CN1760605A - A kind of microrefrigerator and refrigeration method thereof - Google Patents
A kind of microrefrigerator and refrigeration method thereof Download PDFInfo
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
- F25B2321/001—Details of machines, plants or systems, using electric or magnetic effects by using electro-caloric effects
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B2400/00—General features or devices for refrigeration machines, plants or systems, combined heating and refrigeration systems or heat-pump systems, i.e. not limited to a particular subgroup of F25B
- F25B2400/15—Microelectro-mechanical devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
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- Devices That Are Associated With Refrigeration Equipment (AREA)
Abstract
一种微制冷器及其制冷方法，特别涉及铁电堆阵列微小制冷器及其制冷方法。它以驰豫铁电材料为制冷工质，采用n层铁电堆，m×l铁电堆阵列，共n×m×l个单元制冷片构成微制冷器；每个制冷片采用快速加电场和慢速去电场的电场诱导相变制冷的方法；在不同行列中，同一层制冷片或隔层制冷片以同样的方式工作，各层制冷片加(去)电场工作具有特定的时序和循环；铁电堆阵列之间交替工作；本发明适用于制备小型制冷器和薄/厚膜材料制备微制冷器，克服现有铁电制冷原理下，制冷温降小、施场电压高、制冷量低、需要散热风管(扇)等缺点，具有重量轻、体积小、无噪声、无污染、结构简单、操作和制冷效果控制灵活、制冷启动快、制冷效率高等优点。
A micro-refrigerator and a refrigeration method thereof, in particular to a ferroelectric stack array micro-refrigerator and a refrigeration method thereof. It uses relaxor ferroelectric material as the refrigerant, adopts n-layer ferroelectric stack, m×l ferroelectric stack array, and a total of n×m×l unit cooling chips to form a micro-cooler; each cooling chip uses a fast electric field The method of electric field-induced phase change refrigeration with slow electric field removal; in different ranks, the same layer of refrigerating sheets or interlayer refrigerating sheets work in the same way, and each layer of refrigerating sheets has a specific timing and cycle for adding (removing) electric field The ferroelectric stack arrays work alternately; the present invention is applicable to the preparation of small-scale refrigerators and thin/thick film materials to prepare micro-refrigerators, and overcomes the existing ferroelectric refrigeration principle, which has small cooling temperature drop, high field voltage, and high cooling capacity. It has the advantages of light weight, small size, no noise, no pollution, simple structure, flexible operation and cooling effect control, fast cooling start-up, and high cooling efficiency.
Description
Technical field
The invention belongs to little refrigerator and refrigerating method thereof, particularly small refrigerator of ferroelectric rack array and refrigerating method thereof.
Background technology
The traditional refrigerating method that is applied at present in the electronic equipment has:
(a) utilize the fin of certain-length, freeze based on the mode of free convection;
(b) the strong convection refrigeration of utilizing fan to carry out;
(c) forced convertion and the hot transmission method refrigeration of being undertaken by water or other cooling thing;
(d) semiconductor thermoelectric refrigeration.
Utilize traditional refrigerating method, on the one hand, refrigerator need of work additional mechanical parts or refrigerant liquid, even based on the semiconductor cooler of pyroelectric effect, the hot junction needs fan or mobile refrigerant liquid to lower the temperature, and also has similar problem.On the other hand, refrigerator and device (equipment) to be freezed are independent of each other, can't carry out effectively local refrigeration and suitable adjustment control.
The microelectric technique that develops rapidly now, photoelectron technology and micromechanics electronic system press for uses the microminiature device, the limitation of tradition Refrigeration Technique faces severe challenge, and must explore with research and can contact miniature refrigerator good or that one chip prepares on same substrate, has high refrigerating efficiency, heat conduction efficiency and big refrigerating capacity with heater members.
The ferroelectric material system has excellent pyroelectric effect, i.e. the variation of ambient temperature causes the positive and negative charge relative displacement of ferroelectric crystal, generating electrodesization, thus different in nature bound charge appears at crystal two end surfaces, produce the signal of telecommunication.Material with pyroelectric effect also has backheating and releases electrical effect.Ferroelectric refrigeration principle is to utilize backheating to release electrical effect-electricity to give birth to heat (electro caloric is called for short EC) effect, when promptly ferroelectric material being applied external electric field, and the phenomenon that its temperature changes.If thermal insulation applies electric field and makes the ferroelectric polarization, then the ferroelectric temperature raises, and is called adiabatic polarization heating; Otherwise if thermal insulation applies reversed electric field and makes the ferroelectric depolarising, then the ferroelectric temperature reduces, and is called adiabatic polarization refrigeration.The basic reason that produces refrigeration is: electric field induces the entropy S of para-electric-ferroelectric phase transition to change, and enters the higher-energy state of unordered confusion by orderly low-energy state, need absorb energy from the external world entropy is increased, thereby obtain refrigeration effect.It has similar mechanism with the magnetic refrigeration, but the expensive development and the application that has limited room temperature magnetic refrigerating of high-intensity magnetic field and rare-earth magnetic working material.The low cost of ferroelectric material, having heat-flash releases the crystal of electrical effect and also has simultaneously strong EC effect, so ferroelectric refrigerator had both had refrigerating function, was easy to change electric power polarity again and was applied to the environment that specific needs heats, and was convenient to the thermostatic control of the particular device of specified temp work.
The ferroelectric refrigerator of prior art only limits to single cooling piece Proof-Of Principle, and the refrigeration temperature drop is less than 2K.As document 1: " Ferroelectric refrigeratory materials and their application.Piezoelectric and Acoustooptics ", Vol.16 (8), 1994:31～35, Shebanov LA, Bornman K J.Ferroelectrics, Vol.127,1992:143; Document 2:Xiao D Q, Zhu J G, Yang B, et al. etc. are described, and states such as Russia have reported employing relaxation property Pb (Sc
1/2Nb
1/2) O
3, Pb (Mg
1/3Nb
2/3) O
3(being called for short PST, PMN respectively) ferroelectric sosoloid is realized adiabatic depolarising refrigeration near room temperature, the performance of its single-stage refrigerator is: operation temperature area 210-310K, linear EC effect Δ T
ECBe 1-1.8K.This research has been established technical foundation for worldwide ferroelectric refrigeration research.In the research before this, Luo Xi salt, BaTiO
3, Pb (ZrTi) O
3, SrTiO
3, LiTaO
3, Li
2SO
4, KH
2PO
4Deng the refrigerating material system because the EC effect is too little, or operation temperature area far below room temperature (≤15K), or need applying bias high (more than the 100kV/cm) or too low (the μ Jcm of heat absorption efficiency
-3Level) etc. former thereby be eliminated.Domesticly develop Pb (Mg since the initial stage nineties
1/3Nb
2/3) O
3, Pb (Sc
1/2Ta
1/2) O
3, Pb (Sc
1/2Nb
1/2) O
3And and PbTiO
3The ferroelectric refrigeration effect of solid solution, the latter stage nineties almost openly the report.Present Research such as document 3: " near the depolarization refrigeration effect of ferroelectric ceramics PMN-PT room temperature ", Luo Haihua etc., Zhongshan University's journal, vol.33, No.2,1994:69; Document 4. " research of the ferroelectric refrigeration pottery of PMN-PT ", the Xiao Ding congruence, Acta Physica Sinica, vol.47, No.10,1998:1754 etc. are described, do not consider that the polarization of material heats in the continuous operation, and only depolarising refrigeration temperature drop is less than 2K.The continuous operation of monolithic refrigerator can't be distinguished hot cold junction, the speed scale rate method of temperature drop by energy dissipation in added electric field polarization and the depolarising phase transformation circulation of freezing only.As document 5: as described in patent publication No.: the CN1276506A " electric field-induced phase transition refrigerating method " (Zhang Jinxiu etc.).But 5 in document has provided the BaTiO3 sample in 127 degree (Curie temperature) unpolarized cooling and time relationships, and 127 degree operating temperatures are very high, be not suitable for electronic component room temperature refrigeration, simultaneously, polarizability varies with temperature sensitivity, refrigeration effect varies with temperature bigger, and cooling stability is bad.Document 5 has also provided the PMN-PT sample under different condition, only unpolarized maximum cooling, and the continuously clean refrigeration of circulation does not embody, and all documents all are the acyclic refrigeration of monolithic body material, execute the field voltage height, and device can't carry out bigger refrigeration continuously.
Summary of the invention
The objective of the invention is to overcome the defective that above-mentioned existing ferroelectric material refrigeration exists, that is: the refrigeration temperature drop little, execute field voltage height, refrigerating capacity low, need heat radiation airduct shortcomings such as (fans), needs at small refrigerator, utilize ferroelectric material (ceramic sheet and thin and thick film) and related process, proposed a kind of new little refrigerator of ferroelectric rack array and refrigerating method, it has array pile structure, the work of specific time sequence multi-disc and multistage circulation, has the ferroelectric small refrigerator of practicability of high refrigerating capacity.That the present invention has is in light weight, volume is little, noiseless, pollution-free, simple in structure, operation and refrigeration control flexibly, fast, the refrigerating efficiency advantages of higher of cooling activation, carry heat radiation airduct or fan in the time of can not needing the extra show polarization of document 5.The present invention is not only applicable to ceramic body microminiature refrigerator, more is applicable to the MEMS miniature refrigerator based on the MEMS technology, and has good refrigeration.The present invention is through the emulation and the practical devices experimental verification of different condition, and is respond well.Therefore, the present invention has great potentiality and prospect in the refrigeration and temperature control application that semiconductor and microelectronic component, opto-electronic device, MEMS device and biological medical product etc. need.The present invention has IC compatibility and universality, is applicable to various MEMS devices and IC system, be easy to integrated, be convenient to digital control and the research and development efficient and sensible the miniature MEMS refrigerator.The present invention has explored new refrigeration principle and approach, and be expected to develop into compressor-free, do not have mechanical parts, low-power consumption, easy-operating novel working and room temperature refrigerator.Be particularly suitable for using in microminiature low temperature in microelectronic component, instrument and meter, medicine equipment or the thermostat, especially microminiature MEMS refrigerator has ULIC, light-sensitive device, power device, high frequency transistor, MEMS and the MOEMS elements such as (MOEMS) of its unique function and the cooling of equipment.Miniature refrigerator is in the controlling of production process of chemical industry in addition, the dehumidifying problem of high-power transformer in the power industry (replacing traditional silica gel dehumidifying), control growing epitaxial silicon on the semiconductor technology, the aspect application prospects such as (but 1 orders of magnitude of gas clean-up) of the cold-trap on the vacuum technique is extensive.The present invention is a novelty achievement of current refrigeration technology field, IT and microelectronics technology.
The present invention is by the following technical solutions:
The array structure that the little refrigerator of the present invention adopts multilayer to pile up: ferroelectric (PMN-PT) cooling piece of many thin layers (n layer) and m is capable, I is listed as ferroelectric cooling piece and piles up and constitute m * l system refrigeration heap row.Each thin layer ferroelectric (PMN-PT) system cooling piece upper and lower surface is all draped over one's shoulders Sn/Ag[1 ', 1 "] [2 ', 2 " ,] ... [n; , n "] electrode, between refrigeration lamella that piles up and the layer, between row and row, column and the row by the higher ferroelectric thin layer of same material, certain thickness, the coefficient of heat conduction or mica as the insulating heat-conductive separation layer [I, II, III ... .N], realization is insulated and flash heat transfer.Folded up between each thin layer two sides electrode and lead-in wire (two sides whether only refer to about between two thin layers, and do not comprise two-layer up and down between? please illustrate, answer: add between the both sides).N layer ferroelectric material 1,2,3,4...n form ferroelectric rack, and m * l ferroelectric rack array has n * m * l unit cooling piece.
The little refrigerator of the present invention contacts with the euthermic chip substrate, by the specific time sequence of each thin layer periodic duty and the specific alternation sequential of heap row, realizes low-voltage, many circulations, device continuous operation, big temperature drop and good spatial temperature distribution uniformity.
The little refrigerator of the present invention has adopted the refrigeration structure of " multilayer ferroelectric rack array ": n layer ferroelectric rack arranged, and m * l ferroelectric rack array is total to n * m * l unit cooling piece, n, l, m=1,2,3,4........., n, l, the numerical value of m depend on the caloric value of euthermic chip and the performance of refrigerating material.The ferroelectric cooling piece material of the present invention can adopt the PMNT potsherd, but is not limited to the pottery of this kind material, and all materials with pyroelectric effect all are suitable for.
The little refrigerator of the present invention is realized clean refrigeration temperature drop by the speed scale rate method of energy dissipation in added electric field polarization and the depolarising phase transformation circulation, and its refrigerating method has following feature:
(1) its monolithic of each cooling piece of the present invention, one-cycle process duty comprise and add positive field polarization and add two processes of reversed electric field depolarising, adopt the method for electric field-induced phase transition refrigeration, that is: quick added electric field and remove electric field at a slow speed produces certain refrigerating capacity only of one-cycle process.
(2) in the different ranks, work in the same way, that is:, produce certain clean refrigerating capacity with the quick added electric field of same speed with remove electric field at a slow speed with one deck cooling piece or interlayer cooling piece.
(3) the ferroelectric cooling piece of each layer process that adds (going) electric field has specific sequential and circulation, and purpose is to realize big temperature drop.For example, 1 refrigeration lamella is carrying out the depolarising process of refrigerastion when reaching minimum temperature drop, carry out the extra show polarization of 2 refrigeration lamellas, make the initialization temperature of 2 refrigeration lamellas low than room temperature, the temperature drop the when temperature drop when realizing 2 refrigeration lamella work begins to freeze than 1 refrigeration lamella is low; During 2 refrigeration lamella work, 1 refrigeration lamella continues the work of next circulation, depends on the monolithic refrigeration experiment performance of used refrigerating material circulation timei; When the temperature drop during 2 refrigeration lamella work is minimum, 3 refrigeration lamellas begin circulation, and 1,2 refrigeration lamella continues next circulation, or the 1st layer and the 3rd cooling piece are worked simultaneously, when depolarising refrigeration was finished, the 2nd layer and the 4th layer of cooling piece were started working, and the initialization temperature that makes 2 layers and 4 layers cooling piece is low than the 1st layer and the 3rd layer of initialization temperature, realize big temperature drop, when working the depolarising refrigeration for 2 layers and 4 layers, 1 layer and 3 layers of next circulation of beginning, and the like.The present invention can realize large-scale temperature drop with design refrigerator structure and working method according to the needs of euthermic chip to be freezed.
(4) alternation between the ferroelectric rack array realizes the recovery by turns of working medium necessity, big temperature drop and refrigerating capacity, for example, and every row work and or interlacing work.At n, m when l=1 or material property do not need to recover, can carry out each row of each row and work simultaneously, and as mentioned above, the process of refrigerastion that the ferroelectric cooling piece of each layer adds (going) electric field between the ferroelectric rack layer is followed specific sequential and circulation.Therefore, the present invention can realize refrigeration space uniformity and temperature control preferably.
(5) the present invention can further adjust operation temperature area and refrigeration temperature drop by preparing the ferroelectric working material of various relaxation as required.For example, can be by material preparation process and doping, realize the operation temperature area that needs to the PMNT material, can be implemented in 20 degree--the operation temperature area between 60 degree, also can realize the different operating warm area of other materials.So the refrigerator of the present invention's design can be realized bigger different operation temperature area to different materials.
(6) the present invention between layer by layer, between the ranks by same material, do not add the ferroelectric thin layer of electrode or mica as becoming attached to heat conduction (pyroconductivity is very big) separation layer, realize even flash heat transfer.
The present invention is applicable to that ferroelectric material prepares frigistor and prepares little refrigerator with thin/thick-film material, overcome under the ferroelectric refrigeration principle of prior art, the refrigeration temperature drop is little, execute the field voltage height, refrigerating capacity is low, need heat radiation airduct shortcomings such as (fans), have in light weight, volume is little, noiseless, pollution-free, simple in structure, operation and refrigeration control are flexibly, cooling activation is fast, the refrigerating efficiency advantages of higher, at semiconductor and microelectronic component, opto-electronic device, during refrigeration that MEMS device and biological medical product etc. need and temperature control are used, great potentiality and prospect are arranged.
The refrigerating method and the job step of the little refrigerator of ferroelectric rack array of the present invention are as follows:
(1) duty of single cooling piece comprises and adds positive field polarization and add two processes of reversed electric field depolarising.The present invention utilizes ferroelectric material to have the pyroelectric effect of excellence and the characteristic that backheating is released electrical effect, and single cooling piece is added the positive field polarization at a slow speed, adds the reversed electric field depolarising fast.Simultaneously, reduce single cooling piece thickness, can reduce and execute field voltage.For example, thickness is 200 μ m cooling pieces, need only apply 320V voltage and can make and apply field intensity and reach 16kV/cm.Concrete thickness and array sizes, the refrigeration that is needed by the size of specifically treating cooling module and caloric value decides.For example, 1000um is thick * the concrete course of work of 10mm * 10mmPMNT single ceramic sheet is: with (0～16) kV/cm as positive field, begin by force by null field, at 80s and 40s in two period, increasing progressively field intensity with 8kV/ (cm.min) speed ends to 16kV/cm, switch input electrode polarity then, equally with (0～16) kV/cm as reversed electric field, begin by the 16kV/cm field intensity, respectively at 40s and 40s in two period, end by force with 12kV/ (cm.min) speed field intensity to the null field that successively decreases, finish process of depolarization.The present invention adopts this polarization at a slow speed and the working method of rapid depolarization, can effectively increase the clean refrigerating capacity of one-cycle process.Make single cooling piece of the present invention all reach optimized performance, monolithic, the single cycle temperature drop 0.5K that freezes only.
(2) work simultaneously at the 1st layer and the 3rd cooling piece, when the depolarising refrigeration is finished, the 2nd layer and the 4th layer of cooling piece are started working, the initialization temperature that makes 2 layers and 4 layers cooling piece is low than the 1st layer and the 3rd layer of initialization temperature, realize big temperature drop, when working the depolarising refrigeration for 2 layers and 4 layers, 1 layer and 3 layers of next circulation of beginning.The ferroelectric cooling piece of each layer adds (going) field operation process and has specific sequential and circulation.Perhaps 1 refrigeration lamella is when proceeding to the depolarising process of refrigerastion and reach minimum temperature drop, carry out the extra show polarization of 2 refrigeration lamellas, make the initialization temperature of 2 refrigeration lamellas low than room temperature, the temperature drop the when temperature drop when realizing 2 refrigeration lamella work begins to freeze than 1 refrigeration lamella is low; During 2 refrigeration lamella work, 1 refrigeration lamella continues the work of next circulation, depends on the monolithic refrigeration experiment performance of used refrigerating material circulation timei; When the temperature drop during 2 refrigeration lamella work was minimum, 3 refrigeration lamellas began circulation, and 1,2 refrigeration lamella continues next circulation, and the like.The present invention can design specific refrigerator structure and realize large-scale temperature drop according to euthermic chip needs to be freezed.
(3) the present invention is when each layer freezes by the mode of (2), A-M ranks and C-O ranks are worked simultaneously, and B-N ranks, D-P ranks are worked simultaneously, can realize the uniformity of Temperature Distribution and reduce fluctuation, also can be when device fatigue do not occur, each row and each row cooling piece are worked simultaneously.
(4) the present invention is having under the situation of euthermic chip, can be freezed in advance by refrigerator work earlier, and pre-cooling time depends on the refrigerator structure and treats the caloric value of cooling module.After treating that temperature drop reaches certain value, treat that refrigerating chip just starts working, and equilbrium running at a certain temperature.
Description of drawings
Fig. 1. the structural model schematic diagram of the concrete embodiment of ferroelectric rack array refrigerator of the present invention; Among the figure: 1 is ferroelectric cooling piece, and 2 is electrode, and 3 is edge heat conduction separation layer, and A, B, C......P are different refrigeration heaps.
Fig. 2. refrigerator of the present invention and euthermic chip are in conjunction with the work schematic diagram.
Fig. 3. single cooling piece single cycle variations in temperature schematic diagram.
Fig. 4. the present invention does not have the effect of heater element circularly cooling.
Fig. 5. refrigerator of the present invention is to the effect of 40000W/m3 euthermic chip refrigeration.
Fig. 6 .PMNT refrigerating material performance parameter and environmental condition table.
The specific embodiment
Further specify the present invention below in conjunction with the drawings and specific embodiments.
Figure 1 shows that the structure of the concrete embodiment of the little refrigerator of ferroelectric rack array of the present invention.As shown in Figure 1, the little refrigerator of ferroelectric rack array of the present invention by ferroelectric cooling piece 1 of n layer and m capable * l is listed as ferroelectric cooling piece 1 and piles up formation, cooling piece has folded up electrode and lead-in wire between the two sides about in the of 1.Reach between layer and the layer and accompany the insulating heat-conductive separation layer 3 that the insulating heat-conduction material made by PMNT or mica is made between the ranks.Cooling piece has the ferroelectric material of pyroelectric effect to make by PMNP or other.
Fig. 2 is for treating the little refrigerator bonding state of refrigerating chip substrate and the present invention embodiment model schematic diagram.As shown in Figure 2, this model is to be piled up by the potsherd that 64 sizes are 3mm * 3mm * 1mm to form.Being divided into is 4 row, 4 row, and every row are piled up by 4 layers of potsherd and form.Euthermic chip is of a size of 12mm * 12mm * 3mm, makes as substrate with silicon chip.Treat that refrigerating chip and cooling piece are close together.When the little refrigerator of the present invention enters duty, just can cool off fast and treat refrigerating chip.
Figure 3 shows that the single cooling piece single cycle of the present invention variations in temperature schematic diagram.As shown in Figure 3, single cooling piece of the present invention can reach optimized performance.
Monolithic of the present invention, the single cycle temperature drop 0.5K that freezes only.Reduce single cooling piece thickness, can reduce and execute field voltage, for example, thickness is 200 μ m cooling pieces, need only apply 320V voltage and can make and apply field intensity and reach 16kV/cm.Concrete thickness and array sizes, the refrigeration that is needed by the size of specifically treating cooling module and caloric value decides.For example, 1000um is thick * 10mm * 10mmPMNT single ceramic sheet, duty comprises and adds the positive field polarization and add two processes of reversed electric field depolarising.The concrete course of work is: with (0～16) kV/cm as positive field, begin by force by null field, at 80s and 40s in two period, increase progressively field intensity with 8kV/ (cm.min) speed and end to 16kV/cm, switch input electrode polarity then, equally with (0～16) kV/cm as reversed electric field, begin by the 16kV/cm field intensity, respectively at 40s and 40s in two period, end by force with 12kV/ (cm.min) speed field intensity to the null field that successively decreases, finish process of depolarization.Adopt this polarization at a slow speed and the working method of rapid depolarization, can effectively increase the clean refrigerating capacity of one-cycle process.
The present invention works simultaneously at the 1st layer and the 3rd cooling piece, when the depolarising refrigeration is finished, the 2nd layer and the 4th layer of cooling piece are started working, the initialization temperature that makes 2 layers and 4 layers cooling piece is low than the 1st layer and the 3rd layer of initialization temperature, realize big temperature drop, when working the depolarising refrigeration for 2 layers and 4 layers, 1 layer and 3 layers of next circulation of beginning, the ferroelectric cooling piece of each layer adds (going) field operation and has specific sequential and circulation, perhaps 1 refrigeration lamella is when proceeding to the depolarising process of refrigerastion and reach minimum temperature drop, carry out the extra show polarization of 2 refrigeration lamellas, make the initialization temperature of 2 refrigeration lamellas low than room temperature, the temperature drop the when temperature drop when realizing 2 refrigeration lamella work begins to freeze than 1 refrigeration lamella is low; During 2 refrigeration lamella work, 1 refrigeration lamella continues the work of next circulation, depends on the monolithic refrigeration experiment performance of used refrigerating material circulation timei; When the temperature drop during 2 refrigeration lamella work was minimum, 3 refrigeration lamellas began circulation, and 1,2 refrigeration lamella continues next circulation, and the like.Can design specific refrigerator structure and realize large-scale temperature drop according to euthermic chip needs to be freezed.
When the present invention was freezed by the mode of (2) at each layer, as shown in Figure 1, A-M ranks and C-O ranks were worked simultaneously, capable and the D-P ranks of B-N are worked simultaneously, can realize the uniformity of Temperature Distribution and reduce fluctuation, also can be when device fatigue do not occur, each row and each row cooling piece are worked simultaneously.
The 1st cut-in time is t
10=0, the moment that the i sheet is started working is t
I0, i sheet added electric field time t
i, remove electric field time t
i', a cycle period is T
i, i=1,2 ... n, t
1=t
2=... t
n, t
1'=t
2'=... ..t
n', T
1=T
2=... ..T
n, so: t
I0=(i-1) T
I-1
The obtaining value method of n, m, l is to determine voltage according to monolithic experiment refrigeration, and the rickle sheet number that is needed by saturated maximum temperature drop is determined the size of n; According to single cooling piece, insulating heat-conductive separation layer thickness and the euthermic chip area of waiting to freeze, single cooling piece area is a * b, and separation layer thickness is d, and the euthermic chip area is s * s, so,
A, b, d normal root really test refrigeration according to monolithic, determine by the auxiliary design of finite element simulation.
The present invention can also have under the situation of euthermic chip, and refrigerator is work earlier, freezes in advance, and pre-cooling time depends on the refrigerator structure and treats the caloric value of cooling module.After treating that temperature drop reaches certain value, treat that refrigerating chip just starts working, and equilbrium running at a certain temperature.
Boundary condition of the present invention and physical parameter:
Looking PMNT cooling piece, euthermic chip and surrounding environment does not have exchange heat (vacuum insulation environment), and the initial temperature of cooling piece and euthermic chip is 298K.The heat generation rate of every cooling piece (test data) is every section curve of Fig. 3 and marks, and unit is W/m
3The heat generation rate of euthermic chip is 40000W/m
3The PMN-PT ceramic material is isotropic ceramic material, and its thermal physical property parameter (thermal conductivity factor, specific heat, density) does not vary with temperature and is considered as constant, as shown in Fig. 6 table.
Experimental result of the present invention such as Fig. 4～shown in Figure 6:
Experiment 2, the refrigerator course of work is as testing as described in 1.After the temperature for the treatment of to freeze in advance reached 290.5K, heat generation rate was 40000W/m
3Start working during euthermic chip, all ranks of cooling piece are worked together, to 2400 seconds temperature variation curves as shown in Figure 5.Operating temperature is equilibrated at 290.5 degree.
The present invention adopts the relaxation property Pb (Mg with high EC effect through designs emulation and experimental verification
1/3Nb
2/3) O
3With PbTiO
3(PT) (be called for short PMNT), monomer refrigeration heap is made up of the thin cooling piece of PMNT of 4 layers of (n=4) thickness 1mm, each 3mm of length and width, and refrigeration heap columns is 4 * 4.Heat generation rate is that the 40000W/m3 euthermic chip contacts with refrigerator.Duty comprises and adds the positive field polarization and add two processes of reversed electric field depolarising.The concrete course of work is: with (0～16) kV/cm as positive field, begin by force by null field, at 80s and 40s in two period, increase progressively field intensity with 8kV/ (cm.min) speed and end to 16kV/cm, switch input electrode polarity then, equally with (0～16) kV/cm as reversed electric field, begin by the 16kV/cm field intensity, at 40s and 40s in two period, end by force with 12kV/ (cm.min) speed field intensity to the null field that successively decreases, finish process of depolarization, as shown in Figure 3.Adopt this polarization at a slow speed and the working method of rapid depolarization, can effectively increase the clean refrigerating capacity of one-cycle process.Monolithic, the single cycle temperature drop 0.5K that freezes only.Reduce single cooling piece thickness, can reduce and execute field voltage, for example, thickness is 200 μ m cooling pieces, need only apply 320V voltage and can make and apply field intensity and reach 16kV/cm.Concrete thickness and array sizes, the refrigeration that is needed by the size of specifically treating cooling module and caloric value decides.
The present invention is applicable to that ferroelectric material prepares frigistor and prepares little refrigerator with thin/thick-film material, overcome under the existing ferroelectric refrigeration principle, the refrigeration temperature drop is little, execute the field voltage height, refrigerating capacity is low, need heat radiation airduct shortcomings such as (fans), have in light weight, volume is little, noiseless, pollution-free, simple in structure, operation and refrigeration control are flexibly, cooling activation is fast, the refrigerating efficiency advantages of higher, at semiconductor and microelectronic component, opto-electronic device, during refrigeration that MEMS device and biological medical product etc. need and temperature control are used, great potentiality and prospect are arranged.
Claims (5)
1, a kind of little refrigerator is characterized in that the array structure that its adopts multilayer to pile up: n layer thin layer cooling piece and m is capable, l is listed as ferroelectric cooling piece [1] and piles up and constitute n * m * l refrigeration heap row; Each cooling piece upper and lower surface is all draped over one's shoulders Sn/Ag[1 ', 1 "] [2 ', 2 " ,] ... [n; , n "] electrode [2], between the cooling piece that piles up [1] layer and the layer, row and row, column and be listed as between by the higher ferroelectric thin layer of same material, certain thickness, the coefficient of heat conduction or mica as insulating heat-conductive separation layer [3]; Cooling piece [1] has folded up electrode and lead-in wire up and down between the two sides.
2,, it is characterized in that thin layer cooling piece [1] can adopt PMNT potsherd or other to have the material of pyroelectric effect according to the described little refrigerator of claim 1.
3, the refrigerating method of the described little refrigerator of claim 1 is characterized in that: each cooling piece adopts quick added electric field and goes the method for the electric field-induced phase transition refrigeration of electric field at a slow speed; In the different ranks, work in the same way with one deck cooling piece; The ferroelectric cooling piece of each layer adds (going) field operation and has specific sequential and circulation; Alternation or work simultaneously between the ferroelectric rack array; The size of each cooling piece, ferroelectric rack layer (n), array number (m, l), physical dimension, cycle-index and work schedule, by concrete working material characteristic, monolithic refrigeration, treat that refrigeration device characteristics and needed refrigeration, external condition factors such as (electric field, initial temperature, environment and interactions thereof) determine; Operation temperature area and refrigeration temperature drop can further be adjusted by preparing the ferroelectric working material of different relaxations as required.
4, as little refrigerator refrigerating method as described in the claim 3, it is characterized in that: cooling piece 1,2, the sequential relationship of 3......n work is:
The 1st cut-in time is t
10=0, the moment that the i sheet is started working is t
I0, i sheet added electric field time t
i, remove electric field time t
i', a cycle period is T
i, i=1,2 ... n, t
1=t
2=... t
n, t
1'=t
2'=... t
n', T
1=T
2=... T
n, so: t
I0=(i-1) T
I-1
5, as little refrigerator refrigerating method as described in claim 3 or 4, the obtaining value method that it is characterized in that n, m, l is to determine voltage according to monolithic experiment refrigeration, and the rickle sheet number that is needed by saturated maximum temperature drop is determined the size of n; According to single cooling piece, insulating heat-conductive separation layer thickness and the euthermic chip area of waiting to freeze, single cooling piece area is a * b, and separation layer thickness is d, and the euthermic chip area is s * s, so,
A, b, d normal root really test refrigeration according to monolithic, determine by the auxiliary design of finite element simulation.
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