CN1614760A - Bonding method and apparatus - Google Patents

Abstract

Provided are bonding method and its device for effectively mounting a mounting member on a substrate. A plurality of aligned chips are pressed with a head from the upper portion of an elastic member which is interposed between these chips and the head to cover the chips. The elastic member 6 uniformly pressurizes the chips by absorbing variations of the thickness thereof for every chip, and infrared rays emitted and focused from an infrared ray irradiation part located below the substrate irradiate only the rear surface of the substrate on which the chip is mounted, to heat and cure the resin of the substrate. It is therefore possible to simultaneously mount the plurality of the chips on the substrate and to avoid thermal stress which might be otherwise exerted on the entire substrate.

Description

Overlapping method and its overlaying device

technical field

The present invention relates to a bonding method and device for mounting mounting components such as semiconductor elements and surface mount components on substrates such as resin substrates and glass substrates, and particularly relates to a mounting technology for efficiently mounting components on substrates .

Background technique

For example, in the manufacturing process of conventional substrates (such as flat panel display panels such as liquid crystal, EL (Electro Luminescence), plasma display, etc.), mounting components (such as semiconductor chips, etc.) are mounted on the substrate. As a bonding method for mounting a mounting member (hereinafter referred to as "chip") on a substrate, there is a method of bonding a resin such as an anisotropic conductive film (ACF: Anisotropic Conductive Film) and a non-conductive resin (NCP: Non- Conductive Paste), etc. are sandwiched between the substrate and the chip, and the thermocompression bonding device is pressed from above the chip, while the resin is heated and hardened, and the thermocompression is bonded to the substrate.

Specifically, as shown in FIG. 1 , each chip 4 is thermocompression-bonded in such a way that a plurality of heads are sandwiched between the head 31 and the support table 7 .

However, when using this overlapping device, there are the following problems.

That is, there is a variation in the thickness of each chip, and there is a problem that the chip cannot be fixed to the substrate with high precision unless the head is pressed against the chip.

In addition, when the elastic material is pressed by the heating tool as a whole, even if the variation in the thickness of the chip can be absorbed, the elastic material becomes thick, so that heat transfer is difficult. Even if heating is performed from the substrate side using a heating stage, mounting efficiency deteriorates in the case of a substrate having poor thermal conductivity such as a glass substrate.

Since the distance between adjacent chips is small, it is not possible to heat and press adjacent chips at the same time with a head that is larger in shape than the chip. Therefore, as shown in FIG. The way to equip the head 31. That is, since a plurality of chips 4 cannot be thermocompression-bonded at one time, there is a disadvantage in that work efficiency is poor.

At this time, when infrared rays are irradiated from below for heat curing, the resin in the part of the chip that is not pressed is cured without pressure. For example, when ACF is used, the conductive particles in the resin The pressure piece on the chip side is in contact with the substrate electrode, and as a result, there is a problem that poor conduction occurs.

In order to avoid the above-mentioned poor conduction, it is necessary to arrange a member that shields the infrared rays irradiated to the part of the chip that is not pressurized by the head, which not only complicates the device structure, but also leads to the disadvantage of lowering the working efficiency. as a result of.

If the pressure on the chip is released while maintaining the high temperature heating, the resin is above the glass transition point (Tg), so it cannot be completely cured. Depressurization is carried out under the deformed and deflected shape caused by the difference. Such deformation and deflection will cause a gap between the pressed electrode and the press block, resulting in an increase in resistance value and poor bonding.

In addition, since the coefficient of linear expansion of the chip and the substrate is different, in the cooling process after the resin is heated and hardened, the difference in shrinkage between the chip and the substrate will cause deflection. Cracks may occur on the resin, which may lead to increased resistance and poor bonding.

Contents of the invention

An object of the present invention is to provide a bonding method and an apparatus thereof capable of efficiently mounting a mounting member on a substrate.

In order to achieve the above object, the present invention adopts the following structure.

In the lapping method of the present invention, the resin is sandwiched between the mounting member and the substrate, and the mounting member is installed on the substrate. The method includes the following processes:

A pressurization process in which the elastic material is sandwiched between the multiple mounting members on the substrate and the pressurizing device, and the multiple mounting members are sandwiched between the pressing device and the supporting member that supports the substrate. ;

and a heating process of irradiating infrared rays to the resin in the pressurized state to heat harden.

According to the bonding method of the present invention, since the plurality of mounting members on the substrate are sandwiched with elastic material in a covered shape, and the pressing device is used to simultaneously pressurize from above the elastic material, therefore, the thickness of the chip is offset by the elastic material. Absorb, pressurize the chip evenly. At this time, infrared rays irradiated from the substrate side pass through the substrate to heat and harden the resin. Accordingly, a plurality of mounting members can be efficiently mounted on the substrate at one time.

In addition, as the resin, it is preferable to use a resin mixed with conductive particles. That is, the mounting member is thermocompression bonded to the substrate with a resin containing conductive particles interposed therebetween. In this way, since the plurality of attachment members are uniformly pressed, the conductive particles contained in the resin are also uniformly elastically deformed. As a result, the contact area of the conductive particles with the mounting member and the substrate can be sufficiently ensured, and poor resistance value can be avoided.

In addition, the substrate is preferably a flat display panel. With the method of the present invention, since the mounting members on the substrate are thermally bonded at one time, it is not necessary to perform multiple heat treatments like multiple heads. Therefore, it is suitable for a flat display panel that easily receives thermal stress. Also, since the flat display panel is a glass substrate through which infrared rays are easily transmitted, it is suitable for this mode.

Moreover, in order to achieve the above object, the present invention also adopts the following structure.

The bonding method of the present invention further includes a cooling process in which the resin is cured by heating and then cooled to below the vicinity of the glass transition point, and then the pressurization of the mounting member is released.

According to the bonding method of the present invention, after the mounting member is thermally and pressure-bonded to the substrate, it is cooled to below the glass transition point corresponding to the resin. Therefore, the resin is almost completely cured, and the pressure is released after a low temperature, so that deformation and deflection caused by the difference in thermal expansion between the substrate and the chip can be prevented, and good connection of all electrodes can be obtained.

The support member is preferably heated simultaneously during the heating process. In this way, by heating the support member, heat from the support member is transferred to the substrate. In this way, both the chip and the substrate are heated so that both members are at substantially the same temperature, so that warpage caused by a difference in thermal expansion coefficient between the two members can be alleviated. In particular, when the substrate is a flat display panel, since infrared rays pass through the substrate, it is preferable to adopt a structure in which the temperature of the supporting member is raised and the heat is directly transferred from the supporting member to the flat display panel.

Also, the elastic body is preferably a heat insulating member. According to this method, since the mounting member is covered with a heat-insulating elastic body, it is possible to prevent heat from leaking from the surface to be joined through the elastic body. Thereby, heat hardening of resin can be efficiently performed.

Moreover, in order to achieve the above object, the present invention also adopts the following structure.

The bonding device of the present invention sandwiches the resin between the mounting member and the substrate, and mounts the mounting member on the substrate. The device includes the following elements:

placing and holding a holding table for holding the substrate;

a single pressurizing device that simultaneously pressurizes a plurality of mounting members on the placed substrate;

an elastic material sandwiched between the mounting members and the pressing means when the plurality of mounting members are pressurized;

a support member supporting the mounting portion of the mounting member of the substrate from below;

and a heating device for irradiating infrared rays from below the substrate to heat and harden the resin.

According to the overlapping device of the present invention, a single pressurizing device is used to simultaneously pressurize a plurality of mounting members placed and held on the substrate of the holding table from above with an elastic material, and to support the substrate from below using a supporting member. . At this time, infrared rays are irradiated from below the substrate to heat and harden the resin. Thereby, a plurality of mounting members can be efficiently mounted on the substrate at one time.

In addition, the support member is preferably a glass support table, and the infrared rays output from the heating device pass through the glass support table to irradiate only the part of the chip mounted on the substrate. Except for a part of the surface, the other part is covered with a metal film.

According to this configuration, the infrared rays output from the heating device pass through the glass support table and irradiate only the portion of the substrate on which the mounting member is mounted. Therefore, the substrate is only locally heated and temperature rise of the entire substrate can be avoided. The result is that it is suitable for substrates with poor thermal stress such as flat panel display panels.

Also, it is preferable to cover the glass support base with a metal film, and to heat the glass support base while irradiating with infrared rays.

According to this structure, the glass support base is used as a heater by raising the temperature of the glass support base itself by using the glass support base as a metal film together with the heat-absorbing plate glass. In this way, heat can be directly transferred from the front end of the glass support table supporting the substrate to the substrate portion on which the chip is mounted, and at the same time, the resin can be heated and hardened more efficiently by heating by infrared radiation. In addition, since the glass support table can be used as a heater, it is not necessary to separately arrange a heater.

Also, the metal film covering the glass support table is preferably any of aluminum, gold, copper, and chrome.

In order to achieve the above object, the present invention also adopts the following structure.

The bonding device of the present invention further includes the following element: a heater for heating the glass support table.

According to this structure, the glass support table is heated by the heater, and the heat from the glass support table can be directly transferred to the substrate. In this way, when using a glass substrate that transmits infrared rays but does not tend to increase in temperature, the temperature difference between the substrate and the mounting member can be reduced.

Moreover, it is preferable that the heating device has an ellipsoid-shaped space covered with a metal film inside, and reflects emitted infrared rays to the metal film, condenses them, and outputs them.

According to this structure, the inner wall of the heating device having an ellipsoidal internal space is covered with a metal film, and the radiated infrared rays are reflected by the inner metal film, condensed, and output. In this way, infrared rays can be irradiated only to the portion on the substrate where the member is mounted. In addition, infrared rays can be condensed and irradiated to a predetermined location, and the resin can be heated efficiently. In addition, the term "ellipsoidal shape" refers to a shape in which the longitudinal section is ellipsoidal and has depth.

In order to achieve the above object, the present invention also adopts the following structure.

The bonding device of the present invention further includes a cooling device for cooling the heat-hardened resin to below the vicinity of the glass transition point.

According to this structure, after the mounting member is heated and hardened on the substrate, it can be cooled to below the vicinity of the glass transition point corresponding to the resin by cooling with a cooling device such as air blowing. In this way, the resin is almost completely cured, and the pressure is released after the temperature becomes low, so that deformation and deflection caused by the difference in thermal expansion between the substrate and the chip can be prevented, and good connection of all electrodes can be obtained.

In order to achieve the above object, the present invention also adopts the following structure.

The bonding device of the present invention further includes the following element: an air nozzle for blowing air to the rear side of the substrate.

With this structure, by arranging the air nozzle on the back side of the substrate, when the mounting member is thermocompression bonded to the substrate after the resin is heated and cured, only the mounting part is irradiated with infrared rays to heat, and the other area on the back of the substrate is heated by air. was cooled. In this way, for example, when the substrate is a glass substrate and has a polarizing film on the back side, the polarizing film having poor heat resistance can be cooled and protected.

In order to explain the present invention, some forms considered to be suitable at present are illustrated, but it should be understood that the invention is not limited to the structure and method shown in the figures.

Description of drawings

FIG. 1 is a perspective view showing a general structure of a conventional main crimping device.

Fig. 2 is a perspective view showing a general structure of the main crimping device in the first and second embodiments.

Fig. 3 is a cross-sectional view showing the structure of main parts around the head in the first embodiment.

Fig. 4 is a cross-sectional view showing the structure of main parts of the device of the embodiment.

FIG. 5 is a cross-sectional view showing a state where a chip is thermocompression-bonded on a substrate.

Fig. 6 is a schematic configuration diagram showing the configuration of main parts around the head in the second embodiment.

Fig. 7 is a flow chart showing the actual crimping method of the apparatus of the second embodiment.

Detailed ways

An embodiment of the present invention will be described below with reference to the drawings.

[first embodiment]

In this embodiment, an example of the case where a mounting member, that is, a chip is mounted on a substrate using resin such as ACP (Anisotropic Conductive Paste), ACF, NCP, and NCF (Non-Conductive Film) will be described.

As the "mounting member" in the present invention, it is generally possible to consider the types and types of IC chips, semiconductor chips, optical components, surface mount components, chips, wafers, TCP (Tape Carrier Package), FPC (Flexible Printed Circuit), etc. Regardless of the size, it refers to all forms of the bonding side with the substrate, COG (Chip On Glass) of the chip bonding method to the flat panel display panel, and OLB (Outer Lead Bonding) of the TCP and FPC bonding method.

The "substrate" in the present invention means, for example, a resin substrate, a glass substrate, a film substrate, etc., as long as it is a substrate that easily transmits infrared light or easily absorbs and generates heat.

The "infrared rays" output from the heating device in the present invention refer to, for example, infrared rays with wavelengths including far-infrared and near-infrared. As near-infrared rays, for example, it is preferable to have wavelengths in the range of 800 to 1200 nm.

First, the apparatus used in this embodiment will be specifically described with reference to the drawings.

Fig. 2 is a perspective view showing the general structure of the lapping device in the present invention, that is, the main crimping device, Fig. 3 is a side view showing the main part structure of the embodiment device, and Fig. 4 is a side view showing the schematic structure of the embodiment device view.

As shown in FIG. 2 , the main crimping device 1 in the present invention has: a movable table 3 for horizontally holding a substrate 2 conveyed from a temporary crimping unit not shown in the figure; Pressing device 5; elastic material 6 sandwiched between chip 4 and pressing device 5; glass support table 7 for sandwiching and supporting chip 4 together with pressing device 5 from below substrate 2; heating and hardening resin and a cooling device 9 for cooling the substrate 2 .

As shown in FIG. 2 , the movable table 3 has a substrate holding table 10 for sucking and holding the substrate 2, and the substrate holding table 10 is configured to be movable in two horizontal axes (X, Y) directions and vertical (Z) directions. , and around the Z axis (θ) direction.

The pressurizing device 5 has a head 12 that is connected to an air cylinder 11 disposed above the device 5 and can move up and down. The head 12 is convex and extends along the chip arrangement direction of the substrate 2 . That is, the plurality of chips 4 are simultaneously pressurized by the elastic material 6 from the tip of the protrusion.

The elastic material 6 is sandwiched between the pressing device 5 and the chip 4, and is suspended on the winding roller 13 and the take-out roller 14 which are equipped to sandwich the head 12 in the standby position. In addition, by winding this elastic material 6 , new elastic material 6 can be supplied from the take-out roller 14 . In addition, as the elastic material 6, for example, a silicon wafer with crossed (Japanese: クロス) glass can be used, and it is preferable to use an elastic material having heat-insulating properties.

By using an insulating elastic material, it is possible to prevent the heat transferred from the non-bonding surface side of the chip 2 to the elastic material from leaking out. As a result, the resin can be heat-cured more efficiently.

The thickness of the elastic material 6 can be appropriately changed according to the member used and the like.

As shown in Figures 2 and 3, the glass support table 7 is a cone-shaped body with a flat part, and its front end can support the back part of the substrate 2 on which the chip 4 is mounted, and is aligned with the chip arrangement direction of the substrate 2 like the pressing device 5. extend. Aluminum was vapor-deposited on the inclined portion 15 of the substrate side surface (upper in FIG. 3 ). Only the flat portion is open. That is, the infrared rays output from the infrared irradiation unit 8 pass through the glass support table 7 and are output only from the opening 16 to irradiate the resin on the substrate.

By vapor-depositing aluminum on the inclined portion 15 of the glass support table 7, infrared rays do not leak from this portion, so that infrared rays are not irradiated to portions on the substrate on which the chip 4 is not mounted. Moreover, by heating the glass support table 7 by using heat-absorbing plate glass together, the board|substrate 2 can be heated by this heat|fever.

In this way, the temperature rise of the entire substrate can be avoided only by locally heating the substrate 2 . Moreover, the glass support table 7 itself can only pass infrared rays, and does not accumulate excessive heat such as a heater. As a result, the substrate 2 is not subjected to thermal stress caused by the glass support table 7 itself.

As shown in FIGS. 2 and 4 , the infrared irradiating unit 8 has a block-like appearance and is disposed below the glass support table 7 . It has an ellipsoidal space 17 inside, and a heater 18 that emits infrared rays (such as near infrared rays and far infrared rays) at the bottom. Also, the inner wall thereof is covered with a metal film 19 such as gold or the like. In addition, the infrared irradiation unit 8 corresponds to the heating device of the present invention.

That is, the infrared rays radiated from the heater 18 are reflected by the metal film 19 on the inner wall, condensed to the opening on the output side, that is, to the glass support 7 shown by the arrow in FIG. 4 , and output.

As shown in FIG. 3 , the cooling device 9 is disposed on the left and right sides of the glass support table 7 , and supplies air between the inclined portion 15 of the glass support table 7 and the rear surface side of the substrate 2 . That is, the back surface of the substrate irradiated with infrared rays and the surface of the inclined portion 15 of the glass support table 7 adjacent to the substrate 2 are cooled.

The control unit 20 shown in FIG. 4 , once the heating and curing treatment of the resin is completed, air is supplied from the cooling device 9 to cool the substrate 2 and the glass support table 7, and when the temperature of the substrate reaches the glass transition point (Tg) of the resin ), stop the air supply.

As a method of setting the time and conditions of the cooling and the like, the conditions are set while measuring the respective temperatures of the chip 4 , the substrate 2 , and the resin through a test in advance. In this way, in actual installation, the temperature and the like are controlled based on the conditions and time obtained in advance, so it is not necessary to actually measure the temperature and the like.

When cooling at a high speed, it is preferable to blow air directly on the chip 4, the resin, and the upper part of the substrate from the upper part of the substrate.

Next, a series of operations for mounting a chip on a substrate using the ACF using the apparatus of the above embodiment will be described with reference to the accompanying drawings. In this embodiment, a case in which a chip is completely and actually crimped on a substrate is taken as an example, and a structure in which a chip is temporarily crimped on a substrate in advance in a preliminarily crimping step and transported will be described.

In the temporary pressure-bonding process at the previous stage, the substrate 2 on which the chips 4 are temporarily pressure-bonded with resin interposed therebetween is transported to the main pressure-bonding apparatus 1 by a transport mechanism not shown. The substrate 2 is transferred onto the substrate holding table 10 of the movable table 3 and held by suction. The substrate holding table 10 moves forward (in the Y direction in FIG. 2 ), that is, between the head 12 and the glass supporting table 7 by a driving mechanism not shown, so as to form a vertical direction from the head 12 and the glass supporting table 7. Alignment of the board|substrate 2 is performed in the form which sandwiched the chip|tip 4.

Once the alignment of the substrate 2 is completed, the head 12 is lowered by an unillustrated drive mechanism, and the plurality of chips 4 are sandwiched between the head 12 and the glass support table 7 located below the substrate 2 at the same time. At this time, the elastic material 6 sandwiched between the chip 4 and the head 12 is simultaneously lowered by the head 12 to simultaneously cover the plurality of chips 4 arrayed and mounted on the substrate. That is, when the pressure is applied, the elastic material 6 absorbs the variation in the thickness of the chip 4 as shown in FIG. 5 , and applies substantially uniform pressure to each chip 4 .

In this way, the conductive particles 23 located between the pressure piece 21 on the chip 4 side and the substrate electrode 22 are also elastically deformed uniformly, so as to ensure sufficient contact resistance between the two electrodes.

Once the chip 4 is sandwiched between the head 12 and the glass support table 7 , infrared rays are output from the infrared irradiation unit 8 . As shown in FIG. 4 , the infrared rays are reflected by the inner wall of the infrared irradiating portion 8 , are condensed at the opening on the output side, and output to the glass support table 7 .

The output infrared rays are output in a state of being condensed from the opening 16 on the substrate side through the glass support table 7 . The output infrared light (infrared rays) is not only absorbed by the substrate 2 (glass substrate), but also transmitted through the substrate 2 and absorbed by the resin and the chip 4, thereby heating and hardening the resin efficiently. In particular, the temperature of the substrate 2 and the chip 4 themselves that have absorbed infrared rays rises, and the heat is transferred to the resin. In this way, the infrared rays can only irradiate the part on the substrate where the chip 4 is mounted, so that only the mounted part can be heated.

After the irradiation of infrared rays has elapsed for a predetermined time, the irradiation of infrared rays is terminated, and air is supplied from the cooling device 9 to cool the substrate 2 from the back side and/or the upper side.

When the temperature is below the vicinity of the Tg temperature, the pressurization is released, the head 12 is returned to the upper standby position, and the substrate holding table 10 is moved to the substrate delivery position. The substrate 2 moved to the delivery position is conveyed to the substrate storage unit by a substrate conveyance mechanism not shown, and stored in the substrate recovery box.

As above, bonding of the chips 4 to one substrate 2 is completed.

As described above, by sandwiching the elastic material 6 between the plurality of chips 4 and the head 12 and performing thermocompression bonding, the thickness variation of each chip 4 is absorbed by the elastic material 6, and the plurality of chips 4 can be uniformly heated at once. By crimping on the substrate 2, the time for heating and pressing can be shortened, that is, the working efficiency can be improved.

In addition, an opening 16 for outputting infrared rays is provided on the side surface of the substrate, and the infrared rays reflected internally are condensed and output by using the glass support table 7 covered with a metal film 19 and the entire inner wall of the internal space 17 covered with a metal film 19. Infrared irradiating part 8, so that infrared rays can only be irradiated to the part of the substrate 2 where the chip 4 is mounted. In this way, the temperature of the substrate 2 is only raised locally, and the temperature rise of the entire substrate can be avoided.

In addition, infrared rays can be transmitted through the substrate, and the hardening of the resin can be further promoted.

As described above, since the heating time for the substrate 2 can be shortened and the temperature rise of the entire substrate can be avoided, it can be effectively used for substrates such as flat panel display panels with poor thermal stress.

Example device.

Then, after the resin is heated and cured, it is cooled to reach the glass transition point, and the pressure from the head 12 is released to bring the resin into a substantially completely cured state. That is, since the pressurization is released at a low temperature, deformation and deflection due to the difference in thermal expansion between the substrate 2 and the chip 4 can be eliminated. As a result, the substrate on which the chip 4 is mounted can be reliably used.

[Second embodiment]

The device configuration of this embodiment differs from the device of the first embodiment above only around the pressurizing device, and the same symbols are assigned to the same parts, and the different parts will be described.

Fig. 6 is a front view showing the main part structure of the overlapping device in the present invention.

As shown in FIG. 6 , the main pressure-bonding device includes: a movable table 3 that horizontally holds a substrate 2 conveyed from a temporary pressure-bonding unit not shown in the figure; and a pressurizing device 5 that pressurizes a chip 4 from above. ; the elastic material 6 sandwiched between the chip 4 and the pressing device 5 ; the glass support table 7 that sandwiches the chip 4 from the bottom of the substrate 2 together with the pressing device 5 ; the glass support table 7 is heated The heater 50; the infrared ray irradiation unit 8; the air nozzle 51 that supplies air to the substrate 2 from above and below; and the control unit 53 that collectively controls these components.

As shown in FIG. 2 , the movable table 3 has a substrate holding table 10 for sucking and holding the substrate 2, and the substrate holding table 10 is configured to be movable in two horizontal axes (X, Y) directions and vertical (Z) directions. , and around the Z axis (θ) direction.

The head portion 12 of the pressurizing device 5 is provided with, not shown, a heater (for example, a ceramic heater) and a flow path for circulating a cooling medium. That is, when heating and hardening the resin, the head portion 12 is heated by a heater to heat the elastic material 6 . By heating the elastic material 6 by the heater, it is possible to prevent the heat possessed by the chip 4 from absorbing infrared rays from being conducted to the elastic material 6 in contact with the non-overlapping side and causing losses. That is, it is effective for the case where the elastic material 6 has no or poor heat insulating properties.

During cooling after heating with true crimping, the flow path is used for cooling of the head 12 . Specifically, it is arranged above the heater, and circulates a cooling medium such as air and cooling water through the flow path.

The heater 50 is a member for heating the glass support table 7 and using the heat to heat the substrate. As shown in FIG. 6 , the heater 50 is mounted on the side wall of the glass support table 7 at a predetermined distance from the substrate 2 , and its temperature is controlled by a control unit 53 .

The air nozzle 51 provided below the substrate suppresses heat conduction in the vicinity of the contact portion of the glass support 7 and the substrate 2 when the glass support 7 is heated, and supplies air to the back surface of the substrate.

The air nozzle 51 is supplied with air from an air supply source 55 by opening and closing a valve V in accordance with a control signal from a control unit 53 .

The control unit 53 is a member that generally performs adjustment of the temperature of the heater 50 for heating the glass support 7 , adjustment of the air supply of the air nozzle 51 for cooling the substrate 2 and the chip 4 , and the like. In addition, details about the control of each specific unit will be described later.

Next, when the chip is actually crimped on the resin (ACF) part on the substrate using the above-mentioned main crimping device, the method of fixing the chip on the substrate while adjusting the temperature during the cooling process after the resin is heated and hardened Make an explanation. A specific method will be described with reference to the flowchart in FIG. 7 .

<Step S1> Substrate Alignment

The substrate 2 is transported to the main crimping device by a transport mechanism not shown. The substrate 2 is transferred and held by suction on the substrate holding table 10 of the movable table 3 . The substrate holding table 10 is moved forward (Y direction in FIG. 2 ), that is, between the head 12 and the glass support table 7 by a drive mechanism not shown, and is supported by the head 5 and the glass with the elastic material 6 interposed therebetween. The stage 7 aligns the substrate 2 in the form of sandwiching the chip 4 from the up and down direction.

<Step S2> Heating process

The temperature of the resin is raised to, for example, 190° C. or higher, and the irradiation degree (for example, output degree or on/off switching method) and irradiation time of infrared rays IR to the mounting portion are adjusted by the control unit 53 . The set temperature in the case of ACF is preferably in the range of 200 to 220°C. When the set temperature is lower than 190°C, the hardening acceleration of the resin is impaired, and if it exceeds 220°C, or even 240°C or higher, there is a problem in the heat resistance of the resin.

At this time, air is supplied from the air nozzle 51 to the back surface of the substrate to cool the area other than the chip mounting portion. That is, it is suitable for a glass substrate having a polarizing film having poor heat resistance.

<Step S3> Cooling starts

Once the heating process is over, cooling is started so that the resin temperature reaches the Tg temperature. Specifically, cooling is performed in the following order.

First, a valve (not shown) is opened in response to a heating OFF signal from the control unit 53 to start supplying air into the head. With the supply of this air, the heater inside the head is cooled. At this time, the resin can be efficiently cooled by cooling in the air-opened state and heat transfer caused by the rapid cooling of the head portion 12 .

Once it reaches the vicinity of the Tg temperature corresponding to each resin, for example, in the case of ACF, when it reaches the Tg temperature + 20°C, the cooling of the head 12 is stopped, and the control unit 53 opens the valve V to release the heat from the air nozzle 51 below the substrate. The temperature of the heater 50 is adjusted while supplying air to the chip 4 .

As a method of setting the time and conditions of these temperature adjustments, the conditions are set while measuring the respective temperatures of the chip 4 , the substrate 2 , and the resin through experiments in advance.

<Step S4> Release the pressurization

Once the cooling temperature reaches the Tg temperature, the pressurization of the chip by the head 12 is released, and the head 12 is returned to the upper standby position.

<Step S5> Take out the substrate

Once the pressure of the head 12 is released, the substrate holding table 10 is moved to the substrate delivery position. The substrate 2 moved to the delivery position is transported to the substrate storage unit by a substrate transport mechanism not shown, and stored in the substrate recovery box.

As above, the actual pressure-bonding of the chips 4 on one substrate 2 is completed.

The present invention is not limited to the above-described embodiments, and may be implemented in the following modifications.

(1) In the above-described embodiment, the entire inner wall surface of the inner space of the infrared irradiating part is covered with a metal film, but a part of the inner wall surface may be covered with a metal film. For example, only the lower half of Fig. 4 may be covered with a metal film.

In addition, the infrared irradiating portion may be configured to be vertically divisible, thereby improving maintainability.

(2) In the above-mentioned embodiment, aluminum is vapor-deposited on the inclined portion 15 of the glass support table 7, but aluminum may not be used, for example, gold, copper, chromium, etc. may be vapor-deposited instead.

By using the heat-absorbing plate glass together, the temperature of the metal portion rises with the irradiation of infrared rays, and the temperature of the glass support base 7 itself also rises, so that the glass support base 7 can be used as a heater. That is, the temperature of the glass support table 7 rises, and the heat is directly transferred to the substrate 2 from the front end portion in contact with the substrate 2 .

Thus, when the resin is cured, the chip 4 and the resin are heated by the irradiation of infrared rays, and the substrate 2 is also heated simultaneously, so that the chip 4 and the substrate 2 are raised to substantially the same temperature. In this state, the resin is heated, the chip 4 is mounted on the substrate 2, and then the chip 4 and the substrate 2 are cooled at the same time to reach a temperature near Tg where the chip 4 is completely hardened. The deflection caused by the difference in thermal expansion coefficient can securely bond the chip 4 to the substrate 2 .

Especially when a glass substrate such as a flat panel display panel is used, since the thermal expansion coefficient of the chip 4 and the glass substrate is approximately equal to 3 ppm, the occurrence of warping can be further alleviated by simultaneously heating and cooling the chip 4 and the glass substrate. .

Also, from the viewpoint that infrared rays pass through the glass substrate so that heat is not easily accumulated, it is preferable to directly transfer the heat from the glass support table 7 to the glass substrate.

Also, when the chip 4 is mounted on a flat panel display panel, it is preferable not to apply thermal stress to the entire substrate. In this way, when using the glass support table 7 as a heater, it is preferable to blow air to the inclined portion 15 of the glass support table 7 so that the radiant heat from the metal film does not reach the substrate 2, but is supported from the glass contacting the substrate. The front end of stage 7 transfers heat locally.

The present invention can be implemented in other specific forms without departing from its idea or essence. Therefore, the scope of the invention should not be limited to the above description, and the appended claims should be referred to.

Claims (14)

1. A lap joint method, resin is sandwiched between the mounting member and the substrate, and the installation of the mounting member is carried out on the substrate, it is characterized in that the method comprises the following processes: A pressurization process in which the elastic material is sandwiched between the plurality of mounting members on the substrate and the pressurizing device, and the plurality of mounting members are simultaneously pressurized by the pressing device and the supporting member supporting the substrate. ;as well as A heating process in which the resin in the pressurized state is irradiated with infrared rays to heat harden. 2. The bonding method according to claim 1, wherein the resin is a resin mixed with conductive particles. 3. The bonding method according to claim 1, wherein the substrate is a flat display panel. 4. The bonding method according to claim 1, further comprising the steps of: after the resin is heated and hardened, it is cooled to below the glass transition point, and then the pressure of the mounting member is released. cooling process. 5. The bonding method according to claim 1, characterized in that, during the heating process, the supporting member is heated simultaneously. 6. The bonding method according to claim 1, wherein the elastic body is a member having heat insulation. 7. A lapping device, resin is clamped between the mounting member and the substrate, and the installation of the mounting member is carried out on the substrate, it is characterized in that the device includes the following elements: placing and holding a holding table for holding the substrate; a single pressurizing device that simultaneously pressurizes a plurality of mounting members on the placed substrate; an elastic material sandwiched between the mounting members and the pressing means when the plurality of mounting members are pressurized; a support member supporting the mounting portion of the mounting member of the substrate from below; and a heating device for irradiating infrared rays from below the substrate to heat and harden the resin. 8. The bonding device according to claim 7, wherein the support member is a glass support platform, so that the infrared rays output from the heating device pass through the glass support platform, and only the chip part mounted on the substrate is processed. In the form of the output portion of the irradiation, the glass support table was covered with a metal film except for a part of the side surface of the substrate. 9. The bonding device according to claim 8, wherein the glass support table is covered with a metal film, and the glass support table is heated while being irradiated with infrared rays. 10. The overlapping device according to claim 9, characterized in that, the metal film covering the glass support table is any one of aluminum, gold, copper and chromium. 11. The splicing device according to claim 8, further comprising the following elements: a heater for heating the glass support table. 12. The lapping device as claimed in claim 7, characterized in that, the heating device has an ellipsoidal space covered by a metal film inside, reflects the emitted infrared rays to the metal film, and outputs after focusing . 13. The bonding device according to claim 7, further comprising the following element: a cooling device for cooling the heat-hardened resin to below the vicinity of the glass transition point. 14. The bonding device according to claim 7, further comprising the following element: an air nozzle for blowing air to the back side of the substrate.

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