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CN1684546A - Micro silicon microphone and preparation method thereof - Google Patents

Micro silicon microphone and preparation method thereof Download PDF

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Publication number
CN1684546A
CN1684546A CN 200410033638 CN200410033638A CN1684546A CN 1684546 A CN1684546 A CN 1684546A CN 200410033638 CN200410033638 CN 200410033638 CN 200410033638 A CN200410033638 A CN 200410033638A CN 1684546 A CN1684546 A CN 1684546A
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China
Prior art keywords
silicon
film
polysilicon
microphone
pole plate
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CN 200410033638
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CN100536608C (en
Inventor
张大成
胡维
乔东海
李婷
王玮
田大宇
罗葵
李静
阮勇
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Peking University
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Peking University
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Abstract

This invention provides a micro-silicon microphone and its preparation method, in which, said microphone includes a monocrystal silicon film and polysilicon film as the capacitor pole plates, the polysilicon film is a movable pole plate, several release holes are set on the monosilicon film and rib reinforcement structures are formed on the polysilicon film, the rib reinforcement structure is corresponding to the release hole on the monocrystal silicon film and inlayed in the release holes. The preparation method utilizes ICP technology to carry out deep bar etching to either get the release holes or realize polysilicon films with the rib reinforcement structure.

Description

Little silicon microphone and preparation method thereof
Affiliated technical field
The invention belongs to microelectromechanical systems (MEMS) field, be specifically related to a kind of little silicon microphone and preparation method thereof based on silicon technology.
Background technology
For field of acoustics, microphone device consistency that many traditional process technologies are made and poor stability, reliability are low, have limited the application of microphone aspect high-fidelity and speech recognition.Silicon MEMS process technology is a kind of new manufacturing process, and its processing method and ability await constantly to be invented, innovate and be practical.Little silicon microphone is an Electret Condencer Microphone, have characteristics such as noise is little, distortion is little, sensitivity height, its structure is: adopt the pole plate of the monocrystalline silicon membrane of expansion boron as electric capacity, the polysilicon membrane of the another one pole plate of electric capacity for mixing, the monocrystalline silicon pole plate is provided with several release aperture, when air passes through release aperture, causes the polysilicon membrane vibration, and then the electric capacity between two pole plates changes, and obtains the information of air vibration by changes in capacitance.The polysilicon film surface smoothing of present little silicon microphone in use easily adheres to, and the problem of wave distortion occurs.The release aperture processing technology of this microphone also need be carried out dense boron diffusion earlier and be formed after stopping layer, at EPW solution (ethylenediamine NH 2(CH 2) 2NH 2, catechol C 6H 4(OH) 2, water H 2O) corrode in and could form because long dense boron diffusion meeting produces bigger stress on silicon chip, this microphone also exist structural stress greatly, poor stability, defect of high cost.
Summary of the invention
The present invention has overcome the defective of above-mentioned little silicon microphone structure and processing technology, a kind of little silicon microphone and preparation method thereof is provided, can avoid the wave distortion problem that occurs in flat membrane structure effectively, the microphone structure stress of preparation is little, good stability and reliability height.
Technology contents of the present invention: a kind of little silicon microphone, comprise monocrystalline silicon membrane and polysilicon membrane as capacitor plate, leave the space between two films, but polysilicon membrane is a movable plate electrode, and monocrystalline silicon thin film is provided with several release aperture, also is provided with insulating barrier between monocrystalline silicon membrane and polysilicon membrane, establish etch resistant layer on the insulating barrier, it is characterized in that: form reinforcing rib structure on polysilicon membrane, this structure is corresponding with the release aperture on the monocrystalline silicon thin film, and reinforcing rib structure is embedded in the release aperture.
The arrangement mode of described reinforcing rib structure can be waling and is staggered with horizontal reinforcement.
Described reinforcing rib structure can be distributed in the middle part of polysilicon membrane, and the edge that is positioned at polysilicon membrane does not have reinforcing rib structure.
Etch resistant layer can comprise: silicon nitride film, silica membrane resilient coating, one deck silicon nitride film again.
A kind of method for preparing little silicon microphone comprises:
(1) preparation of monocrystalline silicon pole plate;
(2) make insulating barrier and etch resistant layer with deposition process;
(3) utilize ICP that the monocrystalline silicon pole plate is carried out deep etching;
(4) make sacrifice layer with deposition process again, the groove on the partially filled monocrystalline silicon pole plate of sacrifice layer;
(5) carry out the polysilicon membrane deposit, the polysilicon of deposit is filled groove with full back and is formed reinforcing rib structure;
(6) preparation in monocrystalline silicon pole plate back of the body chamber, the groove on the monocrystalline silicon pole plate communicates with back of the body chamber, forms release aperture;
(7) method with sputter makes electrode;
(8) erode sacrifice layer, the polysilicon pole plate obtains discharging;
(9) scribing obtains finished product.
Technique effect of the present invention: the present invention utilizes the ICP technology that the monocrystalline silicon pole plate is carried out deep etching, when ensuing sacrifice layer deposit and polysilicon membrane deposit, by filling the groove on the monocrystalline silicon pole plate, on polysilicon membrane, can form reinforcing rib structure, and this groove is by the preparation and the corrosion sacrifice layer formation release aperture in monocrystalline silicon pole plate back of the body chamber.Shape has reinforcement on polysilicon membrane, can strengthen the intensity of polysilicon membrane, avoid the wave distortion problem that in flat membrane structure, occurs, technological process of the present invention is simple, process compatible is good, the uneconomical step of processing technology is no longer necessary before making, all is beneficial to silicon MEMS technology commonly used at present, and prepared microphone cost is low, structural stress is little, good stability and reliability height.
Description of drawings
The thermal oxidation of Fig. 1 monocrystalline silicon pole plate, photoetching for the first time;
Fig. 2 silica erosion, boron diffusion;
Fig. 3 mask is removed;
Fig. 4 deposit supports insulative layer;
Fig. 5 photoetching, corrosion supports insulative layer;
The deposit of Fig. 6 etch resistant layer, photoetching, etching;
The photoetching of Fig. 7 release aperture, etching;
The deposit of Fig. 8 sacrifice layer, photoetching, etching;
The deposit of Fig. 9 structure sheaf, photoetching, etching;
Figure 10 carries on the back chamber figure photoetching, corrosion;
Figure 11 sacrifice layer corrosion, releasing structure;
Figure 12 is the polysilicon membrane of no reinforcement;
Figure 13 is the polysilicon membrane that has reinforcement.
1, silicon chip, 2, the boron diffusion district, 3, silicon dioxide supports insulative layer, 4, the silicon nitride etch resistant layer, 5, the PSG sacrifice layer, 6, the polysilicon structure layer, 7, reinforcement, 8, release aperture.
Embodiment
With reference to figure 1-Figure 11, the technology Integrated Solution of making little silicon microphone is as follows:
One, the preparation of expanding the monocrystalline silicon pole plate of boron:
1, the required mask material silicon dioxide of boron is expanded in heat growth, and 2, photoetching, 3, erode part silicon dioxide, obtain the silicon dioxide figure, 4, the short time expands the figure that boron obtains the monocrystalline silicon pole plate, 5, erode silicon dioxide as mask.
Two, the making of silicon dioxide insulating layer material:
1, the method with deposit obtains silicon dioxide insulating layer, and 2, photoetching, 3, erode part silicon dioxide, obtain the figure of insulating barrier.
Three, the etch resistant layer material:
1, first deposit silicon nitride, silicon oxide deposition again, then deposit silicon nitride, thus obtain the multilayer silicon nitride etch resistant layer, 2, photoetching, 3, etch away the figure that the part silicon nitride obtains etch resistant layer.
Four, utilize ICP that the monocrystalline silicon pole plate is carried out deep etching:
ICP is the abbreviation of Inductively Coupled Plasma inductively coupled plasma, and this technology is to apply highfield and magnetic field in reacting gas, and then produces high-density plasma, this plasma energy and pasc reaction, thus realization is to the deep etching of silicon;
1, photoetching, 2, with ICP technology etching release aperture, release aperture length is 30 microns, and wide is 10 microns, is 20 microns deeply, and arrangement mode is vertical release aperture and horizontal release aperture is staggered, and each release aperture spacing is 10 microns.
Five, the preparation of sacrificial layer material:
1, the method with deposit obtains sacrifice layer (PSG, phosphorosilicate glass), and 2, photoetching, 3, etch away the figure that part PSG obtains sacrifice layer; In the time of the deposit sacrifice layer, the groove on the monocrystalline silicon pole plate is also partially filled, forms the identical similar groove of the degree of depth.
Six, the preparation of polysilicon pole plate:
1, the method with deposit obtains polysilicon layer, and 2, mix, 3, annealing, 4, photoetching, 5, etch away the figure that the part polysilicon obtains the polysilicon pole plate, the polysilicon of deposit is filled the groove on the sacrifice layer, forms reinforcing rib structure.
Seven, the preparation in back of the body chamber:
1, photoetching, 2, corrosion obtains carrying on the back the chamber, the groove on the monocrystalline silicon pole plate is communicated with the formation release aperture with back of the body chamber.
Eight, the preparation of electrode
1, sputter, 2 photoetching, 3 erode the figure that part metals obtains electrode.
Nine, erode sacrifice layer (PSG), structure obtains discharging:
Sacrifice layer corrosion falls back polysilicon pole plate and is released, but becomes movable plate electrode.
Ten, scribing obtains finished product.
With reference to Figure 12, the polysilicon film surface smoothing of former little silicon microphone.With reference to Figure 13, have reinforcing rib structure on the polysilicon membrane of the present invention, increased the rigidity of film, have less stress.Reinforcement on the polysilicon membrane is corresponding with release aperture, and reinforcement length is 22 microns, and wide is 2 microns, and height is 20 microns, and arrangement mode is also corresponding with release aperture, and for waling and horizontal reinforcement are staggered, the spacing of two reinforcements is 18 microns.In order to have elasticity preferably, reinforcement is distributed in the middle part of monocrystalline silicon thin film, promptly in the scope at 20 microns at polysilicon membrane edge, do not establish reinforcing rib structure.

Claims (6)

1.一种微硅麦克风，包括作为电容极板的单晶硅薄膜和多晶硅薄膜，两膜之间留有空隙，多晶硅薄膜为可动极板，单晶硅薄膜上设有若干个释放孔，在单晶硅薄膜和多晶硅薄膜之间还设有绝缘层，绝缘层上设抗腐蚀层，其特征在于：在多晶硅薄膜上形成加强筋结构，该加强筋结构与单晶硅薄膜上的释放孔相对应，加强筋结构镶嵌在释放孔中。1. A microsilicon microphone, comprising a monocrystalline silicon film and a polysilicon film as a capacitor plate, gaps are left between the two films, the polysilicon film is a movable plate, and the monocrystalline silicon film is provided with several release holes, An insulating layer is also provided between the monocrystalline silicon film and the polycrystalline silicon film, and an anti-corrosion layer is arranged on the insulating layer. Correspondingly, the stiffener structure is embedded in the release hole. 2.如权利要求1所述的微硅麦克风，其特征在于：所述加强筋结构的排列方式为纵向加强筋与横向加强筋交错排列。2. The microsilicon microphone according to claim 1, characterized in that: the rib structure is arranged in a way that the longitudinal ribs and the transverse ribs are alternately arranged. 3.如权利要求1或2所述的微硅麦克风，其特征在于：所述加强筋结构分布在多晶硅薄膜的中部，位于多晶硅薄膜的边缘处没有加强筋结构。3. The microsilicon microphone according to claim 1 or 2, characterized in that: the rib structure is distributed in the middle of the polysilicon film, and there is no rib structure at the edge of the polysilicon film. 4.如权利要求1所述的微硅麦克风，其特征在于：所述抗腐蚀层包括：氮化硅薄膜、二氧化硅薄膜缓冲层、再一层氮化硅薄膜。4. The microsilicon microphone according to claim 1, wherein the anti-corrosion layer comprises: a silicon nitride film, a silicon dioxide film buffer layer, and another silicon nitride film. 5.一种制备微硅麦克风的方法，包括：5. A method for preparing a microsilicon microphone, comprising: (1)单晶硅极板的制备；(1) Preparation of monocrystalline silicon pole plate; (2)用淀积方法制得绝缘层和抗腐蚀层；(2) The insulating layer and the anti-corrosion layer are prepared by a deposition method; (3)利用ICP对单晶硅极板进行深槽刻蚀；(3) Use ICP to etch deep grooves on the single crystal silicon plate; (4)再用淀积方法制得牺牲层，牺牲层部分填充单晶硅极板上的凹槽；(4) A sacrificial layer is prepared by a deposition method, and the sacrificial layer partially fills the grooves on the monocrystalline silicon pole plate; (5)进行多晶硅薄膜淀积，淀积的多晶硅将凹槽填充满后形成加强筋结构；(5) polysilicon film deposition is carried out, and the deposited polysilicon fills the groove to form a rib structure; (6)单晶硅极板背腔的制备，单晶硅极板上的凹槽与背腔相通，形成释放孔；(6) Preparation of the back cavity of the single crystal silicon pole plate, the groove on the single crystal silicon pole plate communicates with the back cavity to form a release hole; (7)用溅射的方法制得电极；(7) make electrode with the method for sputtering; (8)腐蚀掉牺牲层，多晶硅极板得到释放；(8) The sacrificial layer is etched away, and the polysilicon plate is released; (9)划片得到成品。(9) Scribing to obtain the finished product. 6.如权利要求5所述的制备微硅麦克风的方法，其特征在于：抗腐蚀层的制备为：先淀积氮化硅，再淀积氧化硅，接着淀积氮化硅。6. The method for preparing a micro-silicon microphone as claimed in claim 5, characterized in that: the anti-corrosion layer is prepared by depositing silicon nitride first, then depositing silicon oxide, and then depositing silicon nitride.
CNB2004100336381A 2004-04-14 2004-04-14 Microsilicon microphone and its preparing method Expired - Fee Related CN100536608C (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1980492B (en) * 2005-12-07 2011-05-11 歌尔声学股份有限公司 Silicon Microphone Package
CN1960580B (en) * 2005-11-03 2011-06-29 歌尔声学股份有限公司 Encapsulation for silicon microphone suitable to mass-production
CN101355827B (en) * 2007-07-27 2012-01-04 苏州敏芯微电子技术有限公司 Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip
CN102320549A (en) * 2011-07-28 2012-01-18 北京大学 Method for improving stress linearity of film
CN101355828B (en) * 2007-07-27 2012-05-02 苏州敏芯微电子技术有限公司 Monolithic integration method for integrated circuit based on SOI silicon chip and capacitance type micro-silicon microphone, and chip
CN103369450A (en) * 2013-06-25 2013-10-23 歌尔声学股份有限公司 Manufacturing method of waterproof thin sheet used in microphone
CN103686570A (en) * 2013-12-31 2014-03-26 瑞声声学科技(深圳)有限公司 MEMS microphone
CN111908420A (en) * 2019-05-09 2020-11-10 无锡华润上华科技有限公司 Micro-electro-mechanical system device preparation method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1159950C (en) * 2001-12-07 2004-07-28 清华大学 Monolithic integrated capacitive silicon-based micro-microphone and its manufacturing process

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1960580B (en) * 2005-11-03 2011-06-29 歌尔声学股份有限公司 Encapsulation for silicon microphone suitable to mass-production
CN1980492B (en) * 2005-12-07 2011-05-11 歌尔声学股份有限公司 Silicon Microphone Package
CN101355827B (en) * 2007-07-27 2012-01-04 苏州敏芯微电子技术有限公司 Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip
CN101355828B (en) * 2007-07-27 2012-05-02 苏州敏芯微电子技术有限公司 Monolithic integration method for integrated circuit based on SOI silicon chip and capacitance type micro-silicon microphone, and chip
CN102320549A (en) * 2011-07-28 2012-01-18 北京大学 Method for improving stress linearity of film
CN102320549B (en) * 2011-07-28 2014-05-28 北京大学 Method for improving stress linearity of film
CN103369450A (en) * 2013-06-25 2013-10-23 歌尔声学股份有限公司 Manufacturing method of waterproof thin sheet used in microphone
CN103686570A (en) * 2013-12-31 2014-03-26 瑞声声学科技(深圳)有限公司 MEMS microphone
CN103686570B (en) * 2013-12-31 2017-01-18 瑞声声学科技(深圳)有限公司 MEMS (micro electro mechanical system) microphone
CN111908420A (en) * 2019-05-09 2020-11-10 无锡华润上华科技有限公司 Micro-electro-mechanical system device preparation method
CN111908420B (en) * 2019-05-09 2024-02-27 无锡华润上华科技有限公司 Microelectromechanical system device preparation method

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