CN1688103A - High-frequency sound surface wave device emtal alloy film with electromigration-resistance - Google Patents

Abstract

The invention discloses a high-frequency surface acoustic wave device metal alloy thin film with anti-electromigration, which belongs to the manufacturing technology of the surface acoustic wave device. The metal alloy thin film is an Al-Co-Mo alloy thin film deposited on the piezoelectric substrate by means of physical vapor deposition, in which Mo is 0.1-2wt%, Co is 0.1-2wt%, and the rest is Al. Used in high-power, high-frequency surface acoustic wave devices, it has anti-electromigration, improves the adhesion and power bearing capacity of thin films in high-frequency surface acoustic wave devices, and improves the accuracy of reactive ion etching.

Description

Metal Alloy Thin Films with Electromigration Resistance for High Frequency Surface Acoustic Wave Devices

technical field

The invention belongs to the manufacturing technology of surface acoustic wave devices, in particular to a metal alloy thin film of high-frequency surface acoustic wave devices with anti-electromigration.

Background technique

Surface acoustic wave (SAW) filters are widely used in modern communication systems. In the manufacturing process of SAW devices, the conversion of electrical signals and acoustic signals is completed by interdigital transducers. Aluminum has high electrical conductivity, low acoustic impedance, stable chemical properties, and easy deposition, so it is widely used as a material for interdigital transducers. For a SAW filter with a working frequency of GHz, the width of the fingers of the interdigital transducer is generally on the order of microns or nanometers. Such a fine electrode requires strong power and mechanical endurance, because Al has a high self-diffusion coefficient, Repeated stress from surface acoustic waves at high power will cause Al atoms to migrate along the grain boundaries, which will cause voids or hillocks in the Al film, and the electrodes will be easily disconnected or short-circuited. High power will bring high temperature to the substrate surface. It also makes the device vulnerable to failure. At the same time, the higher the filter frequency, the smaller the thickness of the film is required, resulting in a decrease in the adhesion between the Al film and the substrate, which seriously affects the device performance. At present, in order to improve the properties of Al films, some high-melting point metals (Ti, W, Cu, Co, Mo, Y, etc.) have been used as transition layers to deposit Al films, or to form aluminum alloy films. However, alloy films containing Cu W have limitations in reactive ion etching. The main performance is that etching is difficult, and the etched graphic interface is rough. Most of the high-frequency devices are produced by dry etching technology - ion beam etching, plasma etching, reactive ion etching (RIE) and other methods. Among them, the RIE method is a process of strengthening the chemical reaction between active ions with a certain bombardment energy and the solid surface. It not only utilizes the sputtering effect of ions, but also the chemical action of active particles, which can provide precise control of the side profile of the electrode. Very steep profile, therefore, is widely used in the manufacture of high-frequency SAW devices. At present, the Al film is generally etched by a mixed gas of Cl ₂ and BCl ₃ . If the thin film metal reacts with the etching gas (Cl ₂ ) to form a low-boiling, volatile chloride, the etching can precisely control the side profile.

Contents of the invention

The purpose of the present invention is to provide a new high-frequency surface acoustic wave device metal alloy film with anti-electromigration, characterized in that: the high-frequency surface acoustic wave device metal alloy film with anti-electromigration is an Al alloy prepared by physical vapor deposition. - Co-Mo alloy thin film, its composition: Mo is 0.1-2wt%, Co is 0.1-2wt%, and the rest is Al; in the process of surface acoustic wave device preparation, the added alloy elements are easily mixed with etching gas Cl ₂ The reaction generates volatile chlorides with a boiling point below 1000°C, so that precise device patterns can be obtained by reactive ion etching; metal Mo and Co can inhibit the migration of Al atoms due to their high melting point and low diffusion coefficient, thereby improving the performance of the aluminum film . This thin film exhibits strong adhesion and power handling in high frequency surface acoustic wave devices.

Beneficial Effects of the Invention The new alloy is used for high-power, high-frequency surface acoustic wave devices, has the ability to resist electromigration, improve the adhesion and power bearing capacity of thin films in high-frequency surface acoustic wave devices, and simultaneously improve the accuracy of reactive ion etching.

Description of drawings

Fig. 1 is the schematic sectional view of medium and high frequency surface acoustic wave device of the present invention

Detailed ways

The invention provides a high-frequency surface acoustic wave device metal alloy thin film with anti-electromigration. Its metal alloy film is an Al-Co-Mo alloy film prepared by physical vapor deposition, and its composition: Mo is 0.1-2wt%, Co is 0.1-2wt%, and the rest is Al; In the cross-sectional diagram of the wave device, there is an Al-Co-Mo alloy thin film 2 on the piezoelectric substrate 1, wherein the piezoelectric substrate 1 is SiO ₂ , LiNbO ₃ or LiTaO ₃ . The added metal Mo and Co elements are easy to react with the etching gas Cl ₂ to form volatile chlorides with a boiling point below 1000 ° C, so that reactive ion etching can be used to obtain accurate device patterns; metal Mo and Co are diffused due to their high melting points. The coefficient is low, which can inhibit the migration of Al atoms, thereby improving the performance of the aluminum film. This thin film exhibits strong adhesion and power handling in high frequency surface acoustic wave devices. In the process of making high-frequency surface acoustic wave devices, the Al-Co-Mo alloy film 2 is deposited on the piezoelectric substrate 1 by physical vapor deposition method, and the thickness of the Al-Co-Mo alloy film 2 varies with the frequency of the surface acoustic wave device. Photolithography or electron beam direct writing technology is used to fabricate the surface acoustic wave device pattern, and reactive ion etching is carried out by Cl ₂ and BCl ₃ mixed gas (BCl ₃ : Cl ₂ =70sccm:15sccm) for etching.

Example: On the three piezoelectric substrates of SiO ₂ , LiNbO ₃ or LiTaO ₃ , the composition of the alloy film is Mo: 0.6wt%, Co: 1wt%, and the rest is Al; Mo: 2wt%, Co: 0.1wt%, The rest is Al and Mo: 1wt%, Co: 1wt%, and the rest is Al components to make high-frequency surface acoustic wave devices. After testing, its thin film has better anti-electromigration ability and thin film adhesion in high-frequency surface acoustic wave devices. Effort and power handling are improved. The alloy composition is Mo: 0.6wt%, Co: 1wt%, and the rest is Al. The nano-scratch test shows that the critical load is about double that of the pure Al film, indicating that the adhesion of the alloy film is greatly increased.

Claims (2)

1. A high-frequency surface acoustic wave device metal alloy film with anti-electromigration is characterized in that: the high-frequency surface acoustic wave device metal alloy film with anti-electromigration is an Al- The Co-Mo alloy thin film is composed of 0.1-2wt% Mo, 0.1-2wt% Co, and Al in the rest. 2 . The high-frequency surface acoustic wave device metal alloy thin film with anti-electromigration according to claim 1 , wherein the piezoelectric substrate is SiO ₂ , LiNbO ₃ or LiTaO ₃ .