[go: up one dir, main page]

CN1674102A - Magnetic recording medium, method for manufacturing recording medium and magnetic recording apparatus - Google Patents

Magnetic recording medium, method for manufacturing recording medium and magnetic recording apparatus Download PDF

Info

Publication number
CN1674102A
CN1674102A CNA2005100592999A CN200510059299A CN1674102A CN 1674102 A CN1674102 A CN 1674102A CN A2005100592999 A CNA2005100592999 A CN A2005100592999A CN 200510059299 A CN200510059299 A CN 200510059299A CN 1674102 A CN1674102 A CN 1674102A
Authority
CN
China
Prior art keywords
magnetic recording
mentioned
crystal grain
recording medium
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2005100592999A
Other languages
Chinese (zh)
Other versions
CN1333387C (en
Inventor
前田知幸
喜喜津哲
及川壮一
岩崎刚之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1674102A publication Critical patent/CN1674102A/en
Application granted granted Critical
Publication of CN1333387C publication Critical patent/CN1333387C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/73Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/736Non-magnetic layer under a soft magnetic layer, e.g. between a substrate and a soft magnetic underlayer [SUL] or a keeper layer
    • G11B5/7367Physical structure of underlayer, e.g. texture
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/64Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/657Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/64Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/658Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/73Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7369Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
    • G11B5/737Physical structure of underlayer, e.g. texture

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

提供一种磁记录媒体、记录媒体的制造方法和磁记录装置。在包含Cu晶粒层和Cu晶粒层表面上的淀积氮原子层的垫层上形成磁记录层。从而得到具有非常小的平均晶粒直径和非常窄的晶粒直径分布的磁记录层。包含上述磁记录层的磁记录媒体在高密度记录的条件下表现出优异的信噪比特性。

Provided are a magnetic recording medium, a method for manufacturing the recording medium, and a magnetic recording device. A magnetic recording layer is formed on the underlayer including the Cu crystal grain layer and the deposited nitrogen atom layer on the surface of the Cu crystal grain layer. A magnetic recording layer having a very small average grain diameter and a very narrow grain diameter distribution is thereby obtained. A magnetic recording medium including the above-mentioned magnetic recording layer exhibits excellent signal-to-noise ratio characteristics under high-density recording conditions.

Description

磁记录媒体、记录媒体的 制造方法和磁记录装置Magnetic recording medium, recording medium manufacturing method, and magnetic recording device

对相关申请的交叉引用Cross References to Related Applications

本申请基于在2004年3月25日提交的在先的日本专利申请No.2004-090669,并要求其优先权,在此引用其全部内容作为参考。This application is based on and claims priority from prior Japanese Patent Application No. 2004-090669 filed on March 25, 2004, the entire contents of which are incorporated herein by reference.

技术领域technical field

本发明涉及磁记录媒体、记录媒体的制造方法和磁记录装置,更加具体而言,涉及具有高记录密度的磁记录媒体、这种记录媒体的制造方法和诸如其中配备高密度记录媒体的硬盘驱动器等磁记录装置。The present invention relates to a magnetic recording medium, a method for manufacturing the recording medium, and a magnetic recording device, and more particularly, to a magnetic recording medium having a high recording density, a method for manufacturing such a recording medium, and a hard disk drive such as a high-density recording medium equipped therein Isomagnetic recording device.

背景技术Background technique

作为用于记录和再现信息的磁记录系统,硬盘驱动器(HDD)的应用领域已从最初的与计算机有关的应用领域扩展到诸如家庭录像机和车载导航系统的各种其它应用领域。除了具有较高的记录容量和较低的成本外,硬盘驱动器的应用领域得到扩展还由于其具有较高的数据存取速度、较高的数据存储可靠性等优点。随着HDD应用领域的扩展,对于具有更大的记录容量的HDD的需求不断增加。为了满足这种需求,已通过增加磁记录媒体的记录密度开发了大容量记录技术。As a magnetic recording system for recording and reproducing information, the application fields of hard disk drives (HDDs) have been expanded from the original computer-related application fields to various other application fields such as home video recorders and car navigation systems. In addition to having a higher recording capacity and lower cost, the application field of the hard disk drive has been expanded due to its advantages such as high data access speed and high data storage reliability. As the field of application of HDDs expands, the demand for HDDs with greater recording capacity is increasing. In order to meet such demands, large-capacity recording technologies have been developed by increasing the recording density of magnetic recording media.

随着HDD的磁记录媒体的记录密度的增加,记录位尺寸和磁化反向单元的直径变得非常小。结果,由小尺寸磁化反向单元导致的热波动效应所产生的记录信号磁化和记录和再现性能的热降现象变得十分明显。此外,随着记录位的尺寸缩小到十分小的尺寸,记录位之间的边界区域出现的噪声信号变大,并且噪声变成对信噪比产生较大的影响。因此,为了得到更高的记录密度,需要一方面稳定记录信号磁化的热稳定性,另一方面在较高的记录密度条件下得到较低的噪声特性。As the recording density of the magnetic recording medium of the HDD increases, the recording bit size and the diameter of the magnetization inversion unit become extremely small. As a result, the phenomenon of thermal drop in recording signal magnetization and recording and reproducing performance due to the thermal fluctuation effect caused by the small-sized magnetization inversion unit becomes conspicuous. Furthermore, as the size of recording bits is reduced to a sufficiently small size, noise signals appearing in boundary regions between recording bits become larger, and the noise becomes to have a greater influence on the signal-to-noise ratio. Therefore, in order to obtain a higher recording density, it is necessary to stabilize the thermal stability of the magnetization of the recording signal on the one hand, and to obtain lower noise characteristics under the condition of a higher recording density on the other hand.

为了降低磁记录媒体噪声,构成记录层的磁性晶粒的尺寸至今已变得更小。例如,通过添加少量的Ta或B(参见日本专利申请公报No.平11-154321和2003-338029),以及通过在适当的温度下进行热处理从而析出非磁性的Cr(参见日本专利申请公报No.平3-235218和平6-259764),将应用广泛的磁记录媒体的Co-Cr磁性层的磁性晶粒制成非常小的尺寸。最近,采用用于得到具有通过在磁性层中添加诸如SiOx的氧化物而得到的所谓粒状结构的磁记录层的方法。在该粒状结构的磁性层中,非磁性粒界材料包围磁性晶粒(参见日本专利申请公报No.平10-92637和2001-56922)。In order to reduce noise in magnetic recording media, the size of magnetic crystal grains constituting a recording layer has heretofore been made smaller. For example, non-magnetic Cr is precipitated by adding a small amount of Ta or B (see Japanese Patent Application Publication No. 11-154321 and 2003-338029), and by heat treatment at an appropriate temperature (see Japanese Patent Application Publication No. Hei 3-235218 and Hei 6-259764), the magnetic crystal grains of the Co-Cr magnetic layer of the widely used magnetic recording medium are made into a very small size. Recently, a method for obtaining a magnetic recording layer having a so-called granular structure obtained by adding an oxide such as SiOx to the magnetic layer is employed. In the magnetic layer of this granular structure, non-magnetic grain boundary material surrounds magnetic crystal grains (see Japanese Patent Application Publication Nos. Hei 10-92637 and 2001-56922).

但是,这些方法不能通过返回到垫层和磁记录层的晶粒的成核阶段来控制磁性层和垫层的晶粒。这些方法仅通过选择原材料的组合、原材料成分或通过选择淀积条件来控制平均磁性晶粒直径和粒界区。当设法将垫层中的晶粒直径减小到更小的尺寸时,就会降低垫层中的晶粒的结晶质量和晶粒取向度,而垫层晶粒的结晶质量下降会对磁性晶粒的形成产生影响。However, these methods cannot control the crystal grains of the magnetic layer and the under layer by going back to the nucleation stage of the crystal grains of the under layer and the magnetic recording layer. These methods control the average magnetic grain diameter and grain boundary region only by selecting the combination of raw materials, the composition of the raw materials or by selecting the deposition conditions. When trying to reduce the diameter of the grains in the underlayer to a smaller size, the crystallization quality and grain orientation of the grains in the underlayer will be reduced, and the decrease in the crystalline quality of the underlayer grains will have a negative impact on the magnetic crystal grains. affect particle formation.

事实上,已经发现用这种方法制备的磁性层的晶粒尺寸和粒界宽度的分布范围较宽。磁性晶粒的平均晶粒尺寸降低到5nm的磁记录媒体表现出很差的热波动耐用性。对于热波动不稳定的很小尺寸直径的晶粒的比例很高。因此很难用这种方法得到更高的记录密度。In fact, it has been found that magnetic layers prepared in this way have a wide distribution of grain size and grain boundary width. The magnetic recording medium in which the average grain size of the magnetic crystal grains was reduced to 5 nm exhibited poor thermal fluctuation durability. The proportion of very small diameter grains unstable to thermal fluctuations is high. Therefore, it is difficult to obtain a higher recording density by this method.

发明内容Contents of the invention

为了得到高记录密度的磁记录媒体,需要得到不受热波动影响的记录磁化稳定性并得到高记录密度条件下的低噪声性能。那么,要得到较高的记录密度,需要解决两个问题。要解决的一个问题是,通过减小磁性层中的磁性晶粒的平均直径,得到低噪声性能。要解决的另一个问题是,通过得到不包含容易受热波动影响的太小的晶粒的磁性晶粒的较小的晶粒尺寸分布,得到热稳定性。In order to obtain a magnetic recording medium with high recording density, it is necessary to obtain recording magnetization stability not affected by thermal fluctuations and to obtain low noise performance under high recording density conditions. Then, to obtain a higher recording density, two problems need to be solved. One problem to be solved is to obtain low noise performance by reducing the average diameter of magnetic crystal grains in the magnetic layer. Another problem to be solved is to obtain thermal stability by obtaining a smaller grain size distribution of magnetic grains that does not contain too small grains susceptible to thermal fluctuations.

作为为得到这些问题的解决方案而进行的长期探索工作的结果,本发明的发明人已有重要发现。该发现是,当垫层是带有氮原子的薄淀积层的Cu金属膜时,所制成的磁性层的磁性晶粒的尺寸可以很小,且晶粒尺寸分布十分窄。在进行进一步的研究后,发明人解决了上述问题并完成本发明。The inventors of the present invention have made important discoveries as a result of long-term search work for solutions to these problems. The finding is that when the underlayer is a Cu metal film with a thin deposited layer of nitrogen atoms, the resulting magnetic layer can have a small magnetic grain size and a very narrow grain size distribution. After conducting further studies, the inventors solved the above-mentioned problems and completed the present invention.

本发明的磁记录媒体包括:衬底、在衬底上形成的垫层、垫层上的磁记录层和在磁记录层上形成的保护层。垫层包括含有Cu晶粒的晶粒直径控制垫层和在晶粒直径控制垫层上形成的氮原子的淀积层。The magnetic recording medium of the present invention includes a substrate, an underlayer formed on the substrate, a magnetic recording layer on the underlayer, and a protective layer formed on the magnetic recording layer. The underlayer includes a grain diameter controlling underlayer containing Cu crystal grains and a deposition layer of nitrogen atoms formed on the grain diameter controlling underlayer.

本发明的磁记录媒体的制造方法包括以下步骤:在衬底上形成含有Cu晶粒的晶粒直径控制垫层,在晶粒直径控制垫层表面上形成淀积氮的氮原子的淀积层,和在具有在晶粒直径控制垫层上淀积的氮层的衬底上形成磁记录层。The manufacture method of the magnetic recording medium of the present invention comprises the steps of: forming a grain diameter control cushion layer containing Cu crystal grains on a substrate, forming a deposition layer of nitrogen atoms depositing nitrogen on the surface of the grain diameter control cushion layer , and a magnetic recording layer is formed on the substrate having the nitrogen layer deposited on the grain diameter control underlayer.

并且,本发明的磁记录和再现装置包括:上述磁记录媒体、用于驱动磁记录媒体的记录媒体驱动机构、用于将信息记录到磁记录媒体上并从磁记录媒体上再现信息的记录和再现磁头机构、用于驱动记录和再现磁头的磁头驱动机构和用于处理记录信号和再现信号的记录和再现信号处理系统。And, the magnetic recording and reproducing apparatus of the present invention includes: the above-mentioned magnetic recording medium, a recording medium drive mechanism for driving the magnetic recording medium, a recording and reproducing mechanism for recording information on the magnetic recording medium and reproducing information from the magnetic recording medium. A reproducing head mechanism, a head driving mechanism for driving recording and reproducing heads, and a recording and reproducing signal processing system for processing recording signals and reproducing signals.

在本发明中,垫层晶粒Cu的晶粒尺寸不需要很小。因此可以避免使用小晶粒尺寸垫层得到小磁性晶粒的现有方法中所遇到的问题,这样,可以根据本发明得到具有改进的记录和再现特性的记录媒体。本发明的包含Cu晶粒的晶粒直径控制垫层可以包含能够发挥本发明的优点的其它元素。In the present invention, the grain size of Cu of the under layer grains does not need to be small. The problems encountered in the prior art methods of obtaining small magnetic grains using a small grain size underlayer can thus be avoided, so that a recording medium having improved recording and reproducing characteristics can be obtained according to the present invention. The grain diameter controlling underlayer containing Cu crystal grains of the present invention may contain other elements capable of exerting the advantages of the present invention.

目前,还不清楚通过使用氮淀积Cu金属膜垫层得到小尺寸晶粒的详细机制。这里,将介绍两篇文章,并对本发明和这两篇文章进行简单的比较。At present, the detailed mechanism of obtaining small-sized grains by depositing a Cu metal film underlayer by using nitrogen is unclear. Here, two articles will be introduced and a simple comparison will be made between the present invention and the two articles.

在表面科学(Surface Science)第523卷第189-198页(2003)中出现的一篇文章中,报道了由具有氮吸附的区域和不具有吸附的区域构成的交替配置的表面结构。在10-9Pa的超真空下净化处理后,在大块单晶Cu表面上吸附氮原子。In an article appearing in Surface Science, Vol. 523, pp. 189-198 (2003), an alternately configured surface structure consisting of regions with nitrogen adsorption and regions without adsorption is reported. Nitrogen atoms were adsorbed on the surface of bulk single crystal Cu after purification treatment under ultra-vacuum of 10 -9 Pa.

在材料科学与工程(Material Science and Engineering)第B96卷第169-177页(2002)中出现的另一篇文章中,对单晶Cu表面上的氮原子的有序排列进行了解释。将有序排列解释为由于在大块Cu单晶的清洁表面上出现的应力相互作用而产生的自组织结构。In another article appearing in Material Science and Engineering, Vol. B96, pp. 169-177 (2002), the ordered arrangement of nitrogen atoms on the surface of single crystal Cu is explained. The ordered arrangement is interpreted as a self-organized structure due to stress interactions arising on the clean surface of bulk Cu single crystals.

将这两篇文章与本发明相比较,可以看出,本发明中的含有Cu晶粒的晶粒直径控制垫层不是大块单晶而是薄膜。因此,本发明中的薄膜具有的应力状态与这些文章中的大块Cu单晶的表面十分不同。因此,对于本发明的薄膜,不能期望总能出现这些文章中的再取向的有序表面结构。目前,本发明用于得到小晶粒尺寸的机制还不清楚。发现本发明的机制是需要解决的重要问题。根据本发明,所制成的磁性层的磁性晶粒可以很小,并可以得到具有提高的信噪比、高密度记录的磁记录媒体。Comparing these two articles with the present invention, it can be seen that the grain diameter control underlayer containing Cu crystal grains in the present invention is not a bulk single crystal but a thin film. Thus, the thin films in the present invention have a stress regime quite different from the surface of bulk Cu single crystals in these articles. Thus, the reoriented ordered surface structures of these articles cannot always be expected for the films of the invention. At present, the mechanism by which the present invention is used to obtain the small grain size is unclear. Discovering the mechanism of the present invention is an important problem to be solved. According to the present invention, the magnetic grains of the magnetic layer produced can be very small, and a magnetic recording medium with improved signal-to-noise ratio and high-density recording can be obtained.

附图说明Description of drawings

图1是根据本发明的实施例的磁记录媒体的示意性断面图。FIG. 1 is a schematic cross-sectional view of a magnetic recording medium according to an embodiment of the present invention.

图2是根据本发明的实施例、包含用于控制衬底和晶粒直径控制垫层之间的Cu晶粒的取向的取向控制垫层的磁记录媒体的示意性断面图。2 is a schematic cross-sectional view of a magnetic recording medium including an orientation control underlayer for controlling the orientation of Cu grains between a substrate and a grain diameter control underlayer according to an embodiment of the present invention.

图3是用于表示根据本发明的实施例、以四方晶格结构的形式排列的磁性晶粒的磁记录媒体用磁记录层的示意性面内图。3 is a schematic in-plane view of a magnetic recording layer for a magnetic recording medium showing magnetic crystal grains arranged in a tetragonal lattice structure according to an embodiment of the present invention.

图4是四方晶格结构的倒易晶格的环形图案的示意性例子。Fig. 4 is a schematic example of a ring pattern of a reciprocal lattice of a tetragonal lattice structure.

图5是根据本发明的实施例、具有中间垫层的磁记录媒体的示意性断面图。5 is a schematic cross-sectional view of a magnetic recording medium having an underlayer according to an embodiment of the present invention.

图6是根据本发明的实施例、具有软磁性垫层的磁记录媒体的示意性断面图。6 is a schematic cross-sectional view of a magnetic recording medium having a soft magnetic underlayer according to an embodiment of the present invention.

图7是根据本发明的实施例、具有软磁性垫层用的偏磁层的磁记录媒体的断面图。7 is a cross-sectional view of a magnetic recording medium having a bias layer for a soft magnetic underlayer according to an embodiment of the present invention.

图8是根据本发明的实施例的磁记录装置的示意性斜视图,用于通过部分地去除盖子说明其构造。FIG. 8 is a schematic oblique view of the magnetic recording apparatus according to the embodiment of the present invention for explaining its configuration by partially removing the cover.

图9表示例子1的单位面积的淀积氮原子的数量与磁记录层的平均晶粒直径之间的关系。FIG. 9 shows the relationship between the number of deposited nitrogen atoms per unit area and the average crystal grain diameter of the magnetic recording layer in Example 1. FIG.

图10表示Cu晶粒的平均直径与磁记录层中的磁性晶粒的平均直径之间的关系。FIG. 10 shows the relationship between the average diameter of Cu crystal grains and the average diameter of magnetic crystal grains in the magnetic recording layer.

图11表示例子1的磁记录层的单位面积的磁性晶粒的数量与磁记录层的微分波形的信噪比(SNRm)的关系。11 shows the relationship between the number of magnetic crystal grains per unit area of the magnetic recording layer of Example 1 and the signal-to-noise ratio (SNR m ) of the differential waveform of the magnetic recording layer.

具体实施方式Detailed ways

以下,参照附图详细说明本发明的实施例。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

图1是根据本发明的实施例的磁记录媒体的示意性断面图。在图1中,在衬底11上设置晶粒直径控制用Cu薄膜垫层12a。在直径控制垫层12a上形成氮原子的淀积层12b。在氮原子的淀积层12b上形成磁记录层14,并在磁记录层14上形成保护和润滑层15。FIG. 1 is a schematic cross-sectional view of a magnetic recording medium according to an embodiment of the present invention. In FIG. 1 , on a substrate 11 , a Cu thin film cushion layer 12 a for grain diameter control is provided. A deposition layer 12b of nitrogen atoms is formed on the diameter control pad layer 12a. A magnetic recording layer 14 is formed on the deposited layer 12b of nitrogen atoms, and a protective and lubricating layer 15 is formed on the magnetic recording layer 14.

如果用单位面积的平均原子数表示,则晶粒直径控制垫层12a的表面上的氮原子的淀积层12b所需的单位面积的淀积氮原子数量是1×1013~1×1015原子/cm2。当该数量小于1×1013原子/cm2时,在磁记录层上不能产生明显的平均晶粒直径减小效应。并且,实验结果表明,当该数量大于1×1015原子/cm2时,磁记录层的磁性晶粒取向度降低。淀积的氮原子的数量优选为5×1013~5×1014原子/cm2If represented by the average number of atoms per unit area, the number of deposited nitrogen atoms per unit area required for the deposition layer 12b of nitrogen atoms on the surface of the crystal grain diameter control pad layer 12a is 1×10 13 to 1×10 15 atoms/cm 2 . When the amount is less than 1×10 13 atoms/cm 2 , no significant effect of reducing the average grain diameter can be produced on the magnetic recording layer. Also, experimental results show that when the number is greater than 1×10 15 atoms/cm 2 , the degree of magnetic grain orientation of the magnetic recording layer decreases. The number of deposited nitrogen atoms is preferably 5×10 13 to 5×10 14 atoms/cm 2 .

可以用二次离子质谱(SIMS)法估算氮原子的淀积层12b上的氮原子的数量。要估算氮原子的数量,也可以采用使用H+12C的核反应分析法(NRA)、卢瑟福背散射法、X射线光电子分光法(XPS)、俄歇电子分光法(AES)等其它方法。并且,要进行这种估算,也可以使用应用物理快报(Applied Physics Letters)第69卷第3095-3097页中所述的原子探针法。The amount of nitrogen atoms on the deposited layer 12b of nitrogen atoms can be estimated by secondary ion mass spectrometry (SIMS). To estimate the number of nitrogen atoms, nuclear reaction analysis (NRA) using H + or 12 C, Rutherford backscattering, X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), etc. method. Also, for such estimation, the atom probe method described in Applied Physics Letters, Vol. 69, pp. 3095-3097 can also be used.

作为用于在晶粒直径控制垫层12a的表面上淀积氮原子的方法,可以使用在淀积氮原子或氮原子团后暴露晶粒直径控制垫层12a的方法。也可以使用辐射氮离子以使其到达晶粒直径控制垫层12a或在氮气氛中溅射Cu表面等其它方法。并且,可以使用将表面暴露于NH4气氛中并然后去除H的方法。As a method for depositing nitrogen atoms on the surface of the grain diameter controlling under layer 12a, a method of exposing the grain diameter controlling under layer 12a after depositing nitrogen atoms or nitrogen atom groups can be used. Other methods such as irradiating nitrogen ions to reach the grain diameter controlling under layer 12a or sputtering the Cu surface in a nitrogen atmosphere may also be used. And, a method of exposing the surface to NH4 atmosphere and then removing H can be used.

晶粒直径控制垫层12a所需的Cu晶粒具有用于得到具有良好结晶性的磁记录层14的较宽的平整表面。因此,要求Cu晶粒具有较大的平均晶粒直径。Cu晶粒的所需平均晶粒直径为50nm或更大,并且优选直径为100nm或更大。更优选没有粒界的单晶膜。当Cu膜在一定程度上不平滑时,如果该膜具有较大部分的形成膜表面的阶梯表面,可以得到该膜。The Cu crystal grains required for the grain diameter control under layer 12a have a wide flat surface for obtaining the magnetic recording layer 14 with good crystallinity. Therefore, Cu grains are required to have a larger average grain diameter. The desired average grain diameter of the Cu crystal grains is 50 nm or more, and the diameter is preferably 100 nm or more. A single crystal film having no grain boundaries is more preferable. When the Cu film is not smooth to some extent, the film can be obtained if the film has a larger portion of the stepped surface forming the film surface.

由于在磁记录层14内可以得到较高的磁性晶粒取向度,所以需要其中各Cu晶粒的相同晶面的取向与相同平面平行的晶粒直径控制垫层12a。要在磁记录层14内得到十分小的磁性晶粒,就特别需要其中各Cu晶粒的各(100)面的取向与衬底表面平行的晶粒直径控制垫层。Since a high degree of magnetic grain orientation can be obtained in the magnetic recording layer 14, the grain diameter control under layer 12a in which the orientation of the same crystal plane of each Cu crystal grain is parallel to the same plane is required. To obtain very small magnetic crystal grains in the magnetic recording layer 14, a grain diameter control underlayer in which each (100) plane of each Cu crystal grain is oriented parallel to the substrate surface is particularly required.

如图2所示,可以在衬底11和晶粒直径控制垫层12a之间设置用于增加晶粒直径控制垫层12a中的Cu晶粒的(100)面取向度的取向控制垫层12c。作为取向控制垫层12c,可以使用选自NiAl、MnAl、MgO、NiO、TiN、Si和Ge的至少一种材料。不必直接邻近于晶粒直径控制垫层12a设置取向控制垫层12c,而可以通过中间层进行设置。As shown in FIG. 2, an orientation control underlayer 12c for increasing the (100) plane orientation of Cu crystal grains in the grain diameter control underlayer 12a can be provided between the substrate 11 and the grain diameter control underlayer 12a . As the orientation control under layer 12c, at least one material selected from NiAl, MnAl, MgO, NiO, TiN, Si, and Ge can be used. The orientation control under layer 12c need not be provided directly adjacent to the grain diameter control under layer 12a, but may be provided through an intermediate layer.

晶粒直径控制层12a的每一个Cu晶粒平均形成多个磁记录层14中的磁性晶粒。要得到记录信号的较大的再现输出,磁记录层14中的磁性晶粒的所需平均面密度为1×1012~8×1012晶粒/cm2。当磁性晶粒的平均面密度小于1×1012晶粒/cm2时,SNR降低。当平均面密度高于8×1012晶粒/cm2时SNR也降低。Each Cu crystal grain of the grain diameter control layer 12 a forms a plurality of magnetic crystal grains in the magnetic recording layer 14 on average. To obtain a large reproduction output of recording signals, the required average areal density of magnetic crystal grains in the magnetic recording layer 14 is 1×10 12 to 8×10 12 crystal grains/cm 2 . When the average areal density of the magnetic crystal grains is less than 1×10 12 grains/cm 2 , the SNR decreases. SNR also decreases when the average areal density is higher than 8×10 12 grains/cm 2 .

从本发明的发明人的实验结果可以看出,当将磁性晶粒实质上排列成四方晶格的有序结构时,可以大大减少记录和再现特性的噪声水平并使之符合要求。From the experimental results of the inventors of the present invention, it can be seen that when the magnetic crystal grains are substantially arranged in an ordered structure of a tetragonal lattice, the noise level of the recording and reproducing characteristics can be greatly reduced and made satisfactory.

图3是根据本发明的实施例的磁记录媒体的示意性面内结构。白色物体表示磁性晶粒1。可以通过图像处理和分析磁记录层14的膜面的透射电子显微镜(TEM)图像对磁性晶粒1的四方晶格结构排列的存在进行确认。FIG. 3 is a schematic in-plane structure of a magnetic recording medium according to an embodiment of the present invention. White objects represent magnetic grains 1 . The presence of the tetragonal lattice structure arrangement of the magnetic crystal grains 1 can be confirmed by image processing and analyzing a transmission electron microscope (TEM) image of the film surface of the magnetic recording layer 14 .

使用图像处理和分析软件,作为通过增加磁性晶粒和粒界区的图像对比度得到的二元图像的快速傅立叶变换的结果,可以得到光谱。当基本上可以在光谱中发现图4所示的图案时,就可以将磁性晶粒看作具有四方晶格结构的排列。事实上,两种类型的周期点或环到中心的距离的比值为1∶1/ (图4中为R1

Figure A20051005929900112
)。可以通过对磁记录层使用低能电子衍射并对衍射图案进行分析,进行类似的评价。Using image processing and analysis software, spectra can be obtained as a result of fast Fourier transformation of the binary image obtained by increasing the image contrast of the magnetic grain and grain boundary regions. When essentially the pattern shown in Figure 4 can be found in the spectrum, the magnetic grains can be considered as an arrangement with a tetragonal lattice structure. In fact, the ratio of the distances of the two types of periodic points or rings to the center is 1:1/ (R 1 and
Figure A20051005929900112
). Similar evaluation can be performed by using low-energy electron diffraction on the magnetic recording layer and analyzing the diffraction pattern.

对于本发明的磁记录媒体,需要具有粒状结构的磁记录层14。磁记录层14中的具有非磁性粒界区的粒状结构导致磁性晶粒之间的交换相互作用降低,并导致记录和再现特性的转变噪声明显降低。For the magnetic recording medium of the present invention, the magnetic recording layer 14 having a granular structure is required. The granular structure having the non-magnetic grain boundary region in the magnetic recording layer 14 leads to a reduction in exchange interaction between magnetic crystal grains, and to a marked reduction in transition noise of recording and reproducing characteristics.

需要Co-Cr和Co-Pt等的无序合金、Fe-Pt、Co-Pt和Fe-Pd等有序合金、以及Co/Pt和Co/Pd等的多层膜作为用作磁记录层14的材料。需要这些合金和多层膜是因为它们具有较高的晶体各向异性能量并因而具有较高的热波动耐用性。如果需要,可以通过添加Cu、B和Cr等添加元素,改进这些合金和多层的磁性性能。也可以使用CoCrPt、CoCrPtB、CoCrPtTa、CoCrPtNd、CoCrPtCu和FePtCu合金作为磁记录层14的材料。Disordered alloys such as Co-Cr and Co-Pt, ordered alloys such as Fe-Pt, Co-Pt and Fe-Pd, and multilayer films such as Co/Pt and Co/Pd are required as the magnetic recording layer 14. s material. These alloys and multilayer films are desired because of their higher crystalline anisotropy energy and thus higher thermal swing durability. The magnetic properties of these alloys and multilayers can be improved by adding additional elements such as Cu, B, and Cr, if desired. CoCrPt, CoCrPtB, CoCrPtTa, CoCrPtNd, CoCrPtCu, and FePtCu alloys can also be used as the material of the magnetic recording layer 14 .

作为用于形成粒状结构的粒界区的材料,需要氧化物和碳化物等化合物,因为这些化合物不与上述形成磁性晶粒的材料形成固溶体,且很容易被分离。对于形成粒界区的化合物,可以举出SiOx、TiOx、CrOx、AlOx、MgOx、TaOx、SiCx、TiCx和TaCx等化合物。As a material for forming the grain boundary region of the granular structure, compounds such as oxides and carbides are required because these compounds do not form a solid solution with the above-mentioned magnetic grain-forming materials and are easily separated. Compounds forming grain boundary regions include compounds such as SiOx , TiOx , CrOx , AlOx , MgOx , TaOx , SiCx , TiCx , and TaCx .

磁记录层14可以为双层结构或多层结构。在这种情况下,这些双层或多层结构中的至少一层具有上述结构。The magnetic recording layer 14 may have a double-layer structure or a multi-layer structure. In this case, at least one layer of these two-layer or multi-layer structures has the above-mentioned structure.

如图5所示,除了晶粒直径控制垫层12a以及淀积氮层12b和取向控制垫层12c以外,还可以设置用于控制磁记录层14的特性的中间垫层12d。As shown in FIG. 5, an intermediate pad layer 12d for controlling the characteristics of the magnetic recording layer 14 may be provided in addition to the grain diameter control pad layer 12a and the deposited nitrogen layer 12b and orientation control pad layer 12c.

通过将粒状结构层用作中间垫层12d,可以改善晶体取向度。除了较小的平均晶粒尺寸和较小的晶粒直径分布外,晶体取向度的改善也可以改善记录和再现特性。By using the granular structure layer as the intermediate cushion layer 12d, the degree of crystal orientation can be improved. In addition to a smaller average grain size and a smaller grain diameter distribution, an improvement in the degree of crystal orientation can also improve recording and reproduction characteristics.

作为具有粒状结构的中间垫层12d的非磁性晶体材料,可以举出Pt、Pd、Ir、Ag、Cu、Ru和Rh。需要这些金属材料是因为这些金属材料与上述的磁性晶粒具有良好的晶格相容性并可以改善晶体取向度。As the non-magnetic crystal material of the intermediate pad layer 12d having a granular structure, Pt, Pd, Ir, Ag, Cu, Ru, and Rh can be cited. These metallic materials are required because they have good lattice compatibility with the aforementioned magnetic crystal grains and can improve the degree of crystal orientation.

作为用于形成中间垫层12d的粒界区的材料,需要氧化物和碳化物等化合物。将这些化合物用作用于形成粒界区的材料是因为这些化合物不与上述形成磁性晶粒的非磁性晶体材料形成共溶体,并且容易进行分离。对于形成粒界区的化合物,可以举出SiOx、TiOx、CrOx、AlOx、MgOx、TaOx、SiCx、TiCx和TaCx等化合物。当垫层在整体上不具有磁性时,构成垫层的材料可以包含磁性金属。Compounds such as oxides and carbides are required as materials for forming the grain boundary region of the intermediate pad layer 12d. These compounds are used as the material for forming the grain boundary region because these compounds do not form a eutectic solution with the above-mentioned nonmagnetic crystal grain-forming material and are easily separated. Compounds forming grain boundary regions include compounds such as SiOx , TiOx , CrOx , AlOx , MgOx , TaOx , SiCx , TiCx , and TaCx . When the underlayer is not magnetic as a whole, the material constituting the underlayer may contain a magnetic metal.

可以将具有粒状结构的中间垫层12d构成为两层或更多层的多层。不需要邻近于磁记录层14设置该层。The intermediate cushion layer 12d having a granular structure may be constituted as a multilayer of two or more layers. This layer need not be provided adjacent to the magnetic recording layer 14 .

当如图6所示在各垫层和衬底11之间设置软磁性垫层16时,将本发明的磁记录媒体用作垂直磁记录媒体。When a soft magnetic underlayer 16 is provided between each underlayer and the substrate 11 as shown in FIG. 6, the magnetic recording medium of the present invention is used as a perpendicular magnetic recording medium.

可以在包含在软磁性层16上设置的磁记录层14的所谓垂直双层媒体的上述磁记录媒体中设置软磁性垫层16。软磁性垫层16通过返回由从单极磁头出发、水平穿过磁记录媒体、并返回磁头的记录磁场产生的磁通量,分享磁头的部分功能。因此,在磁记录媒体中设置的软磁性垫层16具有为磁记录层14提供具有足够幅度的陡峭垂直磁场的作用。The soft magnetic backing layer 16 may be provided in the above-mentioned magnetic recording medium of the so-called perpendicular dual-layer medium including the magnetic recording layer 14 provided on the soft magnetic layer 16 . The soft magnetic backing layer 16 shares part of the function of the magnetic head by returning the magnetic flux generated by the recording magnetic field from the monopolar magnetic head, across the magnetic recording medium horizontally, and back to the magnetic head. Therefore, the soft magnetic backing layer 16 provided in the magnetic recording medium has the function of providing the magnetic recording layer 14 with a steep vertical magnetic field with sufficient amplitude.

作为软磁性垫层16,例如,可以举出CoZrNb、FeSiAl、FeTaC、CoTaC、NiFe、Fe、FeCoB、FeCoN和FeTaN。Examples of the soft magnetic underlayer 16 include CoZrNb, FeSiAl, FeTaC, CoTaC, NiFe, Fe, FeCoB, FeCoN, and FeTaN.

如图7所示,可以在软磁性垫层16和衬底11之间设置例如基本上包含硬的面内磁体层和反铁磁性材料层的偏磁层17。在软磁性垫层16中很容易形成磁畴,并且磁畴会导致峰值状的噪声。通过沿偏磁层17的径向施加磁场并对设置在偏磁层17上的软磁性垫层16施加偏磁场,可以避免磁畴的形成。要避免形成较大的磁畴,偏磁层可以为具有弥散的各向异性场的多层结构。As shown in FIG. 7, a bias layer 17, for example substantially comprising a hard in-plane magnet layer and an antiferromagnetic material layer, may be disposed between the soft magnetic backing layer 16 and the substrate 11. Magnetic domains are easily formed in the soft magnetic underlayer 16, and the magnetic domains cause peak-like noise. By applying a magnetic field in the radial direction of the bias layer 17 and applying a bias field to the soft magnetic underlayer 16 provided on the bias layer 17, the formation of magnetic domains can be avoided. To avoid the formation of larger magnetic domains, the bias layer can be a multilayer structure with a diffuse anisotropic field.

作为构成偏磁层17的材料,可以举出CoCrPt、CoCrPtB、CoCrPtTa、CoCrPtTaNd、CoSm、CoPt、FePt、CoPtO、CoPtCrO、CoPt-SiO2、CoCrPt-SiO2和CoCrPtO-SiO2Examples of the material constituting the bias layer 17 include CoCrPt, CoCrPtB, CoCrPtTa, CoCrPtTaNd, CoSm, CoPt, FePt, CoPtO, CoPtCrO, CoPt-SiO 2 , CoCrPt-SiO 2 and CoCrPtO-SiO 2 .

如图6和图7所示,为了改善晶粒的Cu晶粒的(100)面晶体取向度,可以设置上述取向控制层12c。As shown in FIGS. 6 and 7 , in order to improve the (100) plane crystal orientation degree of the Cu crystal grains of the crystal grains, the above-mentioned orientation control layer 12 c may be provided.

可将玻璃衬底、具有氧化物表面的Al合金衬底或Si单晶衬底、陶瓷衬底和塑料衬底用作衬底11。并且,可以使用例如用NiP镀层的无机物衬底。A glass substrate, an Al alloy substrate having an oxide surface or a Si single crystal substrate, a ceramic substrate, and a plastic substrate can be used as the substrate 11 . Also, an inorganic substrate plated with NiP, for example, can be used.

可以在磁记录层14上形成保护层15。作为保护层15,可以使用石墨或金刚石类碳。作为保护层材料,可以举出SiNx、SiOx和CNx等其它材料。A protective layer 15 may be formed on the magnetic recording layer 14 . As the protective layer 15, graphite or diamond-like carbon can be used. Examples of the protective layer material include other materials such as SiNx , SiOx , and CNx .

作为淀积上述各层的方法,可以使用真空蒸汽法、各种溅射方法、分子束外延法、离子束蒸汽法、激光烧蚀法和化学汽相淀积法。As a method of depositing the above-mentioned layers, a vacuum vapor method, various sputtering methods, molecular beam epitaxy, ion beam vapor method, laser ablation method, and chemical vapor deposition method can be used.

图8是根据本发明的实施例的磁记录装置的示意性斜视图,用于通过部分地去除盖子说明其构造。FIG. 8 is a schematic oblique view of the magnetic recording apparatus according to the embodiment of the present invention for explaining its configuration by partially removing the cover.

在图8中,在主轴82上固定根据本发明的磁盘81,并由图中未示出的主轴马达以恒定的速度驱动该磁盘。在由两个薄板状的板簧构成的悬梁84的顶端,固定用于携带接触磁盘81的表面的用于记录信息的记录磁头和用于再现记录信息的MR磁头的滑块83。悬梁84与悬梁臂85的一边连接,该悬梁臂具有容纳图中未示出的驱动线圈的线轴(bobbin)。In FIG. 8, a magnetic disk 81 according to the present invention is fixed on a spindle 82 and driven at a constant speed by a spindle motor not shown in the figure. At the tip of a suspension beam 84 composed of two thin-plate-shaped leaf springs, a slider 83 for carrying a recording head for recording information and an MR head for reproducing recorded information contacting the surface of the magnetic disk 81 is fixed. The cantilever 84 is connected to one side of a cantilever arm 85 having a bobbin accommodating a driving coil not shown in the figure.

在悬梁臂85的另一边,设置音圈马达86,该音圈马达86是一种线性马达。由包含缠绕到悬梁臂85的线轴上的驱动线圈、永久磁体和相反的磁轭的磁路构成音圈马达86。On the other side of the cantilever arm 85, a voice coil motor 86 is provided, which is a kind of linear motor. The voice coil motor 86 is constituted by a magnetic circuit including a drive coil wound onto a bobbin of the cantilever arm 85 , a permanent magnet and an opposing yoke.

悬梁臂85由图中未示出的滚珠轴承支撑,并由音圈马达86驱动以产生循环摆动动作。由音圈马达86控制磁盘81上的滑块83的位置。在图8中,示出盖子88的一部分。The cantilever arm 85 is supported by ball bearings not shown in the figure, and is driven by a voice coil motor 86 to generate cyclic swinging motion. The position of the slider 83 on the magnetic disk 81 is controlled by a voice coil motor 86 . In Fig. 8, a portion of the cover 88 is shown.

以下,将进一步详细说明用于解释本发明的本发明的实例。Hereinafter, examples of the present invention for explaining the present invention will be further described in detail.

(例子1)(Example 1)

将非磁性2.5英寸玻璃衬底放入ANELVA公司的c-3010型溅射装置的真空室中。Put the non-magnetic 2.5-inch glass substrate into the vacuum chamber of the c-3010 type sputtering device of ANELVA company.

将溅射装置的真空室抽真空到1×10-6Pa或更低。然后使用红外加热器将衬底加热到约300℃。将衬底的温度保持在约300℃,淀积200nm厚的CoZrNb膜作为软磁性垫层,并然后淀积约30nm厚的Cu膜。然后将衬底的温度升高到约500℃,并用200eV的离子枪将氮离子以0.1Pa的氮气气氛辐射到Cu膜表面上。在氮离子辐射后,淀积成5nm厚的Fe50Pt50膜。The vacuum chamber of the sputtering apparatus was evacuated to 1×10 -6 Pa or lower. The substrate was then heated to about 300°C using an infrared heater. The temperature of the substrate was kept at about 300°C, a CoZrNb film was deposited to a thickness of 200 nm as a soft magnetic underlayer, and then a Cu film was deposited to a thickness of about 30 nm. Then the temperature of the substrate was raised to about 500° C., and nitrogen ions were irradiated onto the surface of the Cu film in a nitrogen atmosphere of 0.1 Pa using an ion gun of 200 eV. After nitrogen ion irradiation, a 5 nm thick Fe 50 Pt 50 film was deposited.

然后淀积5nm厚的碳膜。要淀积CoZrNb膜、Cu膜、Fe50Pt50膜和C膜,氩气气压分别为0.7帕、0.7帕、5帕和0.7帕,靶材分别为CoZrNb、Cu、Fe50Pt50和C。使用直流溅射进行溅射。A carbon film was then deposited to a thickness of 5 nm. To deposit CoZrNb film, Cu film, Fe 50 Pt 50 film and C film, the argon gas pressure is 0.7 Pa, 0.7 Pa, 5 Pa and 0.7 Pa respectively, and the targets are CoZrNb, Cu, Fe 50 Pt 50 and C respectively. Sputtering was performed using DC sputtering.

对于CoZrNb、Fe50Pt50和C淀积,将向靶材输入的功率固定为1000W,而对于Cu淀积,该功率在100~1000W的范围内变化。For CoZrNb, Fe 50 Pt 50 and C deposition, the power input to the target was fixed at 1000W, while for Cu deposition, the power was varied in the range of 100-1000W.

使用与上述程序基本相同的方法制造具有Co50Pt50、Fe50Pd50、Co70Cr10Pt10而非Fe50Pt50的磁记录媒体。通过选择离子辐射时间,控制淀积到Cu膜表面上的氮淀积的量。通过改变对靶材输入的功率,改变Cu膜的晶粒直径。Magnetic recording media with Co 50 Pt 50 , Fe 50 Pd 50 , Co 70 Cr 10 Pt 10 instead of Fe 50 Pt 50 were fabricated using essentially the same procedure as described above. By selecting the ion irradiation time, the amount of nitrogen deposition deposited on the surface of the Cu film is controlled. By changing the power input to the target, the crystal grain diameter of the Cu film is changed.

在完成淀积后,通过浸涂法用约1.3nm厚的全氟聚醚(PFPE)润滑剂涂敷各保护层。然后,得到各磁记录媒体样本。After the deposition was completed, each protective layer was coated with a perfluoropolyether (PFPE) lubricant about 1.3 nm thick by dip coating. Then, each magnetic recording medium sample was obtained.

作为比较例,通过以下步骤制备常规的垂直磁记录媒体。将非磁性2.5英寸玻璃衬底放入溅射装置的真空室中,并将真空室抽真空到1×10-6Pa或更低。使用红外加热器将衬底加热到约300℃后,在各衬底上淀积作为软磁性垫层的200nm厚的CoZrNb膜、作为种层(seed-layer)的10nm厚的Ta膜、作为垫层的20nm厚的Ru膜、作为磁记录层的15nm厚的Co65-Cr20-Pt14-Ta1层和5nm厚的保护层,并使用与上述实施例相同的步骤涂敷润滑剂。要淀积CoZrNb膜、Ta膜、Ru膜和CoCrPtTa膜,氩气气压分别为0.7帕、0.7帕、0.7帕、5帕和0.7帕,靶材分别为CoZrNb、Ta、Ru、Co65Cr20Pt14Ta1层。使用直流溅射进行溅射。将对靶材输入的功率固定为1000W。As a comparative example, a conventional perpendicular magnetic recording medium was prepared through the following steps. A non-magnetic 2.5-inch glass substrate was placed in a vacuum chamber of a sputtering apparatus, and the vacuum chamber was evacuated to 1×10 -6 Pa or lower. After heating the substrates to about 300°C with an infrared heater, a 200-nm-thick CoZrNb film as a soft magnetic pad layer, a 10-nm-thick Ta film as a seed-layer, and a 10-nm-thick Ta film as a pad layer were deposited on each substrate. A 20nm thick Ru film, a 15nm thick Co 65 -Cr 20 -Pt 14 -Ta 1 layer as a magnetic recording layer, and a 5 nm thick protective layer, and the lubricant was applied using the same procedure as in the above example. To deposit CoZrNb film, Ta film, Ru film and CoCrPtTa film, the argon gas pressure is 0.7 Pa, 0.7 Pa, 0.7 Pa, 5 Pa and 0.7 Pa respectively, and the targets are CoZrNb, Ta, Ru, Co 65 Cr 20 Pt 14 Ta 1 floor. Sputtering was performed using DC sputtering. The power input to the target was fixed at 1000W.

通过加速电压为400kV的透射电子显微镜(TEM)确认各个制造样本的微观结构、晶粒直径和晶粒尺寸分布。采用与在表面科学(Surface Science)第490卷第336-350页中报道的方法类似的使用H+的NRA以及使用Cs+的SIMS法,得到并确认在各Cu膜上淀积的氮原子的数量。The microstructure, grain diameter, and grain size distribution of each fabricated sample were confirmed by a transmission electron microscope (TEM) at an accelerating voltage of 400 kV. Using NRA using H + and SIMS using Cs + similar to the method reported in Surface Science (Surface Science) Vol. quantity.

使用旋转台评价各磁记录媒体的记录和再现特性(读写特性、R/W特性)。所应用的磁头是0.3μm磁道宽单极磁头和0.2μm磁道宽MR磁头的组合。The recording and reproducing characteristics (reading and writing characteristics, R/W characteristics) of each magnetic recording medium were evaluated using a turntable. The applied magnetic head is a combination of a 0.3 μm track width unipolar head and a 0.2 μm track width MR head.

测量条件相同,即,磁头到中心的位置恒定为20mm,转速为4200rpm。The measurement conditions were the same, that is, the head-to-center position was constant at 20 mm, and the rotation speed was 4200 rpm.

测量作为微分电路的输出的微分波形的信噪比(SNRm),将其作为各磁记录媒体的SNR。所测量的信号S是119kfci的线性记录密度的输出,并且所测量的噪声是716kfci的均方根值。另外,估算微分波形的半宽度(dPW50),以得到用作记录的分辨率的指数。The signal-to-noise ratio (SNR m ) of the differential waveform as the output of the differential circuit was measured, and this was taken as the SNR of each magnetic recording medium. The measured signal S is an output of a linear recording density of 119 kfci and the measured noise is a root mean square value of 716 kfci. In addition, the half-width ( dPW50 ) of the differential waveform was estimated to obtain an index used as the resolution of the recording.

表1示出各磁记录媒体的磁性层的平均晶粒直径dMag和标准偏差σ。Table 1 shows the average crystal grain diameter d Mag and the standard deviation σ of the magnetic layer of each magnetic recording medium.

表1     磁记录层     平均直径dMag(nm)     标准偏差σ(nm)   例子1-1     FePt     4.5     1.0   例子1-2     CoCrPt     4.3     1.0   例子1-3     CoPt     4.8     1.1   例子1-4     FePd     4.8     1.3   比较例1     (常规媒体)     7.1     2.5 Table 1 magnetic recording layer Average diameter d Mag (nm) Standard deviation σ(nm) Example 1-1 FePt 4.5 1.0 Example 1-2 CoCrPt 4.3 1.0 Example 1-3 CoPt 4.8 1.1 Example 1-4 FePd 4.8 1.3 Comparative example 1 (regular media) 7.1 2.5

比较表1中例子1的各磁记录媒体和比较例1的磁记录媒体的磁性层的平均晶粒直径dMag和标准偏差σ,可以看出例子1的各磁记录媒体表现出具有较小平均偏差的较小平均晶粒直径。Comparing the average grain diameter dMag and the standard deviation σ of the magnetic layers of each magnetic recording medium of Example 1 and the magnetic recording medium of Comparative Example 1 in Table 1, it can be seen that each magnetic recording medium of Example 1 exhibits a smaller average The smaller average grain diameter of the deviation.

图9表示对于由核反应分析NRA得到的Fe50Pt50磁性层,淀积氮数量θ和平均磁性晶粒直径dMag之间的关系。从该图可以看出,当θ值为1×1013~1×1015原子/cm2时,晶粒十分小并是所期望的。对于Co50Pt50、Fe50Pd50和Co70Cr10Pt20磁性层的情形,得到相似的结果。对于各个磁记录媒体,通过沿深度方向使用SIMS进行化学元素分布测量,检测在包含Cu晶粒的晶粒直径控制垫层上淀积的氮原子。Fig. 9 shows the relationship between the amount of deposited nitrogen θ and the average magnetic grain diameter d Mag for the Fe 50 Pt 50 magnetic layer obtained by nuclear reaction analysis NRA. From this figure, it can be seen that when the value of θ is 1×10 13 to 1×10 15 atoms/cm 2 , crystal grains are quite small and expected. Similar results were obtained for the case of Co 50 Pt 50 , Fe 50 Pd 50 and Co 70 Cr 10 Pt 20 magnetic layers. For each magnetic recording medium, nitrogen atoms deposited on the grain diameter control underlayer including Cu crystal grains were detected by performing chemical element distribution measurement using SIMS in the depth direction.

图10表示对于具有2×1014原子/cm2淀积氮的Fe50Pd50磁性层,Cu层上的Cu晶粒的平均直径和磁性晶粒的平均直径之间的关系。从图10可以看出,当Cu层的平均晶粒直径为50nm或更大时,磁性层的平均直径变得十分小。Fig. 10 shows the relationship between the average diameter of Cu crystal grains on the Cu layer and the average diameter of magnetic crystal grains for a Fe 50 Pd 50 magnetic layer having 2 x 10 14 atoms/cm 2 deposited nitrogen. As can be seen from FIG. 10, when the average crystal grain diameter of the Cu layer is 50 nm or more, the average diameter of the magnetic layer becomes sufficiently small.

图11表示对于Cu的平均直径dCu为100nm的情况,各磁记录媒体的SNRm和由TEM观测得到的单位面积磁性晶粒的数量(晶粒的面密度)n之间的关系。如图11所示,当n值为1×1012~8×1012晶粒/cm2时,SNRm增大且是所期望的。当n值为1×1012~8×1012晶粒/cm2时,平均每个Cu晶粒上有磁记录媒体的多个磁性晶粒。11 shows the relationship between the SNR m of each magnetic recording medium and the number of magnetic crystal grains per unit area (area density of crystal grains) n observed by TEM for the case where the average diameter d of Cu is 100 nm. As shown in FIG. 11 , when the value of n is 1×10 12 to 8×10 12 grains/cm 2 , the SNR m increases and is expected. When the value of n is 1×10 12 to 8×10 12 grains/cm 2 , on average each Cu crystal grain has a plurality of magnetic crystal grains of the magnetic recording medium.

使用图像处理和分析软件“Image-Pro Plus”(美国MediaCybernetics公司)对各面内TEM图像研究磁性晶粒的有序排列情况。对于各个TEM图像进行修正,以通过增加磁性晶粒的区域和其它区域之间的对比度得到由二元变量表达的图案。然后用FFT变换由二元图像表达的图像。结果,对于常规媒体没有观察到磁性层中的磁性晶粒的有序排列。另一方面,对于n值为1×1012~8×1012晶粒/cm2的各磁记录媒体,观察到四方晶格结构的磁性晶粒的有序排列。Use the image processing and analysis software "Image-Pro Plus" (MediaCybernetics, USA) to study the ordered arrangement of magnetic crystal grains on the TEM images in each plane. Corrections were made to each TEM image to obtain patterns expressed by binary variables by increasing the contrast between regions of magnetic grains and other regions. The image represented by the binary image is then transformed with FFT. As a result, ordered arrangement of magnetic crystal grains in the magnetic layer was not observed for conventional media. On the other hand, for each magnetic recording medium having an n value of 1×10 12 to 8×10 12 grains/cm 2 , orderly arrangement of magnetic crystal grains of a tetragonal lattice structure was observed.

(例子2)(Example 2)

将非磁性2.5英寸玻璃衬底放入真空室中,并将真空室抽真空到1×10-6Pa或更低。然后使用例子1中所述的方法实施CoZrNb软磁性垫层、Cu淀积和氮淀积工艺。然后使用(Fe50-Pt50)-10mol%SiO2复合靶材形成5nm厚的(Fe50-Pt50)-SiO2磁性层。并且,使用各种靶材制造代替例子1中磁盘的Fe50Pt50层、分别具有Co50Pt50、Fe50Pd50和Co70Cr10Pt20的磁盘。类似地,代替例子1中的SiO2层、制造分别具有TiO、Al2O3、TiC和TaC的磁盘。然后对于每种制造的磁记录媒体淀积碳保护层并涂敷润滑层。A non-magnetic 2.5-inch glass substrate was placed in a vacuum chamber, and the vacuum chamber was evacuated to 1×10 -6 Pa or lower. The CoZrNb soft magnetic underlayer, Cu deposition and nitrogen deposition processes were then performed using the method described in Example 1. Then a 5 nm thick (Fe 50 -Pt 50 )-SiO 2 magnetic layer was formed using a (Fe 50 -Pt 50 )-10 mol% SiO 2 composite target. Also, magnetic disks having Co 50 Pt 50 , Fe 50 Pd 50 , and Co 70 Cr 10 Pt 20 instead of the Fe 50 Pt 50 layer of the magnetic disk in Example 1 were manufactured using various targets. Similarly, instead of the SiO 2 layer in Example 1, magnetic disks were fabricated with TiO, Al 2 O 3 , TiC, and TaC, respectively. A carbon protective layer was then deposited and a lubricating layer was applied for each magnetic recording medium manufactured.

表2示出各磁记录媒体的SNRm值和dPW50值。具有含有化合物的磁记录层的磁记录媒体表现出增大的SNRm并是所期望的。对于每种含有化合物的膜复合物,通过TEM观察到磁性层的磁性晶粒为粒状结构并大致呈四方排列。Table 2 shows the SNRm value and dPW 50 value of each magnetic recording medium. A magnetic recording medium having a magnetic recording layer containing the compound exhibits increased SNRm and is desirable. For each compound-containing film composite, the magnetic grains of the magnetic layer were observed by TEM to be granular in structure and roughly arranged in a tetragonal arrangement.

表2     磁记录层     信噪比SNRm(dB)    半宽度dPW50nm)     例子2-1     FePt     17.1    98     例子2-2     CoCrPt     17.3    93     例子2-3     CoPt     17.0    99     例子2-4     FePd     16.8    97     例子2-5     FePt-SiO2     18.3    90     例子2-6     CoCrPt-SiO2     18.6    89     例子2-7     CoPt-SiO2     18.0    90     例子2-8     FePd-SiO2     18.0    89     例子2-9     FePt-MgO     18.2    91     例子2-10     CoCrPt-MgO     18.2    90     例子2-11     CoPt-MgO     18.0    87     例子2-12     FePd-MgO     17.8    86     例子2-13     FePt-Al2O3     17.9    89     例子2-14     CoCrPt-Al2O3     17.9    86     例子2-15     CoPt-Al2O3     17.7    87     例子2-16     FePd-Al2O3     17.7    89     例子2-17     FePt-TiO     18.1    87     例子2-18     CoCrPt-TiO     18.2    90     例子2-19     CoPt-TiO     17.9    87     例子2-20     FePd-TiO     17.9    88     例子2-21     FePt-TiC     17.8    90     例子2-22     CoCrPt-TiC     17.8    92     例子2-23     CoPt-TiC     17.7    90     例子2-24     FePd-TiC     17.8    88     例子2-25     FePt-TaC     17.9    87     例子2-26     CoCrPt-TaC     17.8    90     例子2-27     CoPt-TaC     17.8    87     例子2-28     FePd-TaC     17.8    88     比较例2     (常规媒体)     15.4    109 Table 2 magnetic recording layer Signal-to-noise ratioSNRm(dB) half width dPW 50 nm) Example 2-1 FePt 17.1 98 Example 2-2 CoCrPt 17.3 93 Example 2-3 CoPt 17.0 99 Example 2-4 FePd 16.8 97 Example 2-5 FePt-SiO 2 18.3 90 Example 2-6 CoCrPt-SiO 2 18.6 89 Example 2-7 CoPt- SiO2 18.0 90 Example 2-8 FePd-SiO 2 18.0 89 Example 2-9 FePt-MgO 18.2 91 Example 2-10 CoCrPt-MgO 18.2 90 Example 2-11 CoPt-MgO 18.0 87 Example 2-12 FePd-MgO 17.8 86 Example 2-13 FePt-Al 2 O 3 17.9 89 Example 2-14 CoCrPt-Al 2 O 3 17.9 86 Example 2-15 CoPt-Al 2 O 3 17.7 87 Example 2-16 FePd-Al 2 O 3 17.7 89 Example 2-17 FePt-TiO 18.1 87 Example 2-18 CoCrPt-TiO 18.2 90 Example 2-19 CoPt-TiO 17.9 87 Example 2-20 FePd-TiO 17.9 88 Example 2-21 FePt-TiC 17.8 90 Example 2-22 CoCrPt-TiC 17.8 92 Example 2-23 CoPt-TiC 17.7 90 Example 2-24 FePd-TiC 17.8 88 Example 2-25 FePt-TaC 17.9 87 Example 2-26 CoCrPt-TaC 17.8 90 Example 2-27 CoPt-TaC 17.8 87 Example 2-28 FePd-TaC 17.8 88 Comparative example 2 (regular media) 15.4 109

(例子3)(Example 3)

使用例子1的工艺制备2.5英寸硬盘状非磁性玻璃衬底并进行膜淀积,直到完成氮淀积处理。然后,使用Pt-10mol%SiO2复合靶材淀积10nm厚的Pt-SiO2层。在Pt-SiO2层上淀积各种磁记录层,并在使用例子2中所述的程序淀积碳保护层并涂敷润滑层后得到各种磁记录媒体。另外,分别使用各种复合靶材得到代替Pt垫层、分别具有Pd、Ir、Ag、Cu、Ru和Rh垫层的磁记录媒体、代替SiO2垫层、分别具有TiO、Al2O3、MgO、TiC和TaC垫层的磁记录媒体。Using the process of Example 1, a 2.5-inch hard disk-like non-magnetic glass substrate was prepared and film deposition was performed until the nitrogen deposition process was completed. Then, a 10-nm-thick Pt- SiO2 layer was deposited using the Pt-10mol% SiO2 composite target. Various magnetic recording layers were deposited on the Pt- SiO2 layer, and various magnetic recording media were obtained after depositing a carbon protective layer and coating a lubricating layer using the procedure described in Example 2. In addition, various composite targets were used to obtain magnetic recording media with Pd, Ir, Ag, Cu, Ru and Rh cushion layers instead of Pt cushion layers, TiO, Al 2 O 3 , Magnetic recording media with MgO, TiC and TaC underlayers.

表3示出具有CoCrPt-SiO2磁记录层和各种垫层的各种磁记录媒体的SNRm和dPW50Table 3 shows the SNR m and dPW 50 of various magnetic recording media having a CoCrPt-SiO 2 magnetic recording layer and various underlayers.

表3     垫层     信噪比SNRm(dB)    半宽度dPW50(nm)     例子3-1     Pt-SiO2     19.6    80     例子3-2     Pd-SiO2     19.6    81     例子3-3     Ir-SiO2     19.3    79     例子3-4     Ag-SiO2     19.0    78     例子3-5     Cu-SiO2     18.9    79     例子3-6     Ru-SiO2     19.8    77     例子3-7     Rh-SiO2     19.7    77     例子3-8     Pt-MgO     19.4    81     例子3-9     Pd-MgO     19.4    80     例子3-10     Ir-MgO     19.0    77     例子3-11     Ag-MgO     19.0    81     例子3-12     Cu-MgO     19.3    81     例子3-13     Ru-MgO     19.5    79     例子3-14     Rh-MgO     19.5    77     例子3-15     Pt-Al2O3     19.4    77     例子3-16     Pd-Al2O3     19.6    82     例子3-17     Ir-Al2O3     19.2    80     例子3-18     Ag-Al2O3     19.4    79     例子3-19     Cu-Al2O3     19.5    82     例子3-20     Ru-Al2O3     19.7    75     例子3-21     Rh-Al2O3     19.4    78     例子3-22     Pt-TiO     19.6    73     例子3-23     Pd-TiO     19.9    80     例子3-24     Ir-TiO     19.3    78     例子3-25     Ag-TiO     19.5    74     例子3-26     Cu-TiO     19.0    79     例子3-27     Ru-TiO     20.0    76     例子3-28     Rh-TiO     19.8    78     例子3-29     Pt-TiC     19.3    79     例子3-30     Pd-TiC     19.3    75     例子3-31     Ir-TiC     19.5    77     例子3-32     Ag-TiC     19.0    78     例子3-33     Cu-TiC     18.9    74     例子3-34     Ru-TiC     18.9    74     例子3-35     Rh-TiC     18.9    80     例子3-36     Pt-TaC     19.0    79     例子3-37     Pd-TaC     19.0    77     例子3-38     Ir-TaC     19.3    73     例子3-39     Ag-TaC     19.2    74     例子3-40     Cu-TaC     19.2    78     例子3-41     Ru-TaC     19.1    75     例子3-42     Rh-TaC     19.1    79 table 3 Cushion Signal-to-noise ratioSNRm(dB) half width dPW 50 (nm) Example 3-1 Pt-SiO 2 19.6 80 Example 3-2 Pd-SiO 2 19.6 81 Example 3-3 Ir-SiO 2 19.3 79 Example 3-4 Ag-SiO 2 19.0 78 Example 3-5 Cu-SiO 2 18.9 79 Example 3-6 Ru-SiO 2 19.8 77 Example 3-7 Rh-SiO 2 19.7 77 Example 3-8 Pt-MgO 19.4 81 Example 3-9 Pd-MgO 19.4 80 Example 3-10 Ir-MgO 19.0 77 Example 3-11 Ag-MgO 19.0 81 Example 3-12 Cu-MgO 19.3 81 Example 3-13 Ru-MgO 19.5 79 Example 3-14 Rh-MgO 19.5 77 Example 3-15 Pt-Al 2 O 3 19.4 77 Example 3-16 Pd-Al 2 O 3 19.6 82 Example 3-17 Ir-Al 2 O 3 19.2 80 Example 3-18 Ag-Al 2 O 3 19.4 79 Example 3-19 Cu-Al 2 O 3 19.5 82 Example 3-20 Ru-Al 2 O 3 19.7 75 Example 3-21 Rh-Al 2 O 3 19.4 78 Example 3-22 Pt-TiO 19.6 73 Example 3-23 Pd-TiO 19.9 80 Example 3-24 Ir-TiO 19.3 78 Example 3-25 Ag-TiO 19.5 74 Example 3-26 Cu-TiO 19.0 79 Example 3-27 Ru-TiO 20.0 76 Example 3-28 Rh-TiO 19.8 78 Example 3-29 Pt-TiC 19.3 79 Example 3-30 Pd-TiC 19.3 75 Example 3-31 Ir-TiC 19.5 77 Example 3-32 Ag-TiC 19.0 78 Example 3-33 Cu-TiC 18.9 74 Example 3-34 Ru-TiC 18.9 74 Example 3-35 Rh-TiC 18.9 80 Example 3-36 Pt-TaC 19.0 79 Example 3-37 Pd-TaC 19.0 77 Example 3-38 Ir-TaC 19.3 73 Example 3-39 Ag-TaC 19.2 74 Example 3-40 Cu-TaC 19.2 78 Example 3-41 Ru-TaC 19.1 75 Example 3-42 Rh-TaC 19.1 79

可以看出,在CoCrPt-SiO2磁记录层下设置含有化合物的垫层复合物的磁记录媒体的SNRm增加。对于具有其它磁记录层的磁记录媒体可以看到类似的结果。各磁记录层和垫层为粒状结构,且磁性晶粒大致呈四方排列。It can be seen that the SNR m of the magnetic recording media with the underlayer composite containing the compound under the CoCrPt- SiO2 magnetic recording layer increases. Similar results were seen for magnetic recording media having other magnetic recording layers. Each magnetic recording layer and the pad layer have a granular structure, and the magnetic crystal grains are roughly arranged in a square.

(例子4)(Example 4)

制备2.5英寸硬盘状非磁性玻璃衬底,并且,除了在软磁性垫层和晶粒直径控制层之间设置一层取向控制层外,其它程序与例子3相同。然后得到各种磁记录媒体。作为取向控制层,通过制备并使用NiAl靶材在0.7Pa的Ar气氛中淀积5nm厚的NiAl层。另外,制造分别具有MgO、NiO、MnAl、Ge、Si和TiN的取向控制层的磁记录媒体。A 2.5-inch hard disk-shaped non-magnetic glass substrate was prepared, and the procedure was the same as in Example 3 except that an orientation control layer was provided between the soft magnetic underlayer and the grain diameter control layer. Then various magnetic recording media were obtained. As the orientation control layer, a 5 nm thick NiAl layer was deposited in an Ar atmosphere of 0.7 Pa by preparing and using a NiAl target. In addition, magnetic recording media having orientation control layers of MgO, NiO, MnAl, Ge, Si, and TiN, respectively, were produced.

表4示出具有CoCrPt-SiO2磁记录层和Pt-SiO2垫层的各磁记录媒体的记录和再现特性。Table 4 shows recording and reproducing characteristics of each magnetic recording medium having a CoCrPt-SiO 2 magnetic recording layer and a Pt-SiO 2 underlayer.

表4     取向控制垫层     信噪比SNRm(dB)     半宽度DPW50(nm)     例子4-1     无     19.8     77     例子4-2     NiAl     20.5     76     例子4-3     MgO     20.3     75     例子4-4     NiO     20.0     76     例子4-5     MnAl     20.3     77     例子4-6     Si     20.0     73     例子4-7     Ge     20.1     76     例子4-8     TiN     20.4     76 Table 4 Orientation Control Cushion Signal-to-noise ratioSNRm(dB) Half width DPW 50 (nm) Example 4-1 none 19.8 77 Example 4-2 NiAl 20.5 76 Example 4-3 MgO 20.3 75 Example 4-4 NiO 20.0 76 Example 4-5 MnAl 20.3 77 Example 4-6 Si 20.0 73 Example 4-7 Ge 20.1 76 Example 4-8 TiN 20.4 76

如表4所示,通过设置取向控制层,SNRm进一步增加。对于具有垫层和磁记录层的其它组合的磁记录媒体,可以看到类似的结果。As shown in Table 4, SNR m is further increased by providing an orientation control layer. Similar results were seen for magnetic recording media with other combinations of underlayer and magnetic recording layer.

虽然通过其优选的实施例说明了本发明,但本领域技术人员应当理解,在不背离本发明的精神和范围的条件下,可以对其做各种修改。While the present invention has been described by way of its preferred embodiments, those skilled in the art will understand that various modifications can be made therein without departing from the spirit and scope of the invention.

Claims (21)

1. magnetic recording medium comprises:
Substrate;
The bed course that on above-mentioned substrate, forms;
Magnetic recording layer on the above-mentioned bed course; With
The protective seam that on above-mentioned magnetic recording layer, forms,
It is characterized in that the above-mentioned bed course that comprises the crystal grain diameter key-course comprises Cu crystal grain and the illuvium of the nitrogen-atoms that forms on above-mentioned crystal grain diameter control mat surface.
2. according to the magnetic recording medium of claim 1,
It is characterized in that it is 1 * 10 that the illuvium of above-mentioned nitrogen-atoms comprises centre plane density 13~1 * 10 15Atom/cm 2Nitrogen-atoms.
3. according to the magnetic recording medium of claim 1,
It is characterized in that it is 50nm or bigger Cu crystal grain that above-mentioned crystal grain diameter control bed course comprises mean diameter.
4. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned crystal grain diameter control bed course comprises the orientation Cu crystal grain parallel with above-mentioned substrate surface of each (100) face.
5. according to the magnetic recording medium of claim 1,
It is characterized in that it is 1 * 10 that above-mentioned magnetic recording layer comprises centre plane density 12~8 * 10 12Crystal grain/cm 2Magnetic crystal grain, and a Cu crystal grain of above-mentioned diameter control bed course on average keeps a plurality of magnetic crystal grains.
6. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned magnetic recording layer comprises the magnetic crystal grain of arranging with the form of tetragonal lattice structure.
7. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned magnetic recording layer comprises the magnetic crystal grain of granular structure and surrounds the grain battery limit (BL) of each magnetic crystal grain.
8. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned magnetic recording layer comprises the magnetic crystal grain that is selected from the alloy among Co-Cr, Co-Pt, Fe-Pt and the Fe-Pd basically and by at least a grain battery limit (BL) that constitutes that is selected from basically in oxide and the carbonide.
9. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned magnetic recording medium is included at least one the middle bed course that is provided with between the illuvium of above-mentioned magnetic recording layer and above-mentioned nitrogen-atoms.
10. according to the magnetic recording medium of claim 9,
It is characterized in that above-mentioned middle bed course comprises at least one granular structure layer that comprises non magnetic crystal grain and surround the grain battery limit (BL) of each non magnetic crystal grain.
11. according to the magnetic recording medium of claim 10,
It is characterized in that bed course comprises the non magnetic crystal grain of at least a metal that is selected from basically among Pt, Pd, Ir, Ag, Cu, Ru and the Rh and comprises at least a grain battery limit (BL) that is selected from oxide and the nitride in the middle of the above-mentioned granular structure.
12. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned magnetic recording medium is included in the soft magnetism bed course with soft magnetism characteristic that is provided with between above-mentioned crystal grain diameter control bed course and the above-mentioned substrate.
13. according to the magnetic recording medium of claim 1,
It is characterized in that, above-mentioned magnetic recording medium comprise between above-mentioned crystal grain diameter control bed course and above-mentioned soft magnetism bed course, have a grain orientation control bed course that is selected from least a basic chemical constitution among NiAl, MnAl, MgO, NiO, TiN, Si and the Ge basically.
14. a magnetic recording medium manufacture method may further comprise the steps:
On substrate, form the crystal grain diameter key-course that comprises Cu crystal grain;
On above-mentioned crystal grain diameter control mat surface, form the illuvium of the nitrogen-atoms of deposit nitrogen; With
On the substrate of crystal grain diameter control bed course, form magnetic recording layer with above-mentioned deposit nitrogen layer.
15. according to the magnetic recording medium manufacture method of claim 14,
It is characterized in that in the step of the illuvium of above-mentioned formation nitrogen-atoms, deposit centre plane density is 1 * 10 on above-mentioned crystal grain diameter control mat surface 13~1 * 10 15Atom/cm 2Nitrogen-atoms.
16. according to the magnetic recording medium manufacture method of claim 14,
It is characterized in that, in the step of above-mentioned formation crystal grain diameter control bed course, form the above-mentioned crystal grain diameter control bed course that comprises 50nm or bigger Cu crystal grain, and, in the step of the illuvium of above-mentioned formation nitrogen-atoms, the above-mentioned nitrogen-atoms of deposit on above-mentioned crystal grain diameter control mat surface.
17. according to the magnetic recording medium manufacture method of claim 14,
It is characterized in that in the step of above-mentioned formation crystal grain diameter key-course, the orientation above-mentioned crystal grain diameter parallel with above-mentioned substrate surface that forms (100) face of crystal grain controlled the above-mentioned Cu crystal grain of bed course.
18. according to the magnetic recording medium manufacture method of claim 17,
It is characterized in that, in the step of above-mentioned formation magnetic recording layer, in above-mentioned magnetic recording aspect, arrange above-mentioned magnetic crystal grain with the form of tetragonal lattice structure basically.
19. according to the magnetic recording medium manufacture method of claim 14,
It is characterized in that in the step of above-mentioned formation magnetic recording layer, forming centre plane density is 1 * 10 12~8 * 10 12Crystal grain/cm 2Above-mentioned magnetic recording layer in above-mentioned magnetic crystal grain.
20. magnetic recording and transcriber comprise:
The magnetic recording medium of the protective seam that comprises substrate, the magnetic recording layer on the bed course that forms on the above-mentioned substrate, above-mentioned bed course and on above-mentioned magnetic recording layer, form; wherein; described bed course comprises the illuvium of crystal grain diameter control bed course that contains Cu crystal grain and the nitrogen-atoms that forms on above-mentioned crystal grain diameter control bed course
Be used to drive the recording medium driving mechanism of above-mentioned magnetic recording medium;
Be used to record information on the above-mentioned magnetic recording medium and the record and the reproducing head mechanism of information reproduction from the above-mentioned magnetic recording medium;
Be used to drive the magnetic head driving mechanism of above-mentioned record and reproducing head; With
Be used to handle the record and the reproducing signal disposal system of tracer signal and reproducing signal.
21. according to the magnetic recording and the transcriber of claim 20,
It is characterized in that above-mentioned record and reproducing head mechanism comprise single-pole-piece magnetic head.
CNB2005100592999A 2004-03-25 2005-03-25 Magnetic recording medium, method for manufacturing recording medium and magnetic recording apparatus Expired - Fee Related CN1333387C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004090669 2004-03-25
JP2004090669A JP4874526B2 (en) 2004-03-25 2004-03-25 Magnetic recording medium, method of manufacturing magnetic recording medium, and magnetic recording / reproducing apparatus

Publications (2)

Publication Number Publication Date
CN1674102A true CN1674102A (en) 2005-09-28
CN1333387C CN1333387C (en) 2007-08-22

Family

ID=34990296

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100592999A Expired - Fee Related CN1333387C (en) 2004-03-25 2005-03-25 Magnetic recording medium, method for manufacturing recording medium and magnetic recording apparatus

Country Status (4)

Country Link
US (2) US7416794B2 (en)
JP (1) JP4874526B2 (en)
CN (1) CN1333387C (en)
SG (1) SG115788A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104364846A (en) * 2012-12-06 2015-02-18 富士电机株式会社 perpendicular magnetic recording media

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4585214B2 (en) 2004-03-25 2010-11-24 株式会社東芝 Magnetic recording medium and magnetic recording / reproducing apparatus using the same
JP2005276364A (en) * 2004-03-25 2005-10-06 Toshiba Corp Magnetic recording medium, manufacturing method thereof, and magnetic recording / reproducing apparatus using the same
US20070099032A1 (en) * 2005-11-02 2007-05-03 Heraeus, Inc., A Corporation Of The State Of Arizona Deposition of enhanced seed layer using tantalum alloy based sputter target
JP4557880B2 (en) * 2005-12-20 2010-10-06 株式会社東芝 Magnetic recording medium and magnetic recording / reproducing apparatus
WO2007080781A1 (en) 2006-01-13 2007-07-19 Nippon Mining & Metals Co., Ltd. Nonmagnetic material particle dispersed ferromagnetic material sputtering target
US20070190364A1 (en) * 2006-02-14 2007-08-16 Heraeus, Inc. Ruthenium alloy magnetic media and sputter targets
JP2008027505A (en) * 2006-07-20 2008-02-07 Fuji Electric Device Technology Co Ltd Perpendicular magnetic recording medium and manufacturing method thereof
WO2008038664A1 (en) * 2006-09-29 2008-04-03 Hoya Corporation Magnetic recording medium
JP2008146693A (en) * 2006-12-06 2008-06-26 Fuji Electric Device Technology Co Ltd Method for manufacturing perpendicular magnetic recording medium
JP5058642B2 (en) * 2007-03-26 2012-10-24 財団法人神奈川科学技術アカデミー Manufacturing method of semiconductor substrate
US8648589B2 (en) * 2009-10-16 2014-02-11 HGST Netherlands B.V. Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co2(MnFe)X alloys
PL2496228T3 (en) 2009-11-06 2014-06-30 Sk Biopharmaceuticals Co Ltd Methods for treating attention-deficit/hyperactivity disorder
US9412404B2 (en) 2009-12-15 2016-08-09 HGST Netherlands B.V. Onset layer for perpendicular magnetic recording media
JP5127957B2 (en) 2010-11-26 2013-01-23 株式会社東芝 Magnetic recording medium, manufacturing method thereof, and magnetic recording / reproducing apparatus
US9245549B2 (en) 2013-05-13 2016-01-26 HGST Netherlands B.V. Thermally stable low random telegraph noise sensor
EP3053968B1 (en) 2015-02-06 2017-05-17 Schaeffler Baltic, SIA A nanocomposite solid lubricant coating
CN110120232B (en) * 2018-02-07 2020-11-27 西南大学 A kind of FePt-MgO magnetic recording film and preparation method thereof

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4575475A (en) 1983-07-12 1986-03-11 Tdk Corporation Magnetic recording medium
US5439575A (en) * 1988-06-30 1995-08-08 Board Of Trustees Of The University Of Illinois Hybrid method for depositing semi-conductive materials
JPH02110842A (en) 1988-10-18 1990-04-24 Tdk Corp Magneto-optical recording medium and magneto-optical recording method
JP2937199B2 (en) 1989-03-06 1999-08-23 株式会社日立製作所 In-plane magnetic recording medium, method of manufacturing the same, and magnetic storage device
JPH03235218A (en) 1990-02-08 1991-10-21 Kobe Steel Ltd Production of magnetic recording medium
JPH06259764A (en) 1993-03-09 1994-09-16 Kao Corp Device for evaluating electromagnetic conversion characteristic of magnetic coating material for magnetic recording medium
US5603766A (en) * 1995-02-23 1997-02-18 Board Of Trustees Of The Stanford Leland Junior University Method for producing uniaxial tetragonal thin films of ternary intermetallic compounds
JPH1092637A (en) 1996-09-13 1998-04-10 Fujitsu Ltd Magnetic recording medium and device
US6007623A (en) * 1997-08-29 1999-12-28 International Business Machines Corporation Method for making horizontal magnetic recording media having grains of chemically-ordered FePt or CoPt
US6303218B1 (en) * 1998-03-20 2001-10-16 Kabushiki Kaisha Toshiba Multi-layered thin-film functional device and magnetoresistance effect element
JP2002541671A (en) * 1999-03-30 2002-12-03 ドイッチェ テレコム アーゲー Control cabinet
JP2000306231A (en) * 1999-04-20 2000-11-02 Sony Corp Magnetic recording media
JP3476740B2 (en) 1999-06-08 2003-12-10 富士通株式会社 Magnetic recording media
JP2002025031A (en) * 2000-07-11 2002-01-25 Fuji Electric Co Ltd Perpendicular magnetic recording media
JP2003036525A (en) * 2001-07-25 2003-02-07 Fuji Electric Co Ltd Perpendicular magnetic recording medium and method of manufacturing the same
JP3889635B2 (en) * 2002-02-06 2007-03-07 富士通株式会社 Perpendicular magnetic recording medium
JP2003338029A (en) 2002-05-22 2003-11-28 Showa Denko Kk Magnetic recording medium, method for manufacturing the same and magnetic recording and reproducing device
JP2005190517A (en) * 2003-12-24 2005-07-14 Hitachi Global Storage Technologies Netherlands Bv Perpendicular magnetic recording medium and magnetic storage device
JP2005276364A (en) * 2004-03-25 2005-10-06 Toshiba Corp Magnetic recording medium, manufacturing method thereof, and magnetic recording / reproducing apparatus using the same
JP4585214B2 (en) * 2004-03-25 2010-11-24 株式会社東芝 Magnetic recording medium and magnetic recording / reproducing apparatus using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104364846A (en) * 2012-12-06 2015-02-18 富士电机株式会社 perpendicular magnetic recording media
CN104364846B (en) * 2012-12-06 2019-11-05 富士电机株式会社 perpendicular magnetic recording media

Also Published As

Publication number Publication date
US7416794B2 (en) 2008-08-26
SG115788A1 (en) 2005-10-28
JP2005276363A (en) 2005-10-06
CN1333387C (en) 2007-08-22
JP4874526B2 (en) 2012-02-15
US20050214591A1 (en) 2005-09-29
US20080090002A1 (en) 2008-04-17

Similar Documents

Publication Publication Date Title
US20080090002A1 (en) Magnetic recording medium, method for manufacturing recording medium and magnetic recording apparatus
JP4444182B2 (en) Perpendicular magnetic recording medium tilted in the direction of easy magnetization, its manufacturing method, and magnetic recording / reproducing apparatus including the same
US20130040167A1 (en) Perpendicular magnetic recording medium and its manufacturing method
CN100347756C (en) Magnetic recording medium and magnetic recording apparatus
CN101465130A (en) Perpendicular magnetic recording medium and magnetic recording/reproduction apparatus using the same
CN1329887C (en) Magnetic recording medium, method for manufacturing recording medium and magnetic recording apparatus
JP5127957B2 (en) Magnetic recording medium, manufacturing method thereof, and magnetic recording / reproducing apparatus
CN101040326A (en) Perpendicular magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus
CN1815567A (en) Perpendicular magnetic recording medium and magnetic recording device
CN1898726A (en) Magnetic recording medium, manufacturing method for the magnetic recording medium, and magnetic read/write apparatus
JP4951075B2 (en) Magnetic recording medium, manufacturing method thereof, and magnetic recording / reproducing apparatus using the same
JP3725132B2 (en) Perpendicular magnetic recording medium and magnetic recording / reproducing apparatus using the same
CN108305645B (en) Magnetic recording media and magnetic memory apparatus
CN100527229C (en) Magnetic recording medium and magnetic recording/reproducing apparatus
JP4478834B2 (en) Perpendicular magnetic recording medium and magnetic recording / reproducing apparatus using the same
CN1585973A (en) Magnetic recording medium, its manufacturing method, and magnetic storage
JP4892073B2 (en) Magnetic recording medium, manufacturing method thereof, and magnetic recording / reproducing apparatus
CN1773609A (en) Magnetic recording medium and magnetic storage apparatus
JP2014056622A (en) Perpendicular magnetic recording medium
JP4746701B2 (en) Magnetic recording medium, method of manufacturing magnetic recording medium, and magnetic recording / reproducing apparatus
JP4535666B2 (en) Perpendicular magnetic recording medium
CN1655242A (en) Co-based perpendicular magnetic recording media
JP2006079805A (en) Magnetic recording medium and manufacturing method thereof, and magnetic recording and reproducing apparatus
JP2006155862A (en) Manufacturing method of magnetic recording medium, and magnetic recording and reproducing apparatus
JP2010153031A (en) Magnetic recording medium, and magnetic recording and playback device using the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070822

Termination date: 20100325