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CN1697595A - Ball Grid Array Package Substrate Structure - Google Patents

Ball Grid Array Package Substrate Structure Download PDF

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Publication number
CN1697595A
CN1697595A CN 200510077878 CN200510077878A CN1697595A CN 1697595 A CN1697595 A CN 1697595A CN 200510077878 CN200510077878 CN 200510077878 CN 200510077878 A CN200510077878 A CN 200510077878A CN 1697595 A CN1697595 A CN 1697595A
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holes
hole
chip
ball grid
array
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CN100350819C (en
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陈俊宏
彭伊新
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Via Technologies Inc
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Via Technologies Inc
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Abstract

A through hole configuration method for chip connection region on signal layer of ball grid array package substrate comprises: a metal ball grid pad array composed of a plurality of metal ball grid pads; and a through hole array composed of a plurality of through holes and arranged in a staggered way with the metal ball grid array. Wherein, the outermost periphery of the through hole array comprises at least two through hole rings for transmitting signals or connecting power supply to the chip. And two adjacent through holes on each through hole ring are separated by the distance of at least two metal ball grid pads. Therefore, the corresponding grounding layer is provided with a plurality of heat dissipation channels, so that heat energy generated during the operation of the semiconductor chip can be quickly conducted out through the heat dissipation channels, and the transmission of signal quality and power quality is facilitated.

Description

球栅阵列封装基板结构Ball Grid Array Package Substrate Structure

技术领域technical field

本发明涉及一球栅阵列封装基板,尤指一种具有散热规划的球栅阵列封装基板。The invention relates to a ball grid array packaging substrate, especially a ball grid array packaging substrate with heat dissipation planning.

背景技术Background technique

半导体封装件种类繁多,球栅阵列(Ball Grid Array,BGA)半导体封装件的问世,配合现今半导体芯片高度密集化需求下,得以提供高密度的电子元件(Electronic Components)与电子电路(Electronic Circuits)充分数量的输入/输出连接端(I/O Connections),现已成为封装产品的主流。由于工艺技术不断演进,BGA半导体封装件上用以连结输入/输出连结端呈矩阵方式排列的焊球数量及密度均大幅提高,典型的BGA半导体封装件上常达到数百万个有源及无源元件。There are various types of semiconductor packages, and the advent of Ball Grid Array (BGA) semiconductor packages can provide high-density electronic components (Electronic Components) and electronic circuits (Electronic Circuits) A sufficient number of input/output connections (I/O Connections) has become the mainstream of packaged products. Due to the continuous evolution of process technology, the number and density of solder balls arranged in a matrix to connect input/output terminals on BGA semiconductor packages have been greatly increased. Typical BGA semiconductor packages often have millions of active and passive components. source element.

然而,伴随半导体集成电路所制成的芯片功能持续成长,在单位面积内元件密集度急速增加,为了容纳更多元件,可以想见线宽必不断缩小,将导致阻抗值升高运作时所产生热量就相当可观了,如无法有效释除芯片运作产生的热能将明显影响半导体芯片的可靠性及使用寿命。However, as the functions of chips made by semiconductor integrated circuits continue to grow, the density of components per unit area increases rapidly. In order to accommodate more components, it is conceivable that the line width must continue to shrink, which will lead to an increase in impedance. Heat generated during operation It is quite considerable, if the heat energy generated by the operation of the chip cannot be effectively released, the reliability and service life of the semiconductor chip will be significantly affected.

现有技术的球栅阵列封装基板如图1所示,为减少信号传输时彼此干扰,通常多层板的各导体图案层设计也会将有关信号层(signal plane layer)2和接地层(ground plane layer)4及电源层(power plane layer)6分开,导体图案层或称导线层之间则以绝缘层材料8、10,例如玻璃纤维、FR4、环氧树脂等隔离,信号层中包含一芯片接置区14(如图2所示)以提供该球栅阵列封装芯片接置。The ball grid array package substrate of the prior art is shown in Figure 1. In order to reduce mutual interference during signal transmission, usually the design of each conductor pattern layer of the multilayer board also integrates the relevant signal layer (signal plane layer) 2 and ground layer (ground layer) plane layer) 4 and power plane layer (power plane layer) 6 are separated, and the conductor pattern layer or wire layer is separated by insulating layer materials 8 and 10, such as glass fiber, FR4, epoxy resin, etc., and the signal layer contains a The chip landing area 14 (shown in FIG. 2 ) is used to provide the ball grid array package chip landing.

一般而言,芯片接置区14中的贯穿孔,呈阵列式排列。请参阅图2所示,图2为球栅阵列封装基板接地层的布局图。在基板布线设计中会将芯片接置区14所在至少最外一圈的贯穿孔主要设计成传递信号及连接电源之用,不与接地层相连,而芯片接置区14内部则是作为电源或接地的信号连接,其将形成在基板接地层中于芯片接置区14周围环绕的最外一圈贯穿孔皆须制成弃孔12(电性不连接),由于贯穿孔在做绝缘时的处理过程中,在蚀刻贯穿孔周围的铜箔时会有些许误差存在,在现今贯穿孔过于密集排列情形中将容易造成其相邻之间的铜箔一并被蚀刻的现象,造成芯片接置区内、外部分形同被弃孔隔开,使散热路径变为破碎、甚至被切断。Generally speaking, the through holes in the chip connection area 14 are arranged in an array. Please refer to FIG. 2 , which is a layout diagram of the ground plane of the BGA package substrate. In the substrate wiring design, at least the outermost through holes where the chip landing area 14 is located are mainly designed to transmit signals and connect power supplies, and are not connected to the ground layer, while the inside of the chip landing area 14 is used as a power supply or The signal connection for grounding, which will be formed in the ground layer of the substrate, and the outermost ring of through holes around the chip landing area 14 must be made into discarded holes 12 (electrically not connected), because the through holes are treated when they are insulated In the process, there will be some errors when etching the copper foil around the through-holes. In the current situation where the through-holes are too densely arranged, it is easy to cause the adjacent copper foils to be etched together, resulting in chip contact areas. The inner and outer parts are separated by abandoned holes, so that the heat dissipation path becomes broken or even cut off.

且由于芯片接置区中线路十分密集,在芯片运作中将会产生极大的热量,但因其对外部的散热路经,相当于被芯片接置区最外一圈的弃孔阻断,使热能无法快速的透过接地层横向散热,易对元件造成损伤。又密集排列的多个弃孔12,亦会造成芯片的相对有效的GND信号回路面积(信道)减少,即影响信号品质(特别是高速信号)。And because the lines in the chip connecting area are very dense, a lot of heat will be generated during the operation of the chip, but because of its heat dissipation path to the outside, it is equivalent to being blocked by the abandoned holes in the outermost circle of the chip connecting area, so that Heat energy cannot be quickly dissipated laterally through the ground layer, which can easily cause damage to components. The densely arranged multiple abandoned holes 12 will also reduce the relatively effective GND signal loop area (channel) of the chip, which affects signal quality (especially high-speed signals).

如图3所示,其上的贯穿孔位置皆与图2球栅阵列封装基板接地层的贯穿孔位置相对应。由于芯片接置区14所在最外一圈的贯穿孔主要设计成传递信号及连接电源之用,因此,图2中于芯片接置区最外一圈密集排列的弃孔12大部分在图3中为电性连接的导电孔。As shown in FIG. 3 , the positions of the through holes thereon correspond to the positions of the through holes in the ground layer of the BGA package substrate in FIG. 2 . Since the through holes in the outermost circle of the chip landing area 14 are mainly designed to transmit signals and connect power supplies, most of the discarded holes 12 densely arranged in the outermost circle of the chip landing area in Figure 2 are shown in Figure 3 Conductive holes for electrical connection.

发明内容Contents of the invention

本发明提供一种球栅阵列封装基板芯片接置区贯穿孔配置方式,用以改善半导体芯片于基板上的散热,并可以提升半导体芯片运作时的信号品质及电源品质,而不需增加任何成本即可提高球栅阵列封装基板的有效利用率。The present invention provides a method for disposing through holes in the chip contacting area of a ball grid array package substrate, which is used to improve the heat dissipation of the semiconductor chip on the substrate, and to improve the signal quality and power quality of the semiconductor chip during operation without increasing any cost. The effective utilization rate of the ball grid array package substrate can be improved.

本发明的球栅阵列封装基板信号层上芯片接置区贯穿孔配置方式包含有:一金属球栅垫阵列,由多个金属球栅垫组成;以及一贯穿孔阵列,由多个该贯穿孔组成且与金属球栅阵列交错排列。其中贯穿孔阵列的最外围包含有至少两贯穿孔圈用以作为芯片传递信号或连结电源用。且其中每一个该贯穿孔圈上相邻的两该贯穿孔间隔至少两个该金属球栅垫的距离。The through-hole configuration method of the chip connection area on the signal layer of the ball grid array package substrate of the present invention includes: a metal ball grid pad array, which is composed of a plurality of metal ball grid pads; and a through-hole array, which is composed of a plurality of the through-holes And it is alternately arranged with the metal ball grid array. The outermost periphery of the through-hole array includes at least two through-hole rings for transmitting signals or connecting power to the chip. And wherein two adjacent through-holes on each through-hole ring are separated by at least two distances of the metal ball grid pads.

本发明的球栅阵列封装基板接地层上芯片接置区贯穿孔配置方式包含有:一导电孔阵列,由多个导电孔组成;至少两贯穿孔预定位置圈,位于导电孔阵列的外围,其中每一个该贯穿孔预定位置圈上包含有多个弃孔。其中每一个该贯穿孔预定位置圈上相邻的两该弃孔间隔至少一个该导电孔的距离。The arrangement of the through holes in the chip connection area on the ground layer of the ball grid array package substrate of the present invention includes: a conductive hole array, which is composed of a plurality of conductive holes; at least two predetermined position circles of the through holes are located on the periphery of the conductive hole array, wherein Each circle of predetermined positions of the through holes contains a plurality of abandoned holes. Wherein each of the predetermined position circle of the through hole is spaced apart by at least one distance between the two adjacent discarded holes.

本发明在球栅阵列封装基板制作过程中先对贯穿孔的位置做一规划,使其具有多个散热通道,增加散热空间,以助于半导体芯片运作时所产生的热能藉此通道迅速传导出去,亦有助于信号品质及电源品质的传递。In the manufacturing process of the ball grid array package substrate, the present invention first plans the position of the through hole, so that it has multiple heat dissipation channels and increases the heat dissipation space, so as to help the heat energy generated during the operation of the semiconductor chip to be quickly conducted through the channels. , It also contributes to the transmission of signal quality and power quality.

附图说明Description of drawings

图1为球栅阵列封装基板的横截面示意图;1 is a schematic cross-sectional view of a ball grid array package substrate;

图2为现有技术的球栅阵列封装基板接地层的布局图;2 is a layout diagram of a ground layer of a ball grid array package substrate in the prior art;

图3为现有技术的球栅阵列封装基板电源层的布局图;3 is a layout diagram of a power supply layer of a ball grid array package substrate in the prior art;

图4为本发明一实施例球栅阵列封装基板信号层芯片接置区的布局图;FIG. 4 is a layout diagram of a chip connection area of a signal layer of a ball grid array package substrate according to an embodiment of the present invention;

图5为本发明一实施例球栅阵列封装基板接地层的布局图;5 is a layout diagram of a ground layer of a ball grid array package substrate according to an embodiment of the present invention;

图6为本发明一实施例球栅阵列封装基板电源层的布局图;及6 is a layout diagram of a power supply layer of a ball grid array package substrate according to an embodiment of the present invention; and

图7为本发明另一实施例球栅阵列封装基板接地层的布局图。FIG. 7 is a layout diagram of a ground layer of a ball grid array package substrate according to another embodiment of the present invention.

附图标记说明Explanation of reference signs

2信号层                4接地层2 signal layer 4 ground layer

6电源层                22贯穿孔阵列6 power layer 22 through-hole array

24金属球栅垫阵列       44多个通道24 Metal Ball Grid Pad Array 44+ Channels

12多个弃孔(电性不相连)More than 12 abandoned holes (electrically disconnected)

38多个导电孔More than 38 conductive holes

40、42贯穿孔预定位置圈40, 42 Predetermined position rings for through holes

8、10介电层            14、34芯片接置区8, 10 Dielectric layer 14, 34 Chip placement area

16、36金属层16, 36 metal layers

22a、22b贯穿孔位置22a, 22b through hole position

具体实施方式Detailed ways

有鉴于先前技术所述的缺点,本发明提供的方法,将芯片接置区贯穿孔位置的配置做一规划调整,使散热回路获得改善,因而可有效解决上述问题。In view of the disadvantages of the prior art, the method provided by the present invention adjusts the arrangement of the through holes in the chip mounting area to improve the heat dissipation circuit, thereby effectively solving the above problems.

本发明第一实施例为一球栅阵列封装基板一信号层中的一芯片接置区。如图4所示,芯片接置区34包含一贯穿孔阵列22与一金属球栅垫阵列24,其中该金属球栅垫阵列相对该贯穿孔阵列位移(1/2u,1/2v)交错排列。在本发明第一实施例中,该贯穿孔阵列22的最外两圈,为将芯片接置区34所在贯穿孔阵列最外一圈的相邻的贯穿孔,以图4下方而言位移(1u,1v)或(-1u,1v)。即相邻的贯穿孔位置22a移至该最外一圈的外侧,形成贯穿孔位置22b如图4所示的排列关系。The first embodiment of the present invention is a chip landing area in a signal layer of a ball grid array package substrate. As shown in FIG. 4 , the chip connection area 34 includes a through hole array 22 and a metal ball grid pad array 24 , wherein the metal ball grid pad array is staggered with displacement (1/2u, 1/2v) relative to the through hole array. In the first embodiment of the present invention, the outermost two circles of the through-hole array 22 are the adjacent through-holes of the outermost circle of the through-hole array where the chip mounting area 34 is located, and are displaced in terms of the lower part of FIG. 4 ( 1u, 1v) or (-1u, 1v). That is, the adjacent through-hole positions 22a are moved to the outside of the outermost circle, forming the arrangement relationship of the through-hole positions 22b as shown in FIG. 4 .

在本发明中,贯穿孔阵列最外圈包含有至少两圈的贯穿孔圈,用以传递信号或连接电源之用。且其中,这些用来传递信号或连接电源的贯穿孔圈上相邻的两个贯穿孔间隔至少两个金属球栅垫的距离。此外,贯穿孔阵列上其余的贯穿孔用以当作接地或连接电源之用。又芯片与基板间的信号传递藉由贯穿孔填充导电材料而与电源层、接地层的导电图案及信号层的芯片接置区以外的导线图案电性连接,称导电孔。In the present invention, the outermost circle of the through-hole array includes at least two through-hole circles for transmitting signals or connecting power. And wherein, two adjacent through-holes on the through-hole circle for transmitting signals or connecting power are separated by at least two metal ball grid pads. In addition, the remaining through-holes on the through-hole array are used for grounding or power supply. The signal transmission between the chip and the substrate is electrically connected to the conductive pattern of the power layer, the ground layer, and the conductive pattern outside the chip connection area of the signal layer by filling the through hole with conductive material, which is called a conductive hole.

请参阅图5为本发明一实施例球栅阵列封装基板的接地层布局图。图5中于此接地层中央有一相对应上信号层的芯片接置区34设置于该金属层36中,用以电性连接至一芯片;由于信号层上芯片接置区的最外二圈贯穿孔配位方式如上述方式改变,基板上的接地层的最外二圈贯穿孔配位也将对应而变更配置。而该芯片接置区34的贯穿孔预定位置圈40及42上制有弃孔。Please refer to FIG. 5 , which is a layout diagram of the ground layer of the BGA package substrate according to an embodiment of the present invention. In Fig. 5, a chip connection area 34 corresponding to the upper signal layer is arranged in the metal layer 36 in the center of the ground layer to be electrically connected to a chip; due to the outermost two circles of the chip connection area on the signal layer If the arrangement of the through-holes is changed as described above, the arrangement of the outermost two circles of through-holes on the ground layer on the substrate will also be changed correspondingly. Abandoned holes are formed on the through hole predetermined position circles 40 and 42 of the chip connection area 34 .

因此,接地层上芯片接置区最外圈至少包含两圈贯穿孔预定位置圈对应信号层上芯片接置区的贯穿孔圈。而每一个贯穿孔预定位置圈上相邻的两个弃孔间距至少为一个导电孔的距离,如此一来便可形成一多个通道44,以提供该接地层散热空间。其中如图5所示,在本发明第一实施例中,接地层上一贯穿孔预定位置圈上的弃孔与另一个贯穿孔预定位置圈上的弃孔平行排列。Therefore, the outermost circle of the chip landing area on the ground layer includes at least two circles of predetermined positions of through holes corresponding to the through hole circles of the chip landing area on the signal layer. And the distance between two adjacent discarded holes on the predetermined position circle of each through hole is at least the distance of one conductive hole, so that a plurality of channels 44 can be formed to provide the heat dissipation space of the ground layer. As shown in FIG. 5 , in the first embodiment of the present invention, the discarded holes on one predetermined position circle of through holes on the ground layer are arranged in parallel with the discarded holes on the other predetermined position circle of through holes.

由于将芯片接置区的最外二圈贯穿孔配位方式改变,将使原先在现有技术中被密集弃孔阻挡变为破碎、甚至被切断的散热回路得到有效的改善,使芯片运作时芯片接置区中的大部分的热量,可藉由该多个通道44迅速达到横向散热的功效,将热淤积并影响其可靠性的问题得以解决。又该多个通道44另一功效为,增加其回路面积,减少信号传递时被其弃孔阻挡的可能性,可提升信号品质尤其是高速信号。Due to the change of the coordination mode of the outermost two circles of through-holes in the chip-connecting area, the heat dissipation circuit that was originally blocked by dense abandoned holes in the prior art and becomes broken or even cut off will be effectively improved. Most of the heat in the contact area can quickly achieve the effect of lateral heat dissipation through the multiple channels 44, and the problem of heat accumulation and affecting its reliability can be solved. Another effect of the plurality of channels 44 is to increase the loop area, reduce the possibility of being blocked by the abandoned holes during signal transmission, and improve signal quality, especially high-speed signals.

当然,当信号层上芯片接置区的最外二圈贯穿孔配位方式已如上述方式改变,基板上的电源层的最外二圈贯穿孔配位也将对应而变更配置。请参阅图6所示,图6为球栅阵列封装基板电源层的布局图。由于芯片接置区34中最外二圈贯穿孔将其预设为传递信号及连接电源之用,故在图5中经移位排列的多个弃孔大部分在图6中为电性连接的导电孔。Certainly, when the arrangement of the outermost two circles of through holes in the chip connection area on the signal layer has been changed as described above, the arrangement of the outermost two circles of through holes on the power layer on the substrate will also be correspondingly changed. Please refer to FIG. 6 , which is a layout diagram of the power layer of the BGA package substrate. Since the outermost two circles of through holes in the chip connection area 34 are preset to transmit signals and connect power sources, most of the discarded holes arranged in shifts in FIG. 5 are electrically connected in FIG. 6 Conductive hole.

本发明第二实施例如图7所示,为球栅阵列封装基板一接地层。于此接地层中央有一相对应上信号层的芯片接置区34设置于该金属层36中,用以电性连接至一芯片。该芯片接置区34中间为包含多个导电孔的导电孔阵列38,而最外圈至少包含两个贯穿孔预定位置圈40及42对应信号层的贯穿孔圈。其中,贯穿孔预定位置40及42上的弃孔以图6所示的方式排列,使得不同贯穿孔预定位置圈上的弃孔形成近似锯齿状排列,以提供该接地层散热空间,达到快速横向散热的目的。其中每一个贯穿孔预定位置圈上相邻的两弃孔间距至少为一个导电孔的距离。As shown in FIG. 7 , the second embodiment of the present invention is a ground layer of the BGA package substrate. In the center of the ground layer, a chip connection area 34 corresponding to the upper signal layer is disposed in the metal layer 36 for electrically connecting to a chip. In the middle of the chip connecting area 34 is a conduction hole array 38 including a plurality of conduction holes, and the outermost circle includes at least two through hole predetermined position circles 40 and 42 corresponding to the through hole circle of the signal layer. Among them, the abandoned holes on the predetermined positions 40 and 42 of the through holes are arranged in the manner shown in FIG. Purpose. The distance between two adjacent abandoned holes on the predetermined position circle of each through hole is at least the distance of one conductive hole.

根据本发明第一实施例以及第二实施例,同理,接地层中不同贯穿孔圈上的弃孔以可以部份平行排列,部分锯齿状排列。According to the first embodiment and the second embodiment of the present invention, similarly, the discarded holes on different through-hole circles in the ground layer may be partially arranged in parallel, and partially arranged in a zigzag shape.

以上所述仅为本发明的具规划排列导孔位置的球栅阵列半导体封装结构一优选实施例,其并非用以限制本发明的实施范围,任何本领域内的技术人员在不违背本发明精神所做的修改均应属于本发明的范围,因此本发明保护范围当以所附的权利要求作为依据。The above is only a preferred embodiment of the ball grid array semiconductor package structure with planned arrangement of guide hole positions of the present invention, and it is not intended to limit the scope of the present invention. Anyone skilled in the art will not violate the spirit of the present invention. All modifications made should belong to the scope of the present invention, so the protection scope of the present invention should be based on the appended claims.

Claims (10)

1.一种信号层上芯片接置区贯穿孔配置结构,其中该芯片接置区用以电性连接一芯片,该结构包含有:1. A through-hole arrangement structure in a chip connection area on a signal layer, wherein the chip connection area is used to electrically connect a chip, and the structure includes: 一金属球栅垫阵列,由多个金属球栅垫组成;以及a metal ball grid pad array consisting of a plurality of metal ball grid pads; and 一贯穿孔阵列,与该金属球栅阵列交错排列,由多个该贯穿孔组成,a through-hole array, which is alternately arranged with the metal ball grid array, and is composed of a plurality of through-holes, 其中该贯穿孔阵列最外围有一第一贯穿孔圈以及一第二贯穿孔圈用以作为该芯片传递信号或连结电源之用。Wherein the outermost periphery of the through-hole array has a first through-hole ring and a second through-hole ring for transmitting signals or connecting power to the chip. 2.如权利要求1的贯穿孔配置结构,其中该第一与该第二贯穿孔圈上相邻的两该贯穿孔间隔至少两个该金属球栅垫的距离。2. The through-hole arrangement structure of claim 1, wherein the two adjacent through-holes on the first and second through-hole circles are separated by at least two distances of the metal ball grid pad. 3.如权利要求1的贯穿孔配置结构,其中该第一贯穿孔圈上的该贯穿孔与该第二贯穿孔上的该贯穿孔互相平行对称。3. The arrangement structure of through holes according to claim 1, wherein the through holes on the first through hole ring and the through holes on the second through hole circle are parallel and symmetrical to each other. 4.如权利要求1的贯穿孔配置结构,其中该第一贯穿孔圈上的该贯穿孔与该第二贯穿孔上的该贯穿孔形成近似锯齿状的排列。4. The arrangement structure of through holes according to claim 1, wherein the through holes on the first through hole circle and the through holes on the second through holes form an approximately zigzag arrangement. 5.如权利要求1的贯穿孔配置结构,其中该第一贯穿孔圈上的该贯穿孔与该第二贯穿孔上的该贯穿孔形成部分平行排列,部分交错排列。5. The arrangement structure of through-holes according to claim 1, wherein the through-holes on the first through-hole ring and the through-holes on the second through-holes are partially arranged in parallel and partially arranged in a staggered manner. 6.一种接地层上芯片接置区贯穿孔配置结构,其中该芯片接置区用以电性连接一芯片,该结构包含有:6. A through-hole arrangement structure in a chip landing area on a ground layer, wherein the chip landing area is used to electrically connect a chip, and the structure includes: 一导电孔阵列,由多个导电孔组成;A conductive hole array, consisting of a plurality of conductive holes; 一第一贯穿孔预定位置圈,位于该导电孔阵列的外围,包含有多个第一弃孔;以及A first through-hole predetermined position ring, located on the periphery of the conductive hole array, including a plurality of first abandoned holes; and 一第二贯穿孔预定位置圈,位于该第一贯穿孔预定位置圈的外围,包含有多个第二弃孔。A second through-hole predetermined position circle is located on the periphery of the first through-hole predetermined position circle, and includes a plurality of second discarded holes. 7.如权利要求6的接地层上芯片接置区贯穿孔配置结构,其中该第一与该第二贯穿孔预定位置圈上相邻的两该弃孔间隔至少一个该导电孔的距离。7 . The arrangement structure of through-holes in chip landing area on ground layer as claimed in claim 6 , wherein the two adjacent discarded holes on the predetermined position circle of the first and the second through-holes are separated by at least one distance of the conductive hole. 8 . 8.如权利要求6的接地层上芯片接置区贯穿孔配置结构,其中该第一贯穿孔预定位置圈上的该第一弃孔与该第二贯穿孔预定位置圈上的该第二弃孔互相平行排列。8. The arrangement structure of through-holes in the chip landing area on the ground layer according to claim 6, wherein the first ditch hole on the first through-hole predetermined position circle and the second through-hole predetermined position circle are mutually mutually parallel arrangement. 9.如权利要求6的接地层上芯片接置区贯穿孔配置结构,其中该第一贯穿孔预定位置圈上的该第一弃孔与该第二贯穿孔预定位置圈上的该第二弃孔交错排列,形成近似锯齿状的排列,以作为散热空间。9. The arrangement structure of through-holes in the chip landing area on the ground layer as claimed in claim 6, wherein the first ditch holes on the first through-hole predetermined position circle are interlaced with the second through-hole predetermined position circles Arranged to form an approximate zigzag arrangement to serve as a heat dissipation space. 10.如权利要求6的接地层上芯片接置区贯穿孔配置结构,其中不同贯穿孔预定位置圈上的该弃孔部分平行排列,部分交错排列。10. The arrangement structure of through-holes in the chip landing area on the ground layer according to claim 6, wherein the abandoned holes on different predetermined positions of the through-holes are partially arranged in parallel and partially arranged in a staggered manner.
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