如权利要求1至9中任一所述的磁记录介质,其中所述第二磁性层由CoCrTa基合金、CoCrPtTa基合金、CoCrPtB基合金和CoCrPtBM基合金中的至少一种制成(其中,M表示Ta和Cu中的至少一种)。10. The magnetic recording medium according to any one of claims 1 to 9, wherein the second magnetic layer is made of at least one of a CoCrTa-based alloy, a CoCrPtTa-based alloy, a CoCrPtB-based alloy, and a CoCrPtBM-based alloy (wherein , M represents at least one of Ta and Cu). 11.如权利要求2至9中任一所述的磁记录介质,其中所述第二磁性层和所述第三磁性层由CoCrTa基合金、CoCrPtTa基合金、CoCrPtB基合金以及CoCrPtBM基合金中的至少一种制成(其中M表示Ta和Cu中的至少一种)。11. The magnetic recording medium according to any one of claims 2 to 9, wherein the second magnetic layer and the third magnetic layer are made of a CoCrTa-based alloy, a CoCrPtTa-based alloy, a CoCrPtB-based alloy, and a CoCrPtBM-based alloy. Made of at least one (where M represents at least one of Ta and Cu). 12.一种制造磁记录介质的方法,所述磁记录介质以如下顺序在非磁性衬底上包括至少非磁性底涂层、第一磁性层、非磁性耦合层、第二磁性层以及保护层;其中所述第二磁性层与所述第一磁性层反铁磁性耦合,12. A method of manufacturing a magnetic recording medium comprising at least a nonmagnetic undercoat layer, a first magnetic layer, a nonmagnetic coupling layer, a second magnetic layer, and a protective layer on a nonmagnetic substrate in the following order ; wherein the second magnetic layer is antiferromagnetically coupled to the first magnetic layer, 其中所述方法包括如下步骤,其中由CoCrZr合金制成所述第一磁性层。wherein said method comprises the step wherein said first magnetic layer is made of a CoCrZr alloy. 13.一种制造磁记录介质的方法,所述磁记录介质以如下顺序在非磁性衬底上包括至少非磁性底涂层、第一磁性层、非磁性耦合层、第二磁性层、非磁性耦合层、第三磁性层、以及保护层;所述第三磁性层与所述第二磁性层反铁磁性耦合;以及所述第二磁性层与所述第一磁性层反铁磁性耦合,13. A method of manufacturing a magnetic recording medium comprising at least a nonmagnetic undercoat layer, a first magnetic layer, a nonmagnetic coupling layer, a second magnetic layer, a nonmagnetic a coupling layer, a third magnetic layer, and a protective layer; the third magnetic layer is antiferromagnetically coupled to the second magnetic layer; and the second magnetic layer is antiferromagnetically coupled to the first magnetic layer, 其中所述方法包括如下步骤,其中由CoCrZr合金制成所述第一磁性层。wherein said method comprises the step wherein said first magnetic layer is made of a CoCrZr alloy. 14.一种磁记录和再现装置,包括如权利要求1至11中任一所述的磁记录介质、以及用于在所述磁记录介质中记录信息并从所述磁记录介质再现信息的磁头。14. A magnetic recording and reproducing apparatus comprising the magnetic recording medium as claimed in any one of claims 1 to 11, and a magnetic head for recording information in the magnetic recording medium and reproducing information from the magnetic recording medium .
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