CN1750287A - Method and device for producing thermoelectric semiconductor device and its products obtained thereof - Google Patents
Method and device for producing thermoelectric semiconductor device and its products obtained thereof Download PDFInfo
- Publication number
- CN1750287A CN1750287A CN200410051491.9A CN200410051491A CN1750287A CN 1750287 A CN1750287 A CN 1750287A CN 200410051491 A CN200410051491 A CN 200410051491A CN 1750287 A CN1750287 A CN 1750287A
- Authority
- CN
- China
- Prior art keywords
- thermoelectric semiconductor
- casting
- type
- thermoelectric
- fusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 162
- 238000000034 method Methods 0.000 title claims abstract description 80
- 239000000463 material Substances 0.000 claims abstract description 103
- 238000005266 casting Methods 0.000 claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 238000005452 bending Methods 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 230000004927 fusion Effects 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 31
- 239000000047 product Substances 0.000 claims description 31
- 230000007246 mechanism Effects 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 18
- 238000003723 Smelting Methods 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 13
- 230000005684 electric field Effects 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 11
- 238000012360 testing method Methods 0.000 claims description 11
- 230000033228 biological regulation Effects 0.000 claims description 9
- 230000005672 electromagnetic field Effects 0.000 claims description 9
- 238000009434 installation Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims description 5
- 238000009527 percussion Methods 0.000 claims description 5
- 230000000750 progressive effect Effects 0.000 claims description 5
- 238000013019 agitation Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 3
- 208000002925 dental caries Diseases 0.000 claims description 3
- 238000013021 overheating Methods 0.000 claims description 3
- 239000000523 sample Substances 0.000 claims description 3
- 239000011265 semifinished product Substances 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 238000012805 post-processing Methods 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims description 2
- 230000007723 transport mechanism Effects 0.000 claims 1
- 239000000155 melt Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 229910002899 Bi2Te3 Inorganic materials 0.000 description 2
- 206010061245 Internal injury Diseases 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000010425 asbestos Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000007499 fusion processing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052895 riebeckite Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical compound Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000002194 freeze distillation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- XCOKHDCPVWVFKS-UHFFFAOYSA-N tellurium tetraiodide Chemical compound I[Te](I)(I)I XCOKHDCPVWVFKS-UHFFFAOYSA-N 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Images
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
This invention discloses a method for manufacturing a thermal electric semiconductor device, the equipment and its products charactering in applying an accurate casting technology to directly cast the melt type P and type N thermal electric semiconductor materials to preset special models separately by quantitatively controlling the exit unit, which casts the materials onto the models separately by a conduit charactering that the P and N thermal electric elements are set at either side of a baffle, the bending part of the metal connection sheets is inserted into the elements and the plane part are fixed on the upper and the lower base plates.
Description
Technical field:
The product that the present invention relates to the manufacture method of thermoelectric semiconductor device and equipment and obtained.
Background technology:
The thermoelectric semiconductor device is the device that the paltie effect of generation produces refrigeration or thermal effect (according to the sense of current) when utilizing electric current to pass through semi-conducting material P, N knot.The structure of industrial typical thermoelectric semiconductor device and operation principle schematic diagram such as Figure of description of the present invention part is shown in Figure 1 at present, its elementary cell is that a P type thermoelectric semiconductor elements (3) and a N type thermoelectric semiconductor elements (4) are coupled to a pair of thermocouple with metal connecting sheet (2), (5), after connecting DC power supply (DC), locate to produce temperature difference and transfer of heat in metal connecting sheet (2), (5), locate temperature decline and heat absorption at metal connecting sheet (2), be called cold junction; Locate temperature at metal connecting sheet (5) and rise and heat release, be called the hot junction.Because the heat exchange amount of a pair of semiconductor thermocouple is very little, usually all semiconductor thermocouple is together in series on circuit some, the all equidistant layout of all galvanic couples and be fixed on heat conductive insulating substrate (1) (upper plate), and heat conductive insulating substrate (6) (lower shoe) between, form the thermoelectric pile of heat conduction parallel-connection structure, wherein heat conductive insulating substrate (1) is a cold junction, and heat conductive insulating substrate (6) is the hot junction.
Traditional P type and N type semiconductor thermocouple element all adopt the machine cuts processing method to make usually, and at first the thermoelectric semiconductor material (normally leaning on shape body crystal ingot) with bulk cuts into sheet, and then cut into the square cross section lean on shape body heat galvanic couple element.The cross-sectional area of leaning on shape body heat galvanic couple element material commonly used is about 1-6 square millimeter (fixed according to product demand), hang scolder at two end faces up and down of thermocouple element material then, respectively these rectangles are leant on body heat galvanic couple element by welding method again and be welded on the heat conductive insulating substrate (1) that fixes metal connecting sheet (2), (5), (6), make the thermoelectric semiconductor heap.
The method of the actual manufacturing thermoelectric semiconductor material that uses has two classes at present, and a class is to adopt crystal growth, and another kind of is powder sintering.The prescription of thermoelectric semiconductor material commonly used is:
P type: Sb2Te3 (70-75%)+Bi2Te3 (25-30%)+p type impurity (Te, Se etc.);
N type: Bi2Te3 (90-93%)+Bi2Se3 (7-10%)+N type impurity (TeI4, Hg2Cl2 etc.).
The method that crystal growth is produced thermoelectric material is to put into the heating furnace heating and melting after raw material are mixed, raw material cool off with the normal freezing method after fusion fully mixes, generate polycrystalline ingot, then polycrystalline ingot is adopted zone-melting process or Grown by CZ Method to become single crystal rod, after heat treatment again single crystal rod is cut on demand the thermocouple element of given size, be welded to the heat conductive insulating substrate and make the thermoelectric semiconductor heap.The technological process of crystal growth production thermoelectric semiconductor heap is as follows:
Batching---melting---crystal growth---heat treatment---section---stripping and slicing---tining---dress element---welding---test
Because thermoelectric semiconductor material monocrystalline crystal has tangible cleavage fissure, mechanical strength is relatively poor, and easy cracking and fragmentation reduce rate of finished products in the follow-up course of processing, and the process-cycle is long, the manufacturing cost height.
For solving the problem that crystal growth exists and reducing cost, now developed the powder sintering manufacturing process of thermoelectric semiconductor.This method is to put into the heating furnace heating and melting after raw material are mixed, raw material adopt quench to solidify after fusion fully mixes, generate polycrystalline ingot, then polycrystalline ingot is broken into the powder of appropriate size, repressed, sinter crystal ingot into, cut into the thermocouple element of given size then on demand, be welded to and make the thermoelectric semiconductor heap on the heat conductive insulating substrate.The technological process of powder sintering production thermoelectric semiconductor heap is as follows:
Batching---melting---quench solidification---fragmentation---briquetting---sintering---section---stripping and slicing---tining---dress element---welding---test.
Can't avoid the pollution problem of production process owing to adopt the powder sintering manufacturing process, and there are a large amount of spaces and crystal boundary in the crystal ingot, cause the resistivity of material to increase, Joule heat increases, degradation under the carrier mobility, make the thermoelectricity capability of semi-conducting material descend, be difficult to obtain satisfied material behavior.
The thermoelectric semiconductor material crystal ingot that above-mentioned two kinds of fabrication process go out, when the thermocouple element of processing given size, the common issue with that exists is that the cutting loss in the thermocouple element course of processing is very big, especially when producing the small dimension thermocouple element, the knife edge loss of cutting tool makes spillage of material sharply increase along with reducing of specification, for example, when cutting the cube of 1 mm side length, spillage of material reaches 60%, and when cutting the cube of 0.5 mm side length, spillage of material will reach 80%, and this is one of major reason that increases production cost.
In addition, in the whole process of production of thermoelectric pile that manufactures a finished product, especially cutting, putting thermocouple element and welding link, be difficult to realize automated production, need expend a large amount of artificial, and process loss is difficult to control, particularly because pre-treatment process (cleaning, hang scolder etc.), carrying and misoperation etc. before the internal injury of the thermocouple element that causes of cutting, thermocouple element welding all can cause thermocouple element to damage.The hidden danger of thermocouple element internal injury can cause the reliability decrease problem of device use.
Because production process is long, pad quantity is big, and each thermocouple element has two pads, and 512 solder joints are arranged once the finished product thermoelectric pile that has only 128 pairs of elements, finished by manual operation under open environment, production efficiency is low, and product quality and output are difficult to guarantee.
Because the spatial limitation of element welding operation, the spacing distance between each thermoelectric element can't reduce, and makes that the element packing density is restricted, has limited the refrigerating capacity of device unit are.
Summary of the invention:
The object of the present invention is to provide a kind of manufacture method of thermoelectric semiconductor device.
Further aim of the present invention is to provide a kind of manufacturing equipment of thermoelectric semiconductor device.
The present invention's purpose further is to provide a kind of thermoelectric semiconductor device of excellent performance.
According to the present invention, the manufacture method of described thermoelectric semiconductor device, it is characterized in that adopting accurate casting technique, direct P type and N type thermoelectric semiconductor material with fusion, by quantitative control discharging mechanism (or additional suitable conduit), cast in respectively in the model of the particular element shape (shown in Figure of description partial graph 2,3,4 of the present invention) that makes in advance.
The invention provides two kinds of production methods: a kind of is to adopt the model casting method directly to produce the semiconductor thermocouple element of regulation shape, and the technological process of production is as follows:
Batching---melting---casting---heat treatment---tining---dress element---welding---test.
Whole process flow has been omitted material section, stripping and slicing operation than traditional handicraft;
Another kind of production method be to use heatproof, heat insulation, insulation, nonhygroscopic, do not make the dividing plate of setting shape with the material of thermoelectric material generation chemical reaction, be fixed on the heat conductive insulating substrate (lower shoe) that metal connecting sheet is installed, the P type of fusion and the N type thermoelectric semiconductor material technological requirement of putting according to P type and N type galvanic couple is molded into respectively in the different dividing plate cavitys, install base plate (the heat conductive insulating substrate of metal connecting sheet has been installed) then, directly generate the semiconductor thermoelectric module semi-finished product; Control the crystallisation by cooling process of watering foundry goods during the casting, apply the electric field or the electromagnetic field of specific direction simultaneously; Adjust material property through technologies such as Overheating Treatment then, finally make finished product.The technological process of production is as follows:
Batching---------casting of band lower shoe is tested to load onto base plate in melting by---heat treatment---.
Whole process flow has been omitted material section, stripping and slicing, tining, dress element, welding sequence than traditional handicraft;
Thermoelectric semiconductor device of the present invention, the elementary cell of its structure are the temperature difference heat galvanic couple to constituting by P type and N type thermoelectric semiconductor elements, connect with metal between each thermoelectric semiconductor elements.Finished product thermoelectric semiconductor device is formed by connecting to thermoelectric semiconductor elements by some, and it is formed on the circuit is cascaded structure, is parallel-connection structure aspect heat conduction.
Need to prove: traditional bonding jumper is the planar structure parallel with base plate, adopts method bonding or chemical plating to be installed on the base plate, as Fig. 1, Fig. 5 of specification of the present invention part, shown in Figure 6.
The present invention proposes the syndeton of conduction and heat conduction between a kind of novel thermoelectric semiconductor elements, and as Fig. 7 of this Figure of description part, shown in Figure 8, wherein Fig. 8 is a kind of device of unsymmetric structure, and purpose is to improve radiating efficiency, improves the refrigerating capacity and the temperature difference.This novel conductive and heat conduction syndeton that the present invention proposes, under the situation that does not change thermoelectric element volume structure parameter (design size and shape), (do not change heat conduction structure, promptly do not change the conduction thermal component), increase the contact area of sheet metal and thermoelectric semiconductor, in the time of can effectively reducing electric current and flow through thermoelectric semiconductor elements, the Joule heat that the volume resistance of himself produces: for identical thermoelectric element structure and operating mode, when equivalent conductive area doubles, the Joule heat that the volume resistance of thermoelectric semiconductor elements self produces will descend 75%, therefore can effectively reduce internal loss, improve refrigerating capacity.This novel conductive and heat conduction syndeton deisgn product according to the present invention's proposition, can under the situation that does not increase own vol resistance, (not increase the Joule heat component), increase the distance (increasing height) of cool and heat ends, perhaps reduce the sectional area of thermoelectric element, thereby reduce the influence of conduction thermal component, can effectively improve the refrigerating efficiency of thermoelectric semiconductor device.
P type of the present invention and N type thermoelectric semiconductor elements form in model by accurate casting process, and the metal intercell connector that connects thermoelectric semiconductor elements is fixed on the upper and lower base plate.It is that (conduction is all good with heat conductivility for metal connection material that one of execution mode is to use copper sheet, the sectional area of copper sheet is to guarantee operating current and heat-conductive characteristic degree of being), the part that contacts with thermoelectric semiconductor material is done surface applied and is handled, use close with the thermoelectric semiconductor material wlding material that helps, as nickel, bismuth, antimony, tin etc.The wall thickness that is spaced apart model between each thermoelectric semiconductor elements, so thermoelectric semiconductor elements can realize the installation of maximal density.
According to the present invention, described thermoelectric semiconductor casting model is divided into two classes according to the production process difference:
A class thermoelectric semiconductor casting model of the present invention is reusable model, is used for making specially the casting production of thermoelectric semiconductor elements, and model can be reused after the thermoelectric semiconductor elements demoulding of casting.The work area of this class casting model is bigger, so that improve production of units efficient, the cell size of model is exactly final thermoelectric element dimensions.Owing to will reuse, therefore require the mechanical strength of model to get well, specifically be to adopt industrial ceramics, perhaps adopt surface treated refractory metal material to make casting model.
Another kind of thermoelectric semiconductor casting model of the present invention is disposable model: the specification of model and thermoelectric semiconductor final products consistent size (supporting), be installed in a part (being casting model before the casting, is the dividing plate between the thermoelectric semiconductor elements after the casting) that constitutes product on the product.Make this class model need use heatproof, heat insulation, insulation, nonhygroscopic, not with the material of thermoelectric material generation chemical reaction, specifically be to adopt mica, asbestos, industrial ceramics, heatproof high molecule thermosets etc.
Thermoelectric semiconductor material smelting furnace of the present invention adopts custom-designed thermostatically controlled smelting furnace, is equipped with to vacuumize and gas shield device, and melting under vacuum state is heated melting after for example being evacuated to 2Pa; Under the Buchholz protection environment, carry, for example adopt high pure nitrogen or inert gas as protective gas; The mode of heating of smelting furnace can use the resistance heating mode: for example adopt resistance wire, electrothermal tube, the heating of Elema constant resistance formula heater element; Also can adopt the inductive loop heating system: for example adopt the frequency conversion firing equipment, utilize electromagnetic wave heating, melting original material.The operating temperature range of smelting furnace is controlled to be 550 ℃---and 850 ℃; Fusion process needs fully to stir makes the even chemical combination of material, embodiment adopt electromagnetic wave energy, mechanical shock, wave smelting furnace or special agitating apparatus stirs the material of fusion.
The present invention adopts the curdled appearance of extra electric field, electromagnetic method control thermoelectric semiconductor elements.Electromagnetic field generator produces magnetic field with solenoid or superconducting coil, influences the thermoelectric semiconductor elements crystalline state by regulating magnetic direction.And during extra electric field control thermoelectric semiconductor material process of setting, on thermoelectric semiconductor elements, apply high-pressure pulse electric.
Thermoelectric semiconductor material heat treatment process of the present invention is carried out after thermoelectric semiconductor elements is made, the element heat treatment process, use general chamber type electric resistance furnace during for the mass production thermoelectric semiconductor elements, serialization is produced and is used tunnel kiln, and the annealing operating temperature range is made as 250 ℃---and 550 ℃.
Furtherly, the described model that is full of the fusion thermoelectric semiconductor material in cooling, process of setting, is positioned in electric field or the electromagnetic field environment;
The thermoelectric semiconductor material that has solidified is in the heat treatment of Buchholz protection environment.
Adopt method provided by the invention, the semiconductor thermocouple element of producing, its surface is the natural coagulation moulding, does not have the machine cuts machining damage, so compact structure, surface-brightening, avoided the various losses of the course of processing fully, and can realize continuous, automated production from the semi-conducting material melting to production semiconductor thermoelectric module finished product, it is simple therefore to have production technology, the production efficiency height, low cost and other advantages.
Description of drawings:
Fig. 1 is thermoelectric semiconductor device architecture and operation principle schematic diagram;
Fig. 2 is the hexagonal model schematic diagram of thermoelectric semiconductor elements material casting model of the present invention;
Fig. 3 is the round model schematic diagram of thermoelectric semiconductor elements material casting model of the present invention;
Fig. 4 is a thermoelectric semiconductor elements material casting model square pattern type schematic diagram of the present invention;
Fig. 5 is that the rectangle thermoelectric semiconductor elements that the heat conductive insulating substrate (1) of metal connecting sheet (2) is installed is installed the upper plate structural representation of usefulness;
Fig. 6 is that the rectangle thermoelectric semiconductor elements of the heat conductive insulating substrate (6) that metal connecting sheet (5) is installed that uses of the present invention is installed the lower shoe structure and the thermoelectric element scheme of installation of usefulness;
Fig. 7 is the thermoelectric semiconductor device architecture schematic diagram that novel metal brace (2a), (5a) are installed that the present invention proposes;
Fig. 8 is the thermoelectric semiconductor device architecture schematic diagram that another novel metal brace (2b), (5b) are installed that the present invention proposes;
Fig. 9 is a thermoelectric semiconductor material casting equipment schematic diagram of the present invention.
Embodiment:
Execution mode one:
Thermoelectric semiconductor device of the present invention, the elementary cell of its structure are the temperature difference heat galvanic couple to constituting by P type and N type thermoelectric semiconductor elements, connect with bonding jumper between each thermoelectric semiconductor elements.Finished product thermoelectric semiconductor device is formed by connecting to thermoelectric semiconductor elements by some, and it is formed on the circuit is cascaded structure, is parallel-connection structure aspect heat conduction.
Fig. 5 is that the rectangle thermoelectric semiconductor elements that the heat conductive insulating substrate (1) of metal connecting sheet (2) is installed is installed the upper plate structural representation of usefulness;
Fig. 6 is that the rectangle thermoelectric semiconductor elements that the heat conductive insulating substrate (6) of metal connecting sheet (5) is installed is installed the lower shoe structure and the thermoelectric element scheme of installation of usefulness, P, N are respectively P type and N type thermoelectric element among the figure, and two metal connecting sheets that stretch out the heat conductive insulating substrate end-face are terminals that lead-in wire is installed;
Need to prove: traditional sheet metal is the planar structure parallel with base plate, adopts method bonding or chemical plating to be installed on the base plate, as Fig. 1, Fig. 5, shown in Figure 6;
Fig. 7 is the thermoelectric semiconductor device architecture schematic diagram that novel metal brace (2a), (5a) are installed that the present invention proposes;
Fig. 8 is the thermoelectric semiconductor device architecture schematic diagram that another novel metal brace (2b), (5b) are installed that the present invention proposes;
The present invention proposes the syndeton of conduction and heat conduction between a kind of novel thermoelectric semiconductor elements, and as Fig. 7, shown in Figure 8, wherein Fig. 8 is a kind of device of unsymmetric structure, and purpose is to improve radiating efficiency, improves the refrigerating capacity and the temperature difference.This novel conductive and heat conduction syndeton that the present invention proposes, under the situation that does not change thermoelectric element volume structure parameter (design size and shape), (do not change heat conduction structure, promptly do not change the conduction thermal component), increase the contact area of sheet metal and thermoelectric semiconductor, in the time of can effectively reducing electric current and flow through thermoelectric semiconductor elements, the Joule heat that the volume resistance of himself produces: for identical thermoelectric element structure and operating mode, when equivalent conductive area doubles, the Joule heat that the volume resistance of thermoelectric semiconductor elements self produces will descend 75%, therefore can effectively reduce internal loss, improve refrigerating capacity.This novel conductive and heat conduction syndeton deisgn product according to the present invention's proposition, can under the situation that does not increase own vol resistance, (not increase the Joule heat component), increase the distance (increasing height) of cool and heat ends, perhaps reduce the sectional area of thermoelectric element, thereby reduce the influence of conduction thermal component, can effectively improve the refrigerating efficiency of thermoelectric semiconductor device.
Figure 7 shows that the thermoelectric semiconductor device architecture schematic diagram that novel metal brace (2a), (5a) are installed that the present invention proposes: P, N are respectively P type (3) and N type (4) thermoelectric element among the figure, (1), (6) are respectively upper and lower bottom plates, (7a) be dividing plate (being casting model before the casting, is dividing plate after the casting); Being respectively in the both sides of dividing plate (7a) is P type (3) and N type (4) thermoelectric element, metal connecting sheet (2a), the rectangular bending in (5a) two ends, described bending part probes in P type (3) and N type (4) thermoelectric element, as shown in Figure 7, its bending part is close to dividing plate and P type (3) and N type (4) thermoelectric element, and planar section is separately fixed on upper and lower bottom plate (1), (6).Connection between the described thermoelectric semiconductor elements reduces the Joule heat loss under the situation that does not change the hot state of conduction, improve refrigerating efficiency.
P type of the present invention and N type thermoelectric semiconductor elements form in model by accurate casting process, and the metal connecting sheet that connects thermoelectric semiconductor elements is fixed on the upper and lower base plate.Present embodiment be to use copper sheet be metal connecting sheet material (conduction with heat conductivility all good, the sectional area of copper sheet is to guarantee operating current and heat-conductive characteristic degree of being), the part that contacts with thermoelectric semiconductor material is done surface applied and is handled, use close with the thermoelectric semiconductor material wlding material that helps, as nickel, bismuth, antimony, tin etc.The wall thickness that is spaced apart model (dividing plate) between each thermoelectric semiconductor elements, so thermoelectric semiconductor elements can realize the installation of maximal density.
Present embodiment is reused model, is used for making specially the casting production of thermoelectric semiconductor elements, and model can be reused after the thermoelectric semiconductor elements demoulding of casting.The work area of this class casting model is bigger, so that improve production of units efficient, the cell size of model is exactly final thermoelectric element dimensions.Owing to will reuse, therefore require the mechanical strength of model to get well, can adopt industrial ceramics, perhaps adopt surface treated refractory metal material to make casting model.
According to present embodiment, it is characterized in that adopting accurate casting technique, direct P type and N type thermoelectric semiconductor material with fusion, by quantitative control discharging mechanism (or additional suitable conduit), cast in respectively in the model of the particular element shape (shown in Figure of description partial graph 2,3,4 of the present invention) that makes in advance, be respectively honeycomb type, circle, rectangular model shown in Fig. 2,3,4.
According to present embodiment: adopt the model casting method directly to produce the semiconductor thermocouple element of regulation shape, the technological process of production is as follows:
Batching---melting---casting---heat treatment---tining---dress element---welding---test.
Be the workflow schematic diagram of present embodiment as shown in figure 10.Wherein (19) are the weighing ingredient sectors, prepare P type (19P) and N type (19N) thermoelectric semiconductor material respectively; Send into smelting furnace (20P) respectively and reach (20N) middle heating and melting; By (25P) and (25N) be transported to casting furnace (21P) respectively and (21N) in (this casting furnace is the body of heater assembly except that (16), (17) among Fig. 5); Casting model (27) is transported on the casting workbench (16) that percussion mechanism (17) is installed by feed mechanism (22); Nozzle (15P) reaches the position of regulation in the progressive die type (27) of (15N) the fusion thermoelectric semiconductor material being cast respectively; Casting model (27) is sent to feed mechanism (23) by material conveying mechanism (28) and locates to install base plate (1), is transported to directional process mechanism (24) then; Continuous tunnel furnace (26) heat treatment of annealing; Locate to carry out the procedural test go-on-go in (29).
Whole process flow has been omitted material section, stripping and slicing operation than traditional handicraft.
Execution mode two
As shown in Figure 8: the thermoelectric semiconductor device architecture schematic diagram that another novel metal brace (2b), (5b) are installed that the present invention proposes: (3) are P type thermoelectric semiconductor elements among the figure, (4) N type thermoelectric semiconductor elements, (1), (6) are respectively upper and lower bottom plates, (7b) be dividing plate (being casting model before the casting, is dividing plate after the casting); Probe in P type and the N type thermoelectric semiconductor elements after the described metal connecting sheet bending.
Other is with execution mode one, the thermoelectric semiconductor casting model is disposable model: the specification of model and thermoelectric semiconductor final products consistent size (supporting), be installed in a part (being casting model before the casting, is the dividing plate between the thermoelectric semiconductor elements after the casting) that constitutes product on the product.Make this class model need use heatproof, heat insulation, insulation, nonhygroscopic, not with the material of thermoelectric material generation chemical reaction, can adopt mica, asbestos, industrial ceramics, heatproof high molecule thermosets etc.
Difference be to use heatproof, heat insulation, insulation, nonhygroscopic, do not make the dividing plate of setting shape with the material of thermoelectric material generation chemical reaction, be fixed on the heat conductive insulating substrate (lower shoe) that metal connecting sheet is installed, the P type of fusion and the N type thermoelectric semiconductor material technological requirement of putting according to P type and N type galvanic couple is molded into respectively in the different dividing plate cavitys, install base plate (the heat conductive insulating substrate of metal connecting sheet has been installed) then, directly generate the semiconductor thermoelectric module semi-finished product; Control the crystallisation by cooling process of watering foundry goods during the casting, apply the electric field or the electromagnetic field of specific direction simultaneously; Adjust material property through technologies such as Overheating Treatment then, finally make finished product.The technological process of production is as follows:
Batching---------casting of band lower shoe is tested to load onto base plate in melting by---heat treatment---.
Whole process flow has been omitted material section, stripping and slicing, tining, dress element, welding sequence than traditional handicraft.
Execution mode three
Thermoelectric semiconductor material smelting furnace of the present invention adopts custom-designed thermostatically controlled smelting furnace, is equipped with to vacuumize and gas shield device, and melting under vacuum state is heated melting after for example being evacuated to 2Pa; Under the Buchholz protection environment, carry, for example adopt high pure nitrogen or inert gas as protective gas; The mode of heating of smelting furnace can use the resistance heating mode: for example adopt resistance wire, electrothermal tube, the heating of Elema constant resistance formula heater element; Also can adopt the inductive loop heating system: for example adopt the frequency conversion firing equipment, utilize electromagnetic wave heating, melting original material.The operating temperature range of smelting furnace is controlled to be 550 ℃---and 850 ℃; Fusion process needs fully to stir to make the even chemical combination of material, and present embodiment adopts electromagnetic wave energy, mechanical shock, waves the material of smelting furnace or special agitating apparatus stirring fusion.
The present invention adopts the curdled appearance of extra electric field, electromagnetic method control thermoelectric semiconductor elements.Electromagnetic field generator produces magnetic field with solenoid or superconducting coil, influences the thermoelectric semiconductor elements crystalline state by regulating magnetic direction.And during extra electric field control thermoelectric semiconductor material process of setting, on thermoelectric semiconductor elements, apply high-pressure pulse electric.
Thermoelectric semiconductor material heat treatment process of the present invention is carried out after thermoelectric semiconductor elements is made, the element heat treatment process, use general chamber type electric resistance furnace during for the mass production thermoelectric semiconductor elements, serialization is produced and is used tunnel kiln, and the annealing operating temperature range is made as 250 ℃---and 550 ℃.
Furtherly, the described model that is full of the fusion thermoelectric semiconductor material in cooling, process of setting, is positioned in electric field or the electromagnetic field environment;
The thermoelectric semiconductor material that has solidified is in the heat treatment of Buchholz protection environment.
Execution mode four
Other is with execution mode four, prepare P type and N type thermoelectric semiconductor material respectively according to the material mixture ratio of product specification, put into different smelting furnace (20P) and (20N) be evacuated to 2Pa, be heated to 550 ℃---850 ℃ of fusions, during agitation as appropriate make the even chemical combination of material; Then under the protective gas environment, by (25P) and (25N) be transported to respectively casting furnace (21P) and (21N) in, insulation is at 550 ℃---700 ℃; The casting model (27) that lower shoe (6) are housed is transported to by feed mechanism (22) on the casting workbench (16) that percussion mechanism (17) is installed, and the thermoelectric semiconductor material of fusion reaches the position of regulation in the progressive die type (27) of (15N) casting respectively by nozzle (15P); The casting model (27) that is full of the fusion thermoelectric semiconductor material is sent to feed mechanism (23) by material conveying mechanism (28) and locates to install base plate (1), be transported to directional process mechanism (24) then and locate cooling, the semi-conductor thermoelectric material of fusion is solidified under electric field or electromagnetic field environment; Send into then in the continuous tunnel furnace (26) according to the heat treatment of annealing of the cooling process of annealing process regulation; Locate to carry out the procedural test go-on-go in (29), qualified products after sending into postprocessing working procedures processing (sign, packing etc. are handled, printed in installation lead-in wire, mildew-resistant) are put the final products packing in storage, finish process of producing product.In go-on-go test link (29) whole production processes before, all under the protective atmosphere environment, produce.
Execution mode five
Prepare P type and N type thermoelectric semiconductor material respectively according to the material mixture ratio of product specification, put into different smelting furnace (20P) and reach (20N) (notes: the numeral of tape character P, N, numeral operation or device number, character P are represented P type thermoelectric semiconductor material, and N represents N type thermoelectric semiconductor material.Down with) in be evacuated to 2Pa, be heated to 550 ℃---850 ℃ of fusions, during agitation as appropriate make the even chemical combination of material; Then under the protective gas environment, by (25P) and (25N) be transported to respectively casting furnace (21P) and (21N) in, insulation is at 550 ℃---700 ℃; Casting model (27P) and (27N) be transported on casting workbench (16P) that percussion mechanism (17P), (17N) are installed, (16N) by feed mechanism (22P) and (22N), the thermoelectric semiconductor material of fusion reaches during the progressive die type (27P) of (15N) casting respectively reaches (27N) by nozzle (15P); Be full of the casting model (27P) of fusion thermoelectric semiconductor material and (27N) be transported to directional process mechanism (24) and locate cooling, the semi-conductor thermoelectric material of fusion is solidified under magnetic field environment by material conveying mechanism (28); Send into then in the continuous tunnel furnace (26) according to the heat treatment of annealing of annealing process cooling process, the thermoelectric semiconductor elements after the annealing is poured out device is continued in the back according to traditional diamond-making technique manufacture process from model.
Execution mode six
As shown in Figure 9: wherein (18) are the feed arrangements that leads to casting crucible (8).Casting crucible (8) outside is equipped with temperature control heating device (11), and is fixed on the vibration machine (10); Casting crucible (8), vibration machine (10), temperature control heating device (11) integral installation are in body of heater (12); Pumped vacuum systems (9), by-pass valve control (F2) and protective gas device (13), by-pass valve control (F4) are housed on the body of heater (12); Casting crucible (8) is equipped with discharge nozzle (14), by-pass valve control (F3) and discharging opening (15); Casting, transfer table (16) are fixed on the bumper (17).
Claims (10)
1, a kind of manufacture method of thermoelectric semiconductor device is characterized in that; Adopt accurate casting technique, directly,, cast in respectively in the model of the particular element shape that makes in advance by quantitative control discharging mechanism with the P type and the N type thermoelectric semiconductor material of fusion.
2, the method for the manufacturing of a kind of thermoelectric semiconductor device according to claim 1 is characterized in that: quantitatively control discharging mechanism by conduit, the P type and the N type thermoelectric semiconductor material of fusion cast in respectively in the model of particular element shape.
3, the method for the manufacturing of a kind of thermoelectric semiconductor device according to claim 1,---melting---casting---heat treatment---tining---dress element---welding---test that it is characterized in that: adopt the model casting method directly to produce the semiconductor thermocouple element of regulation shape, the technological process of production is as follows: batching.
4, the method of the manufacturing of a kind of thermoelectric semiconductor device according to claim 1, it is characterized in that: adopt heatproof heat insulation, insulation, nonhygroscopic, do not make the dividing plate of setting shape with the material of thermoelectric material generation chemical reaction, installed on the heat conductive insulating substrate (6) (lower shoe) of metal connecting sheet, the P type of fusion and the N type thermoelectric semiconductor material technological requirement of putting according to P type and N type galvanic couple is molded into respectively in the different dividing plate cavitys, install base plate (1) (the heat conductive insulating substrate of metal connecting sheet has been installed) then, directly generate the semiconductor thermoelectric module semi-finished product; Control the crystallisation by cooling process of watering foundry goods during the casting, apply the electric field or the electromagnetic field of specific direction simultaneously; Adjust material property through technologies such as Overheating Treatment then, finally make finished product, the technological process of production is as follows: batching, and------casting of band lower shoe---test to load onto base plate by---heat treatment---in melting.
5, the method for the manufacturing of a kind of thermoelectric semiconductor device according to claim 1, it is characterized in that: adopt accurate casting technique, under constant temperature and Buchholz protection environment, the P type and the N type thermoelectric semiconductor material of fusion cast in respectively in the model of set particular element shape;
6, the method for the manufacturing of a kind of thermoelectric semiconductor device according to claim 1, it is characterized in that: prepare P type and N type thermoelectric semiconductor material respectively according to the material mixture ratio of product specification, put into different smelting furnace (20P) and (20N) be evacuated to 2Pa, be heated to 550 ℃---850 ℃ of fusions, during agitation as appropriate make the even chemical combination of material; Then under the protective gas environment, by (25P) and (25N) be transported to respectively casting furnace (21P) and (21N) in, insulation is at 550 ℃---700 ℃; The casting model (27) that lower shoe (6) are housed is transported to by feed mechanism (22) on the casting workbench (16) that percussion mechanism (17) is installed, and the thermoelectric semiconductor material of fusion reaches the position of regulation in the progressive die type (27) of (15N) casting respectively by nozzle (15P); The casting model (27) that is full of the fusion thermoelectric semiconductor material is sent to feed mechanism (23) by material conveying mechanism (28) and locates to install base plate (1), be transported to directional process mechanism (24) then and locate cooling, the semi-conductor thermoelectric material of fusion is solidified under electric field or electromagnetic field environment; Send into then in the continuous tunnel furnace (26) according to the heat treatment of annealing of the cooling process of annealing process regulation; Locate to carry out the procedural test go-on-go in (29), qualified products after sending into postprocessing working procedures processing (sign, packing etc. are handled, printed in installation lead-in wire, mildew-resistant) are put the final products packing in storage, finish process of producing product.In go-on-go test link (29) whole production processes before, all under the protective atmosphere environment, produce.
7, the method for the manufacturing of a kind of thermoelectric semiconductor device according to claim 1, it is characterized in that: prepare P type and N type thermoelectric semiconductor material respectively according to the material mixture ratio of product specification, put into different smelting furnace (20P) and reach (20N) (notes: the numeral of tape character P, N, numeral operation or device number, character P represents P type thermoelectric semiconductor material, and N represents N type thermoelectric semiconductor material.Down with) in be evacuated to 2Pa, be heated to 550 ℃---850 ℃ of fusions, during agitation as appropriate make the even chemical combination of material; Then under the protective gas environment, by (25P) and (25N) be transported to respectively casting furnace (21P) and (21N) in, insulation is at 550 ℃---700 ℃; Casting model (27P) and (27N) be transported on casting workbench (16P) that percussion mechanism (17P), (17N) are installed, (16N) by feed mechanism (22P) and (22N), the thermoelectric semiconductor material of fusion reaches during the progressive die type (27P) of (15N) casting respectively reaches (27N) by nozzle (15P); Be full of the casting model (27P) of fusion thermoelectric semiconductor material and (27N) be transported to directional process mechanism (24) and locate cooling, the semi-conductor thermoelectric material of fusion is solidified under magnetic field environment by material conveying mechanism (28); Send into then in the continuous tunnel furnace (26) according to the heat treatment of annealing of the cooling process of annealing process regulation, the thermoelectric semiconductor elements after the annealing is poured out device is continued in the back according to traditional diamond-making technique manufacture process from model.
8, a kind of equipment of making the described thermoelectric semiconductor device of claim 1, it is characterized in that: the casting workbench can be in the accurate running fix of X-Y direction, vibrating mechanism and material transport mechanism are installed, and the operating frequency of adjusting bumper at casting cycle helps melted material to be full of die cavity smoothly.
9, equipment according to claim 8 is characterized in that: feed arrangement (18) leads to casting crucible (8), and casting crucible (8) outside is equipped with temperature control heating device (11), and is fixed on the vibration machine (10); Casting crucible (8), vibration machine (10), temperature control heating device (11) integral installation are in body of heater (12), the by-pass valve control (F4) of the by-pass valve control (F2) of pumped vacuum systems (9), pumped vacuum systems (9) and protective gas device (13), protective gas device (13) is housed on the body of heater (12), and the by-pass valve control (F3) and the discharging opening (15) of discharge nozzle (14), discharge nozzle (14) is equipped with in casting crucible (8) bottom; Casting, transfer table (16) are fixed on the bumper (17).
10, a kind of thermoelectric semiconductor device, it is characterized in that: being respectively in the both sides of dividing plate (7a) is P type (3) and N type (4) thermoelectric element, the bending part of metal connecting sheet probes in P type (3) and N type (4) thermoelectric element, and planar section is separately fixed on upper and lower bottom plate (1), (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200410051491.9A CN1750287A (en) | 2004-09-14 | 2004-09-14 | Method and device for producing thermoelectric semiconductor device and its products obtained thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200410051491.9A CN1750287A (en) | 2004-09-14 | 2004-09-14 | Method and device for producing thermoelectric semiconductor device and its products obtained thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1750287A true CN1750287A (en) | 2006-03-22 |
Family
ID=36605613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200410051491.9A Pending CN1750287A (en) | 2004-09-14 | 2004-09-14 | Method and device for producing thermoelectric semiconductor device and its products obtained thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1750287A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101356658B (en) * | 2006-11-30 | 2011-02-16 | 松下电器产业株式会社 | Power generation method employing thermal power generation element, thermal power generation element and method for fabricating the same, thermal power generation device |
| CN101447548B (en) * | 2008-12-26 | 2011-03-30 | 中国科学院上海硅酸盐研究所 | Method for making thermoelectric devices |
| EP2362457A3 (en) * | 2010-02-27 | 2012-07-04 | The Boeing Company | Integrated thermoelectric honeycomb core and method |
| CN103456876A (en) * | 2013-06-25 | 2013-12-18 | 陈志明 | Manufacturing method of P type semiconductor element for refrigeration or heating device |
| CN105789426A (en) * | 2016-04-13 | 2016-07-20 | 中国华能集团清洁能源技术研究院有限公司 | Mini-type thermoelectric module and manufacturing method thereof |
| CN106449962A (en) * | 2015-08-06 | 2017-02-22 | 中国科学院宁波材料技术与工程研究所 | Automatic packaging assembly line |
| CN107204396A (en) * | 2016-03-18 | 2017-09-26 | 现代自动车株式会社 | Flexible thermoelectric element and its manufacture method |
| CN110421773A (en) * | 2017-09-01 | 2019-11-08 | 顺德职业技术学院 | A kind of foam process of thermoelectric semiconductor filling mold |
| CN112038478B (en) * | 2020-09-15 | 2023-09-26 | 上海商皓电子科技有限公司 | Manufacturing process of semiconductor refrigeration element and element |
-
2004
- 2004-09-14 CN CN200410051491.9A patent/CN1750287A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101356658B (en) * | 2006-11-30 | 2011-02-16 | 松下电器产业株式会社 | Power generation method employing thermal power generation element, thermal power generation element and method for fabricating the same, thermal power generation device |
| CN101447548B (en) * | 2008-12-26 | 2011-03-30 | 中国科学院上海硅酸盐研究所 | Method for making thermoelectric devices |
| EP2362457A3 (en) * | 2010-02-27 | 2012-07-04 | The Boeing Company | Integrated thermoelectric honeycomb core and method |
| US8487177B2 (en) | 2010-02-27 | 2013-07-16 | The Boeing Company | Integrated thermoelectric honeycomb core and method |
| US8835743B2 (en) | 2010-02-27 | 2014-09-16 | The Boeing Company | Integrated thermoelectric honeycomb core |
| CN103456876A (en) * | 2013-06-25 | 2013-12-18 | 陈志明 | Manufacturing method of P type semiconductor element for refrigeration or heating device |
| WO2014206163A1 (en) * | 2013-06-25 | 2014-12-31 | 苏州伟源新材料科技有限公司 | Method for manufacturing p-type semiconductor element for refrigeration or heating device |
| CN103456876B (en) * | 2013-06-25 | 2016-02-24 | 陈志明 | For freezing or heating the P type semiconductor element manufacture method of device |
| CN106449962A (en) * | 2015-08-06 | 2017-02-22 | 中国科学院宁波材料技术与工程研究所 | Automatic packaging assembly line |
| CN106449962B (en) * | 2015-08-06 | 2019-04-02 | 中国科学院宁波材料技术与工程研究所 | Automate packaging production line |
| CN107204396B (en) * | 2016-03-18 | 2023-09-29 | 现代自动车株式会社 | Flexible thermoelectric element and method for manufacturing same |
| CN107204396A (en) * | 2016-03-18 | 2017-09-26 | 现代自动车株式会社 | Flexible thermoelectric element and its manufacture method |
| CN105789426A (en) * | 2016-04-13 | 2016-07-20 | 中国华能集团清洁能源技术研究院有限公司 | Mini-type thermoelectric module and manufacturing method thereof |
| CN110421773B (en) * | 2017-09-01 | 2021-04-23 | 顺德职业技术学院 | A foaming process of thermoelectric semiconductor filling mold |
| CN110421773A (en) * | 2017-09-01 | 2019-11-08 | 顺德职业技术学院 | A kind of foam process of thermoelectric semiconductor filling mold |
| CN112038478B (en) * | 2020-09-15 | 2023-09-26 | 上海商皓电子科技有限公司 | Manufacturing process of semiconductor refrigeration element and element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101369624A (en) | Thermoelectric material, thermoelectric element, and thermoelectric module, and their manufacturing methods | |
| CN104959604B (en) | A kind of controlled high energy beam selective melting method and apparatus of shaped region thermograde | |
| US8388883B2 (en) | Process for producing thermoelectric semiconductor materials and legs | |
| US10566514B2 (en) | Thermoelectric module | |
| CN1750287A (en) | Method and device for producing thermoelectric semiconductor device and its products obtained thereof | |
| CN2777761Y (en) | Thermoelectric semiconductor device | |
| JP2006040963A (en) | Thermoelectric module manufacturing method | |
| CN110783448B (en) | A method for fabricating micro thermoelectric devices based on femtosecond laser technology | |
| CN101728477B (en) | A preparation method of CeyFe4Sb12/Ca3Co4O9 (y=0.8～1.2) based bulk gradient thermoelectric material | |
| CN112342617A (en) | Bismuth telluride zone-melting ingot casting mold and using method thereof | |
| JP4894416B2 (en) | Thermoelectric material manufacturing method, thermoelectric element manufacturing method, and thermoelectric module manufacturing method | |
| JP2009289911A (en) | Method of manufacturing thermoelectric semiconductor material | |
| CN113493924A (en) | Inorganic flexible and plastic semiconductor single crystal InSe material and preparation method and application thereof | |
| EP2403026A2 (en) | Connection structure of elements and connection method | |
| CN1104375A (en) | Semiconductor thermoelectric device and its material manufacturing method and equipment | |
| JP3548560B2 (en) | Thermoelectric module | |
| JP2013012571A (en) | Thermoelectric conversion module and manufacturing method thereof | |
| CN115915888A (en) | Preparation method of semiconductor refrigerating sheet and semiconductor refrigerating module | |
| CN223663589U (en) | A cooling device for silicon carbide preparation | |
| JP6809852B2 (en) | Thermoelectric conversion element and thermoelectric conversion module | |
| CN222492534U (en) | Battery cooling plate welding equipment | |
| CN113629180B (en) | Packaging method of miniature semiconductor refrigerator | |
| CN118932211A (en) | High-strength and high-thermal-conductivity CuAgYSi alloy material for heat spreader and preparation method thereof | |
| CN102364665B (en) | Synthetic method of integrated circuit packaging material | |
| CN120099615A (en) | A method for preparing large-size silver antimony tellurium-based thermoelectric semiconductor single crystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |