CN1691265A - CRT unit - Google Patents

Abstract

The present invention discloses a cathode ray tube device, which applies a low potential acceleration voltage V2 to the second grid G2. The first focus voltage Vf1 is supplied to the sixth grid G6. A dynamic focus voltage (Vf2+Vd) is supplied to the third grid G3 and the seventh grid G7. Between the second grid and the third grid, a pre-focus lens with focusing effect in the horizontal direction and vertical direction is formed. Between the third grid and the fourth grid, a diverging lens is formed in the horizontal direction and a focusing lens is formed in the vertical direction. The role of the non-axisymmetric lens unit. The pre-focus lens and the non-axisymmetric lens unit are electrostatically coupled to each other.

Description

cathode ray tube device

This application is a divisional application of the invention patent application with the application number "02101827.8" and the invention title "cathode ray tube device" submitted by the applicant on January 9, 2002.

technical field

The present invention relates to cathode ray tube devices, and more particularly to cathode ray tube devices incorporating electron gun components for dynamic astigmatism compensation.

Background technique

A general color cathode ray tube device has an inline electron gun unit for emitting three electron beams, and a deflection yoke for generating a deflection magnetic field for deflecting the three electron beams emitted by the electron gun unit. The deflection yoke forms a non-uniform magnetic field consisting of a pincushion-shaped horizontal deflection magnetic field 10 and a barrel-shaped vertical deflection magnetic field shown in FIG. 9A.

The electron beam 6 passing through such a non-uniform magnetic field is affected by deflection aberration, that is, the astigmatism contained in the deflection magnetic field, that is, the electron beam 6 facing the peripheral portion of the fluorescent screen is subjected to vertical overfocus force 11V due to the deflection aberration. Therefore, as shown in FIG. 9B , the beam spot at the peripheral portion of the fluorescent screen is distorted, so that there is an extended halo 12 in the vertical direction and an extended core 13 in the horizontal direction. The larger the size of the cathode ray tube or the larger the deflection angle, the larger the deflection aberration that the electron beam receives. Such beam spot distortion remarkably deteriorates the sharpness of the peripheral portion of the phosphor screen.

As means for solving the degradation of resolution due to such deflection aberrations, there are electron gun components disclosed in JP-A-61-99249, JP-A-61-250934, and JP-A-2-72546. As shown in FIG. 10A, these electron gun components are basically composed of a first grid to a fifth grid, and form an electron beam generating part GE, a quadrupole lens QL and finally a main lens EL along the electron beam advancing direction. Three non-axisymmetric electron beam passing holes are arranged on the opposite faces of respective adjacent electrodes (for example, as shown in Figure 10B and Figure 10C, a horizontally long electron beam passing hole is set on one electrode, and a horizontally long electron beam passing hole is set on the other electrode. A vertically elongated electron beam passage hole) is provided to form a quadrupole lens QL.

This electron gun unit changes the lens strength of the quadrupole lens QL and the final main lens EL in synchronization with the change of the deflection magnetic field. In this way, the influence of the deflection aberration on the electron beam deflected toward the periphery of the fluorescent screen is alleviated to correct the distortion of the beam spot.

However, in such an electron gun structure, when the electron beam is deflected toward the periphery of the phosphor screen, the influence of the deflection aberration is very large. Therefore, even if the halo of the beam spot can be eliminated, the lateral flattening phenomenon cannot be completely corrected.

In addition, as another means for solving the degradation of sharpness due to such deflection aberrations, an electron gun unit having a double quadrupole lens structure as disclosed in Japanese Patent Application Laid-Open No. 3-93135 has been proposed. As shown in FIG. 11A and FIG. 11B , two quadrupole lenses with different polarities are formed on the cathode side of the main lens, so that the two quadrupole lenses act synchronously with the deflection magnetic field.

As shown in Fig. 11A and Fig. 11B, in such an electron gun structure, when the electron beam is focused on the central part of the phosphor screen, that is, there is no deflection (solid line in the figure), and when the electron beam is deflected to the peripheral part of the phosphor screen, there is deflection ( dotted line in the figure), so that the incident angles on the fluorescent screen 3 in the horizontal direction and the vertical direction are approximately equal. This is done to correct the lateral squishing at the peripheral portion of the phosphor screen as shown in FIG. 11C.

However, if the above-mentioned double quadrupole lens structure is introduced, the electron beams are focused in the vertical direction and diverge in the horizontal direction as the front quadrupole lens on the cathode side acts due to the deflection magnetic field. The lens expands the diameter of the electron beam in the horizontal direction.

As a result, a part of the electron beam passing through the area deviating from the central axis of the main lens in the horizontal direction will be greatly affected by the spherical aberration of the main lens, that is, the beam spot at the peripheral part of the fluorescent screen becomes a halo part accompanied by expansion in the horizontal direction. shape.

In order to eliminate the influence of the spherical aberration of the main lens in the horizontal direction produced by such a front-end quadrupole lens, it is necessary to suppress the divergence angle of the electron beam according to the lens aperture of the main lens when the quadrupole lens is active, so as to achieve The degree of mirror aberration effect.

That is, when focusing the electron beams on the peripheral portion of the fluorescent screen, the horizontal divergence angle of the electron beams incident on the main lens should be set so that it becomes the limit divergence angle not affected by the aberration component of the main lens. In this case, originally, the quadrupole lens at the front stage acts in a direction to diverge the electron beam divergence angle in the horizontal direction when deflecting the electron beam from the central portion of the phosphor screen to the peripheral portion. Therefore, the divergence angle of the electron beam in the horizontal direction is smaller when there is no deflection than when there is deflection. Correspondingly, the horizontal magnification of the quadrupole lens for the electron beam is larger when there is no deflection than when it is deflected, and the diameter of the beam spot in the center of the fluorescent screen is enlarged in the horizontal direction.

In addition, when focusing the electron beam on the central part of the fluorescent screen, the horizontal divergence angle of the electron beam incident on the main lens should be set so that it becomes the limit divergence angle not affected by the aberration component of the main lens. In this case, the divergence angle of the electron beam in the horizontal direction gradually increases during deflection, and is gradually affected by the aberration component of the main lens. Therefore, the beam spot at the peripheral portion of the phosphor screen has a shape accompanied by a halo in the horizontal direction.

In this way, if the divergence angle in the horizontal direction is affected by the quadrupole lens at the front stage, the diameter of the beam spot in the horizontal direction will expand in either the peripheral portion or the central portion of the fluorescent screen.

In addition, such a configuration in which double quadrupole lenses of different polarities are arranged on the cathode side of the main lens has a problem of increasing the dynamic focus voltage. This is because, if two quadrupole lenses of different polarity are produced at the same time, its effect is as if a cylinder-like lens is produced between the two quadrupole lenses, with respect to the position of the virtual object point of the main lens from the position of the main lens Step back towards the cathode side.

In addition, in a configuration in which such double quadrupole lenses having different polarities are arranged, the two quadrupole lenses act to cancel out the lens action. For this purpose, the lens sensitivity of each quadrupole lens must be enhanced. For example, as shown in FIG. 12A and FIG. 12B , by forming a quadrupole lens between electrodes provided with spacers protruding along the electron beam advancing direction, lens sensitivity can be enhanced. However, such an electrode structure is prone to errors due to factors such as the mounting accuracy of the spacer, and it is impossible to produce a stable effect.

Thus, there arises a problem in the CRT device of the conventional construction that it is impossible to completely correct the beam spot distortion at the peripheral portion of the phosphor screen, and it is difficult to obtain good focusing characteristics over the entire phosphor screen area.

Contents of the invention

The present invention is made in view of the above problems, and the technical problem to be solved is to provide a cathode ray tube device capable of forming a beam spot of a good shape in the entire fluorescent screen area.

A cathode ray tube device according to a first aspect of the present invention includes an electron gun member having an electron beam generating portion for generating electron beams and a main electron for focusing the electron beam generated by the electron beam generating portion on a target, and a deflection yoke The lens unit, wherein the deflection yoke generates a deflection magnetic field that deflects the electron beam emitted by the electron gun component in the horizontal direction and the vertical direction, is characterized in that the electron gun component has an A plurality of electrodes of the cathode of the first level voltage supply at least one focus electrode of a second level focus voltage higher than the first level, and supply a reference voltage close to the second level and superimposed on the reference voltage of the second level. at least one dynamic focus electrode for a dynamic focus voltage obtained by the alternating current component of the synchronous change of the deflection magnetic field, at least one anode electrode for supplying a third level anode voltage higher than the second level, and a support for fixing these plurality of electrodes An insulating support body, a first dynamic focus electrode supplying a dynamic focus voltage is arranged adjacent to the electron beam generating part, a first focus electrode supplying a focus voltage is arranged adjacent to the first dynamic focus electrode, and the first dynamic focus electrode is arranged adjacent to the first dynamic focus electrode. The peripheral portion of the electron beam passing hole through which the electron beam generated by the electron beam generating portion passes through the electrode is thinner than other portions.

Description of drawings

Fig. 1 is a horizontal sectional view showing a schematic configuration of a cathode ray tube device according to an embodiment of the present invention.

Fig. 2 is a vertical cross-sectional view showing a schematic structure of an electron gun unit according to a first embodiment to which the cathode ray tube device shown in Fig. 1 is applicable.

Fig. 3 is a schematic perspective view showing the structure of the second grid in the electron gun assembly shown in Fig. 2 .

Fig. 4 is a schematic perspective view showing the structure of the third grid in the electron gun assembly shown in Fig. 2 .

FIG. 5 is a schematic perspective view showing the structure of electrodes disposed on the surface of the fourth grid opposite to the third grid in the electron gun assembly shown in FIG. 2 .

6A is an optical model illustrating horizontal lens action on electron beams in the electron gun assembly shown in FIG. 2, and FIG. 6B is an optical model illustrating vertical lens action on electron beams in the electron gun assembly shown in FIG.

Fig. 7 is a schematic vertical cross-sectional view showing another embodiment of an electron gun unit that can be used in the cathode ray tube device shown in Fig. 1 .

Fig. 8 is a perspective view showing another schematic structure of the third grid in the electron gun assembly shown in Fig. 2 .

Fig. 9A shows the effect of the pincushion-shaped horizontal deflection magnetic field generated by the deflection yoke on the electron beam, and Fig. 9B shows the beam spot pattern of the electron beam deflected to the peripheral part of the fluorescent screen.

10A is a schematic configuration diagram of a conventional electron gun structure, and FIGS. 10B and 10C are shapes of electron beam passing holes for quadrupole lenses formed in the conventional electron gun structure.

11A is an optical model illustrating the horizontal direction lens action in the electron gun component of the conventional double quadrupole lens structure. FIG. 11B is an optical model illustrating the vertical direction lens action. FIG. A comparison diagram of the beam spots produced by the electron gun components.

12A and 12B show examples of structures for enhancing the lens sensitivity of quadrupole lenses.

13A and 13B show an example of an electrode structure for correcting side beam aberration.

Fig. 14 is a vertical cross-sectional view showing a schematic structure of an electron gun member according to a modified example of the first embodiment, from the cathode to the fifth grid.

Fig. 15 is a perspective view showing a schematic structure of a third grid in the electron gun assembly shown in Fig. 14 .

Fig. 16 is a vertical sectional view showing a schematic structure of an electron gun unit according to a second embodiment to which the cathode ray tube device shown in Fig. 1 is applicable, from the cathode to the fifth grid.

Fig. 17 is a perspective view showing a schematic structure of a third grid in the electron gun assembly shown in Fig. 16 .

Fig. 18 is a perspective view showing a schematic structure of electrodes disposed on the surface of the fourth grid opposite to the third grid in the electron gun assembly shown in Fig. 16 .

Fig. 19 is a vertical cross-sectional view showing a schematic structure of another electron gun member of the second embodiment from the cathode to the fifth grid.

Fig. 20 is a perspective view showing a schematic structure of a third grid in the electron gun assembly shown in Fig. 19 .

Fig. 21 is a vertical cross-sectional view showing the schematic structure of another electron gun member of the second embodiment from the cathode to the fifth grid.

Fig. 22 is a perspective view showing a schematic structure of a third grid in the electron gun assembly shown in Fig. 21 .

Fig. 23 is a perspective view showing a schematic structure of a third grid in another electron gun component of the second embodiment.

Fig. 24 is a perspective view showing a schematic structure of an electron gun member according to a modified example of the second embodiment, from the second grid to the fourth grid.

Fig. 25 is a perspective view showing a schematic structure of an electron gun member according to a modified example of the second embodiment, from the second grid to the fourth grid.

Detailed ways

A cathode ray tube device according to an embodiment of the present invention will be described below with reference to the drawings.

As shown in FIG. 1, a cathode ray tube device of the present invention, such as a color cathode ray tube device, has a vacuum envelope 9. As shown in FIG. The vacuum envelope 9 has a glass panel 1 and a funnel 2 that is sealed together with the glass panel 1 . The glass screen 1 has a fluorescent screen (target) 2 arranged on its inner surface and composed of stripe-shaped or dot-shaped three-color fluorescent layers emitting blue, green, and red light. The shadow mask 4 is installed opposite to the phosphor screen 2, and has a large number of small holes inside it.

The inline electron gun member 7 is provided inside the neck 5 corresponding to the small-diameter portion of the funnel 2 . The in-line electron gun component 7 emits three electron beams arranged in a line in the horizontal direction H formed by the middle beam 6G passing through the same plane and a pair of side beams 6B and 6R on both sides along the tube axis direction Z. 6B, 6G and 6R. In the in-line electron gun assembly 7, the centers of the side beam passage holes formed by the low-voltage side grid and the high-voltage side grid constituting the main electron lens unit, respectively, are decentered from each other. Thus, at the central portion of phosphor screen 3, the three electron beams are self-converging.

The deflection yoke 8 is installed outside the vacuum envelope 9 between the neck 5 and the large diameter part of the funnel 2 . The deflection yoke 8 generates a non-uniform deflection magnetic field that deflects the three electron beams 6B, 6G, and 6R emitted from the electron gun assembly 7 in the horizontal direction H and the vertical direction V. The non-uniform deflection magnetic field is formed by a pincushion-shaped horizontal deflection magnetic field and a barrel-shaped vertical deflection magnetic field.

The three electron beams 6B, 6G and 6R emitted by the electron gun component 7 are self-converging towards the fluorescent screen 3 on one side, and focus on the corresponding fluorescent layer on the fluorescent screen 3 on the other side. For deflection, the fluorescent screen 3 is scanned in the horizontal direction H and the vertical direction V. Through this, a color image is displayed.

The electron gun component 7 applicable to this cathode ray tube device, as shown in FIG. G4 (first focusing electrode), fifth grid G5, sixth grid G6 (second focusing electrode), seventh grid G7 (second dynamic focusing electrode), eighth grid G8 (intermediate electrode), 9 Grid G9 (anode electrode) and converging cup electrode C. The three cathodes K are arranged in a straight line in the horizontal direction. The first to ninth grids are arranged in this order from the cathode K along the electron beam traveling direction, and are supported and fixed by an insulating support.

In addition, the converging cup-shaped electrode C is fixed by welding with the ninth grid G9, and four contact heads are attached on the converging cup-shaped electrode C, which are used to cover and form the inner surface of the funnel 2 and the inner surface of the tube neck 5. The internal conductive film forms an electrical pathway.

A voltage of about 100 to 200V is applied to the three cathodes K (R, G, B), and the first grid G1 is grounded (or a negative potential V1 is applied). The second grid G2 and the fifth grid G5 are connected inside the tube, and a low-potential accelerating voltage V2 is applied from outside the cathode ray tube. The acceleration voltage V2 is about 500 to 800V.

The third grid G3 and the seventh grid G7 are connected inside the tube, and a dynamic focus voltage (Vf2+Vd) is supplied from outside the cathode ray tube. The dynamic focus voltage (Vf2+Vd) is the second focus voltage Vf2 (about 25% of the anode voltage Eb described later) of about 6 to 8KV as a reference voltage, and then superimposed and changed synchronously with the deflection magnetic field. The voltage formed by the AC component Vd.

The fourth grid G4 and the sixth grid G6 are connected inside the tube, and a first focus voltage Vf1 of a constant intermediate potential is supplied from outside the cathode ray tube. The first focus voltage Vf1 and the second focus voltage Vf2 are approximately equal to about 6 to 8 kV (a voltage corresponding to about 25% of the anode voltage Eb described later).

The ninth grid G9 is electrically connected to the converging cup electrode C, and the anode voltage Eb is supplied from outside the cathode ray tube, and the anode voltage is 25 to 35KV.

Near the electron gun component 7, as shown in Figure 2, there is a resistor R1, one end of this resistor R1 is connected with the 9th grid G9, and the other end is approached by the variable resistor VR outside the tube (also can not pass through the variable resistor VR). rheostat directly to ground). The resistor R1 has a power supply terminal R1-1 for supplying a voltage to the gate of the electron gun member 7 at a substantially middle portion thereof.

The eighth grid G8 is connected to the power supply terminal R1-1 on the resistor R1. A voltage obtained by dividing the anode voltage Eb by resistors, for example, about 65% of the anode voltage Eb, is supplied to the eighth grid G8 through the power supply terminal R1-1.

(first embodiment)

The first grid G1 is a thin plate-shaped electrode, and the first grid G1 corresponds to three cathodes K arranged in a line in the horizontal direction, and has three electron beam passage holes with small apertures (for example, a diameter of 0.30 mm) on its plate surface. to a circular hole of about 0.40mm, or a rectangular hole that is vertically or horizontally long).

The second grid G2 is a plate electrode as shown in FIG. 3 . The second grid G2 corresponds to the three cathodes K, and has three electron beam passage holes (for example, circular holes with a diameter of about 0.35 to 0.45 mm) on its plate surface that are slightly larger than the apertures formed by the first grid G1. G2-H. The ratio of the electron beam passing aperture G1 of the first grid G1 to the electron beam passing aperture G2 of the second grid G2 is generally set to 70%≤G1/G2≤100%, and can be selected around 75% or 90% according to the situation nearby. Further, on the surface of the second grid G2 opposite to the third grid G3, stripe-shaped grooves G2-S having long axes in the horizontal direction are formed corresponding to the electron beam passing holes G2-H. The groove G2-S is configured such that the diameter in the minor axis direction, that is, the diameter in the vertical direction is approximately equal to or slightly larger than the diameter of the electron beam passage hole G2-H. In addition, in this embodiment, the second grid G2 has a circular electron beam passage hole G2-H and a strip-shaped groove G2-S on the surface opposite to the third grid G3, but it is not necessarily limited to this structure. . That is, the second grid G2 may omit the groove G2-S and have only the electron beam passing hole G2-H.

In G3, as shown in FIG. 4, the third grid is a thin-plate electrode. For example, the plate thickness t is 0.2 to 1 mm. The third grid G3 corresponds to the three cathodes K, and has three electron beam passage holes G3-H on its plate surface which are slightly larger than those formed in the second grid G2. For example, the electron beam passage hole G3-H is a circular hole, and its diameter A is about 0.5 to 1.5 mm.

The fourth grid G4 is formed by butting open ends of two cup-shaped electrodes that are long in the tube axis direction Z. As shown in Figure 5, the cup-shaped electrode G4 opposite to the third grid G3 corresponds to the three cathodes K on its end face, and has three electron beam passing holes (for example, the vertical aperture is about 0.5 to 1.5mm, and the horizontal aperture It is a horizontal long hole of about 2.0 to 4.1mm) G4-H.

These electron beam passage holes G4-H have a short-axis direction aperture, that is, the vertical aperture is approximately equal to (or smaller than) the aperture A of the electron beam passage hole G3-H of the third grid G3, and the horizontal aperture is larger than the electron beam aperture. The horizontally long shape of the aperture A that can pass through the hole G3-H. In addition, the end surface of the cup-shaped electrode facing the fifth grid G5 has three large-diameter electron beam passage holes (for example, circular holes with a diameter of about 3.0 to 4.1 mm) corresponding to the three cathodes K.

The fifth grid G5 is formed by butting open ends of two cup-shaped electrodes long in the tube axis direction Z. The end surface of the cup-shaped electrode facing the fourth grid G4 has three large-diameter electron beam passage holes (for example, circular holes with a diameter of about 3.0 to 4.1 mm) corresponding to the three cathodes K. In addition, the end surface of the cup-shaped electrode facing the sixth grid G6 has three large-diameter electron beam passage holes (for example, circular holes with a diameter of about 3.0 to 4.1 mm) corresponding to the three cathodes K.

The sixth grid G6 is constituted by three cup-shaped electrodes and one pole-shaped electrode that are long in the tube axis direction Z. The two cup-shaped electrodes on the side of the fifth grid G5 connect their open ends, and the two cup-shaped electrodes on the side of the seventh grid G7 connect their respective end faces, and then the cup-shaped electrodes on the side of the seventh grid G7 The open end of the electrode is docked with the thin plate electrode.

The end faces of the three cup-shaped electrodes, corresponding to the three cathodes K, have three large-diameter electron beam passing holes (for example, circular holes with a diameter of 3.0 to 4.1 mm). The plate electrode opposite to the 7th grid G7 corresponds to the three cathodes K, and has three electron beam passing holes in a vertically elongated shape on its plate surface (for example, the horizontal aperture/vertical aperture=4.0 mm/4.5mm or so longitudinal hole).

The seventh grid G7 is composed of two cup-shaped electrodes and two plate-shaped electrodes with shorter lengths in the tube axis direction Z, and the two cup-shaped electrodes on the side of the sixth grid G6 connect their open ends, and The end surface of the cup-shaped electrode on the side of the eighth grid G8 is in contact with the thin-plate-shaped electrode, and the thin-plate-shaped electrode is in contact with the thick-plate-shaped electrode.

The end surface of the cup-shaped electrode facing the sixth grid G6 corresponds to the three cathodes K and has three horizontally elongated electron beam passing holes elongated in the horizontal direction H (for example, the horizontal direction aperture/vertical direction aperture=4.52mm /3.0mm horizontal long hole). The end surface of the cup-shaped electrode on the side of the eighth grid G8 corresponds to the three cathodes K, and has three large-diameter electron beam passage holes (for example, circular holes with a diameter of about 4.3 mm).

The thin-plate-shaped electrode corresponds to the three cathodes K on its plate surface, and has three electron beam passing holes with horizontally long and large apertures elongated in the horizontal direction H (for example, the aperture in the horizontal direction/the aperture in the vertical direction=4.34mm/3.0mm or so horizontal long hole). The thick-plate electrode facing the eighth grid G8 has three large-diameter electron beam passage holes (for example, circular holes with a diameter of about 4.34 mm) corresponding to the three cathodes K on the plate surface.

The eighth grid G8 is composed of a thick plate-shaped electrode with an electrode length of about 2.0mm along the electron beam advancing direction. The plate electrode corresponds to the three cathodes K on its plate surface and has three large-diameter electron The beam passes through a hole (eg a circular hole around 4.40 mm in diameter).

The ninth grid G9 is constituted by two plate electrodes and two cup electrodes. The thick-plate electrode facing the eighth grid G8 is in contact with the thin-plate electrode, and the thin-plate electrode is in contact with the end face of the cup-shaped electrode, and the two cup-shaped electrodes are in contact with their open ends.

The thick plate-shaped electrode opposite to the eighth grid G8 has an electrode length of about 0.6 mm to 1.5 mm along the electron beam advancing direction, and corresponds to three cathodes K on its plate surface, and has three electron beams with large apertures. Through a hole (such as a circular hole with a diameter of about 4.46mm). The thin-plate-shaped electrode corresponds to the three cathodes K on its plate surface, and has three electron beam passing holes with horizontally long and large apertures elongated in the horizontal direction H (for example, the aperture in the horizontal direction/the aperture in the vertical direction=4.46mm/3.2mm or so horizontal long hole). The end surfaces of the two cup-shaped electrodes correspond to the three cathodes K, and have three large-diameter electron beam passing holes (for example, circular holes with a diameter of about 4.46 to 4.52 mm).

The end face of the converging cup electrode C is in contact with the end face of the cup electrode of the ninth grid G9. The end face of the converging cup-shaped electrode C has three electron beam passage holes with large apertures (for example, circular holes with a diameter of about 4.46 to 4.52).

In such an electron gun structure, the distance between the centers of the electron beam passage holes through which the beams pass and the centers of the electron beam passage holes through which the side beams pass through the electrodes from the first grid G1 to the sixth grid G6 is For example, it is 4.92mm. The distance between the holes of the electrodes of the seventh grid G7 facing the eighth grid G8 is, for example, 4.72 mm, and the distance between the holes of the eighth grid G8 is, for example, 4.80 mm. The distance between the holes of the electrodes of the ninth grid G9 facing the eighth grid G8 is, for example, 4.88 mm.

In addition, the electrode spacing between the sixth grid G6 and the seventh grid G7, the electrode spacing between the seventh grid G7 and the eighth grid G8, and the electrode spacing between the eighth grid G8 and the ninth grid G9 are respectively set. It is set to about 0.6 mm.

In the electron gun unit 7 configured as described above, the electron beam generating portion is composed of the cathode K, the first grid G1 and the second grid G2. The electron beam generator emits electron beams toward the fluorescent screen, and the pre-focus lens (first electron lens unit) Prel is composed of a second grid G2 and a third grid G3. The pre-focus lens Prel pre-focuses the electron beam generated by the electron beam generating section.

The first quadrupole lens (first non-axisymmetric lens) QL1 is formed between the third grid G3 and the fourth grid G4. When the first quadrupole lens QL1 focuses the electron beam on the central part of the fluorescent screen, that is, when there is no deflection, the potential difference between the third grid G3 and the fourth grid G4 is approximately zero, or the voltage of the third grid G3 It is set to be lower than the voltage of the fourth grid G4. Therefore, almost no lens action is generated, or the lens action is set to have a focusing action in the horizontal direction and a diverging action in the vertical direction.

As the electron beams are deflected toward the peripheral portion of the fluorescent screen, a dynamic focus voltage (Vf2+Vd), which increases as the deflection amount of the electron beams increases, is applied to the third grid G3. Therefore, the lens function of the first quadrupole lens QL1 changes with the increase of the deflection amount of the electron beam, so that it relatively plays a diverging role in the horizontal direction and relatively plays a focusing role in the vertical direction.

The sub-lens is formed of the fourth grid G4, the fifth grid G5, and the sixth grid G6. The secondary lens pre-focuses the pre-focused electron beams. This sub-lens is a single-potential type electronic lens configured by arranging a fifth grid G5 supplying a relatively low potential voltage between a fourth grid G4 supplying a focus voltage and a sixth grid G6.

The main electron lens unit is formed of a sixth grid G6, a seventh grid G7, an eighth grid G8, and a ninth grid G9. The main electron lens unit finally focuses the electron beams pre-focused by the sub-lens on the fluorescent screen. The main electron lens unit has a second quadrupole lens (second non-axisymmetric lens) QL2 formed between the sixth grid G6 and the seventh grid G7, and The formed main lens portion (second electron lens unit) ML.

When the second quadrupole lens (second non-axisymmetric lens) QL2 is not deflected, the potential difference between the sixth grid G6 and the seventh grid G7 is approximately zero, or the voltage of the seventh grid G7 is set to The voltage is set to be lower than the voltage of the sixth grid G6. Therefore, almost no lens action is generated, or the lens action is set to have a diverging action in the horizontal direction and a focusing action in the vertical direction. At this time, a dynamic focus voltage (Vf2+Vd) which increases as the amount of electron beam deflection increases is applied to the seventh grid G7. Therefore, the lens effect of the second quadrupole lens QL2 changes as the deflection amount of the electron beam increases, so that its lens strength relatively plays a focusing role in the horizontal direction, and relatively plays a diverging role in the vertical direction.

The main lens portion ML has substantially the same focusing effect in both the horizontal direction and the vertical direction. The main lens portion ML changes as the deflection amount of the electron beam increases, making its lens strength weaker.

As shown in Fig. 6A and Fig. 6B, in the electron gun member of above-mentioned structure, with the electron beam generating part (cathode K-the 2nd grid G2) adjoins pre-condensing lens (the 2nd grid G2-the 3rd grid G3) ) Prel, and the first quadrupole lens (the third grid G3-the fourth grid G4) QL1 is arranged adjacent to the prefocus lens Prel. The prefocus lens Prel and the first quadrupole lens QL1 are electrostatically coupled because the thickness of the third grid G3 is very thin.

In addition, in FIG. 6A and FIG. 6B, the solid line represents the optical model when the electron beam is focused on the center of the fluorescent screen, that is, there is no deflection, and the dotted line represents the optical model when the electron beam is focused on the peripheral portion of the fluorescent screen, that is, there is deflection. Prel is a prefocus lens, QL1 is a first quadrupole lens, QL2 is a second quadrupole lens, ML is a main lens part, and DYL is a deflection aberration component contained in a deflection magnetic field.

That is, the third grid G3, which simultaneously constitutes the pre-focus lens Pre1 and the first quadrupole lens QL1, has an electrode length along the electron beam advancing direction (tube axis direction Z), that is, an electrode plate thickness t and a distance from the second grid G2. - In the case of the aperture A of the electron beam passage hole G3-H of the third grid G3 viewed from the side, if the distance between the electrodes of the third grid G3 and the fourth grid G4 constituting the first quadrupole lens QL1 is assumed is L, then its composition satisfies the following relationship.

(A-t)≥(L/2)

That is, in such a configuration, the center (L/2) of the first quadrupole lens QL1 formed between the third grid G3 and the fourth grid G4 exists between the second grid G2 and the third grid. The relatively large potential difference between G3 forms the electric field region (A-t) in which the electron beam passing through the third grid G3 passes through the hole and penetrates through the pre-focusing Prel.

According to such a configuration, when the dynamic focus voltage is applied to the third grid G3, it is possible to suppress an excessive rise of the dynamic focus voltage.

That is, the first electronic lens (pre-focus lens) part (Prel), which is formed by the second grid G2 and the third grid G3, and produces a focusing effect in the horizontal/vertical direction when the dynamic focus voltage is applied, and the first electronic lens (pre-focus lens) part (Prel) Electrostatic coupling occurs between the first axisymmetric lens (QL1) formed between the third grid G3 and the fourth grid G4. Therefore, the first non-axisymmetric lens (QL1) functions as a part of the first electron lens unit (Prel) to the extent of changing its polarity. Therefore, when the conventional double quadrupole lens works, the phenomenon that the position of the virtual object point retreats to the cathode side due to the re-creation of the first quadrupole lens in the empty space will still occur, and the dynamic focus voltage will not be caused. rise.

In addition, by arranging the prefocus lens Prel electrostatically coupled to the first quadrupole lens QL1 adjacent to the electron beam generating portion, the electrode group (the third grid G3 and the fourth grid G3) constituting the first quadrupole lens QL1 can be The opening diameter of the cup-shaped electrode on the third grid side of G4 is reduced to such an extent that the electron beams do not collide, so that the sensitivity of the first quadrupole lens QL1 can be increased.

Therefore, unlike the conventional double quadrupole lens structure, there is no need to provide spacers protruding in the electron beam advancing direction, and the problem of errors in accuracy can be avoided.

Furthermore, the electron beam passing holes of the third grid G3 and the electron beam passing holes of the cup electrode of the fourth grid G4 disposed on the side of the third grid G3 are made to have approximately the same diameter in the minor axis direction. Therefore, when the lens action of the first quadrupole lens QL1 changes synchronously with the magnetic deflection, the comprehensive lens action of the pre-focus lens Prel and the first quadrupole lens QL1 increases with the increase of the deflection amount of the electron beam in the vertical direction. As far as the focusing action is concerned, it has nothing to do with electron beam deflection in the horizontal direction, and only has a substantially unchanged lens action compared with the lens action in the vertical direction.

This is because, as shown in Figure 6A and Figure 6B, when deflecting in the horizontal direction, as shown by the dotted line, as the deflection amount of the electron beam increases, the focusing effect of the pre-focus lens Prel is enhanced, and at the same time, there is The diverging action of the first quadrupole lens QL1 is used to counteract this enhanced focusing action.

In addition, when deflecting in the vertical direction, as shown by the dotted line, as the amount of electron beam deflection increases, the focusing function of the pre-focus lens Prel is enhanced, and at the same time, the first quadrupole lens QL1 having a focusing function in the vertical direction is produced. Therefore, the focusing effect strength of the prefocus lens Pre1 formed when there is no deflection in the vertical direction is further enhanced by the focusing effect of the first quadrupole lens QL1 when deflected.

As described above, according to the first embodiment, when the dynamic focus voltage is applied, the divergence angle in the horizontal direction does not actually change, and only the focus is focused in the vertical direction, so it is possible to suppress the divergence angle from increasing before entering the main lens portion ML. . Therefore, the electron beam is not affected by the lens aberration generated by the main lens portion ML, and a beam spot of a good shape can be formed over the entire phosphor screen area.

The present invention is not limited to the first embodiment described above.

(Modification 1)

For example, in the first embodiment, one electrode to which a voltage is supplied via a resistor is arranged in the main electron lens unit, but there may be two or more electrodes. At this time, the aberration of the triangular distortion of the side beam section that is likely to occur can be solved by arranging the thin plate electrode with the triangular electron beam passing hole shown in FIG. 13A and FIG. 13B in the phosphor screen of the thick plate electrode in the final accelerating electrode side to compensate.

(Modification 2)

In the above-mentioned first embodiment, the third grid G3 has the circular electron beam passing hole G3-H shown in FIG. 4, but it is not limited to this structure. That is, as shown in FIG. 8, the third grid G3 may have a vertically elongated groove G3-S having a long axis in the vertical direction around the circular electron beam passage hole G3-H. In this way, the lens sensitivity of the first quadrupole lens QL1 formed between the third grid G3 and the fourth grid G4 can be further improved.

(Modification 3)

In the above-mentioned first embodiment, the eighth grid G8, which supplies voltage to the resistors in the grid constituting the main electron lens unit, has circular electron beam passage holes, but the present invention is not limited to this example.

That is, as shown in FIG. 7, the seventh grid (second dynamic focus electrode) G7 for supplying the dynamic focus voltage (Vf+Vd), the ninth grid (anode electrode) G9 for supplying the anode voltage Eb, and the An eighth grid (intermediate electrode) G8 arranged between them is formed, and the surface of the dynamic focus electrode G7 opposite to the intermediate electrode G8, the surface of the intermediate electrode G8 opposite to the dynamic focus electrode G7 and the anode electrode G9, and the anode The surface of the electrode G9 opposite to the intermediate electrode G8 serves as an electron beam passing hole common to the three electron beams. Even with such a structure, the same effect as that of the above-mentioned first embodiment can be obtained.

(Modification 4)

The electron gun component adopted in the above-mentioned first embodiment is a prototype machine for sealing with a pipe neck with a diameter of 22.5 mm (dimension length difference is ±0.7 mm), and the electrode opening diameter is set smaller, but it is not limited to this, for example The present invention can also be used for an electron gun component with an electrode opening diameter of about 5.5 to 6.2 mm sealed in a neck with a diameter of 29.1 mm, or for other electron gun components.

(Modification 5)

In the above-mentioned first embodiment, the first dynamic focusing electrode (third grid) is formed of a plate-like electrode, but the present invention is not limited thereto. For example, as shown in FIG. 14 , the first dynamic focus electrode G3 may be composed of a combination of a thinner cup-shaped electrode G3a and a plate-shaped electrode G3b. In addition, the first dynamic focus electrode G3 may be configured by a combination of a plurality of thinner cup-shaped electrodes or a combination of a plurality of plate-shaped electrodes.

For example, as shown in FIG. 15, the first dynamic focusing electrode G3 is composed of a cup-shaped electrode G3a arranged on the side of the electron beam generating part and a plate-shaped electrode G3b arranged on the side of the first focusing electrode G4. The cup-shaped electrode G3a has The approximately circular electron beams pass through the holes G3a-H. The plate electrode G3b has a vertically elongated electron beam passage hole G3b-H having a long axis in the vertical direction.

With such a configuration, the lens sensitivity of the first quadrupole lens QL1 formed between the third grid G3 and the fourth grid G4 can be improved. Of course, the electron beam passing holes G3b-H of the plate electrode G3b disposed on the first focusing electrode G4 side are not limited to the vertically elongated shape, and may be substantially circular electron beam passing holes with a large diameter.

In this way, the third grid G3 is composed of a plurality of electrodes, and the pre-focus lens PreL formed between the second grid G2 and the third grid G3 also has electron beam passage holes G3a-H from the cup-shaped electrode G3a. The electron lens region penetrating toward the fourth grid G4 side. This electron lens region is formed using an electric field permeating only the electron beam passing aperture A from the electron beam passing holes G3a-H. The first quadrupole lens QL1 formed between the third grid G3 and the fourth grid G4 is formed in an electron lens region where the prefocus lens PreL penetrates toward the fourth grid G4. That is, the prefocus lens PreL is electrostatically coupled to the first quadrupole lens QL1, so that the same effect as that of the above-mentioned first embodiment can be obtained.

As described above, according to the first embodiment and the modified examples, it is possible to provide a cathode ray tube device capable of obtaining good focusing characteristics over the entire fluorescent screen area and forming a good-shaped beam spot.

(Second Embodiment)

In this second embodiment, the structure of an electron gun member applicable to the above-mentioned cathode ray tube device will be described. In addition, since the basic structure of the electron gun components and the voltage applied to each grid are the same as those of the first embodiment, detailed description thereof will be omitted.

The configuration of the second embodiment is to reinforce the thinner third grid used in the first embodiment.

That is, in the electron gun structure having the above-mentioned dynamic focus electrode to which the dynamic focus voltage is applied, the following problems may arise in actual operation. That is, when the dynamic focus voltage is applied, an abnormal sound may be generated due to the change of the Coulomb force generated between the dynamic focus electrode and the electrode close to it. The cause of this abnormal sound is the mechanical vibration caused by the Coulomb force between the dynamic focusing electrode and its adjacent electrodes, the holding force of the electrodes and the mechanical strength of the electrodes themselves will be affected by the insulating support that supports and fixes the electrodes. The unusual sound. In addition, the narrower the distance between the dynamic focusing electrode as the vibration source and the stem as the power supply terminal, or the narrower the distance from the heating wire, which is the heat source of the cathode, the greater the influence on abnormal sound.

In order to improve this situation, it is necessary to take measures such as disposing the dynamic focusing electrode as far away from the stem or hot wire as possible, enhancing the supporting force of the insulating support for the dynamic focusing electrode and its adjacent electrodes, and enhancing the mechanical strength of the electrode.

On the other hand, as in the above-mentioned first embodiment, the plate thickness near the electron beam passing hole formed by the dynamic focusing electrode is preferably relatively thin. That is, by reducing the plate thickness of the dynamic focus electrode, the electrostatic coupling between the electron lenses formed before and after the dynamic focus electrode can be enhanced. Therefore, it is possible to effectively improve the distortion of the beam spot at the peripheral portion of the fluorescent screen, and to effectively suppress the increase of the dynamic focus voltage. However, if the thickness of the dynamic focusing electrode is reduced, the above-mentioned problem of abnormal sound is likely to occur.

In this way, if the plate thickness of the dynamic focus electrode is reduced, the beam spot distortion at the peripheral portion of the fluorescent screen can be effectively improved, and the increase of the dynamic focus voltage can be effectively suppressed, but on the contrary, the problem of abnormal sound is likely to occur. In addition, if the thickness of the dynamic focus electrode is increased, the problem of abnormal sound is less likely to occur, but conversely, the problem of distortion of the beam spot at the peripheral portion of the fluorescent screen and an increase in the dynamic focus voltage arise.

Therefore, in this second embodiment, as shown in FIG. 16, the mechanical strength of the third grid G3 which is the first dynamic focusing electrode which is disposed close to the stem and the filament is enhanced. That is, the cathode K and the first to fifth grids G1 to G5 are held on the insulating support 21 as shown in FIG. 16 . In addition, in this second embodiment, the description of a part of the fifth grid G5, the sixth grid G6 to the ninth grid G9, and the converging cup-shaped electrode C is omitted.

The first grid G1 and the second grid G2 have the same structure as that of the above-mentioned first embodiment.

The fourth grid G4 is formed by butting the open ends of two cup-shaped electrodes that are longer in the tube axis direction Z. As shown in FIG. Corresponding to the three cathodes K, there are three horizontally long electron beam passage holes (for example, a horizontally long hole with a vertical aperture of about 0.5 to 1.5 mm and a horizontal aperture of about 2.0 to 4.1 mm) G4 -H.

These electron beam passage holes G4-H are electron beam passage holes whose vertical aperture is approximately equal to (or smaller than) the electron beam passage hole G3-H of the third grid G3, and whose horizontal aperture is larger than that of the third grid G3. horizontally long shape. In addition, the cup-shaped electrode G4-B opposite to the fifth grid G5 corresponds to the three cathodes K on its end face, and has three circular electron beam passing holes with large apertures (for example, a circular hole with a diameter of about 3.0 to 4.1 mm). hole).

The third grid G3 has the shape shown in FIGS. 16 and 17 . That is, the peripheral portion of the electron beam passage hole G3-H of the third grid G3 protrudes concentrically toward the side of the second grid G2 constituting the electron beam generating portion. The electron beam passage hole G3-H is formed at the approximate center of a circular portion corresponding to the lower portion viewed from the fourth grid G4 side.

The plate thickness T0 around the electron beam passing hole G3-H is slightly farther than other portions of the electron beam passing hole G3-H, for example, from the electron beam passing hole G3-H to the embedded portion G3-L fixed to the insulating support 21. The part plate thickness T1 should be thinner. Conversely, in other words, the third grid G3 is formed to be thicker than the plate thickness T0 near the electron beam passing hole G3-H. For example, the third grid G3 has an electrode strength enhancing portion between the electron beam passing hole G3-H and the embedded portion G3-L, that is, a portion formed along the edge of the electron beam passing hole G3-H toward the third grid G2. The concentric circular plate thickness part G3-T protruding from the side. Since the third grid G3 has such a structure, the mechanical strength can be increased.

Therefore, even when the dynamic focus voltage (Vf2+Vd) is applied to the third grid G3, mechanical vibration caused by Coulomb force between the third grid G3 and its front and rear electrodes can be suppressed. In this way, by suppressing the vibration of the vibration source, it is possible to prevent abnormal sound from being generated from the electron gun member.

In addition, by reducing the plate thickness T0 of the third grid G3 near the electron beam passage hole G3-H, the first electron lens PreL and the third electron lens PreL formed between the second grid G2 and the third grid G3 can be strengthened. Electrostatic coupling of the first axisymmetric lens QL1 formed between the grid G3 and the fourth grid G4. Therefore, as described above, the lens action of the first electron lens PreL and the first non-axisymmetric lens QL1 can be configured as if a single lens action. In addition, local electric field deformation due to the third grid G3 which is a barrier between the first electron lens PreL and the first non-axisymmetric lens QL1 can be suppressed.

As described above, according to the second embodiment, the thickness of the peripheral portion corresponding to each electron beam passing hole of the first dynamic focusing electrode is made thinner than the thickness of other portions of the electrode. By applying a dynamic focus voltage to the first dynamic focus electrode, between the electron beam generating part and its adjacent first dynamic focus electrode, and one electron lens unit having focusing functions in the horizontal direction and the vertical direction, respectively, is formed. In addition, a first non-axisymmetric lens unit is formed between the first dynamic focus electrode and the first focus electrode at the same time. By reducing the plate thickness of the first dynamic focusing electrode at the periphery of the electron beam passing hole, the two adjacent electron lenses formed by the first dynamic focusing electrode, that is, the first electron lens unit and the first non-axisymmetric lens unit are strengthened electrostatic coupling. In this way, the distortion of the ellipse of the beam spot at the periphery of the fluorescent screen can be effectively improved, and at the same time, the rise of the dynamic focus voltage can be effectively suppressed.

At the same time, according to this cathode ray tube device, the plate thickness other than the peripheral portion of each electron beam passage hole formed by the first dynamic focusing electrode is increased. Therefore, even if a parabolic voltage (AC component) of the dynamic focus voltage is applied to the first dynamic focus electrode, the first dynamic focus electrode caused by a change in the Coulomb force of an electrode close to the first dynamic focus electrode can be suppressed. of mechanical vibration. In addition, by providing an electrode strength enhancing portion formed by a lower portion or a riser portion between the peripheral portion of each electron beam passage hole of the first dynamic focusing electrode or between the embedded portion fixed to the insulating support and the electron beam passage hole, the first dynamic focusing electrode can be suppressed. 1 Mechanical vibration of the dynamic focusing electrode. This can effectively suppress the occurrence of abnormal sounds.

The present invention is not limited to the second embodiment described above.

(Modification 1)

For example, the third grid (first dynamic poly electrode) G3 may have the structure shown in FIGS. 19 and 20 . That is, the position of the electron beam passage hole G3-H along the tube axis direction Z of the third grid G3 substantially coincides with the position of the embedded portion G3-L.

The plate thickness T0 around the electron beam passage hole G3-H is thinner than the plate thickness T2 of other portions slightly away from the electron beam passage hole G3-H, for example, from the electron beam passage G3-H to the embedded portion G3-L. Conversely, in other words, the third grid G3 is formed to be thicker than the plate thickness T0 near the electron beam passing hole G3-H.

That is, the third grid G3 has an electrode strength enhancement part between the electron beam passage hole G3-H and the embedded part G3-L, that is, a concentric circular plate thickness part G3 formed along the edge part of the electron beam passage hole G3-H -T. In addition, the third grid G3 has a concentric starting portion (from the side of the second grid G2) formed to protrude toward the fourth grid (first focusing electrode) G4 side in the peripheral portion of the plate thickness portion G3-T. Look at the lower part of the concentric circle) G3-P is used as the electrode strength enhancement part. The electron beam passing hole G3-H is formed at the approximate center of the circular portion corresponding to the lower portion viewed from the side of the fourth grid G4. Since the third grid G3 has such a structure, the plate thickness around the electron beam passing hole G3-H can be reduced and the mechanical strength can be enhanced.

In addition, the apex of the portion G3-P is arranged close to the fourth grid (first focusing electrode) G4, so that the Coulomb force acting between the third grid electrode G3 and the fourth grid G4 is mainly at the third grid electrode G4. The interaction between the vertex of the starting portion G3-P of the grid G3 and the fourth grid G4, on the contrary, is most effective in the middle of the vertical vertical fulcrum (the embedded portion G3-L inserted into the insulating support 21). The electron beam passing hole G3-H, which vibrates on the third grid G3 as a force receiving point, is arranged away from the fourth grid G4. In this modification, in particular, mechanical vibration due to Coulomb force when a dynamic focus voltage is applied to the third grid G3 can be suppressed.

Therefore, similar to the above-mentioned second embodiment, it is possible to effectively change the elliptical distortion of the beam spot generated in the peripheral portion of the fluorescent screen, effectively suppress the increase of the dynamic focus voltage, and effectively suppress the occurrence of abnormal sound.

(Modification 2)

In addition, for example, the third grid (first dynamic focus electrode) G3 may have the structure shown in FIGS. 21 and 22 . That is, the peripheral portion of the electron beam passage hole G3-H of the third grid G3 protrudes concentrically toward the fourth grid G4. The electron beam passes through G3-H and is formed at the approximate center of the circular portion corresponding to the lower portion viewed from the side of the second grid G2.

The plate thickness T0 around the electron beam passage hole G3-H is thinner than that of other parts slightly away from the electron beam passage hole G3-H, for example, the plate thickness T3 of the portion from the electron beam passage hole G3-H to the embedded part G3-L . Conversely, in other words, the third grid G3 is formed to be thicker than the plate thickness T0 near the electron beam passage G3-H. For example, the third grid G3 has an electrode strength enhancing portion between the electron beam passing hole G3-H and the embedded portion G3-L, that is, a portion formed along the edge of the electron beam passing hole G3-H toward the fourth grid G4. The concentric circular plate thickness part G3-T protruding from the side. Since the third grid G3 has such a structure, the plate thickness around the electron beam passage hole G3-H can be reduced and the mechanical strength can be enhanced.

Moreover, according to such a structure, the electron beam passage hole G3-H of the 3rd grid G3 can be brought close to the 4th grid G4. Therefore, the lens action of the first non-axisymmetric lens QL1 formed between the third grid G3 and the fourth grid G4 can be further enhanced. At the same time, the interval between the embedding portion G3-L of the third grid G3 and the embedding portion G4-L of the fourth grid G4 can be increased. Therefore, withstand voltage characteristics can be improved.

Therefore, similar to the above-mentioned second embodiment, it is possible to effectively change the elliptical distortion of the beam spot generated in the peripheral portion of the fluorescent screen, effectively suppress the increase of the dynamic focus voltage, and effectively suppress the occurrence of abnormal sound.

(Modification 3)

In the above-mentioned second embodiment, among the grids constituting the main electron lens unit, the eighth grid G8, which is a grid to which a voltage is applied by a resistor, has a circular electron beam passage hole, but it is not limited to this. The above-mentioned first embodiment is the same, and the same effect can be obtained by adopting the structure shown in FIG. 7 .

(Modification 4)

In the above-mentioned second embodiment, the electron beam passage hole G3-H formed by the third grid G3 is a simple circular hole shape as shown in FIG. 17, but as shown in FIG. -A structure in combination with the elongated groove portion G3-B formed on the fourth grid G4 side. With such a structure, the lens action of the first non-axisymmetric lens ( QL1 ) formed between the third grid G3 and the fourth grid G4 can be further enhanced.

(Modification 5)

In the above-mentioned second embodiment, the electron beam passing hole G3-H of the first dynamic focusing electrode (third grid G3) is formed in a substantially circular shape, but the present invention is not limited thereto. For example, as shown in FIG. 24, the electron beam passing hole G3-H of the third grid G3 may have a horizontally long shape. In addition, as shown in FIG. 25, the electron beam passage hole G3-H of the third grid G3 may be vertically long. In addition, the electron beam passage holes G3-H of the third grid G3 may have other shapes. Even if the third grid G3 is configured in this way, the same effect as that of the above-mentioned second embodiment can be obtained.

As described above, according to the second embodiment and the modified examples, it is possible to provide a cathode ray tube device capable of forming a beam spot in a good shape over the entire phosphor screen area and suppressing the generation of abnormal sound from the electron gun components.

Claims (8)

1. A cathode ray tube device, comprising an electron gun component and a deflection coil, The electron gun member has an electron beam generating portion for generating electron beams and a main electron lens unit for focusing the electron beams generated by the electron beam generating portion on a target, The deflection coil generates a deflection magnetic field that deflects the electron beam emitted by the electron gun component in the horizontal direction and the vertical direction, It is characterized in that, The electron gun member has a plurality of electrodes constituting the electron beam generating portion including a cathode supplying a voltage of a first level with a relatively low potential, and supplies at least one of a focus voltage of a second level higher than the first level. The focusing electrode supplies at least one dynamic focusing voltage obtained by superimposing a dynamic focusing voltage obtained by superimposing an AC component that changes synchronously with the deflection magnetic field on a reference voltage close to the second level, and supplies a second voltage higher than the second level. at least one anode electrode for a 3-level anode voltage, and an insulating support supporting and fixing these plurality of electrodes, a first dynamic focus electrode for supplying a dynamic focus voltage is disposed adjacent to the electron beam generating portion, and a first focus electrode for supply of a focus voltage is disposed adjacent to the first dynamic focus electrode, In the first dynamic focusing electrode, a peripheral portion of an electron beam passing hole through which the electron beam generated by the electron beam generating portion passes is thinner than other portions. 2. The cathode ray tube device according to claim 1, wherein: The first dynamic focusing electrode is provided with an electrode strength enhancing device formed of a concave portion or a convex portion between each electron beam passage hole and the embedded portion fixed on the insulating support. 3. The cathode ray tube device according to claim 1, wherein: The first dynamic focusing electrode has a concentric protruding portion protruding toward the first focusing electrode side formed on a peripheral portion of each electron beam passing hole, The electron beam passing hole is formed at an approximate center corresponding to a concave portion viewed from the first focusing electrode side. 4. The cathode ray tube device according to claim 1, wherein: The first dynamic focusing electrode has an approximately circular electron beam passing hole, The first focusing electrode has an aperture in the horizontal direction larger than an aperture in the vertical direction on the side of the first dynamic focusing electrode, and the aperture in the vertical direction is the same as or smaller than the electron beam passage hole of the first dynamic focusing electrode. The horizontally long electron beam passes through the hole, A non-axisymmetric lens acting synchronously with a deflection magnetic field is formed between the first dynamic focus electrode and the first focus electrode. 5. The cathode ray tube device according to claim 1, wherein: When the electron beam is deflected, the first electron lens unit formed between the electron beam generating part and the first dynamic focusing electrode has focusing functions in the horizontal direction and the vertical direction respectively, and in the first dynamic focusing The first non-axisymmetric lens unit formed between the electrode and the first focusing electrode relatively has a diverging effect in the horizontal direction and relatively has a focusing effect in the vertical direction, The first electron lens unit is electrostatically coupled to the first non-axisymmetric lens unit. 6. The cathode ray tube device according to claim 5, wherein: The comprehensive lens effect of the first electron lens unit and the first non-axisymmetric lens unit has a focusing effect in the vertical direction that increases with the increase of the deflection of the electron beam, and has nothing to do with the deflection of the electron beam in the horizontal direction, Lens action that does not change or changes little. 7. The cathode ray tube device according to claim 5, wherein: The main electron lens unit has a second focusing electrode for supplying the focusing voltage, a second dynamic focusing electrode for supplying the dynamic focusing voltage, and the anode electrode, When the electron beam is deflected, the second non-axisymmetric lens unit formed between the second focusing electrode and the second dynamic focusing electrode has a focusing effect relatively in the horizontal direction, and has a focusing effect relatively in the vertical direction. The divergence effect, the structure of the second electron lens unit formed between the second dynamic focusing electrode and the anode electrode, makes the lens effect in at least the vertical direction weaken as the deflection amount of the electron beam increases. 8. The cathode ray tube device according to claim 7, wherein: Between the first non-axisymmetric lens unit and the second non-axisymmetric lens unit, there is a single-potential electronic lens unit including the focus voltage and the dynamic focus voltage at different voltages.

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