CN1607460A - High-resolution mask plate of polarizing film - Google Patents
High-resolution mask plate of polarizing film Download PDFInfo
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- CN1607460A CN1607460A CN 200310100172 CN200310100172A CN1607460A CN 1607460 A CN1607460 A CN 1607460A CN 200310100172 CN200310100172 CN 200310100172 CN 200310100172 A CN200310100172 A CN 200310100172A CN 1607460 A CN1607460 A CN 1607460A
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- 230000005540 biological transmission Effects 0.000 claims abstract description 80
- 238000003384 imaging method Methods 0.000 claims abstract description 68
- 238000000576 coating method Methods 0.000 claims description 64
- 239000011248 coating agent Substances 0.000 claims description 62
- 230000010287 polarization Effects 0.000 claims description 56
- 230000010363 phase shift Effects 0.000 claims description 34
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 abstract description 7
- 238000001459 lithography Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000005457 optimization Methods 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 description 29
- 238000010586 diagram Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 230000004304 visual acuity Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
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Abstract
偏振膜高分辨力掩模板，属于对投影光学光刻系统中掩模板结构的进一步优化改进，其特征是根据掩模板上的特征图形，在掩模上相应的区域覆盖一层偏振膜，偏振膜将使不透光区域相邻的透光区域上透过偏振方向相互垂直的线偏振成像光束(或旋向相反的圆偏振成像光束、旋向相反且长轴相互垂直的椭圆偏振成像光束)，将产生偏振光的偏振膜和传统掩模板结合为一体结构，使掩模板本身具有输出偏振光的功能，增加掩模图形的基本周期，能降低成像光束的衍射角，减邻近效应，提高光刻分辨力，而投影光刻设备不需作任何改动，用于深亚微米和100纳米级的投影光刻。
The polarizing film high-resolution mask plate belongs to the further optimization and improvement of the mask plate structure in the projection optical lithography system. It is characterized in that according to the characteristic pattern on the mask plate, a layer of polarizing film is covered on the corresponding area of the mask. The polarizing film Linearly polarized imaging beams (or circularly polarized imaging beams with opposite rotations, and elliptically polarized imaging beams with opposite rotations and long axes perpendicular to each other) are transmitted through the light transmission area adjacent to the opaque area, The polarizing film that produces polarized light and the traditional mask are combined into one structure, so that the mask itself has the function of outputting polarized light, increasing the basic period of the mask pattern, reducing the diffraction angle of the imaging beam, reducing the proximity effect, and improving photolithography. resolution, and the projection lithography equipment does not need to make any changes, and is used for deep submicron and 100 nanometer level projection lithography.
Description
Affiliated technical field
The present invention is a kind of novel polarizing coating high resolution mask plate, and the further optimization that belongs to mask plate structure in the projection optics etching system improves.
Background technology
Traditional mask plate structure synoptic diagram as shown in Figure 1, transmission region 8 and light tight regional 9 interlaced arrangements form mask graph, its corresponding mask amplitude transmittance is shown in Fig. 1 c.
In order to improve the projection optics photolithography resolution, designed the phase shift layer that the imaging beam phase place is changed in the specific region of mask plate printing opacity in recent years, the kind of this phase shifting mask is a lot.Shown in Figure 2 is exactly a kind of phase shifting mask plate structure synoptic diagram.There is a phase shift layer at 11 places at transmission region, and the phase place that sees through the imaging beam of light tight regional 9 adjacent transmission regions 10,11 will have the variation of 180 degree.Fig. 2 c has represented the amplitude transmittance of this phase shifting mask, and the amplitude of the imaging beam by transmission region 10 and transmission region 11 is positive and negative opposite.
But, along with modern microelectric technique develops to high integration ultra micro refinement direction, improve constantly the photolithography resolution level that the projection lithography equipment of making Micropicture can reach, become the key problem that modern lithographic technologies is badly in need of solution.The phase shifting mask The Application of Technology has improved resolving power to a certain extent, but along with the minimizing of photoetching lines basic cycle, phase shifting mask just can not guarantee high-quality imaging; And the design of optimal phase shift device, position to place difficulty big, the manufacturing cost height, above-mentioned deficiency is difficult to satisfy the demand.
Summary of the invention
The technical issues that need to address of the present invention are: the deficiency that overcomes above-mentioned technology, utilize the amplitude of imaging beam and the 3rd information one polarization beyond the phase place, and a kind of novel polarizing coating high resolution mask plate that traditional masks and polarizing coating are combined as a whole is provided, realize high degree of resolution.
Technical solution of the present invention is: according to the feature pattern on the mask, cover one deck polarizing coating on the respective regions on the mask plate.
Described polarizing coating is the polarizing coating that can produce linear polarization, and satisfy on the adjacent transmission region in light tight zone through the orthogonal linear polarization imaging beam in polarization direction, the polarization direction parallel lines is with spaced perpendicular to lines, be that the polarization direction is for line edge, a kind of is the polarization imaging light beam that is parallel to lines, and another kind is the polarization imaging light beam of vertical bar.
Described polarizing coating still can produce circularly polarized polarizing coating, and satisfies on the adjacent transmission region in light tight zone and to see through the opposite circular polarization imaging beam of rotation direction, and promptly a kind of is the circular polarization imaging beam of dextrorotation, and another kind is left-handed circular polarization imaging beam.
Described polarizing coating still can produce the polarizing coating of elliptic polarization, and satisfy on the adjacent transmission region in light tight zone the imaging beam that sees through the opposite and orthogonal elliptic polarization of major axis of rotation direction, be a kind of be the elliptic polarization imaging beam that dextrorotation, major axis are parallel to lines, another kind is left-handed, the major axis elliptic polarization imaging beam perpendicular to lines.
The zone separately of the various polarizing coatings that cover on the aforementioned mask plate has also processed the phase shift layer that the transmission-polarizing light phase is changed.
The present invention compared with prior art has the following advantages:
1, will produce the polarizing coating of polarized light and the traditional masks structure that is integrated that hardens, make mask plate itself have the function of output polarization light, increase the basic cycle of mask graph, can reduce the angle of diffraction of imaging beam, reduce proximity effect, improve photolithography resolution, and projection lithography equipment need not done any change.
2, novel polarizing coating high resolution mask plate structure is simple, and the design of various polarizing coatings is decided with mask graph, and is easy to make.
3, novel polarizing coating high score resolving power mask plate utilizes the polarization characteristic of imaging beam, improves the imaging resolving power by the period L that enlarges mask graph.
4, in the superfine graph photoetching in deep sub-micron range, can use the novel polarizing coating high resolution of the present invention mask plate, improve resolving power, in contact, proximity photoetching, use and also can improve photolithography resolution.
Description of drawings
Fig. 1 a, Fig. 1 b are overlooking of traditional masks plate and main TV structure synoptic diagram, and Fig. 1 c is a traditional masks plate amplitude transmittance;
Fig. 2 a, Fig. 2 b are the overlooking and main TV structure synoptic diagram of phase shifting mask plate in the prior art, and Fig. 2 c is the mask plate amplitude transmittance;
Fig. 3 a, Fig. 3 b are that the embodiment of the invention 1 mask plate is overlooked and main TV structure synoptic diagram, and Fig. 3 c, Fig. 3 d are this mask plate amplitude transmittances;
Fig. 4 a, Fig. 4 b are that the embodiment of the invention 2 mask plates are overlooked and main TV structure synoptic diagram, and Fig. 4 c, Fig. 4 d are this mask plate amplitude transmittances;
Fig. 5 a, Fig. 5 b are that the embodiment of the invention 3 mask plates are overlooked and main TV structure synoptic diagram, and Fig. 5 c, Fig. 5 d are this mask plate amplitude transmittances;
Fig. 6 a, Fig. 6 b are that the embodiment of the invention 4 mask plates are overlooked and main TV structure synoptic diagram, and Fig. 6 c, Fig. 6 d are this mask plate amplitude transmittances;
Fig. 7 a, Fig. 7 b are that the embodiment of the invention 5 mask plates are overlooked and main TV structure synoptic diagram, and Fig. 7 c, Fig. 7 d are this mask plate amplitude transmittances;
Fig. 8 a, Fig. 8 b are that the embodiment of the invention 6 mask plates are overlooked and main TV structure synoptic diagram, and Fig. 8 c, Fig. 8 d are this mask plate amplitude transmittances;
Fig. 9 is that the present invention is applied to projection optics etching system structural representation.
Embodiment
Following the present invention will be described in further detail in conjunction with the accompanying drawings:
Be depicted as the traditional masks plate as Fig. 1 a, 1b and 1c.Transmission region 8 and light tight regional 9 interlaced arrangements form mask graph, and its corresponding mask amplitude transmittance is shown in Fig. 1 c; Than higher, and in light tight regional 9 very low (amplitude transmittance=0), the basic cycle L of mask graph has been formed in then adjacent pair of light-transmissive zone 8 and light tight regional 9 to amplitude transmittance at transmission region 8
1
As Fig. 2 a, 2b is phase shifting mask plate structure synoptic diagram.There is a phase shift layer at 11 places at transmission region, the imaging beam phase place of the adjacent transmission region 10,11 through light tight regional 9 will have the variations of 180 degree, Fig. 2 c has represented the amplitude transmittance of this phase shifting mask, the amplitude of the imaging beam by transmission region 10 and transmission region 11 is positive and negative opposite, has been made of the basic cycle L of this phase shifting mask figure the light tight regional 9-transmission region 11-light tight regional 9 of transmission region 10-
2
In wave optics, the basic cycle of mask graph is L, and angle of diffraction θ is being full of Lsin θ=n λ ... occur in the direction (1), λ represents exposure wavelength here, and n represents the progression of diffracted beam.Can obtain from (1) formula: period L is big more, and angle of diffraction θ is more little.Compare in conjunction with foregoing mask plate (as shown in Figure 1, as shown in Figure 2), on phase shifting mask (as shown in Figure 2), the basic cycle L of mask graph
2Be the basic cycle L of traditional masks plate (as shown in Figure 1)
12 times big.Therefore the angle of diffraction of phase shifting mask plate generation diffracted beam as shown in Figure 2 is little such as mask plate shown in Figure 1, big phase shifting mask plate of mask graph basic cycle can make the diffracted beam of higher progression be projected optical lithography system and project to the silicon chip surface imaging, so can obtain higher resolving power.
As shown in Figure 3: be polarizing coating high resolution mask plate embodiment 1 of the present invention, at light tight regional 9 adjacent transmission regions 12 and 13, covered the polarizing coating that one deck can make the orthogonal quadrature in polarization direction of imaging beam, in Fig. 3, represent polarization direction by light beam with the direction of arrow, imaging beam by transmission region 12 is called the S polarized light, and the imaging beam by transmission region 13 is called the P polarized light.
For the S polarized light, though transmission region 12 can former state pass through, transmission region 13 can not pass through; Transmission region 13 is lighttight for the S polarized light.For this reason, investigate the amplitude transmittance of mask graph shown in Figure 3 with the S polarized light, shown in Fig. 3 c.The basic cycle of having formed this mask graph by the light tight regional 9-transmission region 13-light tight regional 9 of transmission region 12-is L
3
Equally, for the P polarized light, transmission region 13 can pass through, but transmission region 12 is lighttight for the p polarized light.For this reason, investigate the amplitude transmittance of mask graph shown in Figure 3 with the P polarized light, shown in Fig. 3 d.The basic cycle of having formed this mask graph by the light tight regional 9-transmission region 12-light tight regional 9 of transmission region 13-also is L
3
As seen from the above analysis, the basic cycle L of mask graph shown in Figure 3
3Be traditional masks figure basic cycle L
12 times.Even the numerical aperture of projection optics etching system (NA) is equally big like this, the mask plate that has covered polarizing coating obtains the more imaging of high resolution than traditional masks plate.
As shown in Figure 4, polarizing coating high resolution mask plate embodiment 2 of the present invention, covered the polarizing coating that one deck can make the orthogonal quadrature in polarization direction of imaging beam in the adjacent transmission region 14,15,16 and 17 light tight regional 9, in Fig. 4, represent polarization direction by light beam with the direction of arrow, imaging beam by transmission region 14 and 16 is called the S polarized light, and the imaging beam by transmission region 15 and 17 is called the P polarized light.And in the present embodiment, transmission region 16 and 17 affixs adjacent in light tight zone make the imaging beam phase place produce the phase shift layer that 180 degree change.
At first, for the S polarized light, can only pass through transmission region 14 and 16, transmission region 15 and 17 pairs of S polarized lights are lighttight, the polarizing coating high resolution mask amplitude transmittance of Gou Chenging has been formed the basic cycle L of mask graph by transmission region 14 (not having phase shift layer)-light tight regional 9-transmission region 15 (not having phase shift layer)-light tight regional 9-transmission region 16 (phase shift layer is arranged)-light tight regional 9-transmission region 17 (phase shift layer is arranged)-light tight regional 9 shown in Fig. 4 c like this
4
And for the P polarized light, can only be by zone, transmittance section 15 and 17, transmission region 14 and 16 pairs of P polarized lights are lighttight, the novel polarizing coating high resolution mask amplitude transmittance of Gou Chenging is shown in Fig. 4 d like this, by transmission region 15 (not having phase shift layer)-light tight regional 9-transmission region 16 (phase shift layer is arranged)-light tight regional 9-transmission region 17 (phase shift layer is arranged)-light tight regional 9-transmission region 14 (not having phase shift layer)-light tight regional 9 basic cycle of having formed mask graph also be L
4
Compare the basic cycle L of mask graph with aforementioned traditional masks plate as shown in Figure 1
4To become L
14 times, compare the basic cycle L of mask graph with aforementioned phase shifting mask plate as shown in Figure 2
4To become L
22 times, if therefore use polarizing coating high resolution mask plate shown in Figure 4, even use the projection optics etching system of same numerical aperture, with traditional masks plate shown in Figure 1 and phase shifting mask plate comparison shown in Figure 2, polarizing coating high resolution mask plate shown in Figure 4 just can obtain the more imaging of high resolution.
Polarizing coating among the invention described above embodiment 1 and 2 is the polarizing coating that can produce linear polarization, and satisfy on the adjacent transmission region in light tight zone through the orthogonal linear polarization imaging beam in polarization direction, the polarization direction parallel lines is with spaced perpendicular to lines, be that the polarization direction is for line edge, a kind of is the polarization imaging light beam that is parallel to lines, and another kind is the polarization imaging light beam of vertical bar.
As shown in Figure 5: be polarizing coating high resolution mask plate embodiment 3 of the present invention, at light tight regional 9 adjacent transmission regions 18 and 19, covered the rotation direction opposite circular polarization film that one deck can make imaging beam, in Fig. 5, represent rotation direction by light beam with the direction of arrow, imaging beam by transmission region 18 is called right-circularly polarized light, and the imaging beam by transmission region 19 is called left circularly polarized light.
For right-circularly polarized light, though transmission region 18 can former state pass through, transmission region 19 can not pass through; Transmission region 19 is lighttight for right-circularly polarized light.For this reason, investigate the amplitude transmittance of mask graph shown in Figure 5 with right-circularly polarized light, shown in Fig. 5 c.The basic cycle of having formed this mask graph by the light tight regional 9-transmission region 19-light tight regional 9 of transmission region 18-is L
5
Equally, for left circularly polarized light, transmission region 19 can pass through, but transmission region 18 is lighttight for left circularly polarized light.For this reason, investigate the amplitude transmittance of mask graph shown in Figure 5 with left circularly polarized light, shown in Fig. 5 d.The basic cycle of having formed this mask graph by the light tight regional 9-transmission region 18-light tight regional 9 of transmission region 19-also is L
5
As seen from the above analysis, the basic cycle L of mask graph shown in Figure 5
5Be traditional masks figure basic cycle L
12 times.Even the numerical aperture of projection optics etching system (NA) is equally big like this, the mask plate that has covered polarizing coating obtains the more imaging of high resolution than traditional masks plate.
As shown in Figure 6, polarizing coating high resolution mask plate embodiment 4 of the present invention, covered the opposite circular polarization film of rotation direction that one deck can make imaging beam in the adjacent transmission region 20,21,22 and 23 light tight regional 9, in Fig. 6, represent rotation direction by light beam with the direction of arrow, imaging beam by transmission region 20 and 22 is called right-circularly polarized light, and the imaging beam by transmission region 21 and 23 is called left circularly polarized light.And in the present embodiment, transmission region 22 and 23 affixs adjacent in light tight zone make the imaging beam phase place produce the phase shift layer that 180 degree change.
At first, for right-circularly polarized light, can only pass through transmission region 20 and 22, transmission region 21 and 23 pairs of right-circularly polarized lights are lighttight, the polarizing coating high resolution mask amplitude transmittance of Gou Chenging has been formed the basic cycle L of mask graph by transmission region 20 (not having phase shift layer)-light tight regional 9-transmission region 21 (not having phase shift layer)-light tight regional 9-transmission region 22 (phase shift layer is arranged)-light tight regional 9-transmission region 23 (phase shift layer is arranged)-light tight regional 9 shown in Fig. 6 c like this
6
And for left circularly polarized light, can only be by zone, transmittance section 21 and 23, transmission region 20 and 22 pairs of left circularly polarized lights are lighttight, the novel polarizing coating high resolution mask amplitude transmittance of Gou Chenging is shown in Fig. 6 d like this, by transmission region 21 (not having phase shift layer)-light tight regional 9-transmission region 22 (phase shift layer is arranged)-light tight regional 9-transmission region 23 (phase shift layer is arranged)-light tight regional 9-transmission region 20 (not having phase shift layer)-light tight regional 9 basic cycle of having formed mask graph also be L
6
Compare the basic cycle L of mask graph with aforementioned traditional masks plate as shown in Figure 1
6To become L
14 times, compare the basic cycle L of mask graph with aforementioned phase shifting mask plate as shown in Figure 2
6To become L
22 times, if therefore use polarizing coating high resolution mask plate shown in Figure 6, even use the projection optics etching system of same numerical aperture, with traditional masks plate shown in Figure 1 and phase shifting mask plate comparison shown in Figure 2, polarizing coating high resolution mask plate shown in Figure 6 just can obtain the more imaging of high resolution.
Polarizing coating among the invention described above embodiment 3 and 4 still can produce circularly polarized polarizing coating, and satisfy on the adjacent transmission region in light tight zone through the opposite circular polarization imaging beam of rotation direction, be a kind of be the circular polarization imaging beam of dextrorotation, another kind is left-handed circular polarization imaging beam.
As shown in Figure 7: be polarizing coating high resolution mask plate embodiment 5 of the present invention, at light tight regional 9 adjacent transmission regions 24 and 25, covered the rotation direction opposite and orthogonal elliptic polarization film of major axis that one deck can make imaging beam, in Fig. 7, represent rotation direction and long axis direction by light beam with the direction of arrow, imaging beam by transmission region 24 is called the right-handed elliptical polarization light that major axis is parallel to lines, and the imaging beam by transmission region 25 is called the left-handed elliptically polarized light of major axis perpendicular to lines.
For right-handed elliptical polarization light, though transmission region 24 can former state pass through, transmission region 25 can not pass through; Transmission region 25 is lighttight for right-handed elliptical polarization light.For this reason, investigate the amplitude transmittance of mask graph shown in Figure 7 with right-handed elliptical polarization light, shown in Fig. 7 c.The basic cycle of having formed this mask graph by the light tight regional 9-transmission region 25-light tight regional 9 of transmission region 24-is L
7
Equally, for left-handed elliptically polarized light, transmission region 25 can pass through, but transmission region 24 is lighttight for left-handed elliptically polarized light.For this reason, investigate the amplitude transmittance of mask graph shown in Figure 7 with left-handed elliptically polarized light, shown in Fig. 7 d.The basic cycle of having formed this mask graph by the light tight regional 9-transmission region 24-light tight regional 9 of transmission region 25-also is L
7
As seen from the above analysis, the basic cycle L of mask graph shown in Figure 7
7Be traditional masks figure basic cycle L
12 times.Even the numerical aperture of projection optics etching system (NA) is equally big like this, the mask plate that has covered polarizing coating obtains the more imaging of high resolution than traditional masks plate.
As shown in Figure 8, polarizing coating high resolution mask plate embodiment 6 of the present invention, covered the rotation direction opposite and orthogonal elliptic polarization film of major axis that one deck can make imaging beam in the adjacent transmission region 26,27,28 and 29 light tight regional 9, in Fig. 8, represent rotation direction by light beam with the direction of arrow, imaging beam by transmission region 26 and 28 is called right-handed elliptical polarization light, and the imaging beam by transmission region 27 and 29 is called left-handed elliptically polarized light.And in the present embodiment, transmission region 28 and 29 affixs adjacent in light tight zone make the imaging beam phase place produce the phase shift layer that 180 degree change.
At first, for right-handed elliptical polarization light, can only pass through transmission region 26 and 28, transmission region 27 and 29 pairs of right-handed elliptical polarization light are lighttight, the polarizing coating high resolution mask amplitude transmittance of Gou Chenging has been formed the basic cycle L of mask graph by transmission region 26 (not having phase shift layer)-light tight regional 9-transmission region 27 (not having phase shift layer)-light tight regional 9-transmission region 28 (phase shift layer is arranged)-light tight regional 9-transmission region 29 (phase shift layer is arranged)-light tight regional 9 shown in Fig. 8 c like this
8
And for left-handed elliptically polarized light, can only be by zone, transmittance section 27 and 29, transmission region 26 and 28 pairs of left-handed elliptically polarized lights are lighttight, the novel polarizing coating high resolution mask amplitude transmittance of Gou Chenging is shown in Fig. 8 d like this, by transmission region 27 (not having phase shift layer)-light tight regional 9-transmission region 28 (phase shift layer is arranged)-light tight regional 9-transmission region 29 (phase shift layer is arranged)-light tight regional 9-transmission region 26 (not having phase shift layer)-light tight regional 9 basic cycle of having formed mask graph also be L
8
Compare the basic cycle L of mask graph with aforementioned traditional masks plate as shown in Figure 1
8To become L
14 times, compare the basic cycle L of mask graph with aforementioned phase shifting mask plate as shown in Figure 2
8To become L
22 times, if therefore use polarizing coating high resolution mask plate shown in Figure 8, even use the projection optics etching system of same numerical aperture, with traditional masks plate shown in Figure 1 and phase shifting mask plate comparison shown in Figure 2, polarizing coating high resolution mask plate shown in Figure 8 just can obtain the more imaging of high resolution.
Polarizing coating in the embodiment of the invention 5 and 6 is the polarizing coating that can produce elliptic polarization, and satisfy on the adjacent transmission region in light tight zone the imaging beam that sees through the vertical mutually and elliptic polarization that rotation direction is opposite of major axis, the long axis of ellipse parallel lines is with spaced perpendicular to lines, promptly concerning long axis of ellipse for the line edge, a kind of is the elliptic polarization imaging beam that is parallel to lines, and another kind is the elliptic polarization imaging beam of vertical bar.
As shown in Figure 9: be the structural representation that the novel polarizing coating high resolution of the present invention mask plate is applied to the projection optics etching system, the illumination light that lighting source 2 sends is through ellipsoidal mirror 1 and lamp optical system 3, be radiated on the polarizing coating high resolution mask plate 4, illumination light produces not at the same level time diffraction, polarizing coating on mask plate 4 is according to the imaging beam of different feature pattern generation different polarization directions, and imaging beam is collected also projection imaging on silicon chip 6 by light projection photoetching objective lens 5.The polarizing coating high resolution mask plate 4 of the present invention that the projection optics etching system is used, because the corresponding transmission region at mask plate has covered one deck polarizing coating and phase shift layer, make the polarization direction of the imaging beam that sees through mask plate vertical mutually, the mutually perpendicular imaging beam in polarization direction does not produce interference, so proximity effect is little, can further improve definition.
Claims (5)
1, polarizing coating high resolution mask plate has the feature pattern that needs photoetching on the mask plate, it is characterized in that: according to the feature pattern on the mask, cover one deck polarizing coating on the respective regions on the mask plate.
2, polarizing coating high resolution mask plate according to claim 1, it is characterized in that: described polarizing coating is the polarizing coating that can produce linear polarization, and satisfy on the adjacent transmission region in light tight zone and to see through the orthogonal linear polarization imaging beam in polarization direction, the polarization direction parallel lines is with spaced perpendicular to lines.
3, polarizing coating high resolution mask plate according to claim 1 is characterized in that: described polarizing coating is to produce circularly polarized polarizing coating, and satisfies on the adjacent transmission region in light tight zone through the opposite circular polarization imaging beam of rotation direction.
4, polarizing coating high resolution mask plate according to claim 1, it is characterized in that: described polarizing coating is the polarizing coating that can produce elliptic polarization, and satisfies on the adjacent transmission region in light tight zone the imaging beam that sees through the opposite and orthogonal elliptic polarization of major axis of rotation direction.
5, according to claim 1,2,3,4 described polarizing coating high resolution mask plates, it is characterized in that: the zone separately that covers polarizing coating on mask plate also is added with the phase shift layer that the transmission-polarizing light phase is changed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310100172 CN1607460A (en) | 2003-10-15 | 2003-10-15 | High-resolution mask plate of polarizing film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310100172 CN1607460A (en) | 2003-10-15 | 2003-10-15 | High-resolution mask plate of polarizing film |
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| Publication Number | Publication Date |
|---|---|
| CN1607460A true CN1607460A (en) | 2005-04-20 |
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|---|---|---|---|
| CN 200310100172 Pending CN1607460A (en) | 2003-10-15 | 2003-10-15 | High-resolution mask plate of polarizing film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102096334A (en) * | 2010-12-22 | 2011-06-15 | 中国科学院光电技术研究所 | Phase-shifting principle-based super-diffraction imaging device for improving resolution and manufacturing method thereof |
| CN101539664B (en) * | 2008-03-17 | 2011-10-19 | 索尼株式会社 | Irradiation optical system, irradiation apparatus and fabrication method for semiconductor device |
| CN103472671A (en) * | 2012-06-05 | 2013-12-25 | 南亚科技股份有限公司 | Photomask with composite polarizer and imaging method for optimizing different patterns |
-
2003
- 2003-10-15 CN CN 200310100172 patent/CN1607460A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101539664B (en) * | 2008-03-17 | 2011-10-19 | 索尼株式会社 | Irradiation optical system, irradiation apparatus and fabrication method for semiconductor device |
| CN102096334A (en) * | 2010-12-22 | 2011-06-15 | 中国科学院光电技术研究所 | Phase-shifting principle-based super-diffraction imaging device for improving resolution and manufacturing method thereof |
| CN102096334B (en) * | 2010-12-22 | 2012-08-08 | 中国科学院光电技术研究所 | Phase-shifting principle-based super-diffraction imaging device for improving resolution and manufacturing method thereof |
| CN103472671A (en) * | 2012-06-05 | 2013-12-25 | 南亚科技股份有限公司 | Photomask with composite polarizer and imaging method for optimizing different patterns |
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